Transparent wire structure, OLED device and OLED cellular structure

By preparing an additional barrier area in the OLED device, the transparent wire structure extending above the planarization layer, the overetching problem caused by the accumulation of medicine liquid is solved, and the yield and preparation accuracy of the device are improved.

CN222192959UActive Publication Date: 2024-12-17EVERDISPLAY OPTRONICS (SHANGHAI) CO LTD
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Patent Information

Application Number
CN202420014882.6
Authority / Receiving Office
CN · China
Patent Type
Utility models(China)
Current Assignee / Owner
Filing Date
2024-01-02
Publication Date
2024-12-17
Estimated Expiration
2034-01-02

AI Technical Summary

Technical Problem

The junction position between transparent conductors and electrodes in existing OLED devices is overetched due to the accumulation of drug liquid, causing the risk of the transparent conductors under the anode metal layer to be broken, reducing the product yield.

Method used

An additional barrier area is prepared on the junction area of ​​the electrode metal layer, extending above the planarization layer, forming a rectangular or zigzag transparent wire structure, with the barrier area greater than or equal to 1.2um to avoid accumulation of drug liquid and overetching.

Benefits of technology

It effectively protects transparent conductors, reduces the risk of wire disconnection, and improves the yield and preparation accuracy of the device.

✦ Generated by Eureka AI based on patent content.

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Abstract

The utility model relates to the technical field of OLED devices, in particular to a transparent lead structure, an OLED device and an OLED cellular structure, and the transparent lead structure comprises a transparent lead layer which is located above a substrate; the electrode metal layer is positioned above the transparent lead layer and is connected to the OLED device; the electrode metal layer is provided with a blocking area at a preset position above the planarization layer, and the blocking area covers the transparent lead layer in the overlook direction. The method has the beneficial effects that the junction region of the electrode metal layer on the transparent lead structure is improved, and the barrier region partially extending to the upper part of the device is formed. Since the barrier region extends to the upper surface of the planarization layer, the recessed part of the corresponding photoresist is pushed to the upper part of the planarization layer during processing, and compared with the traditional recessed structure, the liquid medicine accumulation is not easily caused, the risk that the metal layer is over-etched is reduced, the effective protection of the transparent lead layer below is realized, and the production efficiency is improved. Line breakage is avoided, and the device yield is improved.
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Description

Technical Field

[0001] The utility model relates to the technical field of OLED devices, and in particular to a transparent wire structure, an OLED device and an OLED cell structure. Background Art

[0002] OLED (Organic Light-Emitting Diode), also known as organic electroluminescence display and organic light-emitting semiconductor (Organic Electroluminescence Display, OLED). OLED is a current-type organic light-emitting device, which is a phenomenon of luminescence caused by the injection and recombination of carriers, and the luminescence intensity is proportional to the injected current. Under the action of the electric field, the holes generated by the anode and the electrons generated by the cathode of the OLED will move, inject into the hole transport layer and the electron transport layer respectively, and migrate to the light-emitting layer. When the two meet in the light-emitting layer, energy excitons are generated, which excite the light-emitting molecules and finally produce visible light. Generally speaking, an OLED display panel is formed by combining a large number of OLED devices in a specific arrangement, and the devices and the driver IC are connected by corresponding leads. With the development of display technology, the high transmittance of the screen is achieved through ITO transparent conductors, so as to meet the needs of scenes such as under-screen photography. Technical solutions have also emerged.

[0003] Chinese patent CN202010824634.4 discloses a typical array substrate and OLED display panel, wherein the array substrate includes an effective display area, the effective display area includes a fingerprint recognition area and a non-fingerprint recognition area, the array substrate includes a base substrate, a plurality of thin film transistors arranged on the base substrate, and a plurality of anodes arranged on the plurality of thin film transistors, wherein the gate, source and drain of each thin film transistor are located in the non-fingerprint recognition area, the fingerprint recognition area is provided with a transparent wire, and each anode in the fingerprint recognition area is connected to one of the thin film transistors through a transparent wire. By moving the metal device of the thin film transistor in the fingerprint recognition area out of the fingerprint recognition area, only retaining the anode metal in the fingerprint recognition area, and replacing the signal line connecting the anode metal and the thin film transistor with a transparent wire, the transmittance of the fingerprint recognition area is greatly increased while ensuring the normal display of the fingerprint recognition area.

