Substrate processing apparatus, substrate processing method, and computer-readable recording medium

Abstract

To provide: a substrate processing device capable of suppressing consumption of a cleaning fluid for cleaning a substrate; a substrate processing method; and a computer readable recording medium.SOLUTION: A substrate processing device comprises: a first cleaning section configured to clean, with a cleaning fluid, a substrate which is processed by a process liquid; a storage section configured to store a drainage fluid that is the cleaning fluid drained from the first cleaning section; a first specific resistance meter provided in the storage section and configured to measure a specific resistance value of the drainage fluid stored in the storage section; a first supply section configured to supply the drainage fluid stored in the storage section to the first cleaning section; and a control section. In a case where the specific resistance value of the drainage fluid measured by the first specific resistance meter is equal to or more than a first setting, the control section executes processing for supplying the drainage fluid from the storage section to the first cleaning section by controlling the first supply section.SELECTED DRAWING: Figure 2

Description

Technical Field

[0001] The present disclosure relates to a substrate processing apparatus, a substrate processing method, and a computer-readable recording medium.

Background Art

[0002] Patent Document 1 discloses a cleaning apparatus that rinses a substrate processed with a chemical solution with pure water.

Prior Art Documents

Patent Documents

[0003]

Patent Document 1

Summary of the Invention

Problems to be Solved by the Invention

[0004] The present disclosure describes a substrate processing apparatus, a substrate processing method, and a computer-readable recording medium capable of suppressing the consumption amount of a cleaning liquid for cleaning a substrate.

Means for Solving the Problems

[0005] An example of the substrate processing apparatus includes a first cleaning unit configured to clean a substrate processed with a processing liquid with a cleaning liquid, a storage unit configured to store drain liquid, which is the cleaning liquid discharged from the first cleaning unit, a first resistivity meter provided in the storage unit and configured to measure the resistivity value of the drain liquid stored in the storage unit, a first supply unit configured to supply the drain liquid stored in the storage unit to the first cleaning unit, and a control unit. The control unit is configured to control the first supply unit to execute a process of supplying the drain liquid from the storage unit to the first cleaning unit when the resistivity value of the drain liquid measured by the first resistivity meter is equal to or greater than a first set value.

Effects of the Invention

[0006] According to the substrate processing apparatus, substrate processing method, and computer-readable recording medium described herein, it is possible to reduce the amount of cleaning solution consumed for cleaning substrates. [Brief explanation of the drawing]

[0007] [Figure 1] Figure 1 is a top view showing an example of a substrate processing system. [Figure 2] Figure 2 is a schematic diagram showing an example of a substrate cleaning apparatus. [Figure 3] Figure 3 is a block diagram showing an example of the main components of a substrate processing system. [Figure 4] Figure 4 is a schematic diagram showing an example of the controller's hardware configuration. [Figure 5] Figure 5 is a flowchart illustrating an example of a process for reusing cleaning solution during the substrate cleaning process. [Figure 6] Figure 6 is a graph showing how the resistivity of the used solution changes over time. [Figure 7] Figure 7 is a schematic diagram showing another example of a substrate cleaning apparatus. [Figure 8] Figure 8 is a schematic diagram showing another example of a substrate cleaning apparatus. [Modes for carrying out the invention]

[0008] In the following descriptions, the same reference numeral will be used for identical elements or elements with the same function, and redundant explanations will be omitted. Furthermore, in this specification, when referring to the top, bottom, right, and left of a figure, the direction of the reference numeral in the figure will be used as the reference.

[0009] [Configuration of the substrate processing system] First, the configuration of the substrate processing system 1 will be described with reference to Figure 1. The substrate processing system 1 includes a carrier loading / unloading unit 2, a lot formation unit 3, a lot placement unit 4, a lot processing unit 5 (substrate processing device), and a controller Ctr (control unit).

[0010] The carrier loading / unloading section 2 includes a stage 2a, a mounting table 2b, a transport mechanism 2c, and a stock 2d. The stage 2a is configured to accommodate multiple carriers 6. The mounting table 2b is configured to accommodate one carrier 6. The transport mechanism 2c is located between the stage 2a and the mounting table 2b. The transport mechanism 2c operates based on an operation signal from the controller Ctr and is configured to transport the carriers 6 between the stage 2a, the mounting table 2b, and the stock 2d. The stock 2d is configured to temporarily store the carriers 6.

[0011] The carrier 6 is configured to accommodate multiple (for example, 25) substrates W arranged vertically in a horizontal orientation. In this specification, "horizontal orientation" refers to an orientation in which the main surface of the substrate W is aligned horizontally. The substrate W may be disc-shaped or may be a plate shape other than circular, such as a polygon. The substrate W may have a notch in which a part is cut out. The notch may be, for example, a notch (groove such as U-shaped or V-shaped) or a straight section extending in a straight line (a so-called orientation flat). The substrate W may be, for example, a semiconductor substrate (silicon wafer), a glass substrate, a mask substrate, an FPD (Flat Panel Display) substrate, or various other substrates. The diameter of the substrate W may be, for example, about 200 mm to 450 mm.

[0012] The lot formation unit 3 includes a substrate transport mechanism 3a configured to take multiple substrates W from one or more carriers 6 to form a lot. Multiple substrates W constituting the lot (e.g., 50) are processed simultaneously in the lot processing unit 5. The substrate transport mechanism 3a operates based on an operation signal from the controller Ctr and is configured to change the orientation of the substrates W between a horizontal orientation and a vertical orientation during transport. In this specification, the vertical orientation refers to the orientation in which the main surface of the substrate W is aligned with the vertical direction.

[0013] The substrate transfer mechanism 3a, for example, takes out one substrate W from the carrier 6 placed on the mounting table 2b, changes its posture to a vertical posture, and transfers the substrate W in the vertical posture to the lot mounting section 4. The substrate transfer mechanism 3a repeats this to form one lot in the lot mounting section 4. On the other hand, the substrate transfer mechanism 3a, for example, takes out one substrate W from the lot placed on the lot mounting section 4, changes its posture to a horizontal posture, and transfers the substrate W in the horizontal posture to the carrier 6 on the mounting table 2b. The substrate transfer mechanism 3a repeats this to store all the substrates W constituting the lot in one or a plurality of carriers 6.

[0014] The lot mounting section 4 includes a mounting table 4a for temporarily mounting the lot conveyed between the lot forming section 3 and the lot processing section 5. The mounting table 4a may include a pre - processing lot mounting table 4b configured to mount the lot before being processed by the lot processing section 5 and a post - processing lot mounting table 4c configured to mount the lot after being processed by the lot processing section 5.

[0015] The lot processing section 5 is configured to perform processes such as etching, cleaning, and drying on a plurality of substrates W arranged vertically in a row as one lot.

[0016] [Details of the Lot Processing Section] Here, referring to FIGS. 1 and 2, the lot processing section 5 will be described in detail. The lot processing section 5 includes a transfer mechanism 7, a drying processing device 8, a cleaning processing device 9, a plurality of liquid processing devices 10, a plurality of liquid processing devices 20 (the first cleaning section, the second cleaning section), a processing liquid supply section 30, a cleaning liquid supply section 40, a storage section 50, a gas supply section 60, and a circulation section 70. In FIG. 2, one of the plurality of liquid processing devices 10 and two of the plurality of liquid processing devices 20 are shown, but the other liquid processing devices 10, 20 may also be configured in the same manner as the liquid processing devices 10, 20 in FIG. 2.

