Micro OLED device structure and display equipment

By using a filter lens layer and a partition structure in Micro OLED devices, the problem of brightness loss caused by color filters is solved, achieving efficient light energy utilization and high color purity, thus improving the display effect.

CN224250121UActive Publication Date: 2026-05-15ZHEJIANG HONGXI TECH CO LTD
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Utility models(China)
Current Assignee / Owner
ZHEJIANG HONGXI TECH CO LTD
Filing Date
2025-07-29
Publication Date
2026-05-15

AI Technical Summary

Technical Problem

In traditional Micro OLED devices, the low transmittance of the color filter leads to a significant loss in overall brightness and low light energy utilization.

Method used

A filter lens layer is used instead of a traditional color filter layer. A quantum dot filter lens is used and a partition structure is set up. Red and green light are converted through the principle of photoluminescence, and the light is focused on the pixel photosensitive area.

Benefits of technology

It improves light energy utilization to over 70%, increases brightness by 80%, improves color purity by 58%, and reduces device power by 40%.

✦ Generated by Eureka AI based on patent content.

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Abstract

The utility model provides a Micro OLED device structure and a display device, and relates to the technical field of OLEDs. The organic light emitting layer is arranged on the anode; the cathode is arranged on the organic light emitting layer; and the light filtering lens layer is arranged on the cathode, and the light filtering lens layer comprises a plurality of quantum dot light filtering lenses. The filter lens layer is arranged to replace a traditional color filter layer and a lens, so that the problem of overall brightness loss caused by the color filter and the lens is solved.
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Description

Technical Field

[0001] This utility model relates to the field of OLED technology, specifically to the structure and display device of Micro OLED devices. Background Technology

[0002] Micro OLED is a micro-display device that combines semiconductors and OLEDs. It uses monocrystalline silicon as a substrate and integrates CMOS driving circuits, and has many advantages such as high pixel density, high contrast, and fast response time.

[0003] For example, patent CN120076639A discloses an application of a truncated pyramid lens, a silicon-based OLED display device, and a fabrication method. It includes a complementary metal-oxide-semiconductor substrate, an anode, an organic light-emitting layer, a cathode, an encapsulation layer, a color filter, and a truncated pyramid lens stacked sequentially. The truncated pyramid lens has hemispherical curved sides and a flat top. The hemispherical curved surfaces are used to collect light, and the flat surface is used to ensure uniform light output. This ensures that the brightness does not decrease with the increase of the viewing angle within a specified viewing angle range (±20°~±60°), and the brightness remains constant, thereby improving viewing angle stability.

[0004] However, the current traditional Micro OLED uses a white OLED (WOLED) combined with a color filter (CF). The filter has low light transmittance, about 20%-30%, resulting in an overall brightness loss of 60%-70%.

[0005] Therefore, there is an urgent need to develop Micro OLED device structures and display devices to solve the problems in existing technologies. Utility Model Content

[0006] The purpose of this invention is to provide a Micro OLED device structure and display device, which replaces the traditional color filter layer with a filter lens layer to form a lens morphology, thereby solving the problem of overall brightness loss caused by the application of color filters and lenses mentioned in the background art.

[0007] To achieve the above objectives, this utility model provides the following technical solution:

[0008] A Micro OLED device structure, characterized in that it comprises:

[0009] anode;

[0010] An organic light-emitting layer is disposed on the anode;

[0011] Cathode, wherein the cathode is disposed on the organic light-emitting layer;

[0012] A filter lens layer is disposed on the cathode, and the filter lens layer includes a plurality of quantum dot filter lenses.

[0013] Furthermore, the thickness of the filter lens layer is 2µm-10µm.

[0014] Furthermore, the organic light-emitting layer is a blue light-emitting layer, and the filter lens layer includes a red quantum dot lens, a green quantum dot lens, and a colorless quantum dot lens.

[0015] Furthermore, a partition structure is provided between adjacent quantum dot filter lenses.

[0016] Furthermore, the partition structure is made of black glue.

[0017] Furthermore, the height of the black adhesive is 1 / 3 to 2 / 3 of the height of the quantum dot filter lens.

[0018] Furthermore, it also includes:

[0019] A drive backplate, wherein the anode is disposed on the drive backplate.

[0020] Furthermore, it also includes: an encapsulation layer disposed on the filter lens layer;

[0021] A liquid adhesive layer is disposed on the encapsulation layer.

[0022] Furthermore, it also includes a cover plate layer disposed on the liquid adhesive layer.

[0023] A display device comprising the Micro OLED device structure described above.