[0004] However, in the actual implementation process, the utility model applicant found that Figure 1As shown, this type of technical solution usually prepares a transparent wire 103 at a predetermined position on the substrate 101 and the pixel definition layer 102, and then forms an anode metal layer 104 thereon by evaporation, sputtering, etc., and then adds a photoresist 105 above the area where the anode metal layer 104 is to be retained, and then selectively removes part of the anode metal by etching liquid, and finally forms a connection structure between the anode metal and the transparent wire. Due to the problem of cellular structure design, a certain amount of liquid often accumulates at the edge of the photoresist 105, where the boundary between the transparent wire 103 and the anode metal is to be formed. Excessive liquid will cause over-etching, and then the transparent wire 103 under the anode metal layer 104 is also etched, which in turn causes the risk of disconnection, resulting in the problem of reduced product yield. Utility Model Content

[0005] In view of the above problems existing in the prior art, a transparent wire structure is provided; on the other hand, an OLED device using the transparent wire structure is provided; on the other hand, an OLED cell structure implemented based on the transparent wire structure is provided.

[0006] The specific technical solutions are as follows:

[0007] A transparent wire structure is applicable to an OLED device, wherein the OLED device comprises a substrate, a planarization layer formed on the substrate, and a functional area formed on the planarization layer, wherein a wiring area is arranged outside the functional area, and the transparent wire structure is formed in the wiring area;

[0008] The transparent wire structure comprises:

[0009] A transparent lead layer, wherein the transparent lead layer is located above the substrate;

[0010] An electrode metal layer, the electrode metal layer is located above the transparent lead layer, and the electrode metal layer is connected to the OLED device;

[0011] The electrode metal layer is provided with a blocking region at a predetermined position above the planarization layer, and the blocking region covers the transparent lead layer in a top-view direction.

[0012] On the other hand, the blocking area is rectangular in a plan view, and the blocking area extends outward from the edge of the transparent lead layer by a predetermined blocking interval.

[0013] On the other hand, the blocking interval is greater than or equal to 1.2 um.

[0014] On the other hand, the cross section of the planarization layer is trapezoidal, and the transparent lead layer and the electrode metal layer extend along the inclined surface of the planarization layer to above the planarization layer.

[0015] On the other hand, a light-emitting definition layer is formed above the transparent wire structure, and the light-emitting definition layer is located between adjacent OLED devices.

[0016] On the other hand, the electrode metal layer is connected to the anode or cathode of the OLED device.

[0017] An OLED device, wherein the anode of the OLED device is connected to the transparent wire structure.

[0018] An OLED cell structure comprises a plurality of OLED devices, each of which is respectively connected to the transparent wire structure.

[0019] On the other hand, the transparent conductive line structure is in a zigzag shape, a Z shape, or a Y shape.

[0020] On the other hand, the transparent wire structure is connected between the OLED device and the control unit;

[0021] The transparent wire structure connects 1 to 4 of the OLED devices.

[0022] The above technical solution has the following advantages or beneficial effects:

[0023] In view of the problem that the junction between the transparent wire and the electrode in the prior art may be over-etched due to the accumulation of liquid medicine, in this solution, improvements are made to the junction area between the electrode metal layer and the transparent wire structure, forming a blocking area that partially extends to the top of the device. Since the blocking area extends to the upper surface of the planarization layer, during processing, the corresponding photoresist recessed part is also pushed back to the top of the planarization layer. Compared with the traditional recessed structure, it is not easy to cause liquid medicine accumulation, and the risk of over-etching of the metal layer is reduced, thereby achieving effective protection of the transparent wire layer below, avoiding wire breakage, and improving the device yield. BRIEF DESCRIPTION OF THE DRAWINGS

[0024] The embodiments of the present invention will be described more fully with reference to the attached drawings, which are however only used for illustration and description and are not intended to limit the scope of the present invention.

