Film thickness measuring device

Abstract

The utility model discloses a film thickness measuring device. According to the embodiment of the utility model, the thin film thickness measuring device comprises a working table, a plurality of thin films and a plurality of light sources, wherein the working table is used for supporting an irradiation object on which a plurality of thin films are sequentially arranged along a first direction on a substrate; a first optical member that irradiates a first incident light toward an irradiation object in a direction opposite to the first direction, and receives a first reflected light reflected from the irradiation object; a second optical member including a light generating portion that irradiates a second incident light toward the irradiation object in a second direction crossing the first direction, and a light receiving portion that receives a second reflected light reflected from the irradiation object; and an arithmetic processing unit that calculates the thickness of each of the plurality of films on the basis of the first reflected light and the second reflected light.

Description

Technical Field

[0001] The present invention relates to a thin film thickness measuring device. Background Technology

[0002] A thin film is a layer of very thin thickness formed on the surface of a substrate. These thin films can be used to construct components for various electronic devices. In this case, to ensure the components function correctly, a detailed understanding of the thin film's thickness, composition, electrical properties, and optical properties is required. Especially recently, with the miniaturization and integration of components in electronic devices, techniques for accurately measuring the properties of these thin films have become increasingly important.

[0003] Typically, a dummy thin film made of the same material as the actual thin film is formed on the outermost edge of a substrate that does not function as a component. The characteristics of the thin film constituting the actual component are indirectly determined by measuring the characteristics of this dummy thin film.

[0004] The above description is only used to help understand the technical concept of this utility model and is therefore not to be construed as prior art known to those skilled in the art. Utility Model Content

[0005] One objective of this invention is to provide a thin film thickness measuring device capable of measuring the thickness of a thin film that functions as a component in an electronic device.

[0006] However, the technical problems of this utility model are not limited to those mentioned above, and those skilled in the art will clearly understand from the following description other technical problems not mentioned.

[0007] To achieve an objective of this utility model, a thin film thickness measuring device according to an embodiment of this utility model may include: a worktable for supporting an object to be irradiated, on which a plurality of thin films are sequentially arranged along a first direction on a substrate; a first optical component for irradiating the object with first incident light in the opposite direction to the first direction and receiving first reflected light reflected from the object; a second optical component including a light generating unit and a light receiving unit, wherein the light generating unit irradiates the object with second incident light in the direction intersecting the first direction along a second direction, and the light receiving unit receives the second reflected light reflected from the object; and a processing unit for calculating the thickness of each of the plurality of thin films based on the first and second reflected light.

[0008] In one embodiment, multiple thin films may be arranged in the light-emitting area of ​​the display device.

[0009] In one embodiment, multiple thin films may be arranged between the anode electrode and the cathode electrode of the display device.

[0010] In one embodiment, the substrate may be a silicon wafer.

[0011] In one embodiment, the worktable can reciprocate along a first direction, a third direction intersecting the first and second directions, and a fourth direction intersecting the third direction.

[0012] In one embodiment, the light receiving unit is configured to tilt at a constant distance from the point where the second incident light is reflected from the irradiated object as second reflected light, so that the light receiving unit can receive scattered light scattered from the irradiated object at the tilted position.

[0013] In one embodiment, the computational processing unit may be configured to model the thickness of the multiple thin films using rigorous coupled-wave analysis (RCWA).

[0014] In one embodiment, the computational processing unit can calculate the reflection coefficient of each of the plurality of thin films based on the polarization state change of each of the first reflected light and the second reflected light.

[0015] In one embodiment, the computational processing unit can calculate the thickness of each of the plurality of thin films based on the polarization state change of each of the first and second reflected light and the reflection coefficient of each of the plurality of thin films.

[0016] In one embodiment, the thin film thickness measuring device may further include: a chamber providing an internal space for arranging the worktable, the first optical component, and the second optical component.

[0017] In one embodiment, the thin film thickness measuring device may further include an atmospheric adjustment unit connected to the interior space of the chamber to change the atmospheric conditions of the interior space.

[0018] In one embodiment, the first optical component may include: a first light source for generating first incident light; a first photometer for changing the polarization state of the first incident light; a light splitter for reflecting a portion of the first incident light passing through the first photometer as reference light and transmitting another portion as transmitted light; a first polarization section for changing the polarization state of the transmitted light; an objective lens for focusing the transmitted light passing through the first polarization section and illuminating an object to be irradiated; and a first detection section for receiving the reference light and a first reflected light reflected from the object to be irradiated, wherein the first reflected light, after being reflected from the object to be irradiated, is sequentially guided to the first detection section by passing through the objective lens, the first polarization section, the light splitter, and the first photometer.

[0019] In one embodiment, the atmosphere control unit may include: a gas supply unit for supplying gas to the interior space; and an exhaust pump for discharging interior air from the interior space to the outside.

[0020] In one embodiment, when calculating the thickness of each of the multiple thin films, the computational processing unit can correct the first reflected light based on a reference light.

[0021] In one embodiment, the first optical component is movable along a first direction and the opposite direction of the first direction. The first detection unit may be configured to collect back focal length change information as the first optical component moves. The back focal length change information is the degree to which the back focal length of the first reflected light formed on the downstream side of the objective lens in the optical path changes. The computational processing unit may be configured to sense the interface of multiple thin films based on the back focal length change information.

[0022] In one embodiment, the light generating unit may include: a second light source for generating second incident light; a second polarization unit for changing the polarization state of the second incident light; and a light compensation unit for correcting the optical path of the second incident light passing through the second polarization unit and guiding the second incident light to the irradiated object. The light receiving unit may include: a second photometer for changing the polarization state of the second reflected light; and a second detection unit for receiving the second reflected light passing through the second photometer.

