Sensor device

Abstract

To provide a sensor device that exhibits a measurement frequency significantly exceeding 200 kHz for measuring pressure. [Solution] The sensor device 1 for measuring pressure P comprises at least one base body 10 and at least one sensor material 20, wherein the base body 10 is formed in several areas as a base diaphragm 11, the base diaphragm 11 senses the pressure P to be measured and is deflected under the influence of the pressure P, the sensor material 20 is placed in several areas on the base diaphragm 11 and generates piezoelectric charges Q20+, QT20- under the influence of the deflection of the base diaphragm 11, the magnitude of the piezoelectric charges Q20+, Q20- is proportional to the value of the pressure P to be measured, and also comprises at least one conductor 40 for measuring temperature T, the conductor 40 is placed on the base body 10, the temperature T to be measured causes a change ΔR in the resistance of the conductor 40, the change ΔR in resistance is proportional to the value of the temperature T to be measured.

Description

[Technical Field]

[0001] The present invention relates to a sensor device using a preamble according to an independent claim. [Background technology]

[0002] Sensor devices are well known. They are used in various ways to measure pressure, temperature, and other parameters.

[0003] Therefore, sensor devices that measure pressure according to the piezoelectric measurement principle are known. For this purpose, they include piezoelectric materials such as quartz (SiO2) and gallium orthophosphate (GaPO4), which generate piezoelectric charges under the influence of the pressure being measured. The piezoelectric charges are generated on the surface of the piezoelectric material and tapped by electrodes. The amount of piezoelectric charge generated is proportional to the value of the pressure being measured.

[0004] Piezoelectric materials such as SiO2 and GaPO4 exhibit extremely high profile rigidity. This high profile rigidity allows piezoelectric sensor devices to exhibit high natural frequencies exceeding 500 kHz. This high natural frequency makes piezoelectric sensor devices very suitable for dynamic pressure measurement. In principle, the maximum measurement frequency is one-third of the natural frequency.

[0005] Such a piezoelectric sensor device for dynamic measurement of pressure is sold by the applicant under the designation Model 603C. In Model 603C, piezoelectric material in the form of multiple discs is spaced axially from a diaphragm by a base plate. The pressure to be measured acts as a force on the piezoelectric material through the diaphragm and the base plate. Since piezoelectric materials such as SiO2 and GaPO4 are brittle and may break under localized pressure peaks, the base plate ensures a uniform distribution of pressure on the piezoelectric material. The maximum measurement frequency of Model 603C is approximately 200 kHz. The technical specifications of Model 603C are described in data sheet 603C_003-288e-11.22.

[0006] Currently, users of pressure measurement sensor devices are seeking to further increase the measurement frequency. [Overview of the project] [Problems that the invention aims to solve]

[0007] The object of the present invention is to provide a sensor device that exhibits a measurement frequency significantly exceeding 200 kHz for measuring pressure. [Means for solving the problem]

[0008] This objective is resolved by the features of the independent claim.

[0009] The present invention relates to a sensor device arranged for measuring pressure, comprising at least one substrate and at least one sensor material, wherein the substrate is formed in several areas as a substrate diaphragm, the substrate diaphragm is designed to sense the pressure to be measured, the substrate diaphragm can be deflected under the influence of pressure, the sensor material is arranged in several areas on the substrate diaphragm, the sensor material generates a piezoelectric charge under the influence of the deflection of the substrate diaphragm, the magnitude of the generated piezoelectric charge is proportional to the magnitude of the pressure to be measured, and the sensor device is also designed for measuring temperature, comprising at least one conductor for this purpose, the conductor is arranged on the substrate, the temperature to be measured causes a change in the resistance of the conductor, the change in resistance is proportional to the value of the temperature to be measured.

[0010] An advantageous embodiment of the present invention is protected in the dependent claims.

[0011] The present invention will be described in more detail below with reference to the figures. [Brief explanation of the drawing]

[0012] [Figure 1]It is a partial plan view of a first embodiment of a sensor device 1 having a pressure sensor 1P for measuring a pressure P and a temperature sensor 1T for measuring a temperature T. [Figure 2] It is a partial cross-sectional view of the sensor device 1 shown in FIG. 1 along a cross-sectional path A-A. [Figure 3] It is a partial cross-sectional view of the sensor device 1 shown in FIG. 1 along a cross-sectional path B-B. [Figure 4] It is a partial plan view of a second embodiment of a sensor device 1 having a pressure sensor 1P for measuring a pressure P, a temperature sensor 1T for measuring a temperature T, and a compensator 1K. [Figure 5] It is a partial cross-sectional view of the sensor device 1 shown in FIG. 5 along a cross-sectional path C-C. [Figure 6] It is a partial cross-sectional view of the sensor device 1 shown in FIG. 5 along a cross-sectional path D-D. [Figure 7] It is a partial plan view of a third embodiment of a sensor device 1 having a group of pressure sensors 1P shown in FIGS. 1 to 3 and a temperature sensor 1T. [Figure 8] It is a partial plan view of a fourth embodiment of a sensor device 1 having a group of pressure sensors 1P shown in FIGS. 4 to 6, a temperature sensor 1T, and a group of compensators 1K. [Figure 9] It is a diagram showing curves of the amounts of pyroelectric charges P20+, P30+, P20-, P30- generated under the influence of a temperature change ΔT of the sensor device 1 shown in FIGS. 4 to 6 and FIG. 8. [Figure 10] It is a diagram showing a temperature-dependent non-linear sensitivity curve σ of the sensor device 1 having the pressure sensor 1P shown in FIGS. 1, 2, 4, 5, 7, and 8. [Figure 11] It is a partial schematic circuit diagram of a first embodiment of a sensor device 1 having the pressure sensor 1P shown in FIGS. 1 and 2, a transmission device 5, a converter unit 6, and an evaluation unit 7. [Figure 12]It is a schematic circuit diagram of a part of an embodiment of the sensor device 1 having the temperature sensor 1T shown in FIGS. 1, 3, 4, 6, 7 and 8, having the transmission device 5, having the converter unit 6, and having the evaluation unit 7. [Figure 13] It is a schematic circuit diagram of a part of a second embodiment of the sensor device 1 having the pressure sensor 1P shown in FIGS. 4 and 5, having the compensator 1K, having the transmission device 5, having the converter unit 6, and having the evaluation unit 7. [Figure 14] It is a schematic circuit diagram of a part of a third embodiment of the sensor device 1 having the pressure sensor 1P group shown in FIG. 7, having the transmission device 5, having the converter unit 6, and having the evaluation unit 7. [Figure 15] It is a schematic circuit diagram of a part of a fourth embodiment of the sensor device 1 having the pressure sensor 1P group and the compensator 1K group shown in FIG. 8, having the transmission device 5, having the converter unit 6, and having the evaluation unit 7.

Embodiments for Carrying Out the Invention

[0013] The same reference numerals indicate the same objects in the figures.

[0014] The sensor device 1 has the function of measuring the pressure P and the temperature T.

[0015] According to the first to fourth embodiments, the sensor device 1 includes at least one pressure sensor 1P for measuring the pressure P and at least one temperature sensor 1T for measuring the temperature T. According to the second and fourth embodiments, the sensor device 1 also includes at least one compensator 1K.

[0016] Furthermore, the sensor device 1 shown in FIGS. 11 to 15 includes at least one transmission device 5, at least one converter unit 6, and at least one evaluation unit 7.

[0017] In Figures 1 to 8, the sensor device 1 is shown in a three-dimensional coordinate system having a horizontal axis X, a transverse axis Y, and a vertical axis Z. The three axes X, Y, and Z are perpendicular to each other. The horizontal axis X and the transverse axis Y span the horizontal plane XY. Figures 1, 4, 7, and 8 show an embodiment of the sensor device 1 in a plan view in the horizontal plane XY. Figures 2, 3, 5, and 6 show the sensor device 1 in a cross-sectional view.

[0018] Base 10 The sensor device 1 comprises at least one base body 10. The base body 10 has the function of sensing the pressure P to be measured.

[0019] The substrate 10 is made from an electrically insulating material such as silicon or glass. Silicon is 10 at room temperature (20°C). 7 It has an electrical resistivity of Ωm or more. The glass is 10 at 20℃ 11 It has an electrical resistivity of Ωm or more.

[0020] The base body 10 has a front side and a rear side. On the front side, the base body 10 forms a support surface. The support surface is arranged in a horizontal plane XY. The support surface is 3 mm × 3 mm or less, preferably 2 mm × 2 mm or less. On the rear side, the base body 10 forms a base body opening 12.

[0021] Preferably, the substrate 10 is a silicon-on-insulator (SOI) having the following functional layers. - The support layer 13 is made of silicon and has a thickness along the vertical axis Z in the range of 200 to 500 μm, preferably 400 μm. The support layer 13 provides a support function for the components of the sensor device 1. - The boundary layer 14, fabricated from silicon, exhibits a thickness along the vertical axis Z in the range of 100 to 2 μm, preferably having a thickness of 50 μm, and preferably having a thickness of 5 μm. The boundary layer 14 has the function of forming a substrate diaphragm 11 in several areas. The boundary layer 14 defines the boundary of the substrate 10 in the horizontal plane XY. - The stopping layer 15 has a thickness of 1 μm along the vertical axis Z and is positioned along the vertical axis Z between the support layer 13 and the boundary layer 14. The stopping layer 15 is made of an oxide material and is 10 at 20°C 12 It has an electrical resistivity of Ωm or more. Therefore, the function of the stop layer 15 is to electrically insulate the boundary layer 14 from the support layer 13. The stop layer 15 also has the further function of stopping etching in the creation of substrate openings 12 by chemical etching in the substrate 10. Thereafter, silicon is etched away along the vertical axis Z on the rear side of the substrate 10 up to the stop layer 15.

