Measurement method and substrate processing apparatus

Abstract

A measurement method according to one aspect of the present disclosure comprises a step for causing collision with a first measurement unit (100), a step for measuring a potential difference, and a step for estimating collision energy. In the step for causing collision with the first measurement unit (100), a fluid jetted from a nozzle (30) is caused to collide with the first measurement unit (100) having a thermocouple (102). In the step for measuring the potential difference, a potential difference generated in the thermocouple (102) upon collision of the fluid is measured. In the step for estimating the collision energy, the collision energy of the fluid is estimated on the basis of the measured potential difference.

Description

Technical Field

[0001] The disclosed embodiments relate to a measurement method and a substrate processing apparatus.

Background Art

[0002] In semiconductor manufacturing equipment, the adhesion of particles to a substrate such as a semiconductor wafer (hereinafter also referred to as a wafer) during the manufacturing process is one of the major factors affecting the product yield. Therefore, as a technique for removing particles adhering to the substrate, a technique of injecting a gaseous fluid such as a gas cluster onto the substrate is known (see Patent Document 1).

Prior Art Documents

Patent Documents

[0003]

Patent Document 1

Summary of the Invention

Problems to be Solved by the Invention

[0004] The present disclosure provides a technique capable of accurately measuring the collision energy of a fluid.

Means for Solving the Problems

[0005] A measurement method according to an aspect of the present disclosure includes a step of causing a collision with a first measurement unit, a step of measuring a potential difference, and a step of estimation. The step of causing a collision with the first measurement unit causes a fluid ejected from a nozzle to collide with a first measurement unit having a thermocouple. The step of measuring the potential difference measures the potential difference generated by the thermocouple when the fluid collides. The estimation step estimates the collision energy of the fluid based on the measured potential difference.

Effects of the Invention

[0006] According to the present disclosure, the collision energy of a fluid can be accurately measured. [Brief explanation of the drawing]

[0007] [Figure 1] Figure 1 is a schematic diagram showing the general configuration of a substrate cleaning apparatus according to an embodiment. [Figure 2] Figure 2 is a schematic diagram showing the general configuration of the nozzle in the substrate cleaning apparatus according to the embodiment. [Figure 3] Figure 3 is a schematic diagram showing how particles are removed from the surface of a wafer in a substrate cleaning apparatus according to an embodiment. [Figure 4] Figure 4 shows an example of the configuration of the first measuring unit according to the embodiment. [Figure 5] Figure 5 shows an example of the arrangement of temperature sensing junctions in the first measurement unit according to the embodiment. [Figure 6] Figure 6 is a diagram illustrating the principle of the collision energy measurement process according to the embodiment. [Figure 7] Figure 7 is a diagram illustrating the principle of the collision energy measurement process according to this embodiment. [Figure 8] Figure 8 is a diagram illustrating the principle of the collision energy measurement process according to the embodiment. [Figure 9] Figure 9 is a diagram illustrating the principle of the collision energy measurement process according to this embodiment. [Figure 10] Figure 10 shows an example of the configuration of the second measuring unit according to the embodiment. [Figure 11] Figure 11 shows an example of the measurement results for the first and second temperatures according to the embodiment. [Figure 12] Figure 12 is a flowchart showing an example of the procedure for measuring collision energy according to the embodiment. [Figure 13] Figure 13 is a flowchart showing another example of the procedure for measuring collision energy according to the embodiment. [Modes for carrying out the invention]

[0008] The embodiments of the measurement method and substrate processing apparatus disclosed herein will be described in detail below with reference to the attached drawings. However, the embodiments described below do not limit this disclosure. Furthermore, it should be noted that the drawings are schematic, and the dimensional relationships and ratios of each element may differ from reality. Moreover, there may be differences in dimensional relationships and ratios between drawings.

[0009] In semiconductor manufacturing equipment, the adhesion of particles to substrates such as semiconductor wafers (hereinafter also referred to as wafers) during the manufacturing process is one of the major factors affecting product yield. Therefore, a technique is known for injecting gaseous fluids such as gas clusters onto the substrate as a method to remove particles adhering to the substrate.

[0010] In this method, for example, a fluid sprayed from a nozzle collides with particles on the substrate surface, causing the particles to be ejected and removed from the surface. Therefore, accurately measuring the fluid collision energy is crucial to determining the optimal parameters for the removal process.

[0011] However, with the conventional techniques described above, accurately measuring the collision energy of a fluid is extremely difficult. This is because, while the collision energy of a fluid can be estimated to be approximately equal to the kinetic energy of the fluid, directly measuring the mass and velocity of the fluid, which are parameters for determining the kinetic energy of the fluid, is extremely difficult.

[0012] Therefore, there is a great need for a technology that can overcome the aforementioned problems and accurately measure the collision energy of fluids.

[0013] <Overview of the circuit board cleaning equipment> First, referring to FIG. 1, the schematic configuration of the substrate cleaning apparatus 1 according to the embodiment will be described. FIG. 1 is a diagram showing the schematic configuration of the substrate cleaning apparatus 1 according to the embodiment. The substrate cleaning apparatus 1 is an example of a substrate processing apparatus. Hereinafter, in order to clarify the positional relationship, an X-axis, a Y-axis, and a Z-axis orthogonal to each other are defined, and the positive direction of the Z-axis is the vertically upward direction.

