AlN single crystal substrate
The three-layer AlN single crystal substrate with a high internal defect density in the second layer addresses the issue of crack introduction in conventional methods, enhancing the yield and luminous efficiency of deep ultraviolet light emitting devices.
JP7650958B2Active Publication Date: 2025-03-25NGK CORP
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Patent Information
- Application Number
- JP2023508782
- Authority / Receiving Office
- JP · JP
- Patent Type
- Patents
- Current Assignee / Owner
- Priority Date
- 2021-03-25
- Filing Date
- 2022-02-16
- Publication Date
- 2025-03-25
- Estimated Expiration
- 2042-02-16
AI Technical Summary
Technical Problem
Conventional methods for reducing dislocations in AlN single crystal substrates often introduce cracks, leading to poor yield and reduced luminous efficiency in deep ultraviolet light emitting devices.
Method used
A three-layer AlN single crystal substrate is developed, where the second layer has a defect density 10 times or more than the first and third layers, effectively suppressing crack generation by controlling the defect density distribution.
Benefits of technology
The approach significantly improves the yield and luminous efficiency of deep ultraviolet light emitting devices by reducing crack formation and maintaining low surface defect density.
✦ Generated by Eureka AI based on patent content.
Abstract
Provided is an AIN single crystal substrate in which the occurrence of cracks is suppressed. This AIN single crystal substrate has a three-layer structure that, in terms of defect density, can be divided into a first layer, a second layer, and a third layer in the stated order in the thickness direction, and is entirely formed from one AIN single crystal. The second layer has a defect density of at least 10 times the defect density of the first layer and that of the third layer.
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