[0022] The base diaphragm 11 is designed to sense the pressure P to be measured. The base diaphragm 11 has two surfaces F11, F12. The two surfaces F11, F12 include a front surface F11 and a rear surface F12. The front surface F11 is located on the front side of the base 10 in the horizontal plane XY. The pressure P acts on the front surface F11 along the vertical axis Z. The front surface F11 faces in the direction in which the pressure P acts. The rear surface of the base diaphragm 11 defines a base opening 12 on the rear side of the base 10. Under the influence of the pressure P, the base diaphragm 11 can be deflected along the vertical axis Z into the base opening 12.

[0023] The base diaphragm 11 has a thickness T11 of 20 μm or less, preferably 10 μm or less, and preferably 5 μm or less. The base diaphragm 11 has a diameter D11 of 300 μm or less, preferably 200 μm or less, and preferably 100 μm or less. The ratio of the thickness T11 to the diameter D11 of the base diaphragm 11 is selected so that the sensor device 1 has a natural frequency f1 of 1 MHz or more. Advantageously, the ratio of the thickness T11 to the diameter D11 of the base diaphragm 11 is 1.7. -2 From 5.0 10 -2 This is within the range. An exemplary ratio of the thickness T11 to the diameter D11 of the base diaphragm 11 results in the following natural frequency f1. - For the thickness T11 of the substrate diaphragm 11 equal to 5 μm and the diameter D11 of the substrate diaphragm 11 equal to 300 μm, as a result, the ratio of the thickness T11 to the diameter D11 of the substrate diaphragm 11 is 1.7×10 -2 equals to, and the natural frequency f1 exceeds 1 MHz. - For the thickness T11 of the substrate diaphragm 11 equal to 5 μm and the diameter D11 of the substrate diaphragm 11 equal to 200 μm, as a result, the ratio of the thickness T11 to the diameter D11 of the substrate diaphragm 11 is 2.5×10 -2 equals to, and the natural frequency f1 exceeds 2.5 MHz. - For the thickness T11 of the substrate diaphragm 11 equal to 5 μm and the diameter D11 of the substrate diaphragm 11 equal to 100 μm, the ratio of the thickness T11 to the diameter D11 of the substrate diaphragm 11 is 5.0×10 -2 and the natural frequency f1 exceeds 10 MHz.

[0024] In contrast to the type 603C piezoelectric sensor device with a metal diaphragm made of stainless steel 17 - 4PH, the substrate diaphragm 11 according to the present invention is made of silicon. Compared with stainless steel 17 - 4PH having a density of 7.8 g / cm 3 silicon has a density of 2.3 g / cm 3 . Therefore, the substrate diaphragm 11 according to the present invention is less than one - third lighter, thereby further increasing the natural frequency f1 of the sensor device 1.

[0025] Sensor material 20 The sensor device 1 comprises at least one sensor material 20. The sensor material 20 has a function of generating a measured value for the measured pressure P.

[0026] The sensor material 20 is piezoelectric and is quartz (SiO2), gallium orthophosphate (GaPO4), calcium gallogermanate (Ca3Ga2Ge4O 14 or CGG), langasite (La3Ga5SiO 14It consists of materials such as (or LGS), tourmaline, aluminum nitride (AlN), lead zirconate titanate (PZT), scandium aluminum nitride (Al(1-x)Sc(x)N, x=0..0.4), and sodium potassium niobate (K(x)Na(1-x)NbO3, x=0.2...0.5).

[0027] The sensor material 20 is placed on the substrate 10. Preferably, the sensor material 20 is placed on the front side of the substrate 10 in at least one region of the substrate diaphragm 11.

[0028] Preferably, the sensor material 20 is arranged in several areas on the front surface F11 of the base diaphragm 11. The sensor material 20 forms a layer extending in the horizontal plane XY. In the horizontal plane XY, the sensor material 20 has a bottom surface D20. The bottom surface D20 is greater than or equal to the diameter D11 of the base diaphragm 11. The sensor material 20 has a constant thickness T20 along the vertical axis Z. The thickness T20 is 10 μm or less, preferably 5 μm or less, and preferably 1 μm or less.

[0029] In the piezoelectric sensor device of type 603C, the sensor material is in the form of three discs, each with a thickness of 0.2 mm and a diameter of 3.5 mm. When viewed from the axial direction, the discs are spaced from the diaphragm by a metal base plate having a thickness of 0.6 mm and a diameter of 3.5 mm. In contrast to the piezoelectric sensor device of type 603, the sensor material 20 is arranged as a thin layer on the substrate diaphragm 11 according to the present invention. The thickness T20 of the thin layer is 10 μm or less. This means that there are no discs with the sensor material and the metal base plate is also omitted, thereby reducing the weight of the sensor device 1 according to the present invention. Furthermore, since the natural frequency f1 is inversely proportional to the weight of the sensor device 1, the natural frequency f1 of the sensor device 1 increases due to the absence of discs with the sensor material and the metal base plate.

[0030] Under the influence of the measured pressure P, the sensor material 20 generates piezoelectric charges Q20+ and Q20- as measured values. The pressure P acts along the vertical axis Z on one side of the front surface F11 of the base diaphragm 11, causing the base diaphragm 11 to flex. In Figure 2, the pressure P is schematically shown as an arrow. The piezoelectric material 20 generates piezoelectric charges Q20+ and Q20- under the influence of the flexing of the base diaphragm 11. The magnitude of the generated piezoelectric charges Q20+ and Q20- is proportional to the value of the measured pressure P. The durable operating temperature range of the sensor material 20 is from -40°C to +500°C.

[0031] Piezoelectric charges Q20+ and Q20- are generated on multiple surfaces of the sensor material 20, which are parallel to the horizontal plane XY. The piezoelectric charges Q20+ and Q20- include a first piezoelectric charge Q20+ and a second piezoelectric charge Q20-. In the cross-section of Figure 2, the first piezoelectric charge Q20+ is generated on the surface of the sensor material 20 facing away from the substrate diaphragm 11, and the second piezoelectric charge Q20- is generated on the surface of the sensor material 20 facing the substrate diaphragm 11. As described below, the first piezoelectric charge Q20+ is preferably converted into a pressure signal PS, and the second piezoelectric charge Q20- is preferably used as a ground potential signal MS.

[0032] The sensitivity σ of the sensor device 1 is extremely important. Sensitivity σ is the ratio of the measured value to the input value of the pressure P being measured. Sensitivity σ decreases cubically with increasing thickness T11 of the base diaphragm 11. Furthermore, it decreases quadratically with decreasing diameter D11 of the base diaphragm 11. Therefore, the sensitivity σ of the sensor device 1 decreases with increasing ratio of thickness T11 to diameter D11 of the base diaphragm 11. - The thickness T11 of the substrate diaphragm 11 is equal to 5 μm, and the diameter D11 of the substrate diaphragm 11 is equal to 300 μm, resulting in 1.7 10 -2 For a ratio of the thickness T11 to the diameter D11 of the base diaphragm 11 that is equal to σ, the sensitivity σ in sensor direction 1 is approximately 5 pC / bar. - The thickness T11 of the substrate diaphragm 11 is equal to 5 μm, and the diameter D11 of the substrate diaphragm 11 is equal to 200 μm, and as a result, 2.5 10 -2 For a ratio of the thickness T11 to the diameter D11 of the base diaphragm 11 that is equal to σ, the sensitivity σ in sensor direction 1 is approximately 0.5 pC / bar. - The thickness T11 of the substrate diaphragm 11 is equal to 5 μm, and the diameter D11 of the substrate diaphragm 11 is equal to 100 μm, resulting in 5.0 10 -2 For a ratio of the thickness T11 to the diameter D11 of the base diaphragm 11 that is equal to σ, the sensitivity σ in sensor direction 1 is approximately 0.05 pC / bar.

[0033] Compensator material 30 According to the second and fourth embodiments, the sensor device 1 comprises at least one compensating material 30. The compensating material 30 has the function of canceling out the pyroelectric effect of the sensor material 20 of the sensor device 1.

[0034] Certain sensor materials 20, such as CGG, LGS, tourmaline, AlN, and PZT, exhibit direct and / or indirect pyroelectric effects, where a temperature change ΔT results in the generation of pyroelectric charges P20+ and P20-. These pyroelectric charges P20+ and P20- are generated on the same surface of the sensor material 20 as the piezoelectric charges Q20+ and Q20-. Therefore, the measurement of pressure P is distorted by any temperature change ΔT. In the second and fourth embodiments of the sensor device 1, the sensor material 20 exhibits a pyroelectric effect.

