Resistor mask, plating apparatus, and plating method

Abstract

The present invention appropriately shields a non-pattern area according to a chip arrangement pattern on a substrate.　This resistor mask is disposed between an anode and a substrate in a plating apparatus, and is used for a resistor having a cross-shaped pattern area formed by two overlapping rectangles. The resistor mask comprises: first to fourth mask pieces provided in correspondence with the respective corners of one of the two rectangles; and fifth and sixth mask pieces provided for a pair of projection portions extending outward from two sides opposing each other in said one of the rectangles.

Description

Resistive mask, plating apparatus, plating method 【0001】 This application relates to a resistive mask for masking a resistor used in a plating apparatus, a plating apparatus, and a plating method. 【0002】 In recent years, the chip size may increase, such as for chips for AI. When the size of the chips (quadrilateral) on a circular wafer becomes large, the mounting of the chips decreases due to the influence of the arc portion of the wafer, and the chip arrangement becomes a shape (cross shape) or a quadrilateral in which two types of quadrilaterals overlap. In such a wafer, the electric field tends to concentrate at the boundary between the area without chips, i.e., the non-pattern area, and the chips (especially at the corners of the chips). When plating the wafer, it may adversely affect the plating quality, such as the in-plane uniformity of the plating film on the wafer. 【0003】 Japanese Patent Application Laid-Open No. 2022-59561, Patent No. 7014553 【0004】 As one solution to the above problem, the inventor of the present application has found that it is effective to shield the non-pattern area on the chip from the electric field. Electric field shielding members for shielding the electric field in a plating apparatus are described in, for example, Japanese Patent Application Laid-Open No. 2022-59561 (Patent Document 1) and Patent No. 7014553 (Patent Document 2). Patent Document 1 describes an example of an electromagnetic shielding plate disposed below or above a porous resistor in a plating bath. Patent Document 2 describes an example of an anode mask disposed near the anode and shielding a part of the electric field flowing from the anode to the substrate. 【0005】 In electromagnetic shielding masks according to the prior art, including Patent Documents Ⅰ and Ⅱ, the shielding region of the electric field shielding member is configured according to the outer shape of the substrate such as a wafer. Therefore, it does not shield the non-pattern area according to the chip arrangement pattern on the wafer. Also, when the outer contour of the chip arrangement pattern has irregularities like a cross shape and such irregularities affect the plating quality, it is desirable to appropriately shield the non-pattern area with an electric field shielding member. 【0006】The present invention aims to solve at least some of the problems described above. One object of the present invention is to appropriately shield non-patterned areas according to the arrangement pattern of chips on a substrate. Another object of the present invention is to adjust the exposure area of ​​the patterned area of ​​a resistor according to the arrangement pattern of chips and / or non-patterned areas on a substrate. 【0007】 According to one aspect of the present invention, a resistor mask is provided for use in a resistor that is placed between a substrate and an anode in a plating apparatus and has a cross-shaped pattern area formed by two overlapping rectangles, comprising: first to fourth mask pieces provided corresponding to each corner of one of the two rectangles; and fifth and sixth mask pieces provided for each of a pair of protruding portions extending outward from each of the two opposing sides of the one rectangle. 【0008】 This is a perspective view showing the overall configuration of a plating apparatus according to one embodiment. This is a plan view showing the overall configuration of a plating apparatus according to one embodiment. This is a schematic diagram of a plating module according to one embodiment. This is a plan view of a resistor according to one embodiment. This is a plan view illustrating the shape of the pattern area of ​​the resistor of a resistor mask according to one embodiment. This is an example of a shielding pattern by a resistor mask. This is an example of a shielding pattern by a resistor mask. This is an example of a shielding pattern by a resistor mask. This is a perspective view of a resistor according to one embodiment. This is a plan view showing an example of the arrangement of each mask piece of the resistor mask. This is a perspective view showing an example of the arrangement of each mask piece of the resistor mask. This is a cross-sectional view of the resistor and resistor mask along the line X-X in Figure 9. This is a perspective view of the resistor and resistor mask in a state where they have been cut along the line X-X in Figure 9. This is a perspective view of the resistor and resistor mask from a different angle where they have been cut along the line X-X in Figure 9. This is a cross-sectional view of the resistor and resistor mask along the line XI-XI in Figure 9. This is a perspective view showing another example of the arrangement of each mask piece of the resistor mask. This is a schematic diagram showing an example of the configuration of a resistor mask drive mechanism. 【0009】Hereinafter, a plating apparatus 1000 according to an embodiment of the present invention will be described with reference to the drawings. Note that the drawings are schematic illustrations to facilitate understanding of the characteristics of the objects, and the dimensional ratios of each component may not be the same as those of the actual objects. 【0010】 Figure 1 is a perspective view showing the overall configuration of the plating apparatus 1000 of this embodiment. Figure 2 is a plan view showing the overall configuration of the plating apparatus 1000 of this embodiment. As shown in Figures 1 and 2, the plating apparatus 1000 includes a load port 100, a transport robot 110, an aligner 120, a pre-wet module 200, a pre-soak module 300, a plating module 400, a cleaning module 500, a spin rinse dryer 600, a transport device 700, and a control module 800. 【0011】 The load port 100 is a module for loading wafers (substrates) contained in cassettes such as FOUPs (not shown) into the plating apparatus 1000, and for unloading substrates from the plating apparatus 1000 into cassettes. In this embodiment, four load ports 100 are arranged horizontally, but the number and arrangement of load ports 100 are arbitrary. The transport robot 110 is a robot for transporting substrates and is configured to transfer substrates between the load port 100, the aligner 120, the pre-wet module 200, and the spin rinse dryer 600. When transferring substrates between the transport robot 110 and the transport device 700, the substrates can be transferred via a temporary storage stand (not shown). 【0012】The aligner 120 is a module for aligning the positions of orientation flats, notches, etc., on the substrate in a predetermined direction. In this embodiment, two aligners 120 are arranged side by side horizontally, but the number and arrangement of the aligners 120 are arbitrary. The pre-wet module 200 replaces the air inside the patterns formed on the substrate surface with a treatment solution by wetting the surface of the substrate to be plated with a treatment solution such as pure water or degassed water before the plating process. The pre-wet module 200 is configured to perform a pre-wetting process that makes it easier to supply the plating solution inside the patterns by replacing the treatment solution inside the patterns with the plating solution during plating. In this embodiment, two pre-wet modules 200 are arranged side by side vertically, but the number and arrangement of the pre-wet modules 200 are arbitrary. 