Optical device

Abstract

The present invention provides an optical device having, on an Si substrate, a semiconductor layer formed from a gallium oxide-based material. This optical device comprises: a substrate (10) formed from an Si single crystal; a semiconductor layer (16) (an n-type layer (11), an active layer (12), and a p-type layer (13)) that is provided in contact with the substrate (10) and is formed from a uniaxially oriented gallium oxide-based semiconductor; a semiconductor layer (16); and two electrodes (a positive electrode (14) and a negative electrode (15)). The semiconductor layer (16) includes a light-emitting element structure having an n-type region (an n-type layer (11)) and a p-type region (a p-type layer (13)), or a second semiconductor layer formed from a gallium oxide-based semiconductor provided on a semiconductor layer, and two electrodes. The second semiconductor layer has a light-emitting element structure having an n-type region and a p-type region.