[0023] In one embodiment, the first incident light and the second incident light can be either ultraviolet light or visible light.

[0024] To achieve another objective of this utility model, a thin film thickness measurement method according to an embodiment of this utility model may include the following steps: placing an object to be irradiated, on which a plurality of thin films are sequentially arranged along a first direction on a substrate, on a worktable; irradiating the object with a first incident light in the opposite direction to the first direction, and receiving a first reflected light reflected from the object; irradiating the object with a second incident light in a second direction intersecting the first direction, and receiving a second reflected light reflected from the object; and calculating the thickness of each of the plurality of thin films based on the first and second reflected light.

[0025] In one embodiment, in the step of calculating the thickness of each of the multiple thin films, the reflectance coefficients of the multiple thin films can be calculated based on the polarization state changes of each of the first and second reflected light.

[0026] In one embodiment, the step of calculating the thickness of each of the plurality of thin films can be based on the polarization state change of each of the first and second reflected light and the reflection coefficient of each of the plurality of thin films.

[0027] The technical solutions of this utility model are not limited to the above-described technical solutions. Those skilled in the art to which this utility model pertains can clearly understand the technical solutions not mentioned from this specification and the accompanying drawings.

[0028] According to the embodiments of the present invention, the film thickness measuring device can directly measure the thickness of the film that actually functions as a component.

[0029] However, the effects of this utility model are not limited to the above-mentioned effects, and can be extended in various ways without departing from the idea and field of this utility model. Attached Figure Description

[0030] Figure 1 This is a conceptual diagram illustrating an embodiment of a thin film thickness measuring device.

[0031] Figure 2 It is shown Figure 1 A conceptual diagram showing the light receiving section of the second optical component, which can be tilted around the reflection point.

[0032] Figure 3 This is an example of an object to be illuminated, in which multiple thin films are stacked on a substrate, and is a plan view showing a portion of a display panel.

[0033] Figure 4 It is shown Figure 3 A plan view of an embodiment of any of the pixels shown.

[0034] Figure 5 It is shown that it includes Figure 4 A cross-sectional view of a portion of the thin film in any of the first to third luminescent regions shown.

[0035] Figure 6 It shows the use of Figure 1 The flowchart shows a method for measuring film thickness using a film thickness measuring device.

[0036] Figures 7 to 9 It is shown in sequence. Figure 8 A conceptual diagram of a thin film thickness measurement method is shown.

[0037] Explanation of reference numerals in the attached figures

[0038] 10: Thin film thickness measuring device

[0039] BFL: Back focal length

[0040] SG: Workbench

[0041] OM2: Second optical component

[0042] TM: Irradiated object

[0043] EL2: Second incident light

[0044] SUB: Substrate

[0045] LGP: Light Generation Unit

[0046] TF: Thin Film

[0047] LS2: Second light source

[0048] OM1: First optical component

[0049] PO2: Second polarization part

[0050] EL1: First incident light

[0051] CS: Optical Compensation Department

[0052] RFL: Reference Light

[0053] LRP: Optical Receiver

[0054] PL: Transmitted light

[0055] AN2: Second photometer

[0056] RL1: First reflected light

[0057] DE2: Second Inspection Department

[0058] LS1: First Light Source

[0059] RP: Reflection point

[0060] AN1: First photometer

[0061] APU: Processing Unit

[0062] BS: Light Splitting Section

[0063] CH: Chamber

[0064] PO1: First polarization section

[0065] ACP: Atmospheric Regulation Department

[0066] OL: Objective lens

[0067] GSP: Gas Supply Department

[0068] DE1: First Testing Department

[0069] EP: Exhaust pump Detailed Implementation

[0070] Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings. It should be noted that in the following description, only the parts necessary for understanding the operation of the present invention will be described; other parts will be omitted to avoid obscuring the essence of the present invention. Furthermore, the present invention is not limited to the embodiments described herein and may be embodied in other forms. However, the embodiments described herein are provided to facilitate the implementation of the technical concept of the present invention by those skilled in the art.

[0071] Throughout this specification, when one part is "connected" to another, this includes not only "direct connection" but also "indirect connection" where other constituent elements are spaced apart. The terminology used herein is for illustrative purposes only and is not intended to limit the invention. For example, unless the context clearly indicates otherwise, singular expressions include plural expressions. Furthermore, when a part "includes" a constituent element, unless specifically stated otherwise, it means that other constituent elements may also be included, rather than excluding them. "At least one of X, Y, and Z" and "at least one selected from the group consisting of X, Y, and Z" refer to one X, one Y, one Z, or any combination of two or more of X, Y, and Z (e.g., XYZ, XYY, YZ, ZZ). Here, "and / or" includes all combinations of one or more of the corresponding constituent elements.

[0072] Here, although terms such as first, second, etc., may be used to describe various constituent elements, these terms are used to distinguish these constituent elements from other constituent elements. Therefore, without departing from the scope of the disclosure herein, a first constituent element may also refer to a second constituent element.

[0073] Spatially relative terms such as “below” and “above” are used for illustrative purposes, thereby illustrating, as shown in the figures, the relationship of one element or feature to other elements(s)(s). In addition to the spatially relative directions described in the figures, different orientations during use, operation, and / or manufacture are also intended to be included. For example, if the device shown in the figures is flipped, the orientation described as “below” other elements or features is “above” other elements or features. Thus, in one embodiment, the term “below” can include both above and below orientations. Furthermore, the device may face other orientations (e.g., rotated 90 degrees or in other orientations), and therefore, the spatially relative terms used herein can be interpreted accordingly.

