Nanostructure-based display devices with improved light extraction efficiency

Abstract

Embodiments of a display device are described below. The display device includes a backlight unit having a light source and a liquid crystal display (LCD) module. The LCD module includes a nanostructure-based color conversion (NS-based CC) layer and a light extraction layer. The NS-based CC layer is configured to receive primary light having a first peak wavelength from the light source, convert a portion of the primary light, and emit a first portion of secondary light having a second peak wavelength. The second peak wavelength is different from the first peak wavelength. The light extraction layer is optically coupled to the NS-based CC layer and is configured to prevent total internal reflection of the second portion of the secondary light. The light extraction layer has patterned features having one or more dimensions on a nanometer scale.

Description

[Technical field]

[0001] 2. Background of the Invention Field The present invention relates to displays that include color conversion layers having luminescent nanostructures such as quantum dots (QDs). [Background technology]

[0002] background Luminescent nanostructures (NS), such as quantum dots (QDs), represent a type of phosphor that has the ability to emit light in a single spectral peak with a narrow linewidth and produce highly saturated colors. It is possible to tune the emission wavelength based on the size of the NS. NSs are used to make NS films that can be used as color conversion (CC) layers (also called color down-conversion layers) in display devices (e.g., liquid crystal display (LCD) devices, organic light-emitting diode (OLED) displays). The use of NS-based CC layers in emissive displays can improve system efficiency by down-converting white, blue, or ultraviolet (UV) light to light in the red and / or green wavelength range before the light passes through color filters. The use of NS-based CC layers can reduce the loss of light energy due to filtering. Summary of the Invention [Problem to be solved by the invention]

[0003]

[0003] NS-based CC layers typically have a planar top surface from which light is emitted. In addition, these layers typically have a higher refractive index than the medium into which light is emitted, so that a significant amount of the light generated by NS is reflected back into the CC layer by total internal reflection. Even though the light can escape from the planar top surface after multiple total internal reflections, the delay in emission caused by total internal reflection can cause significant optical losses in the display device. Therefore, one of the challenges in making NS-based displays is to achieve high light extraction efficiency (e.g., greater than 50%, 60%, 70%, or 80%) for the high external quantum efficiency of NS-based displays. [Means for solving the problem]

[0004] overview

[0004] The present disclosure provides an exemplary high-efficiency NS-based display device with a light extraction layer for improved light extraction from the NS-based CC layer. The present disclosure also provides an exemplary low-cost method for fabricating the high-efficiency NS-based display device.

[0005]

[0005] In some embodiments, the light extraction layer can be configured to provide directionality to the light emitted from the NS-based CC layer of the NS-based display device and to substantially reduce or prevent total internal reflection of the emitted light within the NS-based CC layer, thereby increasing the light extraction efficiency of the NS-based display device (e.g., greater than 50%, 60%, 70%, or 80%). The light extraction layer can substantially reduce or prevent total internal reflection by providing a non-uniform interface between the NS-based CC layer and a medium through which the light from the NS-based CC layer can be internally emitted. The non-uniform interface can be provided by nanostructured features of the light extraction layer. The nanostructured features can be transfer printed in a repeating pattern, a non-repeating pattern, and / or a random pattern on the substrate of the light extraction layer or on the surface of the medium through which the light from the NS-based CC layer can be internally emitted.

[0006]

[0006] In some embodiments, the nanostructure features of the light extraction layer and / or the substrate include a material similar to the matrix material of the NS-based CC layer to provide a better index match with the NS-based CC layer than the index match of the NS-based CC layer with the medium. Also, the better index match can substantially reduce or prevent total internal reflection of the emitted light within the NS-based CC layer. The present disclosure further provides various embodiments for improving the display performance, such as color gamut coverage, of an NS-based display device by substantially reducing or eliminating unwanted light leakage through one or more pixels of the display device.

[0007] According to some embodiments, a display device includes a backlight unit having a light source and a liquid crystal display (LCD) module. The LCD module includes a nanostructure-based color conversion (NS-based CC) layer and a light extraction layer. The NS-based CC layer is configured to receive primary light from the light source having a first peak wavelength and convert a portion of the primary light to emit a first portion of secondary light having a second peak wavelength. The second peak wavelength is different from the first peak wavelength. The light extraction layer is optically coupled to the NS-based CC layer and configured to prevent total internal reflection of the second portion of the secondary light. The light extraction layer has patterned features having one or more dimensions on the nanometer scale.

[0008] According to some embodiments, a method of manufacturing a display device includes forming a first portion and a second portion of a liquid crystal display (LCD) module, disposing the second portion of the LCD module on the first portion of the LCD module, and disposing a display screen on the second portion of the LCD module. Forming the first portion includes disposing a liquid crystal solution layer on a backlight unit (BLU) of the display device and disposing a polarizing filter on the liquid crystal solution layer. Forming the second portion includes forming a light extraction layer on an optically transparent substrate and forming a nanostructure-based color conversion (NS-based CC) layer on the light extraction layer.

[0009]

[0009] Further features and advantages of the present invention, as well as the structure and operation of various embodiments of the present invention, are described in detail below with reference to the accompanying drawings. It should be noted that the present invention is not limited to the specific embodiments described herein. Such embodiments are presented herein for illustrative purposes only. Additional embodiments will be apparent to those skilled in the relevant art based on the teachings contained herein.

[0010] BRIEF DESCRIPTION OF THE DRAWINGS

[0010] The accompanying drawings, which are incorporated in and form a part of this specification, illustrate the present embodiment and, together with the description, serve to explain the principles of the present embodiment and to enable those skilled in the relevant art to make and use the present embodiment. [Brief description of the drawings]

[0011] [Figure 1] 1 is an exploded cross-sectional view of a liquid crystal display (LCD) device with a light extraction layer according to some embodiments. [Diagram 2] 1 is an exploded cross-sectional view of a liquid crystal display (LCD) device with a light extraction layer according to some embodiments. [Diagram 3]

[0012] FIG. 2 is a flow diagram of a method for manufacturing a liquid crystal device with a light extraction layer according to some embodiments. [Figure 4]

[0013] 1 is a schematic cross-sectional view of a nanostructure according to some embodiments. [Diagram 5]

[0014] 1 is a schematic diagram of a nanostructured film according to some embodiments. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0012]

[0015] Features and advantages of the present invention will become more apparent from the detailed description set forth below when taken in conjunction with the drawings, in which like reference numbers identify corresponding elements throughout. In the drawings, like reference numbers generally represent identical, functionally similar, and / or structurally similar elements. The drawing in which an element first appears is indicated by the leftmost digit(s) of the corresponding reference number. Unless otherwise indicated, the drawings provided throughout this disclosure should not be construed as drawings to scale.

[0013] Detailed Description of the Invention

[0016] While specific configurations and arrangements may be discussed, it should be understood that this is done for illustrative purposes only. A person skilled in the relevant art will recognize that other configurations and arrangements can be used without departing from the spirit and scope of the present invention. It will be apparent to a person skilled in the relevant art that the present invention can be used in a variety of other applications other than those specifically described herein. It should be recognized that the specific embodiments shown and described herein are examples and are in no way intended to limit the scope of this application.

[0014]

[0017] It should be noted that references herein to "one embodiment," "embodiment," "exemplary embodiment," and the like, represent that the embodiment being described may include a particular feature, structure, or characteristic, but that all embodiments may not necessarily include the particular feature, structure, or characteristic. Moreover, such phrases do not necessarily refer to the same embodiment. Furthermore, when a particular feature, structure, or characteristic is described in connection with an embodiment, it is within the knowledge of one of ordinary skill in the art to achieve such feature, structure, or characteristic in connection with other embodiments, whether or not explicitly described.

[0015]

[0018] All numbers in this description expressing amounts, ratios of ingredients, physical properties of ingredients, and / or uses should be understood to be modified by the word "about" unless expressly indicated otherwise.

[0016]

[0019] In some embodiments, the term "display device" refers to an arrangement of elements that allows for the visual representation of data on a display screen. Suitable display screens can include a variety of flat, curved, or other shaped screens, films, sheets, or other structures for visually displaying information to a user. The display devices described herein can be included in display systems, including, for example, liquid crystal displays (LCDs), televisions, computers, mobile phones, smartphones, personal digital assistants (PDAs), gaming consoles, electronic reading devices, digital cameras, tablets, wearable devices, automobile navigation systems, and the like.

[0017]

[0020] As used herein, the term "about" indicates that a given quantity value varies by ±10% of the value. For example, "about 100 nm" encompasses a size range of 90 nm to 110 nm.

[0018]

[0021] As used herein, the term "substantially" indicates that a given quantity value varies by ±1% to ±5% of the value.

[0019]

[0022] In some embodiments, the terms "forming a reaction mixture" or "forming a mixture" refer to combining at least two components in a container under conditions suitable for the components to react with each other to form a third component.

[0020]

[0023] In some embodiments, the terms "light guide plate," "light pipe," or "light guide panel" are used interchangeably and refer to an optical component suitable for directing electromagnetic radiation (light) from one location to another.

[0021]

[0024] In some embodiments, the term "optically coupled" means that components are positioned so that light can pass from one component to another without substantial interference.