[0035] In that case, the compensator material 30 is preferably made of the same CGS, LGS, tourmaline, AlN, PZT, etc. as the sensor material 20. Figure 9 shows the curves of the amount of pyroelectric charges P20+, P30+, P20-, and P30- generated with respect to a temperature change ΔT. The temperature T is represented on the horizontal axis over the range of the durable operating temperatures of the sensor material 20 and compensator material 30 from -40°C to +500°C. The vertical axis represents the pyroelectric charges P+-. The magnitude of the generated pyroelectric charges P20+, P30+, P20-, and P30- is proportional to the size of the bottom surface D20 of the sensor material 20 and the size of the bottom surface D30 of the compensator material 30. For example, with respect to a temperature change ΔT, the curve of the amount of pyroelectric charges P20+, P30+, P20-, and P30- generated is S-shaped. The slope of the curve reflects the sensitivity of the sensor material 20 and compensator material 30 to the pyroelectric effect. This sensitivity ranges from 0.1 pC / °C to 0.5 pC / °C.

[0036] The compensator material 30 is placed on the substrate 10. Preferably, the compensator material 30 is placed in at least one region on the front side of the substrate 10. Preferably, the compensator material 30 is placed outside the substrate diaphragm 11. The compensator material 30 forms a layer extending in the horizontal plane XY. In the horizontal plane XY, the compensator material 30 has a bottom surface D30. Preferably, the bottom surface D30 is the same size as the bottom surface D20 of the sensor material 20. Along the vertical axis Z, the compensator material 30 has a constant thickness T30. Preferably, the thickness T30 of the compensator material 30 is the same as the thickness T20 of the sensor material 20. The thickness T30 is 10 μm or less, preferably 5 μm or less, and preferably 1 μm or less.

[0037] Since the compensator material 30 is positioned outside the base diaphragm 11, the measured pressure P does not act on the compensator material 30 because the base 10 does not experience any deflection due to the pressure P, and therefore the compensator material 30 does not generate any piezoelectric charge as a measured value. Preferably, the sensor material 20 and the compensator material 30 have the same structure. Preferably, the size of the bottom surface D20 of the sensor material 20 is equal to the size of the bottom surface D30 of the compensator material 30. Preferably, the ratio of the size of the bottom surface D20 of the sensor material 20 to the size of the bottom surface D30 of the compensator material 30 is known.

[0038] Just as the sensor material 20 generates pyroelectric charges P20+ and P20- on multiple surfaces parallel to the horizontal plane XY, the compensator material 30 also generates pyroelectric charges P30+ and P30- on multiple surfaces parallel to the horizontal plane XY. The pyroelectric charges P20+, P30+, P20-, and P30- include a first pyroelectric charge P20+ and P30+ and a second pyroelectric charge P20- and P30-. In the cross-section of Figure 2, the first pyroelectric charge P20+ is generated on the surface of the sensor material 20 facing away from the substrate diaphragm 11, and the second pyroelectric charge P20- is generated on the surface of the sensor material 20 facing the substrate diaphragm 11. In the case of the compensator material 30, the first pyroelectric charge P30+ is generated on the surface of the compensator material 30 facing away from the substrate 10, and the second pyroelectric charge P30- is generated on the surface of the compensator material 30 facing the substrate 10.

[0039] Pressure sensor 1P The sensor device 1 comprises a plurality of sensor electrodes 21 and 23. The sensor electrodes 21 and 23 have the function of tapping piezoelectric charges Q20+ and Q20- from the surface of the sensor material 20.

[0040] The sensor electrodes 21 and 23 are positioned on a region of the surface of the sensor material 20 where piezoelectric charges Q20+ and Q20- are generated. The sensor electrodes 21 and 23 include a first sensor electrode 21 and a second sensor electrode 23. The sensor electrodes 21 and 23 are made from conductive materials such as silver (Ag), gold (Au), and platinum (Pt).

[0041] In the cross-sections of Figures 2 and 5, the first sensor electrode 21 is positioned on the surface of the sensor material 20 facing away from the substrate diaphragm 11 and taps a first piezoelectric charge Q20+. The second sensor electrode 23 is positioned on the surface of the sensor material 20 facing the substrate diaphragm 11 and taps a second piezoelectric charge Q20-. Each of the two sensor electrodes 21 and 23 forms a layer extending parallel to the horizontal plane XY. Parallel to the horizontal plane XY, the first sensor electrode 21 has a first sensor bottom surface D21, and the second sensor electrode 23 has a second sensor bottom surface D23. Along the vertical axis Z, each of the two sensor electrodes 21 and 23 exhibits a constant thickness of 200 nm or less.

[0042] Compared to a piezoelectric sensor device of type 603C, whose diaphragm has a diameter of 5.5 mm, the base diaphragm 11 according to the present invention is about one-tenth the size. The base diaphragm 11 is miniaturized. The surface of the diaphragm of type 603C has spaces equivalent to more than 100 base diaphragms 11 according to the present invention. The base diaphragm 11, the sensor material 20 placed thereon, and the sensor electrodes 21, 23 placed on the surface of the sensor material 20 form a miniaturized pressure sensor 1P, which not only generates piezoelectric charges Q20+, Q20- in relation to the pressure P to be measured, but also includes sensor electrodes 21, 23 for tapping the piezoelectric charges Q20+, Q20- from the surface of the sensor material 20.

[0043] The profile stiffness of the base diaphragm 11 is not constant across its diameter D11. While the profile stiffness is constant in the central area of ​​the base diaphragm 11 along the vertical Z direction, it increases in the peripheral areas transitioning to the stop layer 15 and the support layer 13. This increase in profile stiffness in the peripheral areas of the base diaphragm 11 also reduces the sensitivity σ of the sensor device 1, and consequently the amount of piezoelectric charges Q20+ and Q20- generated. This reduction in the sensitivity σ of the sensor device 1 in the peripheral areas of the base diaphragm 11 distorts the measurement of pressure P. To avoid this reduction in the sensitivity σ of the sensor device 1 in the peripheral areas of the base diaphragm 11, preferably, the first piezoelectric charge Q20+ is not tapped there at all, and this first piezoelectric charge Q20+ is preferably used as the pressure signal PS. Therefore, the diameter of the first sensor bottom surface D21 to which the first piezoelectric charge Q20+ is tapped is smaller than the diameter D11 of the base diaphragm 11. Preferably, the diameter of the first sensor bottom surface D21 is 80% or less, preferably 60% or less, of the diameter D11 of the base diaphragm 11.

[0044] On the other hand, the second sensor bottom surface D23 to which the second piezoelectric charge Q20- is tapped is preferably such that the second piezoelectric charge Q20- is used as the first ground potential signal MS, and is preferably greater than or equal to the diameter D11 of the substrate diaphragm 11.

[0045] The sensor device 1 is equipped with a plurality of sensor contacts 22 and 24. The sensor contacts 22 and 24 have the function of providing electrical contact between the sensor electrodes 21 and 23 and the transmission device 5.

[0046] The sensor contacts 22 and 24 are made of conductive materials such as Ag, Au, and Pt.

[0047] The sensor contacts 22 and 24 include a first sensor contact 22 and a second sensor contact 24. The first sensor contact 22 is positioned on the first sensor electrode 21 and establishes electrical contact with the first sensor electrode 21. The second sensor contact 24 is positioned on the second sensor electrode 23 and establishes electrical contact with the second sensor electrode 23. Each of the two sensor contacts 22 and 24 has a planar extension parallel to the horizontal plane XY, and the planar extension is designed to be large enough to make electrical contact such as a thermal ultrasonic ball-wedge joint or ultrasonic wedge-wedge joint.

[0048] The base diaphragm 11, the sensor material 20 disposed on the front surface F11 of the base diaphragm 11, and the sensor electrodes 21 and 23 disposed on the surface of the sensor material 20 form the pressure sensor 1P of the first to fourth embodiments of the sensor device 1. The piezoelectric charges Q20+ and Q20- are measured values ​​of the pressure sensor 1P. The continuous operating temperature of the pressure sensor 1P is in the range of -40°C to +500°C.

[0049] The sensitivity σ of the pressure sensor 1P is the ratio of the measured pressure P to the input variable. As shown in Figure 10, the sensitivity σ is temperature-dependent. The horizontal axis represents the temperature T over the continuous operating temperature range of the sensor material 20 from -40°C to +500°C. The vertical axis represents the magnitude of the generated piezoelectric charges Q20+ and Q20-. The sensitivity σ forms, for example, a nonlinear curve. As the temperature T increases, the piezoelectric charges Q20+ and Q20- generated by the sensor material 20 decrease. The measurement of pressure P is distorted by this temperature-dependent nonlinearity of the sensitivity σ of the pressure sensor 1P.

[0050] To compensate for the temperature-dependent nonlinearity of the sensitivity σ of pressure sensor 1P, a temperature correction TC is determined before the actual measurement of pressure P. For this purpose, Figure 10 shows a horizontal linear curve L at the true pressure value, where the true pressure value does not exhibit the temperature-dependent nonlinearity of sensitivity σ and represents the pressure P measured without distortion. The temperature correction TC is the difference between the nonlinear curve of sensitivity σ and the horizontal linear curve L. The temperature correction TC can be a correction calculation such as regression analysis. The temperature correction TC outputs a temperature correction value for sensitivity σ for each temperature T.

[0051] Subsequently, in the actual measurement of pressure P by pressure sensor 1P, the measurement of pressure P by pressure sensor 1P is combined with the measurement of temperature T by temperature sensor 1T. According to the following explanation, a temperature correction value TC corresponding to the measured temperature T is identified, and therefore the nonlinearity of the temperature dependence of sensitivity σ in the measurement value of pressure sensor 1P is corrected.