【0013】 The pre-soak module 300 is configured to perform a pre-soak treatment, which involves etching away an oxide film with high electrical resistance present on the surface of a seed layer formed on the surface of a substrate to be plated before plating, using a treatment solution such as sulfuric acid or hydrochloric acid, thereby cleaning or activating the surface of the substrate. In this embodiment, two pre-soak modules 300 are arranged side by side in the vertical direction, but the number and arrangement of the pre-soak modules 300 are arbitrary. The plating module 400 performs the plating treatment on the substrate. In this embodiment, there are two sets of 12 plating modules 400, arranged in a vertical direction of three modules and horizontal direction of four modules, for a total of 24 plating modules 400, but the number and arrangement of the plating modules 400 are arbitrary. 【0014】The cleaning module 500 is configured to clean the substrate to remove any remaining plating solution after the plating process. In this embodiment, two cleaning modules 500 are arranged side by side in the vertical direction, but the number and arrangement of the cleaning modules 500 are arbitrary. The spin rinse dryer 600 is a module for drying the substrate after the cleaning process by rotating it at high speed. In this embodiment, two spin rinse dryers 600 are arranged side by side in the vertical direction, but the number and arrangement of the spin rinse dryers 600 are arbitrary. The transport device 700 is a device for transporting substrates between multiple modules in the plating apparatus 1000. The control module 800 is configured to control multiple modules of the plating apparatus 1000 and can consist of, for example, a general-purpose computer or a dedicated computer with an input / output interface with an operator. 【0015】 An example of a series of plating processes performed by the plating apparatus 1000 will be described. First, substrates contained in cassettes are loaded into the load port 100. Next, the transport robot 110 removes the substrates from the cassettes in the load port 100 and transports them to the aligner 120. The aligner 120 aligns the orientation flats, notches, and other positions of the substrates to a predetermined direction. The transport robot 110 then transfers the substrates, whose orientation has been aligned by the aligner 120, to the pre-wet module 200. 【0016】 The pre-wetting module 200 performs a pre-wetting treatment on the substrate. The transport device 700 transports the pre-wetting substrate to the pre-soak module 300. The pre-soak module 300 performs a pre-soak treatment on the substrate. The transport device 700 transports the pre-soaked substrate to the plating module 400. The plating module 400 performs a plating treatment on the substrate. 【0017】The transport device 700 transports the plated substrate to the cleaning module 500. The cleaning module 500 cleans the substrate. The transport device 700 then transports the cleaned substrate to the spin rinse dryer 600. The spin rinse dryer 600 dries the substrate. The transport robot 110 receives the substrate from the spin rinse dryer 600 and transports the dried substrate to the cassette in the load port 100. Finally, the cassette containing the substrate is discharged from the load port 100. 【0018】 The configuration of the plating apparatus 1000 described in Figures 1 and 2 is merely an example, and the configuration of the plating apparatus 1000 is not limited to the configurations shown in Figures 1 and 2. 【0019】 The control module 800 may have a configuration comprising a memory (not shown) that stores various setting data such as machine parameters and various programs, and a CPU (not shown) that executes the programs in the memory. The control module 800 may also be equipped with an input / output interface that includes an output device such as a display, and an input device such as a keyboard or mouse. The storage medium constituting the memory may include any volatile storage medium and / or any non-volatile storage medium. The storage medium may include one or more of any storage mediums such as ROM, RAM, hard disk, CD-ROM, DVD-ROM, and flexible disk. Some or all of the functions of the control module 800 may be configured with hardware such as an ASIC. Some or all of the functions of the control module 800 may also be configured with a PLC, sequencer, etc. Some or all of the control module 800 may be located inside and / or outside the housing of the plating apparatus 1000. Some or all of the control module 800 is connected to each part of the plating apparatus so as to be able to communicate with it by wired and / or wireless means. 【0020】 [Plating Module] Next, the plating module 400 will be described. Since the multiple plating modules 400 in the plating apparatus 1000 according to this embodiment have similar configurations, only one plating module 400 will be described. 【0021】Figure 3 is a schematic diagram of a plating module according to one embodiment. The plating apparatus 1000 (plating module 400) according to this embodiment is a type of plating apparatus (plating module) called a face-down type, cup type, horizontal type, etc., which holds the substrate Wf horizontally and performs plating, as shown in Figure 3. Here, we will explain using the case where the substrate Wf is a circular wafer as an example. 【0022】 The plating module 400 according to this embodiment mainly comprises a plating tank 401, a substrate holder 403, also called a plating head, which holds a substrate Wf, a drive mechanism 411 including a rotation mechanism, a tilting mechanism, and a lifting mechanism for rotating, tilting, and raising / lowering the substrate holder 403, and an anode 410 positioned below the substrate Wf and facing the substrate Wf. An overflow tank 408 is provided outside the plating tank 401 to receive the plating solution that overflows from the plating tank 401. A diaphragm (not shown) may be provided to divide the inside of the plating tank 401 into a cathode chamber and an anode chamber. The tilting mechanism may be omitted. 【0023】 In the plating module 400 according to this embodiment, the anode 410 and the substrate Wf (cathode) are electrically connected to the power supply 409. For example, the substrate Wf is electrically connected to the low-potential side of the power supply 409, and the anode 410 is connected to the high-potential side of the power supply 409. The power supply 409 may be a DC power supply, a pulsed power supply, or a combination thereof. In the plating module 400 according to this embodiment, by applying the voltage of the power supply 409 between the anode 410 and the substrate Wf, a plating current is passed between the anode 410 and the substrate Wf, causing metal ions in the plating solution to be deposited on the substrate Wf as a metal film. 【0024】The plating tank 401 according to this embodiment is a bottomed container with an opening at the top. The plating tank 401 forms a generally cylindrical internal space for storing the plating solution. The plating solution can be any solution containing ions of metal elements that constitute the plating film, and specific examples are not particularly limited. In this embodiment, copper plating is used as an example of a plating process, and copper sulfate solution is used as an example of a plating solution. The plating solution may contain predetermined additives. 