Proximity doping for silicon structures

WO2025038847A3 Publication Date: 2025-03-27RUTGERS THE STATE UNIV
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Patent Information

Application Number
PCT/US2024/042494
Authority / Receiving Office
WO · WO
Patent Type
Applications
Current Assignee / Owner
Priority Date
2023-08-15
Filing Date
2024-08-15
Publication Date
2025-03-27

AI Technical Summary

Technical Problem

Conventional doping methods for photovoltaic cells, such as LPCVD, APCVD, and PECVD, face challenges due to toxic and hazardous dopant precursors, high equipment costs, and the need for additional processing steps like masking and etching, which increase costs and complexity.

Method used

The proposed proximity doping method involves forming a multilayer structure with an oxide layer and amorphous silicon on a substrate, followed by the deposition of a spin-on-dopant on another substrate. The two structures are then stacked with the spin-on-dopant near the amorphous silicon, and heat is applied to transform the structure into a polysilicon doped structure, reducing the number of processing steps and equipment required.

Benefits of technology

This method reduces the number of equipment and processing steps needed, lowers costs by eliminating the need for hazardous precursors and additional removal steps, and achieves uniform doping and passivation, enhancing the efficiency and stability of photovoltaic cells.

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Abstract

Methods for fabricating a polysilicon doped structure include forming a first multilayer structure by growth / deposition of an oxide layer on a first substrate and disposing amorphous silicon on the oxide layer. The methods further include forming a second multilayer structure by disposing a spin-on-dopant on a second substrate. The methods further include creating a stack by placing the second multilayer structure on the first multilayer structure so that the spin-on-dopant is near the amorphous silicon. And the methods include applying heat to the stack to cause the first multilayer structure to transform into the polysilicon doped structure.
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