[0052] Temperature sensor 1T The sensor device 1 comprises at least one conductor 40. The conductor 40 has the function of generating a change in resistance ΔR with respect to the temperature T to be measured.

[0053] Preferably, the conductor 40 is positioned on the front side of the substrate 10. Preferably, the conductor 40 is positioned outside the substrate diaphragm 11. The conductor 40 is positioned on the substrate 10 by chemical vapor deposition, physical vapor deposition, or the like.

[0054] The conductor 40 is made up of conductive material M40 such as Ni, Pt, and Ti.

[0055] The conductor 40 has a thickness of 0.10 to 10 μm, a width of 2 to 20 μm, and 1 mm 2 The following meandering portion is applied to the substrate 10, having the following surface area. The electrical resistance of the conductor 40 is several kΩ. The measured temperature T causes a change ΔR in the resistance of the conductor 40, and this change ΔR is proportional to the measured temperature T.

[0056] The sensor device 1 is equipped with a plurality of conductive contacts 42, 44. The conductive contacts 42, 44 have the function of providing electrical contact between the conductor 40, the transmission device 5, and the power supply source 41.

[0057] The conductive contacts 42 and 44 are made of conductive materials such as Ag, Au, and Pt.

[0058] The conductor contacts 42, 44 include a first conductor contact 42 and a second conductor contact 42. The first conductor contact 42 is located at the first end of the conductor 40 and establishes electrical contact with the first end of the conductor 40. The second conductor contact 44 is located at the second end of the conductor 40 and establishes electrical contact with the second end of the conductor 40. Each of the two conductor contacts 42, 44 has a planar extension parallel to the horizontal plane XY, and the planar extension is designed to be large enough to make electrical contact such as a thermal ultrasonic ball-wedge joint or ultrasonic wedge-wedge joint.

[0059] The sensor device 1 includes at least one power supply source 41. The power supply source 41 has the function of generating a measurement value of the resistance change ΔR of the conductor 40.

[0060] For this purpose, the power supply 41 comprises a DC power supply with a DC current I, and several power conductors 46, 48 made from conductive materials such as Ag and Au. The power conductors 46, 48 include a first power conductor 46 and a second power conductor 48. According to the schematic circuit diagram shown in Figure 12, electrical contact with the first power conductor 46 is established at the first conductor contact 42, and electrical contact with the second power conductor 48 is established at the second conductor contact 44. The two power conductors 46, 48 are wires typically having a diameter in the range of 15 to 200 μm. Thus, the DC current I from the DC power supply flows through the conductor 40. The magnitude of the DC current I is in the range of 1.0 μA to 10 μA. According to Ohm's law, the change in resistance ΔR and the applied current I result in voltages U40+ and U40-. The magnitudes of the voltages U40+ and U40- correspond to the change in resistance ΔR and are therefore proportional to the measured temperature T value. The voltages U40+ and U40- include a first voltage U40+ at the first end of the conductor 40 and a second voltage U40- at the second end of the conductor 40. The first voltage U40+ is applied to the first conductor contact 42. The second voltage U40- is applied to the second conductor contact 44. As described below, the first voltage U40+ is preferably converted into a temperature signal TS, and the second voltage U40- is preferably used as a second ground potential signal MS'.

[0061] A substrate 10, a conductor 40 placed on the substrate 10, and a power supply 41 form a temperature sensor 1T. Voltages U40+ and U40- are measured values ​​of the temperature sensor 1T. The magnitudes of voltages U40+ and U40- correspond to the measured temperature T relative to a reference temperature. The continuous operating temperature range of the temperature sensor 1T is from -40°C to +800°C. The sensitivity of the temperature sensor 1T for temperature T is in the range of 5.0 μV / °C to 9.0 μV / °C.

[0062] Advantageously, the temperature sensor 1T is positioned at a second horizontal distance DXY' of 2 mm or less from the pressure sensor 1P. This small second horizontal distance DXY' ensures that the temperature T measured by the temperature sensor 1T is equal to the temperature T acting on the pressure sensor 1P.

[0063] Compensator 1K According to the second and fourth embodiments, the sensor device 1 comprises a plurality of compensator electrodes 31 and 33. The compensator electrodes 31 and 33 have the function of tapping pyroelectric charges P30+ and P30- from the surface of the compensator material 30. The first sensor electrode 21 taps a first pyroelectric charge P20+, and the second sensor electrode 23 taps a second pyroelectric charge P20-.

[0064] The compensator electrodes 31 and 33 are positioned in areas of the surface of the compensator material 30 where pyroelectric charges P30+ and P30- are generated. The compensator electrodes 31 and 33 include a first compensator electrode 31 and a second compensator electrode 33. The compensator electrodes 31 and 33 are fabricated from conductive materials such as Ag, Au, and Pt, just like the sensor electrodes 21 and 23.

[0065] In the cross-section of Figure 5, the first compensator electrode 31 is positioned on the surface of the compensator material 30 facing away from the substrate 10 and taps a first pyroelectric charge P30+. The second compensator electrode 33 is positioned on the surface of the compensator material 30 facing the substrate 10 and taps a second piezoelectric charge P30-. Each of the two compensator electrodes 31 and 33 forms a layer extending parallel to the horizontal plane XY. Along the vertical axis Z, each of the two compensator electrodes 31 and 33 exhibits a constant thickness of 200 nm or less.

[0066] In the sensor material 20, the pyroelectric charges P20+ and P20- are tapped together with the piezoelectric charges Q20+ and Q20- by the sensor electrodes 21 and 23.

[0067] Preferably, the sensor electrodes 21, 23 and the compensator electrodes 31, 33 have the same structure. Preferably, the area of ​​the sensor electrodes 21, 23 is equal to the area of ​​the compensator electrodes 31, 33. Preferably, the ratio of the area of ​​the sensor electrodes 21, 23 to the area of ​​the compensator electrodes 31, 33 is known.

[0068] According to the second and fourth embodiments, the sensor device 1 includes a plurality of compensator contacts 32 and 34. The compensator contacts 32 and 34 have the function of providing electrical contact between the compensator electrodes 31 and 33 and the transmission device 5.

[0069] The compensator contacts 32 and 34 are made of conductive materials such as Ag, Au, and Pt, just like the sensor contacts 22 and 24.

[0070] The compensator contacts 32 and 34 include a first compensator contact 32 and a second compensator contact 34. The first compensator contact 32 is positioned on the first compensator electrode 31 and establishes electrical contact with the first compensator electrode 31. The second compensator contact 34 is positioned on the second compensator electrode 33 and establishes electrical contact with the second compensator electrode 33. Each of the two compensator contacts 32 and 34 has a planar extension parallel to the horizontal plane XY, and the planar extension is designed to be large enough to make electrical contact such as a thermal ultrasonic ball-wedge joint or ultrasonic wedge-wedge joint.

[0071] The region of the substrate 10 on which the compensator material 30 is placed, the compensator material 30 placed on the substrate 10, and the compensator electrodes 31 and 33 placed on the surface of the compensator material 30 form the compensator 1K of the embodiment of the sensor device 1, as shown in Figures 1 to 3. The durable operating temperature range of the compensator 1K is from -40°C to +500°C.

[0072] Advantageously, the compensator 1K is positioned at a first horizontal distance DXY of 2 mm or less from the pressure sensor 1P. This small first horizontal distance DXY ensures that the temperature change ΔT acts equally on the sensor material 20 of the pressure sensor 1P and the compensator material 30 of the compensator 1K, generating pyroelectric charges P20+, P20- on the sensor material 20 and pyroelectric charges P30+, P30- on the compensator material 30.

[0073] Advantageously, the sensor material 20 generates multiple piezoelectric charges Q20+, Q20- under the influence of pressure P, and multiple pyroelectric charges P20+, P20- under the influence of temperature change ΔT. For measurement frequencies f* at up to 1 / 3 of the natural frequency f1 of 1 MHz or higher, the multiple piezoelectric charges Q20+, Q20- of the sensor material 20 are generated at a rate of 10 per second. 6 Representing individual piezoelectric charges Q20+ and Q20-, the multiple pyroelectric charges K20+ and K20- of the sensor material 20 are 10 per second. 6 This represents a number of pyroelectric charges P20+ and P20-. The compensator material 30 generates a large number of pyroelectric charges P30+ and P30- under the influence of a temperature change ΔT. For measurement frequencies f* at up to 1 / 3 of the natural frequency f1 of 1 MHz or higher, the multiple pyroelectric charges P30+ and P30- of the compensator material 30 are generated at a rate of 10 per second. 6 This represents individual pyroelectric charges P30+ and P30-. For each pyroelectric charge P20+ and P20- of the sensor material 20, there exist pyroelectric charges P30+ and P30- corresponding to the time series of the compensator material 30.

[0074] Pressure sensor group 1P According to the third and fourth embodiments of the sensor device 1, the base body 10 comprises a plurality of base body diaphragms 11.