[0022]

[0025] The term "nanostructure" as used herein refers to a structure having at least one region or characteristic dimension of less than about 500 nm. In some embodiments, the nanostructure has a dimension of less than about 200 nm, less than about 100 nm, less than about 50 nm, less than about 20 nm, or less than about 10 nm. Typically, the region or characteristic dimension is along the smallest axis of the structure. Examples of such structures include nanowires, nanorods, nanotubes, branched nanostructures, nanotetrapods, tripods, bipods, nanocrystals, nanodots, QDs, nanoparticles, and the like. Nanostructures can be, for example, substantially crystalline, substantially monocrystalline, polycrystalline, amorphous, or combinations thereof. In some embodiments, each of the three dimensions of the nanostructure has a dimension of less than about 500 nm, less than about 200 nm, less than about 100 nm, less than about 50 nm, less than about 20 nm, or less than about 10 nm.

[0023]

[0026] The term "QD" or "nanocrystal" as used herein refers to a nanostructure that is substantially monocrystalline. A nanocrystal has at least one region or characteristic dimension that is less than about 500 nm and down to about 1 nm in size. The terms "nanocrystal", "QD", "nanodot" and "dot" are readily understood by those skilled in the art to represent similar structures and are used interchangeably herein. The present invention also encompasses the use of polycrystalline or amorphous nanocrystals.

[0024]

[0027] The term "heterostructure" when used with respect to a nanostructure refers to a nanostructure characterized by at least two different and / or distinguishable material types. Typically, one region of the nanostructure comprises a first material type, while a second region of the nanostructure comprises a second material type. In certain embodiments, the nanostructure comprises a core of a first material and at least one shell of a second (or third, etc.) material, where the different material types are distributed radially, for example, around the long axis of a nanowire, the long axis of an arm of a branched nanowire, or the center of a nanocrystal. The shell can, but need not, completely cover the adjacent material to be considered a shell or for the nanostructure to be considered a heterostructure; for example, a nanocrystal characterized by a core of one material covered by small islands of a second material is a heterostructure. In other embodiments, the different material types are distributed at different locations within the nanostructure, for example, along the main (long) axis of the nanowire or along the long axis of an arm of a branched nanowire. Different regions in a heterostructure can comprise entirely different materials, or the different regions can comprise a base material (eg, silicon) with different dopants or different concentrations of the same dopant.

[0025]

[0028] As used herein, the term "diameter" of a nanostructure refers to the diameter of a cross section perpendicular to a first axis of the nanostructure, the first axis having the greatest difference in length with respect to the second and third axes (the second and third axes being two axes that are approximately equal in length to each other). The first axis is not necessarily the longest axis of the nanostructure, for example, in the case of a disk-shaped nanostructure, the cross section is a substantially circular cross section perpendicular to the short longitudinal axis of the disk. If the cross section is not circular, the diameter is the average of the long and short axes of the cross section. In the case of elongated or high aspect ratio nanostructures, such as nanowires, the diameter is measured across a cross section perpendicular to the longest axis of the nanowire. In the case of a spherical nanostructure, the diameter is measured from one side to the other through the center of the sphere.

[0026]

[0029] The term "crystalline" or "substantially crystalline" when used with respect to nanostructures refers to the fact that the nanostructure typically exhibits long-range order across one or more dimensions of the structure. It will be understood by those skilled in the art that the term "long-range order" depends on the actual dimensions of the particular nanostructure, since the order of a single crystal cannot extend beyond the boundaries of the crystal. In this case, "long-range order" refers to substantial order across at least most of the dimensions of the nanostructure. In some cases, the nanostructure may have an oxide or other coating, or may be composed of a core and at least one shell. In such cases, it will be recognized that the oxide, shell, or other coating may, but need not, exhibit such order (e.g., the order may be amorphous, polycrystalline, or otherwise). In such cases, the phrases "crystalline", "substantially crystalline", "substantially monocrystalline", or "monocrystalline" refer to the central core of the nanostructure (excluding any coating layers or shells). The terms "crystalline" or "substantially crystalline" as used herein are intended to encompass structures that contain various defects, stacking faults, atomic substitutions, and the like, so long as the structures exhibit substantial long-range order (e.g., order that is at least about 80% greater than the length of at least one axis of the nanostructure or its core). In addition, it will be recognized that interfaces between the core and the exterior of the nanostructure, or between the core and an adjacent shell, or between a shell and an adjacent second shell, can include non-crystalline regions and can even be amorphous. This does not prevent a nanostructure from being crystalline or substantially crystalline as defined herein.

[0027]

[0030] The term "monocrystalline" when used in reference to a nanostructure indicates that the nanostructure is substantially crystalline and comprises substantially a single crystal. When used in reference to a nanostructure heterostructure comprising a core and one or more shells, "monocrystalline" indicates that the core is substantially crystalline and comprises substantially a single crystal.

[0028]

[0031] The term "ligand" as used herein refers to a molecule capable of interacting (whether weakly or strongly) with one or more faces of a nanostructure, for example, through covalent interactions, ionic interactions, van der Waals interactions, or other molecular interactions with the surface of the nanostructure.

[0029]

[0032] The term "quantum yield" (QY) as used herein refers to the ratio of emitted photons to absorbed photons by, for example, a nanostructure or a population of nanostructures. As known in the art, quantum yield is typically determined by comparative methods using well-characterized standards with known quantum yield values.

[0030]

[0033] As used herein, the term "primary emission peak wavelength" refers to the wavelength at which the emission spectrum exhibits maximum intensity.

[0031]

[0034] As used herein, the term "full width at half-maximum (FWHM)" refers to a measure of the spectral width. In the case of an emission spectrum, FWHM refers to the width of the emission spectrum at half the peak intensity value.

[0032]

[0035] The term Forster radius as used herein is also referred to in the art as Forster distance.

[0033]

[0036] The terms "luminance" and "brightness" are used interchangeably herein and refer to the photometric measure of luminous intensity per unit area of ​​a light source or illuminated surface.

[0034]

[0037] The terms "specular reflector," "specular reflective surface," and "reflective surface" are used herein to refer to elements, materials, and / or surfaces capable of specular reflection.

[0035]

[0038] The term "specular reflection" is used herein to refer to the mirror-like reflection of light (or other types of waves) from a surface when incident light strikes the surface.

[0036]

[0039] The term "nanostructured (NS) film" is used herein to refer to a film having luminescent nanostructures.

[0037]

[0040] The term "red subpixel" is used herein to refer to a region of a pixel that emits light having a primary emission peak wavelength in the red wavelength region of the visible spectrum. In some embodiments, the red wavelength region can include wavelengths in the range of about 620 nm to about 750 nm.

[0038]

[0041] The term "green subpixel" is used herein to refer to a region of a pixel that emits light having a primary emission peak wavelength in the green wavelength region of the visible spectrum. In some embodiments, the green wavelength region can include wavelengths ranging from about 495 nm to about 570 nm.

[0039]

[0042] The term "blue subpixel" is used herein to refer to a region of a pixel that emits light having a primary emission peak wavelength in the blue wavelength region of the visible spectrum. In some embodiments, the blue wavelength region can include wavelengths ranging from about 435 nm to about 495 nm.

[0040]

[0043] The term "subpixel emitting surface" is used herein to refer to the uppermost surface of the subpixel from which light is emitted toward the viewing screen of a display device.

[0041]

[0044] Published patents, patent applications, websites, company names, and scientific literature referenced herein are incorporated herein by reference in their entirety to the same extent as if each were specifically and individually indicated to be incorporated by reference. Any conflict between any reference cited herein and the specific teachings of this specification shall be resolved in favor of the latter. Similarly, any conflict between the art-understood definition of a word or phrase and the definition of a word or phrase specifically taught herein shall be resolved in favor of the latter.

[0042]

[0045] Unless otherwise defined, technical and scientific terms used herein have the meaning commonly understood by one of ordinary skill in the art to which this application belongs. Reference is made herein to various methods and materials known to those skilled in the art.

[0043] Exemplary embodiments of a display device

[0046] 1 illustrates a schematic exploded cross-sectional view of an LCD display device 100 with a light extraction layer 140, according to some embodiments. The display diagram in FIG. 1 is shown for illustrative purposes and may not be to scale. The LCD display device 100, according to some embodiments, can include a backlight unit (BLU) 102 and an LCD module 104.

[0044]

[0047] The BLU 102 can include an optical cavity 112 and an array of LEDs 110 (e.g., white LEDs, blue LEDs, or a combination thereof) coupled to the optical cavity 112. The optical cavity 112 can include a top side 103, a bottom side 105, a sidewall 107, and an enclosed volume enclosed by the top side 103, the bottom side 105, and the sidewall 107. The LEDs 110 can be coupled to a top surface 105a of the bottom side 105 within the enclosed volume. The LEDs 110 can be configured to provide primary light (e.g., blue or white light) that can be processed through the LCD module 104 and then transmitted to and dispersed across the display screen 130 of the LCD display device 100. In some embodiments, the LEDs 110 can include blue LEDs that emit light in the range of about 440 nm to about 470 nm. In some embodiments, the LEDs 110 may include white LEDs emitting light in the range of about 440 nm to about 700 nm, or other possible ranges of light wavelengths. In some embodiments, the array of LEDs 110 may include a two-dimensional array of LEDs spread across an area of ​​the top surface 105a, which may be equal to the surface area of ​​the display screen 130.