[0074] Various embodiments are described with reference to the accompanying drawings, which schematically illustrate ideal embodiments. Therefore, the intended shape may vary depending on, for example, tolerances and / or manufacturing techniques. Consequently, the embodiments disclosed herein should not be construed as limited to the specific shapes shown, but rather as encompassing variations in shape, for example, due to manufacturing processes. Therefore, the shapes shown in the figures may not represent the actual shape of areas of the device, and this embodiment is not limited thereto.

[0075] Figure 1 This is a conceptual diagram illustrating an embodiment of a thin film thickness measuring device.

[0076] Reference Figure 1 The thin film thickness measuring device 10 may include a worktable SG, a first optical component OM1, a second optical component OM2, and a computing processing unit APU.

[0077] The worktable SG can support the object to be irradiated TM. The worktable SG can move back and forth along a first direction DR1, a second direction DR2 intersecting the first direction DR1, and a third direction DR3 intersecting the first direction DR1 and the second direction DR2. In other words, with the object to be irradiated TM arranged on the worktable SG, the worktable SG moves upward along the first direction DR1, downward along the opposite direction of the first direction DR1, and moves up, down, left, and right on the plane formed by the second direction DR2 and the third direction DR3.

[0078] The object to be irradiated, TM, is on the substrate SUB ( Figure 3 Multiple thin-film TFs are sequentially arranged along the first direction DR1. Figure 5 The specimen, for example, could be... Figure 3 The display panel DP shown is not limited to this. Regarding the object being illuminated TM, please refer to the following. Figures 3 to 5 Please provide a detailed explanation.

[0079] The first optical component OM1 can irradiate the object TM with the first incident light EL1 in the opposite direction to the first direction DR1, and receive the first reflected light RL1 reflected from the object TM.

[0080] The first optical component OM1 may include a first light source LS1, a first photometer AN1, a light splitter BS, a first polarizer PO1, an objective lens OL, and a first detection unit DE1.

[0081] The first light source LS1 can generate a first incident light EL1. The first incident light EL1 can be either ultraviolet ray or visible ray. The first light source LS1 can emit the first incident light EL1 in a direction opposite to the first direction DR1. For example, the first light source LS1 can emit the first incident light EL1 in a vertical direction toward the object TM being irradiated. In embodiments, the first light source LS1 can be a white light source such as a tungsten halogen lamp or a xenon discharge lamp, or a monochromatic light source such as a laser. When using a laser, the first light source LS1 can emit a pre-polarized laser.

[0082] The first photometer AN1 can be arranged downstream of the first light source LS in the optical path of the first incident light EL1 emitted from the first light source LS1. The first photometer AN1 can change the polarization state of the first incident light EL1.

[0083] The light splitter BS can be arranged downstream of the first photometer AN1 in the optical path of the first incident light EL1. The light splitter BS can reflect a portion of the first incident light EL1 passing through the first photometer AN1 as reference light RFL, and can transmit another portion as transmitted light PL. The reference light RFL reflected from the light splitter BS can be deflected from the direction toward the object TM being irradiated, and can be guided along the first direction DR1, and the transmitted light PL of the light splitter BS can continue to be guided in the direction toward the object TM being irradiated.

[0084] Here, the reference light RFL is the light in the state of the first incident light EL1 before it is reflected by the irradiated object TM. It can be used as a reference when the computational processing unit APU calculates the optical characteristics of the first reflected light RL1, as described later. This will be described below.

[0085] The first polarizing section PO1 can be arranged downstream of the optical splitter BS in the optical path of the first incident light EL1. The first polarizing section PO1 can change the polarization state of the transmitted light PL passing through the optical splitter BS.

[0086] The objective lens OL can be arranged downstream of the first polarizing section PO1 in the optical path of the first incident light EL1. The objective lens OL can focus the transmitted light PL passing through the first polarizing section PO1 to illuminate the object TM. In other words, the objective lens OL can adjust the focal point of the transmitted light PL so that the transmitted light PL is focused at the desired position on the object TM.

[0087] The first detection unit DE1 can receive the reference light RFL reflected from the light splitter BS and the first reflected light RL1 reflected from the irradiated object TM. The first detection unit DE1 can be a charge-coupled device (CCD), but the embodiments are not limited to this. For example, the first detection unit DE1 may also include a spectrometer that splits the transmitted light PL and the first reflected light RL1 according to wavelength. In the embodiments, the first detection unit DE1 may be configured to convert optical information such as the polarization state, intensity, and phase contrast of each of the reference light RFL and the first reflected light RL1 into electrical signals, and can transmit these electrical signals to the arithmetic processing unit APU described later.

[0088] As implied above, in the optical path of the first incident light EL1, the first light source LS1, the first photometer AN1, the optical divider BS, the first polarizer PO1, and the objective lens OL can be arranged sequentially. In other words, the first incident light EL1 emitted from the first light source LS1 can sequentially pass through the first photometer AN1, the optical divider BS, the first polarizer PO1, and the objective lens OL to illuminate the object TM.

[0089] Furthermore, in the optical path of the first reflected light RL1, the objective lens OL, the first polarization section PO1, the light splitter BS, the first photometer AN1, and the first detection section DE1 can be arranged sequentially. In other words, the first reflected light RL1 can be guided to the first detection section DE1 after being reflected by the irradiated object TM, passing sequentially through the objective lens OL, the first polarization section PO1, the light splitter BS, and the first photometer AN1.

[0090] As described above, the first optical component OM1, which includes a first light source LS1, a first photometer AN1, a light splitter BS, a first polarizer PO1, an objective lens OL, and a first detection unit DE1, can be configured to extend along a first direction DR1 and move in the opposite direction to the first direction DR1.