[0075] Preferably, the multiple substrate diaphragms 11 are arranged on the front side of the substrate 10 in the horizontal plane XY. The pressure P to be measured acts along the direction Z perpendicular to the front surface F11 of the multiple substrate diaphragms 11, causing the multiple substrate diaphragms 11 to flex. In each of the multiple substrate diaphragms 11, the sensor material 20 is arranged in at least one area on the front surface F11 of the substrate diaphragm 11. The sensor material 20 generates piezoelectric charges Q20+ and Q20- as a result of the flexing of the substrate diaphragm 11. In each of the multiple substrate diaphragms 11, a first sensor electrode 21 is positioned on the surface of the sensor material 20 facing away from the substrate diaphragm 11 and taps a first piezoelectric charge Q20+. A second sensor electrode 23 is positioned on the surface of the sensor material 20 facing the substrate diaphragm 11 and taps a second piezoelectric charge Q20-.

[0076] According to the third and fourth embodiments, the sensor device 1 comprises a plurality of sensor group conductors 25 and 27. The sensor group conductors 25 and 27 have the function of collecting piezoelectric charges Q20+ and Q20-.

[0077] The sensor group conductors 25 and 27 are made of conductive materials such as Ag, Au, and Pt.

[0078] The sensor group conductors 25 and 27 are arranged in two surface regions of the sensor material 20. The sensor group conductors 25 and 27 include a first sensor group conductor 25 and a second sensor group conductor 27. The first sensor group conductor 25 establishes electrical contact with the first sensor electrode 21 and connects them electrically in series. The second sensor group conductor 27 establishes electrical contact with the second sensor electrode 23 and connects them electrically in series.

[0079] The sensor material 20 is arranged on a plurality of base diaphragms 11 on the front surface F11, the sensor material 20 is arranged on the plurality of base diaphragms 11, and the sensor electrodes 21, 23 and sensor group conductors 25, 27 are arranged on the surface of the sensor material 20, forming a pressure sensor group 1P.

[0080] Advantageously, two or more substrate diaphragms 11, preferably 16 or more substrate diaphragms 11, and preferably 128 or more substrate diaphragms 11 are formed on the substrate 10.

[0081] The increase in the natural frequency f1 of the sensor device 1 according to the present invention is achieved by decreasing the ratio of the thickness T11 to the diameter D11 of the base diaphragm 11, and the sensitivity σ of the sensor device 1 according to the present invention is similarly reduced. The sensitivity σ changes quadratically with the diameter D11 of the base diaphragm 11. When the thickness T11 is kept constant, halving the diameter D11 of the base diaphragm 11 reduces the magnitude of the generated piezoelectric charges Q20+ and Q20- to one-quarter. By arranging a plurality of base diaphragms 11 on a base 10, placing the sensor material 20 on each of the front surfaces F11 of the plurality of base diaphragms 11, and connecting sensor electrodes 21 and 23 that tap the piezoelectric charges Q20+ and Q20- of the sensor material 20 in series, the reduction in the sensitivity σ of the sensor device 1 according to the present invention can be compensated for and even improved.

[0082] According to the third and fourth embodiments, the sensor device 1 includes a plurality of sensor group contacts 26, 28. The sensor group contacts 26, 28 have the function of providing electrical contact with the transmission device 5.

[0083] The sensor group contacts 26 and 28 are made from conductive materials such as Ag and Au. The sensor group contacts 26 and 28 include a first sensor group contact 26 and a second sensor group contact 28. The first sensor group contact 26 is positioned on the first sensor group conductor 25 and establishes electrical contact with it. The second sensor group contact 28 is positioned on the second sensor group conductor 27 and establishes electrical contact with it. Each of the two sensor group contacts 26 and 28 has a planar extension parallel to the horizontal plane XY, and the planar extension is designed to be large enough to allow electrical contact such as thermal ultrasonic ball-wedge bonding and ultrasonic wedge-wedge bonding.

[0084] Compensator 1K group According to the fourth embodiment, the sensor device 1 comprises a substrate 10 having a plurality of regions having a compensator material 30.

[0085] Preferably, the multiple regions having the compensator material 30 are arranged on the front side of the substrate 10. Both the compensator material 30 and the sensor material 20 are preferably made from the same material having a pyroelectric effect, such as CGS, LGS, tourmaline, AlN, or PZT.

[0086] The regions containing the compensator material 30 are spaced apart from each other and are therefore electrically insulated from each other by the electrically insulating material of the substrate 10. Preferably, the regions having the compensator material 30 are located outside the plurality of substrate diaphragms 11. Therefore, the regions having the compensator material 30 are also electrically insulated from the sensor material 20 located on the plurality of substrate diaphragms 11 by the electrically insulating material of the substrate 1.

[0087] Since the multiple regions 30 having the compensator material are arranged outside the multiple base diaphragms 11, the measured pressure P does not act on the multiple regions having the compensator material 30 because the base 10 does not experience any deflection due to the action of the pressure P, and therefore the multiple regions having the compensator material 30 do not generate piezoelectric charges as measured values.

[0088] A temperature change ΔT acts equally on the sensor material 20 and the compensator material 30 arranged on the substrate diaphragm 11, generating pyroelectric charges P20+ and P20- in the sensor material 20 and P30+ and P30- in the compensator material 30. Preferably, the sensor material 20 and the compensator material 30 have the same structure, and as a result, the magnitude of the pyroelectric charges P20+ and P20- generated in the sensor material 20 is equal to the magnitude of the pyroelectric charges P30+ and P30- generated in the compensator material 30.

[0089] In each of the multiple substrate diaphragms 11, a first sensor electrode 21 is positioned on the surface of the sensor material 20 facing away from the substrate diaphragm 11 and taps a first pyroelectric charge P20+. The second sensor electrode 23 is positioned on the surface of the sensor material 20 facing the substrate diaphragm 11 and taps a second pyroelectric charge P20-. In each of the multiple regions having the compensator material 30, a first compensator electrode 31 is positioned on the surface of the compensator material 30 facing away from the substrate 10 and taps a first pyroelectric charge P30+. The second compensator electrode 33 is positioned on the surface of the compensator material 30 facing the substrate 10 and taps a second pyroelectric charge P30-.

[0090] The sensor device 1 comprises a plurality of compensator group conductors 35 and 37. The compensator group conductors 35 and 37 have the function of collecting pyroelectric charges P30+ and P30-.

[0091] The compensator group conductors 35 and 37 are made of conductive materials such as Ag, Au, and Pt.

[0092] The compensator group conductors 35 and 37 are arranged in two surface regions of the compensator material 30. The compensator group conductors 35 and 37 include a first compensator group conductor 35 and a second compensator group conductor 37. The first compensator group conductor 35 establishes electrical contact with the first compensator electrode 31 and connects them electrically in series. The second compensator group conductor 37 establishes electrical contact with the second compensator electrode 33 and connects them electrically in series.

[0093] The regions of the substrate 10 on which the compensator material 30 is arranged, the regions on which the compensator material 30 is arranged, and the compensator electrodes 31, 33 and compensator group conductors 35, 37 arranged on the surfaces of these regions on which the compensator material 30 are arranged form a compensator group 1K.

[0094] The sensor device 1 includes a plurality of compensator group contacts 36, 38. The compensator group contacts 36, 38 have the function of providing electrical contact with the transmission device 5.

[0095] The compensator group contacts 36 and 38 are made of conductive materials such as Ag, Au, and Pt.

[0096] The compensator group contacts 36 and 38 include a first compensator group contact 36 and a second compensator group contact 38. The first compensator group contact 36 is positioned on the first compensator group conductor 35 and establishes electrical contact with it. The second compensator group contact 38 is positioned on the second compensator group conductor 37 and establishes electrical contact with it. Each of the two compensator group contacts 36 and 38 has a planar extension parallel to the horizontal plane XY, and the planar extension is designed to be large enough to form electrical contacts such as thermal ultrasonic ball-wedge joints and ultrasonic wedge-wedge joints.

[0097] Transmission device 5 The transmission device 5 has the function of transmitting piezoelectric charges Q20+, Q20- and voltages U40+, U40-.

[0098] The transmission device 5 comprises a plurality of charge carriers 51, 51', 52, 52' made from conductive materials such as copper (Cu), Ag, and Au. The charge carriers 51 and 52 are typically wires with a diameter of 15 to 200 μm.

[0099] The charge carriers 51, 51', 52, and 52' include a first charge carrier 51, a second charge carrier 52, a first voltage carrier 51', and a second voltage carrier 52'.

[0100] According to the schematic circuit diagram shown in Figure 11, the first charge transmission body 51 is in contact with the first sensor contact 22, and the second charge transmission body 52 is in contact with the second sensor contact 24. Charges Q20+ and Q20- are transmitted from the two sensor contacts 22 and 24 via the voltage transmission bodies 51 and 52.

[0101] According to the schematic circuit diagram shown in Figure 12, the first voltage transmitter 51' is in contact with the first conductor contact 42, and the second voltage transmitter 52' ​​is in contact with the second conductor contact 44. Voltages U40+ and U40- are transmitted from the two conductor contacts 42 and 44 through the voltage transmitters 51' and 52'.

[0102] According to the schematic circuit diagram shown in Figure 13, the first charge carrier 51 establishes electrical contact with the first sensor electrode 21 via the first sensor contact 22 and with the second compensator electrode 33 via the second compensator contact 34. Thus, the first charge carrier 51 transmits the first piezoelectric charge Q20+ and the first pyroelectric charge P20+ from the sensor material 20, and the second pyroelectric charge P30- from the compensator material 30. Advantageously, the magnitude of the first pyroelectric charge P20+ from the sensor material 20 is equal to the magnitude of the second pyroelectric charge P30- from the compensator material 30, and as a result, the pyroelectric charges P20+ and P30- in the first charge carrier 51 cancel each other out.

