LED display chip and LED display module

Abstract

The utility model relates to the technical field of display equipment, in particular to an LED display chip and an LED display module. The LED display chip comprises a display structure, a driving structure and a circuit structure. The driving structure comprises a first active structure and a second active structure, and the first active structure, the display structure and the second active structure are electrically connected in sequence; the circuit structure comprises a first electrode, a second electrode, a first control electrode and a second control electrode, the first control electrode is connected to the grid electrode of the first active structure, and the second control electrode is electrically connected to the grid electrode of the second active structure. According to the LED display chip, the first active structure and the second active structure are arranged to be matched with the display structure, so that double-signal control can be performed on the display structure, and the overall structure of the LED display chip is more compact.

Description

Technical Field

[0001] This application relates to the field of display device technology, and in particular to an LED display chip and an LED display module. Background Technology

[0002] Light-emitting diodes (LEDs) have significant advantages over other active light sources, including small size, long lifespan, low power consumption, high brightness, and fast response speed, leading to their increasingly widespread application in daily life. Currently, Micro-LED display panels use a driving method where each pixel is driven by separate row and column scanning driver chips, located on the back of the display panel.

[0003] However, due to the limitations of Micro-LED's structural design and the characteristics of its point-to-point driving method, the size of the row and column driver chips is restricted. Large-scale configuration would occupy excessive space, affecting the feasibility of wiring. Furthermore, the large number of driver chips on the back of the display panel not only increases costs but also necessitates drilling holes for wiring due to their concentrated placement, thus compressing wiring space, increasing complexity, and ultimately leading to an increase in the number of display panel layers and a decrease in process yield.

[0004] Therefore, it is necessary to address the aforementioned issues in order to change the current situation. Utility Model Content

[0005] In view of the above problems, this utility model provides an LED display chip and an LED display module. By improving the driving structure of the LED display chip, the overall structure of the LED display chip is made more compact, thereby optimizing the wiring of the LED display module, so as to reduce the manufacturing difficulty and process defect rate of the LED display module.

[0006] The first aspect of this application provides an LED display chip, comprising:

[0007] Display structure;

[0008] A driving structure is stacked on top of the display structure; the driving structure includes a first active structure and a second active structure, the first active structure, the display structure, and the second active structure being electrically connected sequentially; and

[0009] The circuit structure includes a first electrode, a second electrode, a first control electrode, and a second control electrode. Along the circuit of the LED display chip, the first electrode is electrically connected to the end of the first active structure away from the display structure, the second electrode is electrically connected to the end of the second active structure away from the display structure, the first control electrode is connected to the gate of the first active structure, and the second control electrode is electrically connected to the gate of the second active structure.

[0010] In one possible implementation, the circuit structure further includes a first connection electrode and a second connection electrode, wherein the first connection electrode is connected to the first active structure and the display structure, respectively, and the second connection electrode is connected to the display structure and the first active structure, respectively.

[0011] In one possible implementation, the driving structure further includes a filling layer covering the first active structure, the second active structure, the first connecting electrode, and the second connecting electrode on the side away from the display structure.

[0012] In one possible implementation, the first active structure includes a first gallium nitride layer and a first aluminum gallium nitride layer stacked sequentially, the first electrode is connected to the source of the first gallium nitride layer, the first control electrode is connected to the gate of the first aluminum gallium nitride layer, and the first connection electrode is connected to the drain of the first gallium nitride layer and the display structure, respectively.

[0013] And / or the second active structure includes a second gallium nitride layer and a second aluminum gallium nitride layer stacked sequentially, the second electrode is connected to the source of the second gallium nitride layer, the second control electrode is connected to the gate of the second aluminum gallium nitride layer, and the second connection electrode is connected to the drain of the second gallium nitride layer and the display structure, respectively.

[0014] In one possible implementation, the first gallium nitride layer is an n-type gallium nitride layer; the second gallium nitride layer is an n-type gallium nitride layer.

[0015] In one possible implementation, the display structure includes a substrate and a first doped semiconductor layer, a light-emitting layer, and a second doped semiconductor layer sequentially stacked on the substrate, wherein the first doped semiconductor is electrically connected to the first active structure, and the second doped semiconductor is electrically connected to the second active structure.

[0016] In one possible implementation, the first doped semiconductor layer is an n-type semiconductor layer and the second doped semiconductor layer is a p-type semiconductor layer.

[0017] In one possible implementation, the first doped semiconductor layer is an n-type gallium nitride layer, the second doped semiconductor layer is a p-type gallium nitride layer, and the light-emitting layer is an indium gallium nitride layer.

[0018] In one possible implementation, the display structure further includes a first buffer layer disposed between the substrate and the first doped semiconductor layer.

[0019] In one possible implementation, the driving structure further includes a second buffer layer, which is disposed between the display structure and the first active structure, and between the display structure and the second active structure.