[0091] As the first optical component OM1 moves along the first direction DR1 and in the opposite direction of the first direction DR1, the first detection unit DE1 can collect back focal length (BFL) change information and convert it into an electrical signal. The back focal length (BFL) change information is the degree of change in the back focal length (BFL) of the first reflected light RL1 formed downstream of the objective lens OL in the optical path of the first reflected light RL1. The first detection unit DE1 can transmit the collected back focal length change information to the computational processing unit APU (described later).

[0092] The second optical component OM2 includes: a light generating unit LGP, which irradiates the object TM with a second incident light EL2 in a direction that intersects the first direction DR1 to the third direction DR3; and a light receiving unit LRP, which receives the second reflected light RL2 reflected from the object TM.

[0093] The light generation unit LGP may include a second light source LS2, a second polarization unit PO2, and a light compensation unit CS.

[0094] The second light source LS2 can generate a second incident light EL2. The second incident light EL2 is the same as the first incident light EL1 and can be either ultraviolet or visible light. The second light source LS2 can emit the second incident light EL2 in a direction intersecting the first direction DR1 to the third direction DR3. For example, the second light source LS2 can emit the second incident light EL2 in a direction inclined relative to the object being illuminated TM. Here, "inclined direction" can refer to the direction in which the normal extends relative to the plane with the widest area (i.e., the upper surface) of the object being illuminated TM (e.g., the first direction DR1), and the direction in which the second direction DR2 and the third direction DR3 all intersect the plane with the widest area constituting the object being illuminated TM. In embodiments, similar to the first light source LS1, the second light source LS2 can be a white light source such as a halogen tungsten lamp or a xenon discharge lamp, or a monochromatic light source such as a laser. In the case of using a laser, the second light source LS2 can emit a pre-polarized laser.

[0095] The second polarization unit PO2 can be arranged downstream of the second light source LS2 in the optical path of the second incident light EL2. The second polarization unit PO2 can change the polarization state of the second incident light EL2 emitted from the second light source LS2.

[0096] The optical compensation unit CS corrects the optical path of the second incident light EL2 passing through the second polarization unit PO2 and guides the second incident light EL2 to the object TM to be irradiated. In an embodiment, the optical compensation unit CS may be configured as a compensator to correct the path of the light incident on the optical compensation unit CS, but is not limited thereto.

[0097] The light receiving unit LRP may include a second photometer AN2 and a second detection unit DE2.

[0098] The second photometer AN2 can be arranged downstream of the irradiated object TM in the optical path of the second reflected light RL2 reflected from the irradiated object TM. In other words, the second reflected light RL2 is the light reflected from the irradiated object TM by the second incident light EL2. Therefore, the second photometer AN2 can be arranged downstream of the optical compensation unit CS in the optical path of the second incident light EL2 and the second reflected light RL2. The second photometer AN2 can change the polarization state of the second reflected light RL2.

[0099] The second detection unit DE2 can receive the second reflected light RL2 passing through the second photometer AN2. Similar to the first detection unit DE1, the second detection unit DE2 can be a charge-coupled device (CCD), but the embodiments are not limited thereto. For example, the second detection unit DE2 may also include a beam splitter that splits the second reflected light RL2 according to wavelength. In an embodiment, the second detection unit DE2 may be configured to convert optical information such as the polarization state, intensity, and phase difference of the second reflected light RL2 into electrical signals, and can transmit these electrical signals to the arithmetic processing unit APU described later.

[0100] The light receiver LRP can move while maintaining a constant distance from the point where the second incident light EL2 is reflected by the object TM into the second reflected light RL2. This will be referred to... Figure 2 Please provide a detailed explanation.

[0101] The computational processing unit (APU) can be electrically connected to the first optical component OM1 and the second optical component OM2. The APU can receive electrical signals related to the optical characteristics of each of the reference light RFL and the first reflected light RL1 from the first detection unit DE1 of the first optical component OM1, and can receive electrical signals related to the optical characteristics of the second reflected light RL2 from the second detection unit DE2 of the second optical component OM2. In an embodiment, the APU can calculate the substrate SUB (substrate SUB) stacked on the irradiated object TM based on the first reflected light RL1, the reference light RFL, and the second reflected light RL2. Figure 3 ) thin film TF ( Figure 5 Each of their respective thicknesses.

[0102] As described above, the electrical signals of the first reflected light RL1, the reference light RFL, and the second reflected light RL2 collected from the computing unit APU can be information about the polarization state, intensity, and phase difference of each of the first reflected light RL1, the reference light RFL, and the second reflected light RL2.

[0103] In an embodiment, the computational processing unit (APU) may be configured to perform calculations on a substrate SUB sequentially arranged on the object to be irradiated (TM). Figure 3 Multiple thin film TFs on ) Figure 5When calculating the thickness of each of the thin films TF, modeling is performed using rigorous coupled-wave analysis (RCWA). For example, the arithmetic processing unit (APU) can input information about the polarization state, intensity, and phase difference of each of the first reflected light RL1, the reference light RFL, and the second reflected light RL2 into the RCWA model to calculate the reflection coefficient, refractive index, and attenuation coefficient of each thin film TF, thereby calculating the thickness of each thin film TF. At this time, when calculating the thickness of each thin film TF, the APU can correct the electrical signal of the first reflected light RL1 based on the reference light RFL.

[0104] Furthermore, the computational processing unit (APU) can sense the interface of the thin film TF based on the aforementioned back focal length (BFL) change information. At this time, as the first optical component OM1 moves along the first direction DR1 and in the direction opposite to DR1, the focal point of the transmitted light PL also moves along the first direction DR1 and in the direction opposite to DR1, thereby allowing the focal point of the transmitted light PL to pass through the interface of the thin film TF. Thus, when the focal point of the transmitted light PL passes through the interface of the thin film TF, the back focal length (BFL) of the first reflected light RL1 changes, and the computational processing unit (APU) can sense the interface of the thin film TF based on these changes in back focal length (BFL).