[0014] As shown in FIG. 1, the substrate cleaning apparatus 1 includes a cleaning processing chamber 10, a substrate holding unit 20, a nozzle 30, a gas supply unit 40, and a dummy dispense bath 50.

[0015] The cleaning processing chamber 10 is configured such that the cleaning process of the wafer W by a fluid is performed inside. The cleaning processing chamber 10 houses the substrate holding unit 20, the nozzle 30, and the dummy dispense bath 50.

[0016] A transfer port 11 is formed in the side wall of the cleaning processing chamber 10. The wafer W is transferred into the cleaning processing chamber 10 through the transfer port 11 by a substrate transfer apparatus (not shown), and is also carried out from the cleaning processing chamber 10 to the outside through the transfer port 11.

[0017] The shutter 12 is provided at a position closing the transfer port 11 and is configured to be able to open and close the transfer port 11.

[0018] One end of an exhaust passage 13 for exhausting the atmosphere in the cleaning processing chamber 10 is connected to the floor surface of the cleaning processing chamber 10. A vacuum pump 14 is connected to the other end of this exhaust passage 13. Further, a pressure adjustment unit 15 for adjusting the pressure inside the cleaning processing chamber 10 is provided in the exhaust passage 13. Such a pressure adjustment unit 15 is, for example, a butterfly valve or the like.

[0019] The substrate holding unit 20 holds the wafer W. The substrate holding unit 20 has a holding table 21, a lifting mechanism 22, and a horizontal driving unit 23. The holding table 21 holds the wafer W in a horizontal posture. A temperature adjustment mechanism (not shown) for adjusting the temperature of the wafer W held by the holding table 21 may be provided on the holding table 21.

[0020] Furthermore, the support base 21 is configured to be able to move up and down by a lifting mechanism 22, and to be able to move horizontally by a horizontal drive unit 23.

[0021] The horizontal drive unit 23 has rails 23a and rails 23b. Rail 23a extends horizontally along a predetermined direction (the X-axis direction in the figure) on the bottom surface of the washing chamber 10 below the holding base 21. Rail 23b extends horizontally along a direction perpendicular to rail 23a (the Y-axis direction in the figure) on the bottom surface of the washing chamber 10 below the holding base 21.

[0022] Furthermore, rail 23a is configured to be movable along rail 23b, and a support base 21 is provided above rail 23a via a lifting mechanism 22. With this configuration, the support base 21 is configured to be able to move up and down by the lifting mechanism 22 and to be able to move horizontally by the horizontal drive unit 23.

[0023] The nozzle 30 injects a gaseous fluid such as gas cluster C (see Figure 2). Gas cluster C is an example of a fluid. The nozzle 30 is located on a projection 10a formed in the center of the ceiling surface of the cleaning chamber 10.

[0024] As shown in Figure 2, the nozzle 30 has a pressure chamber 31, an orifice section 32, and a gas diffusion section 33. The pressure chamber 31 is cylindrical (for example, cylindrical) and extends in the direction in which the holder 21 is located (downward in the figure).

[0025] The orifice section 32 is located at the end of the pressure chamber 31 on the side of the retaining base 21, and has a smaller cross-sectional area than the pressure chamber 31. The gas diffusion section 33 has a frustum shape (for example, a frustum shape) with space inside, and extends in the direction in which the retaining base 21 is located. The gas diffusion section 33 is connected to the orifice section 32, and its cross-sectional area increases as it approaches the retaining base 21.

[0026] In a nozzle 30 having such a configuration, gas clusters C, which are aggregates of molecules M, are generated from the molecules M of the cleaning gas supplied to the pressure chamber 31 from the gas supply passage 41 of the gas supply unit 40 by adiabatic expansion.

[0027] The nozzle 30 then sprays the generated gas cluster C toward the wafer W held in the holder 21. The nozzle 30 is configured, for example, to irradiate the gas cluster C perpendicularly to the surface of the wafer W.

[0028] Here, "perpendicular" means, for example, that the angle θ between the central axis Ax in the extending direction of the nozzle 30 and the holding surface of the holding base 21 (i.e., the surface of the wafer W) is in the range of 90° ± 15°.

[0029] The gas cluster C is ejected vertically from the nozzle 30 toward the wafer W and enters the recesses Wb of the pattern Wa formed on the surface of the wafer W, as shown in Figure 3. Inside these recesses Wb, some of the gas cluster C collides with particles P. The impact of this collision causes the particles P to detach from the wafer W and be blown away.

[0030] Furthermore, even if the gas cluster C does not directly collide with the particle P, the impact of the collision with the wafer W causes the particle P to detach from the wafer W and be blown away. The particle P then flies out of the recess Wb and is removed to the outside of the cleaning chamber 10 (see Figure 1) via the exhaust passage 13 (see Figure 1).

[0031] When the density of the pattern Wa on the wafer W is high, the dimensions of the protrusions between adjacent recesses Wb become smaller. However, in the cleaning process according to this embodiment, since the gas cluster C is sprayed perpendicularly to the surface of the wafer W, the collapse of such protrusions, or so-called pattern collapse, is suppressed.

[0032] Returning to the explanation of Figure 1, the control unit 3 moves the holding base 21 horizontally while spraying gas cluster C (see Figure 2) from the nozzle 30, sequentially moving the irradiation position of the gas cluster C on the surface of the wafer W. As a result, the entire surface of the wafer W is irradiated with gas cluster C, and particles P (see Figure 3) are removed from the entire surface of the wafer W.

