High-pressure sensor with hydrogen barrier layer
Patent Information
- Authority / Receiving Office
- JP · JP
- Patent Type
- Applications
- Current Assignee / Owner
- ROBERT BOSCH GMBH
- Filing Date
- 2025-11-28
- Publication Date
- 2026-06-12
Smart Images

Figure 2026096184000001_ABST
Abstract
Claims
[Claim 1] A high-pressure sensor (10) for measuring the pressure of a hydrogen-containing fluid, A substrate (12) made of metal, A diaphragm (18) made of metal can bend along the normal direction (16) within the empty region (14) in response to ambient pressure, A measuring means (24) is provided above the diaphragm (18) in the normal direction (16) and has at least one measuring means layer (26) for electrically capturing the deflection of the diaphragm, At least an insulating layer (30) disposed on the diaphragm (18) and In a high-voltage sensor (10) having, A high-pressure sensor (10) characterized in that at least the diaphragm (18) is formed from chromium-containing steel, and a hydrogen barrier layer (34) is arranged above the diaphragm (18) in the normal direction (16), and at least the hydrogen barrier layer (34) is stretched planarly over the diaphragm (18). [Claim 2] The high-pressure sensor (10) according to claim 1, characterized in that the hydrogen barrier layer (34) is formed from aluminum oxide. [Claim 3] The high-pressure sensor (10) according to claim 1 or 2, characterized in that the hydrogen barrier layer (34) is formed from an amorphous material. [Claim 4] The high-pressure sensor (10) according to any one of claims 1 to 3, characterized in that the hydrogen barrier layer (34) is formed by atomic layer deposition. [Claim 5] The high-pressure sensor (10) according to any one of claims 1 to 4, characterized in that the chromium-containing steel is stainless steel. [Claim 6] The high-pressure sensor (10) according to any one of claims 1 to 5, characterized in that the average layer thickness (40) of the hydrogen barrier layer (34) is greater than 5 nm. [Claim 7] The high-pressure sensor (10) according to any one of claims 1 to 6, characterized in that the average layer thickness (40) of the hydrogen barrier layer (34) is less than 100 nm. [Claim 8] The high-voltage sensor (10) according to any one of claims 1 to 7, characterized in that the hydrogen barrier layer (34) is applied on the insulating layer (30). [Claim 9] The high-pressure sensor (10) according to any one of claims 1 to 8, characterized in that the hydrogen barrier layer (34) covers the surface (32) of the substrate (12). [Claim 10] The high-voltage sensor (10) according to any one of claims 1 to 9, characterized in that the hydrogen barrier layer (34) is disposed between the measuring means (24) and the insulating layer (30).