High-frequency module and communication device

Abstract

Provided is a high-frequency module capable of reducing deterioration in inductor characteristics and improving heat dissipation of an inductor. A high-frequency module (1) is provided with a mounting substrate (2), an inductor (3), a conductor (4), and a wiring conductor (5). The inductor (3) is built into the mounting substrate (2). The conductor (4) overlaps the inductor (3) in a plan view in the thickness direction (D1) of the mounting substrate (2). The conductor (4) has an open circuit. The wiring conductor (5) is connected to the conductor (4).

Description

High-frequency module and communication device 【0001】 The present invention generally relates to a high-frequency module and a communication device, and more particularly to a high-frequency module and a communication device including an inductor. 【0002】 Patent Document 1 describes a substrate with a built-in coil. In the substrate with a built-in coil described in Patent Document 1, heat conduction paths are in contact with the upper and lower sides of the coil conductor. The heat conduction paths are formed of a non-metal. 【0003】 Japanese Patent Application Laid-Open No. 2013-98311 【0004】 However, in a conventional high-frequency module including the substrate with a built-in coil described in Patent Document 1, since the heat conduction paths are formed of a non-metal, it is difficult to improve the heat dissipation property. 【0005】 The present invention has been made in view of the above points, and an object thereof is to provide a high-frequency module and a communication device capable of reducing deterioration of inductor characteristics of an inductor and improving heat dissipation property. 【0006】 A high-frequency module according to an aspect of the present invention includes a mounting substrate, an inductor, a conductor, and a wiring conductor. The inductor is built in the mounting substrate. The conductor overlaps the inductor in a plan view from the thickness direction of the mounting substrate. The conductor has an open circuit. The wiring conductor is connected to the conductor. 【0007】 A communication device according to an aspect of the present invention includes the high-frequency module and a signal processing circuit. The signal processing circuit is connected to the high-frequency module. 【0008】 According to the high-frequency module and the communication device according to the above aspect of the present invention, it is possible to reduce deterioration of inductor characteristics of an inductor and improve heat dissipation property. 【0009】Figure 1 is a perspective view of the main part of a high-frequency module according to Embodiment 1. Figure 2 is a top view of the main part of the same high-frequency module. Figure 3 is a side view of the main part of the same high-frequency module. Figure 4 is an explanatory diagram for explaining the function of the conductor in the same high-frequency module. Figure 5 is a perspective view of the main part of a high-frequency module according to Embodiment 2. Figure 6 is a top view of the main part of the same high-frequency module. Figure 7 is an explanatory diagram for explaining the function of the conductor in the same high-frequency module. Figure 8 is a perspective view of the main part of a high-frequency module according to Embodiment 3. Figure 9 is a top view of the main part of the same high-frequency module. Figure 10 is a side view of the main part of the same high-frequency module. Figure 11 is a perspective view of the main part of a high-frequency module according to Embodiment 4. Figure 12 is a side view of the main part of the same high-frequency module. Figure 13 is a perspective view of the main part of a high-frequency module according to Embodiment 5. Figure 14 is a side view of the main part of the same high-frequency module. Figure 15 is a perspective view of the main part of a high-frequency module according to Embodiment 6. Figure 16 is a top view of the main part of the same high-frequency module. Figure 17 is a side view of the main part of the high-frequency module shown above. Figure 18 is a perspective view of the main part of the high-frequency module according to Embodiment 7. Figure 19 is a top view of the main part of the high-frequency module shown above. Figure 20 is a perspective view of the main part of the high-frequency module according to Embodiment 8. Figure 21 is a top view of the main part of the high-frequency module shown above. Figure 22 is a perspective view of the main part of the high-frequency module according to Embodiment 9. Figure 23 is a side view of the main part of the high-frequency module shown above. Figure 24 is a perspective view of the main part of the high-frequency module according to a modified example of Embodiment 9. Figure 25 is a side view of the main part of the high-frequency module shown above. Figure 26 is a perspective view of the main part of the high-frequency module according to Embodiment 10. Figure 27 is a side view of the main part of the high-frequency module shown above. Figure 28 is a side view of the main part of the high-frequency module according to a modified example of Embodiment 10. Figure 29 is a perspective view of the main part of the high-frequency module according to Embodiment 11. Figure 30 is a side view of the main part of the high-frequency module shown above. Figure 31 is a perspective view of the main part of the high-frequency module according to Modification 1 of Embodiment 11. Figure 32 is a side view of the main part of the high-frequency module shown above.Figure 33 is a perspective view of the main part of a high-frequency module according to a modified example 2 of Embodiment 11. Figure 34 is a side view of the main part of the same high-frequency module. Figure 35 is a schematic diagram of a communication device according to Embodiment 12. 【0010】 The high-frequency modules according to Embodiments 1 to 11 and the communication device of Embodiment 12 will be described below with reference to the drawings. The figures referenced in the embodiments below are schematic diagrams, and the size and thickness ratios of each component in the figures do not necessarily reflect the actual dimensional ratios. The first direction D21 and the second direction D22 are perpendicular to the thickness direction D1 of the mounting substrate 2. The first direction D21 and the second direction D22 are perpendicular to each other. 【0011】 (Embodiment 1) (1) High-frequency module The configuration of the high-frequency module 1 according to Embodiment 1 will be described with reference to the drawings. 【0012】 As shown in Figure 1, the high-frequency module 1 according to Embodiment 1 comprises a mounting substrate 2, an inductor 3, a conductor 4, and a wiring conductor 5. 【0013】 The inductor 3 is embedded in the mounting board 2. The conductor 4 overlaps with the inductor 3 in a plan view from the thickness direction D1 of the mounting board 2. The conductor 4 has an open circuit. The wiring conductor 5 is connected to the conductor 4. 【0014】 According to the high-frequency module 1 of Embodiment 1, it is possible to reduce the degradation of the inductor characteristics of the inductor 3 and improve heat dissipation. 【0015】 (2) Components of the high-frequency module The high-frequency module 1 according to Embodiment 1 comprises a mounting substrate 2, an inductor 3, a conductor 4, and a wiring conductor 5, as shown in Figure 1. 【0016】The high-frequency module 1 has a transmitting function that transmits a high-frequency signal (transmitting signal). In other words, the high-frequency module 1 according to Embodiment 1 is a transmitting module. The high-frequency module 1 may also have a transmitting function that transmits a high-frequency signal (transmitting signal) and a receiving function that receives a high-frequency signal (receiving signal). In other words, the high-frequency module 1 may be a transmitting and receiving module. 【0017】 The components of the high-frequency module 1 according to Embodiment 1 will be described below with reference to the drawings. 【0018】 (2.1) Mounting board The mounting board 2 has a first main surface 21 and a second main surface 22, as shown in Figures 1 and 3. The first main surface 21 and the second main surface 22 face each other. More specifically, the first main surface 21 and the second main surface 22 face each other in the thickness direction D1 of the mounting board 2. The mounting board 2 is a substrate for arranging a plurality of electronic components, and is, for example, a rectangular plate. The first main surface 21 and the second main surface 22 are, for example, rectangular. The second main surface 22 faces the external substrate when the high-frequency module 1 is mounted on an external substrate (not shown). 【0019】 The mounting substrate 2 has a plurality of dielectric layers 23 and a plurality of conductive layers. The mounting substrate 2 is, for example, a multilayer substrate having a plurality of dielectric layers 23 and a plurality of conductive layers. The plurality of dielectric layers 23 and the plurality of conductive layers are stacked in the thickness direction D1 of the mounting substrate 2. 