Method for controlling forming voltage in resistive random access memory devices - Patents.com

By introducing additional defects through plasma treatment post-deposition, the forming voltage in ReRAM devices can be reduced without altering the dielectric film thickness, addressing the challenge of voltage adjustment in existing ReRAM technologies.

JP7653003B2Active Publication Date: 2025-03-28TOKYO ELECTRON LTD +1
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Patent Information

Application Number
JP2021570744
Authority / Receiving Office
JP · JP
Patent Type
Patents
Current Assignee / Owner
Priority Date
2019-05-31
Filing Date
2020-05-29
Publication Date
2025-03-28
Estimated Expiration
2040-05-29

AI Technical Summary

Technical Problem

Existing ReRAM devices face challenges in adjusting the forming voltage without altering the thickness of the dielectric film, which can affect device performance and require changes in dielectric materials.

Method used

A method involving post-deposition plasma treatment of the dielectric film to introduce additional defects without changing the physical thickness, thereby reducing the forming voltage required for conductive filament formation.

Benefits of technology

This approach allows for highly controllable reduction of forming voltage in ReRAM devices, maintaining the dielectric film thickness and performance, and enabling more flexible device design.

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Abstract

A method for controlling a forming voltage of a dielectric film in a resistive random access memory (ReRAM) device includes depositing a dielectric film containing intrinsic defects on a substrate, forming a plasma-enhanced treatment gas including H gas, and exposing the dielectric film to the plasma-enhanced treatment gas to create additional defects in the dielectric film without substantially changing the physical thickness of the dielectric film, where the additional defects lower the forming voltage required to generate a conductive filament across the dielectric film. The dielectric film can include a metal oxide film, and the plasma-enhanced treatment gas can be formed using a microwave plasma source.
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