Chipset for electric field energy transfer

Abstract

Resonating module chipset for electric field energy transfer, comprising at least one of a component adapted for providing a capacitance and a component adapted for providing an inductance. The chipset implements at least partially a resonating module. Optionally, the chipset comprises at least one electric field electrode connected to the resonating module. In a configuration, the chipset is adapted for converting an electric potential of an electric field into electrical energy, the electric field electrode(s) being charged by the electric potential. In another configuration, the chipset is adapted for generating an electric field, the electric field electrode(s) generating the electric field. In another configuration, the chipset is adapted for providing at least one of variable capacitance and variable inductance. Optionally, the chipset comprises a control module for adjusting the at least one of variable capacitance and variable inductance to adjust a resonating frequency of the resonating module chipset.

Description

CHIPSET FOR ELECTRIC FIELD ENERGY TRANSFERTECHNICAL FIELD

[0001] The present disclosure relates to electric field energy transfer.BACKGROUND

[0002] Wireless power transfer of electrical energy is based on the capability of transferring electrical energy wirelessly, i.e. without establishing a physical connection between a source and a destination of the power transfer. Wireless power transfer avoids the use of an electrically conductive connector (e.g. a cable, an electric power outlet or a Universal Serial Bus (USB) cable).

[0003] Various techniques of wireless power transfer have been proposed, and the only successful implementations have concentrated to date on inductive power transfer for small electronic devices. The inductive power is transferred by a transmitter, and collected at a receiver; the transmitter and receiver comprising a plurality of components, including at least one electrically conductive plate.

[0004] Inductive power transfer comes with several drawbacks, including heat generation, low power transfer, and a very short distance between the receiver and the inductive power transmitter.

[0005] Another power transfer technique relies on electric field coupling systems, which use electrically conductive plates for implementing the wireless power transfer functionality. The wireless power transfer functionality is effectuated by generating an electric field for coupling the conductive plates.

[0006] Some manufacturers attempted a different approach of wireless power transfer: capacitive power transfer. Capacitive power transfer significantly reduces heat generation, and transfers more power over greater distances. But many issues still remain to be resolved when it comes to implementation of capacitivepower transfer, including the design and integration of components used in a transmitter and a receiver.

[0007] There is therefore a need for a chipset for electric field energy transfer.SUMMARY

[0008] According to a first aspect, the present disclosure provides a resonating module chipset for electric field energy transfer. The resonating module chipset comprises at least one of a component adapted for providing a capacitance and a component adapted for providing an inductance.

[0009] In a particular aspect, the resonating module chipset further comprises at least one electric field electrode electrically connected to a resonating module comprising the at least one of the component adapted for providing a capacitance and the component adapted for providing an inductance.

[0010] In another particular aspect, the chipset is adapted for converting an electric potential of an electric field into electrical energy. The at least one electric field electrode is charged by the electric potential of the electric field. In a particular embodiment, the resonating module chipset further comprises a component adapted for receiving electrical energy in Alternating Current (AC) form from the resonating module and supplying electrical energy in Direct Current (DC) form.

[0011] In still another particular aspect, the chipset is adapted for generating an electric field. The at least one electric field electrode is generating the electric field. In a particular embodiment, the resonating module chipset further comprises a power module connected to the resonating module. The power module is adapted for supplying electrical energy in Alternating Current (AC) form to the resonating module.

[0012] In yet another particular aspect, the resonating module chipset comprises one or more active electrodes or a combination of at least one active electrode and at least one passive electrode.

[0013] In another particular aspect, the chipset is adapted for providing at least one of variable capacitance and variable inductance.

[0014] In still another particular aspect, the chipset comprises at least one of the following: a microelectromechanical system (MEMS) adapted for providing at least one of variable capacitance and variable inductance, and a component adapted for providing a variable impedance. The variable impedance comprises at least one of a variable capacitance and a variable inductance.

[0015] In yet another particular aspect, the resonating module chipset further comprises a control module adapted for adjusting a value of the at least one of variable capacitance and variable inductance to adjust a resonating frequency of the resonating module chipset. In a particular embodiment, the resonating module chipset further comprises at least one electric field electrode charged by an electric potential of an electric field. The resonating frequency of the resonating module chipset is substantially equal to a resonating frequency of the electric field. In another particular embodiment, the resonating module chipset further comprises at least one electric field electrode generating an electric field having a resonating frequency substantially equal to the resonating frequency of the resonating module chipset.

[0016] According to a second aspect, the present disclosure provides a chipset for converting an electric potential of an electric field into electrical energy. The chipset comprises a resonating module comprising at least one of a component adapted for providing a capacitance and a component adapted for providing an inductance. The chipset comprises at least one electric field electrode electrically connected to the resonating module. The at least one electric field electrode is charged by the electric potential of the electric field. The chipset comprises a component adapted for receiving electrical energy in Alternating Current (AC) form from the resonating module and supplying electrical energy in Direct Current (DC) form.

[0017] In a particular aspect, the chipset comprises one or more active electrodesor a combination of at least one active electrode and at least one passive electrode.

[0018] In another particular aspect, the resonating module is a variable resonating module adapted for providing at least one of variable capacitance and variable inductance.

[0019] In still another particular aspect, the variable resonating module comprises at least one of the following: a microelectromechanical system (MEMS) adapted for providing at least one of variable capacitance and variable inductance, and a component adapted for providing a variable impedance. The variable impedance comprises at least one of a variable capacitance and a variable inductance.

[0020] In yet another particular aspect, the chipset further comprises a control module adapted for adjusting a value of the at least one of variable capacitance and variable inductance. A resonating frequency of the resonating module is substantially equal to a resonating frequency of the electric field.

[0021] According to a third aspect, the present disclosure provides a chipset for generating an electric field. The chipset comprises a resonating module comprising at least one of a component adapted for providing a capacitance and a component adapted for providing an inductance. The chipset comprises at least one electric field electrode electrically connected to the resonating module. The at least one electric field electrode is charged by the electric potential of the electric field. The at least one electric field electrode is generating the electric field.

[0022] In a particular aspect, the chipset further comprises a power module connected to the resonating module. The power module is adapted for supplying electrical energy in Alternating Current (AC) form to the resonating module.

[0023] In another particular aspect, the chipset comprises one or more active electrodes or a combination of at least one active electrode and at least one passive electrode.

[0024] In still another particular aspect, the resonating module is a variableresonating module adapted for providing at least one of variable capacitance and variable inductance.

[0025] In yet another particular aspect, the variable resonating module comprises at least one of the following: a microelectromechanical system (MEMS) adapted for providing at least one of variable capacitance and variable inductance, and a component adapted for providing a variable impedance. The variable impedance comprises at least one of a variable capacitance and a variable inductance.