【0020】 Each of the multiple conductive layers includes one or more conductive portions in a plane perpendicular to the thickness direction D1 of the mounting substrate 2. The multiple conductive layers are formed in a predetermined pattern defined for each layer. The material of each conductive layer is, for example, copper. 【0021】 The multiple conductive layers include a ground layer 24. The ground layer 24 is a layer set to ground potential (reference potential) and is provided, for example, inside the mounting substrate 2. When the high-frequency module 1 is placed on an external substrate (e.g., a motherboard), the ground layer 24 is connected to the ground of the external substrate via via conductors, etc., of the mounting substrate 2 and maintained at ground potential (reference potential). 【0022】The mounting substrate 2 is, for example, an LTCC (Low Temperature Co-fired Ceramics) substrate. However, the mounting substrate 2 is not limited to an LTCC substrate; for example, it may be a printed circuit board, an HTCC (High Temperature Co-fired Ceramics) substrate, or a resin multilayer substrate. 【0023】 (2.2) Inductor The inductor 3 is built into the mounting board 2 as shown in Figures 1 and 3. The inductor 3 has a plurality of pattern conductors 31, 32, 33 (3 in the example of Figure 3), a plurality of via conductors 34, 35, 36 (3 in the example of Figure 3), and a pattern wiring section 37. The inductor 3 has a space 38 in the center as shown in Figures 1 and 2. The inductor 3 is made of a metal such as copper, for example. 【0024】 The inductor 3 is formed in an annular (frame-like) shape when viewed from the thickness direction D1 of the mounting substrate 2. The multiple pattern conductors 31, 32, and 33 are arranged at different positions in the thickness direction D1 of the mounting substrate 2. The multiple pattern conductors 31, 32, and 33 are arranged in the order of pattern conductor 31, pattern conductor 32, and pattern conductor 33 in the thickness direction D1 of the mounting substrate 2. The multiple pattern conductors 31, 32, and 33 overlap each other when viewed from the thickness direction D1 of the mounting substrate 2. Pattern conductor 31 and pattern conductor 32 are connected by a via conductor 34. Pattern conductor 31 is connected to other electronic components, etc., by a pattern wiring section 37. Pattern conductor 32 and pattern conductor 33 are connected by a via conductor 35. Each of the multiple pattern conductors 31, 32, and 33 is provided on a plane that extends in the first direction D21 and the second direction D22. 【0025】 Inductor 3 is connected to the ground layer 24 (ground). Specifically, the pattern conductor 33 and the ground layer 24 are connected by a via conductor 36. 【0026】Inductor 3 can be used, for example, as a standalone inductor, or as the primary winding or secondary winding of a transformer. The transformer in which inductor 3 is used is, for example, a transformer installed on the output side of a power amplifier. 【0027】 (2.3) Conductors As shown in Figures 1 and 2, the conductor 4 overlaps with the inductor 3 in a plan view from the thickness direction D1 of the mounting substrate 2. "The conductor 4 overlaps with the inductor 3 in a plan view from the thickness direction D1 of the mounting substrate 2" includes the cases in which the entire conductor 4 overlaps with the inductor 3 in a plan view from the thickness direction D1 of the mounting substrate 2, the cases in which a part of the conductor 4 overlaps with the inductor 3 in a plan view from the thickness direction D1 of the mounting substrate 2, the cases in which the entire conductor 4 overlaps with the inductor 3 in a plan view from the thickness direction D1 of the mounting substrate 2, and the cases in which the conductor 4 overlaps with a part of the inductor 3 in a plan view from the thickness direction D1 of the mounting substrate 2. In other words, "The conductor 4 overlaps with the inductor 3 in a plan view from the thickness direction D1 of the mounting substrate 2" means that at least a part of the conductor 4 overlaps with at least a part of the inductor 3 in a plan view from the thickness direction D1 of the mounting substrate 2. 【0028】 The conductor 4 has a strip-shaped pattern conductor 42. The width W11 of the conductor 4 is, for example, the same as the width W31 of the inductor 3, i.e., the width of the pattern conductor 31 of the inductor 3. The conductor 4 is provided on a plane that extends in a first direction D21 and a second direction D22. The conductor 4 is made of a metal such as copper. 【0029】 The conductor 4 has an open circuit. In other words, the conductor 4 has a gap 41. More specifically, a gap 41 is formed between the end 43 and the end 44 of the conductor 4. Because the conductor 4 has an open circuit, unlike when the conductor is a closed circuit, current does not continue to flow along the longitudinal direction of the conductor 4. 【0030】The conductor 4 is positioned adjacent to the inductor 3 in the thickness direction D1 of the mounting substrate 2. "The conductor 4 is positioned adjacent to the inductor 3" means that, in the thickness direction D1 of the mounting substrate 2, the conductor 4 is positioned alongside the inductor 3 in a state where there are no other conductors between the conductor 4 and the inductor 3. In Embodiment 1, the conductor 4 is positioned between the pattern conductor 31 of the inductor 3 and the first main surface 21 of the mounting substrate 2 (see Figure 3) in the thickness direction D1 of the mounting substrate 2. 【0031】 The presence of the conductor 4 allows heat generated in the inductor 3 to be dissipated from the inductor 3 to the conductor 4. This improves heat dissipation compared to when the conductor 4 is not provided, thereby reducing the temperature of the inductor 3. 【0032】 The width W11 of the conductor 4 is the same as the width W31 of the inductor 3 when viewed from the thickness direction D1 of the mounting substrate 2. 【0033】 In conductor 4, the direction of the magnetic flux φ1 (see Figure 4) of inductor 3 is opposite on the inner and outer sides in the longitudinal direction. 【0034】 (2.4) Wiring conductor The wiring conductor 5 is connected to the conductor 4 as shown in Figures 1 to 3. The wiring conductor 5 comprises a pattern conductor 51 and a via conductor 52. The pattern conductor 51 is connected to the conductor 4. The via conductor 52 is connected to the pattern conductor 51. The wiring conductor 5 is made of a metal such as copper. 【0035】 The wiring conductor 5 is connected to the outer edge 49 of the conductor 4. The pattern conductor 51 is provided so as to extend outward from the outer edge 49 of the conductor 4. As a result, the wiring conductor 5 does not overlap with the inductor 3 in a plan view from the thickness direction D1 of the mounting substrate 2. By making the pattern conductor 51 longer, the via conductor 52 of the wiring conductor 5 can be moved away from the inductor 3. 【0036】As shown in Figures 1 and 2, the wiring conductor 5 is connected to the portion of the conductor 4 other than the ends 43 and 44. In Embodiment 1, the wiring conductor 5 is connected to the central portion 45 of the conductor 4. Specifically, the pattern conductor 51 of the wiring conductor 5 is connected to the central portion 45 of the conductor 4. 【0037】 As shown in Figure 3, the wiring conductor 5 is connected to the ground layer 24 (ground). More specifically, the via conductor 52 is connected to the ground layer 24. The wiring conductor 5 connects the conductor 4 to the ground layer 24 via the pattern conductor 51 and the via conductor 52. 【0038】 The presence of the wiring conductor 5 allows heat transferred from the wiring conductor 5 to the ground layer 24. This improves heat dissipation compared to cases where the wiring conductor 5 is not provided or where the wiring conductor 5 is not connected to the conductor 4, thereby lowering the temperature of the inductor 3. 【0039】 As shown in Figure 2, the width W21 of the pattern conductor 51 of the wiring conductor 5 is the same as, for example, the width W31 of the inductor 3 and the width W11 of the conductor 4 in a plan view from the thickness direction D1 of the mounting substrate 2. 【0040】 In the wiring conductor 5, the direction of the magnetic flux φ1 (see Figure 4) of the inductor 3 is the same on both sides in the longitudinal direction. 【0041】 (3) Operating Principle Next, the operating principle that enables both temperature reduction of the inductor 3 and the performance of the inductor characteristics in the high-frequency module 1 according to Embodiment 1 will be explained with reference to Figure 4. 【0042】 When the magnetic flux φ1 of the inductor 3 passes through the space 46 of the conductor 4, a change in the magnetic flux φ1 generates an electromotive force due to electromagnetic induction. When an electromotive force is generated, charge movement occurs within the conductor 4 (pattern conductor 42). 