DEVICES WITH MAGNETIC TUNNEL TRANSITIONS AND METHOD FOR MANUFACTURING THEM

Abstract

Device comprising: a substrate that includes active devices; a first intermetallic dielectric layer, IMD layer; a first conductive feature extending through the first IMD layer, wherein the first conductive feature is electrically coupled to the active devices; a ground electrode above the first conductive feature; a magnetic tunnel transition element, comprising: a reference layer above the ground electrode; a tunnel barrier layer above the reference layer, wherein the tunnel barrier layer comprises oxidized magnesium; a free layer above the tunnel barrier layer; and a cover layer above the free layer, wherein the cover layer comprises oxidized magnesium, wherein the oxidized magnesium of the cover layer is more highly oxidized than the oxidized magnesium of the tunnel barrier layer; an upper electrode above the top layer; a second IMD layer above the upper electrode; and a second conductive feature extending through the second IMD layer, with the second conductive feature being in contact with the upper electrode.