Dual polarized antenna and phased array antenna array

Abstract

The application relates to a dual-polarized antenna and a phased array antenna array, the dual-polarized antenna comprising first to fifth dielectric substrates arranged in a stack and a double-feed probe, wherein a surface of the first dielectric substrate is provided with four patch units which are centrally symmetrical, a radiation patch coaxial with the patch units is arranged on the surface of the second dielectric substrate close to the first substrate, a first I-shaped slot and a second I-shaped slot which are crosswise perpendicular and centrally symmetrical are arranged on the surface of the third dielectric substrate close to the second substrate, a plurality of first metallized through holes are arranged around the third dielectric substrate, the slots are coaxial with the patch units, a first T-shaped and a second T-shaped microstrip feed line which are not in contact with each other are arranged on the fourth dielectric substrate, a plurality of second metallized through holes which are in one-to-one correspondence with the first through holes are arranged around the fourth dielectric substrate, and the feed lines correspond to the I-shaped slots respectively, two feed holes and a plurality of metal columns are arranged on the fifth dielectric substrate, and the double-feed probe is connected to feed points of the first T-shaped and the second T-shaped microstrip feed line through the feed holes. The dual-polarized antenna can improve port isolation and a wide-angle scanning range.

Description

Technical Field

[0001] This application relates to the field of antenna technology, and in particular to a dual-polarized antenna and a phased array antenna array. Background Technology

[0002] In recent years, dual-polarized antenna arrays have attracted considerable research attention due to their ability to provide enhanced target information, superior anti-jamming performance in radar systems, and increased channel capacity for communication systems, surpassing the capabilities of traditional single-polarized antenna arrays.

[0003] However, existing dual-polarized antennas suffer from problems such as low two-dimensional scanning performance and low port isolation. Utility Model Content

[0004] Therefore, it is necessary to provide a dual-polarized antenna and a phased array antenna array.

[0005] In a first aspect, this application provides a dual-polarized antenna, which includes a first dielectric substrate, a second dielectric substrate, a third dielectric substrate, a fourth dielectric substrate, a fifth dielectric substrate, and a dual-feed probe stacked together, wherein...

[0006] Four patch units are provided on a surface of the first dielectric substrate that is away from the second dielectric substrate, and are arranged in a centrally symmetrical manner.

[0007] A radiating patch is disposed on one surface of the second dielectric substrate near the first dielectric substrate, and the radiating patch is coaxially disposed with the four patch units.

[0008] The third dielectric substrate has a first I-shaped slot and a second I-shaped slot arranged perpendicularly to each other and centrally symmetrically on one surface near the second dielectric substrate, and a plurality of first metallized vias arranged around the first I-shaped slot and the second I-shaped slot. The first I-shaped slot and the second I-shaped slot are coaxially arranged with the four patch cells.

[0009] The fourth dielectric substrate is provided with a first T-shaped microstrip feed line and a second T-shaped microstrip feed line that intersect each other but do not contact each other, and a plurality of second metallized vias disposed around the first T-shaped microstrip feed line and the second T-shaped microstrip feed line, wherein the plurality of second metallized vias correspond one-to-one with the plurality of first metallized vias; the first T-shaped microstrip feed line corresponds to the first I-shaped slot, and the second T-shaped microstrip feed line corresponds to the second I-shaped slot;

[0010] The fifth dielectric substrate is provided with two power feed holes and multiple metal pillars, with the multiple metal pillars passing through the first metallized via and the second metallized via one by one.

[0011] The dual-feed probe is connected to the feed points of the first T-shaped microstrip feed line and the second T-shaped microstrip feed line respectively through two feed holes.

[0012] In one embodiment, each patch unit includes a cross-shaped patch and an orifice-shaped parasitic patch surrounding the cross-shaped patch.

[0013] In one embodiment, the radiating patch is a ring-shaped patch.

[0014] In one embodiment, the radiating patch is a cross-shaped patch.

[0015] In one embodiment, the fourth dielectric substrate is provided with a feed line metal via, the first T-shaped microstrip feed line is provided on a surface of the fourth dielectric substrate near the third dielectric substrate, the portion of the second T-shaped microstrip feed line intersecting with the first T-shaped microstrip feed line is provided on a surface of the fourth dielectric substrate near the fifth dielectric substrate through the feed line metal via, and the remaining portion of the second T-shaped microstrip feed line, excluding the portion intersecting with the first T-shaped microstrip feed line, is provided on a surface of the fourth dielectric substrate near the third dielectric substrate.

[0016] In one embodiment, the length of the middle gap between the first I-shaped gap and the second I-shaped gap is greater than the length of the gaps on both sides.

[0017] In one embodiment, a straight slit is provided at intervals along the extension direction of the middle slit of the first I-shaped slit and the second I-shaped slit, and the distance between the proximal end of the multiple straight slits and the nearest I-shaped slit is equal.

[0018] In one embodiment, the first dielectric substrate, the second dielectric substrate, the third dielectric substrate, the fourth dielectric substrate, and the fifth dielectric substrate are square dielectric substrates with aligned outer edges.

[0019] In one embodiment, the third dielectric substrate and the fourth dielectric substrate have the same thickness, the fifth dielectric substrate has a greater thickness than the fourth dielectric substrate, the second dielectric substrate has a greater thickness than the fifth dielectric substrate, and the first dielectric substrate has a greater thickness than the second dielectric substrate.