【0043】As shown in (a) of FIG. 4, when the magnetic flux φ1 of the inductor 3 passes through the space 46 of the conductor 4 from the back side of the paper surface to the front side of the paper surface, positive charges and negative charges move within the conductor 4. Positive charges move to the side of the end 44 of the conductor 4 rather than the central portion 45 of the conductor 4. As it approaches the end 44 from the central portion 45, the amount of positive charges increases. On the other hand, negative charges move to the side of the end 43 of the conductor 4 rather than the central portion 45 of the conductor 4. As it approaches the end 43 from the central portion 45, the amount of negative charges increases. Since the central portion 45 is connected to the ground layer 24 (see FIG. 3), there are no charges in the central portion 45. Or, compared with the ends 43 and 44, there are fewer charges in the central portion 45. 【0044】 As shown in (b) of FIG. 4, when the magnetic flux φ1 of the inductor 3 passes through the space 46 of the conductor 4 from the front side of the paper surface to the back side of the paper surface, positive charges and negative charges move. Positive charges move to the end 43 of the conductor 4 rather than the central portion 45 of the conductor 4. As it approaches the end 43 from the central portion 45, the amount of positive charges increases. On the other hand, negative charges move to the side of the end 44 of the conductor 4 rather than the central portion 45 of the conductor 4. As it approaches the end 44 from the central portion 45, the amount of negative charges increases. Since the central portion 45 is connected to the ground layer 24 (see FIG. 3), there are no charges in the central portion 45. 【0045】 In FIG. 4, a gap 41 is formed in the conductor 4, and since the conductor 4 has an open circuit, eddy currents do not continue to flow in the conductor 4. As a result, compared with the case where the conductor is a closed circuit, the decrease in the Q value of the inductor 3 is small. Also, since the conductor 4 is connected to the ground layer 24 at the central portion 45, the amount of charge movement within the conductor 4 is small. As a result, the decrease in the Q value of the inductor 3 is even smaller. 【0046】 Compared with the case where no conductor is provided, the heat generated in the inductor 3 can be dissipated by the conductor 4, so the temperature of the inductor 3 can be lowered. Also, compared with the case where the conductor has a closed circuit, the Q value of the inductor 3 can be increased. 【0047】Table 1 shows the average temperature and inductor characteristics of the inductor in Embodiment 1, Comparative Example 1, Comparative Example 2, and Comparative Example 3. Comparative Example 1 is the case where no conductor and wiring conductor are provided. Comparative Example 2 is the case where the conductor is a closed circuit. Comparative Example 3 is the case where the conductor and the wiring conductor are not connected. 【0048】 【0049】 In Embodiment 1, the average temperature of the inductor 3 is lower than in the case where no conductor and wiring conductor are provided (Comparative Example 1) and in the case where the conductor and the wiring conductor are not connected (Comparative Example 3). Also, in Embodiment 1, the degradation of the L value (inductance) and Q value of the inductor 3 can be reduced as compared with the case where the conductor is a closed circuit (Comparative Example 2) and the case where the conductor and the wiring conductor are not connected (Comparative Example 3). 【0050】 (4) Effects The high-frequency module 1 according to Embodiment 1 includes a mounting substrate 2, an inductor 3, a conductor 4, and a wiring conductor 5. The inductor 3 is built in the mounting substrate 2. The conductor 4 overlaps the inductor 3 in a plan view from the thickness direction D1 of the mounting substrate 2. The conductor 4 has an open circuit. The wiring conductor 5 is connected to the conductor 4. 【0051】 According to the high-frequency module 1 according to Embodiment 1, since the heat from the inductor 3 can be radiated to the wiring conductor 5 by the conductor 4, the temperature of the inductor 3 can be lowered. Also, since the conductor 4 has an open circuit, the generation of eddy currents due to the magnetic flux φ1 of the inductor 3 in the conductor 4 can be reduced. As a result, it is possible to reduce the degradation of the inductor characteristics of the inductor 3 and improve the heat dissipation. 【0052】 In the high-frequency module 1 according to Embodiment 1, the wiring conductor 5 is connected to a portion of the conductor 4 other than the end portions 43 and 44. 【0053】 According to the high-frequency module 1 according to Embodiment 1, since the movement of charges in the conductor 4 due to the magnetic flux φ1 of the inductor 3 can be reduced, it is possible to further improve the inductor characteristics of the inductor 3. 【0054】In the high-frequency module 1 according to Embodiment 1, the wiring conductor 5 is connected to the central portion 45 of the conductor 4. 【0055】 According to the high-frequency module 1 of Embodiment 1, the movement of charge within the conductor 4 due to the magnetic flux φ1 of the inductor 3 can be minimized, making it possible to further improve the inductor characteristics of the inductor 3. 【0056】 In the high-frequency module 1 according to Embodiment 1, the wiring conductor 5 is connected to ground (ground layer 24). 【0057】 According to the high-frequency module 1 of Embodiment 1, the heat transferred from the inductor 3 to the conductor 4 can be transferred from the wiring conductor 5 to the ground (ground layer 24), thereby lowering the temperature of the inductor 3. As a result, it is possible to improve the inductor characteristics of the inductor 3 and further improve the heat dissipation. 【0058】 (Embodiment 2) The high-frequency module 1 according to Embodiment 2 differs from the high-frequency module according to Embodiment 1 (see Figure 1) in that the wiring conductor 5 is connected to the end 44 of the conductor 4, as shown in Figures 5 and 6. Regarding the high-frequency module 1 according to Embodiment 2, components similar to those in the high-frequency module 1 according to Embodiment 1 are denoted by the same reference numerals and their descriptions are omitted. 【0059】 (1) The high-frequency module 1 according to the configuration embodiment 2 comprises a mounting board 2, an inductor 3, a conductor 4, and a wiring conductor 5, as shown in Figures 5 and 6. 【0060】 The conductor 4 of Embodiment 2 has a gap 41 as shown in Figures 5 and 6. The gap 41 is formed between the end 43 and the end 44 of the conductor 4. The wiring conductor 5 is connected to the end 44 of the conductor 4. Regarding the conductor 4 of Embodiment 2, the same configuration and function as the conductor 4 of Embodiment 1 (see Figure 1) will not be described. 【0061】 (2) Operating Principle Next, the operating principle that enables both temperature reduction of the inductor 3 and the performance of the inductor characteristics in the high-frequency module 1 according to Embodiment 2 will be explained with reference to Figure 7. 【0062】 When the magnetic flux φ1 of the inductor 3 passes through the space 46 of the conductor 4, a change in the magnetic flux φ1 generates an electromotive force due to electromagnetic induction. When an electromotive force is generated, charge movement occurs within the conductor 4 (pattern conductor 42). 【0063】 As shown in Figure 7(a), when the magnetic flux φ1 of the inductor 3 passes through the space 46 of the conductor 4 from the back of the paper to the front of the paper, positive and negative charges move within the conductor 4. Since the negative charges move through the wiring conductor 5 to the ground layer 24 (see Figure 6), positive charges remain in the conductor 4. The amount of positive charge increases as you move from the end 44 connected to the ground layer 24 to the end 43 not connected to the ground layer 24. 【0064】 As shown in Figure 7(b), when the magnetic flux φ1 of the inductor 3 passes through the space 46 of the conductor 4 from the front side of the paper to the back side of the paper, positive and negative charges move within the conductor 4. Since the positive charges move through the wiring conductor 5 to the ground layer 24 (see Figure 6), negative charges remain in the conductor 4. The amount of negative charge increases as you move from the end 44 connected to the ground layer 24 to the end 43 not connected to the ground layer 24. 【0065】 In Figure 7, a gap 41 is formed in the conductor 4, and since the conductor 4 has an open circuit, eddy currents do not continuously flow through the conductor 4. As a result, the decrease in the Q value of the inductor 3 is smaller compared to when the conductor is a closed circuit. 【0066】 Compared to a configuration without a conductor, the heat generated in the inductor 3 can be dissipated by the conductor 4, thus lowering the temperature of the inductor 3. Furthermore, compared to a configuration where the conductor forms a closed circuit, the Q value of the inductor 3 can be increased. 【0067】 Table 2 shows the average temperature and inductor characteristics of the inductors in Embodiment 2, Comparative Example 1, Comparative Example 2, and Comparative Example 3. Comparative Example 1 is the case where no conductor and wiring conductor are provided. Comparative Example 2 is the case where the conductor is a closed circuit. Comparative Example 3 is the case where the conductor and wiring conductor are not connected. 