[0033] The gas supply unit 40 supplies cleaning gas to the nozzle 30. The gas supply passage 41 of the gas supply unit 40 is connected to the pressure chamber 31 of the nozzle 30. The gas supply passage 41 is also connected to the CO2 supply source 44a via flow regulators 42 and 43a, and to the He supply source 44b via flow regulators 42 and 43b.

[0034] The CO2 supply source 44a is, for example, a tank for storing carbon dioxide (CO2). The flow regulator 43a adjusts the flow rate of CO2 gas supplied to the flow regulator 42. The flow regulator 43a includes an on-off valve, a flow control valve, and a flow meter, etc.

[0035] The He supply source 44b is, for example, a tank for storing helium (He). The flow regulator 43b regulates the flow rate of He gas supplied to the flow regulator 42. The flow regulator 43b includes an on-off valve, a flow control valve, and a flow meter, etc.

[0036] The flow regulator 42 adjusts the flow rates of CO2 gas and He gas supplied to the gas supply line 41. The flow regulator 42 includes an on-off valve, a flow control valve, and a flow meter.

[0037] Furthermore, a pressure sensor 45 is provided in the gas supply line 41. This pressure sensor 45 measures the pressure of CO2 gas and He gas flowing through the gas supply line 41.

[0038] When CO2 gas is injected from the nozzle 30, gas cluster C (see Figure 2) is generated. Although He gas does not easily form gas cluster C, when supplied to the nozzle 30, it can lower the partial pressure of CO2 gas in the washing chamber 10.

[0039] In other words, including He gas in the cleaning gas has two functions: to prevent collisions between gas cluster C and CO2 gas molecules, and to improve the velocity of gas cluster C generated from CO2 gas.

[0040] In this disclosure, the cleaning gas supplied to the nozzle 30 is not limited to a mixture of CO2 gas and He gas, and a wide variety of gases may be used. Also, in this disclosure, the fluid ejected from the nozzle 30 is not limited to gas clusters C, and individual molecules M may be ejected as they are.

[0041] The dummy dispensing bath 50 is installed inside the washing chamber 10. The dummy dispensing bath 50 is configured to be movable between a gas receiving position below the nozzle 30 and a retracted position near the side wall of the washing chamber 10.

[0042] The dummy dispensing bath 50 receives the gas clusters C ejected from the nozzle 30 at the gas receiving position, preventing the gas clusters C from being unintentionally ejected onto the surface of the wafer W. The dummy dispensing bath 50 discharges the received gas clusters C to the outside of the cleaning chamber 10.

[0043] Furthermore, the substrate cleaning apparatus 1 includes a control device 2. The control device 2 is, for example, a computer and comprises a control unit 3 and a storage unit 4. The storage unit 4 stores programs that control various processes performed in the substrate cleaning apparatus 1. The control unit 3 controls the operation of the substrate cleaning apparatus 1 by reading and executing the programs stored in the storage unit 4.

[0044] Such a program may have been recorded on a computer-readable storage medium and installed from that storage medium into the storage unit 4 of the control device 2. Examples of computer-readable storage mediums include hard disks (HDs), flexible disks (FDs), compact disks (CDs), magnetic optical disks (MOs), and memory cards.

[0045] In the substrate cleaning apparatus 1 configured as described above, first, the wafer W is transported into the cleaning chamber 10 by a substrate transport device (not shown), and placed on the holding table 21 through the cooperative action of support pins (not shown) and the substrate transport device.

[0046] More specifically, the wafer W, which has been transported to the vicinity of the cleaning chamber 10, is brought into a load lock chamber (not shown) that can switch between an atmospheric pressure atmosphere and a vacuum atmosphere. From this load lock chamber, the wafer W is then transported into the cleaning chamber 10, which is configured as a vacuum container, by a substrate transport device that transports the wafer W in a vacuum atmosphere.

[0047] Next, the horizontal drive unit 23 performs horizontal positioning, moving the wafer W so that the irradiation start position of the gas cluster C on the wafer W surface is the irradiation position of the gas cluster of the nozzle 30 (directly below). For example, the irradiation position of the gas cluster may be at the peripheral edge of the wafer W. In addition, the lifting mechanism 22 performs vertical positioning.

[0048] Next, gas cluster C is ejected from the nozzle 30 toward the irradiation start position on the wafer W. If the upstream side of the orifice portion 32 in the nozzle 30 is considered the primary side and the downstream side is considered the secondary side, the supply pressure, which is the pressure on the primary side of the nozzle 30, is preferably, for example, 0.5 (MPa) to 5.0 (MPa). Also, the pressure of the processing atmosphere in the cleaning chamber 10, which is the secondary side of the nozzle 30, is preferably, for example, a maximum of 200 (Pa).

[0049] The flow rates of CO2 gas and He gas are adjusted to preset levels by flow regulators 43a and 43b, and a mixed gas of CO2 gas and He gas is supplied to the nozzle 30. When the CO2 gas is supplied from the high-pressure nozzle 30 to the low-pressure washing chamber 10, it is cooled to below its condensation temperature by rapid adiabatic expansion.

[0050] Therefore, as shown in Figure 2, CO2 molecules M bond with each other through van der Waals forces, forming gas clusters C, which are aggregates of molecules M.