[0020] Secondly, this application also provides a phased array antenna array, which includes multiple dual-polarized antennas as described in the above embodiments, and the multiple dual-polarized antennas are arranged in an array.

[0021] The aforementioned dual-polarized antenna and phased array antenna array have at least the following beneficial effects:

[0022] By setting a decoupling surface with parasitic patches on the first dielectric substrate to block the coupling path between array elements, using I-shaped gaps and metallized vias to form SIW resonant cavities on the third to fifth dielectric substrates to limit lateral energy leakage and optimize impedance matching, and cross-isolating the T-shaped microstrip feed lines and independently exciting them through dual-feed probes, the coupling between dual-polarized antenna array elements is effectively suppressed. This systematically reduces near-field coupling and far-field mutual coupling between array elements, thereby breaking through the bottleneck of isolation reduction in traditional dual-polarized phased arrays during wide-angle scanning and significantly improving the wide-angle scanning performance and anti-interference capability of dual-polarized antennas. Attached Figure Description

[0023] To more clearly illustrate the technical solutions in the embodiments of this application or the conventional technology, the drawings used in the description of the embodiments or the conventional technology will be briefly introduced below. Obviously, the drawings described below are only some embodiments of this application. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0024] Figure 1 This is a schematic diagram of the structure of a dual-polarized antenna in one embodiment;

[0025] Figure 2 This is a schematic diagram of the patch unit structure in one embodiment;

[0026] Figure 3 This is a schematic diagram of the structure of a radiation patch in one embodiment;

[0027] Figure 4 This is a schematic diagram of the structure of the radiation patch in another embodiment;

[0028] Figure 5 This is a schematic diagram showing the positions of the first I-shaped slot and the second I-shaped slot on the third dielectric substrate in one embodiment;

[0029] Figure 6 This is a schematic diagram showing the positions of the first T-shaped microstrip feed line and the second T-shaped microstrip feed line on the fourth dielectric substrate in one embodiment;

[0030] Figure 7 for Figure 6 An enlarged schematic diagram of the intersection of the first T-shaped microstrip feed line and the second T-shaped microstrip feed line;

[0031] Figure 8 This is a schematic diagram of the structure of the fifth dielectric substrate in one embodiment;

[0032] Figure 9 This is a schematic diagram of the electric field distribution at 16 GHz when the I-shaped cross gap is excited at the X-pol port in one embodiment.

[0033] Figure 10 Here is a diagram of the S-parameters of a dual-polarized antenna in one embodiment;

[0034] Figure 11 This is a gain diagram of a dual-polarized antenna at 16Hz in one embodiment;

[0035] Figure 12 This is a schematic diagram of the port isolation of a dual-polarized antenna in the E-plane scanning range of 0~60° in one embodiment;

[0036] Figure 13 This is a schematic diagram of the port isolation of a dual-polarized antenna in the H-plane scanning range of 0~60° in one embodiment;

[0037] Figure 14 This is a schematic diagram of the active standing wave ratio of a dual-polarized antenna in the E-plane scanning range of 0~60° in one embodiment;

[0038] Figure 15 This is a schematic diagram of the active standing wave ratio of a dual-polarized antenna in the H-plane scanning range of 0~60° in one embodiment;

[0039] Figure 16 This is a schematic diagram of the scanning results of the E-plane from 0 to 60° when the Px port of an 8×8 planar array CST simulation model is excited at 16 GHz, according to one embodiment.

[0040] Figure 17 This is a schematic diagram of the H-plane scanning results from 0 to 60° when the Px port of an 8×8 planar array CST simulation model is excited at 16 GHz, according to one embodiment.

[0041] Figure 18 This is a schematic diagram of the scanning results of the E-plane from 0 to 60° when the 8×8 planar array CST simulation model is excited by the Py port at 16 GHz in one embodiment.

[0042] Figure 19 This is a schematic diagram showing the scanning results of the H-plane from 0 to 60° when the 8×8 planar array CST simulation model is excited at the Py port at 16 GHz in one embodiment. Detailed Implementation

[0043] To facilitate understanding of this application, a more complete description will be provided below with reference to the accompanying drawings, which illustrate embodiments of the present application. However, the present application can be implemented in many different forms and is not limited to the embodiments described herein. Rather, these embodiments are provided so that the disclosure of this application will be thorough and complete.

[0044] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this application belongs. The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the application.

[0045] It is understood that the terms "first," "second," etc., used herein may be used to describe various elements, but these elements are not limited by these terms. These terms are only used to distinguish one element from another. For example, without departing from the scope of this application, a first resistor may be referred to as a second resistor, and similarly, a second resistor may be referred to as a first resistor. Both the first resistor and the second resistor are resistors, but they are not the same resistor.

[0046] It is understood that the term "connection" in the following embodiments should be understood as "electrical connection," "communication connection," etc., if the connected circuits, modules, units, etc., have electrical signal or data transmission with each other.

[0047] It is understandable that "at least one" refers to one or more, and "multiple" refers to two or more. "At least a part of an element" refers to part or all of an element.

[0048] When used herein, the singular forms of "one," "an," and "the" may also include the plural forms unless the context clearly indicates otherwise. It should also be understood that terms such as "comprising / including" or "having" specify the presence of the stated features, integrals, steps, operations, components, parts, or combinations thereof, but do not preclude the possibility of the presence or addition of one or more other features, integrals, steps, operations, components, parts, or combinations thereof. Meanwhile, the term "and / or" as used in this specification includes any and all combinations of the associated listed items.