[0024] Compared with the prior art, the beneficial effects of this utility model are:

[0025] (1) This application replaces the traditional color filter layer with a filter lens layer to form a lens morphology. It achieves red and green light conversion through photoluminescence, avoids light absorption loss from the filter, and concentrates the light on the opening of the pixel photosensitive area, so that more light can be received by the pixel, thereby improving the photoelectric conversion efficiency. Compared with the combination of color filter layer and lens in traditional Micro OLED devices, the light energy utilization rate of this application is increased from 30% to over 70%.

[0026] (2) This application uses black glue with a height of 1 / 3 to 2 / 3 of the height of the quantum dot filter lens as a partition structure between adjacent quantum dot filter lenses to prevent light from entering adjacent pixels, thereby reducing the half-width of the quantum dot spectrum and achieving a half-width of the quantum dot spectrum of <30nm. The color purity is improved by 58% compared with the traditional solution.

[0027] Other features and advantages of this utility model will be disclosed in detail in the following specific embodiments and accompanying drawings. Attached Figure Description

[0028] Figure 1 This is a schematic diagram of the overall structure of this application;

[0029] Figure 2 This is a schematic diagram of the structure of the anode in this application;

[0030] Figure 3 This is a schematic diagram of the structure of the filter lens layer in this application;

[0031] Figure 4 This is a schematic diagram of the structure of the encapsulation layer, liquid adhesive layer and cover layer of this application.

[0032] The markings in the diagram are as follows: 1. Drive backplate; 2. Anode; 3. Organic light-emitting layer; 4. Cathode; 51. Red quantum dot lens; 52. Green quantum dot lens; 53. Colorless quantum dot lens; 54. Partition structure; 6. Encapsulation layer; 7. Liquid adhesive layer; 8. Cover plate layer. Detailed Implementation

[0033] The technical solutions of the present invention will be clearly and completely described below with reference to the accompanying drawings of the embodiments of the present invention.

[0034] A Micro OLED device structure, such as Figure 1 As shown, it includes:

[0035] Anode 2;

[0036] An organic light-emitting layer 3 is disposed on the anode 2;

[0037] Cathode 4, wherein the cathode 4 is disposed on the organic light-emitting layer 3;

[0038] A filter lens layer is disposed on the cathode 4, and the filter lens layer includes a plurality of quantum dot filter lenses.

[0039] The thickness of the filter lens layer is 2µm-10µm. The quantum dot filter lens is formed by processes such as photolithography, inkjet printing, laser transfer, development and baking to correct the morphology, or nanoimprinting. Specifically, the structure of the quantum dot filter lens can be achieved by existing technologies, which will not be described in detail in this application.

[0040] In this embodiment, the organic light-emitting layer 3 is a blue light-emitting layer with a wavelength of 400nm-460nm. The filter lens layer includes a red quantum dot lens 51, a green quantum dot lens 52, and a colorless quantum dot lens 53 to form red, green, and blue light. The red quantum dot lens 51 and the green quantum dot lens 52 are made of materials such as CdSe and InP, and are patterned using inkjet printing or photolithography, directly covering the blue light-emitting layer. Specifically, the shape of the quantum dot filter lens is set as needed, which is prior art and will not be described further in this application.

[0041] This application uses a blue OLED to excite a quantum dot layer, achieving red and green light conversion through photoluminescence, avoiding light absorption loss from filters. The quantum dot layer has a light conversion efficiency (PLQY) >90%, and the overall brightness can reach 1.5 to 2 times that of traditional solutions.

[0042] Meanwhile, by constructing a microlens array using several quantum dot filter lenses, the direction of light propagation is changed, focusing the originally scattered light onto the front, making better use of the light in the effective direction, thereby increasing brightness and improving photoelectric conversion efficiency with the same power consumption.

[0043] In summary, this application improves the light energy utilization rate from 30% to over 70% by replacing the traditional color filter layer (CF) with a filter lens layer and forming a lens morphology. Under the same brightness, the device power can be reduced by 40%.

[0044] A partition structure 54 is provided between adjacent quantum dot filter lenses to isolate sub-pixels, prevent light from entering adjacent pixels, avoid mutual interference of light signals between different pixels, and improve image quality.

[0045] The partition structure 54 is made of black glue.

[0046] The height of the black adhesive is 1 / 3 to 2 / 3 of the height of the quantum dot filter lens.

[0047] After applying the partition structure 54 of this application, the half-width of the quantum dot spectrum is <30nm, and the color purity is improved by 58% compared with the traditional solution.