[0051] Furthermore, the control unit 3 controls the gas pressure in the pressure chamber 31 by adjusting the opening degree of the flow regulator 42 based on the pressure value detected by the pressure sensor 45. The pressure sensor 45 may also be configured to directly detect the pressure in the pressure chamber 31.

[0052] In the substrate cleaning process described so far, the efficiency of particle P removal largely depends on the collision energy of gas cluster C with particle P. Therefore, accurately measuring the collision energy of gas cluster C is crucial to determining the optimal parameters for the substrate cleaning process.

[0053] Conventional technologies are known to vary significantly in particle P removal efficiency depending on factors such as the gas pressure and mixing ratio of CO2 and He gases, gas temperature, and the distance between the nozzle 30 and the wafer W. However, controlling these parameters has made it extremely difficult to determine how the collision energy of gas clusters C changes.

[0054] Furthermore, in this substrate cleaning process, if there are multiple particles P with varying masses adhering to the wafer W, it is necessary to generate gas clusters C with optimal collision energies for each mass. However, with conventional techniques, it was difficult to accurately measure the collision energy of gas clusters C, making it extremely difficult to determine the optimal parameters for each particle P with multiple masses.

[0055] Thus, with conventional technology, determining the optimal parameters for substrate cleaning required a great deal of time and effort.

[0056] Therefore, in this disclosure, the collision energy of gas cluster C is measured by the measurement process described below. This allows for accurate measurement of the collision energy of gas cluster C, making it possible to easily and accurately determine the optimal parameters for the substrate cleaning process.

[0057] <Details of the measurement process> Next, the details of the collision energy measurement process according to the embodiment will be explained with reference to Figures 4 to 11. The collision energy measurement process according to the embodiment is performed using the first measurement unit 100 shown in Figure 4. Figure 4 is a diagram showing an example of the configuration of the first measurement unit 100 according to the embodiment.

[0058] As shown in Figure 4, the first measuring unit 100 has a substrate 101 and a plurality of thermocouples 102. The substrate 101 has, for example, a shape and size approximately the same as that of a wafer W (see Figure 1). This allows the first measuring unit 100 to be held comfortably on the holder 21.

[0059] The thermocouple 102 has a temperature sensing junction 102a, a first metal wire 102b, and a second metal wire 102c. The temperature sensing junction 102a is the part where the first metal wire 102b and the second metal wire 102c are in contact. The first metal wire 102b is made of a first metal. The second metal wire 102c is made of a second metal that is different from the first metal.

[0060] Examples of materials for the first metal wiring 102b and the second metal wiring 102c include alloys containing Pt (platinum) and Rh (rhodium), alloys containing Ni (nickel) and Cr (chromium), or alloys specified in JIS C1602.

[0061] At the temperature sensing junction 102a of the thermocouple 102, a potential difference is generated due to the Seebeck effect depending on the temperature of the temperature sensing junction 102a. This potential difference can be measured by a measuring instrument (not shown) connected to the first metal wiring 102b and the second metal wiring 102c.

[0062] In the first measuring unit 100, the temperature sensing junctions 102a of the multiple thermocouples 102 are arranged, for example, as shown in Figure 5. Figure 5 is a diagram showing an example of the arrangement of temperature sensing junctions 102a in the first measuring unit 100 according to the embodiment.

[0063] In this embodiment, for example, a plurality of temperature sensing junctions 102a are arranged concentrically around a reference point on the substrate 101 (for example, the center of the substrate 101) and around such reference point.

[0064] For example, in the example shown in Figure 5, if the coordinates (X, Y) of the reference point on the substrate 101 are (0, 0), then the multiple temperature sensing junctions 102a are arranged at (0, 0), (0.5, 0.5), (0.5, -0.5), (-0.5, 0.5), and (-0.5, -0.5). Furthermore, multiple temperature sensing junctions 102a are also arranged at (1, 0), (0, 1), (-1, 0), and (0, -1). Note that the unit of all these coordinates is cm.

[0065] In the collision energy measurement process according to the embodiment, first, the control unit 3 holds the first measurement unit 100 on the holding table 21 (see Figure 1) of the substrate cleaning device 1 (see Figure 1). For example, the first measurement unit 100 is held on the holding table 21 such that the reference point of the substrate 101 intersects with the central axis Ax (see Figure 2) in the extending direction of the nozzle 30 (see Figure 1).

[0066] Next, various parameters of the substrate cleaning apparatus 1 are set according to the ejection conditions of the gas cluster C for which collision energy measurement processing is desired. Then, the control unit 3 injects the gas cluster C toward the first measurement unit 100, causing the gas cluster C ejected from the nozzle 30 to collide with the first measurement unit 100. Furthermore, the control unit 3 measures the potential difference generated in the thermocouple 102 when the gas cluster C collides with the first measurement unit 100.

[0067] Figures 6 to 9 are diagrams illustrating the principle of the collision energy measurement process according to the embodiment. As described above, when the gas cluster C injected from the nozzle 30 collides with the first measuring unit 100, the gas cluster C also collides with the temperature sensing junction 102a of the thermocouple 102, as shown in Figure 6.

[0068] As a result, as shown in Figure 7, in the region R where the gas cluster C collides at the temperature sensing junction 102a, the collision energy of the gas cluster C is converted into thermal energy, causing the temperature of region R to rise locally.