[0105] In addition, the thin film thickness measuring device 10 may also include a chamber CH and an atmospheric conditioning unit ACP.

[0106] The chamber CH provides an empty space for arranging the stage SG, the first optical component OM1, and the second optical component OM2. The computational processing unit (APU) is preferably located outside the chamber CH, but the embodiment is not limited thereto. For example, the APU may also be located in a sealed, separate space inside the chamber CH. However, for ease of explanation, the description will focus on the case where the APU is located outside the chamber CH.

[0107] The Atmospheric Control Unit (ACP) can be linked to the internal space of the chamber CH to change the atmospheric conditions inside. The Atmospheric Control Unit (ACP) may include a Gas Supply Unit (GSP) and an Exhaust Pump (EP).

[0108] The gas supply unit (GSP) can supply gas to the internal space of the chamber CH. In embodiments, the gas can be a purge gas. For example, the gas supply unit (GSP) can include an inert carrier gas such as nitrogen (N2). However, the embodiments are not limited to this, and the gas supply unit (GSP) can also supply inert gases such as argon (Ar), helium (He), or neon (Ne).

[0109] The exhaust pump EP can expel the indoor air present in the internal space of chamber CH to the outside. As described above, when the exhaust pump EP operates to expel the indoor air in chamber CH to the outside, the internal space of chamber CH can be converted into a vacuum state.

[0110] Although not shown in the accompanying drawings, a device or structure such as a gate valve that can open or close the flow path can be installed between the internal space of the chamber CH and the gas supply unit GSP and the exhaust pump EP, thereby enabling the flow to be regulated.

[0111] Figure 2 It is shown Figure 1 A conceptual diagram showing the light receiving section of the second optical component, which can be tilted around the reflection point.

[0112] Reference Figure 2 The light receiver LRP, with the reflection point RP where the second incident light EL2 is reflected from the irradiated object TM as the second reflected light RL2, can tilt while maintaining a constant distance r. In other words, as the light receiver LRP tilts around the reflection point RP, the first center C1, the second center C2, and the third center C3 of the light receiver LRP can be located on the circumference of a virtual circle CR with a radius equivalent to the constant distance r, centered on the reflection point RP.

[0113] In this embodiment, when the incident angle θ1 of the second incident light EL2 is the same as the exit angle θ2 of the second reflected light RL2, the first center C1 of the light receiver LRP can be located at a first position P1 on the circumference of the virtual circle CR. In this state, when the light receiver LRP tilts counterclockwise on the circumference of the virtual circle CR, the first center C1 of the light receiver LRP can move to a second position P2 where the second center C2 is located. Furthermore, when the light receiver LRP tilts clockwise on the circumference of the virtual circle CR, the first center C1 of the light receiver LRP can also move to a third position P3 where the third center C3 is located.

[0114] Thus, when the center of the light receiving unit LRP moves to the second position P2 or the third position P3 and the incident angle θ1 of the second incident light EL2 and the emission angle θ2 of the second reflected light RL2 move to different positions, the second detection unit DE2 can not only capture the second reflected light RL2 reflected from the irradiated object TM, but also capture the scattered light SL, which is light scattered from the irradiated object TM.

[0115] In this embodiment, similar to the second reflected light RL2, the second detection unit DE2 can convert optical information such as the polarization state, intensity, and phase difference of the scattered light SL into an electrical signal and transmit it to the computational processing unit APU. In this case, the computational processing unit APU can receive the electrical signal regarding the optical characteristics of the scattered light SL from the second detection unit DE2. Therefore, the computational processing unit APU can calculate the optical characteristics of the substrate SUB (substrate SUB) of the irradiated object TM based on the first reflected light RL1, the reference light RFL, the second reflected light RL2, and the scattered light SL. Figure 3 Thin film TF (stacked on) Figure 5 Each of their respective thicknesses.

[0116] As described above, the electrical signals collected by the computational processing unit (APU) of the first reflected light RL1, the reference light RFL, the second reflected light RL2, and the scattered light SL can be information about the polarization state, intensity, and phase difference of each of the first reflected light RL1, the reference light RFL, the second reflected light RL2, and the scattered light SL. In an embodiment, the calculation is performed on the substrate SUB (which is sequentially arranged on the object to be irradiated TM) Figure 3 Multiple thin film TFs on ) Figure 5 When calculating the thickness of each thin film TF, the computational processing unit (APU) can be configured to model using the RCWA method. For example, the APU inputs information about the polarization state, intensity, and phase difference of each of the first reflected light RL1, the reference light RFL, the second reflected light RL2, and the scattered light SL into the RCWA model, thereby calculating the reflection coefficient, refractive index, and attenuation coefficient of each thin film TF, and thus calculating the thickness of each thin film TF. At this time, when calculating the thickness of the thin film TF, the APU refers to... Figure 1 The electrical signal of the first reflected light RL1 can be corrected based on the reference light RFL.

[0117] The following is for reference Figure 3 , for as Figure 1 The display panel DP of an example of the irradiated object TM is described below.

[0118] Figure 3 This is an example of an object to be illuminated, in which multiple thin films are stacked on a substrate, and is a plan view showing a portion of a display panel.

[0119] Reference Figure 3 The display panel DP may include a display area DA and a non-display area NDA. The display panel DP displays the image through the display area DA. The non-display area NDA is arranged around the display area DA.

[0120] The display panel (DP) may include a substrate (SUB), sub-pixels (SP), and pads (PD).