[0049] In one exemplary embodiment, such as Figure 1As shown, this application provides a dual-polarized antenna, which includes a first dielectric substrate 2, a second dielectric substrate 4, a third dielectric substrate 6, a fourth dielectric substrate 8, a fifth dielectric substrate 10, and a dual-feed probe 12 stacked together. The first dielectric substrate 2 has four patch units 22 arranged in a centrally symmetrical manner on its surface away from the second dielectric substrate 4. The second dielectric substrate 4 has a radiating patch 42 on its surface near the first dielectric substrate 2, and the radiating patch 42 is coaxially arranged with the four patch units 22. The third dielectric substrate 6 has a first I-shaped slot 62 and a second I-shaped slot 64 arranged in a centrally symmetrical manner and perpendicular to each other on its surface near the second dielectric substrate 4, and a plurality of first metallized vias 66 disposed around the first I-shaped slots 62 and the second I-shaped slots 64. The first I-shaped slots 62 and the second I-shaped slots 64 are connected to the first dielectric substrate 4. Four patch units 22 are coaxially arranged; the fourth dielectric substrate 8 is provided with a first T-shaped microstrip feed line 82 and a second T-shaped microstrip feed line 84 that intersect each other but do not contact each other, and a plurality of second metallized vias 86 disposed around the first T-shaped microstrip feed line 82 and the second T-shaped microstrip feed line 84, and the plurality of second metallized vias 86 correspond one-to-one with the plurality of first metallized vias 66; the first T-shaped microstrip feed line 82 corresponds to the first I-shaped slot 62, and the second T-shaped microstrip feed line 84 corresponds to the second I-shaped slot 64; the fifth dielectric substrate 10 is provided with two feed holes 102 and a plurality of metal pillars 104, and the plurality of metal pillars 104 pass through the first metallized vias 66 and the second metallized vias 86 one-to-one; the dual feed probes 12 are connected to the feed points of the first T-shaped microstrip feed line 82 and the second T-shaped microstrip feed line 84 respectively through the two feed holes 102.

[0050] For example, a decoupling surface is formed by four centrally symmetrical patch units 22 on a surface of the first dielectric substrate 2 away from the second dielectric substrate 4. Each patch unit 22 can be composed of a central patch and peripheral parasitic patches. Based on the peripheral parasitic patches, the electromagnetic field distribution between units can be changed, which is equivalent to an electromagnetic barrier, blocking the direct coupling path between adjacent units. The radiating patch 42 on the second dielectric substrate 4 is coaxially arranged with the four patch units 22, which can enhance the energy convergence in the main polarization direction and suppress the leakage of cross-polarization components. Based on the above decoupling surface and radiating structure, not only can the mutual coupling strength between adjacent array elements be significantly reduced, but the port isolation can also be improved during wide-angle scanning, and the low-frequency bandwidth can be extended to ensure that the dual-polarization port maintains low coupling characteristics. By setting intersecting perpendicular first I-shaped slots 62 and second I-shaped slots 64 on the third dielectric substrate 6, and arranging first metallized vias 66 around them, and by setting first T-shaped microstrip feed lines 82 and second T-shaped microstrip feed lines 84 on the fourth dielectric substrate 8, and simultaneously arranging second metallized vias 86 around them, corresponding one-to-one with the first metallized vias 66 on the third dielectric substrate 6, a substrate integrated waveguide (SIW) resonant cavity is formed. Metal pillars 104 on the fifth dielectric substrate 10 pass through the aforementioned second metallized vias 86 and first metallized vias 66, connecting the layers to form a complete conductive wall, further enhancing the electromagnetic shielding effect of the resonant cavity. In the substrate integrated waveguide (SIW) resonant cavity constructed as described above, when the electromagnetic waves from the first T-shaped microstrip feed line 82 and the second T-shaped microstrip feed line 84 are coupled to the radiating patch 42 through the first I-shaped slot 62 and the second I-shaped slot 64, the SIW resonant cavity, through the "virtual wall" formed by the metal via array, confines the energy transmission in the vertical direction, reducing leakage to the sides and thus reducing lateral coupling between array elements. Moreover, the I-shaped slot has a wider impedance bandwidth than the traditional straight slot, which, combined with the low-loss characteristics of the SIW structure, ensures efficient energy transmission and reduces coupling caused by reflection. Secondly, the first T-shaped microstrip feed line 82 and the second T-shaped microstrip feed line 84 cross but do not touch, physically isolating the two feed lines and avoiding direct electromagnetic coupling; while the dual-feed probe 12 is connected to the feed points of the two sets of T-shaped feed lines respectively, ensuring that the excitation signals of the X-pol and Y-pol ports are independent of each other and avoiding crosstalk between polarization ports. In addition, based on the above symmetrical and coaxial designs, the radiation characteristics of the two polarization ports are almost identical, avoiding the introduction of additional coupling due to differences in port performance.

