Pulsed current drive method, pulsed current drive structure, current-driven memory, storage device, and memory control circuit
WO2025057970A1 Publication Date: 2025-03-20SUMITOMO CHEM CO LTD +1
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Patent Information
- Application Number
- PCT/JP2024/032498
- Authority / Receiving Office
- WO · WO
- Patent Type
- Applications
- Current Assignee / Owner
- Priority Date
- 2023-09-13
- Filing Date
- 2024-09-11
- Publication Date
- 2025-03-20
AI Technical Summary
Technical Problem
In the prior art, dynamic random access memory (DRAM) and magnetoresistive variable random access memory (MRAM) face high power consumption problems when holding data, especially during refreshing or when generating magnetic fields.
Method used
The ferroelectrodeization caused by the arrangement of ions in different valence states is reversed by applying pulse currents parallel to the c-axis direction in electronic ferroelectric materials, thereby achieving a memory with low power consumption and high response speed.
Benefits of technology
It realizes the storage effect of low power consumption and high response speed, avoiding the high power consumption problem of traditional memory during refresh and magnetic field generation.
✦ Generated by Eureka AI based on patent content.
Abstract
A pulsed current drive method according to the present invention involves applying a pulsed current to invert ferroelectric polarization generated by the order and imbalance of ions that have different valences.
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