[0020] A second aspect of this application provides an LED display module, comprising: an LED display panel, wherein a plurality of LED display chips as described in any one of the above claims are arranged in an array in the LED display panel, and each of the LED display chips is electrically connected in sequence.

[0021] In one possible implementation, the LED display module further includes a driver chip, which is electrically connected to the first control electrode and the second control electrode, respectively.

[0022] In one possible implementation, the LED display module further includes a power supply module, which is electrically connected to the first electrode and the second electrode of the plurality of LED display chips, respectively.

[0023] Implementing the embodiments of this application has the following beneficial effects:

[0024] In the LED display chip of this embodiment, by setting a first active structure and a second active structure in the circuit of the LED display chip, the display effect of the display structure can be controlled by changing the input voltage of the first control electrode and the second control electrode respectively. For example, the first control electrode can be used to receive row control signals, and the second control electrode can be used to receive column control signals. When the LED display chip is applied in an LED display module, the row and column control functions of the LED display chip can be realized without setting an additional external control circuit.

[0025] In the LED display chip of this embodiment, by setting a first active structure and a second active structure to cooperate with the display structure, dual signal control can be performed on the display structure, so as to make the overall structure of the LED display chip more compact. When this LED display chip is applied in an LED display module, it can facilitate the wiring of the LED display module, thereby reducing the manufacturing cost of the LED display module and improving the yield rate. Attached Figure Description

[0026] The accompanying drawings are for illustrative purposes only and are not intended to limit the scope of the invention. Furthermore, the same reference numerals denote the same parts throughout the drawings. In the drawings:

[0027] Figure 1 A schematic diagram of the structure of the LED display chip in an embodiment of this utility model is shown;

[0028] Figure 2 An equivalent circuit diagram of the LED display chip in an embodiment of this utility model is shown;

[0029] Figure 3 A schematic diagram of the current of the LED display chip in an embodiment of this utility model is shown;

[0030] Figure 4 A schematic diagram of the LED display module architecture in an embodiment of this utility model is shown;

[0031] Figure 5 A timing diagram of the LED display chip driver in an embodiment of this utility model is shown;

[0032] Figures 6-14 A flowchart illustrating the manufacturing process of the LED display chip in an embodiment of this utility model is shown.

[0033] Figure label:

[0034] 1-LED display panel;

[0035] 10-LED display chip;

[0036] 100 - Display structure; 110 - Substrate; 120 - First doped semiconductor layer; 130 - Light-emitting layer; 140 - Second doped semiconductor layer; 150 - First buffer layer;

[0037] 200 - Driving structure; 210 - First active structure; 211 - First gallium nitride layer; 212 - First aluminum gallium nitride layer; 220 - Second active structure; 221 - Second gallium nitride layer; 222 - Second aluminum gallium nitride layer; 230 - Filling layer; 240 - Second buffer layer;

[0038] 300 - Circuit structure; 310 - First electrode; 320 - Second electrode; 330 - First control electrode; 340 - Second control electrode; 350 - First connecting electrode; 360 - Second connecting electrode;

[0039] 2-Driver chip; 3-Power supply module; 4-Circuit board;

[0040] a-Electrode pattern; b-Metal conductive layer; c-Photosensitive film layer; d-Etched opening. Detailed Implementation

[0041] Exemplary embodiments of the present invention will now be described in more detail with reference to the accompanying drawings. Although exemplary embodiments of the present invention are shown in the drawings, it should be understood that the present invention may be implemented in various forms and should not be limited to the embodiments set forth herein.

[0042] In existing Micro-LED display panels, to avoid affecting the layout of the LED display chips on the front side of the panel, the driver chips are typically located on the back side of the panel, requiring a large number of driver chips to act as row and column scanning tubes for each pixel to drive the display panel. Although these driver chips are small in size, their large number results in high material costs for Micro-LED display panels. Furthermore, because the driver chips are located on the back side of the panel, holes need to be drilled in the panel to complete the wiring between the driver chips and the display chips. The large number of driver and display chips further compresses the wiring space in the display panel, increasing the difficulty of wiring design, leading to an increase in the number of layers in the Micro-LED display panel and a decrease in process yield.

[0043] For the above technical issues, please refer to Figures 1 to 14 As shown, this embodiment of the present invention provides an LED display chip 10, which includes a display structure 100, a driving structure 200, and a circuit structure 300. The display structure 100 serves as the display unit of the LED display chip 10 and is used to emit light correspondingly under the drive of the driving structure 200 to realize the display function. The driving structure 200 and the display structure 100 are stacked together. The driving structure 200 includes a first active structure 210 and a second active structure 220. The circuit structure 300 includes a first electrode 310, a second electrode 320, a first control electrode 330, and a second control electrode 340. Along the circuit of the LED display chip 10, the first electrode 310 is electrically connected to the end of the first active structure 210 away from the display structure 100, the second electrode 320 is electrically connected to the end of the second active structure 220 away from the display structure 100, the first control electrode 330 is connected to the gate of the first active structure 210, and the second control electrode 340 is electrically connected to the gate of the second active structure 220.

