High performance epitaxial growth substrate and manufacturing method thereof
By optimizing the multi-layer film structure and seed crystal layer thickness, the polycrystal defects and high cost of AlN and GaN base crystal base plates are solved, and a high-quality and low-cost III nitride base plate is achieved, improving the performance of deep ultraviolet light and high-frequency equipment.
Patent Information
- Application Number
- JP2021214704
- Authority / Receiving Office
- JP · JP
- Patent Type
- Patents
- Current Assignee / Owner
- Filing Date
- 2021-12-28
- Publication Date
- 2025-04-07
- Estimated Expiration
- 2041-12-28
AI Technical Summary
The existing AlN and GaN base crystal base plates have problems of polycrystal defects, low quality and high cost, which limits their wide application in high frequency and deep ultraviolet light.
By optimizing the difference in thermal expansion coefficients of the multilayer film, adjusting the composition and thickness of the encapsulation layer, flattening layer and seed crystal layer, reducing thermal stress, and adding a stress adjustment layer if necessary to achieve extremely thinning of the seed crystal layer (thickness between 0.04 μm and 0.10 μm), thereby reducing crystal defects and manufacturing costs.
A high-quality and low-cost III nitride-based crystal base plate is achieved, reducing crystal defects and manufacturing costs, and improving the performance of deep ultraviolet light and high-frequency equipment.