A radiation detector
By using a flip-chip and vertical circuit board structure that couples a semiconductor optoelectronic device array with a scintillator array, the electronic complexity and miniaturization issues of radiation detectors as the number of channels increases are solved, achieving efficient signal transmission and processing, and improving the signal-to-noise ratio and heat dissipation performance of the detector.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- BEIJING HAMAMATSU PHOTON TECH INC
- Filing Date
- 2025-03-31
- Publication Date
- 2026-06-26
AI Technical Summary
Existing radiation detectors become increasingly electronically complex as the number of channels increases exponentially, and it is difficult to achieve miniaturization and good signal processing performance within a limited size range.
The system employs a semiconductor optoelectronic device array coupled with a scintillator array, and uses a flip-chip and vertical circuit board structure to process channel signals in sections. The vertical circuit board layout reduces signal transmission paths and improves response speed and signal-to-noise ratio.
It achieves efficient transmission and processing of signals with an exponentially increased number of channels within a limited space, reduces electronic complexity, improves the signal-to-noise ratio and heat dissipation of the detector, and meets the requirements of miniaturization design.
Smart Images
Figure CN224417040U_ABST
Abstract
Description
Technical Field
[0001] This utility model relates to the field of radiation detection, and in particular to a radiation detector. Background Technology
[0002] Radiation detectors typically consist of a scintillator, photoelectric sensors, and processing circuitry. They convert radiation (α, β, γ, X-rays, neutrons, etc.) into electrical signals, enabling radiation detection. Scintillators come in various types, including solid-state, liquid, and gaseous scintillators, as well as inorganic and organic scintillators. Photoelectric sensors generally include photomultiplier tubes (PMTs), phototubes, and semiconductor optoelectronic devices such as silicon photomultiplier tubes (SiPMs) and photodiodes (PDs).
[0003] Currently, scintillation detectors combining solid-state scintillators (SSDs) and photonic telescopes (PMTs) are relatively mature. SiPMs, however, are gaining increasing attention in radiation detection applications due to their advantages such as small size, high photon detection efficiency, low operating voltage, and insensitivity to magnetic fields. In some applications, they have largely replaced or are gradually replacing PMT-based scintillation detectors. Particularly in radiation imaging, SiPMs offer a significant size advantage, allowing them to be assembled into multi-channel arrays and matched with multi-channel array scintillators to create multi-channel scintillation detectors. In recent years, various types of scintillation detectors have been applied in nuclear medicine imaging, such as PET, SPECT, and gamma cameras.
[0004] In the field of radiation imaging, scintillation detectors typically have a large number of channels (e.g., 64). If each channel's data is read out individually, the electronic complexity and cost will be very high, and the circuit size will be large. Therefore, channel multiplexing is usually used to reduce circuit complexity. However, the applicant of this application has found that when the number of channels increases exponentially (e.g., 128, 256, etc.), the electronic complexity is even higher. Moreover, with the development of technology, the requirements for miniaturization of scintillation detectors are becoming increasingly stringent. How to achieve electronic readout and signal processing with an exponentially increasing number of channels within a limited size range, while obtaining good application performance, remains a major challenge in electronic and structural design. Summary of the Invention
[0005] Firstly, a radiation detector is provided, comprising:
[0006] Scintillator array;
[0007] A semiconductor optoelectronic device array, wherein the semiconductor optoelectronic device array is coupled to the scintillator array;
[0008] A flip chip board, wherein the semiconductor optoelectronic device array is soldered on the flip chip board, the flip chip board includes multiple regions, and each region is provided with a first signal connection device for outputting the semiconductor optoelectronic device array signal on that region;
[0009] At least two first circuit boards perpendicular to the flip-chip plate, each first circuit board corresponding to one or more of the regions, each first circuit board having a first end close to the flip-chip plate and a second end away from the flip-chip plate; each first end is provided with a second signal connection device for connecting to the corresponding first signal connection device and receiving the signal output by the first signal connection device; each second end is provided with a third signal connection device for outputting the signal processed by the first circuit board;
[0010] A second circuit board perpendicular to the at least two first circuit boards is provided on the second circuit board, and a fourth signal connection device is respectively provided on the second circuit board for each of the third signal connection devices, for receiving the signal output by the third signal connection device; a fifth signal connection device is also provided on the second circuit board for outputting the signal processed by the second circuit board.
