Method and structure for high-strength asymmetric dielectrics in hybrid coupling

By employing asymmetric dielectric hybrid bonding in semiconductor devices, the challenges of pitch scaling and bonding strength are addressed, enabling reduced pitch and higher metal pad density for advanced semiconductor devices.

JP2026530481APending Publication Date: 2026-09-08APPLIED MATERIALS INC
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Patent Information

Application Number
JP2026513282
Authority / Receiving Office
JP · JP
Patent Type
Applications
Current Assignee / Owner
Priority Date
2023-09-01
Filing Date
2024-08-29
Publication Date
2026-09-08

AI Technical Summary

Technical Problem

Conventional hybrid bonding techniques face limitations in pitch scaling, leading to insufficient bonding strength and reduced dielectric surface area, which restricts further miniaturization and integration of semiconductor devices.

Method used

A semiconductor device structure involving asymmetric dielectrics is formed by hybrid bonding, where a first structure with a first dielectric layer and copper-containing material is bonded to a second structure with a different dielectric layer and copper-containing material, enhancing bonding strength through asymmetric dielectric junctions.

Benefits of technology

The method increases bonding strength and allows for reduced pitch and higher metal pad density between wafers, facilitating the development of advanced semiconductor devices with improved performance and miniaturization.

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Abstract

A first structure for semiconductor devices having a dielectric film on its upper surface can be used to form a semiconductor device consisting of a hybrid junction structure in which the dielectric surface area and the pitch of the metal studs are reduced. The upper surface of the dielectric film of the first structure can be hybrid-junctioned to a dielectric layer of the second structure. The dielectric film of the first structure and the dielectric layer of the second structure can be made of different dielectrics. In this way, the hybrid junction of the two structures includes a hybrid junction of asymmetric dielectrics.
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