[0017] As illustrated in FIG. 1, the transfer mechanism 7 operates based on an operation signal from the controller Ctr, and is configured to transfer a lot among the lot placement unit 4, the drying processing device 8, the cleaning processing device 9, and the plurality of liquid processing devices 10. The transfer mechanism 7 includes a rail 7a, a moving body 7b, and a holding body 7c. The rail 7a is arranged so as to extend between the lot placement unit 4 and the lot processing unit 5. The moving body 7b is configured to be movable along the rail 7a. The holding body 7c is provided on the moving body 7b and is configured to hold a lot (a plurality of substrates W arranged vertically and front and back).

[0018] The drying processing device 8 operates based on an operation signal from the controller Ctr, and is configured to perform a drying process on the substrate W using a processing gas for drying (for example, isopropyl alcohol, etc.). The cleaning processing device 9 operates based on an operation signal from the controller Ctr, and is configured to perform a cleaning process on the holding body 7c using a processing liquid for cleaning and a drying gas.

[0019] As illustrated in FIG. 2, the liquid processing device 10 is configured to process the substrate W with a processing liquid L1 (for example, a process for removing dirt and foreign substances, an etching process, etc.). The processing liquid L1 may contain, for example, an alkaline or acidic chemical solution. The alkaline chemical solution may contain, for example, SC-1 solution (a mixed solution of ammonia, hydrogen peroxide, and pure water), etc. The acidic chemical solution may contain, for example, SC-2 solution (a mixed solution of hydrochloric acid, hydrogen peroxide solution, and pure water), SPM (a mixed solution of sulfuric acid and hydrogen peroxide solution), HF solution (hydrofluoric acid), DHF solution (dilute hydrofluoric acid), HF / HNO3 solution (a mixed solution of hydrofluoric acid and nitric acid), etc.

[0020] The liquid processing device 20 is configured to clean the substrate W processed by the liquid processing device 10 with a cleaning liquid L2. The cleaning method of the substrate W in the liquid processing device 20 may be, for example, overflow rinsing, quick dump rinsing, etc. The cleaning liquid L2 may contain, for example, pure water (DIW: deionized water), ozone water, carbonated water (CO2 water), ammonia water, etc.

[0021] Each liquid treatment apparatus 10 and 20 includes a treatment tank B and a holding member HM, respectively.

[0022] A pipe D1 for disposing of the processing liquid L1 used to process the substrate W is connected to the processing tank B of the liquid processing apparatus 10. A valve V1 is provided on the pipe D1. The valve V1 is configured to open and close based on an operation signal from the controller Ctr. When the valve V1 is opened, the used processing liquid L1 used to process the substrate W is discharged as waste liquid from the processing tank B of the liquid processing apparatus 10.

[0023] The processing tank B of the liquid processing apparatus 20 is equipped with a resistivity meter R1 (second resistivity meter) configured to measure the resistivity of the cleaning solution L2 (hereinafter referred to as used solution L2a) used to clean the substrate W. The resistivity value measured by the resistivity meter R1 is transmitted to the controller Ctr.

[0024] A pipe D2 (second supply section) through which used liquid L2a flows is connected to the treatment tank B of the liquid treatment device 20. The downstream end of pipe D2 is connected to the storage section 50. Partway along pipe D2, a branch pipe D2a for disposing of used liquid L2a is connected, branching off from pipe D2. A valve V2 (second supply section) is provided at the branching point between pipe D2 and branch pipe D2a. Valve V2 is configured to selectively flow used liquid L2a to either the downstream side of pipe D2 or branch pipe D2a by opening and closing based on an operating signal from controller Ctr.

[0025] When valve V2 is open on the pipe D2 side and closed on the branch pipe D2a side, used liquid L2a is supplied to the storage section 50. On the other hand, when valve V2 is closed on the pipe D2 side and open on the branch pipe D2a side, used liquid L2a is discarded as waste liquid from the treatment tank B of the liquid treatment device 20. Valves may also be provided on the downstream side of pipe D2 from the branching point and on the branch pipe D2a, and each valve may be controlled so that when one valve is open, the other valve is closed.

[0026] The holding member HM is configured to receive one lot from the transport mechanism 7 and hold the multiple substrates W constituting that lot in a vertical position. The holding member HM is configured to be able to move up and down by a lifting mechanism (not shown). The holding member HM is movable between a lowered position in which the multiple substrates W it holds are placed inside the processing tank B and an elevated position in which the multiple substrates W it holds are located above the processing tank B.

[0027] In the lowered position, the multiple substrates W held by the holding member HM are treated with processing liquid L1 or cleaned with cleaning liquid L2. Meanwhile, in the raised position, the multiple substrates W can be transferred between the holding member HM and the transport mechanism 7 (holding body 7c).

[0028] The processing liquid supply unit 30 is configured to supply processing liquid L1 to the liquid processing device 10. The processing liquid supply unit 30 includes a liquid source 31, piping D3, and a valve V3. The liquid source 31 is the source of the processing liquid L1 and stores the processing liquid L1. Piping D3 extends between the liquid source 31 and the processing tank B of the liquid processing device 10. The valve V3 is provided in piping D3. The valve V3 is configured to open and close based on an operating signal from the controller Ctr. When the valve V3 is open, the processing liquid L1 is supplied from the liquid source 31 to the processing tank B of the liquid processing device 10.

[0029] The cleaning liquid supply unit 40 is configured to supply cleaning liquid L2 to the liquid treatment devices 10, 20 and the storage unit 50. The cleaning liquid supply unit 40 includes a liquid source 41 (supply source, third supply unit), piping D4 to D6, branch pipes D4a to D6a, and valves V4 to V6. The liquid source 41 is a supply source for unused cleaning liquid L2 (hereinafter referred to as unused liquid L2b) that is not used to clean the substrate W, and stores the unused liquid L2b.

[0030] Pipe D4 extends from the liquid source 41. Branch pipe D4a (third supply section) branches off from pipe D4 midway and extends toward the storage section 50. A valve V4 (third supply section) is provided in branch pipe D4a. Valve V4 is configured to open and close based on an operating signal from controller Ctr. When valve V4 is open, unused liquid L2b is supplied to the storage section 50.

[0031] Pipe D5 is connected, for example, to the downstream end of pipe D4 and extends toward the treatment tank B of the liquid treatment device 10. Branch pipe D5a branches off from pipe D5 and extends toward the storage section 50. Valve V5 is provided at the branching point between pipe D5 and branch pipe D5a. Valve V5 is configured to selectively allow unused liquid L2b to flow to either the downstream side of pipe D5 or branch pipe D5a by opening and closing based on an operating signal from controller Ctr.

[0032] When valve V5 is open on the pipe D5 side and closed on the branch pipe D5a side, unused liquid L2b is supplied to the treatment tank B of the liquid treatment device 10. The unused liquid L2b supplied to the treatment tank B of the liquid treatment device 10 is used, for example, to clean the treatment tank B, which has become contaminated by the treatment of the substrate W with the treatment liquid L1. On the other hand, when valve V5 is closed on the pipe D5 side and open on the branch pipe D5a side, unused liquid L2b is supplied to the storage section 50. When unused liquid L2b is not supplied to the treatment tank B of the liquid treatment device 10, the opening and closing of valve V5 may be controlled so that unused liquid L2b is continuously (at all times) supplied to the storage section 50 in order to suppress the growth of microorganisms (e.g., bacteria) in pipe D5. Note that valves may be provided downstream of the branching point of pipe D5 and on the branch pipe D5a, and each valve may be controlled so that when one valve is open, the other valve is closed.