[0011] Optionally, the semiconductor optoelectronic device array is soldered to the first surface of the flip chip, and the first signal connection device is disposed on the second surface of the flip chip, with the first surface and the second surface facing opposite directions.
[0012] Optionally, the inverted plate includes m columns and n rows of regions, where m is the number of regions of the inverted plate in the first direction, n is the number of regions of the inverted plate in the second direction, and m and n are integers greater than or equal to 1.
[0013] The at least two first circuit boards are arranged in parallel along the first direction, and the plane in which each first circuit board is located is parallel to the second direction;
[0014] Preferably, the m-column and n-row regions of the inverted plate are equally divided regions.
[0015] Optionally, the first signal connection device is provided at the same location in each of the areas;
[0016] Preferably, the first signal connection device is disposed at the center of each of the regions.
[0017] Optionally, for the regions located in the same column, two of the first circuit boards are respectively placed on both sides of the first signal connection device in the column region.
[0018] Optionally, the position of each second signal connection device on the first circuit board is set in a manner that connects it to the corresponding first signal connection device using the shortest distance.
[0019] Optionally, the fourth signal connection device is disposed on the third surface of the second circuit board, and the fifth signal connection device is disposed on the fourth surface of the second circuit board, wherein the third surface and the fourth surface face opposite directions;
[0020] The position of each of the fourth signal connection devices on the second circuit board is set in such a way that it is connected to the corresponding third signal connection device using the shortest distance.
[0021] Optionally, the first circuit board includes a position detection circuit;
[0022] The second circuit board includes a signal preprocessing circuit.
[0023] Optionally, the first signal connection device, the second signal connection device, the third signal connection device, the fourth signal connection device and / or the fifth signal connection device may include one or more connectors.
[0024] Optionally, the flip plate and the second circuit board are fixed together by studs.
[0025] In this embodiment, the semiconductor optoelectronic device array is partitioned. The channel signal of each region is transmitted to the corresponding first circuit board of the next layer through a separately arranged signal connection device within that region. This ensures the consistency of data transmission across all channels, and the transmission path for each channel is kept to a minimum, improving response speed. Furthermore, the first circuit board is vertically positioned between the flip-chip board and the second circuit board. Compared to the commonly used multi-layer circuit board stacking method, this not only saves space but also provides better heat dissipation. Additionally, the signal of each channel only needs to pass through two sets of signal connection devices and one first circuit board to reach the second circuit board for final signal processing, resulting in virtually no signal attenuation and improving the detector's signal-to-noise ratio. Moreover, this scheme has a compact structure, meeting miniaturization design requirements and fully utilizing the size advantages of semiconductor optoelectronic devices such as SiPMs, while easily handling exponentially increasing channel numbers. Attached Figure Description
[0026] Figure 1 This is a three-dimensional schematic diagram of a radiation detector provided in an embodiment of this application;
[0027] Figure 2 This is a front view schematic diagram of a radiation detector provided in an embodiment of this application;
[0028] Figure 3This is a perspective view of an inverted plate provided in an embodiment of this application;
[0029] Figure 4 This is a perspective view of a first circuit board provided in an embodiment of this application;
[0030] Figure 5 This is a perspective view of a second circuit board provided in an embodiment of this application;
[0031] Figure 6 This is a three-dimensional schematic diagram showing another radiation detector provided in an embodiment of this application;
[0032] Figure 7 This is a three-dimensional schematic diagram showing another radiation detector provided in an embodiment of this application;
[0033] Figure 8 This is a three-dimensional schematic diagram showing another radiation detector provided in an embodiment of this application;
[0034] Figure 9 This is a three-dimensional schematic diagram showing another radiation detector provided in an embodiment of this application;
[0035] Figure 10 This is a three-dimensional schematic diagram showing another radiation detector provided in an embodiment of this application. Detailed Implementation
[0036] The technical solutions of the embodiments of this application will be clearly described below with reference to the accompanying drawings. Obviously, the described embodiments are only some, not all, of the embodiments of this application. All other embodiments obtained by those skilled in the art based on the embodiments of this application are within the scope of protection of this application.
