Composite Structures and Related Manufacturing Processes
Patent Information
- Application Number
- JP2024541671
- Authority / Receiving Office
- JP · JP
- Patent Type
- Applications
- Current Assignee / Owner
- Priority Date
- 2022-02-18
- Filing Date
- 2023-01-31
- Publication Date
- 2025-12-10
AI Technical Summary
Substrates made from polycrystalline silicon carbide (p-SiC) are difficult to polish due to their hardness and polycrystalline structure, resulting in residual roughness that complicates direct bonding processes for composite structure fabrication.
A manufacturing process involving a starting substrate with a surface film made of glassy carbon, achieved by depositing a polymer resin layer with preformed carbon-carbon bonds, followed by annealing to form a crosslinked polymer resin layer and then converting it into a glassy carbon film, which is then polished to achieve low surface roughness.
The process results in a support substrate with significantly improved surface smoothness and electrical conductivity, facilitating the transfer of thin single crystal layers onto the glassy carbon film for the fabrication of high-quality composite structures suitable for power electronics.