Reconfigurable heterojunction memristor, and regulation and control method therefor, preparation method therefor and use thereof

By introducing N-type and P-type oxide layers into heteromemators and realizing reconstruction between analog and digital types through electrochemical regulation methods, the problem of the existing heterojunction memristor failure to achieve the coexistence of multi-resistance characteristics is solved, and the multi-resistance characteristics coexistence and fast switching capabilities of heteromemators are realized, which is suitable for brain-like neuron computing and other applications.

WO2025060208A1 Publication Date: 2025-03-27HUAZHONG UNIV OF SCI & TECH
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Patent Information

Application Number
PCT/CN2023/130405
Authority / Receiving Office
WO · WO
Patent Type
Applications
Current Assignee / Owner
Priority Date
2023-09-22
Filing Date
2023-11-08
Publication Date
2025-03-27

AI Technical Summary

Technical Problem

The existing heterojunction memristors fail to achieve the coexistence of multi-resistance characteristics of analog and digital memristors, which limits their development in brain-like neuron calculations and threshold switches.

Method used

A reconfigurable heteromemator is designed to realize reconstruction between analog and digital by introducing N-type and P-type oxide layers into the heterojunction intermediate layer and electrochemical regulation method. The specific method includes acting as an analog type under a small bias voltage, applying a forward large bias voltage to convert it to a digital type, and applying a negative large bias voltage to convert it to an analog type again.

Benefits of technology

It realizes the coexistence of multi-resistive characteristics of heterogeneous memristors, has self-rectification characteristics and fast switching capabilities, is suitable for various forms of in-memory computing, and has broad application prospects.

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Abstract

The present invention belongs to the field of micro-nano electronic devices. Disclosed are a reconfigurable heterojunction memristor, and a regulation and control method therefor, a preparation method therefor and the use thereof. A functional layer designed in the present invention consists of a PN heterojunction of n-AgO and p-Ag2O or a PN heterojunction of n-CuO2 and p-CuO; when the heterojunction memristor is an analog memristor, the heterojunction memristor exhibits a multi-value resistance change performance on the basis of charge capture and release, and also exhibits a self-rectification characteristic without requiring a selector, thereby facilitating large-scale integration; and when the heterojunction memristor is a digital memristor, due to the presence of Ag / Cu ions in a layer, the formation of Ag / Cu conductive wires is facilitated, and the conversion threshold voltage is relatively low, thereby achieving the advantages of the switching speed being high and the switching power consumption being low. In the present invention, a PN heterojunction device for an N-type oxide layer and a P-type oxide layer implements analog-digital reconfigurability between a self-rectification analog device and a digital device by means of electrochemical principles; and the heterojunction device has a simple structure, is suitable for various forms of in-memory computing, and has wide application prospects.
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