[0037] The terms "first," "second," etc., used in the specification and claims of this application are used to distinguish similar objects and not to describe a specific order or sequence. It should be understood that such use of data can be interchanged where appropriate so that embodiments of this application can be implemented in orders other than those illustrated or described herein, and the objects distinguished by "first" and "second" are generally of the same class, not limited in number; for example, a first object can be one or more. Furthermore, in the specification and claims, "and / or" indicates at least one of the connected objects, and the character " / " generally indicates that the preceding and following objects are in an "or" relationship.
[0038] The radiation detector provided in this application will be described in detail below with reference to the accompanying drawings, through some embodiments and application scenarios.
[0039] See Figure 1-10As shown, the radiation detector provided in this application embodiment includes: a scintillator array 1, a semiconductor optoelectronic device array 2, a flip-chip board 3, at least two first circuit boards 4 and a second circuit board 5.
[0040] Among them, the scintillators in the scintillator array 1 interact with the rays to generate scintillating light. The scintillators can be, for example, NaI, CsI, LaBr3, BGO, LYSO, RGBS, etc.
[0041] The semiconductor optoelectronic devices in the semiconductor optoelectronic device array 2 convert the flickering light into a charge signal. The semiconductor optoelectronic devices can be SiPM, PD, APD, CMOS, CCD, etc., and SiPM is preferred in the embodiments of this application.
[0042] The semiconductor optoelectronic device array 2 is coupled to the scintillator array 1.
[0043] The semiconductor optoelectronic device array 2 and the scintillator array 1 can be directly coupled or indirectly coupled through an optical medium (such as silicon gel, silicon resin, etc.).
[0044] In this application embodiment, the specific number of channels of the scintillator array 1 is not limited; for example, it can be 64, 128, or 256 channels. The shape of the scintillator array 1 is also not limited; for example, it can be a square or a rectangle.
[0045] The number of channels in the semiconductor optoelectronic device array 2 and the scintillator array 1 can be the same (e.g., one semiconductor optoelectronic device corresponds to one scintillator) or different (e.g., one semiconductor optoelectronic device corresponds to multiple scintillators, or multiple semiconductor optoelectronic devices correspond to one scintillator). The number of channels in the semiconductor optoelectronic device array 2 can be, for example, 64, 128, or 256 channels. The shape of the semiconductor optoelectronic device array 2 can be square, rectangular, etc.
[0046] In practical applications, semiconductor optoelectronic devices in array or single-channel configurations can be spliced together to obtain the aforementioned semiconductor optoelectronic device array 2. Taking a 256-channel SiPM as an example, the aforementioned semiconductor optoelectronic device array 2 can be obtained by splicing together 2*2 8*8 arrays or 16*16 single-channel SiPMs.
[0047] It should be noted that the overall size of the scintillator array 1 should match the overall size of the semiconductor optoelectronic device array 2 so that the scintillator's scintillator light signal can be better detected by the corresponding semiconductor optoelectronic device.
[0048] like Figure 2 , 3As shown, the semiconductor optoelectronic device array 2 is soldered onto the flip chip 3. The flip chip 3 includes multiple regions, and each region is provided with a first signal connection device 61 for outputting the semiconductor optoelectronic device array signal in that region.
[0049] Here, the flip-chip board 3 divides the semiconductor optoelectronic device array 2 into multiple regions, each region corresponding to a portion of the semiconductor optoelectronic device array. Each region is equipped with a separate first signal connection device 61, which enables the rapid transmission of the semiconductor optoelectronic device array signals in that region to the next circuit board. This not only ensures the consistency of data transmission across all channels but also guarantees that the transmission path for each channel is kept within a short distance, thus improving response speed. Taking a 256-channel flip-chip board comprising four regions as an example, each region corresponds to a 64-channel semiconductor optoelectronic device array, and the signals from all 64 channels in each region can be rapidly transmitted to the next circuit board through the first signal connection device 61 in that region.