[0045]

[0048] It should be noted that even though two side walls 107 are shown in FIG. 1, the optical cavity 112 can include any number of side walls 107 according to various embodiments. For example, the optical cavity 112 can have a rectangular parallelepiped shape and can include four side walls similar to the side wall 107. The optical cavity 112 is not limited to being rectangular or having other shapes with straight sides. The optical cavity 112 can be configured to be any type of geometric shape, such as, but not limited to, cylindrical, trapezoidal, spherical, or elliptical, according to various embodiments, without departing from the spirit and scope of the present invention. It should also be noted that the rectangular cross-sectional shape of the optical cavity 112, as illustrated in FIG. 1, is for illustrative purposes and is not limiting. The optical cavity 112 can have other cross-sectional shapes (e.g., trapezoidal, oval, diamond) according to various embodiments, without departing from the spirit and scope of the present invention.

[0046]

[0049] The top side 103 of the light cavity 112 can be configured to be an optically diffusive and transmissive layer such that light from the LEDs 110 can exit the light cavity 112 through the top side 103 with a substantially uniform distribution of brightness across the entire top surface 103a of the top side 103. In some embodiments, the top side 103 can include optically transparent and optically translucent regions strategically disposed on the LEDs 110 to provide a substantially uniform distribution of brightness of the light exiting the top side 103. In another embodiment, the top side 103 can include pores of various sizes with diameters and optically translucent regions strategically disposed to provide a substantially uniform distribution of brightness of the light exiting the top side 103.

[0047]

[0050] The bottom side 105 and / or sidewall 107 can be constructed from one or more materials (e.g., metals, non-metals, and / or alloys) configured to have a specularly reflective top surface 105a and / or a specularly reflective sidewall inner surface 107a, respectively. For example, the top surface 105a and / or the sidewall inner surface 107a can be a mirror-like surface having mirror-like reflective properties. In some embodiments, the top surface 105a and / or the sidewall inner surface 107a can be fully specular or partially specular and partially scattering. In some other embodiments, the top surface 105a and / or the sidewall inner surface 107a include a diffuse reflector.

[0048]

[0051] In an alternative embodiment, the optical cavity 112 may include a specular reflector 109 coupled to the sidewall inner surface 107a. The specular reflector 109 may be coupled to the sidewall inner surface 107a using an optically clear adhesive. Optically clear adhesives may include tapes, various glues, polymer compositions such as silicones, and the like. Additional optically clear adhesives may include, by way of various examples, various polymers including, but not limited to, poly(vinyl butyral), poly(vinyl acetate), epoxies, and urethanes; silicones and silicone derivatives including, but not limited to, polyphenylmethylsiloxane, polyphenylalkylsiloxane, polydiphenylsiloxane, polydialkylsiloxane, fluorinated silicones, and vinyl- and hydride-substituted silicones; acrylic polymers and copolymers formed from monomers including, but not limited to, methyl methacrylate, butyl methacrylate, and lauryl methacrylate; styrene-based polymers; and polymers crosslinked with difunctional monomers, such as divinylbenzene.

[0049]

[0052] The specular reflective top surface 105a and the sidewall inner surface 107a and the specular reflector 109 can substantially minimize absorption of light from the LED 110 through the bottom side 105 and / or the sidewall 107, thus substantially minimizing loss of brightness within the optical cavity 112 and increasing the light output efficiency of the BLU 102.

[0050]

[0053] In an alternative embodiment, the BLU 102 may further include one or more brightness enhancing films (BEFs) (not shown) disposed between the optical cavity 112 and the LCD module 104. The one or more BEFs may have reflective and / or refractive films, reflective polarizing films, light extraction features, light recycling features, prismatic films, grooved films, grooved prismatic films, prisms, pitches, grooves, or other suitable brightness enhancing features. The brightness enhancing features of the BEFs may be configured to reflect a portion of the primary light (e.g., blue light from the optical cavity 112) back towards the optical cavity 112, thereby providing recycling of the primary light.

[0051]

[0054] The LCD module 104 can be configured to process light received from the BLU 102 into desired characteristics for transmission to and distribution across the display screen 130. In some embodiments, the LCD module 104 can include one or more polarizing filters, such as a first polarizing filter 114 and a second polarizing filter 122, one or more optically transparent substrates, such as a first optically transparent substrate 116 and a second optically transparent substrate 128, switching devices 118.1-118.6 arranged in a 2D array on the first substrate 116, a liquid crystal (LC) solution layer 120, a plurality of pixels, such as pixels 124.1-124.2 arranged in the 2D array, a light extraction layer 140 disposed between the pixels 124.1, 124.2 and the optically transparent substrate 128, and the display screen 130.

[0052]

[0055] In some embodiments, pixel 124.1 can include subpixels 126.1-126.3, and pixel 124.2 can include subpixels 126.4-126.6. In some embodiments, each of pixels 124.1-124.2 can be tri-color, for example having red subpixels 126.1 and 126.4, green subpixels 126.2 and 126.5, and blue subpixels 126.3 and 126.6, respectively.

[0053]

[0056] The arrangement order of the red, green, and blue sub-pixels 126.1-126.6 in each pixel 124.1-124.2 is exemplary and not limiting. The red, green, and blue sub-pixels in each of the pixels 124.1-124.2 can be arranged in any order relative to one another. In some embodiments, the pixels 124.1 and / or 124.2 can be monochromatic having red, green, or blue sub-pixels 126.1-126.6. The number of pixels and switching devices shown in FIG. 1 is exemplary and not limiting. The LCD module 104 can have any number of switching devices and pixels without departing from the spirit and scope of the present disclosure.

[0054]

[0057] Light from the BLU 102 can be polarized through a first polarizing filter 114, and the polarized light can be transmitted to the LC solution layer 120. The LC solution layer 120 can include LC 132 having rod-like molecules that can act as shutters to control the amount of light transmission from the LC solution layer 120. In some embodiments, the LC 132 can be arranged in a 3D array. The columns 134.1-134.6 of the 3D array of LCs can be independently controlled by respective switching devices 118.1-118.6. In some embodiments, the switching devices 118.1-118.6 can include transistors, such as, for example, thin film transistors (TFTs). By controlling the LC 132, the amount of light that travels from the columns 134.1-134.6 to the respective subpixels 126.1-126.6 can be controlled, which in turn controls the amount of light transmitted from the subpixels 126.1-126.6.

[0055]

[0058] The LC 132 can be twisted to various degrees depending on the voltages applied to the rows 134.1-134.6 by the respective switching devices 118.1-118.6. By controlling the twist of the LC 132, the polarization angle of the light passing through the LC solution layer 120 can be controlled. Thus, the light leaving the LC solution layer 120 can pass through the second polarizing filter 122, which can be positioned at 90 degrees relative to the first polarizing filter 114. The polarization angle of the light leaving the LC solution layer 120 and entering the second polarizing filter 122 can determine how much of the light can pass through the second polarizing filter 122 and exit the polarizing filter 122. The second polarizing filter 122 can attenuate the light, block the light, or pass the light without attenuation based on its polarization angle.

[0056]

[0059] The portions of light that travel through the LC columns 134.1-134.6 and exit the second polarizing filter 122 may then be incident on each of the subpixels 126.1-126.6. These portions of light may undergo a stage of color filtering through each of the subpixels 126.1-126.6 to achieve desired optical characteristics for the distribution of light across the display screen 130. In some embodiments, each of the subpixels 126.1-126.6 may include a NS-based CC layer 136 that may filter the portions of light that are incident on the subpixels 126.1-126.6.

[0057]

[0060] The NS-based CC layer 136, according to some embodiments, can include luminescent nanostructures such as QDs (e.g., QDs 400 as described with reference to FIG. 4). The NS-based CC layer 136 can be a downconverter, where a portion of light (also referred to as primary light) incident on each of the subpixels 126.1-126.6 can be absorbed by, for example, luminescent nanostructures in the NS-based CC layer 136 and re-emitted as primary light having a lower energy or longer wavelength than the primary light.

[0058]

[0061] In some embodiments, the NS-based CC layers 136 of the red subpixels 126.1 and 126.4 can include emissive nanostructures that absorb the primary light and emit a first secondary light having a primary emission peak wavelength in the red wavelength region of the visible spectrum of light. In some embodiments, the NS-based CC layers 136 of the green subpixels 126.2 and 126.5 can include emissive nanostructures that absorb the primary light and emit a second secondary light having a primary emission peak wavelength in the green wavelength region of the visible spectrum of light. In some embodiments, the NS-based CC layers 136 of the blue subpixels 126.3 and 126.6 can include emissive nanostructures that absorb the primary light and emit a third secondary light having a primary emission peak wavelength in the blue wavelength region of the visible spectrum of light.

[0059]

[0062] In an alternative embodiment, the blue subpixels 126.3 and 126.6 can have a non-NS based layer instead of the NS based CC layer 136. The non-NS based layer can be optically transmissive to blue light when the BLU 102 has a blue LED 110 since it can eliminate emissive nanostructures such as QDs and there is no need for down-conversion of primary light from the blue LED 110 for the blue subpixels 126.3 and 126.6. In such an alternative embodiment, instead of the light blocking element 138, the blue subpixels 126.3 and 126.6 can also have a non-NS based layer that is optically transmissive to blue light.