[0103] According to the schematic circuit diagram shown in Figure 13, the second charge carrier 52 establishes electrical contact with the second sensor electrode 23 via the second sensor contact 24 and with the first compensator electrode 31 via the first compensator contact 32. Thus, the second charge conductor 52 transmits the second piezoelectric charge Q20- and the second pyroelectric charge P20- of the sensor material 20, as well as the first pyroelectric charge P30+ of the compensator material 30. Advantageously, the magnitude of the second pyroelectric charge P20- of the sensor material 20 is equal to the magnitude of the first pyroelectric charge P30+ of the compensator material 30, and as a result, the pyroelectric charges P20- and P30+ in the second charge carrier 52 cancel each other out.

[0104] Piezoelectric charges Q20+ and Q20- are transmitted from sensor contacts 22 and 24 via the charge transmission bodies 51 and 52.

[0105] According to the schematic circuit diagram shown in Figure 14, the first charge transmitter 51 is in contact with the first sensor group contact 26, and the second charge transmitter 52 is in contact with the second sensor group contact 28. Charges Q20+ and Q20- are discharged from the two sensor group contacts 26 and 28 via these voltage transmitters 51 and 52.

[0106] According to the schematic circuit diagram shown in Figure 15, the first charge conductor 51 establishes electrical contact with the first sensor group contact 26 and the second compensator group contact 38. Thus, the first charge conductor 51 transmits the first piezoelectric charge Q20+ and the first pyroelectric charge P20+ of the sensor material 20, and the second pyroelectric charge P30- of the compensator material 30. Advantageously, the magnitude of the first pyroelectric charge P20+ of the sensor material 20 is equal to the magnitude of the second pyroelectric charge P30- of the compensator material 30, and as a result, the pyroelectric charges P20+ and P30- in the first charge conductor 51 cancel each other out.

[0107] According to the schematic circuit diagram shown in Figure 15, the second charge conductor 52 establishes electrical contact with the second sensor group contact 28 and with the first compensator group contact 36. Thus, the second charge conductor 52 transmits the second piezoelectric charge Q20- and the second pyroelectric charge P20- of the sensor material 20, and the first pyroelectric charge P30+ of the compensator material 30. Advantageously, the magnitude of the second pyroelectric charge P20- of the sensor material 20 is equal to the magnitude of the first pyroelectric charge P30+ of the compensator material 30, and as a result, the pyroelectric charges P20- and P30+ in the second charge conductor 52 cancel each other out.

[0108] Converter unit 6 The converter unit 6 has the function of electrically converting the transmitted piezoelectric charges Q20+ and Q20- into at least one pressure signal PS and at least one first ground potential signal MS, and converting the voltages U40+ and U40- into at least one temperature signal TS and at least one second ground potential signal MS'.

[0109] According to the schematic circuit diagrams shown in Figures 11 to 15, the converter unit 6 comprises at least one first charge input contact 63, at least one second charge input contact 65, at least one first voltage input contact 63', at least one second voltage input contact 65', at least one ground potential 64, at least one first signal output contact 66, at least one second signal output contact 66', at least one first ground potential output contact 67, and at least one second ground potential output contact 67'.

[0110] The charge input contacts 63 and 65 have the function of providing electrical contact between the converter unit 6 and the transmission device 5. The charge input contacts 63 and 65 are made of conductive materials such as Cu, Ag, and Au.

[0111] The first charge transmission body 51 establishes electrical contact with the first charge input contact 63. Thus, the first piezoelectric charge Q20+ of the pressure sensor 1P and the group of pressure sensors 1P is connected to the converter unit 6.

[0112] The second charge transmission body 52 establishes electrical contact with the ground potential 64 via the second charge input contact 65. Therefore, the second piezoelectric charge Q20- of the pressure sensor 1P and the group of pressure sensors 1P is at the ground potential 64.

[0113] The first voltage transmitter 51' establishes electrical contact with the first voltage input contact 63'. Thus, the first voltage U40+ of the temperature sensor 1T is applied to the converter unit 6.

[0114] The second voltage transmitter 52' ​​establishes electrical contact with the ground potential 64 via the second voltage input contact 65'. Therefore, the second voltage U40- of the temperature sensor 1T is at the ground potential 64.

[0115] The converter unit 6 converts the first piezoelectric charge Q20+ into an electrically amplified output voltage. The pressure signal PS is the output voltage. The pressure signal PS is proportional to the value of the measured pressure P. Each first piezoelectric charge Q20+ is converted into a pressure signal PS by the converter unit 6.

[0116] The converter unit 6 converts the second piezoelectric charge Q20- into an output voltage. The first ground potential signal MS is the output voltage. The converter unit 6 converts all of the second piezoelectric charge Q20- into the first ground potential signal MS.

[0117] The converter unit 6 converts the first voltage U40+ into an electrically amplified output voltage. The temperature signal TS is the output voltage. The temperature signal TS is proportional to the value of the measured temperature T. The converter unit 6 converts all of the first voltage U40+ into the temperature signal TS.

[0118] The converter unit 6 converts the second voltage U40- into an output voltage. The second ground potential signal MS' is the output voltage. The converter unit 6 converts all of the second voltage U40- into the second ground potential signal MS'.

[0119] The signal output contacts 66, 66' and the ground potential output contacts 67, 67' have the function of providing electrical contact between the converter unit 6 and the evaluation unit 7. The signal output contacts 66, 66' and the ground potential output contacts 67, 67' are made from conductive materials such as Cu, Ag, and Au.

[0120] The pressure signal PS is applied to the first signal output contact 66. The first ground potential output contact 67 establishes electrical contact with the ground potential 64. The first ground potential signal MS is applied to the first ground potential output contact 67.

[0121] The temperature signal TS is applied to the second signal output contact 66'. The second ground potential output contact 67' establishes electrical contact with the ground potential 64. The second ground potential signal MS' is applied to the second ground potential output contact 67'.

[0122] Evaluation Unit 7 The evaluation unit 7 has the function of evaluating the pressure signal PS, the first ground potential signal MS, the temperature signal TS, and the second ground potential signal MS'.

[0123] To this end, the evaluation unit 7 comprises at least one first signal conductor 71, at least one second signal conductor 71', at least one first ground potential conductor 72, at least one second ground potential conductor 72', at least one interface 73, at least one arithmetic unit 74, at least one input unit 75, and at least one output unit 76.

[0124] The signal conductors 71, 71' and the ground potential conductors 72, 72' are made from conductive materials such as Cu, Ag, and Au.

[0125] An electrical contact with the first signal conductor 71 is established at the first signal output contact 66, and an electrical contact with the first ground potential conductor 72 is established at the first ground potential output contact 67. The pressure signal PS is transmitted to the interface 73 via the first signal conductor 71. The first ground potential signal MS is transmitted to the interface 73 via the first ground potential conductor 72.

[0126] An electrical contact with the second signal conductor 71' is established at the second signal output contact 66', and an electrical contact with the second ground potential conductor 72' is established at the second ground potential output contact 67'. The temperature signal TS is transmitted to the interface 73 via the second signal conductor 71'. The second ground potential signal MS' is transmitted to the interface 73 via the second ground potential conductor 72'.

[0127] Interface 73 has the function of digitizing the pressure signal PS, the first ground potential signal MS, the temperature signal TS, and the second ground potential signal MS' into a pressure data element PD, a temperature data element TD, a first ground potential data element MD, and a second ground potential data element MD'.

[0128] To this end, the interface 73 comprises at least one converter element, such as an analog-to-digital converter. The converter element is designed to digitize the pressure signal PS, the first ground potential signal MS, the temperature signal TS, and the second ground potential signal MS' into a pressure data element PD, a temperature data element TD, a first ground potential data element MD, and a second ground potential data element MD'. Each of the pressure data element PD, temperature data element TD, first ground potential data element MD, and second ground potential data element MD' is a binary sequence having a resolution such as 12 bits or 16 bits.

[0129] Interface 73 also includes at least one timer, such as a clock. The timer is designed to provide pressure time point pt to each pressure data element PD, temperature time point tt to each temperature data element TD, first mass potential time point mt to each first mass potential data element MD, and second mass potential time point mt' to each second mass potential data element MD'. Each pressure time point pt, temperature time point tt, first ground potential time point mt, and second ground potential time point mt are binary sequences with a resolution such as 12 bits, 16 bits, etc. Each pressure time point pt, temperature time point tt, first mass potential time point mt, and second mass potential time point mt have a time resolution equal to the reciprocal of twice the measurement frequency f*, according to the Nyquist-Shannon sampling theorem. For measurement frequencies f* at most 1 / 3 of the natural frequency f1 of 1 MHz or more, time points pt and mt are 3 / 2 10 -6 It has a time resolution of more than a second.

[0130] Each pressure data element PD represents a pressure value pv and a pressure time point pt, and the pressure time point pt is associated with the pressure data element PD. Interface 73 digitizes each pressure signal PS into a pressure data element PD having a pressure value pv and provides the associated pressure time point pt to the pressure data element PD.

