Semiconductor device

Abstract

To provide a semiconductor device whose reverse recovery characteristic at diode operation is improved.SOLUTION: An embodiment includes a first electrode, a second electrode, a semiconductor part, a gate electrode, and a structure. The semiconductor part is provided between the first electrode and the second electrode. The gate electrode is provided between the semiconductor part and the second electrode. The structure extends into the semiconductor part under the gate electrode. The semiconductor part includes first to fifth layers. The first to fifth layers are stacked in this order. The first to third layers and the fifth layer are of a first conductivity type. The fourth layer is of a second conductivity type. The gate electrode faces the fourth layer. The structure includes an insulating film, a conductor, an insulating layer, and a silicide layer. The silicide layer is provided at a lower end of the structure. The lower end of the structure is in contact with the second layer. The second layer contains a heavy metal. The concentration of the heavy metal in the third layer is lower than that in the second layer.SELECTED DRAWING: Figure 2