A reactor for producing advanced silicon-based materials

Abstract

The application relates to the field of silicon substrate production equipment, in particular to a reactor for producing advanced silicon-based materials, which comprises a reactor main body, a stirring device and a heating device; the stirring device comprises a stirring shaft, stirring blades and a driving mechanism; the stirring shaft is rotationally arranged in the reactor main body; the stirring blades are fixedly connected with the stirring shaft; the driving mechanism is in transmission connection with the stirring shaft; the heating device comprises a microwave generator and an electric resistance heater; the microwave generator is arranged outside the reactor main body; and the electric resistance heater is arranged on the stirring shaft. The heating mode of combining microwave heating and heating rods is adopted to realize uniform heating of the materials. In addition, the reactor is provided with high-efficiency stirring devices, which can obviously adjust and improve the mixing speed, uniformity and heat transfer of the materials, can effectively avoid the phenomena of channeling, slugging and dead bed, and can obtain a uniform fluidized state.

Description

Technical Field

[0001] This application relates to the field of silicon substrate production equipment, and in particular to a reactor for producing advanced silicon-based materials. Background Technology

[0002] Silicon-based materials play a crucial role in modern industry, with widespread applications in electronics, solar cells, semiconductor manufacturing, and composite materials. The quality and performance of these materials directly affect the performance and reliability of the final products.

[0003] Traditional fluidized bed reactors for producing silicon-based materials typically use external heaters. This method suffers from uneven heating, easily leading to localized overheating and material adhesion, which in turn affects material quality and production efficiency. Microwave heating is a highly efficient, uniform, and energy-saving heating technology. It directly excites the vibration of polar molecules inside the material through the penetrating effect of electromagnetic waves, generating frictional heat and achieving a rapid and overall heating effect. It avoids the heat transfer loss in traditional heating methods and is suitable for a variety of materials and application scenarios.

[0004] However, microwave heating technology has certain depth limitations when processing materials. When the radius of the heating furnace exceeds the maximum heating depth of the material, the material located in the center of the furnace cannot be directly heated by microwaves. In this case, the material in the central area mainly relies on material disturbance and heat conduction in the fluidized bed to indirectly obtain heat, resulting in uneven heating. Utility Model Content

[0005] In order to improve the uniformity of material heating, thereby improving reaction efficiency and production efficiency, this application provides a reactor for producing advanced silicon-based materials.

[0006] The reactor for producing advanced silicon-based materials provided in this application adopts the following technical solution: A reactor for producing advanced silicon-based materials includes a reactor body, a stirring device, and a heating device; The stirring device includes a stirring shaft, stirring blades, and a drive mechanism; the stirring shaft is rotatably disposed inside the reactor body; the stirring blades are fixedly connected to the stirring shaft, and the drive mechanism is drively connected to the stirring shaft. The heating device includes a microwave generator and a resistance heater. The microwave generator is located outside the reactor body, and the resistance heater is located on the stirring shaft.

[0007] By employing the aforementioned technical solution, a combination of microwave heating and heating rods is used to achieve uniform heating of the materials. Furthermore, the reactor is equipped with a highly efficient stirring device, which can significantly adjust and improve the mixing speed, uniformity, and heat transfer of the materials, effectively avoiding channeling, surging, and dead bed phenomena, and achieving a uniform fluidized state. This novel reactor design is expected to improve the production efficiency and product quality of silicon-based materials, providing a more reliable material foundation for applications in electronics, solar cells, semiconductor manufacturing, and composite materials.

[0008] Preferably, the stirring shaft has a central hole inside, and the resistance heater is disposed inside the central hole.

[0009] By adopting the above technical solution, the resistance heater can directly heat the material around the stirring shaft, enhancing the heating effect in the central area and further improving heating uniformity. Furthermore, the resistance heater is protected by the stirring shaft, preventing material from sticking to the heater.

[0010] Preferably, a sandwich cavity is provided between the side wall of the resistance heater and the inner wall of the central hole, which serves as a carrier gas channel and is connected to an external gas supply system. The side wall of the stirring shaft has several air holes that communicate with the carrier gas channel.

[0011] By adopting the above technical solution, by maintaining the air pressure in the sandwich cavity higher than the air pressure inside the reactor, and by using the air holes on the stirring shaft to generate turbulent airflow, the deposition on the shaft wall surface is effectively avoided, the problem of uneven deposition is solved, and the operating efficiency of the reactor and the product quality of silicon-based materials are further improved.

[0012] Preferably, the heating device further includes a waveguide, and the microwave generator is connected to the reactor body through the waveguide.

[0013] By adopting the above technical solution, the waveguide configuration enables microwaves to be transmitted more efficiently into the reactor body, thereby improving the efficiency of microwave heating.

[0014] Preferably, an air inlet is provided at the bottom of the reactor body.

[0015] By adopting the above technical solution, the design of the air inlet facilitates the introduction of the gas required for the reaction into the reactor, and also helps to regulate the atmosphere inside the reactor.