【0068】 【0069】 In Embodiment 2, the average temperature of the inductor 3 is lower compared to cases where no conductor and wiring conductor are provided (Comparative Example 1) and cases where the conductor and wiring conductor are not connected (Comparative Example 3). Furthermore, in Embodiment 2, the degradation of the L value (inductance) and Q value of the inductor 3 can be reduced compared to cases where the conductor is a closed circuit (Comparative Example 2) and cases where the conductor and wiring conductor are not connected (Comparative Example 3). 【0070】 (3) Effect: In the high-frequency module 1 according to Embodiment 2, similar to the high-frequency module 1 according to Embodiment 1, it is possible to reduce the degradation of the inductor characteristics of the inductor 3 and improve heat dissipation. 【0071】 (Embodiment 3) The high-frequency module 1 according to Embodiment 3 differs from the high-frequency module 1 according to Embodiment 1 (see Figure 1) in that the conductor 4 has multiple open circuits, as shown in Figures 8 to 10. Regarding the high-frequency module 1 according to Embodiment 3, components similar to those in the high-frequency module 1 according to Embodiment 1 are denoted by the same reference numerals and their descriptions are omitted. 【0072】 (1) The high-frequency module 1 according to the configuration embodiment 3 comprises a mounting board 2, an inductor 3, a conductor 4, and a plurality of (two in the example of Figure 8) wiring conductors 5, as shown in Figures 8 to 10. 【0073】 As shown in Figures 8 to 10, the conductor 4 of Embodiment 3 has multiple open circuits. Note that the configuration and function of the conductor 4 of Embodiment 3 are the same as those of the conductor 4 of Embodiment 1 (see Figure 1), but this explanation will be omitted. 【0074】 The conductor 4 has a first conductor portion 4a and a second conductor portion 4b. Gaps 41A and 41B are formed between the first conductor portion 4a and the second conductor portion 4b. The first conductor portion 4a and the second conductor portion 4b are both open circuits. 【0075】 As shown in Figures 8 to 10, the multiple wiring conductors 5 of Embodiment 3 are connected to the conductor 4. The multiple wiring conductors 5 include wiring conductor 5A and wiring conductor 5B. 【0076】The wiring conductor 5A connects the first conductor section 4a and the ground layer 24. The wiring conductor 5A comprises a pattern conductor 51A and a via conductor 52A. The pattern conductor 51A is connected to the first conductor section 4a. The via conductor 52A is connected to the pattern conductor 51A and the ground layer 24. The wiring conductor 5A connects the first conductor section 4a and the ground layer 24 through the pattern conductor 51A and the via conductor 52A. 【0077】 The wiring conductor 5A is connected to the portion of the first conductor portion 4a other than the ends 43A and 44A. In Embodiment 3, the wiring conductor 5A is connected to the central portion 45A of the first conductor portion 4a. Specifically, the pattern conductor 51A is connected to the central portion 45A of the first conductor portion 4a. 【0078】 The wiring conductor 5B connects the second conductor section 4b and the ground layer 24. The wiring conductor 5B comprises a pattern conductor 51B and a via conductor 52B. The pattern conductor 51B is connected to the second conductor section 4b. The via conductor 52B is connected to the pattern conductor 51B and the ground layer 24. The wiring conductor 5B connects the second conductor section 4b and the ground layer 24 through the pattern conductor 51B and the via conductor 52B. 【0079】 The wiring conductor 5B is connected to the portion of the second conductor portion 4b other than the ends 43B and 44B. In Embodiment 3, the wiring conductor 5B is connected to the central portion 45B of the second conductor portion 4b. Specifically, the pattern conductor 51B is connected to the central portion 45B of the second conductor portion 4b. 【0080】 Table 3 shows the average temperature and inductor characteristics of the inductors in Embodiment 3, Comparative Example 1, Comparative Example 2, and Comparative Example 3. Comparative Example 1 is the case where no conductor and wiring conductor are provided. Comparative Example 2 is the case where the conductor is a closed circuit. Comparative Example 3 is the case where the conductor and wiring conductor are not connected. 【0081】 【0082】In Embodiment 3, the average temperature of the inductor 3 is lower compared to cases where no conductor and wiring conductor are provided (Comparative Example 1) and cases where the conductor and wiring conductor are not connected (Comparative Example 3). Furthermore, in Embodiment 3, the degradation of the L value (inductance) and Q value of the inductor 3 can be reduced compared to cases where the conductor is a closed circuit (Comparative Example 2) and cases where the conductor and wiring conductor are not connected (Comparative Example 3). 【0083】 (2) The high-frequency module 1 according to the third embodiment further comprises a plurality of wiring conductors 5. The plurality of wiring conductors 5 include the wiring conductors 5 and are connected to the conductor 4. 【0084】 According to the high-frequency module 1 of Embodiment 3, the transfer of heat from the conductor 4 to the multiple wiring conductors 5 can be greatly increased, thereby further improving heat dissipation. 【0085】 In the high-frequency module 1 according to Embodiment 3, the conductor 4 has a plurality of open circuits (first conductor portion 4a, second conductor portion 4b). 【0086】 According to the high-frequency module 1 of Embodiment 3, the generation of eddy currents in the conductor 4 can be further reduced. As a result, it is possible to improve the inductor characteristics of the inductor 3. 【0087】 (Embodiment 4) The high-frequency module 1 according to Embodiment 4 differs from the high-frequency module 1 according to Embodiment 1 (see Figure 3) in that the distance L2 between the conductor 4 and the inductor 3 is longer, as shown in Figures 11 and 12. Regarding the high-frequency module 1 according to Embodiment 4, components similar to those in the high-frequency module 1 according to Embodiment 1 are denoted by the same reference numerals and their descriptions are omitted. 【0088】 (1) The high-frequency module 1 according to the configuration embodiment 4 comprises a mounting board 2, an inductor 3, a conductor 4, and a wiring conductor 5, as shown in Figures 11 and 12. 【0089】In the conductor 4 of Embodiment 4, the distance L2 between the conductor 4 and the inductor 3 is long. More specifically, the distance L2 between the conductor 4 and the inductor 3 in Embodiment 4 is longer than the distance L1 between the conductor 4 and the inductor 3 in Embodiment 1 (see Figure 3). Regarding the conductor 4 of Embodiment 4, the same configuration and function as the conductor 4 of Embodiment 1 (see Figure 3) will not be described. 【0090】 In Embodiment 4, since the conductor 4 is separated from the inductor 3, the decrease in the Q value of the inductor 3 can be reduced. 【0091】 Table 4 shows the average temperature and inductor characteristics of the inductors in Embodiment 4, Comparative Example 1, Comparative Example 2, and Comparative Example 3. Comparative Example 1 is the case where no conductor and wiring conductor are provided. Comparative Example 2 is the case where the conductor is a closed circuit. Comparative Example 3 is the case where the conductor and wiring conductor are not connected. 【0092】 【0093】 In Embodiment 4, the average temperature of the inductor 3 is lower compared to cases where no conductor and wiring conductor are provided (Comparative Example 1) and cases where the conductor and wiring conductor are not connected (Comparative Example 3). Furthermore, in Embodiment 4, the degradation of the L value (inductance) and Q value of the inductor 3 can be reduced compared to cases where the conductor is a closed circuit (Comparative Example 2) and cases where the conductor and wiring conductor are not connected (Comparative Example 3). 【0094】 (2) Effect: In the high-frequency module 1 according to Embodiment 4, similar to the high-frequency module 1 according to Embodiment 1, it is possible to reduce the degradation of the inductor characteristics of the inductor 3 and improve heat dissipation. 【0095】 (Embodiment 5) The high-frequency module 1 according to Embodiment 5 differs from the high-frequency module 1 according to Embodiment 3 (see Figure 10) in that the wiring conductor 5 is not connected to ground (ground layer 24), as shown in Figures 13 and 14. Regarding the high-frequency module 1 according to Embodiment 5, components similar to those in the high-frequency module 1 according to Embodiment 3 are denoted by the same reference numerals and their descriptions are omitted. 【0096】(1) The high-frequency module 1 according to the configuration embodiment 5 comprises a mounting board 2, an inductor 3, a conductor 4, and a plurality of (two in the example of Figure 13) wiring conductors 5, as shown in Figures 13 and 14. 