[0069] As shown in Figure 8, a potential difference is generated around region R due to the Seebeck effect. Furthermore, as shown in Figure 9, heat diffuses from region R to the surroundings. Note that because the kinetic energy of the gas cluster C is very small, the temperature of the entire temperature sensing junction 102a hardly rises.

[0070] As explained above, there is a correlation between the collision energy of gas cluster C and the thermal energy generated in region R, and it is also presumed that there is a correlation between the thermal energy generated in region R and the potential difference generated around region R.

[0071] In other words, it is presumed that there is a correlation between the collision energy of gas cluster C and the potential difference generated around region R. Therefore, in this embodiment, the control unit 3 estimates the collision energy of gas cluster C based on the potential difference measured by thermocouple 102.

[0072] This allows for accurate measurement of the collision energy of gas cluster C. Therefore, according to this embodiment, the optimal parameters for the substrate cleaning process in the substrate cleaning apparatus 1 can be easily and accurately determined.

[0073] When the potential difference generated at thermocouple 102 upon collision of gas cluster C is converted into temperature, the temperature T1 measured at thermocouple 102 (hereinafter also referred to as the first temperature T1) is expressed by the following equation (1). T1 = T2 + T3 ... (1) T2: The temperature of the fluid itself that is ejected from the nozzle (hereinafter also referred to as the second temperature T2). T3: The temperature generated during the collision of gas clusters (hereinafter also referred to as the third temperature T3).

[0074] In other words, the first temperature T1 measured by the thermocouple 102 when the gas cluster C collides has a temperature component (second temperature T2) of the fluid itself ejected from the nozzle 30, in addition to a third temperature T3 which is correlated with the collision energy of the gas cluster C.

[0075] Therefore, in this embodiment, it is preferable to measure the second temperature T2 of the fluid itself being injected from the nozzle 30 using a second measuring unit 110 that is different from the first measuring unit 100. This makes it possible to exclude the second temperature T2 of the fluid itself being injected from the nozzle 30 from the first temperature T1 measured by the thermocouple 102 when the gas cluster C collides.

[0076] In other words, in this embodiment, it is possible to extract only the third temperature T3 generated during the collision of gas cluster C from the first temperature T1 measured by the thermocouple 102, thereby increasing the correlation between the temperature measured by the thermocouple 102 and the collision energy of gas cluster C.

[0077] Therefore, according to this embodiment, the collision energy of gas cluster C can be measured with even greater precision.

[0078] Figure 10 shows an example of the configuration of the second measuring unit 110 according to the embodiment. As shown in Figure 10, the second measuring unit 110 has a substrate 111 and a plurality of temperature sensors 112. The substrate 111 has a shape and size that is approximately the same as the wafer W (see Figure 1). This allows the second measuring unit 110 to be held comfortably by the holder 21.

[0079] The temperature sensor 112 measures the temperature at the location where it is placed. Multiple temperature sensors 112 are arranged concentrically on a disc-shaped substrate 111, for example.

[0080] The temperature sensor 112 is, for example, an electrical resistance thermometer, which utilizes the fact that the electrical resistance of an object changes with temperature, and determines the temperature by measuring the electrical resistance value. As a result, the second measuring unit 110 can measure only the second temperature T2 of the fluid itself that is ejected from the nozzle 30.

[0081] The temperature sensor 112 according to this embodiment is not limited to an electrical resistance thermometer, but may be a temperature sensor of another type. For example, the temperature sensor 112 may be a thermocouple whose surface is covered with a cover. In this case as well, the second measuring unit 110 can measure only the second temperature T2 of the fluid itself that is injected from the nozzle 30.

[0082] In the collision energy measurement process according to the embodiment, following the potential difference measurement process by the first measurement unit 100 (see Figure 4) described above, the control unit 3 (see Figure 1) holds the second measurement unit 110 on the holding stand 21 (see Figure 1) of the substrate cleaning device 1 (see Figure 1). For example, the second measurement unit 110 is held on the holding stand 21 such that the center of the substrate 111 intersects with the central axis Ax (see Figure 2) in the extending direction of the nozzle 30 (see Figure 1).

[0083] Next, the parameters of the substrate cleaning device 1 are set according to the ejection conditions of the gas cluster C (see Figure 2) that was injected into the first measuring unit 100 as described above. Then, the control unit 3 injects the gas cluster C toward the second measuring unit 110, causing the gas cluster C ejected from the nozzle 30 to collide with the second measuring unit 110.

[0084] Furthermore, the control unit 3 measures the temperature when the gas cluster C collides with the second measuring unit 110 using the temperature sensor 112. This allows the second temperature T2 of the fluid itself being ejected from the nozzle 30 to be determined.

[0085] Furthermore, the control unit 3 converts the potential difference generated at the thermocouple 102 when the gas cluster C collides into a first temperature T1. Then, the control unit 3 calculates a third temperature T3, which is the temperature generated at the time of the collision of the gas cluster C in the first measurement unit 100, from the following equation (2) obtained from equation (1) above. T3 = T1 - T2 ... (2)

[0086] Next, the control unit 3 estimates the collision energy of gas cluster C based on the calculated third temperature T3. This allows for more accurate measurement of the collision energy of gas cluster C.