[0050] like Figure 2 , 4 As shown, at least two first circuit boards 4 are perpendicular to the flip plate 3. Each first circuit board 4 corresponds to one or more regions. The first end of each first circuit board 4 is close to the flip plate 3, and the second end is far away from the flip plate 3. Each first end is provided with a second signal connection device 62 for connecting to the corresponding first signal connection device 61 and receiving the signal output by the first signal connection device 61. Each second end is provided with a third signal connection device 71 for outputting the signal processed by the first circuit board 4.
[0051] Here, the first circuit board 4 is perpendicular to the flip-chip 3, and one first circuit board 4 can correspond to one or more areas of the flip-chip 3. The first circuit board 4 is provided with a second signal connection device 62 connected to the first signal connection device 61 of the corresponding area to receive the array signal of the corresponding area, and a third signal connection device 71 is provided to output signals to the next circuit board. When one first circuit board 4 corresponds to multiple areas, a corresponding number of second signal connection devices 62 need to be provided on the first circuit board 4.
[0052] The response speed is fastest when one first circuit board 4 corresponds to one area. That is, the array signal on each area is transmitted to a separate first circuit board 4 for processing, which can reduce the amount of data on each first circuit board 4 and improve the response speed.
[0053] The first circuit board 4 may include a position detection circuit. The position detection circuit is mainly used to receive charge signals from different channels and use devices such as capacitors and resistors to convert the charge signals into analog pulse signals containing energy information and position information. In this process, the number of signal channels can be reduced (for example, reduced to 2, 3, 4, 5 channels, etc.). Subsequent circuits can then use the extracted analog pulse signals and algorithms to calculate information such as the position of the signal source.
[0054] like Figure 2 , 5 As shown, the second circuit board 5 is perpendicular to the at least two first circuit boards 4. The second circuit board 5 is provided with a fourth signal connection device 72 corresponding to each third signal connection device 71, which is used to receive the signal output by the third signal connection device 71. The second circuit board 5 is also provided with a fifth signal connection device 8, which is used to output the signal processed by the second circuit board 5.
[0055] Here, the second circuit board 5 is perpendicular to the first circuit board 4. The second circuit board 5 is provided with a fourth signal connection device 72 for each third signal connection device 71 to receive all the signals output by the first circuit board 4 for further processing, and a fifth signal connection device 8 is provided as the final signal output terminal.
[0056] The second circuit board 5 may include a signal preprocessing circuit. The signal preprocessing circuit is used to integrate, amplify, and shape the analog pulse signal to improve the signal-to-noise ratio and meet the processing requirements of subsequent circuits.
[0057] The radiation detector provided in this application embodiment divides the semiconductor optoelectronic device array 2 into sections. The channel signal of each section is transmitted to the corresponding first circuit board 4 on the next layer through a separately arranged signal connection device within that section. This ensures the consistency of data transmission across all channels, and the transmission path for each channel is kept to a minimum, improving response speed. Furthermore, the first circuit board 4 is vertically positioned between the flip-chip board 3 and the second circuit board 5. Compared to the commonly used multi-layer circuit board stacking method, this not only saves space but also provides better heat dissipation. Additionally, the signal from each channel only needs to pass through two sets of signal connection devices and one first circuit board 4 to reach the second circuit board 5 for final signal processing, resulting in virtually no signal attenuation and improving the detector's signal-to-noise ratio. Moreover, this scheme has a compact structure, meeting miniaturization design requirements and fully utilizing the size advantages of semiconductor optoelectronic devices such as SiPMs, while easily handling an exponentially increased number of channels.
[0058] In this embodiment of the application, optionally, the semiconductor optoelectronic device array 2 is soldered to the first surface of the flip chip 3, and the first signal connection device 61 is disposed on the second surface of the flip chip 3, with the first surface and the second surface facing opposite directions.