【0097】 Each of the multiple wiring conductors 5 in Embodiment 5 faces the ground layer 24 (ground) in the thickness direction D1 of the mounting substrate 2. Each wiring conductor 5 in Embodiment 5 is not connected to the ground layer 24. A gap 47 is provided between each wiring conductor 5 and the ground layer 24 in Embodiment 5. Regarding each wiring conductor 5 in Embodiment 5, the same configuration and function as the wiring conductor 5 in Embodiment 3 (see Figure 10) will not be described. 【0098】 Table 5 shows the average temperature and inductor characteristics of the inductors in Embodiment 5, Comparative Example 1, and Comparative Example 2. Comparative Example 1 is the case where no conductor or wiring conductor is provided. Comparative Example 2 is the case where the conductor is a closed circuit. 【0099】 【0100】 In Embodiment 5, the average temperature of the inductor 3 is lower compared to the case where no conductor and wiring conductor are provided (Comparative Example 1). Furthermore, in Embodiment 5, the degradation of the L value (inductance) and Q value of the inductor 3 can be reduced compared to the case where the conductor is a closed circuit (Comparative Example 2). 【0101】 (2) In the high-frequency module 1 according to the effect embodiment 5, each wiring conductor 5 faces the ground layer 24 (ground) in the thickness direction D1 of the mounting substrate 2. 【0102】 According to the high-frequency module 1 of Embodiment 5, the bridging capacitance between the inductor 3 and the ground layer 24 (ground) can be reduced, making it possible to further improve the inductor characteristics of the inductor 3. 【0103】(Embodiment 6) The high-frequency module 1 according to Embodiment 6 differs from the high-frequency module according to Embodiment 3 (see Figure 8) in that, as shown in Figures 15 to 17, only a portion of the inductor 3 overlaps with the conductor 4. Regarding the high-frequency module 1 according to Embodiment 6, components similar to those in the high-frequency module 1 according to Embodiment 3 are denoted by the same reference numerals and their descriptions are omitted. 【0104】 (1) The high-frequency module 1 according to the configuration embodiment 6 comprises a mounting board 2, an inductor 3, a conductor 4, and a wiring conductor 5, as shown in Figures 15 to 17. 【0105】 In Embodiment 6, the conductor 4 overlaps with only a portion of the inductor 3 in the thickness direction D1 of the mounting substrate 2. Regarding the conductor 4 of Embodiment 6, the same configuration and function as the conductor 4 of Embodiment 3 (see Figure 8) will not be described. 【0106】 Table 6 shows the average temperature and inductor characteristics of the inductors in Embodiment 6, Comparative Example 1, and Comparative Example 2. Comparative Example 1 is the case where no conductor or wiring conductor is provided. Comparative Example 2 is the case where the conductor is a closed circuit. 【0107】 【0108】 In Embodiment 6, the average temperature of the inductor 3 is lower compared to the case where no conductor and wiring conductor are provided (Comparative Example 1). Furthermore, in Embodiment 6, the degradation of the L value (inductance) and Q value of the inductor 3 can be reduced compared to the case where the conductor is a closed circuit (Comparative Example 2). 【0109】 (2) Effect: In the high-frequency module 1 according to Embodiment 6, similar to the high-frequency module 1 according to Embodiment 3, it is possible to reduce the deterioration of the inductor characteristics of the inductor 3 and improve heat dissipation. 【0110】(Embodiment 7) The high-frequency module 1 according to Embodiment 7 differs from the high-frequency module 1 according to Embodiment 1 (see Figure 1) in that the width W12 of the conductor 4 is narrower than the width W31 of the inductor 3, as shown in Figure 19. Regarding the high-frequency module 1 according to Embodiment 7, components similar to those in the high-frequency module 1 according to Embodiment 1 are denoted by the same reference numerals and their descriptions are omitted. 【0111】 (1) The high-frequency module 1 according to the 7th embodiment of the configuration comprises a mounting board 2, an inductor 3, a conductor 4, and a wiring conductor 5, as shown in Figures 18 and 19. 【0112】 As shown in Figure 19, the width W12 of the conductor 4 in Embodiment 7 is narrower than the width W31 of the inductor 3 in a plan view from the thickness direction D1 of the mounting substrate 2. Regarding the conductor 4 in Embodiment 7, the same configuration and function as the conductor 4 in Embodiment 1 (see Figure 1) will not be described. 【0113】 The width W22 of the pattern conductor 51 of the wiring conductor 5 in Embodiment 7 is the same as, for example, the width W12 of the conductor 4 when viewed from a plan view from the thickness direction D1 of the mounting substrate 2. Regarding the wiring conductor 5 of Embodiment 7, the same configuration and function as the wiring conductor 5 of Embodiment 1 (see Figure 1) will not be described. 【0114】 Table 7 shows the average temperature and inductor characteristics of the inductors in Embodiment 7, Comparative Example 1, Comparative Example 2, and Comparative Example 3. Comparative Example 1 is the case where no conductor and wiring conductor are provided. Comparative Example 2 is the case where the conductor is a closed circuit. Comparative Example 3 is the case where the conductor and wiring conductor are not connected. 【0115】 【0116】 In Embodiment 7, the average temperature of the inductor 3 is lower compared to cases where no conductor and wiring conductor are provided (Comparative Example 1) and cases where the conductor and wiring conductor are not connected (Comparative Example 3). Furthermore, in Embodiment 7, the degradation of the L value (inductance) and Q value of the inductor 3 can be reduced compared to cases where the conductor is a closed circuit (Comparative Example 2) and cases where the conductor and wiring conductor are not connected (Comparative Example 3). 【0117】(2) In the high-frequency module 1 according to the effect embodiment 7, the width W12 of the conductor 4 is narrower than the width W31 of the inductor 3 when viewed in plan from the thickness direction D1 of the mounting substrate 2. 【0118】 According to the high-frequency module 1 of Embodiment 7, the influence of the conductor 4 on the magnetic flux φ1 (see Figure 4) of the inductor 3 can be reduced, making it possible to further improve the inductor characteristics of the inductor 3. 【0119】 (Embodiment 8) The high-frequency module 1 according to Embodiment 8 differs from the high-frequency module 1 according to Embodiment 1 (see Figure 1) in that the width W13 of the conductor 4 is wider than the width W31 of the inductor 3, as shown in Figure 21. Regarding the high-frequency module 1 according to Embodiment 8, components similar to those in the high-frequency module 1 according to Embodiment 1 are denoted by the same reference numerals and their descriptions are omitted. 【0120】 (1) The high-frequency module 1 according to the configuration embodiment 8 comprises a mounting board 2, an inductor 3, a conductor 4, and a wiring conductor 5, as shown in Figures 20 and 21. 【0121】 As shown in Figure 21, the width W13 of the conductor 4 in Embodiment 8 is wider than the width W31 of the inductor 3 in a plan view from the thickness direction D1 of the mounting substrate 2. Regarding the conductor 4 in Embodiment 8, the same configuration and function as the conductor 4 in Embodiment 1 (see Figure 1) will not be described. 【0122】 The width W23 of the pattern conductor 51 of the wiring conductor 5 in Embodiment 8 is the same as, for example, the width W31 of the inductor 3 when viewed from a plan view from the thickness direction D1 of the mounting substrate 2. Regarding the wiring conductor 5 of Embodiment 8, the same configuration and function as the wiring conductor 5 of Embodiment 1 (see Figure 1) will not be described. 【0123】 Table 8 shows the average temperature and inductor characteristics of the inductors in Embodiment 8, Comparative Example 1, Comparative Example 2, and Comparative Example 3. Comparative Example 1 is the case where no conductor and wiring conductor are provided. Comparative Example 2 is the case where the conductor is a closed circuit. Comparative Example 3 is the case where the conductor and wiring conductor are not connected. 【0124】 【0125】 In Embodiment 8, the average temperature of the inductor 3 is lower compared to cases where no conductor and wiring conductor are provided (Comparative Example 1) and cases where the conductor and wiring conductor are not connected (Comparative Example 3). Furthermore, in Embodiment 8, the degradation of the L value (inductance) and Q value of the inductor 3 can be reduced compared to cases where the conductor is a closed circuit (Comparative Example 2) and cases where the conductor and wiring conductor are not connected (Comparative Example 3). 【0126】 (2) In the high-frequency module 1 according to the effect embodiment 8, the width W13 of the conductor 4 is wider than the width W31 of the inductor 3 when viewed in plan from the thickness direction D1 of the mounting substrate 2. 【0127】 According to the high-frequency module 1 of Embodiment 8, heat dissipation can be improved, thereby reducing the temperature of the inductor 3. As a result, it is possible to further improve the inductor characteristics of the inductor 3 and further improve heat dissipation. 