[0051] The aforementioned dual-polarized antenna achieves effective suppression of inter-element coupling by setting a decoupling surface with parasitic patches on the first dielectric substrate 2 to block the coupling path between array elements, using I-shaped gaps and metallized vias to form SIW resonant cavities on the third to fifth dielectric substrates 6 to 10 to limit lateral energy leakage and optimize impedance matching, and cross-isolating the T-shaped microstrip feed lines and independently exciting them through dual-feed probes 12. This systematically reduces near-field coupling and far-field mutual coupling between array elements, thereby breaking through the bottleneck of reduced isolation in traditional dual-polarized phased arrays during wide-angle scanning and significantly improving the wide-angle scanning performance and anti-interference capability of the dual-polarized antenna.

[0052] In one exemplary embodiment, such as Figure 2 As shown, each patch unit 22 includes a cross-shaped patch 222 and an orifice-shaped parasitic patch 224 surrounding the cross-shaped patch 222.

[0053] For example, the cross-shaped patch 222 of each patch unit 22 is disposed in the center, and the apex-shaped parasitic patch 224 is disposed around it. The apex-shaped parasitic patch 224 serves to reduce the coupling between antenna elements and extend the low-frequency bandwidth.

[0054] In this embodiment, the cross-shaped patch 222 is located in the center as the main radiating element, while the outer aperture-shaped parasitic patch 224 forms an electromagnetic barrier by altering the electromagnetic field distribution, blocking the direct coupling path between adjacent elements and effectively reducing coupling between antenna elements. Simultaneously, the structural design of the aperture-shaped parasitic patch 224 expands the low-frequency bandwidth, improving the antenna's performance in the low-frequency band. This combined design, while ensuring radiation efficiency, significantly reduces mutual coupling interference and improves low-frequency response, achieving an effective combination of antenna miniaturization and wideband characteristics, thus enhancing the overall stability and applicability of the dual-polarized antenna.

[0055] In one exemplary embodiment, such as Figure 3 As shown, the radiating patch 42 is a ring-shaped patch 422.

[0056] In this embodiment, as Figure 3 As shown, the radiating patch 42 is located at the center above the second dielectric substrate 4, and is a ring-shaped patch 422, wherein the inner ring radius is R. i The outer ring radius is R o By utilizing the structural characteristics of its inner and outer rings, it can efficiently couple the energy radiated from the slots on the third dielectric substrate 6, guiding the energy to the decoupled surface to achieve spatial radiation. This enhances the energy convergence and redistribution capabilities, optimizes the energy radiation path, and improves the overall radiation efficiency of the antenna. As a result, the antenna can make fuller use of energy and reduce energy loss during signal transmission and reception, thereby enhancing the signal coverage and transmission stability, and providing strong support for improving the performance of dual-polarized antennas.

[0057] In one exemplary embodiment, such as Figure 4 As shown, the radiation patch 42 is a cross-shaped patch 424.

[0058] In this embodiment, as Figure 4 As shown, the radiating patch 42 is located at the center above the second dielectric substrate. It is formed by overlapping two rectangular patches of size L3×W5 in a cross shape. This effectively captures and gathers the energy radiated from the gaps in the third dielectric substrate 6, and efficiently recouples this energy to the decoupling surface through the cross shape, achieving more precise and efficient spatial radiation. This optimizes the energy transmission path, enhances the coupling efficiency of energy inside the antenna, reduces energy loss, and significantly improves the antenna's radiation performance. This gives the antenna stronger signal propagation capability and stability during signal transmission and reception, providing key support for the high-performance of the dual-polarized antenna.

[0059] In one exemplary embodiment, such as Figure 5 As shown, the length of the middle gap of the first I-shaped gap 62 and the second I-shaped gap 64 is greater than the length of the gaps on both sides.

[0060] For example, such as Figure 5 As shown, two intersecting H-shaped slots are arranged in the center of the third dielectric substrate 6. Each slot is W6 wide. The length of the middle slot between the first H-shaped slot 62 and the second H-shaped slot 64 is L6, and the length of the two side slots is L5. Compared with the traditional straight slot, the H-shaped intersecting slot has a wider impedance matching. The length of the middle slot is greater than that of the side slots. The longer middle slot provides more flexible resonant frequency adjustment capability, which can generate resonance at lower frequencies and effectively expand the low-frequency bandwidth; the shorter side slots generate additional resonant points at high frequencies, further widening the operating frequency band. This asymmetric structure can also precisely control the electric field distribution by adjusting the length ratio of the middle and side slots, enhancing the response to specific polarization directions, suppressing cross-polarization components, and improving the polarization purity and pattern stability of the antenna. Figure 5 As shown, 28 metallized vias are provided around the I-shaped intersecting gaps.

[0061] In this embodiment, the I-shaped structure, with the central slot longer than the two side slots, not only broadens the impedance matching bandwidth but also forms a dual-resonance mechanism—the long central slot generates low-frequency resonance to extend the low-frequency response, while the short side slots introduce high-frequency resonance points to broaden the high-frequency band, effectively improving the operating bandwidth across the entire frequency band. By adjusting the length ratio of the central to the side slots, the electric field distribution can be precisely controlled, enhancing the radiation efficiency in specific polarization directions, suppressing cross-polarization interference, and significantly improving the antenna's polarization purity and pattern stability.

[0062] In one exemplary embodiment, such as Figure 5 As shown, in the extension direction of the middle gap of the first I-shaped gap 62 and the second I-shaped gap 64, there are intermittent straight gaps, and the distance between the proximal end of each straight gap and the nearest I-shaped gap is equal.