[0026] In another particular aspect, the chipset further comprises a tuning module adapted for adjusting a value of the at least one of variable capacitance and variable inductance. A resonating frequency of the electric field is substantially equal to a resonating frequency of the resonating module.BRIEF DESCRIPTION OF THE DRAWINGS

[0027] Embodiments of the disclosure will be described by way of example only with reference to the accompanying drawings, in which:

[0028] Figure 1 is a schematic representation illustrating the concepts of electric field generation and electric field potential conversion via an Electric Field Generator (EFG) comprising a generating cell and an Electric Field Potential Converter (EFPC) comprising a converting cell;

[0029] Figures 2-3 are schematic representations of different implementations of the converting cell comprising a pair of electric field electrodes and a resonating module;

[0030] Figure 4 is a schematic representation of an implementation of the converting cell using a chipset for integrating some of the components of the converting cell;

[0031] Figure 5 is a schematic representation of an implementation of the EFPC comprising a pair of converting cells;

[0032] Figures 6-8 are schematic representations of different implementations ofthe EFG with the generating cell comprising a pair of electric field electrodes and a resonating module;

[0033] Figure 9 is a schematic representation of an implementation of the generating cell using a chipset for integrating some of the components of the generating cell;

[0034] Figure 10 is a schematic representation of an implementation of the EFG comprising a pair of generating cells; and

[0035] Figure 11 is a schematic representation of a generic chipset for electric field power transfer.DETAILED DESCRIPTION

[0036] The foregoing and other features will become more apparent upon reading of the following non-restrictive description of illustrative embodiments thereof, given by way of example only with reference to the accompanying drawings. Like numerals represent features on the various drawings.

[0037] Various aspects of the present disclosure generally address one or more of the problems related to the wireless transfer of electrical energy. More specifically, the present disclosure aims at integrating components of a receiver of electrical energy (using electric field potential conversion) and components of a transmitter of electrical energy (using electric field generation) into a chipset.

[0038] Throughout the present specification, the following expressions are used as follows.

[0039] Electric field electrode: conductive material used to generate an electric field or convert an electric field. The conductive material may be continuous or a structure of conductive material interspersed with non-conductive material. Throughout the present specification, the expression electric field electrode is meant to refer to any shape (2D or 3D) and not solely to a polygon. The electric field electrode being actively used in an Electrical Field Generator or an ElectricalField Potential Converter.

[0040] Conductive material: material with a high conductivity rating, i.e. low electrical resistivity. Examples of conductive materials include copper, iron, gold, aluminum, silver and alloys, super conductive materials or materials made thereof or doped herewith.

[0041] Dielectric layer: a substrate with low electric polarizability. Examples of dielectric layers include a substrate made or polyethylene material or other compounds of similar chemical composition, epoxy or other compounds of similar chemical composition; substrates comprising vacuum areas, air gaps, and / or gaps filled with polyethylene material or epoxy or other compounds of similar chemical composition, and glass-reinforced epoxy laminate material.

[0042] Electric device: any type of electrically powered apparatus, tool or device, including for example electronic equipment (wireless phones, tablets, computers, headphones, earbuds, keyboards, screens, gamepads, cameras, lights, etc.), tools (power tools, appliances, small appliances, fans, lights, lighting system etc.), medical devices, specialized devices and apparatuses, etc.

[0043] Electric Field Generator (EFG): apparatus which uses a conductive material for generating an electric field when driven by a source of electric power. For instance, one or more electric field electrodes of the EFG are driven by the source of electric power and generate the electric field.

[0044] Electric Field Potential Converter (EFPC): apparatus which uses a conductive material for converting electric potential of an electric field into electrical energy. For instance, electric field electrode(s) of the EFPC are charged by the electric potential of the electric field to generate the electrical energy.

[0045] Chipset: an assembly of electronic and / or electrical components which can be for example integrated on a board, into a module or provided as a unit. The chipset generally has a small form factor.

[0046] Resonating module: a subset of components comprising at least onecomponent adapted for providing an inductance (e.g. an inductor) and at least one component adapted for providing a capacitance (e.g. a capacitor). The resonating frequency of the resonating module depends on the values of the inductance(s) and capacitance(s).

[0047] Variable inductance: inductance with a variable inductive value. The variable inductance is provided by a variable inductor, a matrix of inductors adapted to create a range of inductive values, etc.

[0048] Variable capacitance: capacitance with a variable capacitive value. The variable capacitance is provided by a variable capacitor, a matrix of capacitors adapted to create a range of capacitive values, etc.

[0049] Fixed resonating module: resonating module providing only fixed inductance and fixed capacitance.

[0050] Variable resonating module: resonating module providing at least one of a variable inductance and a variable capacitance.

[0051] Capacitive coupling between an Electric Field Generator (EFG) and an Electric Field Potential Converter (EFPC) allows transfer of wireless electrical energy therebetween. Although the dielectric properties of space between the EFG and the EFPC cannot be controlled, the electrical properties of the EFG (generating the electric field) and the electrical properties of the EFPC (converting the electric potential of the electric field into energy) must be carefully selected and their assembly conceptualized I manufactured to optimize the efficient transfer of electrical energy therebetween. The EFG and the EFPC may operate in resonant capacitive coupling, or in capacitive coupling when resonant capacitive coupling cannot be achieved. In addition to electrical energy transfer, the integration of the EFPC to daily used electric devices could greatly improve their operation and convenience.

[0052] Reference is made to Figure 1, which is a schematic representation illustrating the concepts of electric field generation and electric field potentialconversion. An Electric Field Generator (EFG) 300 is connected to a source of electric power, and generates therefrom an electric field. The electric field propagates in the air between the EFG 300 and an Electric Field Potential Converter (EFPC) 100. The EFPC 100 converts an electric potential of the electric field into electrical energy. The electrical energy may be used to recharge a battery, to electrify an electric device, a combination of both, etc.

[0053] In operation, the EFG 300 generates the electric field and the EFPC 100 couples with the electric field generated by the EFG 300. More specifically, one or more electric field electrodes of a generating cell 400 of the EFG 300 (which will be described later in relation to Figure 13) generate the electric field. One or more electric field electrodes of a converting cell 200 of the EFPC 200 (which will be described later in relation to Figure 2) couple with the generated electric field. The generating cell 400 further comprises electric I electronic components and I or materials (which will also be described later in relation to Figure 13) for generating the electric field. The converting cell 200 further comprises electric I electronic components and I or materials (which will also be described later in relation to Figure 2) for converting the electric potential of the electric field into electrical energy. The converting cell 200 is further adapted for maintaining the EFPC 100 in resonant mode.

[0054] The present invention aims at providing different implementations of the EFPC 100 and EFG 300 with a chipset adapted to implement one or more functionalities of respectively the EFPC 100 and the EFG 300. Some of the benefits of providing an implementation with a chipset include: cost reduction, standardization, form factor reduction, additional control and monitoring capabilities, etc.