[0131] Each temperature data element TD represents a temperature value tv and a temperature time point tt, and the temperature time point tt is associated with the temperature data element TD. The interface 73 digitizes each temperature signal TS into a temperature data element TD having a temperature value tv and provides the associated temperature time point tt to the temperature data element TD.

[0132] Each first ground potential data element MD represents a first ground potential value mv and a first ground potential time mt, and the first ground potential time mt is associated with the first ground potential data element MD. The interface 73 digitizes all first ground potential signals MS into first ground potential data elements MD having a first ground potential value mv and provides the associated first ground potential time mt to the first ground potential data element MD.

[0133] All second ground potential data elements MD' represent a second ground potential value mv' and a second ground potential time mt', and the second ground potential time mt' is associated with the second ground potential data element MD'. The interface 73 digitizes all second ground potential signals MS' into second ground potential data elements MD' having a second ground potential value mv', and provides the associated second ground potential time mt' to the second ground potential data element MD'.

[0134] The arithmetic unit 74 includes at least one data storage device and at least one data processor.

[0135] The calculation unit 74 includes at least one evaluation program AP, which is stored in data memory and can be loaded into a data processor. The evaluation program AP loaded into the data processor is designed to evaluate a pressure data element PD, a temperature data element TD, a first mass potential data element MD, and a second mass potential data element MD'.

[0136] The evaluation includes correction for the temperature-dependent nonlinearity of the sensitivity σ of the pressure sensor 1P in at least one pressure data element PD.

[0137] To this end, the evaluation program AP reads the pressure time point pt and temperature time point tt associated with the pressure data element PD and the temperature data element TD.

[0138] Here, the evaluation program AP compares the pressure time point pt and the temperature time point tt with each other. The evaluation program AP combines a pressure data element PD, whose associated pressure time point pt is equal to the temperature time point tt associated with the temperature data element TD, with the temperature data element TD.

[0139] A temperature correction TC having multiple temperature correction data elements TCD is stored in the data memory. Preferably, the temperature correction TC has temperature correction data elements TCD over the entire range of the durable operating temperature of the sensor material 20 from -40°C to +500°C. Each temperature correction data element TCD has a further pressure value pv* and a further temperature value tv* assigned to the further pressure value pv*. The further pressure value pv* is a correction value, thereby causing the pressure value pv of the pressure data element PD at temperature T to deviate from the true pressure value due to the nonlinearity of the temperature dependence of the sensitivity σ of the pressure sensor 1P. Preferably, the temperature correction TC has a temperature T resolution of 0.1°C or less. Preferably, the temperature correction TC has 10 6 It has more than one temperature correction data element (TCD).

[0140] The evaluation program AP reads at least one temperature-corrected data element TCD from data memory. The evaluation program AP identifies a temperature-corrected data element TCD whose associated additional temperature value tv* is equal to the temperature value tv of the combined temperature data element TD (tv* = tv).

[0141] Here, the evaluation program AP subtracts the additional pressure value pv* of the identified temperature-corrected data element TCD from the pressure value pv of the pressure data element PD that it is combined with. The result of the subtraction is the temperature-corrected pressure value pvcor. The subtraction corrects the nonlinearity of the temperature dependence of the sensitivity σ in the pressure value pv of the pressure data element PD. A measurement data element having the temperature-corrected pressure value pvcor is called the temperature-corrected pressure data element PDcor. PDcor(pvcor,tv*=tv)=PD(pv,tv*=tv)-TCD(pv*,tv*=tv)

[0142] The arithmetic unit 74 can be operated via the input unit 75. The verb "operate" means that a human can input a command via the input unit 75, and that command is executed by the arithmetic unit 75. The input unit 75 may be a keyboard or a touch-sensitive screen for inputting commands. Commands can be input as strings via the input unit 75, and an evaluation program AP loaded into the data processor is designed to generate control data for the input command. Thus, the input command may be to switch the sensor device 1 on or off, and the evaluation program AP loaded into the data processor is designed to generate control data for the command, which switches the sensor device 1 on or off.

[0143] Furthermore, the evaluation program AP loaded into the data processor is configured to graphically display the pressure data element PD, temperature data element TD, first ground potential data element MD, and second ground potential data element MD' for evaluation purposes. The output unit 76 may be a screen on which the pressure data element PD, temperature data element TD, first mass potential data element MD, and second mass potential data element MD' are graphically displayed for human use.

[0144] With knowledge of the present invention, those skilled in the art can realize a wide variety of modifications of the shown embodiments. Accordingly, the pressure sensor 1P, temperature sensor 1T, compensator 1K, transmission device 5, and converter unit 6 can be realized within a housing at the locations where pressure P and temperature T are measured. [Explanation of symbols]

[0145] 1. Sensor device 1P Pressure Sensor 1K compensator 1T Temperature Sensor 5. Transmission device 6 Converter Units 7 Evaluation Units 10 Base 11. Base diaphragm D11 Diameter of the base diaphragm F11 Front of the base diaphragm F12 Rear view of the base diaphragm T11 Thickness of the base diaphragm 12 Base opening 13 Support layer 14 Boundary layer 15 Stop layer 20 Sensor Materials D20 Sensor material bottom surface T20 Sensor material thickness 21 First recovery electrode D21 Bottom surface of the first sensor electrode 22 First sensor contact 23 Second sensor electrode D23 Bottom surface of the second sensor electrode 24 Second sensor contact 25 First sensor group conductor 26 First sensor group contact 27 Second sensor group conductor 28 Second sensor group contact 30 Compensator material D30 Compensator material bottom surface T30 Compensator material thickness 31 First compensator electrode 32 First compensator contact 33. Second compensator electrode 34 Second compensator contact 35 First Compensator Group Conductor 36 First compensator group contact 37 Second Compensation Device Group Conductor 38 Second compensator group contact 40 Conductors T40 Conductor thickness 41 Power supply source 42 First compensator contact 44 Second compensator contact 46 First power conductor 48 Second power conductor 51 First charge carrier 51' First voltage transmission unit 52 Second charge carrier 52' Second voltage transmission unit 63 First charge input contact 63' First voltage input contact 64. Ground potential 65 Second charge input contact 65' Second voltage input contact 66 First signal output contact 66' Second signal output contact 67 First ground potential output contact 67' Second ground potential output contact 71 First signal conductor 71' Second signal conductor 72 First ground potential conductor 72' Second ground potential conductor 73 Interface 74 arithmetic units 75 Input Units 76 Output Units AP Evaluation Program BB section path BB section path CC section path DD section path DXY First Horizontal Distance DXY' Second horizontal distance ΔR Resistance change f1 Natural frequency f* measurement frequency I current L linear curve MD First Ground Potential Data Element MD' Second ground potential data element MS First Ground Potential Signal MS' Second ground potential signal mt First ground potential point mt' Second ground potential point mv First ground potential value mv' Second ground potential value P pressure P+- pyroelectric charge P20+ First pyroelectric charge P20 - Second pyroelectric charge p30+ First pyroelectric charge P30 - Second pyroelectric charge PD pressure data elements PDcor temperature-compensated pressure data element PS pressure signal pt pressure point pv pressure value pv* Further pressure values pvcor temperature-compensated pressure value Q20+ First piezoelectric charge Q20 - Second piezoelectric charge σ Sensitivity T temperature TC temperature correction TCD temperature correction data elements TS temperature signal TV temperature value TV* Further temperature values tt temperature point U40+, U40- Voltage X horizontal axis XY horizontal plane Y horizontal axis Z vertical axis

Claims

1. A sensor device (1) designed to measure pressure (P), comprising at least one substrate (10) and at least one sensor material (20), wherein the substrate (10) is formed in several areas as a substrate diaphragm (11), the substrate diaphragm (11) is designed to sense the pressure (P) to be measured, and the substrate diaphragm (11) can be flexed under the influence of the pressure (P), wherein the sensor material (20) is arranged in several areas on the substrate diaphragm (11), and the sensor material (20) is the substrate diaphragm A sensor device (1) characterized in that it generates piezoelectric charges (Q20+, Q20-) under the influence of the deflection of an earphram (11), the magnitude of the generated piezoelectric charges (Q20+, Q20-) is proportional to the value of the pressure (P) to be measured, the sensor device (1) is also designed to measure temperature (T), and for this purpose comprises at least one conductor (40), the conductor (40) is arranged on the substrate (10), and the measured temperature (T) causes a change (ΔR) in the resistance of the conductor (40), the change in resistance (ΔR) is proportional to the value of the temperature (T) to be measured.

2. The sensor device (1) according to claim 1, characterized in that the sensor device (1) comprises at least one power source (41), the power source (41) supplies a direct current (I), the power source (41) establishes electrical contact with the conductor (40), the direct current (I) flows through the conductor (40), and the voltage (U40+, U40-) is generated from the change in the resistance (ΔR) of the conductor (40) and the direct current (I), and the magnitude of the voltage (U40+, U40-) is proportional to the value of the temperature (T) to be measured.

3. The sensor device (1) according to claim 1 or 2, characterized in that the base diaphragm (11) has a thickness (T11) along the vertical axis (Z) and a diameter (D11) in a horizontal plane (XY) perpendicular thereto, the thickness (T11) of the base diaphragm (11) is 20 μm or less, preferably 10 μm or less, preferably 5 μm or less, the diameter (D11) of the base diaphragm (11) is 300 μm or less, preferably 200 μm or less, preferably 100 μm or less, and the ratio of the thickness (T11) to the diameter (D11) of the base diaphragm (11) is selected such that the sensor device (1) exhibits a natural frequency (f1) of 1 MHz or higher.

