Sulfonium salt type monomer, polymer, chemically amplified resist composition, and patterning method

Abstract

This invention provides a sulfonium salt type monomer used in a chemically amplified resist composition that exhibits excellent solvent solubility, high sensitivity, high contrast, and superior lithography performance such as LWR, CDU, EL, and DOF in photolithography using high-energy rays; a polymer containing repeating units derived from the sulfonium salt type monomer; a chemically amplified resist composition containing the polymer; and a method for pattern formation using the chemically amplified resist composition. [Solution] A sulfonium salt type monomer represented by the following formula (A). TIFF2026169035000585.tif46121 (in the formula, Z - It is a fluoroalkanesulfonic acid anion having a polymerizable group.