[0063] For example, such as Figure 5 As shown, the distance between the near end of the straight-line slot and the nearest I-shaped slot is W7. Multiple straight-line slots are arranged along the extension direction of the middle slot between the first I-shaped slot 62 and the second I-shaped slot 64, with their near ends equidistant from the I-shaped slots, which further optimizes the electromagnetic characteristics of the antenna. The straight-line slots can generate additional resonant points, which, in conjunction with the resonant characteristics of the I-shaped slots, broaden the antenna's operating bandwidth. Simultaneously, multiple straight-line slots fine-tune the electric field distribution, altering the electromagnetic coupling path between slots, reducing cross-polarization components, and improving the antenna's polarization isolation. Furthermore, these straight-line slots can optimize the surface current distribution, reducing antenna reflection loss and enhancing radiation efficiency, allowing the antenna to achieve more efficient and stable performance during signal transmission, effectively meeting the multiple requirements for antenna bandwidth, isolation, and radiation efficiency in complex communication scenarios.

[0064] In one exemplary embodiment, such as Figure 6 and Figure 7 As shown, the fourth dielectric substrate 8 is provided with a feed line metal via 88. The first T-shaped microstrip feed line 82 is provided on a surface of the fourth dielectric substrate 8 near the third dielectric substrate 6. The portion of the second T-shaped microstrip feed line 84 that intersects with the first T-shaped microstrip feed line 82 is provided on a surface of the fourth dielectric substrate 8 near the fifth dielectric substrate 10 through the feed line metal via 88. The remaining portion of the second T-shaped microstrip feed line 84, except for the portion that intersects with the first T-shaped microstrip feed line 82, is provided on a surface of the fourth dielectric substrate 8 near the third dielectric substrate 6 through the feed line metal via 88.

[0065] For example, such as Figure 6 and Figure 7As shown, the first T-shaped microstrip feed line 82 and the second T-shaped microstrip feed line 84 are intersected on the upper surface of the fourth dielectric substrate 8. The two polarized T-shaped feed lines are placed laterally, but at the intersection, there is a small cross-section that bypasses the lower surface of the fourth dielectric substrate 8, avoiding contact between the two feed lines and ensuring their independence. The short side width of the T-shaped microstrip feed line is W8, and its length is L7; the long side width is W9, and its length is L8. The T-shaped microstrip feed line also has a feed point for connection with a feed probe, with a feed point radius of R1. There are 28 second metallized vias 86 around the T-shaped microstrip feed line, with a spacing of D between them. The SIW resonant cavity formed by the metallized vias on the third dielectric substrate 6 and the fourth dielectric substrate 8 can effectively reduce the side radiation of microstrip feed line energy, allowing most of the energy to be coupled to the radiating patch 42 of the second dielectric substrate 4 through the gaps on the third dielectric substrate 6, improving radiation efficiency while reducing coupling between antenna elements.

[0066] In this embodiment, feed metal vias 88 are used to achieve spatial separation of the first T-shaped microstrip feed line 82 and the second T-shaped microstrip feed line 84 at the intersection point. This ensures the independence of dual-polarization feeding and avoids direct electromagnetic coupling caused by traditional crossover designs, effectively reducing crosstalk between ports. The 28 second metallized vias 86 around the T-shaped microstrip feed line and the first metallized vias 66 of the third dielectric substrate 6 together constitute the SIW resonant cavity, forming a "virtual metal wall" that confines the feed line energy to vertical transmission, significantly reducing lateral radiation leakage. This not only improves the coupling efficiency of energy to the radiating patch 42 and enhances the antenna radiation performance, but also reduces mutual coupling strength by suppressing lateral electromagnetic interference between array elements.

[0067] In one exemplary embodiment, such as Figure 8 As shown, the first dielectric substrate 2, the second dielectric substrate 4, the third dielectric substrate 6, the fourth dielectric substrate 8, and the fifth dielectric substrate 10 are square dielectric substrates with aligned outer edges.

[0068] Among them, the fifth dielectric substrate 10 is a grounding substrate.

[0069] In this embodiment, the standardized geometric structure facilitates precise stacking and mechanical alignment of multilayer substrates, simplifies antenna processing and assembly, and reduces the risk of electromagnetic performance deviations caused by substrate misalignment. Secondly, the edge-aligned structure allows the metallized vias, gaps, feed lines, and other electromagnetic components of each layer to form a regular array distribution in the vertical direction, which is beneficial for constructing a symmetrical and uniform electromagnetic transmission path, ensuring the consistency of electric and magnetic field distribution, and improving the stability of the antenna radiation pattern. In addition, the neat square outline facilitates modular integration with other RF components or antenna arrays, enhancing the compatibility and scalability of the structure. At the same time, the compact shape design can effectively reduce the overall size of the antenna, meeting the requirements of modern communication equipment for miniaturization and lightweighting. Furthermore, the grounding substrate (fifth dielectric substrate 10) is aligned with the edges of other layers, which can form a complete reference ground plane, optimize the integrity of the grounding loop, reduce ground current interference, and improve the antenna's anti-interference capability and signal transmission reliability.

[0070] In one exemplary embodiment, the third dielectric substrate and the fourth dielectric substrate have the same thickness, the fifth dielectric substrate has a greater thickness than the fourth dielectric substrate, the second dielectric substrate has a greater thickness than the fifth dielectric substrate, and the first dielectric substrate has a greater thickness than the second dielectric substrate.