[0044] In the LED display chip 10 of this embodiment, by setting a first active structure 210 and a second active structure 220 in the circuit of the LED display chip 10, the display effect of the display structure 100 can be controlled by changing the input voltage of the first control electrode 330 and the second control electrode 340 respectively. For example, the first control electrode 330 can be used to receive row control signals, and the second control electrode 340 can be used to receive column control signals. When the LED display chip 10 is applied in an LED display module, the row and column control functions of the LED display chip 10 can be realized without setting an additional external control circuit.

[0045] The LED display chips 10 arranged in the LED display panel can be considered as being composed of multiple smallest display units. The display function of the LED display panel is realized by controlling the light emission state of each smallest display unit.

[0046] For example, the smallest display unit in an LED display panel can be composed of LED display chips 10 that emit red, green, and blue colors. By controlling the light emission brightness of pixels of different colors in each smallest display unit, the smallest display unit can display a mixed effect of the three colors. At this time, the LED display panel can display rich and colorful images and videos, realizing full-color display of the LED display panel.

[0047] Alternatively, the smallest display unit in an LED display panel can be composed of LED display chips 10 that emit two colors. For example, the smallest display unit in an LED display panel can be composed of LED display chips 10 that emit two colors: red-green, red-blue, or green-blue. By controlling the light emission brightness of the pixels of the two colors in each smallest display unit, the smallest display unit can display a mixed effect of the two colors. In this case, the LED display panel can display simple dynamic images.

[0048] Alternatively, the smallest display unit in the LED display panel can emit only a single color. For example, the smallest display unit consists of a monochrome LED display chip 10 that emits red, green, or blue. By controlling the brightness of the single-color pixels in each smallest display unit, the smallest display unit displays a monochrome effect. In this case, the LED display panel can only display images and text of a single color.

[0049] The LED display chip 10 may further include a driving structure 200, in which a driving circuit is formed, which is electrically connected to the display structure 100. The driving circuit drives the pixels in the display structure 100, controlling the pixels to turn on or off. The driving circuit can be a field-effect transistor, such as a metal-oxide-semiconductor field-effect transistor (MOSFET).

[0050] In the LED display chip 10 of this embodiment, by setting the first active structure 210 and the second active structure 220 to cooperate with the display structure, the display structure 100 can be controlled by dual signals, so that the overall structure of the LED display chip 10 is more compact. When the LED display chip 10 is applied in the LED display module, it can facilitate the wiring of the LED display module, thereby reducing the manufacturing cost of the LED display module and improving the yield.

[0051] Specifically, see Figure 1 and Figure 3 As shown, the circuit structure 300 also includes a first connecting electrode 350 and a second connecting electrode 360. The first connecting electrode 350 is connected to the first active structure 210 and the display structure 100, respectively, and the second connecting electrode 360 ​​is connected to the display structure 100 and the first active structure 210, respectively.

[0052] In this embodiment, by arranging the first connecting electrode 350 and the second connecting electrode 360 ​​separately and at intervals, the interference and attenuation of current during transmission can be effectively reduced, thereby ensuring the display stability of the display structure 100.

[0053] In one embodiment, the first connecting electrode 350 and the second connecting electrode 360 ​​can be respectively disposed on opposite sides of the second active structure 220 to separate the first connecting electrode 350 and the second connecting electrode 360. This not only optimizes the heat dissipation performance of the LED display chip 10, but also facilitates the independent fabrication of the first connecting electrode 350 and the second connecting electrode 360 ​​during the fabrication of the LED display chip 10, reducing the possibility of short circuits and thus improving the yield of the LED display chip 10. Furthermore, by disposing the first connecting electrode 350 and the second connecting electrode 360 ​​on opposite sides of the second active structure 220, the space in the length direction of the LED display chip 10 can be fully utilized, resulting in a more compact structure and a smaller thickness for the LED display chip 10.

[0054] In one embodiment, the driving structure 200 further includes a filling layer 230, which covers the first active structure 210, the second active structure 220, the first connecting electrode 350, and the second connecting electrode 360 ​​on the side away from the display structure 100.

[0055] Specifically, the filler layer 230 can be made of composite materials or polymers with excellent insulation and thermal conductivity, which can provide effective electrical isolation for the circuit and prevent short circuits between different electrodes. Specifically, the filler layer 230 can be made of resin.

[0056] In some embodiments, the thermal management performance can be further improved by introducing a material with thermally conductive properties into the filler layer 230. This effectively conducts the heat generated by the first active structure 210 and the second active structure 220 to the back, thereby reducing the temperature of the display structure 100 and helping to improve the lifespan and operational stability of the LED display chip 10. Furthermore, by providing the filler layer 230 in the driving structure 200, reflected light and scattering phenomena can be reduced, minimizing image distortion caused by light refraction and ensuring the clarity and brightness uniformity of the display effect.