[0055] Reference is now made concurrently to Figures 1 and 2, where Figure 2 is a schematic representation of components of the converting cell 200 of the EFPC 100. The EFPC 100 comprises at least one converting cell 200. In the following, only one converting cell 200 is shown and discussed, but the present EFPC 100 isnot limited to such an implementation. The implementations, mechanisms and interactions described herein for one converting cell 200 are applicable to several converting cells 200.

[0056] The converting cell 200 includes at least one electric field electrode. In the following, the converting cell 200 will be described with a pair of electric field electrodes 210 and 210’ (two active electrodes, or one active and one passive electrode). However, the converting cell 200 may include only one electric field electrode (active) or more than two electric field electrodes (with at least one active electrode). A person skilled in the art will readily adapt the implementation of the converting cell 200 to any number of electric field electrode(s).

[0057] The electric field electrodes 210 and 210’ are charged by the electric potential of the electric field (not shown) surrounding at least a portion of each electric field electrode 210 and 210’. Each electric field electrode (210 and 210’) cannot be charged by an electric potential of an electric field that is not surrounding a portion of the respective electric field electrode. The charging of the electric field electrodes 210 and 210’ by the electric potential of the electric field generates the electrical energy supplied by the EFPC 100. The converting cell 200 converts the electric potential of the electric field into the electrical energy.

[0058] Furthermore, any composition or configuration of electric field electrodes 210 and 210’ could be used. Those compositions include without limitation: metallic electric field electrodes or metal alloy electric field electrodes, electric field electrodes made of super conductive materials, etc. The configurations of electric field electrodes 210 and 210’ include without limitation: solid electric field electrodes, electric field electrodes defining apertures, mesh-like electric field electrodes, or any other configuration of electric field electrodes 210 and 210’ suitable for being charged by the electric potential of the electric field.

[0059] The converting cell 200 further includes the resonating module 220 for maintaining the EFPC 100 in resonant mode. The electric field electrodes 210 and210’ are respectively electrically connected to the resonating module 220. In its most generic form, the resonating module 220 comprises at least one component adapted for providing a capacitance and at least one component adapted for providing an inductance.

[0060] Various implementations of the resonating module 220 will be described in the following paragraphs and are illustrated in the Figures. These implementations are for illustration purposes only. Any implementation that is compliant with the previously mentioned generic form of the resonating module 220 is within the scope of the present disclosure. As mentioned previously, one implementation of the resonating module 220 is a variable resonating module and another implementation is a fixed resonating module.

[0061] Figure 2 represents an exemplary implementation of the resonating module 220 being variable, with a variable capacitor 222 electrically connected to the electric field electrodes 210 and 210’ (a first terminal of the variable capacitor 222 is electrically connected to the electric field electrodes 210 and a second terminal of the variable capacitor 222 is electrically connected to the electric field electrodes 210’).

[0062] In the exemplary implementation illustrated in Figure 2, the resonating module 220 comprises two inductors 224 and 224’ (e.g. two coils). Each one of the inductors 224 and 224’ may have a variable or fixed inductance.

[0063] The inductor 224 is electrically connected via one of its terminals to the electric field electrodes 210 and to the first terminal of the variable capacitor 222. The inductor 224’ is electrically connected via one of its terminals to the electric field electrodes 210’ and to the second terminal of the variable capacitor 222.

[0064] The variable capacitor 222 has an impedance matching functionality, to match conditions of other components of the converting cell 200 (and optionally to also match conditions of the electric field between the EFG 300 and the EFPC 100 and / or to match conditions of components of the EFG 300).

[0065] Figure 2 represents the resonating module 220 further comprising a controller 226. The controller 226 is present only if the resonating module 220 is a variable resonating module.

[0066] In the exemplary configuration illustrated in Figure 2, the controller 226 is in charge of adjusting the capacitance of the variable capacitor 222. If several variable capacitors are included in the resonating module 220, the controller 226 is adapted for adjusting the capacitance of each variable capacitor.

[0067] If the resonating module 220 comprises variable inductors (e.g. 224 and I or 224’), the controller 226 is also in charge of adjusting the inductance of the variable inductor(s).

[0068] Several implementations of the controller 226 are within the scope of the present disclosure. The controller 226 may be integrated to the resonating module 220 (as illustrated in Figure 2) or external to the resonating module 220 (not represented in the Figures for simplification purposes). Although the controller 226 is represented as a single component in Figure 2, the controller 226 may be implemented by several components operating independently or in coordination for adjusting the operating parameters (e.g. capacitance and I or inductance) of the entities under their respective control.

[0069] In an exemplary implementation, the controller 226 implements a stand-alone control functionally based on the operating conditions of the resonating module 220 (for adjusting the operating parameters (e.g. capacitance and I or inductance) of the entities under its control). Alternatively or complementarity, the control functionally implemented by the controller 226 is remotely controlled (e.g. the controller 226 is wirelessly controlled through a remote device sending wireless commands for adjusting the operating parameters (e.g. capacitance and I or inductance) of the entities under its control).

[0070] Alternative configurations of the resonating module 220, in terms of capacitive and inductive components, are within the scope of the presentdisclosure. For instance, in addition to the variable capacitor 222, at least one additional capacitor (variable of fixed) is used in the resonating module 220. For example, one or more capacitor(s) (variable or fixed) are used in series with the variable capacitor 222. In another example, one or more capacitor(s) (variable or fixed) are used in parallel with the variable capacitor 222. In still another example, a combination of capacitor(s) (variable or fixed) are used in series and in parallel with the variable capacitor 222.

[0071] Similarly, additional inductors (variable or fixed) may also be used in series and I or in parallel with at least one of the inductors 224 and 224’.

[0072] Furthermore, a matrix of capacitors providing a range of capacitance values and / or a matrix of inductors providing a range of inductive values may also be used for implementing the resonating module 220.

[0073] In still another exemplary implementation, a combination of a first inductor (not represented in Figure 2) and a second inductor (e.g. 224) is used, where the controller 226 controls whether electric power is supplied to the first inductor. When electric power is supplied to the first inductor, the inductance of the second inductor (e.g. 224) is modified by the first inductor. The inductance of the first inductor is lower than the inductance of the second inductor (for example, respectively 0.1 microhenry and 1 microhenri).

[0074] The converting cell 200 further comprises a rectifier 240 (also referred to in the art as an Alternating Current / Direct Current (AC / DC) converter). The rectifier 240 (or any equivalent circuit or group of discrete components) converts electrical energy received in AC form into DC form. In an exemplary configuration, the rectifier 240 is implemented by a diode bridge comprising four diodes (as is well known in the art). Alternatively, the rectifier 240 is included in the EFPC 100, but not directly integrated to the converting cell 200. In the case (not represented in the Figures) where a single electric field electrode (e.g. 200) is used, a half diode bridge is used. Instead of a diode bridge, the rectifier 240 may include any otherequivalent circuit or group of discrete components adapted for implementing the rectifier functionality. Another exemplary implementation of the rectifier 240 is an Active Variable Reactance (AVR) rectifier. More generally, any component adapted for receiving electrical energy in AC form from the resonating module 220 and supplying electrical energy in DC form may be used in place of the rectifier 240.

