Nitride semiconductor substrate and method for producing same

Abstract

The present invention is a nitride semiconductor substrate comprising a growth substrate, and a nitride semiconductor thin film deposited on the growth substrate, the nitride semiconductor substrate characterized in that the nitride semiconductor thin film includes an AlN layer formed on the growth substrate and a nitride semiconductor layer formed on the AlN layer, and the average Y (yttrium) concentration in the AlN layer is 1E15 atoms / cm3 or greater and 5E19 atoms / cm 3 or less. As a result, provided are a nitride semiconductor substrate and method for producing the same that can improve the surface morphology of the AlN layer and suppress the occurrence of pits in the nitride semiconductor epitaxial wafer surface.