【0025】 Plating solution is supplied to the plating tank 401 from the circulation line 407. Plating solution that overflows into the overflow tank 408 is discharged via the circulation line 407. The plating solution discharged from the overflow tank 408 is sent to the reservoir 404 via the circulation line 407, where the composition of the plating solution is adjusted as needed, and then returned to the plating tank 401 via the pump 405 and filter 406. 【0026】 A paddle 412 may be positioned near the substrate Wf inside the plating tank 401. The paddle 412 reciprocates in a direction generally parallel to the plated surface of the substrate Wf, generating a strong flow of the plating solution on the substrate Wf surface. This homogenizes the ions in the plating solution near the surface of the substrate Wf, improving the in-plane uniformity of the plating film formed on the substrate Wf surface. 【0027】 Inside the plating tank 401, a porous resistor 10, also called an ion resistor, is positioned below the paddle. Specifically, the resistor 10 is composed of a porous plate member having multiple pores. The plating solution below the resistor 10 can pass through the resistor 10 and flow above it. This resistor 10 is provided to homogenize the electric field formed between the anode 410 and the substrate Wf. By placing such a resistor 10 in the plating tank 401, the thickness of the plating film (plating layer) formed on the substrate Wf can be made uniform. 【0028】As will be described later, the resistor 10 may have a configuration that includes, for example, a patterned area 11 in which multiple holes (pores) are formed and a non-patterned area 12 in which no holes are formed (Figure 7). The resistor 10 is made of, for example, an electrical insulator. In one example, the resistor 10 is made of a resin such as PVC, PEEK, or PTFE. The resistor 10 may be manufactured by machining the resin or by resin molding. 【0029】 In the plating module 400 according to this embodiment, a resistor mask 900 is placed near the resistor 10 to shield the non-patterned area 12 of the resistor 10 (Figure 3). The resistor mask 900 will be described below. 【0030】 [Resistor Mask] Figure 4A is a plan view of a resistor 10 adjusted by a resistor mask 900 according to one embodiment. Figures 4B to 4E are plan views illustrating the shape of the pattern area 11 of the resistor 10. Figure 5 is a plan view of a resistor mask 900 according to one embodiment. 【0031】 As shown in Figure 4A, the resistor 10 includes, for example, a pattern area 11 in which a plurality of holes (pores) are formed, and a non-pattern area 12 in which no holes are formed. In this embodiment, the resistor 10 has a cross-shaped pattern area 11. As shown in Figure 4B, the pattern area 11 has a shape in which a rectangle 11A and a rectangle 11B are superimposed in a plan view. The pattern area 11 has a shape in which a pair of protruding portions (rectangles) 11C are formed by parts of the rectangle 11B protruding outward on both sides from each side of two opposing sides 11A1 and 11A2 (Figure 4C) that extend in the X-axis direction of the rectangle 11A (Figures 4A and 4B). 【0032】As shown in Figure 4C, quadrilateral 11A has opposing sides 11A-1 and 11A-2 extending in the X-axis direction and opposing sides 11A-3 and 11A-4 extending in the Y-axis direction. As shown in Figure 4D, quadrilateral 11B has opposing sides 11B-1 and 11B-2 extending in the X-axis direction and opposing sides 11B-3 and 11B-4 extending in the Y-axis direction. As shown in Figure 4E, each of the pair of protruding portions 11C has opposing sides 11C-1 and 11C-2 extending in the X-axis direction and opposing sides 11C-3 and 11C-4 extending in the Y-axis direction. 【0033】 The rectangles 11A to 11C are shapes used to describe the shape of the cross-shaped pattern area 11 in plan view, and do not imply that they are composed of one or separate parts. In other words, all or any part of the cross-shaped pattern area 11 can be composed of one or separate parts. 【0034】 The resistor mask 900 is an electromagnetic shielding member that adjusts the exposed area of ​​the pattern area 11 of the resistor 10, and as shown in Figure 5, it has a first mask 910 consisting of mask pieces 910A to 910D and a second mask 920 consisting of a pair of mask pieces 920A and 920B. 【0035】 The mask pieces 910A to D of the first mask 910 are provided corresponding to each corner of the rectangle 11A (Figures 4A to C). Each of the mask pieces 910A to D has an inner contour 911-1 extending linearly in the X-axis direction, an inner contour 911-2 extending linearly in the Y-axis direction from one end of the inner contour 911-1, an inner contour 911-3 extending linearly in the Y-axis direction with the other end of the inner contour 911-1 as one end, and an inner contour 911-4 extending linearly in the X-axis direction from the other end of the inner contour 911-3. The vertices where the inner contours 911-1 and 911-2 intersect are convex toward the inside of the rectangle 11A (resistor pattern 11) (see also Figure 8). The mask pieces 910A to D adjust the dimensions of the shielding area at each corner of the rectangle 11A and adjust the exposed area of ​​the rectangle 11A. 【0036】In this embodiment, each of the mask pieces 910A to D is positioned such that the inner contour 911-3 overlaps with or is outside the side 11A-3 (side 11A-4) extending in the Y-axis direction of the rectangle 11A, and the inner contour 911-4 is positioned outside the pattern area 11. Each of the mask pieces 910A to D is moved along the Y-axis direction. Each of the mask pieces 910A to D is configured such that the inner contour 911-1 adjusts the Y-axis direction dimension of the shielding area by the mask piece at each corner of the rectangle 11A in the pattern area 11, and the inner contour 911-2 adjusts the X-axis direction dimension of the shielding area by the mask piece at each corner of the rectangle 11A in the pattern area 11. 【0037】 In this configuration, the inner contours 911-3 and 911-4 do not contribute to shielding the pattern area 11, so the quadrilateral portion with the inner contours 911-3 and 911-4 as adjacent sides may be omitted. 【0038】 The second mask 920 comprises a pair of mask pieces 920A and 920B. Mask pieces 920A and 920B are provided for the protruding portions 11C that protrude from both sides of the rectangle 11A and have an inner contour 921 that extends linearly in the X-axis direction. The inner contours 921 of mask pieces 920A and 920B are configured to define the Y-axis dimension of the exposed area (shielded area) of the protruding portion 11C (Figure 4A). Mask pieces 920A and 920B are masks for adjusting the Y-axis dimension of the exposed area of ​​the protruding portion 11C and have dimensions that shield the entire area of ​​the protruding portion 11C. Mask pieces 920A and 920B have an X-axis dimension that is larger than the X-axis dimension of the protruding portion 11C (length of side 11C-1 in Figure 4E) and a Y-axis dimension that is larger than the Y-axis dimension of the protruding portion 11C (lengths of sides 11C-3 and 11-C4 in Figure 4E). 【0039】 [Shielding Pattern Examples] Figures 6A to 6C show examples of shielding patterns using the resistor mask 900. Figures 6A to 6C are views of the resistor mask 900 and the resistor 10 from above, with the substrate Wf (including the chip placement patterns D1 to D3) superimposed. 