[0075] The EFPC 100 further comprises a voltage regulator 110. The voltage regulator 110 is generally independent from the converting cell 200, but may also be integrated to the converting cell 200.

[0076] The inductors 224 and 224’ are electrically connected via their respective other terminals to the rectifier 240. The voltage regulator 110 is electrically connected to the rectifier 240. The rectifier 240 receives electrical energy in AC form from the resonating module 220 and supplies electrical energy in DC form to the voltage regulator 110.

[0077] The voltage regulator 110 is adapted to convert the DC voltage received from the rectifier 240 with a voltage value VIN (e.g. 15 Volts), into an output DC voltage with a voltage value VOIIT (e.g. 5 Volts). The voltage regulator 110 is well known in the art. The ratio between VIN and VOIIT can be statically or dynamically controlled. Dynamic control is performed via additional components not represented in Figure 2 for simplification purposes. For example, the voltage regulator 110 is wirelessly controlled through a remote device sending wireless commands for adjusting the ratio between VIN and VOIIT.

[0078] The output DC voltage is supplied to a load not represented in Figures 1 and 2 for simplification purposes. The load may be partially or integrally part of the converting cell 200, partially or integrally part of the EFPC 100, external to the EFPC 100, etc. Examples of load include (without limitations) a battery, an electric device, an electrical and I or electronic circuit, etc.

[0079] Figure 2 illustrates a configuration where electric power is provided to components of the resonating module 220 via the DC voltage (VIN) outputted bythe rectifier 240 or via the DC voltage (VOIIT) outputted by the voltage regulator 110. Alternatively or complementarily, another source of electric power (not represented in Figure 2 for simplification purposes) is used for powering (at least temporarily) components of the resonating module 220

[0080] The resonating module 220 can be seen as a black box providing the resonating functionality to the electric field electrodes 210 and 210’. As mentioned previously, more or less than two electric field electrodes may be electrically connected to the resonating module 220. The resonating module 220 has one input electrical connection for each electric field electrode. The resonating module 220 has two output electrical connections for connecting to the rectifier 240.

[0081] The EFPC 100 generally further comprises a casing. In an exemplary configuration, a surface of the casing contains the pair of electric field electrodes 210 and 210’. The converting cell 200 may further be provided with electrical protections to prevent electrical surges. The electric field electrodes 210 and 210’ may be embedded or partially embedded in a dielectric layer. For example, the dielectric layer forms the casing of the EFPC 100.

[0082] Although not represented in the Figures for simplification purposes, another implementation of the resonating module 220 is a fixed resonating module. In this case, referring to the configuration illustrated in Figure 2, the capacitor 222 has a fixed capacitance and the inductors 224 and 224’ have a fixed inductance. Furthermore, the controller 226 is not present.

[0083] The configuration illustrated in Figure 2 is applicable to both electric field electrodes 210 and 210’ being active. If electrode 210 is active and electrode 210’ is passive, the inductor 224’ is not present.

[0084] Reference is now made concurrently to Figures 2 and 3, where Figure 3 represents an implementation of the resonating module 220 with microelectromechanical system (MEMS). The MEMS technology is well known in the art and will not be described in detail.

[0085] Figure 3 represents the variable capacitor 222 being implemented by a variable capacitance MEMS. More generally, at least one of the variable capacitor(s) (e.g. 222) included in the resonating module 220 may be implemented by a variable capacitance MEMS.

[0086] A variable capacitance MEMS is a particular type of MEMS adapted to provide a variable capacitance. In an exemplary implementation, the MEMS comprises a fixed plate and a moveable plate (parallel to each other), a movement of the moveable plate with respect to the fixed plate modifying the capacitance provided by the MEMS. Movement of the moveable plate is performed via a mini-motor and I or gear(s) internal to the MEMS, a servo motor, etc.

[0087] Figure 3 also represents the inductors 224 and 224’ being implemented by a variable inductance MEMS. More generally, at least one of the inductor(s) (e.g. 224 and 224’) included in the resonating module 220 may be implemented by a variable capacitance MEMS.

[0088] A variable inductance MEMS is a particular type of MEMS adapted to provide a variable inductance. In an exemplary implementation, a planar spiral inductor fabricated on a substrate, with a movable MEMS membrane or actuator, adjusts the inductance by altering the effective magnetic field or coil geometry.

[0089] The controller 226 is in charge of adjusting the value of the capacitance of the variable capacitance MEMS(s) (e.g. 222) and adjusting the value of the inductance of the variable inductance MEMS(s) (e.g. 224 and 224’).

[0090] As mentioned previously, a single controller 226 is in charge of controlling all the MEMSs included in the resonating module 220. Alternatively, the controller 226 is implemented by several components operating independently or in coordination for adjusting the operating parameters (capacitance or inductance) of respective MEMSs included in the resonating module 220.

[0091] In the case of a variable capacitance MEMS, control of the variable capacitance is achieved by controlling the distance between the fixed andmoveable plates of the MEMS. The following exemplary control methods can be used for this purpose (other methods may be used as well). Performing an electrostatic actuation, by applying an electrostatic force resulting in a high voltage that rotates the gear controlling the distance between the fixed and moveable plates of the MEMS. Performing an electromagnetic actuation, by applying a small magnetic field that rotates the gear controlling the distance between the fixed and moveable plates of the MEMS. Performing a piezoelectric actuation, by applying a localized and controlled electric field that expands or contracts the moveable plate of the MEMS. Performing a thermic actuation, using dilation to bring the moveable plate closer or further apart from the fixed plate of the MEMS.

[0092] Optionally, a single MEMS capable of simultaneously providing a variable capacitance and a variable inductance is used in the resonating module 220. For example, the functionalities of a variable capacitor (e.g. 222) and a variable inductor (e.g. 224 and I or 224’) are integrated into a single MEMS.

[0093] In another exemplary configuration not represented in the Figures, the resonating module 220 comprises components adapted for providing a variable or fixed impedance.

[0094] For example, the variable capacitor 222 is implemented by a component providing a variable impedance, the variable impedance comprising a variable capacitance. More generally, at least one of the variable capacitor(s) (e.g. 222) included in the resonating module 220 may be implemented by a component providing a variable impedance, the variable impedance comprising a variable capacitance. Similarly, a capacitor used in the resonating module 220 for providing a fixed capacitance can be implemented by a component providing a fixed impedance, the fixed impedance comprising a fixed capacitance.