[0071] For example, in one specific embodiment, the thickness of the third dielectric substrate and the fourth dielectric substrate is 0.127 mm, the thickness of the fifth dielectric substrate is 0.25 mm, the thickness of the second dielectric substrate is 0.5 mm, and the thickness of the first dielectric substrate is 1.27 mm.

[0072] In this embodiment, the first dielectric substrate has the largest thickness, providing ample physical space for the decoupling surface (including patch units and parasitic structures), which facilitates the effective blocking of coupling paths between array elements and the expansion of low-frequency bandwidth through peripheral parasitic patches. The second dielectric substrate has the next largest thickness, supporting a stable layout of radiating patches (such as ring or cross-shaped structures), enhancing the main polarization energy convergence and secondary coupling efficiency, and suppressing cross-polarization leakage. The fifth dielectric substrate has a greater thickness than the third and fourth layers, providing sufficient mounting depth for the metal pillars and feed holes to ensure reliable connection with the lower metallized vias, forming a complete SIW resonance. The cavity conductive walls enhance electromagnetic shielding, while the thicker grounding substrate optimizes the reference ground plane and reduces ground current interference. The third and fourth dielectric substrates are of equal thickness and relatively thin, facilitating close near-field coupling between the I-shaped slot and the T-shaped microstrip feed line. Combined with the SIW resonant cavity formed by metallized vias, it effectively limits lateral energy leakage. At the same time, the thin substrate design reduces signal transmission loss and improves the electromagnetic coupling efficiency between the feed line and the slot. Through the differentiated design of the thickness of each layer, the structural stability and electromagnetic performance are systematically balanced, further enhancing the wide-angle scanning capability and anti-interference characteristics of the dual-polarized antenna.

[0073] In one exemplary embodiment, this application also provides a phased array antenna array, which includes multiple dual-polarized antennas as described in the above embodiments, and the multiple dual-polarized antennas are arranged in an array.

[0074] In this embodiment, each dual-polarized antenna achieves low mutual coupling, high isolation, and wide bandwidth characteristics through a decoupling surface, radiating patch, and substrate-integrated waveguide resonant cavity. When arranged in an array, it effectively improves the gain and directivity of the antenna array, enhancing signal coverage and strength. Precise control of the phase and amplitude of each dual-polarized antenna allows for flexible beam scanning, meeting signal transmission requirements in different directions and improving the flexibility and adaptability of the communication system. Simultaneously, the array arrangement inherits the low loss and high stability characteristics of a single dual-polarized antenna, reducing energy loss during signal transmission and improving the reliability and efficiency of the entire phased array antenna array. This provides strong technical support for fields with stringent antenna performance requirements, such as 5G and radar detection.

[0075] To describe the technical solution of this application in more detail, the following is combined with... Figures 1 to 19 For detailed description, taking the patch unit 22 on the first dielectric substrate 2 as being composed of cross-shaped patches 222 and orifice-shaped parasitic patches 224, and the radial patch 42 on the second dielectric substrate 4 being an annular patch 422 as an example, the detailed structure is as follows: Figure 1 As shown.

[0076] I. Structure of a dual-polarized antenna:

[0077] The dual-polarized antenna comprises five dielectric substrates, including a first dielectric substrate 2, which may be a PTFE F4B material of model F4BTME350; a second dielectric substrate 4, which may be a PTFE F4B material of model F4BME300; a third dielectric substrate 6; a fourth dielectric substrate 8; and a fifth dielectric substrate 10, all of which may be a PTFE F4B material of model F4BME217; and a copper cladding layer disposed on each dielectric substrate to form structures such as patch units, radiating patches, slots, microstrip feed lines, and metallized vias.

[0078] like Figure 1As shown, a decoupling surface layer consisting of four patch units 22, comprising cross-patterned patches 222 and orifice-shaped parasitic patches 224, is formed on the upper surface of the first dielectric substrate 2. A radial patch layer consisting of annular patches 422 is formed on the upper surface of the second dielectric substrate 4. A slot layer consisting of first I-shaped slots 62 and second I-shaped slots 64 intersecting is formed on the third dielectric substrate 6. A feed line layer consisting of first T-shaped microstrip feed lines 82 and second T-shaped microstrip feed lines 84 is formed on the fourth dielectric substrate 8. A metal pillar 104 is formed on the fifth dielectric substrate 10, and the lower surface of the fifth dielectric substrate 10 is grounded to form a ground layer. The reference coordinate direction is as follows: Figure 1 As shown in the image.

[0079] Specifically, refer to Figure 1 and Figure 2 The decoupling surface is designed with four identical patch elements 22 arranged in a square. Each patch element 22 has a cross-shaped patch 222 at its center, surrounded by an aperture-shaped parasitic patch 224. The aperture-shaped parasitic patch 224 serves to reduce coupling between antenna elements and improve low-frequency bandwidth.

[0080] Reference Figure 1 and Figure 3 The radiating patch 42 is located at the center of the upper surface of the second dielectric substrate and is a circular patch. The radiating patch 42 recouples the energy radiated from the gap layer to the decoupled surface space radiation.

[0081] Reference Figure 1 and Figure 5 The slot layer is located in the center of the upper surface of the third dielectric substrate, with two intersecting I-shaped slots (i.e., the first I-shaped slot 62 and the second I-shaped slot 64). Each slot is W6 wide, the middle slot is L6 long, and the two side slots are L5 long. Compared with the traditional straight slot, the I-shaped intersecting slot has a wider impedance matching. Among them, 28 first metallized vias 66 are formed around the I-shaped intersecting slot.