[0033] Pipe D6 is connected, for example, to the middle of pipe D4 and extends toward the treatment tank B of the liquid treatment device 20. Branch pipe D6a branches off from the middle of pipe D6 and extends toward the storage section 50. A valve V6 (switching section) is provided at the branching point between pipe D6 and branch pipe D6a. Valve V6 is configured to selectively flow unused liquid L2b to either the downstream side of pipe D6 or branch pipe D6a by opening and closing based on an operating signal from controller Ctr.

[0034] When valve V6 is open on the pipe D6 side and closed on the branch pipe D6a side, unused liquid L2b is supplied to the treatment tank B of the liquid treatment device 20. The unused liquid L2b supplied to the treatment tank B of the liquid treatment device 20 is used to clean the substrate W. On the other hand, when valve V6 is closed on the pipe D6 side and open on the branch pipe D6a side, unused liquid L2b is supplied to the storage unit 50. When unused liquid L2b is not supplied to the treatment tank B of the liquid treatment device 20, the opening and closing of valve V6 may be controlled so that unused liquid L2b is continuously (at all times) supplied to the storage unit 50 in order to suppress the growth of microorganisms (e.g., bacteria) in pipe D6. Note that valves may be provided downstream of the branching point in pipe D6 and on the branch pipe D6a, and each valve may be controlled so that when one valve is open, the other valve is closed.

[0035] The storage unit 50 is configured to store unused liquid L2b supplied through branch pipes D4a to D6a, or used liquid L2a (hereinafter referred to as drained liquid L2c) discharged from the treatment tank B of the liquid treatment device 20 through piping D2. In this specification, the liquid stored in the storage unit 50 will be collectively referred to as drained liquid L2c.

[0036] A pipe D7 for disposing of the drained liquid L2c is connected to the storage section 50. A valve V7 is provided on the pipe D7. The valve V7 is configured to open and close based on an operating signal from the controller Ctr. When the valve V7 is opened, the drained liquid L2c is discharged from the storage section 50 as waste liquid.

[0037] The storage section 50 is equipped with a resistivity meter R2 (first resistivity meter) configured to measure the resistivity of the drainage liquid L2c stored in the storage section 50. The resistivity measured by the resistivity meter R2 is transmitted to the controller Ctr.

[0038] Sensors SE1 and SE2 are provided in the storage unit 50. Sensor SE1 is a so-called particle counter and is configured to count the number of particles present in the wastewater L2c stored in the storage unit 50. The number of particles measured by sensor SE1 is transmitted to the controller Ctr.

[0039] Sensor SE2 (detection unit) is configured to detect the amount of drainage liquid L2c stored in the storage unit 50. Sensor SE2 may be, for example, a liquid level sensor (water level gauge) and indirectly detect the amount of drainage liquid L2c by measuring the liquid level of the drainage liquid L2c in the storage unit 50 (height from the bottom wall of the storage unit 50 to the liquid level of the drainage liquid L2c). The amount of drainage liquid L2c measured by sensor SE2 is transmitted to controller Ctr.

[0040] The storage section 50 is provided with a pipe D9 (first supply section) extending from the storage section 50 to the treatment tank B of the liquid treatment device 20. A pump P1 (first supply section) is provided in the pipe D9. The pump P1 is configured to operate based on an operating signal from the controller Ctr and to supply the wastewater L2c stored in the storage section 50 to the treatment tank B of the liquid treatment device 20.

[0041] The gas supply unit 60 includes a gas source 61, piping D8, and a valve V8. The gas source 61 stores an inert gas (e.g., nitrogen gas) and functions as a gas supply source. Piping D8 extends between the gas source 61 and the storage unit 50. Valve V8 is provided in piping D8. Valve V8 is configured to open and close based on an operating signal from the controller Ctr. When valve V8 is open, inert gas is supplied from the gas source 61 to the storage unit 50.

[0042] The circulation unit 70 is configured to circulate the wastewater L2c stored in the storage unit 50. The circulation unit 70 includes piping D10 (circulation line), pump P2, heater HE, filter F, and irradiation unit IR.

[0043] One end of pipe D10 is connected to a predetermined location in the storage section 50, and the other end of pipe D10 is connected to another location in the storage section 50. From the viewpoint of suppressing the accumulation of drainage liquid L2c in the storage section 50, the one end and the other end of pipe D10 may be separated as far apart as possible.

[0044] Pump P2 operates based on an operating signal from controller Ctr and is configured to suck the drainage liquid L2c from the storage unit 50 from one end of pipe D10 and to release the sucked drainage liquid L2c back into the storage unit 50 from the other end of pipe D10. As a result, the drainage liquid L2c stored in the storage unit 50 circulates through pipe D10.

[0045] The heater HE operates based on an operating signal from the controller Ctr and is configured to heat the wastewater L2c flowing through the pipe D10. The heater HE may heat the wastewater L2c to, for example, 60°C to 80°C. The filter F is installed in the pipe D10 and is configured to collect foreign matter (e.g., particles) contained in the wastewater L2c flowing through the pipe D10. When the wastewater L2c is heated by the heater HE, the efficiency of collecting foreign matter in the filter F can be increased.

[0046] The irradiation unit IR operates based on an operating signal from the controller Ctr and is configured to irradiate energy beams toward the wastewater L2c flowing through the piping D10. The energy beams irradiated by the irradiation unit IR are not particularly limited as long as they can kill microorganisms (e.g., bacteria) contained in the wastewater L2c, but may be ultraviolet rays, electron beams, or radiation, for example. To efficiently remove microorganisms with energy beams from the irradiation unit IR, the piping D10 may be made of a transparent material. Energy beams from the irradiation unit IR may also be irradiated toward the wastewater L2c stored in the storage unit 50.

[0047] [Controller Details] Next, with reference to Figure 3, the controller Ctr will be explained in more detail. The controller Ctr has a reading unit M1, a storage unit M2, a processing unit M3, and an instruction unit M4 as functional modules. These functional modules are merely a convenient division of the controller Ctr's functions into multiple modules, and do not necessarily mean that the hardware constituting the controller Ctr is divided into such modules. Each functional module is not limited to being realized by program execution, but may also be realized by a dedicated electrical circuit (e.g., a logic circuit) or an integrated circuit (ASIC: Application Specific Integrated Circuit) that integrates these.

[0048] The reading unit M1 is configured to read a program from a computer-readable recording medium RM. The recording medium RM stores a program for operating each part of the substrate processing system 1. The recording medium RM may be, for example, a semiconductor memory, an optical recording disk, a magnetic recording disk, or a magneto-optical recording disk. In this specification, each part of the substrate processing system 1 may include valves V1 to V8, pumps P1 and P2, a heater HE, an irradiation unit IR, and the like.