【0128】 (Embodiment 9) The high-frequency module 1 according to Embodiment 9 differs from the high-frequency module according to Embodiment 1 (see Figure 1) in that the inductor 3 is not connected to the ground layer 24, as shown in Figures 22 and 23. Regarding the high-frequency module 1 according to Embodiment 9, components similar to those in the high-frequency module 1 according to Embodiment 1 are denoted by the same reference numerals and their descriptions are omitted. 【0129】 (1) The high-frequency module 1 according to the configuration embodiment 9 comprises a mounting board 2, an inductor 3, a conductor 4, and a wiring conductor 5, as shown in Figures 22 and 23. 【0130】 The inductor 3 of Embodiment 9 has a plurality of pattern conductors 31 to 33, a plurality of via conductors 34 to 36, and pattern wiring sections 37 and 39. Regarding the inductor 3 of Embodiment 9, the same configuration and function as the inductor 3 of Embodiment 1 (see Figure 3) will not be described. 【0131】 In Embodiment 9, the inductor 3 is not connected to the ground layer 24 (ground). In Embodiment 9, there is a space 38 between the inductor 3 and the ground layer 24. 【0132】 Table 9 shows the average temperature and inductor characteristics of the inductors in Embodiment 9, Comparative Example 4, and Comparative Example 5. Comparative Example 4 is the case where no conductor and wiring conductor are provided. Comparative Example 5 is the case where the conductor is a closed circuit. 【0133】 【0134】 In Embodiment 9, the average temperature of the inductor 3 is lower compared to the case where no conductor and wiring conductor are provided (Comparative Example 4). Furthermore, in Embodiment 9, the degradation of the L value (inductance) and Q value of the inductor 3 can be reduced compared to the case where the conductor is a closed circuit (Comparative Example 5). 【0135】 (2) Effect: In the high-frequency module 1 according to Embodiment 9, similar to the high-frequency module 1 according to Embodiment 1, it is possible to reduce the degradation of the inductor characteristics of the inductor 3 and improve heat dissipation. 【0136】 (3) A modified example of the modified embodiment 9 will be described. 【0137】 In the modified high-frequency module 1 of Embodiment 9, as shown in Figures 24 and 25, the inductor 3 is not connected to the ground layer 24. 【0138】 The high-frequency module 1 according to the above modified example also provides the same effects as the high-frequency module 1 according to Embodiment 9. 【0139】 (Embodiment 10) The high-frequency module 1 according to Embodiment 10 differs from the high-frequency module 1 according to Embodiment 1 (see Figure 1) in that the conductor 4 has a plurality of pattern layers 4A, 4B, as shown in Figures 26 and 27. Regarding the high-frequency module 1 according to Embodiment 10, components similar to those in the high-frequency module 1 according to Embodiment 1 are denoted by the same reference numerals and their descriptions are omitted. 【0140】 (1) The high-frequency module 1 according to the configuration embodiment 10 comprises a mounting board 2, an inductor 3, a conductor 4, and a wiring conductor 5, as shown in Figures 26 and 27. 【0141】As shown in Figures 26 and 27, the conductor 4 of Embodiment 10 has a plurality of pattern layers 4A and 4B. The plurality of pattern layers 4A and 4B are arranged at different positions in the thickness direction D1 of the mounting substrate 2. Regarding the conductor 4 of Embodiment 10, the same configuration and function as the conductor 4 of Embodiment 1 (see Figure 1) will not be described. 【0142】 (2) In the high-frequency module 1 according to the effect embodiment 10, the conductor 4 has a plurality of pattern layers 4A, 4B. The plurality of pattern layers 4A, 4B are arranged at different positions in the thickness direction D1 of the mounting substrate 2. 【0143】 According to the high-frequency module 1 of Embodiment 10, the inductor characteristics of the inductor 3 can be further improved, and the heat dissipation can be further improved. 【0144】 (3) Modifications of the modified embodiment 10 will be described. 【0145】 The conductor 4 of the high-frequency module 1 according to a modified embodiment of embodiment 10 has multiple pattern layers 4C, 4D as shown in Figure 28, instead of multiple pattern layers 4A, 4B. 【0146】 Multiple pattern layers 4C and 4D are located in the thickness direction D1 of the mounting substrate 2, on the opposite side of the ground layer 24 from the inductor 3. 【0147】 In the high-frequency module 1 according to a modified example of Embodiment 10, it is also possible to improve the inductor characteristics of the inductor 3. 【0148】 The high-frequency module 1 according to the above modified example also provides the same effects as the high-frequency module 1 according to Embodiment 10. 【0149】 (Embodiment 11) The high-frequency module 1 according to Embodiment 11 differs from the high-frequency module 1 according to Embodiment 1 (see Figure 1) in that the conductor 4 has a plurality of via conductors 48, as shown in Figures 29 and 30. Regarding the high-frequency module 1 according to Embodiment 11, components similar to those in the high-frequency module 1 according to Embodiment 1 are denoted by the same reference numerals and their descriptions are omitted. 【0150】 (1) The high-frequency module 1 according to the configuration embodiment 11 comprises a mounting board 2, an inductor 3, a conductor 4, and a wiring conductor 5, as shown in Figures 29 and 30. 【0151】 As shown in Figures 29 and 30, the conductor 4 of Embodiment 11 has a pattern conductor 42 (wiring section) and a plurality of via conductors 48 (six in the example of Figure 29). The plurality of via conductors 48 are connected to the pattern conductor 42. Each via conductor 48 is a protruding conductor that protrudes from the pattern conductor 42. Regarding the conductor 4 of Embodiment 11, the same configuration and function as the conductor 4 of Embodiment 1 (see Figure 1) will not be described. 【0152】 Multiple via conductors 48 are provided on the inductor 3 side of the pattern conductor 42 in the thickness direction D1 of the mounting substrate 2. In other words, multiple via conductors 48 are provided protruding from the pattern conductor 42 toward the inductor 3 side in the thickness direction D1 of the mounting substrate 2. 【0153】 In embodiment 11, the surface area of ​​the conductor 4 can be increased compared to the case where the conductor 4 does not have a via conductor 48. 【0154】 (2) In the high-frequency module 1 according to the effect embodiment 11, the conductor 4 has a pattern conductor 42 (wiring section) and a plurality of via conductors 48. The plurality of via conductors 48 are connected to the pattern conductor 42. 【0155】 According to the high-frequency module 1 of Embodiment 11, the surface area of ​​the conductor 4 can be increased by providing a plurality of via conductors 48, thereby further improving heat dissipation. As a result, the inductor characteristics of the inductor 3 can be further improved. 【0156】 (3) A modified example of the modified embodiment 11 will be described. 【0157】(3.1) Modification 1 In the high-frequency module 1 according to Modification 1 of Embodiment 11, the conductor 4 has a plurality of via conductors 48 (six in the example of Figure 31) as shown in Figures 31 and 32. The plurality of via conductors 48 are provided on the opposite side of the inductor 3 from the pattern conductor 42 in the thickness direction D1 of the mounting substrate 2. In other words, the plurality of via conductors 48 are provided protruding from the pattern conductor 42 on the opposite side of the inductor 3 in the thickness direction D1 of the mounting substrate 2. Each via conductor 48 is a protruding conductor. 【0158】 In the modified example 1, as in embodiment 11, the surface area of ​​the conductor 4 can be increased compared to the case where the conductor 4 does not have a via conductor 48. 【0159】 (3.2) Modification 2 In the high-frequency module 1 according to Modification 2 of Embodiment 11, the conductor 4 has a plurality of via conductors 48 (six in the example of Figure 33) and a plurality of pattern layers 4E, 4F (wiring sections) (two in the example of Figure 33), as shown in Figures 33 and 34. The plurality of via conductors 48 are connected to the plurality of pattern layers 4E, 4F. The plurality of via conductors 48 connect the pattern layer 4E and the pattern layer 4F. Each via conductor 48 is a protruding conductor. 【0160】 In the modified example 2, as in embodiment 11, the surface area of ​​the conductor 4 can be increased compared to the case where the conductor 4 does not have a via conductor 48. 【0161】 (3.3) Modification 3 As a third modification of Embodiment 11, the number of via conductors 48 of the conductor 4 is not limited to multiple numbers, but may be one. 【0162】 In the modified example 3, as in embodiment 11, the surface area of ​​the conductor 4 can be increased compared to the case where the conductor 4 does not have a via conductor 48. 【0163】 The high-frequency module 1 according to each of the above modified examples also provides the same effects as the high-frequency module 1 according to Embodiment 11. 【0164】 (Embodiment 12) In Embodiment 12, a communication device 6 equipped with a high-frequency module 1 will be described with reference to the drawings. 