[0057] Furthermore, the introduction of the filler layer 230 makes the entire LED display chip 10 more tightly and flatly packaged, which can effectively block the intrusion of external moisture and dust, significantly improve the stable operation capability of the LED display chip 10 in harsh environments, extend its overall service life, and maintain the long-term performance of the display module. At the same time, since the surface of the driving structure 200 away from the display structure 100 is flatter, it can also facilitate the processing of the LED display chip 10 during processing steps such as mass transfer.

[0058] In one embodiment, the first active structure 210 includes a first gallium nitride layer 211 and a first aluminum gallium nitride layer 212 stacked sequentially, a first electrode 310 connected to the source of the first gallium nitride layer 211, a first control electrode 330 connected to the gate of the first aluminum gallium nitride layer 212, and a first connection electrode 350 connected to the drain of the first gallium nitride layer 211 and the display structure 100, respectively.

[0059] And / or the second active structure 220 includes a second gallium nitride layer 221 and a second aluminum gallium nitride layer 222 stacked sequentially, a second electrode 320 connected to the source of the second gallium nitride layer 221, a second control electrode 340 connected to the gate of the second aluminum gallium nitride layer 222, and a second connection electrode 360 ​​connected to the drain of the second gallium nitride layer 221 and the display structure 100, respectively.

[0060] In this embodiment, by combining the first gallium nitride layer 211 and the first aluminum gallium nitride layer 212 to form a two-dimensional electron gas (2DEG) structure, the LED display chip 10 can have higher driving efficiency (including but not limited to driving time and leakage current), thereby giving the LED display chip 10 higher operating efficiency and response speed. Especially in high-brightness, high-resolution display applications, the wide bandgap characteristics of gallium nitride material make it perform well in terms of luminous efficiency and high-temperature resistance, significantly improving display brightness and color reproduction.

[0061] By stacking the first gallium nitride layer 211 with the first aluminum gallium nitride layer 212, and the second gallium nitride layer 221 with the second aluminum gallium nitride layer 222, a highly efficient electron migration channel is formed. Utilizing the different band structures of the two materials enhances electron injection and transport, effectively reduces leakage current, and achieves better gate voltage control. This configuration not only improves linearity during operation but also enables higher switching frequencies, thus supporting the presentation of more complex display content and dynamic images.

[0062] In terms of specific working mechanism, the first control electrode 330 and the second control electrode 340 can regulate the state of current flowing through the first gallium nitride layer 211 and the second gallium nitride layer 221 by applying an appropriate gate voltage, thereby achieving precise adjustment of display brightness and color.

[0063] Specifically, the first gallium nitride layer 211 is an n-type gallium nitride layer; the second gallium nitride layer 221 is an n-type gallium nitride layer.

[0064] In this embodiment, the n-type gallium nitride material is doped with an appropriate amount of electron donor elements (such as silicon or phosphorus) to achieve a high carrier concentration and excellent conductivity. This design can effectively enhance the electron transport capability of the first active structure 210 and the second active structure 220, achieving higher conductivity, thereby better supporting the high current driving requirements of the LED display chip 10 and improving its operating efficiency.

[0065] Furthermore, the application of n-type gallium nitride provides excellent thermal management performance for the entire driving structure 200. Due to the high thermal conductivity of gallium nitride, this facilitates effective heat dissipation, reduces heat accumulation in the LED display chip 10 during prolonged use, and thus avoids performance degradation due to overheating, thereby improving the lifespan and stability of the LED display chip 10.

[0066] In one embodiment, the display structure 100 includes a substrate 110 and a first doped semiconductor layer 120, a light-emitting layer 130, and a second doped semiconductor layer 140 sequentially stacked on the substrate 110. The first doped semiconductor is electrically connected to a first active structure 210, and the second doped semiconductor is electrically connected to a second active structure 220.

[0067] In this embodiment, the substrate 110 serves as the basic support structure for the LED display chip 10, and other structural layers of the LED display chip 10 can be sequentially formed on the substrate 110. The display structure 100 is the core functional layer of the LED display chip 10, and the LED display chip 10 achieves its function by emitting light through the display structure 100.

[0068] The substrate 110 can be a rigid substrate, formed from a hard material. For example, the material of the substrate 110 can be silicon carbide (SiC), silicon (Si), or sapphire (Al2O3). In this case, a separate substrate 110 can be provided, and other structural layers of the LED display chip 10 can be formed directly on the substrate 110.

[0069] Alternatively, the substrate 110 can also be a flexible substrate, formed from a flexible material. For example, the material of the substrate 110 can be polyimide (PI), and the substrate 110 can be a polyimide film. In this case, the flexible substrate 110 can be first attached to the rigid substrate, and after other structural layers of the LED display chip 10 are formed on the substrate 110, the substrate 110 can be peeled off from the rigid substrate.

