Display device
By employing an insulating layer and recessed design in the Micro-LED display chip, the problems of cathode metal diffusion and migration are solved, achieving stability and reliability of current transmission and improving the overall performance of the display device.
CN224556174UActive Publication Date: 2026-07-24NUOSHI TECH (SUZHOU) CO LTD
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Patent Information
- Application Number
- CN202421717220.1
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Priority Date
- 2024-06-19
- Filing Date
- 2024-07-19
- Publication Date
- 2026-07-24
- Estimated Expiration
- 2034-07-19
AI Technical Summary
Technical Problem
The cathode metal structure of existing Micro-LED display chips is prone to metal diffusion and migration, resulting in unstable current transmission and poor reliability.
Method used
The structure adopts a pixel unit, a first insulating layer, a common cathode and a driving wafer. By setting the insulating layer and the recessed part, the diffusion and migration of cathode metal are avoided, ensuring the stability and reliability of current transmission.
Benefits of technology
It effectively prevents metal diffusion and migration in the cathode connection structure, ensuring the stability and reliability of current transmission and improving the overall performance of the display device.
✦ Generated by Eureka AI based on patent content.
Abstract
The utility model relates to a display device which comprises a pixel unit and a driving wafer, and the pixel unit comprises a P-type semiconductor layer, an active layer and an N-type semiconductor layer. Each pixel unit is sequentially coated with a first insulating layer and a common cathode, and the first insulating layer is provided with a second through hole and a first through hole; the common cathode is provided with a first concave part; a plurality of filling holes are sequentially formed in the second insulating layer at intervals in the second direction, at least one filling hole is filled with an anode contact, and the other filling hole is filled with a cathode contact; the P-type semiconductor layer is electrically connected with the corresponding anode contact, the exposed part, in the second through hole, of the N-type semiconductor layer is in electric contact with the common cathode, the first concave part penetrates through the first through hole and is in electric contact with the cathode contact, and the cathode contact is completely located in the second insulating layer or partially exposed out of the second insulating layer. The part, exposed out of the second insulating layer, of the cathode contact is located in the first insulating layer. According to the utility model, the stability and reliability of current transmission can be effectively ensured.
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