[0095] Alternatively or complementarity, the inductors 224 and 224’ are implemented by a component providing an impedance (fixed or variable), the impedance comprising an inductance (fixed or variable). More generally, at leastone of the inductor(s) (e.g. 224 and 224’) included in the resonating module 220 may be implemented by a component providing an impedance (fixed or variable), the impedance comprising an inductance (fixed or variable).

[0096] The controller 226 is in charge of adjusting the value of the impedance of the component(s) providing a variable impedance (e.g. 222, and optionally 224 and 224’).

[0097] Optionally, a single component (e.g. a MEMS) capable of providing a variable impedance comprising a variable capacitance and an inductance (variable or fixed) is used in the resonating module 220 for implementing the functionalities of several components (e.g. the variable capacitor 222 and at least one of the (variable of fixed) inductors 224 and 224’).

[0098] Reference is now made concurrently to Figures 2, 3 and 4, where Figure 4 represents at least some of the components of the resonating module 220 being integrated to a chipset 500.

[0099] For simplification purposes, Figure 4 represents the entire resonating module 220 being integrated to the chipset 500. However, the chipset 500 comprises at least one of the components of the resonating module 220, but not necessarily all of the components of the resonating module 220.

[0100] In an exemplary configuration, the chipset 500 comprises the at least one component of the resonating module 220 adapted for providing the capacitance (e.g. variable capacitor 222 of Figure 2, variable capacitance MEMS 222 of Figure 4, etc.).

[0101] In another alternative or complementary configuration, the chipset 500 comprises the at least one component of the resonating module 220 adapted for providing the impedance (e.g. inductors 224 and 224’ of Figures 3 (providing a variable of fixed inductance), variable inductance MEMS 224 and 224’ of Figure 3, etc.).

[0102] In still another alternative or complementary configuration, the chipset500 also comprises the controller 226 of Figures 2-3.

[0103] Figure 4 illustrates a configuration where electric power is provided to the chipset 500 via the DC voltage (VIN) outputted by the rectifier 240 or via the DC voltage (VOIIT) outputted by the voltage regulator 110. Alternatively or complementarily, another source of electric power (not represented in Figure 4 for simplification purposes) is used for powering (at least temporarily) the chipset 500.

[0104] In another exemplary configuration (not represented in the Figures for simplification purposes), the electric field electrodes 210 and 210’ are also integrated to the chipset 500 (in addition to the resonating module 220). More generally, if the converting cell 200 comprises N electric field electrode(s), the N electrode(s) are integrated to the chipset 500. Alternatively, only some of the N electrode(s) are integrated to the chipset 500.

[0105] In still another exemplary configuration (not represented in the Figures for simplification purposes), the rectifier 240 is also integrated to the chipset 500 (in addition to the resonating module 220). Furthermore, both the rectifier 240 and the electric field electrodes 210 and 210’ may be simultaneously integrated to the chipset 500.

[0106] A person skilled in the art will readily understand that other combinations of components belonging to the converting cell 200 or more generally to the EFPC 100 (illustrated in Figure 1 ) may be integrated to the chipset 500.

[0107] Furthermore, the present EFPC 100 could equally support several converting cells 200; one, two or more electric field electrodes 210 per converting cell 200; etc.

[0108] For instance, reference is now made to Figure 5, where Figure 5 represents the EFPC 100 comprising two converting cells 200 and 200’ and a single voltage regulator 110. The voltage regulator 110 receives the DC voltage VIN from the two converting cells 200 and 200’ operating in parallel (to increase the electric power supplied to the voltage regulator 110).

[0109] Any configurations and implementations of the components of the converting cell 200 described previously in relation to Figures 2-4 are applicable to the converting cells 200 and 200’ illustrated in Figure 5.

[0110] Figure 5 illustrates an exemplary configuration where at least one of the converting cells 200 and 200’ comprises a chipset 500 integrating at least some of the components of the converting cell. Any configurations and implementations of the chipset 500 described previously in relation to Figure 4 are applicable to the chipset 500 illustrated in Figure 5.

[0111] For example, each converting cell 200 and 200’ comprises a chipset 500. This use case is applicable to converting cells 200 and 200’ both implementing a low power electrical energy transfer from the EFG 300 to the EFPC 100. In another example, only the converting cell 200 comprises a chipset 500. This use case is applicable to the converting cell 200 implementing a low power electrical energy transfer from the EFG 300 to the EFPC 100 while the converting cell 200’ implements a high power electrical energy transfer from the EFG 300 to the EFPC 100. In this case, the chipset 500 integrated to the low power converting cell 200 can be used to control operations of the high power converting cell 200’.

[0112] In another exemplary configuration (not represented in the Figures for simplification purposes), a single chipset 500 is used for both converting cells 200 and 200’. In this case, some of the components of the converting cells 200 and 200’ are integrated to the chipset 500.

[0113] The implementation of the EFPC 100 illustrated in Figure 5 can be easily adapted by a person skilled in the art, to a configuration with more than two converting cells integrated to the EFPC 100.

[0114] Reference is now made concurrently to Figures 1 and 6, where Figure 6 is a schematic representation of components of the EFG 300 and generating cell 400. The EFG 300 comprises at least one generating cell 400. In the following, only one generating cell 400 is shown and discussed, but the presentEFG 300 is not limited to such an implementation. The implementations, mechanisms and interactions described herein for one generating cell 400 are applicable to several generating cells 400.

[0115] The generating cell 400 includes at least one electric field electrode. In the following, the generating cell 400 will be described with a pair of electric field electrodes 410 and 410’ (two active electrodes, or one active and one passive electrode). However, the generating cell 400 may include only one electric field electrode (active) or more than two electric field electrodes (with at least one active electrode). A person skilled in the art will readily adapt the implementation of the generating cell 400 to any number of electric field electrode(s).

[0116] The electric field electrodes 410 and 410’ are driven by a power module 430 through a resonating module 420, to generate the electric field (not shown). The generated electric field extends beyond the electric field electrodes 410 and 410’, and generally the EFG 300. The generated electric field may be shaped as a semi-circular dome, or a flattened dome, or any other electric field shape known in the prior art and industry.

[0117] Furthermore, any composition or configuration of electric field electrodes 410 and 410’ could be used. Those compositions include without limitation: metallic electric field electrodes or metal alloy electric field electrodes, electric field electrodes made of super conductive materials, etc. The configurations of electric field electrodes 410 and 410’ include without limitation: solid electric field electrodes, electric field electrodes defining apertures, mesh-like electric field electrodes, or any other configuration of electric field electrodes 410 and 410’ suitable for generating the electric field.

[0118] The generating cell 400 further includes the resonating module 420 for generating a resonant electric field. The electric field electrodes 410 and 410’ are respectively electrically connected to the resonating module 420. In its most generic form, the resonating module 420 comprises at least one componentadapted for providing a capacitance and at least one component adapted for providing an inductance.