[0016] Preferably, a distribution plate is also provided at the bottom of the reactor body, and the distribution plate is located at the air inlet; the distribution plate is provided with air inlet holes; The distribution plate is also equipped with a discharge pipe, which extends from the air inlet to the outside of the reactor body.

[0017] By adopting the above technical solution, the design of the distribution plate allows the introduced gas to be distributed more evenly in the reactor, improving the gas utilization rate; at the same time, the setting of the discharge pipe facilitates the timely discharge of the material after the reaction is completed, improving production efficiency.

[0018] Preferably, the distribution plate is an arc-shaped plate with a concave shape, and the discharge pipe is located at the center of the distribution plate.

[0019] By adopting the above technical solution, the distribution plate can better adapt to the shape of the reactor, and at the same time, it helps the material to be evenly distributed and flow smoothly in the reactor.

[0020] Preferably, the upper part of the reactor body is provided with a feed inlet, and the stirring shaft extends from the upper part of the reactor body to the lower part of the reactor body.

[0021] By adopting the above technical solution, the feed inlet is designed to facilitate the addition of materials into the reactor, while the extended design of the stirring shaft enhances the stirring effect, which helps to achieve uniform mixing and heating of materials.

[0022] In summary, this application includes at least one of the following beneficial technical effects: 1. Microwave heating features selective heating, enabling precise heating of silicon-based materials without affecting the reactor walls, thus preventing unnecessary deposition and improving deposition uniformity. Combined with the use of resistance heaters, this provides a rapid and uniform heating mechanism for the reactor, effectively preventing localized overheating or underheating. 2. By setting up a stirring mechanism, the large agglomerates formed by the reaction can be efficiently sheared and broken, avoiding the deposition and agglomeration of silicon-based particles on the reactor wall, enhancing the fluidization effect of silicon-based materials, and achieving high heat and mass transfer efficiency; 3. Microwave heating only heats the silicon-based material, not the inner wall of the reactor, thus avoiding unnecessary deposition on the reactor body. Furthermore, by maintaining a higher air pressure in the interlayer cavity than inside the reactor body, and by using vents on the stirring shaft to generate turbulent airflow, deposition on the shaft wall is effectively prevented, solving the problem of uneven deposition and further improving the reactor's operating efficiency and the product quality of the silicon-based material. Attached Figure Description

[0023] Figure 1 This is a schematic diagram of the reactor used to produce advanced silicon-based materials in an embodiment of this application; The following are labels in the attached diagram: 1. Reactor body; 11. Air inlet; 12. Feed inlet; 13. Distribution plate; 14. Discharge pipe; 2. Stirring device; 21. Stirring shaft; 211. Jacket cavity; 212. Carrier gas port; 22. Stirring blades; 23. Drive mechanism; 3. Heating device; 31. Microwave generator; 32. Resistance heater; 33. Waveguide. Detailed Implementation

[0024] The following is in conjunction with the appendix Figure 1 This application will be described in further detail.

[0025] This embodiment discloses a reactor for producing advanced silicon-based materials, including a reactor body 1, a stirring device 2, and a heating device 3. An air inlet 11 is provided at the bottom of the reactor body 1 for introducing reaction gases into the reactor, and a feed inlet 12 is provided at the top of the reactor body 1 for feeding raw materials.

[0026] The stirring device 2 consists of a stirring shaft 21, stirring blades 22, and a drive mechanism 23. The stirring shaft 21 is rotatably installed inside the reactor body 1. The stirring blades 22 are fixedly connected to the stirring shaft 21. The drive mechanism 23 is driven by the stirring shaft 21 and is used to drive the stirring shaft 21 and the stirring blades 22 to rotate. It can efficiently shear and break up large agglomerates formed by the reaction, avoid the deposition and agglomeration of silicon-based particles on the reactor wall, enhance the fluidization effect of silicon-based materials, and improve the heat and mass transfer efficiency.

[0027] Furthermore, the heating device 3 includes a microwave generator 31 and a resistance heater 32. The microwave generator 31 is disposed outside the reactor body 1 and is used to generate microwaves to heat the material inside the reactor body 1. The resistance heater 32 is disposed on the stirring shaft 21 and is used to provide auxiliary heating to the material in the central area of ​​the reactor to improve the uniformity of heating.

[0028] During the reaction, microwaves generated by microwave generator 31 heat the materials through reactor body 1, while resistance heater 32 provides auxiliary heating to the materials in the central area. Stirring device 2 achieves uniform mixing of the materials through rotating stirring blades 22. This combination of microwave heating and resistance heating effectively improves the uniformity of material heating, allowing the reactant gases to decompose rapidly on the higher-temperature material surface, thereby achieving uniform deposition / coating of silicon-based materials and ultimately improving product quality and production efficiency.

[0029] Furthermore, the heating device 3 also includes a waveguide 33, through which the microwave generator 31 is connected to the reactor body 1. The waveguide 33 enables microwaves to be transmitted more efficiently into the reactor body 1, improving the utilization efficiency of microwave energy and the heating effect.