[0087] Figure 11 shows an example of the measurement results for the first temperature T1 and the second temperature T2 according to the embodiment. As shown in Figure 11, even when the gas cluster C is injected under the same conditions, the first temperature T1 measured by the thermocouple 102 and the second temperature T2 measured by the temperature sensor 112 of the electrical resistance thermometer are significantly different in value.

[0088] In other words, in this embodiment, the third temperature T3 generated during the collision of gas clusters C can be measured as a significant value by using the thermocouple 102.

[0089] In this embodiment, as shown in Figures 4 and 5, the first measuring unit 100 may be provided with multiple thermocouples 102. This makes it possible to measure not only the collision energy of the gas cluster C flowing along the central axis Ax of the nozzle 30, but also the collision energy of multiple gas clusters C flowing around such gas cluster C.

[0090] Therefore, according to this embodiment, the collision energy distribution of the gas cluster C ejected from the nozzle 30 can be measured.

[0091] Furthermore, in this embodiment, as shown in Figure 10, it is preferable to provide a plurality of temperature sensors 112 in the second measuring unit 110. This makes it possible to measure the temperature distribution of the second temperature T2.

[0092] Therefore, according to this embodiment, since the temperature distribution of the third temperature T3 can be measured, the collision energy distribution of the gas cluster C injected from the nozzle 30 can be measured with high accuracy.

[0093] Furthermore, in this embodiment, the raw material for the gas cluster C injected from the nozzle 30 is preferably a mixed gas containing CO2 gas. By using a mixed gas containing CO2, which is relatively easy to aggregate in a free jet, as the raw material, the gas cluster C can be easily injected from the nozzle 30 onto the wafer W.

[0094] In this disclosure, the gas used as a raw material for gas cluster C is not limited to CO2 gas, but may also be, for example, Ar gas.

[0095] Furthermore, in this embodiment, the mixed gas containing CO2 is preferably injected from the nozzle 30 in an environment lower than atmospheric pressure. This cools the mixed gas containing CO2 to below its condensation temperature due to rapid adiabatic expansion, thereby enabling the efficient generation of gas clusters C.

[0096] In the embodiments described so far, an example has been shown in which the collision energy of gas clusters C is measured by preparing a first measuring unit 100 and a second measuring unit 110, which are fixtures for temperature measurement, separately from the substrate cleaning apparatus 1 and setting them inside the substrate cleaning apparatus 1, respectively. However, this disclosure is not limited to such an example.

[0097] For example, the first measuring unit 100 may be installed at the bottom of the dummy dispensing bath 50, and the potential difference generated by the thermocouple 102 may be measured while the dummy dispensing bath 50 receives the gas cluster C that is ejected from the nozzle 30 at the gas receiving position.

[0098] This allows for easy measurement of the potential difference generated at thermocouple 102 when gas cluster C collides, thereby enabling easy measurement of the collision energy of gas cluster C.

[0099] Alternatively, the second measuring unit 110 may be installed at the bottom of the dummy dispensing bath 50, and the temperature detected by the temperature sensor 112 may be measured while the dummy dispensing bath 50 receives the gas cluster C injected from the nozzle 30 at the gas receiving position. This makes it possible to easily measure the second temperature T2 of the fluid injected from the nozzle 30 itself.

[0100] The substrate processing apparatus (substrate cleaning apparatus 1) according to the embodiment comprises a substrate holding unit 20, a nozzle 30, and a control unit 3. The substrate holding unit 20 holds the substrate (wafer W). The nozzle 30 sprays a fluid (gas cluster C) onto the substrate (wafer W) held by the substrate holding unit 20. The control unit 3 controls each unit. The control unit 3 also performs the following processes: a process of impacting the fluid with a first measuring unit 100, a process of measuring the potential difference, a process of estimation, and a process of spraying the fluid (gas cluster C) onto the substrate (wafer W). The process of impacting the fluid with the first measuring unit 100 involves impacting the fluid (gas cluster C) sprayed from the nozzle 30 with the first measuring unit 100 which has a thermocouple 102. The process of measuring the potential difference measures the potential difference generated at the thermocouple 102 when the fluid (gas cluster C) impacts. The estimation process estimates the impact energy of the fluid (gas cluster C) based on the measured potential difference. The process of injecting a fluid (gas cluster C) onto the substrate (wafer W) involves injecting the fluid (gas cluster C) from the nozzle 30 onto the substrate (wafer W) based on the estimated collision energy of the fluid (gas cluster C). This allows for accurate measurement of the collision energy of the gas cluster C, enabling the wafer W to be cleaned using optimal parameters.

[0101] Furthermore, in the substrate processing apparatus (substrate cleaning apparatus 1) according to the embodiment, the control unit 3 further performs a process of causing the fluid (gas cluster C) to collide with a second measuring unit 110 and a process of measuring the temperature. The process of causing the fluid to collide with the second measuring unit 110 involves causing the fluid (gas cluster C) to collide with a second measuring unit 110 that is different from the first measuring unit 100. The process of measuring the temperature involves measuring the temperature at the time of the collision of the fluid (gas cluster C) with a temperature sensor 112 provided in the second measuring unit 110. This makes it possible to measure the collision energy of the gas cluster C with even greater accuracy.