[0048] Also includes:

[0049] Encapsulation layer 6 (TFE), the encapsulation layer 6 being disposed on the filter lens layer;

[0050] Liquid adhesive layer 7 (OCR) is disposed on the encapsulation layer 6.

[0051] It also includes: a cover plate layer 8 (CG), which is disposed on the liquid adhesive layer 7.

[0052] In this embodiment, the encapsulation layer 6 is a low-temperature curing encapsulation layer 6 to avoid thermal damage to the quantum dot material.

[0053] It also includes a driving backplane 1, with the anode 2 disposed on the driving backplane 1 and electrically connected to the circuitry on the driving backplane 1. In this embodiment, the driving backplane 1 includes a silicon substrate and a CMOS driving circuit disposed in the silicon substrate.

[0054] Display devices, used in micro-display fields such as AR / VR, medical imaging, and automotive HUD, including the aforementioned MicroOLED device structure.

[0055] The materials of the CG layer include high-hardness materials such as glass, sapphire, and silicon carbide, or lightweight organic materials such as resin and polycarbonate.

[0056] The performance data for this embodiment is shown in Table 1 below.

[0057] Table 1: Performance data comparison table.

[0058]

[0059] It can be seen that, compared with the structure using a color filter layer and a lens, the peak brightness of this application is increased by 80%, the color gamut is increased by 29%, the red pixel half-width is reduced by 30%, and the green pixel half-width is reduced by 44%.

[0060] A method for manufacturing a Micro OLED device structure, such as Figures 2 to 4 As shown, it includes the following steps:

[0061] A blue OLED structure is deposited on a silicon substrate, wherein the blue OLED structure includes a metal anode 2, an organic light-emitting layer 3, and a semi-transparent cathode 4;

[0062] Photolithography is used to create black vinyl barriers between pixels to avoid color crosstalk between sub-pixels.

[0063] Using inkjet printing or laser transfer technology, red quantum dot lenses 51 and green quantum dot lenses are precisely coated or transferred in pixel-level areas, and highly transparent colorless quantum dot lenses 53 are formed on blue light pixels.

[0064] In a vacuum environment, the silicon substrate coated with quantum dot lenses is transferred to the equipment process chamber to deposit an enhanced encapsulation layer 6 such as alumina and silicon nitride, and thermal damage to the quantum dot material is avoided by a low-temperature curing process.

[0065] The encapsulation layer 6 is filled with OCR adhesive and the CG cover layer 8 is bonded together. Depending on the application, high-transparency, high-hardness or high-transparency, low-density materials are used for surface bonding to improve product performance.

[0066] This invention provides a Micro OLED device structure and display device, which is simple in structure, easy to use, and highly reliable.

[0067] Although this specification describes embodiments, not every embodiment contains only one independent technical solution. This narrative style is merely for clarity. Those skilled in the art should consider the specification as a whole. The technical solutions in each embodiment can also be appropriately combined to form other embodiments that can be understood by those skilled in the art.

Claims

1. A Micro OLED device structure, characterized in that, include: anode; An organic light-emitting layer is disposed on the anode; Cathode, wherein the cathode is disposed on the organic light-emitting layer; A filter lens layer is disposed on the cathode, and the filter lens layer includes a plurality of quantum dot filter lenses.

2. The Micro OLED device structure according to claim 1, characterized in that, The thickness of the filter lens layer is 0.2um-10um.

3. The Micro OLED device structure according to claim 2, characterized in that, The organic light-emitting layer is a blue light-emitting layer, and the filter lens layer includes a red quantum dot lens, a green quantum dot lens, and a colorless quantum dot lens.

4. The Micro OLED device structure according to any one of claims 1-3, characterized in that, A partition structure is set between adjacent quantum dot filter lenses.

5. The Micro OLED device structure according to claim 4, characterized in that, The partition structure is made of black vinyl.

6. The Micro OLED device structure according to claim 5, characterized in that, The height of the black adhesive is 1 / 3 to 2 / 3 of the height of the quantum dot filter lens.

7. The Micro OLED device structure according to any one of claims 1-3 or 5 or 6, characterized in that, Also includes: A drive backplate, wherein the anode is disposed on the drive backplate.

8. The Micro OLED device structure according to claim 7, characterized in that, Also includes: An encapsulation layer is disposed on the filter lens layer; A liquid adhesive layer is disposed on the encapsulation layer.

9. The Micro OLED device structure according to claim 8, characterized in that, Also includes: A cover plate layer is disposed on the liquid adhesive layer.

10. A display device, characterized in that, Includes the Micro OLED device structure as described in any one of claims 1-9.