[0049] The memory unit M2 is configured to store various types of data. For example, the memory unit M2 may store programs read from the recording medium RM by the reading unit M1, setting parameters (so-called processing recipes) for operating each part of the board processing system 1, and setting data input from the operator via an external input device (not shown). The memory unit M2 may also receive and store data such as resistivity values ​​measured by resistivity meters R1 and R2, particle count measured by sensor SE1, and the amount of wastewater L2c detected by sensor SE2.

[0050] The processing unit M3 is configured to process various types of data. For example, the processing unit M3 may be configured to generate operation signals for operating each part of the substrate processing system 1 based on various types of data stored in the storage unit M2.

[0051] The instruction unit M4 is configured to transmit the operation signals generated in the processing unit M3 to each part of the substrate processing system 1.

[0052] The hardware of the controller Ctr may consist of, for example, one or more control computers. The controller Ctr may include circuit C1 as a hardware configuration, as shown in Figure 4. Circuit C1 may consist of electrical circuit elements. Circuit C1 may include, for example, a processor C2, memory C3, storage C4, driver C5, and input / output ports C6.

[0053] The processor C2 may be configured to implement each of the above-described functional modules by executing a program in cooperation with at least one of the memory C3 and storage C4 and performing signal input and output via the input / output port C6. The memory C3 and storage C4 may function as a storage unit M2. The driver C5 may be a circuit configured to drive each part of the board processing system 1. The input / output port C6 may be configured to mediate signal input and output between the driver C5 and each part of the board processing system 1.

[0054] The substrate processing system 1 may have one controller Ctr, or it may have a group of controllers (control unit) composed of multiple controllers Ctr. If the substrate processing system 1 has a group of controllers, the carrier loading / unloading unit 2, the lot formation unit 3, the lot placement unit 4, and the lot processing unit 5 may each be controlled by separate controllers Ctr, or at least two of the carrier loading / unloading unit 2, the lot formation unit 3, the lot placement unit 4, and the lot processing unit 5 may be controlled by one controller Ctr. If the substrate processing system 1 has a group of controllers, each of the above functional modules may be realized by one controller Ctr, or by a combination of two or more controllers Ctr. If the controller Ctr is composed of multiple computers (circuits C1), each of the above functional modules may be realized by one computer (circuit C1), or by a combination of two or more computers (circuits C1). The controller Ctr may have multiple processors C2. In this case, each of the above functional modules may be realized by one processor C2, or by a combination of two or more processors C2.

[0055] [Substrate Processing Method] Next, referring to Figure 5, we will explain the process of reusing the wastewater L2c generated when the substrate W, which has been treated with the processing liquid L1 in the liquid processing apparatus 10, is washed with the cleaning liquid L2 (unused liquid L2b) for cleaning the substrate W.

[0056] First, the controller Ctr controls the transport mechanism 7 and the holding member HM of the liquid processing device 20 to place the substrate W, which has been processed with the processing liquid L1 in the liquid processing device 10, into the processing tank B of the liquid processing device 20. In this state, the controller Ctr controls the valve V6 to supply unused liquid L2b from the liquid source 41 to the processing tank B of the liquid processing device 20 through the pipes D4 and D6 (see step S1 in Figure 5). As a result, the substrate W in the processing tank B of the liquid processing device 20 is cleaned by the unused liquid L2b, and used liquid L2a is generated in the processing tank B.

[0057] As shown in Figure 6, when cleaning the substrate W with unused solution L2b is first started, a large amount of processing solution L1 is mixed in with the used solution L2a, so the resistivity is close to 0 (see part a in Figure 6). Subsequently, as cleaning the substrate W with unused solution L2b continues, the concentration of processing solution L1 in the used solution L2a decreases, and the resistivity gradually increases (see part b in Figure 6). When the substrate W is sufficiently cleaned, the resistivity is close to the value of unused solution L2b (see part c in Figure 6).

[0058] Next, the controller Ctr determines whether the resistivity value of the used fluid L2a transmitted from the resistivity meter R1 is equal to or greater than a predetermined setpoint T1 (second setpoint) (see step S2 in Figure 5). The setpoint T1 may be, for example, 0.1 MΩ·cm, 1 MΩ·cm, 3 MΩ·cm, 6 MΩ·cm, 9 MΩ·cm, 12 MΩ·cm, or 14 MΩ·cm.

[0059] If the controller Ctr determines that the resistivity value of the resistivity meter R1 is less than the set value T1 (see "NO" in step S2 of Figure 5), it determines that the cleanliness of the used liquid L2a is not suitable for reuse, and controls valve V2 to discard the used liquid L2a through piping D2 and branch pipe D2a. Then, it returns to step S2 and continues discarding the used liquid L2a until the resistivity value of the resistivity meter R1 becomes equal to or greater than the set value T1. On the other hand, if the controller Ctr determines that the resistivity value of the resistivity meter R1 is less than the set value T1 (see "YES" in step S2 of Figure 5), it controls valve V2 to supply the used liquid L2a to the storage unit 50 through piping D2 (see step S4 of Figure 4).

[0060] Next, the controller Ctr determines whether the value of sensor SE2 is equal to or greater than a predetermined set value T2 (see step S5 in Figure 5). The set value T2 may be set appropriately based on the capacity of the storage unit 50, the amount of drained liquid L2c used in the liquid treatment devices 10 and 20, etc.

[0061] If the controller Ctr determines that the value of sensor SE2 is less than the set value T2 (see "NO" in step S5 of Figure 5), it determines that the amount of drained liquid L2c in the storage unit 50 is not sufficient for reuse. Therefore, it controls valve V4 to supply unused liquid L2b from the liquid source 41 to the storage unit 50 through piping D4 and branch pipe D4a until the value of sensor SE2 becomes equal to or greater than the set value T2 (see step S6 of Figure 5). On the other hand, if the controller Ctr determines that the value of sensor SE2 is equal to or greater than the set value T2 (see "YES" in step S5 of Figure 5), it proceeds to step S7.

[0062] In step S7, the controller Ctr determines whether the resistivity value of the drainage liquid L2c transmitted from the resistivity meter R2 is greater than or equal to a predetermined set value T3 (first set value), and whether the value of the sensor SE1 is less than or equal to a predetermined set value T4. The set value T3, like the set value T1, may be, for example, 0.1 MΩ·cm, 1 MΩ·cm, 3 MΩ·cm, 6 MΩ·cm, 9 MΩ·cm, 12 MΩ·cm, or 14 MΩ·cm. The set value T4 may be, for example, 100 particles of 0.1 μm or larger, or 10 particles of 0.1 μm or larger. Note that at the set value T4, the particle size may be 0.02 μm or larger.

[0063] If the controller Ctr determines that the resistivity value of the wastewater L2c transmitted from the resistivity meter R2 is greater than or equal to the set value T3, and the value of sensor SE1 is not less than or equal to the set value T4 (see "NO" in step S7 of Figure 5), it determines that the wastewater L2c contains a large number of particles and is unsuitable for reuse, or that the cleanliness of the wastewater L2c is unsuitable for reuse. Therefore, the controller Ctr controls valve V7 to discard the wastewater L2c through piping D7 (see step S8 of Figure 5). Alternatively, the controller Ctr controls valve V4 to supply unused liquid L2b from the liquid source 41 to the storage unit 50 through piping D4 and branch pipe D4a until the above conditions are met (see step S8 of Figure 5).

