Memory cell matrix made of non-volatile memory devices and operating methods therefor
Patent Information
- Application Number
- DE602020048245
- Authority / Receiving Office
- DE · DE
- Patent Type
- Patents
- Current Assignee / Owner
- Priority Date
- 2020-01-28
- Filing Date
- 2020-11-19
- Publication Date
- 2025-03-26
- Estimated Expiration
- 2040-11-19
AI Technical Summary
There is a need for nonvolatile memory devices with photoconductivity suitable for next-generation neuromorphic computing platforms, particularly in crossbar arrays used in neural networks, where existing solutions do not adequately leverage photoresponsive properties for efficient data storage and processing.
A crossbar array of nonvolatile memory devices incorporating phototransistors with resistance switching layers that change resistance values based on light illumination, allowing for analog conductance changes and efficient data storage and processing, utilizing materials like transition metal dichalcogenides and other 2D/3D materials for photoconductivity.
Enables efficient data storage and processing in neuromorphic computing by maintaining changed resistance values after light exposure, facilitating image storage and recognition tasks within neural networks, and allowing a single crossbar array to be used in both imaging and recognition modes.