[0059] At this time, as Figure 2 As shown, the semiconductor optoelectronic device array 2 (such as a SiPM array) is coupled to the scintillator array 1 on one side and soldered to the first surface of the flip chip 3 on the other side. The second surface of the flip chip 3 is provided with a first signal connection device 61, which can transmit the channel array signal to the circuit board of the next layer.
[0060] Optional, such as Figure 1 As shown, the flip-chip plate 3 includes m columns and n rows of regions, where m is the number of regions of the flip-chip plate 3 in the first direction, n is the number of regions of the flip-chip plate in the second direction, and m and n are integers greater than or equal to 1; the at least two first circuit boards 4 are arranged in parallel along the first direction, and the plane in which each first circuit board 4 is located is parallel to the second direction.
[0061] At this point, the semiconductor optoelectronic device array 2 is divided into m*n regions by the flip-chip board 3, with m columns in the first direction (each column containing n regions) and n rows in the second direction (each row containing m regions). Thus, the channel signal of each region can be transmitted to the corresponding first circuit board 4 in the next layer through a separately arranged first signal connection device 61 within that region, ensuring the consistency of data transmission across all channels. Furthermore, the transmission path of each channel can be transmitted over a shorter distance within the region, improving response speed. The first circuit boards 4 are arranged in parallel along the first direction, and their planes are parallel to the second direction. This arrangement and orientation of the first circuit boards 4 are consistent with the region division direction, which not only facilitates the corresponding arrangement of different regions and circuit boards but also promotes structural compactness and consistency, thereby saving space, improving heat dissipation, facilitating manufacturing, and enhancing signal consistency.
[0062] Preferably, the m columns and n rows of the flip-chip 3 are equally divided regions, which can further improve the consistency of the structure, thereby improving the consistency of the signal.
[0063] Theoretically, the flip-chip board 3 can be divided into any number of rows and columns, and the first circuit board 4 can correspond to one or more areas. This is achieved by establishing the correspondence between the first circuit board 4 and the flip-chip board 3, and installing the first signal connection device 61 and the second signal connection device 62 at the corresponding positions. However, in practical applications, the inventors have found that if the correspondence is too complex and there are too many signal connection devices, it will hinder installation and miniaturization. In this embodiment, to simplify the setup, one first circuit board 4 can correspond to one column of areas, or to further improve the response speed, two first circuit boards 4 can correspond to one column of areas.
[0064] When using two first circuit boards 4 corresponding to one column of area, preferably, as follows: Figure 2 As shown, for the regions located in the same column, two first circuit boards 4 are respectively placed on both sides of the first signal connection device 61 in that column region. At this time, the signal connection device is in the middle, and the two first circuit boards 4 are placed on both sides. While ensuring signal consistency, this makes the structure more compact, saves more space, and is more conducive to heat dissipation.
[0065] In this embodiment of the application, to further simplify the setup, preferably, the flip-chip board 3 includes an area divided into m columns and 1 row, or m columns and 2 rows, which is equivalent to each column containing 1 or 2 areas. In this case, one first circuit board 4 can be used to correspond to one column of areas.
[0066] For example, such as Figure 6 As shown, the semiconductor optoelectronic device array 2 is divided into 4*1 equally divided regions by the flip-chip 3, with a total of 4 columns in the first direction and a total of 1 row in the second direction. One first circuit board 4 corresponds to one region in one column, and the four first circuit boards 4 are arranged side by side along the first direction at the corresponding positions in each region. Figure 9 The distribution pattern shown is the same as Figure 6 Basically the same, but Figure 9 Each area within it is larger, and the overall size is also larger.
[0067] For example, such as Figure 7 As shown, the semiconductor optoelectronic device array 2 is divided into 2*1 equally divided regions by the flip-chip 3, with a total of 2 columns in the first direction and a total of 1 row in the second direction. One first circuit board 4 corresponds to one region in one column, and two first circuit boards 4 are arranged side by side along the first direction at the corresponding positions in each region.