[0121] When the display panel DP is used as a display screen for head-mounted displays (HMDs), virtual reality (VR) devices, mixed reality (MR) devices, augmented reality (AR) devices, etc., the display panel DP can be positioned very close to the user's eyes. In this case, sub-pixels SP with relatively high integration are required. To improve the integration of sub-pixels SP, the substrate SUB can be provided as a silicon wafer. The sub-pixels SP and / or the display panel DP can be formed on the substrate SUB, which is a silicon wafer. As described above, a display device (not shown) including a display panel DP formed on a substrate SUB, which is a silicon wafer, can be referred to as an organic light-emitting display device or an OLED-on-silicon (OLED-on-Silicon) display device.

[0122] Subpixels SP are arranged in the display area DA on the substrate SUB. The subpixels SP can be arranged in a matrix along the second direction DR2 and the third direction DR3 intersecting the second direction DR2, but the embodiment is not limited to this. For example, the subpixels SP can be arranged in a zigzag pattern along the second direction DR2 and the third direction DR3. Alternatively, the subpixels SP can be arranged in a pentiline pattern. ® Arrangement of shapes. Among them, the second direction DR2 can be the row direction, and the third direction DR3 can be the column direction.

[0123] Two or more sub-pixels in a plurality of sub-pixels SP can form a pixel PXL.

[0124] The components used to control the sub-pixel SP can be arranged in the non-display area NDA on the substrate SUB. For example, various components required to control and drive the sub-pixel SP (such as gate drivers, data drivers, voltage generators, controllers, temperature sensors, gate lines, and data lines) can be arranged in the non-display area NDA.

[0125] Furthermore, the pad PD can be disposed in the non-display area NDA of the substrate SUB. The pad PD can be electrically connected to the sub-pixel SP via wiring. For example, the pad PD can be connected to the sub-pixel SP via a data line.

[0126] In this embodiment, the display area DA can have various shapes. The display area DA can have a closed-loop shape that includes straight and / or curved edges. For example, the display area DA can have shapes such as polygons, circles, semicircles, and ellipses.

[0127] In one embodiment, the display panel DP may have a flat display surface. In other embodiments, the display panel DP may have at least partially rounded display surfaces. In another embodiment, the display panel DP may be bendable, foldable, or rollable. In this case, the display panel DP and / or the substrate SUB may comprise a material with flexible properties.

[0128] Figure 4 It is shown Figure 3 A plan view of an embodiment of any of the pixels shown.

[0129] exist Figure 4 For clarity and simplicity, the diagram is shown schematically. Figure 3 The image shows one pixel PXL within pixel PXL. The remaining pixels PXL can also be represented as shown. Figure 4 It is constructed in the same manner as shown.

[0130] Reference Figure 4 Pixel PXL may include first sub-pixel SP1 to third sub-pixel SP3.

[0131] The first sub-pixel SP1 may include a first light-emitting region EMA1 and a non-light-emitting region NEA surrounding the first light-emitting region EMA1. The second sub-pixel SP2 may include a second light-emitting region EMA2 and a non-light-emitting region NEA surrounding the second light-emitting region EMA2. The third sub-pixel SP3 may include a third light-emitting region EMA3 and a non-light-emitting region NEA surrounding the third light-emitting region EMA3.

[0132] The second sub-pixel SP2 and the third sub-pixel SP3 can be arranged along the second direction DR2. The first sub-pixel SP1 can be arranged in the opposite direction to the second sub-pixel SP2 and the third sub-pixel SP3, respectively, along the third direction DR3.

[0133] The first sub-pixel SP1 may have an area larger than the second sub-pixel SP2, and the third sub-pixel SP3 may have an area larger than the second sub-pixel SP2. Accordingly, the first light-emitting region EMA1 may have an area larger than the second light-emitting region EMA2, and the third light-emitting region EMA3 may have an area larger than the second light-emitting region EMA2; however, the embodiments are not limited to this. For example, the second sub-pixel SP2 and the third sub-pixel SP3 may have substantially the same area, and the first sub-pixel SP1 may have an area larger than both the second sub-pixel SP2 and the third sub-pixel SP3. As described above, the areas of the first sub-pixel SP1 to the third sub-pixel SP3 can be varied according to the embodiments.

[0134] Figure 5 It is shown that it includes Figure 4 A cross-sectional view of a portion of the thin film in any of the first to third luminescent regions shown.

[0135] exist Figure 5 For clarity and simplicity, the diagram is shown schematically. Figure 4 The diagram shows a partial cross-section of the display panel DP corresponding to the first light-emitting region EMA1, one of the first light-emitting regions EMA1 to the third light-emitting region EMA3. Although not shown in the diagram, another portion of the display panel DP corresponding to the remaining second and third light-emitting regions EMA2 and EMA3 can also be configured as shown. Figure 5 Same as shown.

[0136] Reference Figure 5 Multiple layers of thin film TF can be arranged between the anode electrode AE ​​and the cathode electrode CE of the display panel DP. These thin film TFs can be light-emitting structures that emit light of different colors from each other from the display panel DP.

[0137] The thin film TF can have a tandem structure in which the first light-emitting part EU1 to the third light-emitting part EU3 are stacked sequentially along the first direction DR1.