[0070] In this structure, one of the first doped semiconductor layer 120 and the second doped semiconductor layer 140 is an n-type semiconductor layer and the other is a p-type semiconductor layer. The light-emitting layer 130 is sandwiched between the n-type semiconductor layer and the p-type semiconductor layer, together forming a PN junction.

[0071] In the PN junction formed by the display structure 100, electrons dominate in the n-type semiconductor layer and holes dominate in the p-type semiconductor layer. When current passes through the display structure 100, electrons and holes recombine in the light-emitting layer 130 between them, emitting energy in the form of photons, thus realizing the light-emitting function of the display structure 100. The color of the light emitted by the display structure 100 is determined by the material of the light-emitting layer 130; for example, the light emitted by the display structure 100 can be red, green, or blue.

[0072] When a positive voltage is applied to the display structure 100, that is, when the p-type semiconductor layer is connected to the positive terminal and the n-type semiconductor layer is connected to the negative terminal, electrons in the n-type semiconductor layer are attracted to the p-type semiconductor layer, while holes in the p-type semiconductor layer move towards the n-type semiconductor layer. Current flows through the PN junction, and the display structure 100 is illuminated. When a reverse voltage is applied to the display structure 100, that is, when the n-type semiconductor layer is connected to the positive terminal and the p-type semiconductor layer is connected to the negative terminal, electrons in the n-type semiconductor layer accumulate within the n-type semiconductor layer, and holes in the p-type semiconductor layer accumulate within the p-type semiconductor layer. Electrons do not move, no current flows through the PN junction, and the display structure 100 is turned off.

[0073] Specifically, the first doped semiconductor layer 120 is an n-type gallium nitride layer, the second doped semiconductor layer 140 is a p-type gallium nitride layer, and the light-emitting layer 130 is an indium gallium nitride layer.

[0074] In the display structure 100 of this embodiment, the excellent electron and hole transport characteristics of the n-type and p-type gallium nitride layers are utilized to ensure efficient recombination of electrons and holes in the light-emitting layer 130, thereby achieving optimized light emission effect.

[0075] First, the first doped semiconductor layer 120, as an n-type gallium nitride layer, is doped with an appropriate amount of electron donor material (such as silicon), giving it excellent carrier transport capability. When current passes through this layer, excess electrons can be effectively guided to the light-emitting layer 130. The efficiency of this process directly affects the current injection capability of the LED and the final light output power.

[0076] The second doped semiconductor layer 140, as a p-type gallium nitride layer, is doped with a hole-accepting material (such as aluminum), which can effectively provide a hole supply, enabling electrons and holes in the light-emitting layer 130 to recombine efficiently and generate light. The good conductivity and high doping concentration of the p-type gallium nitride layer will help reduce the forward voltage drop of the device, which will help improve the overall energy efficiency and luminous intensity.

[0077] The emitting layer 130 is made of indium gallium nitride (InGaN), and its bandgap width can be controlled by adjusting the proportion of indium, thereby achieving different colors of light emission. This adjustability allows for diverse color gamut coverage, meeting users' needs for different emission colors in practical applications, such as red, green, and blue, thus supporting the realization of full-color displays. Due to the superior optoelectronic properties of indium gallium nitride, the emitting layer 130 can maintain stable luminous efficiency under high driving current, reducing degradation problems caused by overheating or high load.

[0078] Furthermore, the display structure 100 also includes a first buffer layer 150, which is disposed between the substrate 110 and the first doped semiconductor layer 120.

[0079] Understandably, the significant difference in thermal expansion coefficients between the substrate 110 material (such as sapphire or silicon) and gallium nitride leads to stress concentration and dislocations during growth or operation, affecting the performance of the LED display chip 10. The first buffer layer 150 can be made of a material with an adaptive lattice constant, such as aluminum nitride (AlN) or other suitable nitrides. Through layer-by-layer growth, complex interlayer adaptations are gradually achieved, thereby effectively reducing the aforementioned stress and improving the bonding quality of each layer in the LED display chip 10.

[0080] Secondly, the first buffer layer 150 provides a good electric field distribution for the first doped semiconductor layer 120, thereby optimizing the injection and transport of charge carriers. When current passes through the first buffer layer 150, its band structure design can effectively reduce the interface barrier with the substrate 110, thereby improving the current injection efficiency. This optimization helps to reduce energy loss, increase the current injection amount in the light-emitting layer 130, and ultimately achieve the goal of improving the light output intensity.

[0081] In addition, by providing a first buffer layer 150 in the display structure 100, the first buffer layer 150 can also improve heat conduction. The first buffer layer 150 can help dissipate the heat generated when the current passes through, thereby reducing the operating temperature of the light-emitting layer 130, reducing the light-emitting decay caused by heat rise, and thus improving the service life of the LED display chip 10.

[0082] Furthermore, the driving structure 200 also includes a second buffer layer 240, which is disposed between the display structure 100 and the first active structure 210, as well as between the display structure 100 and the second active structure 220.