[0064] On the other hand, if the controller Ctr determines that the resistivity value of the wastewater L2c transmitted from the resistivity meter R2 is equal to or greater than the set value T3, and the value of the sensor SE1 is equal to or less than the set value T4 (see "YES" in step S7 of Figure 5), it controls the pump P1 to supply the wastewater L2c to the processing tank B of the liquid processing device 20 (see step S9 of Figure 5). As a result, the subsequent substrate W is washed in the processing tank B of the liquid processing device 20 by wastewater L2c with a certain degree of cleanliness.

[0065] [Effect] According to the above example, the storage unit 50 stores wastewater L2c having a resistivity value of T3 or higher. In other words, wastewater L2c with a certain degree of water quality is stored in the storage unit 50. Therefore, by using this wastewater L2c for cleaning the substrate W in the liquid treatment device 20 (for example, rough cleaning before the final cleaning), it is possible to properly clean the substrate W while suppressing the consumption of cleaning solution L2.

[0066] In the above example, used liquid L2a having a resistivity value of T1 or higher is supplied to the storage unit 50. In other words, used liquid L2a with a certain degree of water quality is supplied from the liquid treatment device 20 to the storage unit 50. Therefore, it becomes easier to maintain the water quality of the wastewater L2c stored in the storage unit 50.

[0067] In the above example, the set values ​​T1 and T2 can each be set to 0.1 MΩ·cm. In this case, it becomes possible to use wastewater L2c with good water quality for cleaning the substrate W in the liquid treatment device 20.

[0068] As shown in the above example, if the resistivity of the wastewater L2c measured by resistivity meter R1 is less than the set value T3, the wastewater L2c may be discarded from the storage section 50. In this case, since the wastewater with low water quality is removed from the storage section 50, it becomes easier to maintain the water quality of the wastewater L2c stored in the storage section 50.

[0069] According to the above example, if the resistivity meter R1 of the wastewater L2c measured by resistivity meter R2 is less than the set value T3, unused liquid L2b can be supplied from the liquid source 41 to the storage unit 50 until the resistivity meter R1 of the wastewater L2c becomes equal to or greater than the set value T3. In this case, it is possible to maintain the water quality of the wastewater L2c in the storage unit 50 at or above a predetermined level.

[0070] As shown in the above example, if the amount of wastewater L2c detected by the sensor SE2 is less than the set value T2, unused liquid L2b may be supplied from the liquid source 41 to the storage unit 50 until the amount of wastewater L2c in the storage unit 50 becomes equal to or greater than the set value T2. In this case, a state in which a predetermined amount or more of wastewater L2c is stored in the storage unit 50 is maintained. Therefore, it is possible to prevent a shortage of wastewater L2c used for cleaning the substrate W.

[0071] As shown in the above example, used liquid L2a discharged from multiple liquid treatment devices 20 can be stored as wastewater L2c in a single storage unit 50. In this case, the management of the water quality of wastewater L2c and the management of the amount of wastewater L2c in the storage unit 50 are centralized. Therefore, the control of wastewater L2c in the storage unit 50 becomes easier.

[0072] As shown in the above example, when unused liquid L2b is not supplied to the treatment tank B of the liquid treatment devices 10 and 20, the opening and closing of valves V5 and V6 can be controlled so that unused liquid L2b is continuously (constantly) supplied to the storage unit 50. In this case, even if cleaning liquid L2 is not used in the liquid treatment devices 10 and 20, cleaning liquid L2 will not accumulate in the piping D5 and D6. Therefore, it is possible to suppress the growth of microorganisms such as bacteria in the cleaning liquid L2. In addition, since the cleaning liquid L2 that is continuously discharged to suppress the growth of microorganisms is supplied to the storage unit 50, the discharged cleaning liquid L2 can be reused. Therefore, it is possible to reduce the amount of cleaning liquid L2 consumed.

[0073] As shown in the above example, the irradiation unit IR can irradiate the wastewater L2c stored in the storage unit 50 with energy rays. In this case, it becomes possible to suppress the growth of microorganisms in the wastewater L2c stored in the storage unit 50.

[0074] As shown in the above example, the gas supply unit 60 can supply an inert gas to the storage unit 50. In this case, carbon dioxide and other substances in the atmosphere become less likely to dissolve in the wastewater L2c stored in the storage unit 50. Therefore, it is possible to suppress the deterioration of the water quality of the wastewater L2c stored in the storage unit 50.

[0075] In the above example, the circulation unit 70 can circulate the wastewater L2c stored in the storage unit 50 through the piping D10. Furthermore, a filter F configured to collect particles contained in the wastewater L2c may be installed in the piping D10. In this case, when the wastewater L2c stored in the storage unit 50 is used for cleaning the substrate W in the liquid treatment device 20, the adhesion of particles to the substrate W is suppressed. Therefore, it becomes possible to improve the quality of the substrate W after the cleaning process.

[0076] [Differentiation] The disclosures herein should be considered in all respects to be illustrative and not restrictive. Various omissions, substitutions, and modifications may be made to the above examples without departing from the claims and the gist thereof.

[0077] (1) The storage unit 50 may be located below the liquid treatment devices 10 and 20, as shown in Figure 2. In this case, the storage unit 50 and the liquid treatment devices 10 and 20 may be installed on the same floor (level) of the building, or on different floors (levels).

[0078] (2) The storage unit 50 may be located above the liquid processing equipment 10 and 20, as shown in Figure 7. In the example of Figure 7, the lot processing unit 5 may further include a temporary storage unit 80 located below the liquid processing equipment 10 and 20. The temporary storage unit 80 may be configured to temporarily store unused liquid L2b supplied through branch pipes D4a to D6a, or used liquid L2a (waste liquid L2c) discharged from the processing tank B of the liquid processing equipment 20 through piping D2. The waste liquid L2c stored in the temporary storage unit 80 may be supplied to the storage unit 50 by a pump P3 through piping D11. The waste liquid L2c from the storage unit 50 may be supplied to the liquid processing equipment 20 by gravity through piping D12 extending between the storage unit 50 and the processing tank B of the liquid processing equipment 20. A valve V9 configured to be openable and closable by a controller Ctr may be provided in piping D12.

[0079] (3) The drained liquid L2c from the storage section 50 may be supplied in a shower-like manner to the substrate W located in the processing tank B of the liquid processing device 20.

[0080] (4) The drained liquid L2c from the storage unit 50 may be supplied to a liquid processing device 20 of a different substrate processing system 1.

[0081] (5) The liquid source 41 for the cleaning liquid L2 may be present individually for each element to which the cleaning liquid L2 is supplied (liquid treatment device 10, 20 and storage unit 50), or one liquid source 41 may be present for at least two of these elements.

[0082] (6) The storage units 50 may be provided separately for each of the liquid treatment devices 10 and 20. In this case, the storage unit 50 provided for the liquid treatment device 10 will store the wastewater L2c from the liquid treatment device 10, and the storage unit 50 provided for the liquid treatment device 20 will store the wastewater L2c from the liquid treatment device 20. Therefore, for example, even if the water quality of the wastewater L2c discharged from the liquid treatment device 20 is lower than that of the wastewater L2c discharged from the liquid treatment device 10, the wastewater L2c discharged from the liquid treatment device 20 will not affect the water quality of the wastewater L2c in the storage unit 50 provided for the liquid treatment device 10. Thus, it is possible to individually control the use of wastewater L2c in the liquid treatment devices 10 and 20 according to the water quality status of the wastewater L2c in each storage unit 50.