[0138] Each of the first light-emitting units EU1 to the third light-emitting units EU3 may include a light-emitting layer that generates light according to an applied current. The first light-emitting unit EU1 may include a first light-emitting layer EML1, a first electron transport unit ETU1, and a first hole transport unit HTU1. The first light-emitting layer EML1 may be disposed between the first electron transport unit ETU1 and the first hole transport unit HTU1. The second light-emitting unit EU2 may include a second light-emitting layer EML2, a second electron transport unit ETU2, and a second hole transport unit HTU2. The second light-emitting layer EML2 may be disposed between the second electron transport unit ETU2 and the second hole transport unit HTU2. The third light-emitting unit EU3 may include a third light-emitting layer EML3, a third electron transport unit ETU3, and a third hole transport unit HTU3. The third light-emitting layer EML3 may be disposed between the third electron transport unit ETU3 and the third hole transport unit HTU3.

[0139] Each of the first electron transport unit ETU1 to the third electron transport unit ETU3 may include at least one of an electron injection layer and an electron transport layer, and may further include an electron buffer layer and a hole blocking layer as needed. The first electron transport unit ETU1 to the third electron transport unit ETU3 may have the same or different configurations.

[0140] Each of the first hole transport unit HTU1 to the third hole transport unit HTU3 may include at least one of a hole injection layer and a hole transport layer, and may further include a hole buffer layer, an electron blocking layer, etc., as needed. The first hole transport unit HTU1 to the third hole transport unit HTU3 may have the same or different configurations.

[0141] The first charge generation layer CGL1 can be disposed between the first light-emitting part EU1 and the second light-emitting part EU2. Furthermore, the second charge generation layer CGL2 can be disposed between the second light-emitting part EU2 and the third light-emitting part EU3.

[0142] In one embodiment, the first emissive layer EML1 to the third emissive layer EML3 can generate light of different colors from each other. The light emitted from each of the first emissive layer EML1 to the third emissive layer EML3 can be mixed with each other and identified as white light. For example, the first emissive layer EML1 can generate blue light, the second emissive layer EML2 can generate green light, and the third emissive layer EML3 can generate red light. In other embodiments, two or more emissive layers of the first emissive layer EML1 to the third emissive layer EML3 can generate light of the same color. Figure 1 The thin film thickness measuring device 10 shown can measure the thickness of a film arranged in a reference plane. Figures 3 to 5 The thickness of multiple thin-film TFs in the light-emitting area of ​​the display device is described. For example... Figure 5As shown, the plurality of thin films TF can be multiple thin layers constituting a first hole transport section HTU1 to a third hole transport section HTU3, a first light-emitting layer EML1 to a third light-emitting layer EML3, a first electron transport section ETU1 to a third electron transport section ETU3, a first charge generation layer CGL1 and a second charge generation layer CGL2 arranged between the anode electrode AE ​​and the cathode electrode CE.

[0143] Reference Figures 3 to 5 The multiple thin-film TFs described can all be layers used as actual elements in a display panel (DP). (Refer to the reference...) Figure 1 and Figure 2 The thin film thickness measuring device 10 described herein can directly measure the thickness of each thin film TF that actually functions as an electronic component, even when the size of the substrate SUB is so small that space cannot be provided for forming a dummy thin film.

[0144] The following is for reference Figures 6 to 9 The thin film thickness measurement method according to the embodiment will be described in detail.

[0145] Figure 6 It shows the use of Figure 1 The flowchart shows a method for measuring film thickness using a film thickness measuring device. Figures 7 to 9 It is shown in sequence. Figure 8 A conceptual diagram of a thin film thickness measurement method is shown.

[0146] Reference Figure 6 ,use Figure 1 and Figure 2 The method for measuring film thickness using the film thickness measuring device 10 shown may include first step S1 to fourth step S4.

[0147] The following is based on Figure 6 Based on, refer to Figures 7 to 9 The method for measuring film thickness is explained in detail.

[0148] right Figures 7 to 9 Regarding the components of the thin film thickness measuring device 10 shown, unless otherwise stated, it may be configured as described above. Figure 1 and Figure 2 The components of the film thickness measuring device 10 described herein are identical, with the same reference numerals. Therefore, for ease of explanation, repeated descriptions are omitted below.

[0149] Reference Figure 7 The object to be irradiated, on which multiple thin film TFs are sequentially arranged along the first direction DR1 on the substrate SUB, is placed on the stage SG. Figure 6 (Step S1).

[0150] In this step, the exhaust pump EP can be activated to change the internal conditions of chamber CH to a vacuum. Alternatively, although not shown, the gas supply unit GSP can be activated to supply an inert purging gas such as nitrogen, argon, helium, or neon to the internal atmosphere of chamber CH, thereby changing the internal atmospheric conditions of chamber CH. In this way, the exhaust pump EP and the gas supply unit GSP can be operated in a suitable manner to achieve a specific, pre-set atmospheric condition inside chamber CH.

[0151] Reference Figure 8 The first incident light EL1 is irradiated toward the object TM in the opposite direction to the first direction DR1, and the first reflected light RL1 reflected from the object TM can be received. Figure 6 (S2 step).

[0152] In this step, the first detection unit DE1 can receive the reference light RFL reflected from the light splitter BS and the first reflected light RL1 reflected from the irradiated object TM. It converts the optical information, such as the polarization state, intensity, and phase difference of each of the reference light RFL and the first reflected light RL1, into electrical signals and transmits them to the arithmetic processing unit APU. Furthermore, the first detection unit DE1 can convert the back focal length (BFL) change information of the first reflected light RL1 into an electrical signal and transmit it to the arithmetic processing unit APU.

[0153] Reference Figure 9 The second incident light EL2 is irradiated toward the object TM along the direction intersecting the first direction DR1 to the third direction DR3, and the second reflected light RL2 reflected from the object TM can be received. Figure 6 (Step S3).