[0119] The present EFG 300 may operate in several modes of operation, including a resonant mode, a non-resonant mode, a hybrid mode where the EFG 300 alternates between the resonant mode and the non-resonant mode, etc.

[0120] Various implementations of the resonating module 420 will be described in the following paragraphs and are illustrated in the Figures. These implementations are for illustration purposes only. Any implementation that is compliant with the previously mentioned generic form of the resonating module 420 is within the scope of the present disclosure. As mentioned previously, one implementation of the resonating module 420 is a variable resonating module and another implementation is a fixed resonating module.

[0121] The generating cell 400 further includes a tuning module 440, which will be described in the following paragraphs. Alternatively, the tuning module 440 is not integrated to the generating cell 400.

[0122] The electric field electrodes 410 and 410’, and the resonating module 420 form by themselves a fixed generating cell 400, and when combined to the tuning module 440 form a variable generating cell. In its most simplest representation, the resonating module 420 defines a capacitance value and an inductance value, which may enter in oscillation and thereby resonate. The tuning module 440 adjusts a resonating frequency of the generating cell 400 by changing an overall generating cell capacitance value, changing an overall generating cell inductance value, changing an overall generating cell capacitance value and inductance value, and / or changing one of a resonating module 420 capacitance value and / or inductance value.

[0123] In an exemplary embodiment of tuning module, the tuning module 440 is adapted for modifying at least one of a variable capacitance and / or a variable inductance for tuning a frequency of operation of the resonating module420 to generate a resonant electric field by the electric field electrodes 410 and 410’ when electrically coupled with one EFPC 200. Those skilled in the art will understand that the tuning module 440 could rely on different components than a variable capacitance and / or a variable inductance for tuning although not shown or discussed herein.

[0124] The EFG 300 further comprises the aforementioned power module 430. The power module 430 supplies electrical energy in AC form to the resonating module 420. For example, the power module 430 comprises an AC power supply connected to an AC power source. Alternatively or complementarily, the power module 430 comprises a Direct Current (DC) power supply and an inverter for converting electrical energy in DC form into electrical energy in AC form. Other components of the EFG 300 are also supplied with electrical energy by the power module 430, such as the tuning module 440 and a control module 450. The electric field electrodes 410 and 410’ are powered through the resonating module 420.

[0125] The control module 450 is in charge of controlling operations of the EFG 300 overall, as well as operating condition(s) of the generating cell 400. For example, the control module 450 controls operations of the tuning module 440, controls the electrical energy supplied by the power module 430, etc.

[0126] Reference is now made concurrently to Figures 6 and 7, where Figure 7 represents an exemplary implementation of the resonating module 420 being variable. The resonating module 420 comprises a variable capacitor 422 and two inductors 424 and 424’ (e.g. two coils). Each one of the inductors 424 and 424’ may have a variable or fixed inductance.

[0127] The variable capacitor 422 is electrically connected to the power module 430 and to the inductors 424 and 424’ (e.g. a first terminal of the variable capacitor 222 is electrically connected to the power module 430 and to the inductor 424, a second terminal of the variable capacitor 222 is electrically connected to the power module 430 and to the inductor 424’).

[0128] The inductor 424 is electrically connected via one of its terminals to the electric field electrodes 410 and to the first terminal of the variable capacitor 422. The inductor 424’ is electrically connected via one of its terminals to the electric field electrodes 410’ and to the second terminal of the variable capacitor 422.

[0129] The resonating module 420 can be seen as a black box providing the resonating functionality to the electric field electrodes 410 and 410’. As mentioned previously, more or less than two electric field electrodes may be electrically connected to the resonating module 420. The resonating module 420 has one output electrical connection for each electric field electrode. The resonating module 420 has (at least) two input electrical connections for connecting to the power module 430.

[0130] Alternative configurations of the resonating module 420, in terms of capacitive and inductive components, are within the scope of the present disclosure. For instance, in addition to the variable capacitor 422, at least one additional capacitor (variable of fixed) is used in the resonating module 420. For example, one or more capacitor(s) (variable or fixed) are used in series with the variable capacitor 422. In another example, one or more capacitor(s) (variable or fixed) are used in parallel with the variable capacitor 422. In still another example, a combination of capacitor(s) (variable or fixed) are used in series and in parallel with the variable capacitor 422.

[0131] Similarly, additional inductors (variable or fixed) may also be used in series and I or in parallel with at least one of the inductors 424 and 424’.

[0132] Furthermore, a matrix of capacitors providing a range of capacitance values and / or a matrix of inductors providing a range of inductive values may also be used for implementing the resonating module 420.

[0133] In still another exemplary implementation, a combination of a first inductor (not represented in Figure 7) and a second inductor (e.g. 424) is used,where the tuning module 440 controls whether electric power is supplied to the first inductor. When electric power is supplied to the first inductor, the inductance of the second inductor (e.g. 424) is modified by the first inductor. The inductance of the first inductor is lower than the inductance of the second inductor (for example, respectively 0.1 microhenry and 1 microhenri).

[0134] The EFG 300 generally further comprises a casing. In an exemplary configuration, a surface of the casing contains the electric field electrodes 410 and 410’. The generating cell 400 may further be provided with electrical protections to prevent electrical surges. The electric field electrodes 410 and 410’ may be embedded or partially embedded in a dielectric layer. For example, the dielectric layer forms the casing of the EFG 300.

[0135] Although not represented in the Figures for simplification purposes, another implementation of the resonating module 420 is a fixed resonating module. In this case, referring to the configuration illustrated in Figure 14, the capacitor 422 has a fixed capacitance and the inductors 424 and 424’ have a fixed inductance.

[0136] The configuration illustrated in Figure 7 is applicable to both electric field electrodes 410 and 410’ being active. If electrode 410 is active and electrode 410’ is passive, the inductor 424’ is not present.

[0137] The tuning module 440 is in charge of adjusting the capacitance of the variable capacitor 422. If several variable capacitors are included in the resonating module 420, the tuning module 440 is adapted for adjusting the capacitance of each variable capacitor.

[0138] If the resonating module 420 comprises variable inductors (e.g. 424 and I or 424’), the tuning module 440 is also in charge of adjusting the inductance of the variable inductor(s).

[0139] Several implementations of the tuning module 440 are within the scope of the present disclosure. The tuning module 440 may be external to the resonating module 420 (as illustrated in Figure 7) or integrated to the resonatingmodule 420. Although the tuning module 440 is represented as a single component in Figure 7, the tuning module 440 may be implemented by several components operating independently or in coordination for adjusting the operating parameters (e.g. capacitance and I or inductance) of the entities under their respective control.