[0083] (7) The controller Ctr may selectively supply the drained liquid L2c from the storage unit 50 to the required liquid processing device 20 from among the multiple liquid processing devices 20, according to the processing recipe of the substrate.

[0084] (8) As illustrated in Figure 8, an outer tank OF (overflow tank) may be provided outside the treatment tank B (inner tank) of the liquid treatment apparatus 10, 20. The outer tank OF may be configured to temporarily store used liquid L2a that overflows from the treatment tank B. A pipe D2 is connected to the outer tank OF, and the used liquid L2a in the outer tank OF may be discharged to the storage section 50 through the pipe D2. The waste liquid L2c in the storage section 50 may be returned to the treatment tank B by the pipe D9 and pump P1, as in the example in Figure 2. That is, the waste liquid L2c in the storage section 50 may be circulated through the pipe D9, the treatment tank B, the outer tank OF, and the pipe D2.

[0085] In the example shown in Figure 8, the substrate W is cleaned by the cleaning solution (unused solution L2b or wastewater L2c) stored in the processing tank B, and the used solution L2a that overflows from the processing tank B into the outer tank OF is discharged to the storage unit 50 as wastewater L2c. Therefore, compared to the case where the cleaning solution supplied to the substrate W is immediately discharged to the storage unit 50 as wastewater L2c, the amount of cleaning solution consumed can be further reduced. Also, in the example shown in Figure 8, the wastewater L2c stored in the storage unit 50 is repeatedly reused through the piping D9 for cleaning the substrate W. Therefore, the amount of cleaning solution consumed can be further reduced.

[0086] If no cleaning solution L2 is stored in the storage unit 50, in the initial stages of cleaning the substrate W, unused solution L2b may be supplied from the cleaning solution supply unit 40 to the processing tank B of the liquid processing devices 10 and 20. Once a certain amount of wastewater L2c discharged from the outer tank OF has accumulated in the storage unit 50, the wastewater L2c from the storage unit 50 may be returned to the processing tank B via the piping D9, thereby circulating the wastewater L2c. Alternatively, a certain amount of cleaning solution L2 may be stored in the storage unit 50 beforehand, and this cleaning solution L2 may be supplied to the processing tank B via the piping D9. After that, the wastewater L2c discharged from the outer tank OF to the storage unit 50 may be circulated. Furthermore, wastewater L2c may be discharged to the storage unit 50 from at least one of the processing tank B and the outer tank OF.

[0087] [Other examples] Example 1. An example of a substrate processing apparatus comprises a first cleaning unit configured to clean substrates processed with a processing liquid using a cleaning liquid, a storage unit configured to store wastewater, which is the cleaning liquid discharged from the first cleaning unit, a first resistivity meter provided in the storage unit and configured to measure the resistivity value of the wastewater stored in the storage unit, a first supply unit configured to supply the wastewater stored in the storage unit to the first cleaning unit, and a control unit. The control unit is configured to control the first supply unit to supply wastewater from the storage unit to the first cleaning unit when the resistivity value of the wastewater measured by the first resistivity meter is equal to or greater than a first set value. In this case, wastewater having a resistivity value equal to or greater than the first set value is stored in the storage unit. That is, wastewater with a certain degree of water quality is stored in the storage unit. Therefore, by using this wastewater for cleaning the substrate in the first cleaning unit (for example, rough cleaning before the final cleaning), it is possible to properly clean the substrate while suppressing the consumption of cleaning liquid.

[0088] Incidentally, in the cleaning process of circuit boards, large quantities of cleaning solution (for example, more than 600 liters) are sometimes used. Traditionally, all used cleaning solution was discarded, resulting in a significant environmental burden and cost burden, and there was a strong demand for reducing both the environmental impact and costs. As described above, the device in Example 1 reduces the amount of cleaning solution consumed, making it possible to achieve both a lower environmental impact and lower costs.

[0089] Example 2. In the apparatus of Example 1, the first setting value may be 0.1 MΩ·cm. In this case, it becomes possible to use wastewater of good quality for cleaning the substrate in the first cleaning section.

[0090] Example 3. The apparatus of Example 1 or Example 2 further comprises a second resistivity meter provided in the first cleaning section and configured to measure the resistivity of the used cleaning solution used to clean the substrate in the first cleaning section, and a second supply section configured to supply the used cleaning solution as wastewater to the storage section. The control unit may be configured to control the second supply section to supply the used cleaning solution from the first cleaning section to the storage section when the resistivity of the used cleaning solution measured by the second resistivity meter is equal to or greater than a second set value. In this case, used cleaning solution with a certain degree of water quality is supplied from the first cleaning section to the storage section. Therefore, it becomes easier to maintain the water quality of the wastewater stored in the storage section.

[0091] Example 4. In any of the devices in Examples 1 to 3, the control unit may be configured to perform a process of discarding the wastewater from the storage unit when the resistivity value of the wastewater measured by the first resistivity meter is less than a first set value. In this case, since wastewater with low water quality is removed from the device, it becomes easier to maintain the water quality of the wastewater stored in the storage unit.

[0092] Example 5. Any of the devices in Examples 1 to 3 may further include a third supply unit configured to supply unused liquid, which is cleaning liquid not used for cleaning substrates, to a storage unit, and the control unit may be configured to control the third supply unit to supply unused liquid to the storage unit until the resistivity value of the wastewater measured by the first resistivity meter is less than a first set value, until the resistivity value of the wastewater becomes equal to or greater than the first set value. In this case, it is possible to maintain the water quality of the wastewater in the storage unit at or above a predetermined level.

[0093] Example 6. Any of the devices in Examples 1 to 5 further comprises a third supply unit configured to supply unused liquid, which is cleaning liquid not used for cleaning substrates, to a storage unit, and a detection unit configured to detect the amount of wastewater stored in the storage unit. The control unit may be configured to control the third supply unit and, when the amount of wastewater detected by the detection unit is less than or equal to a third set value, to supply unused liquid to the storage unit until the amount of wastewater reaches or exceeds the third set value. In this case, a state in which a predetermined amount or more of wastewater is stored in the storage unit is maintained. Therefore, it is possible to prevent a shortage of wastewater used for cleaning substrates.

[0094] Example 7. Any apparatus from Examples 1 to 6 may further include a second cleaning unit configured to clean the substrate treated with the processing liquid with a cleaning liquid, and a storage unit configured to store the wastewater discharged from the first cleaning unit and the second cleaning unit, respectively. In this case, wastewater from multiple cleaning units is stored in a single storage unit. Therefore, the management of the water quality of the wastewater and the management of the amount of wastewater in the storage unit are centralized. Consequently, control of the wastewater in the storage unit becomes easier.

[0095] Example 8. Any apparatus of Examples 1 to 6 may further include a second cleaning unit configured to clean a substrate treated with a processing liquid with a cleaning liquid, and another storage unit configured to store wastewater, which is the cleaning liquid discharged from the second cleaning unit. In this case, the storage unit and the other storage unit each separately store the wastewater discharged from the first cleaning unit and the wastewater discharged from the second cleaning unit. Therefore, for example, even if the water quality of the wastewater discharged from the second cleaning unit is lower than that of the wastewater discharged from the first cleaning unit, the wastewater discharged from the second cleaning unit does not affect the water quality of the wastewater in the storage unit. Thus, it is possible to individually control the use of wastewater in the first cleaning unit and the second cleaning unit according to the water quality conditions of the wastewater in the storage unit and the other storage unit, respectively.