[0025] Figure 1 It is a schematic diagram of the prior art;

[0026] Figure 2 A side view of an embodiment of the utility model;

[0027] Figure 3 A top view of an embodiment of the utility model;

[0028] Figure 4This is a schematic diagram of an OLED device in an embodiment of the utility model;

[0029] Figure 5 A schematic diagram of a cell structure of an embodiment of the utility model;

[0030] Figure 6 A schematic diagram of a cell structure of an embodiment of the utility model;

[0031] Figure 7 A schematic diagram of a cell structure of an embodiment of the utility model; DETAILED DESCRIPTION

[0032] The following will be combined with the drawings in the embodiments of the utility model to clearly and completely describe the technical solutions in the embodiments of the utility model. Obviously, the described embodiments are only part of the embodiments of the utility model, not all of the embodiments. Based on the embodiments of the utility model, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the utility model.

[0033] It should be noted that, in the absence of conflict, the embodiments of the present invention and the features in the embodiments can be combined with each other.

[0034] The present invention will be further described below in conjunction with the accompanying drawings and specific embodiments, but they are not intended to limit the present invention.

[0035] The utility model includes:

[0036] A transparent wire structure is suitable for an OLED device.

[0037] The OLED device includes a substrate A1, a planarization layer A2 formed on the substrate A1, and a functional region A3 formed on the planarization layer A2.

[0038] The functional area A3 at least includes a hole transport layer, an electron transport layer, a cathode, an anode and other structures. Depending on the device type, the cathode may be at the bottom or the anode may be at the bottom, but at least one electrode is located at the bottom of the device, directly contacting the planarization layer A2 and connecting to external wires.

[0039] A wiring area is provided outside the functional area A3, and the wiring area is used to form a transparent wire structure;

[0040] If Figure 2 As shown, the transparent wire structure includes:

[0041] A transparent lead layer 1, wherein the transparent lead layer 1 is located above the substrate A1;

[0042] An electrode metal layer 2, the electrode metal layer 2 is located above the transparent lead layer 1, and the electrode metal layer 2 is connected to the OLED device;

[0043] The electrode metal layer 2 is provided with a blocking region 21 at a predetermined position above the planarization layer A2. Figure 3 As shown, the blocking region 21 covers the transparent lead layer 2 in a top view direction.

[0044] Specifically, in view of the problem that the boundary between the transparent wire and the electrode in the prior art may be over-etched due to the accumulation of liquid medicine, in this embodiment, the transparent wire structure is improved, and a blocking area 21 is additionally prepared at a predetermined position of the electrode metal layer 2 above the planarization layer A2. The blocking area 21 covers the transparent lead layer 2 in the top view direction and extends to the top of the planarization layer A2. Since the blocking area 21 extends to the upper surface of the planarization layer, the corresponding photoresist recessed part is also pushed back to the top of the planarization layer during processing, and the recess is converted into a right-angle turn from the photoresist-blocking area 21 to the electrode metal layer 2. Compared with the recessed part, it is not easy to accumulate liquid medicine, reducing the risk of over-etching caused by liquid medicine accumulation, thereby protecting the transparent lead layer 1 below the electrode metal layer 2, avoiding wire breakage, and improving the device yield.

[0045] In the actual preparation process, according to the traditional semiconductor preparation process, after the planarization layer A2 is prepared and the position of the pixel unit is defined, a transparent wire layer A1 and an electrode metal layer 2 are formed in sequence on the substrate A1 and the planarization layer A2 by evaporation, sputtering and other processes, and then a corresponding photoresist is set to etch the electrode metal layer 2 to form an electrode metal layer 2 with a blocking area 21, wherein the area of ​​the electrode metal layer 2 located in the pixel unit will be used as the anode or cathode in the subsequent device.

[0046] In one embodiment, the blocking region 21 is rectangular in a plan view, and the blocking region 21 extends outward from the edge of the transparent lead layer 1 by a predetermined blocking interval.