[0140] In an exemplary implementation, the tuning module 440 implements a stand-alone control functionally based on the operating conditions of the resonating module 420 (for adjusting the operating parameters (e.g. capacitance and I or inductance) of the entities under its control). Alternatively or complementarity, the tuning functionally implemented by the tuning module 440 is controlled by the control module 450. Alternatively or complementarity, the tuning functionally implemented by the tuning module 440 is remotely controlled (e.g. the tuning module 440 is wirelessly controlled through a remote device sending wireless commands for adjusting the operating parameters (e.g. capacitance and I or inductance) of the entities under its control).

[0141] Although not represented in Figure 7 for simplification purposes, the tuning module 440 is powered via the power module 430. Alternatively or complementarily, the tuning module 440 is powered via another source of power (not represented in Figure 7).

[0142] Reference is now made concurrently to Figures 6, 7 and 8, where Figure 8 represents an implementation of the resonating module 420 with microelectromechanical system (MEMS).

[0143] Figure 8 represents the variable capacitor 422 being implemented by a variable capacitance MEMS. More generally, at least one of the variable capacitor(s) (e.g. 422) included in the resonating module 420 may be implemented by a variable capacitance MEMS. As mentioned previously, a variable capacitance MEMS is a particular type of MEMS adapted to provide a variable capacitance.

[0144] Figure 8 also represents the inductors 424 and 424’ being implemented by a variable inductance MEMS. More generally, at least one of theinductor(s) (e.g. 424 and 424’) included in the resonating module 420 may be implemented by a variable capacitance MEMS. As mentioned previously, a variable inductance MEMS is a particular type of MEMS adapted to provide a variable inductance.

[0145] The tuning module 440 is in charge of adjusting the value of the capacitance of the variable capacitance MEMS(s) (e.g. 422) and adjusting the value of the inductance of the variable inductance MEMS(s) (e.g. 424 and 424’).

[0146] The tuning module 440 is in charge of controlling all the MEMSs included in the resonating module 420. Alternatively, the tuning module 440 is implemented by several components operating independently or in coordination for adjusting the operating parameters (capacitance or inductance) of respective MEMSs included in the resonating module 420.

[0147] Optionally, a single MEMS capable of simultaneously providing a variable capacitance and a variable inductance is used in the resonating module 420. For example, the functionalities of a variable capacitor (e.g. 222) and a variable inductor (e.g. 424 and I or 424’) are integrated into a single MEMS.

[0148] In another exemplary configuration not represented in the Figures, the resonating module 420 comprises components adapted for providing a variable or fixed impedance.

[0149] For example, the variable capacitor 222 is implemented by a component providing a variable impedance, the variable impedance comprising a variable capacitance. More generally, at least one of the variable capacitor(s) (e.g. 222) included in the resonating module 420 may be implemented by a component providing a variable impedance, the variable impedance comprising a variable capacitance. Similarly, a capacitor used in the resonating module 420 for providing a fixed capacitance can be implemented by a component providing a fixed impedance, the fixed impedance comprising a fixed capacitance.

[0150] Alternatively or complementarity, the inductors 224 and 224’ areimplemented by a component providing an impedance (fixed or variable), the impedance comprising an inductance (fixed or variable). More generally, at least one of the inductor(s) (e.g. 224 and 224’) included in the resonating module 420 may be implemented by a component providing an impedance (fixed or variable), the impedance comprising an inductance (fixed or variable).

[0151] The tuning module 440 is in charge of adjusting the value of the impedance of the component(s) providing a variable impedance (e.g. 422, and optionally 424 and 424’).

[0152] Optionally, a single component (e.g. a MEMS) capable of providing a variable impedance comprising a variable capacitance and an inductance (variable or fixed) is used in the resonating module 420 for implementing the functionalities of several components (e.g. the variable capacitor 422 and at least one of the (variable of fixed) inductors 424 and 424’).

[0153] Reference is now made concurrently to Figures 6, 7, 8 and 9, where Figure 9 represents at least some of the components of the resonating module 420 being integrated to a chipset 700.

[0154] For simplification purposes, Figure 9 represents the entire resonating module 420 being integrated to the chipset 700. More generally, the chipset 700 comprises at least one of the components of the resonating module 420, but not necessarily all of the components of the resonating module 420.

[0155] In an exemplary configuration, the chipset 700 comprises the at least one component of the resonating module 420 adapted for providing the capacitance (e.g. variable capacitor 422 of Figures 6 and 7, variable capacitance MEMS 422 of Figure 8, etc.).

[0156] In another alternative or complementary configuration, the chipset 700 comprises the at least one component of the resonating module 420 adapted for providing the impedance (e.g. inductors 424 and 424’ of Figures 6-7 (providing a variable of fixed inductance), variable inductance MEMS 424 and 424’ of Figure8, etc.).

[0157] Power is provided to the chipset 700 via the power module 430. Alternatively or complementarily, another source of power (not represented in Figure 9 for simplification purposes) is used for powering the chipset 700.

[0158] In another exemplary configuration (not represented in the Figures for simplification purposes), the electric field electrodes 410 and 410’ are also integrated to the chipset 700 (in addition to the resonating module 420). More generally, if the generating cell 400 comprises N electric field electrode(s), the N electrode(s) are integrated to the chipset 700. Alternatively, only some of the N electrode(s) are integrated to the chipset 700.

[0159] In still another exemplary configuration (not represented in the Figures for simplification purposes), at least one of the components of the tuning module 440 is also integrated to the chipset 700 (in addition to the resonating module 420). Thus, the chipset 700 may or may not include all of the components of the tuning module 440, based on a particular implementation. Furthermore, component(s) of the tuning module 440 and the electric field electrodes 410 and 410’ may be simultaneously integrated to the chipset 700.

[0160] A person skilled in the art will readily understand that other combinations of components belonging to the generating cell 400 or more generally to the EFG 300 (illustrated in Figure 6) may be integrated to the chipset 700 (e.g. at least some of the components of the power module 430 and I or at least some of the components of the control module 450).

[0161] Furthermore, the present EFG 300 could equally support several generating cells 400; one, two or more electric field electrodes 410 per generating cell 400; etc.

[0162] For instance, reference is now made to Figure 10, where Figure 10 represents the EFG 300 comprising two generating cells 400 and 400’. For instance, the two generating cells 400 and 400’ operate simultaneously, to increasethe wirelessly transferred power, to operate at different transmission ranges, etc.

[0163] Any configurations and implementations of the components of the generating cell 400 described previously in relation to Figures 6-9 are applicable to the generating cells 400 and 400’ illustrated in Figure 10.

[0164] Figure 10 illustrates an exemplary configuration where at least one of the generating cells 400 and 400’ comprises a chipset 700 integrating at least some of the components of the generating cell. Any configurations and implementations of the chipset 700 described previously in relation to Figure 9 are applicable to the chipset 700 illustrated in Figure 10.