[0096] Example 9. Any apparatus of Examples 1 to 8 further comprises a second cleaning unit configured to clean a substrate treated with a processing liquid with a cleaning liquid, and a first supply unit configured to supply wastewater stored in a storage unit to the first and second cleaning units, and a control unit may be configured to perform a process to control the first supply unit to selectively supply wastewater from the storage unit to either the first or second cleaning unit according to the processing recipe of the substrate. In this case, the same effects and advantages as the apparatus of Example 7 can be obtained.

[0097] Example 10. Any apparatus of Examples 1 to 9 further comprises a cleaning fluid supply source, piping that fluidly connects the supply source and the first cleaning unit, a branch pipe that branches off from the piping and is fluidly connected to a storage unit, and a switching unit configured to switch the flow of cleaning fluid from the supply source to either the first cleaning unit or the storage unit, wherein the control unit is configured to control the switching unit to supply cleaning fluid from the supply source to the first cleaning unit when a substrate is being cleaned in the first cleaning unit, and to continuously supply cleaning fluid from the supply source to the storage unit when a substrate is not being cleaned in the first cleaning unit. According to Example 9, when a substrate is not being cleaned in the first cleaning unit, cleaning fluid is continuously supplied from the supply source to the storage unit through part of the piping and the branch pipe. Therefore, even when cleaning fluid is not used in the first cleaning unit, the cleaning fluid does not stagnate in the piping. Thus, it is possible to suppress the growth of microorganisms such as bacteria in the cleaning fluid. In addition, since the cleaning fluid that is continuously discharged to suppress the growth of microorganisms is supplied to the storage unit, the discharged cleaning fluid can be reused. Therefore, it becomes possible to reduce the amount of cleaning solution consumed.

[0098] Example 11. Any of the devices in Examples 1 to 10 may further include an irradiation unit configured to irradiate the wastewater stored in the storage unit with energy rays. In this case, it becomes possible to suppress the growth of microorganisms in the wastewater stored in the storage unit.

[0099] Example 12. Any of the devices in Examples 1 to 11 may further include a gas supply unit configured to supply an inert gas to the storage unit. In this case, carbon dioxide and other substances in the atmosphere will be less likely to dissolve in the wastewater stored in the storage unit. Therefore, it is possible to suppress the deterioration of the water quality of the wastewater stored in the storage unit.

[0100] Example 13. In any of the apparatuses of Examples 1 to 12, the first cleaning unit includes an inner tank in which substrates treated with a processing liquid are cleaned with a cleaning liquid, and an outer tank provided outside the inner tank and configured to temporarily store cleaning liquid that overflows from the inner tank and flows in, and the storage unit may be configured to store waste liquid, which is cleaning liquid discharged from the outer tank. In this case, the substrate is cleaned with the cleaning liquid stored in the inner tank, and the cleaning liquid that overflows from the inner tank into the outer tank is discharged as waste liquid to the storage unit. Therefore, it is possible to further reduce the amount of cleaning liquid consumed compared to the case in which the cleaning liquid supplied to the substrate is immediately discharged as waste liquid to the storage unit.

[0101] Example 14. The apparatus of Example 13 may further include a circulation unit configured to supply the wastewater stored in the storage unit back to the inner tank through a circulation line. In this case, the wastewater stored in the storage unit is repeatedly reused through the circulation line for cleaning the substrate. This makes it possible to further reduce the consumption of cleaning solution.

[0102] Example 15. Any apparatus from Examples 1 to 12 further comprises a circulation unit configured to supply the wastewater stored in the storage unit back to the storage unit through a circulation line, and the circulation line may be provided with a filter configured to capture particles contained in the wastewater. In this case, when the wastewater stored in the storage unit is used for cleaning the substrate in the first cleaning unit, the adhesion of particles to the substrate is suppressed. Therefore, it is possible to improve the quality of the substrate after the cleaning process.

[0103] Example 16. An example of a substrate processing method includes a first step of washing a substrate processed with a processing solution in a first washing section with a cleaning solution; a second step of storing the wastewater, which is the cleaning solution discharged from the first washing section, in a storage section; a third step of measuring the resistivity of the wastewater stored in the storage section using a first resistivity meter; and a fourth step of supplying the wastewater from the storage section to the first washing section by a first supply section if the resistivity of the wastewater is equal to or greater than a first set value. In this case, the same effects and advantages as the apparatus in Example 1 can be obtained.

[0104] Example 17. In the method of Example 16, the first set value may be 0.1 MΩ·cm. In this case, the same effects as the apparatus in Example 2 can be obtained.

[0105] Example 18. The method of Example 16 or Example 17 may further include a fifth step of measuring the resistivity of the used cleaning solution, which is the cleaning solution used to clean the substrate in the first cleaning unit, using a second resistivity meter, and a sixth step of supplying the used cleaning solution from the cleaning unit to the storage unit by the second supply unit if the resistivity of the used cleaning solution is equal to or greater than a second set value. In this case, the same effects and advantages as the apparatus of Example 3 can be obtained.

[0106] Example 19. Any of the methods in Examples 16 to 18 may further include a seventh step of discarding the wastewater from the storage section if the resistivity of the wastewater is less than a first set value. In this case, the same effects as the apparatus in Example 4 can be obtained.

[0107] Example 20. Any of the methods in Examples 16 to 18 may further include an eighth step in which, if the resistivity of the drainage liquid is less than a first set value, a third supply unit supplies unused liquid, which is cleaning liquid not used for cleaning the substrate, to the storage unit until the resistivity of the drainage liquid becomes equal to or greater than the first set value. In this case, the same effects and advantages as the apparatus in Example 5 can be obtained.

[0108] Example 21. Any of the methods in Examples 16 to 20 may further include a ninth step in which a detection unit detects the amount of wastewater stored in the storage unit, and a tenth step in which, if the amount of wastewater detected by the detection unit is less than or equal to a third set value, a third supply unit supplies unused cleaning liquid, which is not used to clean the substrate, to the storage unit until the amount of wastewater becomes equal to or greater than the third set value. In this case, the same effects and advantages as the apparatus in Example 6 can be obtained.

[0109] Example 22. Any of the methods in Examples 16 to 21 further includes an eleventh step of cleaning the substrate treated with the processing liquid with a cleaning liquid in a second cleaning section, wherein the second step may include storing the waste liquid, which is the cleaning liquid discharged from the first or second cleaning section, in a storage section. In this case, the same effects and advantages as the apparatus in Example 7 can be obtained.

[0110] Example 23. Any method from Examples 16 to 21 further includes an eleventh step of cleaning the substrate treated with the processing liquid with the cleaning liquid in a second cleaning section, and a twelfth step of storing the wastewater, which is the cleaning liquid discharged from the second cleaning section, in another storage section, wherein the second step may include storing the wastewater, which is the cleaning liquid discharged from the first cleaning section, in the storage section. In this case, the same effects and advantages as the apparatus in Example 8 can be obtained.