[0060]

[0063] In some embodiments, the NS-based CC layers 136 can be segmented films disposed adjacent to each other on the second polarizing filter 122 or on an optically transparent substrate (not shown). The segmented NS-based CC layers 136 can be disposed in such a manner that there is a negligible gap at the interface between adjacent NS-based CC layers 136 to prevent leakage of primary light through the interface. In alternative embodiments, each of the NS-based CC layers 136 can be a different region of a continuous NS-based CC layer.

[0061]

[0064] Optionally, each of the sub-pixels 126.1-126.6 may include a shading element 138 disposed on the NS-based CC layer 136, according to some embodiments. Secondary light emitted from the NS-based CC layer 136 may be filtered through a corresponding one of the shading elements 138 before traveling to the display screen 130.

[0062]

[0065] The light blocking element 138 can be configured to pass the secondary light (e.g., the first, second and / or third secondary light described above) and block the portion of the primary light (e.g., blue light) that is not absorbed and down-converted to the secondary light by the NS-based CC layer 136. Undesirable portions of the primary light that may have leaked out of the NS-based CC layer 136 can be blocked by absorbing and / or scattering them. Leakage of unconverted primary light from the NS-based CC layer 136 to the display screen 130 can adversely affect the color gamut coverage of the LCD display device 100. The use of the light blocking element 138 to prevent such leakage can also help reduce the manufacturing cost of the LCD display device 100 by reducing the density of the luminescent nanostructures included in the NS-based CC layer 136. Instead of using luminescent nanostructures to absorb substantially all of the portion of the primary light, the density of the luminescent nanostructures can be reduced because the portion of the primary light that is not absorbed by the NS-based CC layer 136 can be filtered out by the light blocking element 138.

[0063]

[0066] The light blocking element 138 can also be configured to adjust the spectral emission width (also referred to as the width of the emission spectrum) of the secondary light (e.g., the first, second and / or third secondary light described above) to achieve the desired color gamut range of the LCD display device 100. Adjusting the spectral emission width may require absorbing one or more wavelengths from the secondary light to narrow their spectral emission width to achieve the desired color gamut range without a significant decrease in brightness. For example, this adjustment process may result in a decrease in brightness of less than 10% (e.g., about 8%, about 5%, about 3%, or about 1%) compared to a display device without the light blocking element 138. Since the secondary light from the NS-based CC layer 136 with luminescent nanostructures such as QDs typically exhibits a narrow spectral emission width, the adjustment process may not require the absorption of a wide range of wavelengths to achieve the desired color gamut range that is required in a non-QD-based display device to achieve a similar color gamut range.

[0064]

[0067] The light blocking element 138 may include one or more non-phosphor materials. That is, the one or more non-phosphor materials exhibit light absorbing and / or scattering properties but do not exhibit optical emitting properties. The one or more non-phosphor materials may be selected based on the light absorbing properties of the non-phosphor material to absorb and / or the scattering properties of the non-phosphor material to scatter only the wavelength or wavelengths or ranges of wavelengths that require absorption and / or scattering during the blocking and conditioning process described above. In some embodiments, the one or more non-phosphor materials may include the same absorption properties. In some embodiments, each of the one or more non-phosphor materials includes different absorption properties from each other.

[0065]

[0068] The one or more non-phosphor materials can be selected so that they can be inexpensively disposed on the NS-based CC layer 136 or any other layer / structure of the LCD display device 100 (e.g., the light extraction layer 140) to form the light blocking element 138. For example, the one or more non-phosphor materials can be a dye (e.g., a narrow band organic Exciton P491 dye), an ink, a paint, a polymeric material, and / or any material that can be sprayed, painted, spin-coated, printed, or any other suitable low temperature (e.g., less than 100° C.) deposition method. Printing can be performed, for example, using a plotter, an inkjet printer, or a screen printer. In some embodiments, the one or more non-phosphor materials can be disposed directly on the NS-based CC layer 136 or the light extraction layer 140. In some embodiments, the one or more non-phosphor materials can be a scattering material including a film or particles (e.g., particles having a diameter in the range of about 100 nm to about 500 μm) of titanium oxide, zinc oxide, zinc sulfide, silicone, or a combination thereof. In some embodiments, the light blocking element 138 can include a substrate with one or more non-phosphor materials disposed on the substrate.

[0066]

[0069] In some embodiments, the light blocking elements 138 can be segmented films disposed adjacent to each other on the NS-based CC layer 136 or the light extraction layer 140. The segmented light blocking elements 138 can be disposed in such a manner that there is a negligible gap at the interface between adjacent light blocking elements 138. In alternative embodiments, each of the light blocking elements 138 can be different regions of a continuous film disposed on the NS-based CC layer 136 or the light extraction layer 140.

[0067]

[0070] In some embodiments, the light blocking elements 138 can be included in the NS-based CC layer 136 rather than being separate structures as shown in FIG. 1 . That is, the NS-based CC layer 136 can be a composite film including light-emitting nanostructures as described above along with the light blocking elements 138. One or more non-phosphor materials of the light blocking elements 138, such as dyes, inks, paints, polymeric materials, scattering materials (e.g., particles having diameters ranging from about 100 nm to about 500 μm), or combinations thereof, can be incorporated or embedded in the matrix of the NS-based CC layer 136. The one or more non-phosphor materials can include nanostructured materials that can be dispersed in the matrix of the NS-based CC layer 136. These nanostructured materials can exhibit light absorbing and / or light scattering properties and may not exhibit any optical luminescent properties. In some embodiments, the light blocking element 138 can be included in the optically transparent substrate 128, which can also be configured to provide environmental sealing to underlying layers and / or structures of the LCD module 104 and / or BLU 102. In alternative embodiments, the light blocking element 138 can be included in the second polarizing filter 122, which can be positioned between the substrate 128 and the NS-based CC layer 136. In some embodiments, the light blocking element 138 can be, for example, a dichroic filter that can reflect the primary light (e.g., blue light) while transmitting the secondary light.

[0068]

[0071] In some embodiments, the light extraction layer 140 can be disposed on the surface 128a of the substrate 128. The light extraction layer 140 can include an optically transparent substrate 142 and nanostructured features 144 disposed on the substrate 142. In some embodiments, the light extraction layer 140 can be free of the substrate 142 and can have the nanostructured features 144 formed directly on the surface 128a. The nanostructured features 144 can be formed on the substrate 142 or surface 128a using a transfer printing method. In some embodiments, the nanostructured features 144 can be disposed on the substrate 142 or surface 128a in a repeating pattern, a random pattern, or a combination thereof. In some embodiments, the nanostructured features 144 can be disposed to form a textured surface on the substrate 142 or surface 128a. The textured surface can be formed to have a one-dimensional (e.g., strip-shaped), two-dimensional (e.g., column-shaped), and / or three-dimensional (e.g., spherical) array of nanostructured features 144. The nanostructured features 144 can have any three-dimensional geometric shape (e.g., spherical, conical, cylindrical, rectangular, elliptical, or trapezoidal). The lateral dimension (e.g., width) of the nanostructured features 144 along the X-axis can be less than about 1 μm, or can range from about 10 nm to about 100 nm (e.g., about 10 nm, about 20 nm, about 30 nm, about 40 nm, about 50 nm, or about 60 nm). The vertical dimension (e.g., height) of the nanostructured features 144 along the Z-axis can be less than about 1 μm, or can range from about 10 nm to about 100 nm (e.g., about 10 nm, about 20 nm, about 30 nm, about 40 nm, about 50 nm, or about 60 nm). The arrangement and shapes of the nanostructured features 144 in FIG. 1 are illustrative and not limiting.

[0069]

[0072] The light extraction layer 140 with nanostructured features 144 can provide a non-uniform interface between the substrate 128 and the light blocking elements 138 or the NS-based CC layer 136, optionally in the absence of the light blocking elements 138. The non-uniform interface can substantially reduce or prevent light generated by the NS-based CC layer 136 and / or emitted by the light blocking elements 138 from being reflected back into the NS-based CC layer 136 due to total internal reflection of the emitted or generated light within the respective light blocking elements 138 or NS-based CC layer 136. As a result, the light extraction layer 140 with nanostructured features 144 can significantly increase the amount of light extracted from the NS-based CC layer 136 and output from the NS-based display device 100, as compared to a display device without the light extraction layer 140.

[0070]

[0073] In some embodiments, the substrate 142 and / or the nanostructured features 144 may include a material similar to the matrix material of the NS-based CC layer 136 (e.g., the matrix material 510 described in FIG. 5 ) to provide a better index match with the NS-based CC layer 136 than the index match between the NS-based CC layer 136 and the substrate 128. This is because the matrix material of the NS-based CC layer 136 typically has a higher index of refraction than the substrate 128, and when light in the high index material (e.g., the NS-based CC layer 136) hits the interface with the low index material (e.g., the substrate 128) at an angle greater than the critical angle, the light can return back into the high index material instead of exiting the high index material. This may be referred to as total internal reflection. Thus, a better index match may also substantially reduce or prevent total internal reflection of the emitted or generated light within the respective light blocking element 138 or NS-based CC layer 136.

