Sulfonium salt, chemically amplified resist composition, and patterning method
JP2026169026APending Publication Date: 2026-10-16SHIN ETSU CHEMICAL CO LTD
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Patent Information
- Application Number
- JP2025062663
- Authority / Receiving Office
- JP · JP
- Patent Type
- Applications
- Current Assignee / Owner
- Filing Date
- 2025-04-04
- Publication Date
- 2026-10-16
AI Technical Summary
Benefits of technology
【0020】 本発明のスルホニウム塩を光酸発生剤として含む化学増幅レジスト組成物を用いてパターン形成を行った場合、高感度であり、酸拡散抑制能に優れ、LWR、CDU、MEF、EL、DOF等のリソグラフィー性能が改善され、微細パターン形成時のレジストパターンの倒れを抑制することができる。
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Abstract
This invention provides a sulfonium salt used in a chemically amplified resist composition that exhibits excellent solvent solubility, high sensitivity, high contrast, and superior lithography performance such as LWR, CDU, MEF, EL, and DOF in photolithography using high-energy rays; a chemically amplified resist composition containing the sulfonium salt as a photoacid generator; and a pattern formation method using the chemically amplified resist composition. [Solution] A sulfonium salt represented by the following formula (1). TIFF2026169026000697.tif53140 (In the formula, Z - (This refers to an aromatic sulfonic acid anion having at least one cyclic structure.)
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