[0083] In this embodiment, by providing a second buffer layer 240 at the interface between the driving structure 200 and the display structure 100, the second buffer layer 240 can effectively reduce the resistance between the display structure 100 and the first active structure 210 and the second active structure 220, thereby reducing the interface voltage drop. This is crucial for the transmission of high-frequency driving signals, ensuring faster switching speeds and higher driving efficiency, thus achieving a fast-response display effect.

[0084] Secondly, the second buffer layer 240 can also isolate the heat emitted by the display structure 100 to avoid the high temperature affecting the driving performance of the driving structure 200. When the second buffer layer 240 uses a high thermal conductivity material such as aluminum nitride or thermally conductive plastic, it can effectively disperse the heat of the display structure 100 and / or driving structure 200 to the external environment in a timely manner, reduce the overall temperature rise, and prevent thermal degradation caused by excessive temperature.

[0085] Furthermore, the second buffer layer 240 also provides effective isolation, preventing electrical interference between the display structure 100 and the driving structure 200. For example, when the first active structure 210 and the second active structure 220 are operating, mismatch in their electrical performance may lead to cross-layer signal interference, thereby affecting the displayed image quality. By setting the second buffer layer 240, this signal interference problem can be effectively reduced, thus ensuring clearer and more stable image signal transmission for the display.

[0086] At the same time, the second buffer layer 240 can also improve the durability of the entire driving structure. The second buffer layer 240 can play a buffering role between different material layers, which can effectively reduce the difference in expansion and contraction of each layer during thermal cycling, reduce material fatigue and warping caused by electromechanical changes, thereby improving the overall service life and reliability of the LED display chip 10.

[0087] Figures 6-14 A process flow diagram illustrating the manufacturing process of the LED display chip provided in this application embodiment. (Refer to...) Figures 6 to 14 As shown below, the manufacturing process of the LED display chip 10 provided in the embodiments of this application will be described in detail.

[0088] Reference Figure 6 As shown, a substrate 110 is first provided, and an epitaxial layer is grown on the substrate 110. Specifically, a first buffer layer 150 is first deposited and formed on the substrate 110, and then a first doped semiconductor layer 120, a light-emitting layer 130, and a second doped semiconductor layer 140 are epitaxially grown on the first buffer layer 150 to form a light-emitting structure. Then, a driving structure 200 is epitaxially grown on the display structure 100.

[0089] Reference Figure 7 As shown, the epitaxial layer grown on the substrate 110 is etched using photolithography to expose a local surface of the first doped semiconductor layer 120 in the display structure 100, a local surface of the second doped semiconductor layer 140 in the display structure 100, a local surface of the first gallium nitride layer 211 located in the lower layer of the first active structure 210, and a local surface of the second gallium nitride layer 221 located in the lower layer of the second active structure 220.

[0090] Reference Figure 8 As shown, the initial electrode pattern a is then fabricated on the epitaxial layer. This can be achieved by first depositing a full-layer conductive metal layer on the epitaxial layer, and then patterning the conductive metal layer using photolithography to form the initial electrode pattern a.

[0091] Reference Figure 9As shown, after the initial electrode pattern a is fabricated, an insulating resin material is deposited on the epitaxial layer to form a resin planarization layer 130. The resin planarization layer 130 fills the depressions in the epitaxial layer and isolates the electrode pattern a.

[0092] Reference Figure 10 As shown, a metal conductive layer b is deposited on the epitaxial layer to connect the electrode patterns a together.

[0093] Reference Figure 11 As shown, a photosensitive film layer c is formed on the metal conductive layer b.

[0094] Reference Figure 12 As shown, the photosensitive film layer c is exposed and developed to form an etching opening d on the photosensitive film layer c. Then, along the etching opening d on the photosensitive film layer c, the metal conductive layer b is etched to remove unwanted portions of the metal conductive layer b.

[0095] Reference Figure 13 As shown, the photosensitive film layer c is removed. At this time, the first electrode 310, the second electrode 320, the first control electrode 330, the second control electrode 340, the first connecting electrode 350, and the second connecting electrode 360 ​​have been formed on the epitaxial layer. Insulating resin material is then deposited on the epitaxial layer, and the depressions in the epitaxial layer are filled using the resin planarization layer 130.

[0096] Reference Figure 14 As shown, the first electrode 310, second electrode 320, first control electrode 330, second control electrode 340, first connecting electrode 350, and second connecting electrode 360 ​​are subjected to epitaxial growth and protection treatment. This includes electroplating the surfaces of the first electrode 310, second electrode 320, first control electrode 330, second control electrode 340, first connecting electrode 350, and second connecting electrode 360 ​​with metals such as nickel and gold.

