Semiconductor substrate manufacturing method, manufacturing apparatus thereof, and epitaxial growth method
JP7651786B2Active Publication Date: 2025-03-27KWANSEI GAKUIN EDUCTIONAL FOUND +1
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Patent Information
- Application Number
- JP2021516244
- Authority / Receiving Office
- JP · JP
- Patent Type
- Patents
- Current Assignee / Owner
- Priority Date
- 2019-04-26
- Filing Date
- 2020-04-24
- Publication Date
- 2025-03-27
- Estimated Expiration
- 2040-04-24
AI Technical Summary
Benefits of technology
【0026】 開示した技術によれば、新規な半導体基板の製造方法、その製造装置、及び、エピタキシャル成長方法を提供することができる。
✦ Generated by Eureka AI based on patent content.
Abstract
The purpose of the present invention is to provide a novel method and apparatus of manufacturing a semiconductor substrate. Achieved are a method of manufacturing a semiconductor substrate and a manufacturing apparatus therefor, the method comprising: an installation step for installing a plurality of objects to be processed having semiconductor substrates in a stack; and a heating step for heating each of the plurality of objects to be processed such that a temperature gradient is formed in the thickness direction of the semiconductor substrate.
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