【0040】In Figure 6A, the chips on the substrate Wf are indicated by D1. In this figure, the chips D1 are arranged in four rows along the X-axis. If we refer to the rows as the 1st to 4th rows from positive to negative in the X-axis direction, then the 1st row has three chips D1, the 2nd and 3rd rows each have five chips D1, and the 4th row has three chips D1. The exposed area of ​​the pattern area 11 of the resistor 10 is adjusted using the resistor mask 900 (910A to 910B, 920A to B) so that it aligns with this cross-shaped arrangement pattern of chips D1. In this example, mask pieces 910A and 910B are spaced apart from each other, and mask pieces 910C and 910D are spaced apart from each other. Mask pieces 920A to B are spaced far apart so as to expose the entire area of ​​the protruding portion 11C. 【0041】 In Figure 6B, the chips on the substrate Wf are indicated by D2. The dimensions of chip D2 (Y-axis dimension) are larger than the dimensions of chip D1 (Y-axis dimension). In the figure, the chips D2 are arranged in four rows along the X-axis, with one chip D2 in the first row, three chips D2 in the second and third rows, and one chip D2 in the fourth row. The exposed area of ​​the pattern area 11 of the resistor 10 is adjusted using the resistor mask 900 (910A-910D, 920A-B) so that it aligns with this cross-shaped arrangement pattern of chips D2. In this example, mask piece 910A and mask piece 910B are in contact on the inside (inner contour 911-4 in Figure 5), and mask piece 910C and mask piece 910D are in contact on the inside (inner contour 911-4 in Figure 5), minimizing the exposed area of ​​the rectangle 11A. Furthermore, the mask pieces 920A to B are arranged at wide intervals so as to expose the entire area of ​​the protruding portion 11C. 【0042】In FIG. 6C, the chip on the substrate Wf is indicated by D3. The dimensions of the chip D3 (dimensions in the X-axis and Y-axis directions) are larger than those of the chip D2 (dimensions in the X-axis and Y-axis directions). In this figure, the chips D3 are arranged in three tiers, with one chip D3 arranged in each of the first to third tiers. The arrangement pattern of the chips D3 is square. The exposed area of the pattern area 11 of the resistor 10 is adjusted with the resistor mask 900 (910A to 910B, 920A to B) so as to match such a square arrangement pattern of the chips D3. In this example, the mask pieces 910A and 910B are separated from each other, and the mask pieces 910C and 910D are separated from each other so as to expose the entire area of the square 11A. Also, the mask pieces 920A to B are arranged at a narrow interval so as to shield the entire area of the protruding portion 11C. 【0043】 [Detailed Configuration of Resistor and Resistor Mask] FIG. 7 is a perspective view of the resistor 10 according to an embodiment. FIG. 8 is a plan view showing an arrangement example (example of shielding pattern) of each mask piece of the resistor mask. FIG. 9 is a perspective view showing an arrangement example of each mask piece of the resistor mask. FIG. 10A is a cross-sectional view of the resistor and the resistor mask along the X-X line of FIG. 9. FIG. 10B is a perspective view of the resistor and the resistor mask in a state of being cut along the X-X line of FIG. 9. FIG. 10C is a perspective view of the resistor and the resistor mask from another angle in a state of being cut along the X-X line of FIG. 9. 【0044】 The resistor 10 has, as described above, a pattern area 11 in which a plurality of holes (fine holes) are formed, and a non-pattern area 12 in which no holes are formed. The pattern area 11 is an area through which the plating solution passes through a plurality of holes, and the non-pattern area 12 is an area through which the plating solution does not pass. The pattern area 11 has a cross-shaped pattern in which two types of squares 11A and 11B overlap as described above, that is, a cross-shaped pattern including the square 11A and protruding portions (squares) 11C protruding on both sides of the square 11A. 【0045】As shown in Figures 10A to C, the upper surface of the rectangular portion 11A protrudes by a predetermined thickness T1 from the upper surface 10A of the resistor 10 (the upper surface 10A of the non-pattern area 12), and the lower surface of the rectangular portion 11A is flush with the lower surface 10B of the resistor 10 (the lower surface 10B of the non-pattern area 12) (they have the same surface). Also, as shown in Figures 10A to C, the upper surface of the protruding portion 11C is flush with the upper surface 10A of the resistor 10 (the upper surface 10A of the non-pattern area 12) (they have the same surface), and the lower surface of the protruding portion 11C has a thickness that is predetermined thickness T1 greater downward from the lower surface 10B of the resistor 10 (the lower surface 10B of the non-pattern area 12). As a result, the pattern area 11 has the same thickness throughout its entire region and has a uniform ionic resistance value. 【0046】 By offsetting the rectangular portion 11A and the rectangular portion 11B from each other in the vertical direction (thickness direction), the first mask 910 (mask pieces 910A to D) and the second mask 920 (mask pieces 920A to B) can be arranged in an overlapping manner (see Figure 12). This reduces the installation height dimension of the configuration consisting of the resistor 10 and the resistor mask 900. 【0047】 In other embodiments, the pattern area 11 may be flat throughout its entirety. In that case, it is preferable to provide a gap between the resistor mask 900 (first mask 910, second mask 920) and the resistor 10 (pattern area 11) so that the first mask 910 (mask pieces 910A to D) and the second mask 920 (mask pieces 920A to B) overlap. 【0048】In the example shown in FIGS. 8 to 11, each of the mask pieces 910A to D is arranged such that the inner contour 911-3 overlaps with the side 11A-3 (side 11A-4) extending in the Y-axis direction of the rectangle 11A or is arranged outside the side 11A-3 (side 11A-4), and the inner contour 911-4 is arranged outside the pattern area 11. In this example, each of the mask pieces 910A to D is moved along the Y-axis direction. Each of the mask pieces 910A to D adjusts the dimension in the Y-axis direction of the shielding area at each corner of the rectangle 11A of the pattern area 11 by the inner contour 911-1, and adjusts the dimension in the X-axis direction of the shielding area at each corner of the rectangle 11A of the pattern area 11 by the inner contour 911-2, so as to adjust the exposed area of the rectangle 11. 【0049】 Also, the inner contour 921 of the mask pieces 920A to B is configured to adjust the dimension in the Y-axis direction of the exposed area of the protruding portion 11C (FIG. 4A). 【0050】 In this configuration, since the inner contour 911-3 and the inner contour 911-4 do not contribute to the shielding of the pattern area 11, the rectangular portion having the inner contour 911-3 and the inner contour 911-4 as adjacent sides may be omitted. 【0051】 The state shown in FIGS. 8 to 11 is a state where the resistor mask 900 (mask pieces 910A to D, 920A to B) shields the pattern area 11 of the resistor 10 to the maximum extent. The mask piece 910A and the mask piece 910B approach each other to the maximum extent along the Y-axis direction, and the inner contours 911-4 of these mask pieces are in contact with each other. The mask piece 910C and the mask piece 910D approach each other to the maximum extent along the Y-axis direction, and the inner contours 911-4 of these mask pieces are in contact with each other. Also, the mask pieces 920A to B are separated (for example, separated to the maximum extent) along the Y-axis direction, and the entire area of the protruding portion 11C is shielded. 【0052】In this configuration, by moving the mask pieces 910A to D along the Y-axis, the inner contour 911-1 can adjust the Y-axis dimension of the shielding area by the mask pieces at each corner of the rectangle 11A of the pattern area 11, and the inner contour 911-2 can adjust the X-axis dimension of the shielding area by the mask pieces at each corner of the rectangle 11A of the pattern area 11, thereby adjusting the exposed area of ​​the rectangle 11A. 