[0154] In this step, the second detection unit DE2 can receive the second reflected light RL2 reflected from the irradiated object TM and passing through the second photometer AN2, and convert the optical information such as the polarization state, intensity, and phase difference of the second reflected light RL2 into an electrical signal and transmit it to the computing unit APU. Furthermore, the light receiving unit LRP can also receive the scattered light SL tilted around the reflection point RP, and convert the optical information such as the polarization state, intensity, and phase difference of this scattered light SL into an electrical signal and transmit it to the computing unit APU.

[0155] Figure 8 and Figure 9 Steps S2 and S3, shown in the figure, can be executed sequentially as illustrated, but the embodiment is not limited to this. For example, steps S2 and S3 can also be performed simultaneously.

[0156] After steps S2 and S3 transmit the optical information of the first reflected light RL1 and the second reflected light RL2 to the computational processing unit (APU) in the form of electrical signals, the APU can calculate the thickness of each of the multiple thin films TF based on the first reflected light RL1 and the second reflected light RL2. Figure 6 (Step S4).

[0157] In this embodiment, the computational processing unit (APU) inputs information about the polarization state, intensity, and phase difference of each of the first reflected light RL1 and the second reflected light RL2 into the RCWA model, and calculates the reflection coefficient, refractive index, and attenuation coefficient of each of the multiple thin film TFs, thereby calculating the thickness of each of the multiple thin film TFs. Furthermore, the APU can sense the interface of the thin film TFs based on the electrical signal regarding the change in the back focal length (BFL) of the second reflected light RL2.

[0158] In this embodiment, the computational processing unit (APU) can further receive optical information such as the polarization state, intensity, and phase difference of each of the reference light RFL and the scattered light SL as electrical signals, and use them as additional input information for the RCWA model, thereby further improving the reliability of calculating the thickness of each of the multiple thin films TF. For example, when calculating the thickness of each of the multiple thin films TF, the computational processing unit (APU) can correct the electrical signal of the first reflected light RL1 based on the reference light RFL. Furthermore, when calculating the thickness of each of the multiple thin films TF, the computational processing unit (APU) can also correct the electrical signal of the second reflected light RL2 based on the scattered light SL.

[0159] According to reference Figures 6 to 9 The described thin film thickness measurement method enables direct measurement of the thickness of each thin film TF that actually functions as a component in an electronic device, even when the size of the substrate SUB is too small to provide space for forming a dummy thin film.

[0160] While specific embodiments and application examples have been described in this specification, it is obvious that other embodiments and modifications can be derived from the foregoing description. Therefore, the present invention is not limited to these embodiments, but may include the appended claims, various obvious modifications, and equivalents.

Claims

1. A thin film thickness measuring device, characterized in that, include: The worktable supports the object to be irradiated, on which multiple thin films are arranged sequentially along a first direction on a substrate. A first optical component irradiates a first incident light toward the object to be irradiated in the opposite direction to the first direction, and receives a first reflected light reflected from the object to be irradiated. The second optical component includes a light generating section and a light receiving section. The light generating section irradiates the object being irradiated with second incident light along a second direction intersecting the first direction, and the light receiving section receives second reflected light reflected from the object being irradiated. as well as The processing unit calculates the thickness of each of the plurality of films based on the first reflected light and the second reflected light.

2. The thin film thickness measuring device according to claim 1, characterized in that, The plurality of thin films are arranged in the light-emitting area of ​​the display device.

3. The thin film thickness measuring device according to claim 1, characterized in that, The plurality of thin films are arranged between the anode electrode and the cathode electrode of the display device.

4. The thin film thickness measuring device according to claim 1, characterized in that, The light receiving unit is configured to tilt while maintaining a constant distance from the point where the second incident light is reflected from the irradiated object as the second reflected light. The light receiving unit receives scattered light from the irradiated object at an inclined position.

5. The thin film thickness measuring device according to claim 1, characterized in that, Also includes: The chamber provides an internal space for arranging the worktable, the first optical component, and the second optical component.

6. The thin film thickness measuring device according to claim 5, characterized in that, Also includes: An atmospheric conditioning unit is connected to the interior space of the chamber to change the atmospheric conditions of the interior space.

7. The thin film thickness measuring device according to claim 1, characterized in that, The first optical component includes: The first light source generates the first incident light; The first photometric element changes the polarization state of the first incident light; The light splitting section reflects a portion of the first incident light passing through the first photometer as reference light and transmits another portion as transmitted light. The first polarization section changes the polarization state of the transmitted light; An objective lens that focuses the transmitted light passing through the first polarizing section and directs it onto the object being illuminated; and The first detection unit receives the reference light and the first reflected light reflected from the irradiated object. Wherein, after the first reflected light is reflected from the irradiated object, it is guided to the first detection unit by passing sequentially through the objective lens, the first polarizing part, the light splitting part, and the first photometer.

8. The thin film thickness measuring device according to claim 6, characterized in that, The atmospheric regulation unit includes: a gas supply unit for supplying gas to the internal space; and an exhaust pump for discharging internal air from the internal space to the outside.

9. The thin film thickness measuring device according to claim 7, characterized in that, The first optical component is capable of moving along the first direction and the opposite direction of the first direction. The first detection unit is configured to collect back focal length change information as the first optical component moves. The back focal length change information is the degree to which the back focal length of the first reflected light formed on the downstream side of the objective lens in the optical path changes. The computational processing unit is configured to sense the interface of the plurality of thin films based on the back focal length change information.

10. The thin film thickness measuring device according to claim 1, characterized in that, The light generating unit includes: The second light source generates the second incident light; The second polarization section changes the polarization state of the second incident light; and The optical compensation unit corrects the optical path of the second incident light passing through the second polarization unit and guides the second incident light to the object being irradiated. The optical receiver includes: The second photometer changes the polarization state of the second reflected light; and The second detection unit receives the second reflected light passing through the second photometer.

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