【0165】 (1) The communication device 6 according to the configuration embodiment 12 comprises a high-frequency module 1, an antenna 61, and a signal processing circuit 62, as shown in Figure 35. The communication device 6 is, for example, a mobile terminal (e.g., a smartphone). However, the communication device 6 is not limited to a mobile terminal, but may be, for example, a wearable device (e.g., a smartwatch). 【0166】 The high-frequency module 1 according to Embodiment 12 is a module having the same configuration as the high-frequency module 1 according to Embodiment 1. Regarding the high-frequency module 1 according to Embodiment 12, components that are the same as those in the high-frequency module 1 according to Embodiment 1 are denoted by the same reference numerals and their descriptions are omitted. 【0167】 The high-frequency module 1 is configured to amplify the transmission signal (high-frequency signal) from the signal processing circuit 62 and output it to the antenna 61. The high-frequency module 1 is also configured to amplify the received signal (high-frequency signal) received by the antenna 61 and output it to the signal processing circuit 62. The high-frequency module 1 is controlled, for example, by the signal processing circuit 62. 【0168】 The high-frequency module 1 is a module that supports, for example, 4G (fourth-generation mobile communication) standards and 5G (fifth-generation mobile communication) standards. The 4G standard is, for example, the 3GPP (registered trademark, Third Generation Partnership Project) LTE (registered trademark, Long Term Evolution) standard. The 5G standard is, for example, 5G NR (New Radio). The high-frequency module 1 is a module that supports carrier aggregation and dual connectivity. 【0169】In the communication device 6, the high-frequency module 1 is electrically connectable to an external circuit board (not shown). The external circuit board corresponds to, for example, the motherboard of a mobile terminal or communication device. The statement that the high-frequency module 1 is electrically connectable to the external circuit board includes not only cases where the high-frequency module 1 is directly mounted on the external circuit board, but also cases where the high-frequency module 1 is indirectly mounted on the external circuit board. Furthermore, cases where the high-frequency module 1 is indirectly mounted on the external circuit board include cases where the high-frequency module 1 is mounted on another high-frequency module mounted on the external circuit board. 【0170】 (1.1) Antenna The antenna 61 shown in Figure 35 is connected to the antenna terminal (not shown) of the high-frequency module 1. The antenna 61 has a transmitting function that radiates the transmission signal output from the high-frequency module 1 as radio waves, and a receiving function that receives the reception signal as radio waves from the outside and outputs it to the high-frequency module 1. 【0171】 (1.2) Signal Processing Circuit The signal processing circuit 62 is connected to the high-frequency module 1 as shown in Figure 35. The signal processing circuit 62 processes the high-frequency signals passing through the high-frequency module 1. More specifically, the signal processing circuit 62 is configured to process the received signals received from the high-frequency module 1. The signal processing circuit 62 is also configured to process the transmitted signals output to the high-frequency module 1. 【0172】 The signal processing circuit 62 includes a baseband signal processing circuit 63 and an RF signal processing circuit 64. 【0173】 The baseband signal processing circuit 63 is, for example, a BBIC (Baseband Integrated Circuit). 【0174】 The baseband signal processing circuit 63 performs predetermined signal processing on signals from outside the signal processing circuit 62. More specifically, the baseband signal processing circuit 63 generates a transmission signal from baseband signals (e.g., audio signals and image signals) from outside the signal processing circuit 62, and outputs the generated transmission signal to the RF signal processing circuit 64. 【0175】The baseband signal processing circuit 63 performs predetermined signal processing on the signal from the RF signal processing circuit 64. More specifically, the baseband signal processing circuit 63 outputs the received signal received from the RF signal processing circuit 64 to the outside. The received signal processed by the baseband signal processing circuit 63 is used, for example, as an image signal for image display or as an audio signal for telephone communication. 【0176】 The RF signal processing circuit 64 is, for example, an RFIC (Radio Frequency Integrated Circuit) and performs signal processing on high-frequency signals (transmitted signals and received signals). 【0177】 The RF signal processing circuit 64 performs signal processing on the transmission signal output from the baseband signal processing circuit 63 and outputs the processed transmission signal to the high-frequency module 1. Specifically, the RF signal processing circuit 64 performs signal processing such as upconversion on the transmission signal output from the baseband signal processing circuit 63 and outputs the processed transmission signal to the transmission path of the high-frequency module 1. 【0178】 The RF signal processing circuit 64 performs signal processing on the received signal output from the high-frequency module 1 and outputs the processed received signal to the baseband signal processing circuit 63. Specifically, the RF signal processing circuit 64 performs signal processing such as down-conversion on the received signal output from the receiving path of the high-frequency module 1 and outputs the processed received signal to the baseband signal processing circuit 63. 【0179】 (2) The communication device 6 according to the effect embodiment 12 comprises a high-frequency module 1 and a signal processing circuit 62. The signal processing circuit 62 is connected to the high-frequency module 1. 【0180】According to the communication device 6 of Embodiment 12, in the high-frequency module 1, heat from the inductor 3 can be dissipated to the wiring conductor 5 by the conductor 4, thereby lowering the temperature of the inductor 3. Furthermore, since the conductor 4 has an open circuit, the generation of eddy currents due to the magnetic flux φ1 of the inductor 3 in the conductor 4 can be reduced. As a result, it is possible to reduce the deterioration of the inductor characteristics of the inductor 3 and improve heat dissipation. 【0181】 (3) Modifications Below, modifications of Embodiment 12 will be described. 【0182】 The communication device 6 according to a modified example of Embodiment 12 may include any of the high-frequency modules 1 according to Embodiments 2 to 11 instead of the high-frequency module 1 according to Embodiment 1. 【0183】 The communication device 6 according to the above modified example also provides the same effects as the communication device 6 according to Embodiment 12. 【0184】 (Modifications of Embodiments 1 to 12) As a modification of Embodiments 1 to 12, in the high-frequency module 1, the inductor 3 is not entirely embedded in the mounting board 2, but a portion of it may be exposed from the mounting board 2. A portion of the inductor 3 may be arranged, for example, on the first main surface 21 of the mounting board 2. Alternatively, a portion of the inductor 3 may be arranged, for example, on the second main surface 22 of the mounting board 2. 【0185】 As a variation of Embodiments 1 to 12, in the high-frequency module 1, the conductor 4 may be exposed from the mounting substrate 2 instead of being embedded in the mounting substrate 2. The conductor 4 may be arranged, for example, on the first main surface 21 of the mounting substrate 2. Alternatively, the conductor 4 may be arranged, for example, on the second main surface 22 of the mounting substrate 2. 【0186】 The embodiments and modifications described above are only a part of the various embodiments and modifications of the present invention. Furthermore, the embodiments and modifications can be modified in various ways depending on the design, etc., as long as the objectives of the present invention are achieved. 【0187】1 High-frequency module 2 Mounting board 21 First main surface 22 Second main surface 23 Dielectric layer 24 Ground layer (Ground) 3 Inductor 31, 32, 33 Pattern conductors 34, 35, 36 Via conductors 37 Pattern wiring section 38 Space 39 Pattern wiring section 4 Conductor 4a First conductor section (open circuit) 4b Second conductor section (open circuit) 4A, 4B, 4C, 4D Pattern layer 4E, 4F Pattern layer (wiring section) 41, 41A, 41B Gap 42 Pattern conductor (wiring section) 43, 44 Ends 45, 45A, 45B Center section (parts other than ends) 46 Space 47 Gap 48 Via conductor 49 Outer edge 5, 5A, 5B Wiring conductors 51, 51A, 51B Pattern conductor 52, 52A, 52B Via conductor 6 Communication device 61 Antenna 62 Signal processing circuit 63 Baseband signal processing circuit 64 RF signal processing circuit φ1 Magnetic flux W11, W12, W13 Width W21, W22, W23 Width W31 Width L1, L2 Distance D1 Thickness direction D21 First direction D22 Second direction