【0053】 By moving the mask pieces 920A to B along the Y-axis, the inner contour 921 can adjust the Y-axis dimension of the shielding area of ​​the protruding portion 11C of the pattern area 11 by the mask pieces, thereby adjusting the exposed area of ​​the protruding portion 11C. For example, by moving the mask pieces 920A to B so that they are far apart from each other, a part of the protruding portion 11C is exposed (Figures 6A and 6B). Alternatively, by moving the mask pieces 920A to B so that they are closer together, the Y-axis dimension of the exposed area of ​​the protruding portion 11C can be reduced. 【0054】 As described above, the exposure areas of the rectangle 11A and the protruding portion 11C of the pattern area 11 can be adjusted individually. 【0055】 As shown in Figures 10A to C and 11, the mask pieces 910A to D are positioned above the rectangle 11A of the pattern area 11 with a predetermined gap. The mask pieces 920A to B are positioned above the protruding portion 11C (upper surface 10A of the resistor 10) of the pattern area 11 with a predetermined gap, and below the mask pieces 910A to D. The upper surfaces of the mask pieces 920A to B may be substantially flush with the upper surface of the rectangle 11A of the pattern area 11. In this example, as shown in Figures 9 to 11, the inner contours 921 of the mask pieces 920A to B abut against the two sides 11A1 and 11A-2 (Figure 4C) of the rectangle 11A of the pattern area 11 that extend in the X-axis direction, in other words, they abut against the step between the rectangle 11A and the protruding portion 11C. 【0056】Figure 12 is a perspective view showing another arrangement example (an example of a shielding pattern) of each mask piece of the resistor mask. This arrangement example (an example of a shielding pattern) shows a state in which the resistor mask 900 does not shield the pattern area 11 of the resistor 10, i.e., the maximum exposure state. This arrangement example (an example of a shielding pattern) corresponds to a state in which the entire area of ​​the pattern area 11 (rectangle 11A and protruding portion 11C) of the resistor 10 is exposed by moving each mask piece along the Y-axis so that mask pieces 910A and 910C are separated from each other, and mask pieces 920A and 920B are separated from each other, from the arrangement of each mask piece 910A to D and 920A to B in Figures 8 to 11. 【0057】 In this example, the inner contours 911-1 to 911-4 of the mask pieces 910A to D are located outside each corner of the rectangle 11A, so the mask pieces 910A to D do not obscure the pattern area 11 (rectangle 11A). Also, the inner contour 921 of the mask pieces 920A to B is located outside (for example, immediately outside and adjacent to) the edge 11C-2 (Figure 4E) of the protruding portion 11C that extends in the X-axis direction, so the mask pieces 920A to B do not obscure the pattern area 11 (protruding portion 11C). 【0058】 Furthermore, the resistor mask 900 described above may be configured such that each mask piece 910A to D and 920A to B is fixed according to the chip arrangement pattern on the substrate Wf, or the position of each mask piece 910A to D and 920A to B may be movable or adjustable according to different chip arrangement patterns on the substrate Wf. 【0059】[Driving and Controlling the Resistor Mask] Figure 13 is a schematic diagram showing an example of the configuration of the drive mechanism for the resistor mask 900. As shown in Figure 13, actuators 950A to D and 960A to B are provided to drive the mask pieces 910A to D and 920A to B, respectively. The positions of the mask pieces 910A to D in the X-axis and Y-axis directions can be adjusted by actuators 950A to D, and the positions of the mask pieces 920A to B in the Y-axis direction can be adjusted by actuators 960A to B. The actuators 950A to D and 960A to B can be known actuators such as motors, air cylinders, and hydraulic cylinders. The actuators 950A to D and 960A to B can be controlled by a control module 800. 【0060】 Furthermore, when moving the mask pieces 910A to D only in the Y-axis direction, the actuators 950A to D can be configured to have a function and configuration that moves the mask pieces 910A to D only in the Y-axis direction. 【0061】 When moving mask pieces 910A to D in the X-axis direction in addition to the Y-axis direction, the shape, dimensions, and / or movement range of each mask piece 910A to D may be set so that only the inner contours 911-1 and 911-2 of each mask piece 910A to D overlap the pattern area 11 (rectangle 11A). In mask pieces 910A to D, the rectangular portion with inner contours 911-3 and 911-4 as adjacent sides may be omitted. 【0062】 Two or more of the mask pieces 910A to D may be moved synchronously using a common actuator. Alternatively, mask pieces 920A to B may be moved synchronously using a common actuator. The mechanism for moving two or more mask pieces can employ known power transmission or power distribution mechanisms, such as gears, belts, rack and pinion systems. 【0063】The control module 800 may acquire the chip placement pattern included in the board information of the set recipe and automatically drive actuators (actuators 950A to D, 960A to B) according to the chip placement pattern to adjust the position of each mask piece of the resistor mask 900. This can be achieved, for example, by saving a program that performs the above process in memory inside or outside the control module that is accessible by the CPU of the control module 800. 【0064】 (Other Embodiments) (1) In the above embodiment, an example was shown in which the resistor mask 900 is placed directly above the resistor 10. However, the resistor mask 900 may be placed above the resistor 10, away from the resistor 10, or below the resistor 10, either directly below the resistor 10 or away from the resistor 10. (2) In the above embodiment, the resistor mask 900 was placed on one side of the resistor 10. However, the first mask 910 (mask pieces 910A to D) and the second mask 920 (920A to B) may be placed on opposite sides of the resistor 10. Alternatively, each mask piece of the resistor mask 900 (mask pieces 910A to D, 920A to B) may be distributed in any combination on each side of the resistor 10 (upper surface 10A, lower surface 10B). (3) In the above description, the rectangular portion 11A and the protruding portion 11C of the pattern area 11 were offset from each other in the thickness direction, but the pattern area 11 may be flat throughout its entire area. (4) In the above description, a resistor mask 900 that shields the pattern area 11 of the resistor 10 was used as an example, but a mask similar to the resistor mask 900 may be created as an anode mask or as an intermediate mask. (5) In the above description, the case in which the substrate Wf is a circular wafer was used as an example, but each embodiment disclosed herein may be applied to cases where the substrate Wf is a polygonal substrate or any other arbitrary substrate. 【0065】 The present invention can also be described in the following forms. 