[0097] This utility model also provides an LED display module, which includes an LED display panel 1, in which multiple LED display chips 10 as described in any of the above embodiments are arranged in an array, and each LED display chip 10 is electrically connected in sequence. As mentioned above, by integrating the driving circuit into the LED display chip 10, the driving method of the LED display chip 10 is simplified. Figure 4As shown, a driver chip 2 and a power module 3 can be provided only on the back of the LED display panel. The driver chip 2 is, for example, an OLED driver chip. Each switching channel of the driver chip 2 corresponds to a row of LED display chips 10 arranged on the LED display panel, and each control channel of the driver chip 2 corresponds to a column of LED display chips 10 arranged on the LED display panel. In this way, the first control electrode 330 and the second control electrode 340 of each LED display chip 10 can be controlled by the driver chip 2 to perform row and column control of each LED display chip 10.

[0098] Figure 2 The equivalent circuit diagram of the LED display chip 10 provided in the embodiments of this application is shown. Figure 4 This is a schematic diagram of the architecture of an LED display module provided in an embodiment of this application.

[0099] Reference Figure 2 As shown, the first electrode 310 is the circuit input, the second electrode 320 is the circuit output, the first control electrode 330 is the row control signal, and the second control electrode 340 is the column control signal. By adjusting the voltage input to the LED display chip 10 by the first control electrode 330 and the second control electrode 340, the pixel on / off state and display brightness of the LED display chip 10 can be controlled.

[0100] Figure 3 This is a timing diagram of the LED display chip provided in an embodiment of this application. (Refer to...) Figure 4 As shown in the figure, the waveform at the top indicates the waveform of the second control electrode 340, and the waveform at the bottom indicates the waveform of the first control electrode 330. In both waveforms, a high level represents on, and a low level represents off.

[0101] When the control channel of the driver chip 2 is turned on, current flows through the first electrode 310, and the driver chip 2 applies the required turn-on voltage for the pixels in the LED display panel to the first active structure 210 and the second active structure 220, respectively. For example, the turn-on voltage can be 3V, 4V, or 5V. Immediately afterwards, the first control electrode 330 is turned on, and current flows through the driving circuit in the first active structure 210. At the same time, the second control electrode 340 is turned on, and current flows through the driving circuit in the second active structure 220, thereby illuminating the pixels of the display structure 100 in the LED display chip 10.

[0102] Specifically, the power module 3 can be integrated onto a flexible printed circuit (FPC) 4, for example. The input terminal of the power module 3 can be connected to a battery (not shown in the figure), and the aforementioned first control electrode 330 and second control electrode 340 can both be connected to the output terminal of the power module 3, or connected to the power module 3 via the driver chip 2. The battery supplies power to the driver chip 2 through the power module 3, enabling the driver chip 2 to control each LED display chip 10. For example, the power module 3 may include a DC-to-DC converter.

[0103] by Figure 4 Taking the 3x3 LED display chip 10 shown as an example, one output of the power module 3 is connected to the first electrode 310, and the other output is connected to the driver chip 2. Multiple control channels of the driver chip 2 are respectively connected to the first control electrode 330 of the 3x3 LED display chip 10 and the second control electrode 340 of the 3x3 LED display chip 10. Specifically, by opening the first channel of the first control electrode 330, and applying an activation voltage to the second control electrode 340 of the leftmost column of LED display chips 10 through the driver chip 2, the LED display chip 10 in the upper left corner is illuminated.

[0104] This design reduces the number of chips on the back of the LED display panel, resulting in a smaller chip area and lower manufacturing costs. Furthermore, it significantly reduces the number of holes required in the LED display panel, facilitating wiring and making the wiring more regular and simpler. Additionally, it reduces the number of layers in the LED display panel, improving the yield rate of the manufacturing process.

[0105] Simultaneously, there is no need to fabricate dedicated driver circuits, nor to precisely transfer and bond a large number of LED display chips (10 in each case) to another driver circuit. This effectively reduces the design and manufacturing complexity of LED display panels, simplifies the manufacturing process, and lowers production costs. Furthermore, it increases the integration level of LED display panels, enhances display performance, and improves yield and reliability.

[0106] In the description of the embodiments of this application, it should be noted that the terms "center," "longitudinal," "lateral," "upper," "lower," "front," "rear," "left," "right," "vertical," "horizontal," "top," "bottom," "inner," and "outer," etc., indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings. They are only for the convenience of describing the embodiments of this application and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation. Therefore, they should not be construed as limitations on the embodiments of this application. In addition, the terms "first," "second," and "third" are used for descriptive purposes only and should not be construed as indicating or implying relative importance.

[0107] In the description of the embodiments of this application, it should be noted that, unless otherwise explicitly specified and limited, the terms "connected" and "linked" should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral connection; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium. Those skilled in the art can understand the specific meaning of the above terms in the embodiments of this application based on the specific circumstances.