[0102] Furthermore, in the substrate processing apparatus (substrate cleaning apparatus 1) according to the embodiment, the control unit 3 further performs the following processes: converting the potential difference into temperature, and calculating the third temperature T3 by subtracting the second temperature T2 measured by the temperature sensor 112 from the first temperature T1 converted from the potential difference. In addition, the estimation process estimates the collision energy of the fluid (gas cluster C) based on the third temperature T3. This makes it possible to measure the collision energy of the gas cluster C with even greater accuracy.

[0103] Furthermore, in the substrate processing apparatus (substrate cleaning apparatus 1) according to the embodiment, the process of spraying fluid (gas cluster C) onto the substrate (wafer W) involves spraying the fluid (gas cluster C) onto the surface on the substrate (wafer W) where the pattern Wa is formed. This suppresses the collapse of small protrusions, also known as pattern collapse.

[0104] Furthermore, in the substrate processing apparatus (substrate cleaning apparatus 1) according to the embodiment, the raw material for the fluid (gas cluster C) is a mixed gas containing carbon dioxide. This allows the gas cluster C to be easily sprayed onto the wafer W from the nozzle 30.

[0105] Furthermore, in the substrate processing apparatus (substrate cleaning apparatus 1) according to this embodiment, the mixed gas is injected from the nozzle 30 in an environment lower than atmospheric pressure. This allows gas clusters C to be easily injected from the nozzle 30 onto the wafer W.

[0106] Furthermore, in the substrate processing apparatus (substrate cleaning apparatus 1) according to the embodiment, multiple thermocouples 102 are installed in the first measurement unit 100. This makes it possible to measure the collision energy distribution of gas clusters C ejected from the nozzle 30.

[0107] Furthermore, the substrate processing apparatus (substrate cleaning apparatus 1) according to the embodiment further includes a dummy dispensing bath 50 that receives the fluid (gas cluster C) sprayed from the nozzle 30. The first measuring unit 100 is also provided in the dummy dispensing bath 50. This allows for easy measurement of the collision energy of the gas cluster C.

[0108] <Measurement Procedure> Next, the procedure for measuring the collision energy of gas cluster C according to the embodiment will be described with reference to Figures 12 and 13. Figure 12 is a flowchart showing an example of the procedure for measuring collision energy according to the embodiment.

[0109] In the measurement process according to this embodiment, first, the control unit 3 causes the gas cluster C injected from the nozzle 30 to collide with the first measuring unit 100 (step S101). Then, the control unit 3 measures the potential difference generated in the thermocouple 102 when the gas cluster C collides (step S102).

[0110] Finally, the control unit 3 estimates the collision energy of the gas cluster C based on the potential difference measured in step S102 (step S103), and terminates the series of measurement processes.

[0111] Figure 13 is a flowchart showing another example of the procedure for measuring collision energy according to the embodiment.

[0112] In another example of the measurement process, first, the control unit 3 causes the gas cluster C injected from the nozzle 30 to collide with the first measuring unit 100 (step S201). Then, the control unit 3 measures the potential difference generated at the thermocouple 102 when the gas cluster C collides (step S202).

[0113] Next, the control unit 3 converts the potential difference measured in step S202 into a first temperature T1 (step S203).

[0114] Next, the control unit 3 causes the gas cluster C ejected from the nozzle 30 to collide with the second measuring unit 110 (step S204). Then, the control unit 3 measures the temperature of the second measuring unit 110 (second temperature T2) at the time of the collision with the gas cluster C using the temperature sensor 112 (step S205).

[0115] Next, the control unit 3 calculates a third temperature T3 by subtracting the second temperature T2 obtained in step S205 from the first temperature T1 obtained in step 203 (step S206).

[0116] Finally, the control unit 3 estimates the collision energy of the gas cluster C based on the third temperature T3 calculated in step S206 (step S207), and terminates the series of measurement processes.

[0117] In the example shown in Figure 13, the potential difference is measured in the first measuring unit 100, and then the second temperature T2 is measured in the second measuring unit 110. However, the disclosure is not limited to this example, and the second temperature T2 may be measured in the second measuring unit 110, and then the potential difference may be measured in the first measuring unit 100.

[0118] The measurement method according to the embodiment includes a step of impacting the first measuring unit 100 (steps S101, S201), a step of measuring the potential difference (steps S102, S202), and a step of estimating the potential difference (steps S103, S207). The step of impacting the first measuring unit 100 (steps S101, S201) involves impacting the fluid (gas cluster C) injected from the nozzle 30 onto the first measuring unit 100 which has a thermocouple 102. The step of measuring the potential difference (steps S102, S202) measures the potential difference generated at the thermocouple 102 when the fluid (gas cluster C) impacts. The step of estimating the impact energy (steps S103, S207) estimates the impact energy of the fluid (gas cluster C) based on the measured potential difference. This makes it possible to accurately measure the impact energy of the gas cluster C.

[0119] Furthermore, the measurement method according to the embodiment further includes a step of causing the fluid (gas cluster C) to collide with a second measuring unit 110 (step S204) and a step of measuring the temperature (step S205). The step of causing the fluid (gas cluster C) to collide with a second measuring unit 110, which is different from the first measuring unit 100. The step of measuring the temperature (step S205) measures the temperature at the time of the collision of the fluid (gas cluster C) using a temperature sensor 112 provided on the second measuring unit 110. This makes it possible to measure the collision energy of the gas cluster C with even greater accuracy.