[0082] Reference Figure 1 , Figure 6 and Figure 7 The feed layer is located on the upper surface of the fourth dielectric substrate 8 and consists of two T-shaped microstrip feed lines (i.e., the first T-shaped microstrip feed line 82 and the second T-shaped microstrip feed line 84) placed horizontally in an intersecting manner. For example... Figure 6 and Figure 7As shown, the two polarized T-shaped microstrip feed lines are placed laterally, but at the intersection, there is a small cross-section that bypasses the lower surface of the dielectric substrate, avoiding contact between the two microstrip feed lines and ensuring their independence. The short side width of the T-shaped microstrip feed line is W8, and the length is L7; the long side width is W9, and the length is L8. The T-shaped microstrip feed line also has feed points for connecting feed probes, with a contact radius of R1. There are 28 second metallized vias 86 around the T-shaped microstrip feed line, with a spacing of D between them. The second metallized vias 86 correspond one-to-one with the first metallized vias 66 mentioned above. The SIW resonant cavity formed by the metallized vias can effectively reduce the energy radiation of the microstrip feed line to the side, allowing most of the energy to be coupled to the radiating patch layer 42 through the gaps in the slot layer, improving radiation efficiency while reducing coupling between antenna elements.

[0083] Reference Figure 1 and Figure 8 The fifth dielectric substrate 10 is provided with a plurality of metal pillars 104 corresponding one-to-one with the first metallized via 66 on the third dielectric substrate 6 and the second metallized via 86 on the fourth dielectric substrate 8. The fifth dielectric substrate 10 is also provided with two power feed holes 102, wherein the radius of the power feed hole 102 is R2, the distance between the center of the power feed hole 102 and the edge of the fifth dielectric substrate 10 is L9, and a ground layer is formed on the lower surface of the fifth dielectric substrate 10.

[0084] The dual-polarized antenna constructed from the above structure employs broadband feeding technology. Specifically, energy is fed to the T-shaped microstrip feed line via a coaxial cable, and then the electromagnetic waves on the T-shaped microstrip feed line are coupled to the radiating patch layer through the I-shaped cross slots in the slot layer. Figure 9 The electric field distribution at 16 GHz is shown when the I-shaped cross gap is excited at the X-pol port; it can be seen that the horizontal X direction is excited, while the vertical Y direction is almost unexcited.

[0085] II. Performance Simulation Analysis of Dual-Polarized Antennas:

[0086] Figure 10 and Figure 11 The simulation results are for the radiation boundary conditions. Figure 10 For S-parameter plots, Figure 11 This is a gain graph of the antenna at 16Hz. (Example:) Figure 7 and Figure 10 As shown, the dual-polarized antenna operates with a bandwidth of 15.6% (14.6~17.1GHz) at the X-pol port (Px) and 15% (14.5~16.9GHz) at the Y-pol port (Py), with an isolation greater than 33dB between the two ports within the operating bandwidth. Figure 11As shown, the radiation pattern of this unit at 16 GHz indicates that Px and Py excitations have almost identical radiation characteristics. Specifically, the main polarization radiation patterns are basically the same, and the cross-polarization level is below -36 dB.

[0087] The dual-polarized antenna designed in this application is intended for use in the Ku-band of phased array applications; therefore, the antenna's performance under periodic boundary conditions is of particular interest. Figure 12 and Figure 13 This shows the port isolation of the antenna under periodic boundary conditions at different beam scanning angles. For example... Figure 12 As shown, within the E-plane scanning range of 0–60°, the antenna achieves a port isolation exceeding 31 dB in the 14–18 GHz range. Figure 13 As shown, within the H-plane scanning range of 0–60°, the antenna port isolation is higher than 27 dB in the 14–18 GHz range. Furthermore, as... Figure 14 and Figure 15 As shown, within the scanning range of 0~60°, the active VSWR of the antenna is less than 3.

[0088] III. Simulation Analysis of Beam Scanning in an 8x8 Phased Array:

[0089] An 8×8 planar array CST simulation model was established to verify the beam scanning capability of the proposed phased array antenna array. To ensure no grating lobes during wide-angle scanning, the element spacing was set to 9 mm, and the antenna dimensions were 72×72×2.3 mm³.

[0090] In the CST model, a two-dimensional beam scanning simulation was performed by exciting a 16 GHz signal at the Px port and the Py port respectively to verify the beam scanning performance of the two ports.

[0091] Figure 16 and Figure 17 The results show the scanning results of the E-plane and H-plane from 0 to 60° when Px port is excited at 16 GHz. When scanning to 60°, the peak gain is 22.3 dBi, the sidelobe level (SLL) is < -10.2 dB, and no gate lobes appear. Figure 16 As shown, the gain drop in E-plane beam scanning is <3.6dB. (As...) Figure 17 As shown, the gain drop of H-plane beam scanning is <4dB.

[0092] Figure 18 and Figure 19 The results show the scanning results of the E-plane and H-plane from 0 to 60° when Py-port excited at 16 GHz. When scanning to 60°, the peak gain is 22 dBi, the sidelobe level is <-10.1 dB, and no gate lobes appear. Figure 18 As shown, the gain drop in E-plane beam scanning is <3.9dB. (As...) Figure 19As shown, the gain drop of H-plane beam scanning is <3.3dB.