【0066】[1] According to one embodiment, a resistor mask is provided for use in a resistor that is placed between a substrate and an anode in a plating apparatus and has a cross-shaped pattern area formed by the overlapping of two rectangles, comprising: first to fourth mask pieces provided corresponding to each corner of one of the two rectangles; and fifth and sixth mask pieces provided for each of a pair of protruding portions extending outward from each of the two opposing sides of the one rectangle. Each of the pair of protruding portions corresponds to the portion where the other rectangle protrudes from the first rectangle, and each has the shape of a rectangle. The two overlapping rectangles that form a cross-shaped pattern area, and the protruding portions are shapes used to describe the shape of the cross-shaped pattern area, and do not refer to the fact that they are composed as a single unit or as separate parts. In other words, all or any part of the cross-shaped pattern area can be composed as a single unit or as separate parts. 【0067】 This configuration allows for the suppression of plating thickness in areas where electric fields tend to concentrate on the substrate by shielding arbitrary areas of the resistor, thereby improving plating quality, such as in-plane uniformity of the plating thickness on the substrate. This configuration is particularly suitable for wafers where chip arrangement patterns tend to be cross-shaped or square, or for wafers with large square chips. With this configuration, by shielding each corner of one square and a pair of protruding portions extending outward from each of the two opposing sides of one square within the cross-shaped pattern area of ​​the resistor with separate masks, the pattern area of ​​the resistor can be accurately aligned with the chip arrangement pattern on the substrate, and non-pattern areas on the substrate can be accurately shielded. In other words, non-pattern areas on the substrate can be accurately shielded according to the shape of the chip arrangement pattern on the substrate. This can improve plating quality, such as in-plane uniformity of the plating thickness within the chip. Note that shielding non-pattern areas on the substrate only requires shielding non-pattern areas near areas where electric fields tend to concentrate within the pattern area on the substrate. 【0068】[2] In one embodiment, each of the first to fourth mask pieces has a first inner contour extending linearly in a first direction and a second inner contour extending linearly in a second direction perpendicular to the first direction from one end of the first inner contour, the vertices where the first inner contour and the second inner contour intersect are convex toward the inside of one of the quadrilaterals, and the fifth and sixth mask pieces have a fifth inner contour and a sixth inner contour extending linearly in the first direction, respectively. 【0069】 In this configuration, the dimensions of the shielding area at each corner of the one rectangle can be adjusted by the first and second inner contours of the first to fourth mask pieces. Furthermore, the dimensions of the pair of protruding portions (rectangles) in the second direction can be adjusted by the fifth and sixth inner contours of the fifth and sixth mask pieces. As a result, non-patterned areas on the substrate can be accurately shielded according to the chip placement pattern on the substrate, and plating quality such as in-plane uniformity of the plating film thickness within the chip can be improved. 【0070】 [3] In one embodiment, each of the first to fourth mask pieces further has a third inner contour extending linearly in the second direction with the other end of the first inner contour as one end, and a fourth inner contour extending linearly in the first direction from the other end of the third inner contour. 【0071】 According to this configuration, by arranging the first to fourth mask pieces so that the third inner contour and the fourth inner contour overlap with the pattern area, the degree of freedom in adjusting the dimensions of the resistor's pattern area can be further improved. 【0072】 [4] In one embodiment, a plating apparatus is provided comprising: a plating tank; an anode disposed in the plating tank facing a substrate holder that holds a substrate; a resistor disposed in the plating tank between the substrate holder and the anode and having a cross-shaped pattern area formed by two overlapping rectangles; and a resistor mask as described above. 【0073】 This configuration makes it possible to realize a plating apparatus that achieves the effects described above. 【0074】[5] In one embodiment, the resistor has a first surface on the substrate holder side and a second surface on the anode side, one of the rectangular portions of the pattern area protrudes from the first surface by a predetermined thickness in the thickness direction of the resistor, the pair of protruding portions protrude from the second surface by the predetermined thickness in the thickness direction of the resistor, and the cross-shaped pattern area has the same thickness throughout its entire region. 【0075】 This configuration allows for uniform resistance values ​​across the entire pattern area while varying the heights of the first to fourth mask pieces positioned for one of the rectangular patterns and the fifth to sixth mask pieces positioned for a pair of protruding portions, thereby overlapping the first to fourth mask pieces and the fifth to sixth mask pieces. As a result, the overall installation height of the resistor mask and resistor configuration can be suppressed. 【0076】 [6] In one embodiment, the first to fourth mask pieces are arranged with a gap between them in the thickness direction of the resistor and the one rectangular portion, and the fifth and sixth mask pieces are arranged with a gap between them and the pair of protruding portions and the first to fourth mask pieces in the thickness direction of the resistor, at a height between the pair of protruding portions and the first to fourth mask pieces. 【0077】 This configuration allows for smooth movement while avoiding interference between overlapping mask pieces. 【0078】 [7] In one embodiment, the first to sixth mask pieces are arranged to be movable. 【0079】 In this configuration, the position of each mask piece of the resistor mask can be appropriately adjusted according to the chip placement pattern on the substrate (non-patterned area on the substrate), and the non-patterned area on the substrate can be appropriately shielded. 【0080】[8] According to one embodiment, the device further comprises: a first actuator for moving the first to fourth mask pieces in at least one of the first and second directions, the first actuator for moving the first to fourth mask pieces independently or partially synchronously; and a second actuator for moving the fifth and sixth mask pieces in the second direction, the second actuator for moving the fifth and sixth mask pieces independently or synchronously. 【0081】 In this configuration, the position of each mask piece of the resistor mask can be quickly adjusted by an actuator according to the chip placement pattern on the substrate (non-patterned area on the substrate), thereby properly shielding the non-patterned area on the substrate. With this configuration, even if the chip size changes, the position of each mask piece can be adjusted by the actuator, reducing the time required to replace the resistor and / or fixed mask (resistor mask that is not moved by the actuator), and enabling quick adaptation to new recipes. 【0082】 [9] According to one embodiment, the device further includes a control device that drives the first and second actuators to automatically adjust the positions of the first to sixth mask pieces according to the arrangement pattern of the chips on the substrate. 【0083】 This configuration allows for the automatic adjustment of the position of each mask piece of the resistor mask according to the chip placement pattern on the substrate (non-patterned areas on the substrate), reducing the time required to replace resistors and / or fixed masks (resistor masks that are not moved by actuators), and enabling quick adaptation to new recipes. 【0084】