[0071]

[0074] The display screen 130 can be configured to generate an image. The display screen 130 can be a touch screen display according to some embodiments. The LCD display device 100 can further include one or more media materials (not shown) disposed between any of the adjacent elements in the LCD display device 100, such as between the optical cavity 112 and the LCD module 104, on either side of the LC solution layer 120, or between any other elements of the LCD display device 100. The one or more media materials can include, but are not limited to, a substrate, a vacuum, air, a gas, an optical material, an adhesive, an optical adhesive, glass, a polymer, a solid, a liquid, a gel, a curable material, an optical coupling material, an index matching material or an index mismatching material, an index gradient material, a coating material or an anti-coating material, a spacer, an epoxy, a silica gel, a silicone, a brightness enhancing material, a scattering material or a diffusing material, a reflective material or an anti-reflective material, a wavelength selective material, a wavelength selective anti-reflective material, or other suitable media materials. Suitable materials may include silicone, silicone gel, silica gel, epoxy (e.g., Loctite™ Epoxy E-30CL), acrylate (e.g., 3M™ Adhesive 2175). The medium material or materials may be applied as a curable gel or liquid, cured during or after deposition, or preformed and precured prior to deposition. Curing methods may include UV curing, thermal curing, chemical curing, or other suitable curing methods known in the art. The index-matching medium material may be selected to minimize optical losses between the elements of the BLU 102 and the LCD module 104.

[0072]

[0075] The LCD display device 100, according to various embodiments, can have a geometric shape, such as, but not limited to, a cylindrical shape, a trapezoid shape, a spherical shape, or an elliptical shape, without departing from the spirit and scope of the present invention. The LCD display device 100 is not limited to being a rectangular parallelepiped shape or having other shapes with straight sides. It should be noted that the rectangular cross-sectional shape of the LCD display device 100 is for illustrative purposes and is not limiting. The LCD display device 100, according to various embodiments, can have other cross-sectional shapes (e.g., trapezoidal, oval, diamond-shaped) without departing from the spirit and scope of the present invention. It should also be noted that although the optical cavity 112, the substrates 116 and 128, the polarizing filters 114 and 122, and the display screen 130 are shown in FIG. 1 as having similar dimensions along the X-axis, one skilled in the art would understand that each of these components, according to various embodiments, can have different dimensions from one another in one or more directions.

[0073]

[0076] 2 illustrates a schematic exploded cross-sectional view of a direct-lit LCD display 200 with a light extraction layer 140, according to some embodiments. The LCD display 200 can include a BLU 202 and an LCD module 104. Elements in FIG. 2 that have the same annotations as elements in FIG. 1 are described above.

[0074]

[0077] The BLU 202 can include an LED 210 (e.g., a blue LED), a light guide plate (LGP) 212, and a reflector 208. The BLU 202 can be configured to provide primary light (e.g., blue light) that can be processed through the LCD module 104 and then transmitted to and dispersed across the display screen 130. The blue LED can emit light in a range of about 440 nm to about 470 nm. According to some embodiments, the blue LED can be, for example, a GaN LED that emits blue light at a wavelength of 450 nm.

[0075]

[0078] The LGP 212 may include a polymer or glass solid, such as a fiber optic cable, plate, film, container, or other structure, according to some embodiments. The size of the LGP 212 may depend on the end use and properties of the LED 210. The thickness of the LGP 212 may be compatible with the thickness of the LED 210. Other dimensions of the LGP 212 may be designed to extend beyond the dimensions of the LED 210 and may be on the order of tens of millimeters to tens or hundreds of centimeters.

[0076]

[0079] In some embodiments, the material of the LGP 212 may include polycarbonate (PC), polymethyl methacrylate (PMMA), methyl methacrylate, styrene, acrylic polymer resin, glass, or other suitable LGP material. A suitable manufacturing method of the LGP 212 may include injection molding, extrusion, or other suitable embodiment. The LGP 212 may be configured to provide a uniform primary light emission such that the primary light incident on the LCD module 104 may have a uniform color and brightness. The LGP 212 may include a substantially uniform thickness across the entire LGP 212 surface. Alternatively, the LGP 212 may have a wedge-like shape. In some embodiments, the LGP 212 may be optically coupled to the LED 210 and may be physically connected to or physically separated from the LED 210. An optically clear adhesive may be used to physically connect the LGP 212 to the LED 210 (not shown).

[0077]

[0080] In some embodiments, the BLU 202 can include an array of LEDs (not shown), each of which can be similar in structure and function to the LED 210. The array of LEDs can be adjacent to the LGP 212 and can be configured to provide primary light to the LCD module 104 for processing and subsequent transmission to the screen 130, as described above with reference to FIG.

[0078]

[0081] In some embodiments, the reflector 208 can be configured to increase the amount of light emitted from the LGP 212. The reflector 208 can include any suitable material, such as a reflective mirror, a film of reflector particles, a reflective metallic film, or other suitable conventional reflector. In some embodiments, the reflector 208 can include a white film. In some embodiments, the reflector 208 can include additional functions or features, such as scattering, diffusing, or brightness enhancing features.

[0079] Exemplary methods for manufacturing a display device

[0082] 3 is a flow diagram of an exemplary method 300 for manufacturing display device 100 and / or 200, according to some embodiments. Steps may or may not be performed in different orders depending on the particular application. It should be noted that the method 300 may not produce a complete display device. Thus, it should be understood that additional processes may be provided before, during, and after the method 300, and that some other processes may only be briefly described herein.

[0080]

[0083] In step 305, a BLU is formed that includes one or more light sources. For example, as described with reference to Figures 1-2, a BLU 102 can be formed having an optical cavity 112 and an array of LEDs 110 (e.g., white LEDs, blue LEDs, or a combination thereof) coupled to the optical cavity 112, or a BLU 202 can be formed having an LGP 212 and LEDs 210 (e.g., blue LEDs).

[0081]

[0084] In step 310, the switching devices, the LC solution layer, and the polarizing filter are disposed on the BLU. For example, as described with reference to Figures 1-2, the switching devices 118.1-118.6 arranged in a 2D array can be disposed on an optically transparent substrate 116 that is disposed on the BLU 102 or 202, the LC solution layer 120 can be disposed on the switching devices 118.1-118.6, and the polarizing filter 122 can be disposed on the LC solution layer 120.

[0082]

[0085] In step 315, a light extraction layer is formed on an optically transparent substrate. For example, as described with reference to Figures 1-2, light extraction layer 140 including substrate 142 and nanostructured features 144 can be formed on substrate 128. In some embodiments, nanostructured features 144 of light extraction layer 140 can be formed directly on substrate 128. Nanostructured features 144 can be formed using a transfer printing method.

[0083]

[0086] In step 320, the light blocking elements and / or the NS-based CC layer are formed on the light extraction layer. For example, as described with reference to FIGS. 1-2, the light blocking elements 138 can be disposed on the light extraction layer 140 by spraying, painting, spin coating, printing, or any other suitable low temperature (e.g., less than 100° C.) deposition method. Printing can be performed, for example, using a plotter, an inkjet printer, or a screen printer. The NS-based CC layer 136 can be disposed on the light blocking elements 138 by a suitable deposition method (e.g., the method described for forming the NS film in FIG. 5). In some embodiments, the NS-based CC layer 136 can be disposed directly on the light extraction layer 140, optionally in the absence of the light blocking elements 138.

[0084]

[0087] In step 325, the substrate with the light extraction layer 140, the light blocking elements, and the NS-based CC layer are placed over the polarizing filter. For example, as described with reference to Figures 1-2, the substrate with the light extraction layer 140 128, the light blocking elements 138, and the NS-based CC layer 136 can be placed over the polarizing filter 122 with the NS-based layer 136 facing and in contact with the polarizing filter 122.

[0085]

[0088] In step 330, a display screen is disposed on the substrate. For example, as described with reference to Figures 1-2, the display screen 130 can be disposed on the surface of the substrate 128 opposite the surface 128a having the light extraction layer 140.

[0086] Exemplary embodiments of nanostructures coated with a barrier layer

[0089] FIG. 4 illustrates a cross-sectional structure of a barrier-layer-coated luminescent nanostructure (NS) 400 according to some embodiments. In some embodiments, a population of NSs 400 can be included in a NS-based CC layer 136. The barrier-layer-coated NSs 400 include an NS 401 and a barrier layer 406. The NSs 401 includes a core 402 and a shell 404. The core 402 includes a semiconductor material that emits light upon absorption of higher energy. Examples of semiconductor materials for the core 402 include indium phosphide (InP), cadmium selenide (CdSe), zinc sulfide (ZnS), lead sulfide (PbS), indium arsenide (InAs), indium gallium phosphide (InGaP), cadmium zinc selenide (CdZnSe), zinc selenide (ZnSe), and cadmium telluride (CdTe). Any other II-VI, III-V, tertiary, or quaternary semiconductor structures exhibiting a direct bandgap may be used as well. In some embodiments, the core 402 may also include one or more dopants, such as metals, alloys, etc., to provide some examples. Examples of metal dopants may include, but are not limited to, zinc (Zn), copper (Cu), aluminum (Al), platinum (Pt), chromium (Cr), tungsten (W), palladium (Pd), or combinations thereof. The presence of one or more dopants in the core 402 may improve the structural and optical stability and QY of the NS 401 compared to an undoped NS.

[0087]

[0090] The core 402 may have a diameter of less than 20 nm in size according to some embodiments. In another embodiment, the core 402 may have a diameter of about 1 nm to about 5 nm in size. The ability to tune the size of the core 402, and therefore the size of the NS 401 in the nanometer range, allows for a photoemission range across the optical spectrum. Generally, larger NSs emit light toward the red end of the spectrum, while smaller NSs emit light toward the blue end of the spectrum. This effect occurs because larger NSs have energy levels that are more closely spaced than smaller NSs. This allows the NSs to absorb photons that contain less energy, i.e., photons closer to the red end of the spectrum.