Claims

1. A high-frequency module comprising: a mounting board; an inductor embedded in the mounting board; a conductor overlapping the inductor in a plan view from the thickness direction of the mounting board; and a wiring conductor connected to the conductor, wherein the conductor has an open circuit.

2. The high-frequency module according to claim 1, wherein the wiring conductor is connected to the outer edge of the conductor.

3. The high-frequency module according to claim 1 or 2, wherein the wiring conductor is connected to a portion of the conductor other than the end portion.

4. The high-frequency module according to claim 3, wherein the wiring conductor is connected to the central part of the conductor.

5. The high-frequency module according to any one of claims 1 to 4, wherein the wiring conductor is connected to ground.

6. The high-frequency module according to any one of claims 1 to 4, wherein the wiring conductor faces the ground in the thickness direction of the mounting substrate.

7. A high-frequency module according to any one of claims 1 to 6, further comprising a plurality of wiring conductors, the wiring conductor and the plurality of wiring conductors connected to the wiring conductor.

8. The high-frequency module according to any one of claims 1 to 7, wherein the conductor has a plurality of open circuits, including the open circuit.

9. The high-frequency module according to any one of claims 1 to 8, wherein the width of the conductor is narrower than the width of the inductor when viewed in a plan view from the thickness direction of the mounting substrate.

10. The high-frequency module according to any one of claims 1 to 8, wherein the width of the conductor is wider than the width of the inductor when viewed in a plan view from the thickness direction of the mounting substrate.

11. The high-frequency module according to any one of claims 1 to 10, wherein the conductor has a plurality of pattern layers arranged at mutually different positions in the thickness direction of the mounting substrate.

12. The high-frequency module according to claim 11, wherein the plurality of pattern layers are located on the opposite side of the inductor from ground in the thickness direction of the mounting substrate.

13. The high-frequency module according to any one of claims 1 to 12, wherein the conductor comprises a wiring section and a via conductor connected to the wiring section.

14. The high-frequency module according to any one of claims 1 to 13, wherein the inductor is connected to ground.

15. The high-frequency module according to any one of claims 1 to 13, wherein the inductor is not connected to ground.

16. A communication device comprising a high-frequency module according to any one of claims 1 to 15, and a signal processing circuit connected to the high-frequency module.

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