[10] In one embodiment, the first to sixth mask pieces are arranged on the side of one of the two opposing surfaces of the resistor, or are distributed on the sides of each of the two surfaces of the resistor. 【0085】 Each mask piece only needs to adequately shield the exposed area of ​​the resistor's pattern area in a plan view, so it can be placed on one side or both sides of the resistor. 【0086】

[11] According to one embodiment, a plating method is provided which includes: preparing a resistor having a cross-shaped pattern area formed by the overlapping of two quadrilaterals; a resistor mask having first to fourth mask pieces provided corresponding to each corner of one of the two quadrilaterals, and fifth and sixth mask pieces provided for each of a pair of protruding portions extending outward from each of the two opposing sides of the one quadrilateral; adjusting the exposed area of ​​the pattern area of ​​the resistor by adjusting the positions of the first to sixth mask pieces of the resistor mask according to the arrangement pattern of chips on the substrate; and plating the substrate using the resistor and the adjusted resistor mask. 【0087】 This configuration can produce effects similar to those described in [1] and [7]. 【0088】 While embodiments of the present invention have been described above, the embodiments of the invention described above are for the purpose of facilitating understanding of the present invention and do not limit it. The present invention can be modified and improved without departing from its spirit, and of course, the present invention includes equivalents thereof. Furthermore, any combination of embodiments and modifications is possible to the extent that at least some of the above-mentioned problems can be solved or at least some of the effects can be achieved, and any combination or omission of each component described in the claims and specification is possible. 【0089】 All disclosures, including the specification, claims, drawings, and abstracts, of Japanese Patent Publication No. 2022-59561 (Patent Document 1) and Japanese Patent Publication No. 7014553 (Patent Document 2) are incorporated into this application by reference. 【0090】10 Resistor 10A Top surface 10B Bottom surface 11 Pattern area 11A Rectangle 11B Rectangle 11C Protruding part (rectangle) 12 Non-pattern area 400 Plating module 401 Plating bath 403 Substrate holder 404 Reservoir 405 Pump 406 Filter 407 Circulation line 408 Overflow bath 409 Power supply 410 Anode 411 Drive mechanism 900 Resistor mask 910 First mask 910A-910D Mask piece 911-1-911-4 Inner contour 920 Second mask 921 Inner contour 920A-B Mask piece 950A-D Actuator 960A-B Actuator D1-D3 Chip