[0111] Example 24. Any of the methods in Examples 16 to 23 further includes an eleventh step of washing the substrate treated with the processing liquid in a second washing section with the cleaning liquid, and a fourth step may include, when the resistivity of the wastewater is equal to or greater than a first set value, the first supply section selectively supplying the wastewater from the storage section to the first washing section or the second washing section according to the processing recipe of the substrate. In this case, the same effects as the apparatus in Example 9 can be obtained.

[0112] Example 25. In any of the methods in Examples 16 to 24, the first step may include switching a switching unit located at the branching point of a pipe that fluidly connects a supply source and the first cleaning unit, and a branch pipe that branches off from the pipe and is fluidly connected to a storage unit, depending on whether or not the substrate is being cleaned in the first cleaning unit. This allows the cleaning solution to be supplied from the supply source to the first cleaning unit through the pipe when the substrate is being cleaned in the first cleaning unit, and to be continuously supplied from the supply source to the storage unit through the pipe and branch pipe when the substrate is not being cleaned in the first cleaning unit. In this case, the same effects and advantages as the apparatus in Example 10 can be obtained.

[0113] Example 26. In any of the methods in Examples 16 to 25, the first step may include washing the substrate treated with the processing liquid in the inner tank of the first washing section with the cleaning liquid, and the second step may include storing the waste liquid, which is the cleaning liquid that overflows from the inner tank and flows into the outer tank of the first washing section and is temporarily stored in the outer tank, in the storage section. In this case, the same effects and advantages as the apparatus in Example 13 can be obtained.

[0114] Example 27. In the method of Example 26, the first step may include supplying the wastewater stored in the storage section through the outer tank back to the inner tank through the circulation line, thereby washing the substrate treated with the processing liquid in the inner tank with the wastewater. In this case, the same effects and advantages as the apparatus of Example 14 can be obtained.

[0115] Example 28. An example of a computer-readable recording medium may contain a program for causing a substrate processing apparatus to execute any of the methods in Examples 16 to 27. In this case, the same effects as the apparatus in Example 1 can be obtained. In this specification, a computer-readable recording medium may include a non-transitory computer recording medium (e.g., various main memory or auxiliary memory devices) or a transmitted signal (e.g., a data signal that can be provided over a network). [Explanation of Symbols]

[0116] 1...Substrate processing system, 5...Lot processing unit (substrate processing unit), 10...Liquid processing unit, 20...Liquid processing unit (first cleaning unit, second cleaning unit), 30...Processing liquid supply unit, 40...Cleaning liquid supply unit, 41...Liquid source (supply source, third supply unit), 50...Storage unit, 60...Gas supply unit, 70...Circulation unit, Ctr...Controller (control unit), D2...Piping (second supply unit), D4, D6...Piping, D4a...Branch pipe (third supply unit), D6a...Branch pipe, D9...Piping (first supply unit), D10 ...piping (circulation line), F...filter, IR...irradiation unit, L1...processing liquid, L2...cleaning liquid, L2b...unused liquid, L2c...drainage liquid, P1...pump (first supply unit), R1...resistivity meter (second resistance meter), R2...resistivity meter (first resistance meter), RM...recording medium, SE2...sensor (detection unit), T1...set value (second setting value), T3...set value (first setting value), V2...valve (second supply unit), V4...valve (third supply unit), V6...valve (switching unit), W...circuit board.

Claims

1. A first cleaning unit configured to clean a substrate treated with a processing liquid with a cleaning liquid, A storage unit configured to store the wastewater, which is the cleaning liquid discharged from the first cleaning unit, A first resistivity meter is provided in the storage section and is configured to measure the resistivity of the drained liquid stored in the storage section, A second resistivity meter is provided in the first cleaning unit and is configured to measure the resistivity of the used cleaning solution used to clean the substrate in the first cleaning unit, A first supply unit configured to supply the drainage liquid stored in the storage unit to the first washing unit, A second supply unit configured to supply the used liquid to the storage unit as the waste liquid, A particle counter configured to count the number of particles present in the drain liquid stored in the storage section, The source of the cleaning solution, A piping that fluidly connects the supply source and the first cleaning unit, A branch pipe that branches off from the aforementioned piping and is fluidly connected to the storage section, A switching unit configured to switch the flow of cleaning liquid from the supply source to either the first cleaning unit or the storage unit, A circulation unit configured to supply the drained liquid stored in the storage unit back to the storage unit through a circulation line made of a transparent material, An irradiation unit configured to irradiate the drainage flowing through the circulation line with energy rays, It includes a control unit, The circulation line is provided with a filter located downstream of a heater configured to collect particles contained in the wastewater and to heat the wastewater flowing through the circulation line. The control unit, When the resistivity value of the wastewater measured by the first resistivity meter is equal to or greater than a first set value, the first supply unit is controlled to supply the wastewater from the storage unit to the first washing unit. If the resistivity value of the used liquid measured by the second resistivity meter is equal to or greater than the second set value, the second supply unit is controlled to supply the used liquid from the first washing unit to the storage unit. If the resistivity of the wastewater measured by the first resistivity meter is less than the first set value, and the number of particles counted by the particle counter exceeds a predetermined other set value, the wastewater is disposed of from the storage unit. A substrate processing apparatus configured to control the switching unit to supply cleaning liquid from the supply source to the first cleaning unit when cleaning the substrate in the first cleaning unit, and to continuously supply cleaning liquid from the supply source to the storage unit when the substrate is not cleaned in the first cleaning unit.

2. The apparatus according to claim 1, wherein the first set value is 0.1 MΩ·cm.

3. The system further comprises a third supply unit configured to supply unused liquid, which is cleaning liquid not used for cleaning the substrate, to the storage unit, The apparatus according to claim 1 or 2, wherein the control unit is configured to control the third supply unit to supply the unused liquid to the storage unit until the resistivity of the wastewater measured by the first resistivity meter is less than the first set value.

4. A third supply unit is configured to supply unused cleaning liquid, which is cleaning liquid not used to clean the substrate, to the storage unit, The system further comprises a detection unit configured to detect the amount of drainage liquid stored in the storage unit, The apparatus according to any one of claims 1 to 3, wherein the control unit is configured to control the third supply unit to supply the unused liquid to the storage unit until the amount of the wastewater detected by the detection unit is equal to or less than the third set value.

5. The system further comprises a second cleaning unit configured to clean the substrate treated with the processing liquid with a cleaning liquid, The apparatus according to any one of claims 1 to 4, wherein the storage section is configured to store the wastewater discharged from the first washing section and the second washing section, respectively.

6. A second cleaning unit configured to clean the substrate treated with the processing liquid with a cleaning liquid, The apparatus according to any one of claims 1 to 4, further comprising another storage unit configured to store wastewater, which is a cleaning liquid discharged from the second cleaning unit.

7. The system further comprises a second cleaning unit configured to clean the substrate treated with the processing liquid with a cleaning liquid, The first supply unit is configured to supply the wastewater stored in the storage unit to the first washing unit and the second washing unit. The apparatus according to any one of claims 1 to 6, wherein the control unit is configured to perform a process to control the first supply unit so as to selectively supply the wastewater from the storage unit to the first washing unit or the second washing unit according to the processing recipe of the substrate.

8. The apparatus according to any one of claims 1 to 7, further comprising a gas supply unit configured to supply an inert gas to the storage unit.

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