[0030] Furthermore, the stirring shaft 21 is vertically positioned and extends from the upper part of the reactor body 1 to the lower part, ensuring effective stirring and mixing of the materials throughout the reactor. A central hole is provided inside the stirring shaft 21, and the resistance heater 32 is disposed within this central hole. This structural design allows the resistance heater 32 to heat the materials in the central area more directly, further improving heating uniformity. A sandwich cavity 211 is provided between the sidewall of the resistance heater 32 and the inner wall of the central hole. This sandwich cavity 211 serves as a carrier gas channel, forming a carrier gas port 212 at the top of the stirring shaft 21 and connecting to an external gas supply system. Several air holes communicating with the carrier gas channel are provided on the sidewall of the stirring shaft 21.

[0031] Therefore, by introducing carrier gas into the carrier gas channel through an external gas supply system and maintaining the gas pressure in the interlayer cavity 211 higher than the gas pressure inside the reactor, and by using the air holes on the stirring shaft 21 to generate turbulent airflow, the deposition on the shaft wall surface is effectively avoided, the problem of uneven deposition is solved, and the operating efficiency of the reactor and the product quality of silicon-based materials are further improved.

[0032] Furthermore, a distribution plate 13 is provided at the bottom of the reactor body 1, located at the air inlet 11, and the distribution plate 13 has air inlet holes. This structural design allows the introduced gas to be distributed more evenly inside the reactor, improving the gas-material contact efficiency and reaction effect. Simultaneously, a discharge pipe 14 is also provided on the distribution plate 13, extending from the air inlet 11 to the outside of the reactor body 1, for discharging the material from inside the reactor after the reaction is complete.

[0033] The distribution plate 13 is designed as an arc-shaped plate with a concave shape, and the discharge pipe 14 is located at the center of the distribution plate 13. This arc-shaped concave design is conducive to the uniform distribution and flow of materials inside the reactor, while the centrally located discharge pipe 14 also facilitates the discharge of materials, further improving the reactor's performance.

[0034] Furthermore, the technical solution of this application adds high-precision temperature sensors, such as thermocouple sensors, inside the reactor body 1. Multiple thermocouple sensors can be used for multi-point control inside the reactor body to detect temperature changes in different areas in real time. These sensors are connected to the main control system, which adjusts the heating power of the microwave generator 31 and the resistance heater 32 accordingly based on the real-time temperature data, thereby effectively controlling the heating temperature.

[0035] This application focuses on protecting the structure of the reactor body 1, the stirring device 2, and the heating device 3, so as to achieve uniformity of material stirring and heating. The specific structure and temperature control method of the above main control system are all conventional methods in the field, and this application will not elaborate on them.

[0036] The above are all preferred embodiments of this application, and are not intended to limit the scope of protection of this application. Therefore, all equivalent changes made in accordance with the structure, shape and principle of this application should be covered within the scope of protection of this application.

Claims

1. A reactor for producing advanced silicon-based materials, characterized in that: Includes reactor body (1), stirring device (2), heating device (3); The stirring device (2) includes a stirring shaft (21), stirring blades (22) and a driving mechanism (23); the stirring shaft (21) is rotatably disposed inside the reactor body (1); the stirring blades (22) are fixedly connected to the stirring shaft (21), and the driving mechanism (23) is drivenly connected to the stirring shaft (21); The heating device (3) includes a microwave generator (31) and a resistance heater (32). The microwave generator (31) is located outside the reactor body (1). The resistance heater (32) is located on the stirring shaft (21).

2. The reactor for producing advanced silicon-based materials according to claim 1, characterized in that: The stirring shaft (21) has a central hole inside, and the resistance heater (32) is located inside the central hole.

3. The reactor for producing advanced silicon-based materials according to claim 2, characterized in that: A sandwich cavity (211) is provided between the side wall of the resistance heater (32) and the inner wall of the central hole. The sandwich cavity (211) serves as a carrier gas channel and is connected to an external gas supply system. The stirring shaft (21) has several air holes on its side wall that communicate with the carrier gas channel.

4. The reactor for producing advanced silicon-based materials according to claim 1, characterized in that: The heating device (3) also includes a waveguide (33), and the microwave generator (31) is connected to the reactor body (1) through the waveguide (33).

5. The reactor for producing advanced silicon-based materials according to claim 1, characterized in that: An air inlet (11) is provided at the bottom of the reactor body (1).

6. The reactor for producing advanced silicon-based materials according to claim 5, characterized in that: The bottom of the reactor body (1) is also provided with a distribution plate (13), which is located at the air inlet (11); the distribution plate (13) is provided with an air inlet hole; The distribution plate (13) is also provided with a discharge pipe (14), which extends from the air inlet (11) to the outside of the reactor body (1).

7. The reactor for producing advanced silicon-based materials according to claim 6, characterized in that: The distribution plate (13) is an arc-shaped plate with a concave shape, and the discharge pipe (14) is located at the center of the distribution plate (13).

8. The reactor for producing advanced silicon-based materials according to claim 1, characterized in that: The reactor body (1) is provided with a feed inlet (12) at the top, and the stirring shaft (21) extends from the top of the reactor body (1) to the bottom of the reactor body (1).

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