[0047] Specifically, in order to achieve a better covering effect on the transparent lead layer 1 below and prevent the etching solution from penetrating from the edge, in the present embodiment, in the area where the transparent lead layer 1 and the electrode metal layer 2 are predetermined to form an interface, predetermined blocking intervals are respectively extended along the edge of the transparent lead layer 1, thereby forming a rectangular blocking area 21 to cover the electrode metal layer 2, thereby achieving a better shielding effect.

[0048] In one embodiment, the blocking interval is greater than or equal to 1.2 um.

[0049] Specifically, in order to achieve a better covering effect on the transparent lead layer 1 below, the utility model inventor conducted repetitive tests on common etching solutions, photoresist processes, etc. and believed that when the blocking interval is greater than or equal to 1.2um, the transparent lead layer 1 below can be fully covered to prevent the residual solution at the photoresist corner from penetrating along the interface, thereby achieving a better blocking effect.

[0050] In one embodiment, the cross section of the planarization layer A2 is trapezoidal, and the transparent lead layer 1 and the electrode metal layer 2 extend along the inclined surface of the planarization layer A2 to above the planarization layer A2.

[0051] Specifically, in order to achieve a better preparation effect, in this embodiment, the planarization layer A2 used to form the functional area A3 is also adjusted. On the basis of preparing a planarization layer A2 with a certain thickness, a specific inclined surface is further formed on the side of the planarization layer A2. When preparing the transparent lead layer 1 and the electrode metal layer 2, the transparent lead layer 1 and the electrode metal layer 2 are sequentially formed on the top surface and the inclined surface of the planarization layer A2, and are led out to the substrate A1 at the bottom, while the blocking area 21 is located on the top surface of the planarization layer A2, and it is not easy to form a depression of accumulated liquid on the inclined surface, thereby improving the preparation yield.

[0052] In one embodiment, a light-emitting definition layer 3 is formed above the transparent wire structure, and the light-emitting definition layer 3 is located between adjacent OLED devices.

[0053] Specifically, in order to achieve a better device preparation effect, after completing the preparation of the electrode metal layer 2 and the functional area A3, the luminescent definition layer 3 can be added to fill the area above the transparent wire structure and between two adjacent groups of functional areas A3, thereby completing the device preparation process.

[0054] An OLED device, the anode of which is connected to the transparent wire structure.

[0055] In the implementation process, based on the transparent wire structure, the following can be prepared: Figure 4 The OLED device shown. In addition to the substrate A1 and the planarization layer A2 formed on the substrate A1, the functional area A3 of the device includes:

[0056] Anode A31, where the anode A31 is prepared above the planarization layer A2 and is connected to the electrode metal layer 2 in the transparent wire structure when extending outside the functional area;

[0057] A hole injection layer A32, wherein the hole injection layer A32 is formed above the anode A31;

[0058] A hole transport layer A33, wherein the hole transport layer A33 is formed above the hole injection layer A32;

[0059] A light-emitting functional layer A34, wherein the light-emitting functional layer A34 is formed above the hole transport layer A33;

[0060] An electron transport layer A35, where the electron transport layer A35 is formed above the light emitting functional layer A34;

[0061] Cathode A36 and cathode A46 are formed above the electron transport layer A35.

[0062] An OLED cell structure includes a plurality of OLED devices, and each OLED device is respectively connected to the transparent wire structure.

[0063] In the implementation process, in order to realize the preparation of the OLED panel, in this embodiment, a variety of OLED cell structures are also realized based on the transparent wire structure, as follows:

[0064] Embodiment 1:

[0065] like Figure 5 As shown, in the cellular structure, a one-to-four connection mode is adopted between the control unit B1 and the controlled unit B2. In this embodiment, one end of the transparent wire structure is output through the control unit B1, pointing to the controlled unit B2 at a first angle, and then pointing to the next controlled unit B2 at a second angle, until it is connected to four controlled units B2 in sequence, the controlled unit B2 has the same color as the control unit B1, and each controlled unit B2 is located at the corner of the transparent wire structure.