Claims

1. A resistor mask for use in a resistor placed between a substrate and an anode in a plating apparatus, having a cross-shaped pattern area formed by two overlapping rectangles, comprising: first to fourth mask pieces provided corresponding to each corner of one of the two rectangles; and fifth and sixth mask pieces provided for each of a pair of protruding portions extending outward from each of the two opposing sides of the one rectangle.

2. A resistor mask according to claim 1, wherein each of the first to fourth mask pieces has a first inner contour extending linearly in a first direction and a second inner contour extending linearly in a second direction perpendicular to the first direction from one end of the first inner contour, the vertices where the first inner contour and the second inner contour intersect are convex toward the inside of one of the rectangles, and the fifth mask piece and the sixth mask piece each have a fifth inner contour and a sixth inner contour extending linearly in the first direction, respectively.

3. A resistor mask according to claim 2, wherein each of the first to fourth mask pieces further comprises: a third inner contour extending linearly in the second direction with the other end of the first inner contour as one end; and a fourth inner contour extending linearly in the first direction from the other end of the third inner contour.

4. A plating apparatus comprising: a plating tank; an anode disposed in the plating tank facing a substrate holder that holds a substrate; a resistor disposed between the substrate holder and the anode in the plating tank and having a cross-shaped pattern area formed by two overlapping rectangles; and a resistor mask according to any one of claims 1 to 3.

5. A plating apparatus according to claim 4, wherein the resistor has a first surface on the substrate holder side and a second surface on the anode side, one of the rectangular portions of the pattern area protrudes from the first surface by a predetermined thickness in the thickness direction of the resistor, the pair of protruding portions protrude from the second surface by the predetermined thickness in the thickness direction of the resistor, and the cross-shaped pattern area has the same thickness throughout its entire region.

6. A plating apparatus according to claim 5, wherein the first to fourth mask pieces are arranged with a gap between them in the thickness direction of the resistor and the one rectangular portion, and the fifth and sixth mask pieces are arranged with a gap between them and the pair of protruding portions and the first to fourth mask pieces in the thickness direction of the resistor, at a height between the pair of protruding portions and the first to fourth mask pieces.

7. A plating apparatus according to claim 4, wherein the first to sixth mask pieces are movably arranged.

8. A plating apparatus according to claim 7, further comprising: a first actuator for moving the first to fourth mask pieces in at least one of the first and second directions, the first actuator for moving the first to fourth mask pieces independently or partially synchronously; and a second actuator for moving the fifth and sixth mask pieces in the second direction, the second actuator for moving the fifth and sixth mask pieces independently or synchronously.

9. A plating apparatus according to claim 8, further comprising a control device that drives the first and second actuators to automatically adjust the positions of the first to sixth mask pieces according to the arrangement pattern of chips on the substrate.

10. A plating apparatus according to claim 4, wherein the first to sixth mask pieces are arranged on the side of one of the two opposing surfaces of the resistor, or are distributed and arranged on the sides of each of the two surfaces of the resistor.

11. A plating method comprising: preparing a resistor having a cross-shaped pattern area formed by the overlapping of two quadrilaterals; a resistor mask comprising first to fourth mask pieces provided corresponding to each corner of one of the two quadrilaterals, and fifth and sixth mask pieces provided for each of a pair of protruding portions extending outward from each of the two opposing sides of the one quadrilateral; adjusting the exposed area of ​​the pattern area of ​​the resistor by adjusting the positions of the first to sixth mask pieces of the resistor mask according to the arrangement pattern of chips on the substrate; and plating the substrate using the resistor and the adjusted resistor mask.

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