[0093] The aforementioned dual-polarized antenna and phased array, based on the dual-polarized feeding method employed in the specific structural design, not only achieves a port isolation of 27 dB but also ensures that the performance of the two polarization ports is almost identical. Furthermore, the use of a SIW cavity structure and decoupling surfaces effectively reduces coupling between components, resulting in an active VSWR of less than 3 within the bandwidth. In addition, a two-dimensional wide-angle scanning range of ±60° can be achieved at both the X-pol and Y-pol ports.

[0094] In the description of this specification, references to terms such as "some embodiments," "other embodiments," etc., indicate that a specific feature, structure, material, or characteristic described in connection with that embodiment or example is included in at least one embodiment or example of this application. In this specification, the illustrative descriptions of the above terms do not necessarily refer to the same embodiments or examples.

[0095] The technical features of the above embodiments can be combined in any way. For the sake of brevity, not all possible combinations of the technical features in the above embodiments are described. However, as long as there is no contradiction in the combination of these technical features, they should be considered to be within the scope of this specification.

[0096] The embodiments described above are merely illustrative of several implementation methods of this application, and while the descriptions are specific and detailed, they should not be construed as limiting the scope of this application. It should be noted that those skilled in the art can make various modifications and improvements without departing from the concept of this application, and these modifications and improvements all fall within the protection scope of this application. Therefore, the protection scope of this application should be determined by the appended claims.

Claims

1. A dual-polarized antenna, characterized in that, The dual-polarized antenna includes a first dielectric substrate, a second dielectric substrate, a third dielectric substrate, a fourth dielectric substrate, a fifth dielectric substrate, and a dual-feed probe stacked together. Four patch units are provided on a surface of the first dielectric substrate that is away from the second dielectric substrate, arranged in a centrally symmetrical manner; A radiating patch is disposed on one surface of the second dielectric substrate near the first dielectric substrate, and the radiating patch is coaxially disposed with the four patch units; The third dielectric substrate has a first I-shaped slot and a second I-shaped slot arranged perpendicularly to each other and centrally symmetrically on one surface near the second dielectric substrate, and a plurality of first metallized vias disposed around the first I-shaped slot and the second I-shaped slot. The first I-shaped slot and the second I-shaped slot are coaxially arranged with the four patch units. The fourth dielectric substrate is provided with a first T-shaped microstrip feed line and a second T-shaped microstrip feed line that intersect each other but do not contact each other, and a plurality of second metallized vias disposed around the first T-shaped microstrip feed line and the second T-shaped microstrip feed line, wherein the plurality of second metallized vias correspond one-to-one with the plurality of first metallized vias; the first T-shaped microstrip feed line corresponds to the first I-shaped slot, and the second T-shaped microstrip feed line corresponds to the second I-shaped slot; The fifth dielectric substrate is provided with two power feed holes and multiple metal pillars, and the multiple metal pillars pass through the first metallized via and the second metallized via one by one; The dual-feed probe is connected to the feed points of the first T-shaped microstrip feed line and the second T-shaped microstrip feed line respectively through the two feed holes.

2. The dual-polarized antenna according to claim 1, characterized in that, Each of the patch units includes a cross-shaped patch and an orifice-shaped parasitic patch surrounding the cross-shaped patch.

3. The dual-polarized antenna according to claim 1, characterized in that, The radiation patch is a ring-shaped patch.

4. The dual-polarized antenna according to claim 1, characterized in that, The radiation patch is a cross-shaped patch.

5. The dual-polarized antenna according to claim 1, characterized in that, The fourth dielectric substrate is provided with a feed line metal via. The first T-shaped microstrip feed line is disposed on a surface of the fourth dielectric substrate near the third dielectric substrate. The portion of the second T-shaped microstrip feed line that intersects with the first T-shaped microstrip feed line is disposed on a surface of the fourth dielectric substrate near the fifth dielectric substrate through the feed line metal via. The remaining portion of the second T-shaped microstrip feed line, excluding the portion that intersects with the first T-shaped microstrip feed line, is disposed on a surface of the fourth dielectric substrate near the third dielectric substrate.

6. The dual-polarized antenna according to claim 1, characterized in that, The length of the middle gap in both the first I-shaped gap and the second I-shaped gap is greater than the length of the gaps on both sides.

7. The dual-polarized antenna according to claim 6, characterized in that, In the extension direction of the middle gap of the first I-shaped gap and the second I-shaped gap, there are intermittent straight gaps, and the distance between the proximal end of each of the multiple straight gaps and the nearest I-shaped gap is equal.

8. The dual-polarized antenna according to any one of claims 1-7, characterized in that, The first dielectric substrate, the second dielectric substrate, the third dielectric substrate, the fourth dielectric substrate, and the fifth dielectric substrate are square dielectric substrates with aligned outer edges.

9. The dual-polarized antenna according to claim 8, characterized in that, The third dielectric substrate and the fourth dielectric substrate have the same thickness, the fifth dielectric substrate has a greater thickness than the fourth dielectric substrate, the second dielectric substrate has a greater thickness than the fifth dielectric substrate, and the first dielectric substrate has a greater thickness than the second dielectric substrate.

10. A phased array antenna array, characterized in that, The phased array antenna array includes a plurality of dual-polarized antennas as described in any one of claims 1-9, and the plurality of dual-polarized antennas are arranged in an array.

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