[0068] For example, such as Figure 8 As shown, the semiconductor optoelectronic device array 2 is divided into 2*2 equally divided regions by the flip-chip 3, with a total of 2 columns in the first direction and 2 rows in the second direction, which is equivalent to each column containing 2 regions. Among them, one first circuit board 4 corresponds to the 2 regions of 1 column, and two first circuit boards 4 are arranged side by side along the first direction at the corresponding positions of the 2 regions in each column.
[0069] Alternatively, when the flip-chip 3 includes an area divided into m columns, 1 row, or m columns and 2 rows, in order to further improve the response speed, two first circuit boards 4 can be positioned to correspond to a column area, and the two first circuit boards 4 can be placed on both sides of the first signal connection device 61 in that column area.
[0070] For example, such as Figure 2 , 3 As shown, the semiconductor optoelectronic device array 2 is divided into 2*2 equally divided regions by the flip-chip 3, with 2 columns in the first direction and 2 rows in the second direction, which means that each column contains 2 regions. Among them, two first circuit boards 4 are used to correspond to one column of regions. The two first circuit boards 4 are placed on both sides of the two first signal connection devices 61 in each column, and each first circuit board 4 corresponds to one region, resulting in faster response and data processing speed. Figure 10 The distribution pattern shown is the same as Figure 2 Basically the same, but Figure 10 Each area within it is larger, and the overall size is also larger.
[0071] In this embodiment of the application, for areas located in the same column, when two first circuit boards 4 are respectively placed on both sides of the first signal connection device 61 in the column area, the circuit layout of the two first circuit boards 4 can be staggered so that when the two first circuit boards 4 are separated by the first signal connection device 61 of one column area, they will not interfere with each other.
[0072] Optionally, the first signal connection device 61 is provided at the same location in each of the areas.
[0073] At this time, the first signal connection device 61 is set in the same position in each area, which can minimize the difference in signal paths between different channels in different areas.
[0074] Preferably, the first signal connection device 61 is disposed at the center of each of the regions.
[0075] At this time, the first signal connection device 61 is set in the center of each area, which is the most effective way to reduce the difference in signal paths between different channels in different areas.
[0076] Optionally, the fourth signal connection device 72 is disposed on the third surface of the second circuit board 5, and the fifth signal connection device 8 is disposed on the fourth surface of the second circuit board, wherein the third surface and the fourth surface face opposite directions.
[0077] At this time, as Figure 2 , 5As shown, the third side of the second circuit board 5 is connected to the first circuit board 4, and a fourth signal connection device 72 is provided on it to receive the signal transmitted by the first circuit board 4. A fifth signal connection device 8 is provided on the fourth side opposite to the third side for outputting the final processed signal.
[0078] Optionally, the position of each second signal connection device 62 on the first circuit board 4 is configured to connect with its corresponding first signal connection device 61 using the shortest distance. Similarly, the position of each fourth signal connection device 72 on the second circuit board 5 is configured to connect with its corresponding third signal connection device 71 using the shortest distance. This further improves response and operating speed.
[0079] Optionally, the first signal connection device 61, the second signal connection device 62, the third signal connection device 71, the fourth signal connection device 72, and / or the fifth signal connection device 8 may include one or more connectors. In this case, plug-in connections are used between circuit boards, which facilitates insertion and removal and saves space.
[0080] Optionally, the inverted plate 3 and the second circuit board 5 are fixed together by studs. In this case, in addition to the fixing function of the connector, the inverted plate 3 and the second circuit board 5 can also be fixed together by studs to improve stability. Specifically, through holes for studs to pass through can be provided at the four vertices of the inverted plate 3 and the second circuit board 5 for fixing with studs.
[0081] The radiation detector provided in this application embodiment allows the electrical signal output from each channel to reach the second circuit board 5 only through two sets of connectors and a first circuit board 4 for final signal processing. This results in virtually no signal attenuation, improving the detector's signal-to-noise ratio and channel consistency. Furthermore, the vertically placed circuit boards eliminate the need for inter-board gaps, effectively improving heat dissipation. In addition, this design is compact, highly stable, and fully leverages the size advantages of semiconductor optoelectronic devices such as SiPMs.