[0165] For example, each generating cell 400 and 400’ comprises a chipset 700. This use case is applicable to generating cells 400 and 400’ both implementing a low power electrical energy transfer from the EFG 300 to the EFPC 100. In another example, only the generating cell 400 comprises a chipset 700. This use case is applicable to the generating cell 400 implementing a low power electrical energy transfer from the EFG 300 to the EFPC 100 while the generating cell 400’ implements a high power electrical energy transfer from the EFG 300 to the EFPC 100. In this case, the chipset 700 integrated to the low power generating cell 400 can be used to control operations of the high power generating cell 400’.

[0166] In another exemplary configuration (not represented in the Figures for simplification purposes), a single chipset 700 is used for both generating cells 400 and 400’. In this case, some of the components of the generating cells 400 and 400’ are integrated to the chipset 700.

[0167] The implementation of the EFG 300 illustrated in Figure 10 can be easily adapted by a person skilled in the art, to a configuration with more than two generating cells integrated to the EFG 300.

[0168] Reference is now made concurrently to Figures 4, 9 and 11, where Figure 11 represents a generic chipset 800 for electric field power transfer, comprising one or more components of a resonating module and one or moreelectric field electrodes. The generic chipset 800 can serve as a basis for implementing the chipset 500 (for the receiver side of the power transfer) in a configuration where the chipset 500 comprises at least one of the components of the resonating module 220 and at least one of the electric field electrodes 210 and 210’. The generic chipset 800 can also serve as a basis for implementing the chipset 700 (for the transmitter side of the power transfer) in a configuration where the chipset 700 comprises at least one of the components of the resonating module 420 and at least one of the electric field electrodes 410 and 410’. Although not represented in Figure 11 , a minimal configuration of the generic chipset 800 only comprises one or more components of the resonating module.

[0169] In the present specification and Figures, some of the components or modules are illustrated and described as being part or embedded into a larger component or module, but such components or modules could alternatively be standalone components or modules, or implemented differently without departing from the scope of the present invention.

[0170] Other types of Electric Field Generation technologies could further be contemplated and adapted based on the teachings of the present specification, such technologies including magneto dynamic coupling, microwaves and light waves.

[0171] Although the present disclosure has been described hereinabove by way of non-restrictive, illustrative embodiments thereof, these embodiments may be modified at will within the scope of the appended claims without departing from the spirit and nature of the present disclosure.

Claims

WHAT IS CLAIMED IS:1 . A resonating module chipset for electric field energy transfer, the resonating module chipset comprising: at least one of: a component adapted for providing a capacitance; and a component adapted for providing an inductance.

2. The resonating module chipset of claim 1 , further comprising at least one electric field electrode electrically connected to a resonating module comprising the at least one of the component adapted for providing a capacitance and the component adapted for providing an inductance.

3. The resonating module chipset of claim 2, wherein the chipset is adapted for converting an electric potential of an electric field into electrical energy, the at least one electric field electrode being charged by the electric potential of the electric field.

4. The resonating module chipset of claim 3, further comprising a component adapted for receiving electrical energy in Alternating Current (AC) form from the resonating module and supplying electrical energy in Direct Current (DC) form.

5. The resonating module chipset of claim 2, wherein the chipset is adapted for generating an electric field, the at least one electric field electrode generating the electric field.

6. The resonating module chipset of claim 5, further comprising a power module connected to the resonating module, the power module being adapted for supplying electrical energy in Alternating Current (AC) form to the resonating module.

7. The resonating module chipset of claim 2, comprising one or more active electrodes or a combination of at least one active electrode and at least one passive electrode.

8. The resonating module chipset of claim 1 , wherein the chipset is adapted for providing at least one of variable capacitance and variable inductance.

9. The resonating module chipset of claim 8, wherein the chipset comprises at least one of the following: a microelectromechanical system (MEMS) adapted for providing at least one of variable capacitance and variable inductance, and a component adapted for providing a variable impedance, the variable impedance comprising at least one of a variable capacitance and a variable inductance.

10. The resonating module chipset of claim 8, further comprising a control module adapted for adjusting a value of the at least one of variable capacitance and variable inductance to adjust a resonating frequency of the resonating module chipset.

11. The resonating module chipset of claim 10, further comprising at least one electric field electrode charged by an electric potential of an electric field, the resonating frequency of the resonating module chipset being substantially equal to a resonating frequency of the electric field.

12. The resonating module chipset of claim 10, further comprising at least one electric field electrode generating an electric field having a resonating frequency substantially equal to the resonating frequency of the resonating module chipset.

13. A chipset for converting an electric potential of an electric field into electrical energy, the chipset comprising: a resonating module comprising at least one of: a component adapted for providing a capacitance, anda component adapted for providing an inductance; at least one electric field electrode electrically connected to the resonating module, the at least one electric field electrode being charged by the electric potential of the electric field; and a component adapted for receiving electrical energy in Alternating Current (AC) form from the resonating module and supplying electrical energy in Direct Current (DC) form.

14. The chipset of claim 13, comprising one or more active electrodes or a combination of at least one active electrode and at least one passive electrode.

15. The chipset of claim 13, wherein the resonating module is a variable resonating module adapted for providing at least one of variable capacitance and variable inductance.

16. The chipset of claim 15, wherein the variable resonating module comprises at least one of the following: a microelectromechanical system (MEMS) adapted for providing at least one of variable capacitance and variable inductance, and a component adapted for providing a variable impedance, the variable impedance comprising at least one of a variable capacitance and a variable inductance.

17. The chipset of claim 15, further comprising a control module adapted for adjusting a value of the at least one of variable capacitance and variable inductance, a resonating frequency of the resonating module being substantially equal to a resonating frequency of the electric field.

18. A chipset for generating an electric field, the chipset comprising: a resonating module comprising at least one of: a component adapted for providing a capacitance, and a component adapted for providing an inductance; andat least one electric field electrode electrically connected to the resonating module, the at least one electric field electrode being charged by the electric potential of the electric field, the at least one electric field electrode generating the electric field.

19. The chipset of claim 18, further comprising a power module connected to the resonating module, the power module being adapted for supplying electrical energy in Alternating Current (AC) form to the resonating module.

20. The chipset of claim 18, comprising one or more active electrodes or a combination of at least one active electrode and at least one passive electrode.

21. The chipset of claim 18, wherein the resonating module is a variable resonating module adapted for providing at least one of variable capacitance and variable inductance.

22. The chipset of claim 21 , wherein the variable resonating module comprises at least one of the following: a microelectromechanical system (MEMS) adapted for providing at least one of variable capacitance and variable inductance, and a component adapted for providing a variable impedance, the variable impedance comprising at least one of a variable capacitance and a variable inductance.

23. The chipset of claim 21 , further comprising a tuning module adapted for adjusting a value of the at least one of variable capacitance and variable inductance, a resonating frequency of the electric field being substantially equal to a resonating frequency of the resonating module.

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