[0066] Embodiment 2:

[0067] like Figure 6 As shown, in this cellular structure, a one-to-two connection method is adopted between the control unit C1 and the controlled unit C2. In this embodiment, the transparent wire structure includes a first wire C31 and a second wire C32, wherein the first wire C31 is output from the control unit B1 and connected to the remote controlled unit C2 in a "Z" shape, wherein the middle part has a vertical extension portion, and the nearby controlled unit C2 is connected through the extension portion. The first part of the second wire C32 is output from the control unit B1 and connected to the nearby controlled unit C2 in a "Z" shape, and the second part is connected to the nearby controlled unit C2 and the distant controlled unit C2 in a "Z" shape, thereby bypassing the wiring area of ​​the remaining part of the controlled unit C2 to achieve a more compact wiring effect. The controlled unit B2 has the same color as the control unit B1. Generally speaking, the OLED panel has at least three colors, and includes a group of first wires C31 and two groups of second wires C32.

[0068] Embodiment three:

[0069] like Figure 7As shown, in this cell structure, a one-to-one connection method is adopted between the control unit D1 and the controlled unit D2. In this embodiment, the transparent wire structure includes a first wire D31 and a second wire D32, wherein the first wire D31 is output from the control unit B1 and connected to the controlled unit C2 in a "Z" shape, thereby making way for the wiring area of ​​the controlled unit C2 of other colors. The second wire C32 is output from the control unit B1 and connected to the controlled unit C2 in a "Z" shape to achieve a more compact wiring effect. The controlled unit B2 has the same color as the control unit B1. Generally speaking, the OLED panel has at least three colors, and includes a group of first wires C31 and two groups of second wires C32.

[0070] The above are only preferred embodiments of the present invention, and do not limit the implementation mode and protection scope of the present invention. Those skilled in the art should be aware that all solutions obtained by equivalent substitutions and obvious changes made using the description and illustrations of the present invention should be included in the protection scope of the present invention.

Claims

1. A transparent wire structure, applicable to an OLED device, wherein the OLED device comprises a substrate, a planarization layer formed on the substrate, and a functional region formed on the planarization layer, wherein a wiring region is disposed outside the functional region, and the transparent wire structure is formed in the wiring region; It is characterized in that The transparent wire structure comprises: A transparent lead layer, wherein the transparent lead layer is located above the substrate; An electrode metal layer, the electrode metal layer is located above the transparent lead layer, and the electrode metal layer is connected to the OLED device; The electrode metal layer is provided with a blocking region at a predetermined position above the planarization layer, and the blocking region covers the transparent lead layer in a top-view direction.

2. The transparent conductive line structure according to claim 1, characterized in that: The blocking area is rectangular in a plan view, and the blocking area extends outward from the edge of the transparent lead layer by a predetermined blocking interval.

3. The transparent conductive line structure according to claim 2, characterized in that: The blocking interval is greater than or equal to 1.2 um.

4. The transparent conductive line structure according to claim 1, characterized in that: The cross section of the planarization layer is trapezoidal, and the transparent lead layer and the electrode metal layer extend along the inclined surface of the planarization layer to above the planarization layer.

5. The transparent conductive line structure according to claim 1, characterized in that: A light-emitting definition layer is formed above the transparent wire structure, and the light-emitting definition layer is located between adjacent OLED devices.

6. The transparent conductive line structure according to claim 5, characterized in that: The electrode metal layer is connected to the anode or cathode of the OLED device.

7. An OLED device, characterized in that: The anode of the OLED device is connected to the transparent wire structure according to any one of claims 1 to 6.

8. An OLED cell structure, characterized in that: The OLED cell structure comprises a plurality of OLED devices, and each of the OLED devices is respectively connected to the transparent wire structure according to any one of claims 1 to 6.

9. The OLED cell structure according to claim 8, characterized in that: The transparent conductive line structure is in a zigzag shape, a Z shape, or a Y shape.

10. The OLED cell structure according to claim 8, characterized in that: The transparent wire structure is connected between the OLED device and the control unit; The transparent wire structure connects 1 to 4 of the OLED devices.