[0082] It should be noted that, in this document, the terms "comprising," "including," or any other variations thereof are intended to cover non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements includes not only those elements but also other elements not expressly listed, or elements inherent to such a process, method, article, or apparatus. Without further limitations, an element defined by the phrase "comprising one..." does not exclude the presence of other identical elements in the process, method, article, or apparatus that includes that element. Furthermore, it should be noted that the scope of the methods and apparatuses in the embodiments of this application is not limited to performing functions in the order shown or discussed, but may also include performing functions substantially simultaneously or in the reverse order, depending on the functions involved. For example, the described methods may be performed in a different order than described, and various steps may be added, omitted, or combined. Additionally, features described with reference to certain examples may be combined in other examples.
[0083] The embodiments of this application have been described above with reference to the accompanying drawings. However, this application is not limited to the specific embodiments described above. The specific embodiments described above are merely illustrative and not restrictive. Those skilled in the art can make many other forms under the guidance of this application without departing from the spirit and scope of the claims, and all of these forms are within the protection scope of this application.
Claims
1. A radiation detector, characterized by, include: Scintillator array; A semiconductor optoelectronic device array, wherein the semiconductor optoelectronic device array is coupled to the scintillator array; A flip chip board, wherein the semiconductor optoelectronic device array is soldered on the flip chip board, the flip chip board includes multiple regions, and each region is provided with a first signal connection device for outputting the semiconductor optoelectronic device array signal in that region; At least two first circuit boards perpendicular to the flip-chip plate, each first circuit board corresponding to one or more of the regions, each first circuit board having a first end close to the flip-chip plate and a second end away from the flip-chip plate; each first end is provided with a second signal connection device for connecting to the corresponding first signal connection device and receiving the signal output by the first signal connection device; each second end is provided with a third signal connection device for outputting the signal processed by the first circuit board; A second circuit board perpendicular to the at least two first circuit boards is provided on the second circuit board, and a fourth signal connection device is provided on the second circuit board for each of the third signal connection devices, for receiving the signal output by the third signal connection device; a fifth signal connection device is also provided on the second circuit board for outputting the signal processed by the second circuit board.
2. The radiation detector according to claim 1, characterized in that, The semiconductor optoelectronic device array is soldered to the first surface of the flip chip, and the first signal connection device is disposed on the second surface of the flip chip, with the first surface and the second surface facing opposite directions.
3. The radiation detector according to claim 1, characterized in that, The inverted plate includes m columns and n rows of regions, where m is the number of regions of the inverted plate in the first direction, n is the number of regions of the inverted plate in the second direction, and m and n are integers greater than or equal to 1. The at least two first circuit boards are arranged in parallel along the first direction, and the plane in which each first circuit board is located is parallel to the second direction; Preferably, the m-column and n-row regions of the inverted plate are equally divided regions.
4. The radiation detector according to claim 1, characterized in that, The first signal connection device is provided at the same location in each of the aforementioned areas; Preferably, the first signal connection device is disposed at the center of each of the regions.
5. The radiation detector according to claim 3 or 4, characterized in that, For the regions located in the same column, two of the first circuit boards are respectively placed on both sides of the first signal connection device in the column region.
6. The radiation detector according to claim 3 or 4, characterized in that, The position of each second signal connection device on the first circuit board is set in such a way that it is connected to the corresponding first signal connection device using the shortest distance.
7. The radiation detector according to claim 1, characterized in that, The fourth signal connection device is disposed on the third surface of the second circuit board, and the fifth signal connection device is disposed on the fourth surface of the second circuit board, with the third surface and the fourth surface facing opposite directions; The position of each of the fourth signal connection devices on the second circuit board is set in such a way that it is connected to the corresponding third signal connection device using the shortest distance.
8. The radiation detector according to claim 1, characterized in that, The first circuit board includes a position detection circuit; The second circuit board includes a signal preprocessing circuit.
9. The radiation detector according to claim 1, characterized in that, The first signal connection device, the second signal connection device, the third signal connection device, the fourth signal connection device and / or the fifth signal connection device include one or more connectors.
10. The radiation detector according to claim 1, characterized in that, The flip plate and the second circuit board are fixed together by studs.