[0088]

[0091] The shell 404 surrounds the core 402 and is disposed on an outer surface of the core 402. The shell 404 can include cadmium sulfide (CdS), cadmium zinc sulfide (ZnCdS), zinc selenide sulfide (ZnSeS), and zinc sulfide (ZnS). In some embodiments, the shell 404 can have a thickness 404t, for example, one or more monolayers. In other embodiments, the shell 404 can have a thickness 404t of about 1 nm to about 5 nm. The shell 404 can be utilized to help reduce the lattice mismatch with the core 402 and improve the QY of the NS 401. The shell 404 can also help passivate and remove surface trap states, such as dangling bonds, on the core 402 to increase the QY of the NS 401. The presence of surface trap states can provide non-radiative recombination centers and contribute to a decrease in the luminous efficiency of the NS 401.

[0089]

[0092] In alternative embodiments, NS 401 may include a second shell disposed on shell 404, or three or more shells surrounding core 402, without departing from the spirit and scope of the present invention. In some embodiments, the second shell may be on the order of two monolayers thick and is typically, but not necessarily, a semiconducting material. The second shell may provide protection for core 402. The second shell material may be zinc sulfide (ZnS), although other materials may be used without departing from the scope or spirit of the present invention.

[0090]

[0093] The barrier layer 406 is configured to form a coating on the NS 401. In some embodiments, the barrier layer 406 is disposed substantially on and in contact with the outer surface 404a of the shell 404. In embodiments of the NS 401 having one or more shells, the barrier layer 406 can be disposed substantially on and in contact with the outermost shell of the NS 401. In an exemplary embodiment, the barrier layer 406 is configured to act as a spacer between the NS 401 and one or more NSs, for example in a solution, composition, and / or film having multiple NSs, the multiple NSs can be similar to the NS 401 and / or NS 400 coated with the barrier layer. In such NS solutions, NS compositions, and / or NS films, the barrier layer 406 can help prevent aggregation of the NS 401 with adjacent NSs. Aggregation of the NS 401 with adjacent NSs can increase the size of the NS 401, which can result in reduced or lost optical emission properties of the aggregated NSs (not shown) that include the NS 401. In further embodiments, the barrier layer 406 provides protection to the NS 401 from, for example, moisture, air, and / or harsh environments (e.g., high temperatures and chemicals used during lithographic processing of the NS and / or during the manufacturing process of a NS-based device) that may adversely affect the structural and optical properties of the NS 401.

[0091]

[0094] The barrier layer 406 includes one or more materials that are amorphous, optically transparent, and / or electrically inactive. Suitable barrier layers include inorganic materials, such as, but not limited to, inorganic oxides and / or nitrides. Examples of materials for the barrier layer 406 include oxides and / or nitrides of Al, Ba, Ca, Mg, Ni, Si, Ti, or Zr, according to various embodiments. The barrier layer 406 can have a thickness 406t in the range of about 8 nm to about 15 nm, in various embodiments.

[0092]

[0095] As illustrated in FIG. 4, the barrier layer coated NS 400 may additionally or optionally include a plurality of ligands or surfactants 408 according to some embodiments. The ligands or surfactants 408 may be adsorbed or attached to an outer surface of the barrier layer coated NS 400, such as on the outer surface of the barrier layer 406, according to some embodiments. The plurality of ligands or surfactants 408 may include a hydrophilic or polar head 408a and a hydrophobic or non-polar tail 408b. The hydrophilic or polar head 408a may be attached to the barrier layer 406. The presence of the ligands or surfactants 408 may help separate the NS 400 and / or NS 401 from other NSs during the formation of the NSs, for example in a solution, composition, and / or film. If the NSs may aggregate during their formation, the quantum efficiency of the NSs, such as NS 400 and / or NS 401, may decrease. Ligands or surfactants 408 can also be used to impart certain properties to the barrier layer coated NS 400, such as hydrophobicity to provide miscibility in non-polar solvents or to provide reactive sites for binding of other compounds (e.g., reverse micelle systems).

[0093]

[0096] There are a wide variety of ligands that can be used as the ligand 408. In some embodiments, the ligand is a fatty acid selected from lauric acid, caproic acid, myristic acid, palmitic acid, stearic acid, and oleic acid. In some embodiments, the ligand is an organophosphine or organophosphine oxide selected from trioctylphosphine oxide (TOPO), trioctylphosphine (TOP), diphenylphosphine (DPP), triphenylphosphine oxide, and tributylphosphine oxide. In some embodiments, the ligand is an amine selected from dodecylamine, oleylamine, hexadecylamine, and octadecylamine. In some embodiments, the ligand is trioctylphosphine (TOP). In some embodiments, the ligand is oleylamine. In some embodiments, the ligand is diphenylphosphine.

[0094]

[0097] There are a wide variety of surfactants that can be used as surfactant 408. In some embodiments, a non-ionic surfactant can be used as surfactant 408. Some examples of non-ionic surfactants include polyoxyethylene (5) nonylphenyl ether (trade name IGEPAL CO-520), polyoxyethylene (9) nonylphenyl ether (IGEPAL CO-630), octylphenoxy poly(ethyleneoxy)ethanol (IGEPAL CA-630), polyethylene glycol oleyl ether (Brij 93), polyethylene glycol hexadecyl ether (Brij 52), polyethylene glycol octadecyl ether (Brij S10), polyoxyethylene (10) isooctylcyclohexyl ether (Triton X-100), and polyoxyethylene branched nonylcyclohexyl ether (Triton N-101).

[0095]

[0098] In some embodiments, anionic surfactants can be used as surfactant 408. Some examples of anionic surfactants include sodium dioctyl sulfosuccinate, sodium stearate, sodium lauryl sulfate, sodium monododecyl phosphate, sodium dodecylbenzenesulfonate, and sodium myristyl sulfate.

[0096]

[0099] In some embodiments, NS 401 and / or 400 can be synthesized to emit light in one or more different color ranges, such as the red, orange, and / or yellow ranges. In some embodiments, NS 401 and / or 400 can be synthesized to emit light in the green and / or yellow ranges. In some embodiments, NS 401 and / or 400 can be synthesized to emit light in the blue, deep blue, purple, and / or ultraviolet ranges. In some embodiments, NS 401 and / or 400 can be synthesized to have a primary emission peak wavelength of about 605 nm to about 650 nm, about 510 nm to about 550 nm, or about 300 nm to about 480 nm.

[0097]

[0100] NS401 and / or 400 can be synthesized to exhibit a high QY. In some embodiments, NS401 and / or 400 can be synthesized to exhibit a QY of 80%-95% or 85%-90%.

[0098]

[0101] Thus, according to various embodiments, NS 400 can be synthesized such that the presence of barrier layer 406 on NS 401 does not substantially change or eliminate the optical luminescence properties of NS 401.

[0099] Exemplary embodiments of nanostructured films

[0102] 5 illustrates a cross-sectional view of an NS film 500, according to some embodiments. In some embodiments, the NS-based CC layer 136 can be similar to the NS film 500.

[0100]

[0103] The NS film 500 may include a core-shell NS 400 (FIG. 4) coated with multiple barrier layers and a matrix material 510, according to some embodiments. The NS 400 may be embedded or otherwise disposed in the matrix material 510, according to some embodiments. As used herein, the term "embedded" is used to indicate that the NS is encapsulated or encased within the matrix material 510, which constitutes the majority component of the matrix. It should be noted that in some embodiments, the NS 400 may be uniformly dispersed throughout the matrix material 510, while in other embodiments, the NS 400 may be dispersed according to a uniformity distribution function specific to the application. It should be noted that one skilled in the art would understand that the NS 400 may have a size distribution, even though the NS 400 are shown to have the same size diameter.

[0101]

[0104] In some embodiments, NS 400 can include a homogenous population of NSs having sizes that emit in the blue visible wavelength spectrum, the green visible wavelength spectrum, or the red visible wavelength spectrum. In other embodiments, NS 400 can include a first population of NSs having sizes that emit in the blue visible wavelength spectrum, a second population of NSs having sizes that emit in the green visible wavelength spectrum, and a third population of NSs that emit in the red visible wavelength spectrum.

[0102]

[0105] The matrix material 510 can be any suitable host matrix material capable of housing the NS 400. A suitable matrix material can be chemically and optically compatible with the NS 400 and any surrounding packaging material or layer used in applying the NS film 500 to a device. Suitable matrix materials can include non-yellowing optical materials that are transparent to both the primary and secondary light, thereby allowing both the primary and secondary light to transmit through the matrix material. In some embodiments, the matrix material 510 can completely surround each of the NS 400. The matrix material 510 can be flexible in applications where a flexible or moldable NS film 500 is desired. Alternatively, the matrix material 510 can include a high strength non-flexible material.