4. The sensor device (1) according to any one of claims 1 to 3, characterized in that the conductor (40) is arranged on the outside of the substrate diaphragm (11).

5. The sensor device (1) according to any one of claims 1 to 4, characterized in that the substrate (10) and the substrate diaphragm (11) are made from silicon.

6. The sensor device (1) according to any one of claims 1 to 5, characterized in that the sensor device (1) comprises at least one compensator material (30), the compensator material (30) is arranged in several areas on the substrate (10), the sensor material (20) generates pyroelectric charges (P20+, P20-) under the influence of a temperature change (ΔT), the compensator material (30) generates pyroelectric charges (P30+, P30-) under the influence of the temperature change (ΔT), and the pyroelectric charges (P30+, P30-) generated by the compensator material (30) cancel out the pyroelectric charges (P20+, P20-) generated by the sensor material (20).

7. The sensor device (1) according to claim 6, characterized in that the compensator material (30) is arranged outside the base diaphragm (11).

8. The sensor material (20) generates piezoelectric charges (Q20+, Q20-) and pyroelectric charges (P20+, P20-) on a plurality of surfaces; the sensor device (1) comprises a plurality of sensor electrodes (21, 23), the sensor electrodes (21, 23) are arranged on the surface of the sensor material (20) and tap the piezoelectric charges (Q20+, Q20-) and pyroelectric charges (P20+, P20-); the substrate diaphragm (11), the sensor material (20) arranged on the substrate diaphragm (11), and the sensor electrodes (21, 23) arranged on the surface of the sensor material (20) form a pressure sensor (1P). The sensor device (1) according to claim 6 or 7, characterized in that the compensator material (30) generates the pyroelectric charges (P20+, P20-) on a plurality of surfaces, the sensor device (1) comprises a plurality of compensator electrodes (31, 33), the compensator electrodes (31, 33) are arranged on the surface of the compensator material (30) and tap the pyroelectric charges (K30+, K30-), and the region of the substrate (10) on which the compensator material (30) is located, the compensator material (30) arranged on the substrate (10), and the compensator electrodes (31, 33) arranged on the surface of the compensator material (30) form a compensator (1K).

9. Multiple substrate diaphragms (11) are formed in several areas of the substrate (10), each of the multiple substrate diaphragms (11) is designed to sense the pressure (P) to be measured, the pressure (P) causes the multiple substrate diaphragms (11) to flex, a sensor material (20) is placed on each of the multiple substrate diaphragms (11) on the front surface (F11) of the substrate diaphragms (11), and the sensor material (20) is piezoelectric under the influence of the flexing of the substrate diaphragms (11). The sensor device (1) according to any one of claims 1 to 8, characterized in that it generates charges (Q20+, Q20-), a plurality of sensor electrodes (21, 23) are arranged on the surface of the sensor material (20) on each of the plurality of substrate diaphragms (11) to tap the piezoelectric charges (Q20+, Q20-), and the sensor device (1) comprises a plurality of sensor group conductors (25, 27), and the sensor electrodes (21, 23) are electrically connected in series via the sensor group conductors (25, 27).

10. Multiple regions having compensator material (30) are arranged on the substrate (10), a temperature change (ΔT) acts equally on the sensor material (20) and the compensator material (30), and under the influence of the temperature change (ΔT), the sensor material (20) generates pyroelectric charges (P20+, P20-), and the compensator material (30) generates pyroelectric charges (P30+, P30-), and the sensor electrodes (21, 23) react to the piezoelectric charge (Q20+, Q20-) of the sensor material (20) and the pyroelectric charge (P The sensor device (1) according to claim 9, characterized in that the sensor device (1) comprises a plurality of compensator group conductors (35, 37), and the compensator electrodes (31, 33) are arranged on the surface of the compensator material (30) on each of the plurality of regions having the compensator material (30), and the pyroelectric charges (P30+, P30-) of the compensator material (30) are tapped, and the sensor device (1) comprises a plurality of compensator group conductors (35, 37), and the compensator electrodes (31, 33) are electrically connected in series via the compensator group conductors (25, 27).

11. The piezoelectric charge (Q20+, Q20-) of the sensor material (20) includes a first piezoelectric charge (Q20+) and a second piezoelectric charge (Q20-), the pyroelectric charge (P20+, P20-) of the sensor material (20) includes a first pyroelectric charge (P20+) and a second pyroelectric charge (P20-), the sensor electrodes (21, 23) include a first sensor electrode (21) and a second sensor electrode (23), and the first sensor electrode (21) taps the first piezoelectric charge (Q20+) and the first pyroelectric charge (P20+) of the sensor material (20). The second sensor electrode (23) taps the second piezoelectric charge (Q20-) and the second pyroelectric charge (P20-) of the sensor material (20), the pyroelectric charges (P30+, P30-) of the compensator material (30) include the first pyroelectric charge (P30+) and the second pyroelectric charge (P30-), the compensator electrodes (31, 33) include the first compensator electrode (31) and the second compensator electrode (33), the first compensator electrode (31) taps the first pyroelectric charge (P30+) of the compensator material (30), and the second compensator The compensator electrode (33) taps the second pyroelectric charge (P30-) of the compensator material (30), the sensor device (1) comprises at least one transmission device (5), the transmission device (5) comprises a first charge transmitter (51) and a second charge transmitter (52), the first charge transmitter (51) establishes electrical contact with the first sensor electrode (21) and the second compensator electrode (33), and the first piezoelectric charge (Q20+) and first pyroelectric charge (P20+) of the sensor material (20), and the second pyroelectric charge ( P30-) is applied to the first charge transmitter (51), the magnitude of the first pyroelectric charge (P20+) of the sensor material (20) is equal to the magnitude of the second pyroelectric charge (P30-) of the compensator material (30), and the pyroelectric charges (P20+, P30-) are canceled out by the first charge transmitter 51, the second charge transmitter (52) establishes electrical contact with the second sensor electrode (23) and the first compensator electrode (31), and the second piezoelectric charge (Q20-) and the second pyroelectric charge (P20-) of the sensor material (20),The sensor device (1) according to claim 6 or 10, characterized in that the first pyroelectric charge (P30+) of the compensator material (30) is applied to the second charge transmitter (52), and the magnitude of the second pyroelectric charge (P20-) of the sensor material (20) is equal to the magnitude of the first pyroelectric charge (P30+) of the compensator material (30), and the pyroelectric charges (P20-, P30+) are canceled out by the second charge transmitter 51.

12. The piezoelectric charge (Q20+, Q20-) of the sensor material (20) includes a first piezoelectric charge (Q20+), the voltage (U40+, U40-) of the conductor (40) includes a first voltage (U40+), the sensor device (1) comprises at least one interface (73), the interface (73) is designed to digitize a pressure signal (PS) corresponding to the first piezoelectric charge (Q20+) into a pressure data element (PD) having a pressure value (pv), and the interface The sensor device (1) according to claim 2, characterized in that - the face (73) is designed to provide an associated pressure time point (pt) to the pressure data element (PD), the interface (73) is designed to digitize a temperature signal (TS) corresponding to the first voltage (U40+) to a temperature data element (TD) having a temperature value (tv), and the interface (73) is designed to provide an associated temperature time point (tt) to the temperature data element (TD).

13. The sensor device (1) according to claim 12, characterized in that the sensor device (1) comprises at least one arithmetic unit (74), the arithmetic unit (74) comprises at least one data memory and at least one data processor, the arithmetic unit (74) comprises at least one evaluation program (AP), the evaluation program (AP) is stored in the data memory and can be loaded into the data processor, and the evaluation program (AP) loaded into the data processor is designed to read the pressure data element (PD) and the temperature data element (TD), and the pressure time point (pt) associated with the pressure data element (PD) and the temperature time point (tt) associated with the temperature data element (TD).

14. The sensor device (1) according to claim 13, characterized in that the evaluation program (AP) loaded into the data processor is designed to combine a pressure data element (PD) in which the associated pressure time point (pt) is equal to the temperature time point (tt) associated with the temperature data element (TD) with the temperature data element (TD).

15. The calculation unit (74) comprises at least one temperature correction data element (TCD), the temperature correction data element (TCD) is stored in the data memory, the temperature correction data element (TCD) indicates a further pressure value (tv*) and a further temperature value (tv*) assigned to the further pressure value (pv*), the evaluation program (AP) loaded into the data processor is designed to read the temperature correction data element (TCD), and the evaluation program (AP) loaded into the data processor is designed to combine the associated further temperature values ​​(tv*) The sensor device (1) according to claim 14, characterized in that it is designed to identify a temperature correction data element (TCD) equal to the temperature value (tv) of the temperature data element (TD), and the evaluation program (AP) loaded into the data processor is designed to subtract the additional pressure value (pv*) of the identified temperature correction data element (TCD) from the pressure value (pv) of the pressure data element (PD) that is combined with it, wherein the subtraction corrects the temperature-dependent nonlinearity of the sensitivity (σ) of the pressure value (pv) of the pressure data element (PD).

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