[0120] Furthermore, the measurement method according to the embodiment further includes a conversion step (step S203) and a calculation step (step S206). The conversion step (step S203) converts the potential difference into temperature. The calculation step (step S206) calculates a third temperature T3 by subtracting the second temperature T2 measured by the temperature sensor 112 from the first temperature T1 converted from the potential difference. The estimation step (step S207) estimates the collision energy of the fluid (gas cluster C) based on the third temperature T3. This makes it possible to measure the collision energy of the gas cluster C with even greater accuracy.

[0121] Furthermore, in the measurement method according to this embodiment, the raw material for the fluid (gas cluster C) is a mixed gas containing carbon dioxide. This allows the gas cluster C to be easily injected from the nozzle 30 onto the wafer W.

[0122] Furthermore, in the measurement method according to this embodiment, the mixed gas is injected from the nozzle 30 in an environment lower than atmospheric pressure. This allows gas clusters C to be easily injected from the nozzle 30 onto the wafer W.

[0123] Furthermore, in the measurement method according to the embodiment, multiple thermocouples 102 are installed in the first measurement unit 100. This makes it possible to measure the collision energy distribution of the gas cluster C ejected from the nozzle 30.

[0124] While embodiments of the present disclosure have been described above, the present disclosure is not limited to the above embodiments, and various modifications are possible without departing from its spirit. For example, the above embodiments describe an example of measuring the collision energy of gas clusters C injected from nozzle 30, but the present disclosure is not limited to such examples.

[0125] For example, the collision energy of a fluid other than gas cluster C may be measured using the technology of this disclosure. This also allows for accurate measurement of the collision energy of such a fluid.

[0126] The embodiments disclosed herein should be considered in all respects to be illustrative and not restrictive. Indeed, the embodiments described above can be embodied in a variety of forms. Furthermore, the embodiments described above may be omitted, replaced, or modified in various ways without departing from the scope and spirit of the appended claims. [Explanation of Symbols]

[0127] W wafer (an example of a substrate) 1. Substrate cleaning device (an example of a substrate processing device) 3. Control Unit 20 Board holding part 30 nozzles 50 Dummy Dispensing Baths 100 First measuring unit 102 Thermocouple 110 Second measuring section 112 Temperature Sensor C Gas cluster (an example of a fluid) T1 1st temperature T2 2nd temperature T3 3rd temperature

Claims

1. A step of causing a fluid injected from a nozzle to collide with a first measuring unit having a thermocouple, A step of measuring the potential difference generated in the thermocouple when the fluid collides, A step of estimating the collision energy of the fluid based on the measured potential difference, Measurement methods including

2. A step of causing the fluid to collide with a second measuring unit different from the first measuring unit, The step further includes measuring the temperature of the fluid at the time of impact using a temperature sensor provided in the second measuring unit. The measurement method according to claim 1.

3. A step of converting the aforementioned potential difference into temperature, A step of calculating a third temperature by subtracting the second temperature measured by the temperature sensor from the first temperature converted from the potential difference, Includes, The estimation step involves estimating the collision energy of the fluid based on the third temperature. The measurement method according to claim 2.

4. The raw material for the aforementioned fluid is a mixed gas containing carbon dioxide. The measurement method according to any one of claims 1 to 3.

5. The mixed gas is injected from the nozzle in an environment lower than atmospheric pressure. The measurement method according to claim 4.

6. Multiple thermocouples are installed in the first measuring unit. The measurement method according to any one of claims 1 to 3.

7. A substrate holding section that holds the substrate, A nozzle for spraying fluid onto the substrate held in the substrate holding portion, A control unit that controls each part, Equipped with, The control unit, The process involves causing the fluid ejected from the nozzle to collide with a first measuring unit having a thermocouple, A process for measuring the potential difference generated in the thermocouple when the fluid collides, A process for estimating the collision energy of the fluid based on the measured potential difference, Based on the estimated collision energy of the fluid, the process of injecting the fluid from the nozzle onto the substrate is performed. Circuit board processing equipment.

8. The control unit, A process of causing the fluid to collide with a second measuring unit different from the first measuring unit, The process of measuring the temperature of the fluid at the time of impact using a temperature sensor provided in the second measuring unit is further executed. The substrate processing apparatus according to claim 7.

9. The control unit, The process of converting the aforementioned potential difference into temperature, Further, the process of calculating a third temperature by subtracting the second temperature measured by the temperature sensor from the first temperature converted from the potential difference is performed. The estimation process described above estimates the collision energy of the fluid based on the third temperature. The substrate processing apparatus according to claim 8.

10. The process of injecting the fluid onto the substrate involves injecting the fluid onto the surface on the substrate where a pattern is formed. A substrate processing apparatus according to any one of claims 7 to 9.

11. The raw material for the aforementioned fluid is a mixed gas containing carbon dioxide. A substrate processing apparatus according to any one of claims 7 to 9.

12. The mixed gas is injected from the nozzle in an environment lower than atmospheric pressure. The substrate processing apparatus according to claim 11.

13. Multiple thermocouples are installed in the first measuring unit. A substrate processing apparatus according to any one of claims 7 to 9.

14. The system further comprises a dummy dispensing bath that receives the fluid ejected from the nozzle, The first measuring unit is provided in the dummy dispensing bath. A substrate processing apparatus according to any one of claims 7 to 9.

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