[0103]

[0106] The matrix material 510 can include polymers and organic and inorganic oxides. Suitable polymers for use in the matrix material 510 can be any polymer known to those of skill in the art that can be used for such purposes. The polymer can be substantially translucent or substantially transparent. Matrix materials 510 can include, but are not limited to, epoxies, acrylates, norbornenes, polyethylene, poly(vinyl butyral):poly(vinyl acetate), polyureas, polyurethanes; silicones and silicone derivatives, including, but not limited to, aminosilicones (AMS), polyphenylmethylsiloxanes, polyphenylalkylsiloxanes, polydiphenylsiloxanes, polydialkylsiloxanes, silsesquioxanes, fluorinated silicones, and vinyl and hydride substituted silicones; acrylic polymers and copolymers formed from monomers, including, but not limited to, methyl methacrylate, butyl methacrylate, and lauryl methacrylate; styrenic polymers, such as polystyrene, aminopolystyrene (APS), and poly(acrylonitrile ethylene styrene) (AES); polymers crosslinked with difunctional monomers, such as divinylbenzene; crosslinkers suitable for crosslinking ligand materials, such as epoxides that combine with ligand amines (e.g., APS or PEI ligand amines) to form epoxies.

[0104]

[0107] In some embodiments, the matrix material 510 includes scattering microbeads, such as TiO2 microbeads, ZnS microbeads, or glass microbeads, which can improve the light conversion efficiency of the NS film 500. In some embodiments, the matrix material 510 can include light blocking elements, such as the light blocking elements 138 described above with reference to FIGS.

[0105]

[0108] In another embodiment, the matrix material 510 can have low oxygen and moisture permeability, exhibit high light and chemical stability, exhibit a favorable refractive index, and adhere to the exterior surface of the NS 400, thereby providing a hermetic seal to protect the NS 400. In another embodiment, the matrix material 510 can be curable using UV or thermal curing methods to facilitate roll-to-roll processing.

[0106]

[0109] According to some embodiments, the NS film 500 can be formed by mixing NS400 into a polymer (e.g., photoresist), casting the NS polymer mixture onto a substrate, mixing NS400 with monomers and polymerizing them together, mixing NS400 into a sol-gel to form an oxide, or any other method known to one of skill in the art.

[0107]

[0110] According to some embodiments, forming the NS film 500 can include a film extrusion process. The film extrusion process can include forming a homogenous mixture of the matrix material 510 and the core-shell NS coated with a barrier layer, such as NS 400, and introducing the homogenous mixture into a top-mounted hopper that feeds the homogenous mixture into an extruder. In some embodiments, the homogenous mixture can be in the form of pellets. The film extrusion process can further include extruding the NS film 500 from a slot die and passing the extruded NS film 500 through a chill roll. In some embodiments, the extruded NS film 500 can have a thickness of less than about 75 μm, for example, in the range of about 70 μm to about 40 μm, about 65 μm to about 40 μm, about 60 μm to about 40 μm, or about 50 μm to about 40 μm. In some embodiments, the NS film 500 has a thickness of less than 10 μm. In some embodiments, the formation of the NS film 500 can optionally include a secondary process followed by a film extrusion process. The secondary process can include processes such as coextrusion, thermoforming, vacuum forming, plasma treating, molding, and / or embossing that result in a texture on the top surface of the NS film 500. The textured top surface of the NS film 500 can help, for example, to enhance defined light diffusion properties and / or defined angular optical emission properties of the NS film 500.

[0108] Exemplary embodiments of luminescent nanostructures

[0111] Described herein are various compositions having luminescent nanostructures (NS) whose various properties, including absorption, emission, and refractive index properties, can be tailored and tuned for various applications.

[0109]

[0112] The material properties of the NS can be substantially homogeneous or, in certain embodiments, heterogeneous. The optical properties of the NS can be determined by the particle size, chemical composition, or surface composition of the NS. The ability to tune the size of the luminescent NS from about 1 nm to about 15 nm allows for a photoemission range across the optical spectrum, providing great versatility in color rendering. Particle encapsulation can provide robustness against chemicals and UV degraders.

[0110]

[0113] The luminescent NSs used in the embodiments described herein can be made using any method known to those of skill in the art. Suitable methods and exemplary nanocrystals are disclosed in U.S. Patent No. 7,374,807, U.S. Patent Application No. 10 / 796,832, filed March 10, 2004, U.S. Patent No. 6,949,206, and U.S. Provisional Patent Application No. 60 / 578,236, filed June 8, 2004, the disclosures of each of which are incorporated herein by reference in their entirety.

[0111]

[0114] The light-emitting NSs used in the embodiments described herein can be made of any suitable material, including inorganic materials, more preferably inorganic conductive or semiconducting materials. Suitable semiconductor materials include those disclosed in U.S. Patent Application No. 10 / 796,832 and can include any type of semiconductor, including II-VI, III-V, IV-VI and IV semiconductors. Suitable semiconductor materials include, but are not limited to, Si, Ge, Sn, Se, Te, B, C (including diamond), P, BN, BP, BAs, AlN, AlP, AlAs, AlSb, GaN, GaP, GaAs, GaSb, InN, InP, InAs, InSb, AlN, AlP, AlAs, AlSb, GaN, GaP, GaAs, GaSb, ZnO, ZnS, ZnSe, ZnTe, CdS, CdSe, C Examples include dTe, HgS, HgSe, HgTe, BeS, BeSe, BeTe, MgS, MgSe, GeS, GeSe, GeTe, SuS, SnSe, SnTe, PbO, PbS, PbSe, PbTe, CuF, CuCl, CuBr, CuI, Si3N4, Ge3N4, Al2O3, (Al,Ga,In)2(S,Se,Te)3, Al2CO, and suitable combinations of two or more such semiconductors.

[0112]

[0115] In certain embodiments, the luminescent NS can have a dopant from the group consisting of p-type dopants or n-type dopants. The NS can also have a II-VI or III-V semiconductor. Examples of II-VI or III-V semiconductor NS can include any combination of elements from group II of the periodic table, such as Zn, Cd, and Hg, with any element from group VI, such as S, Se, Te, and Po, and any combination of elements from group III of the periodic table, such as B, Al, Ga, In, and Tl, with any element from group V, such as N, P, As, Sb, and Bi.

[0113]

[0116] The luminescent NSs described herein can also include ligands bound, associated, associated, or attached to their surface. Suitable ligands can include any group known to those skilled in the art, including those disclosed in U.S. Pat. No. 8,283,412, U.S. Pat. Appl. Pub. No. 2008 / 0237540, U.S. Pat. Appl. Pub. No. 2010 / 0110728, U.S. Pat. No. 8,563,133, U.S. Pat. No. 7,645,397, U.S. Pat. No. 7,374,807, U.S. Pat. No. 6,949,206, U.S. Pat. No. 7,572,393, and U.S. Pat. No. 7,267,875, the disclosures of each of which are incorporated herein by reference. The use of such ligands can enhance the ability of the luminescent NSs to be miscible in various solvents and matrices, including polymers. By increasing the miscibility (i.e., ability to be mixed without separating) of the luminescent NSs in various solvents and matrices, the luminescent NSs can be dispersed throughout the polymer composition such that the NSs do not clump together and therefore do not scatter light. Such ligands are described herein as "miscibility-enhancing" ligands.

[0114]

[0117] In certain embodiments, compositions are provided having luminescent NSs dispersed or embedded in a matrix material. Suitable matrix materials can be any material known to those skilled in the art, including polymeric materials, organic and inorganic oxides. The compositions described herein can be layers, encapsulants, coatings, sheets, or films. In embodiments described herein where reference is made to a layer, polymer layer, matrix, sheet, or film, it should be understood that these terms are used interchangeably and that the embodiments described are not limited to any one type of composition, but encompass any matrix material or layer described herein or known in the art.

[0115]

[0118] Downconverting NS (disclosed, for example, in U.S. Patent No. 7,374,807) exploits the luminescent properties of luminescent nanostructures tailored to absorb light at a particular wavelength and then emit light at a second wavelength, thereby resulting in improved performance and efficiency of active light sources (e.g., LEDs).

[0116]

[0119] Although any method known to those skilled in the art can be used to create luminescent NS, solution-phase colloidal methods for the controlled growth of inorganic nanomaterial phosphors can be used. See Alivisatos, AP, "Semiconductor clusters, nanocrystals, and quantum dots," Science 271:933 (1996); X. Peng, M. Schlamp, A. Kadavanich, AP Alivisatos, "Epitaxial growth of highly luminescent CdSe / CdS Core / Shell nanocrystals with photostability and electronic accessibility," J. Am. Chem. Soc. 30:7019-7029 (1997); and CB Murray, DJ Norris, MG Bawendi, "Synthesis and characterization of nearly monodisperse CdE (E=sulfur, selenium, tellurium) semiconductor nanocrystallites," J Am. Chem. Soc. 115:8706 (1993), the disclosures of which are incorporated herein by reference in their entireties.

[0117]

[0120] According to some embodiments, CdSe can be used as the NS material, for example for visible light down-conversion, due to the relative maturity of the synthesis of this material. It may also be possible to substitute non-cadmium-containing NSs through the use of versatile surface chemistry.

[0118]

[0121] In semiconductor NSs, photoinduced emission occurs from the band edge states of the NSs. The band edge emission from the emissive NSs competes with radiative and non-radiative decay channels arising from surface electronic states. X. Peng, et al., J Am. Chem. Soc. 30:7019-7029 (1997). As a result, the presence of surface defects such as dangling bonds provides non-radiative recombination centers and contributes to a decrease in the emission efficiency. An efficient and permanent method to passivate and remove surface trap states can be epitaxial growth of an inorganic shell material on the surface of the NSs. X. Peng, et al., J. Am. Chem. Soc. 30:701 9-7029 (1997). The shell material can be selected so that the electronic levels are type I with respect to the core material (e.g., have a larger band gap to provide a potential step that localizes the electrons and holes in the core). As a result, the probability of non-radiative recombination can be reduced.