[0108] In the embodiments of this application, unless otherwise expressly specified and limited, "above" or "below" the second feature can mean that the first feature is in direct contact with the second feature, or that the first feature is in indirect contact with the second feature through an intermediate medium. Furthermore, "above," "on top of," and "over" the second feature can mean that the first feature is directly above or diagonally above the second feature, or simply that the first feature is at a higher horizontal level than the second feature. "Below," "below," and "under" the second feature can mean that the first feature is directly below or diagonally below the second feature, or simply that the first feature is at a lower horizontal level than the second feature.

[0109] In the description of this specification, the references to terms such as "one embodiment," "some embodiments," "example," "specific example," or "some examples," etc., refer to specific features, structures, materials, or characteristics described in connection with that embodiment or example, which are included in at least one embodiment or example of the embodiments of this application. In this specification, the illustrative expressions of the above terms do not necessarily refer to the same embodiment or example. Furthermore, the specific features, structures, materials, or characteristics described may be combined in any suitable manner in one or more embodiments or examples. Moreover, without contradiction, those skilled in the art can combine and integrate the different embodiments or examples described in this specification, as well as the features of different embodiments or examples.

[0110] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of this application, and are not intended to limit them. Although this application has been described in detail with reference to the foregoing embodiments, those skilled in the art should understand that modifications can still be made to the technical solutions described in the foregoing embodiments, or equivalent substitutions can be made to some of the technical features. Such modifications or substitutions do not cause the essence of the corresponding technical solutions to deviate from the spirit and scope of the technical solutions of the embodiments of this application.

Claims

1. An LED display chip (10), characterized in that, include: Display structure (100); A driving structure (200) is stacked on top of the display structure (100); the driving structure (200) includes a first active structure (210) and a second active structure (220), and the first active structure (210), the display structure (100) and the second active structure (220) are electrically connected in sequence; as well as The circuit structure (300) includes a first electrode (310), a second electrode (320), a first control electrode (330), and a second control electrode (340). Along the circuit of the LED display chip (10), the first electrode (310) is electrically connected to one end of the first active structure (210) away from the display structure (100), the second electrode (320) is electrically connected to one end of the second active structure (220) away from the display structure (100), the first control electrode (330) is connected to the gate of the first active structure (210), and the second control electrode (340) is electrically connected to the gate of the second active structure (220).

2. The LED display chip (10) according to claim 1, characterized in that, The circuit structure (300) further includes a first connecting electrode (350) and a second connecting electrode (360), wherein the first connecting electrode (350) is connected to the first active structure (210) and the display structure (100) respectively, and the second connecting electrode (360) is connected to the display structure (100) and the first active structure (210) respectively.

3. The LED display chip (10) according to claim 2, characterized in that, The driving structure (200) further includes a filling layer (230) which covers the first active structure (210), the second active structure (220), the first connecting electrode (350) and the second connecting electrode (360) on the side away from the display structure (100).

4. The LED display chip (10) according to claim 2, characterized in that, The first active structure (210) includes a first gallium nitride layer (211) and a first aluminum gallium nitride layer (212) stacked sequentially. The first electrode (310) is connected to the source of the first gallium nitride layer (211), the first control electrode (330) is connected to the gate of the first aluminum gallium nitride layer (212), and the first connection electrode (350) is connected to the drain of the first gallium nitride layer (211) and the display structure (100) respectively. And / or the second active structure (220) includes a second gallium nitride layer (221) and a second aluminum gallium nitride layer (222) stacked in sequence, the second electrode (320) is connected to the source of the second gallium nitride layer (221), the second control electrode (340) is connected to the gate of the second aluminum gallium nitride layer (222), and the second connection electrode (360) is connected to the drain of the second gallium nitride layer (221) and the display structure (100) respectively.

5. The LED display chip (10) according to claim 1, characterized in that, The display structure (100) includes a substrate (110) and a first doped semiconductor layer (120), a light-emitting layer (130) and a second doped semiconductor layer (140) sequentially stacked on the substrate (110). The first doped semiconductor is electrically connected to the first active structure (210), and the second doped semiconductor is electrically connected to the second active structure (220).

6. The LED display chip (10) according to claim 5, characterized in that, The display structure (100) further includes a first buffer layer (150), which is disposed between the substrate (110) and the first doped semiconductor layer (120).

7. The LED display chip (10) according to any one of claims 1-6, characterized in that, The driving structure (200) further includes a second buffer layer (240), which is disposed between the display structure (100) and the first active structure (210) and between the display structure (100) and the second active structure (220).

8. An LED display module, characterized in that, include: An LED display panel (1) is provided, wherein a plurality of LED display chips (10) as described in any one of claims 1-7 are arranged in an array, and each of the LED display chips (10) is electrically connected in sequence.

9. The LED display module according to claim 8, characterized in that, The LED display module also includes a driver chip (2), which is electrically connected to the first control electrode (330) and the second control electrode (340).

10. The LED display module according to claim 9, characterized in that, The LED display module also includes a power supply module (3), which is electrically connected to the first electrode (310) and the second electrode (320) of the plurality of LED display chips (10).

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