[0119]

[0122] Core-shell structures can be obtained by adding organometallic precursors containing the shell material to a reaction mixture containing the core NS. In this case, instead of a nucleation event followed by growth, the cores act as nuclei and the shells grow from their surfaces. The reaction temperature is kept low to favor the addition of shell material monomers to the core surface while preventing independent nucleation of nanocrystals of the shell material. A surfactant in the reaction mixture is present to promote controlled growth and ensure solubility of the shell material. A uniform and epitaxially grown shell can be obtained when there is little lattice mismatch between the two materials.

[0120]

[0123] Exemplary materials for preparing core-shell luminescent NSs include, but are not limited to, Si, Ge, Sn, Se, Te, B, C (including diamond), P, Co, Au, BN, BP, BA, AlN, AlP, AlAs, AlSb, GaN, GaP, GaAs, GaSb, InN, InP, InAs, InSb, AlN, AlP, AlAs, AlSb, GaN, GaP, GaAs, GaSb, ZnO, ZnS, ZnSe, ZnTe, CdS, CdSe, CdTe, HgS, HgSe, HgTc, BeS, BcSe, BcTe, MgS, MgSe, Examples of suitable NS include GeS, GeSe, GeTe, SnS, SnSe, SnTe, PbO, PbS, PbSe, PbTe, CuP, CuCl, CuBr, CuI, Si3N4, Ge3N4, Al2O3, (Al,Ga,In)2(S,Se,Te)3, AlCO, and shell luminescent NSs used in the practice of the present invention include, but are not limited to (referred to as core / shell): CdSe / ZnS, InP / ZnS, InP / ZnSe, PbSe / PbS, CdSe / CdS, CdTe / CdS, CdTe / ZnS, and others.

[0121]

[0124] The luminescent NSs used in the embodiments described herein have a size of less than about 100 nm to less than about 2 nm and are capable of absorbing visible light in the present invention. As used herein, visible light is electromagnetic radiation with wavelengths of about 380 to about 780 nanometers that are visible to the human eye. Visible light can be separated into various colors of the spectrum, such as red, orange, yellow, green, blue, indigo, and violet. Blue light can include light with wavelengths of about 435 nm to about 495 nm, green light can include light with wavelengths of about 495 nm to about 570 nm, and red light can include light with wavelengths of about 620 nm to about 750 nm.

[0122]

[0125] According to various embodiments, the luminescent NS can have a size and composition such that it absorbs photons in the ultraviolet, near infrared, and / or infrared spectrum. The ultraviolet spectrum can include light with wavelengths from about 100 nm to about 400 nm, the near infrared spectrum can include light with wavelengths from about 750 nm to about 100 μm, and the infrared spectrum can include light with wavelengths from about 750 nm to about 300 μm.

[0123]

[0126] Although luminescent NSs of other suitable materials can be used in various embodiments described herein, in certain embodiments the NSs can be ZnS, InAs, CdSe, or any combination thereof to form the population of nanocrystals used in the embodiments described herein. As noted above, in further embodiments the luminescent NSs can be core / shell nanocrystals, such as CdSe / ZnS, InP / ZnSe, CdSe / CdS, or InP / ZnS.

[0124]

[0127] Suitable luminescent nanostructures, methods of preparing luminescent nanostructures, including the addition of various solubility-enhancing ligands, can be found in published U.S. Patent Application Publication No. 2012 / 0113672, the disclosure of which is incorporated herein by reference in its entirety.

[0125]

[0128] Although certain embodiments have been illustrated and described herein, it should be understood that the claims should not be limited to the specific forms or arrangements of parts described and shown. Although exemplary embodiments have been disclosed and specific terms are used herein, these terms are used in a generic and descriptive sense only and not for purposes of limitation. Modifications and variations of the embodiments are possible in light of the above teachings. It should be understood, therefore, that the embodiments may be practiced otherwise than as specifically described.

Claims

1. A display device, comprising: A backlight unit including a light source; a nanostructure-based color conversion (NS-based CC) layer configured to receive primary light from the light source having a first peak wavelength and convert a portion of the primary light to emit secondary light having a second peak wavelength different from the first peak wavelength; a light extraction layer optically coupled to the NS-based CC layer, the light extraction layer having patterned features having one or more dimensions on the nanometer scale; Including, the light extraction layer includes an optically transparent substrate and is configured to reduce total internal reflection of the secondary light; the patterned features are disposed in a repeating or random pattern on the optically transparent substrate; the optically transparent substrate is disposed between the NS-based CC layer and the patterned features; a top surface of the patterned feature faces away from a top surface of the NS-based CC layer; Display device.

2. The display of claim 1 , wherein the patterned features and the matrix of the NS-based CC layer comprise the same material.

3. The display device of claim 1 or 2, wherein the material of the patterned features and the matrix material of the NS-based CC layer have refractive indices equal to each other.

4. The display device of any one of claims 1 to 3, wherein the patterned features have lateral dimensions in the range of about 10 nm to about 100 nm.

5. The display device of any one of claims 1 to 4, wherein the patterned features have vertical dimensions in the range of about 10 nm to about 100 nm.

6. The display device of any one of claims 1 to 5, wherein the patterned features contact the NS-based CC layer.

7. The display device of claim 1 , further comprising a filter element disposed between the light extraction layer and the NS-based CC layer.

8. The display device of claim 7, wherein the filter element is optically coupled to the NS-based CC layer and the light extraction layer and configured to allow the secondary light to pass through the filter element and to block an unconverted portion of the primary light from passing through the filter element.

9. The display device of claim 8 , wherein the filter element is configured to absorb the unconverted portion of the primary light.

10. 10. A display device as claimed in claim 8 or 9, wherein the filter element is arranged to scatter the unconverted portion of the primary light.

11. A display device according to any one of claims 7 to 10, wherein the NS-based CC layer comprises a matrix and the filter elements are embedded in the matrix.

12. The display device according to any one of claims 7 to 11, wherein the filter element comprises a pigment, an ink, a paint, or a polymer material.

13. The display device of any one of claims 1 to 12, wherein the NS-based CC-layer comprises luminescent nanostructures.

14. A display device according to any preceding claim, wherein the NS-based CC-layer comprises an array of segmented NS-based CC-layers.

15. The NS-based CC layer comprises: a first region having a first population of emissive nanostructures configured to emit red light; a second region having a second population of emissive nanostructures configured to emit green light; The display device according to any one of claims 1 to 14, comprising:

16. The NS-based CC layer comprises: a first region having a first population of emissive nanostructures configured to emit red light; a second region having a second population of emissive nanostructures configured to emit green light; a third region having a third population of emissive nanostructures configured to emit blue light; and The display device according to any one of claims 1 to 15, comprising:

17. A display device according to any preceding claim, comprising an LCD module comprising the NS-based CC layer and the light extraction layer.

18. The LCD module includes: a first polarizing filter configured to polarize the primary light; a liquid crystal layer configured to adjust the polarization angle of the polarized primary light; a second polarizing filter disposed between the NS-based CC layer and the liquid crystal layer and configured to control the transmission of the polarized primary light from the liquid crystal layer to the NS-based CC layer; The display device of claim 17 further comprising:

19. A method of manufacturing a display device, comprising the steps of: The method includes forming a first portion and a second portion of a liquid crystal display (LCD) module, disposing the second portion of the LCD module on the first portion of the LCD module, and disposing a display screen on the second portion of the LCD module; forming the first portion includes disposing a liquid crystal layer on a backlight unit (BLU) of the display device and disposing a polarizing filter on the liquid crystal layer; forming the second portion includes forming a light extraction layer on an optically transparent substrate; and forming a nanostructure-based color conversion (NS-based CC) layer on the light extraction layer. method.

20. 20. The method of claim 19, wherein forming the light extraction layer comprises patterning nanostructured features on the optically transparent substrate.

21. 21. The method of claim 19 or 20, wherein forming the light extraction layer comprises transfer printing nanostructured features onto the optically transparent substrate.

22. 22. The method of any one of claims 19 to 21, wherein forming the light extraction layer comprises transfer printing nanostructured features onto the optically transparent substrate in a repeating or random pattern.

23. 23. The method of any one of claims 19 to 22, wherein forming the light extraction layer comprises patterning nanostructured features with a material having a refractive index equal to a refractive index of a matrix material of the NS-based CC layer.

24. The method of any one of claims 19 to 23, wherein forming the light extraction layer comprises patterning nanostructured features having lateral dimensions in a range from about 10 nm to about 100 nm.

25. The method of any one of claims 19 to 24, wherein forming the light extraction layer comprises patterning nanostructured features having vertical dimensions in a range from about 10 nm to about 100 nm.

26. forming an NS-based CC layer on the light extraction layer, disposing a light blocking element on the light extraction layer; disposing the NS-based CC layer on the light blocking element; The method according to any one of claims 19 to 25, comprising:

27. The method of any one of claims 19 to 25, wherein forming the NS-based CC-layer comprises disposing the NS-based CC-layer directly on the light extraction layer.

28. 28. The method of claim 19, wherein disposing the second portion of the LCD module on the first portion of the LCD module comprises combining the NS-based CC layer with the polarizing filter.

Images