Semiconductor device
The semiconductor device's frame-shaped resin frame with integrated control terminals and support portions addresses resin leakage during transfer molding, enabling miniaturization and reduced inductance by ensuring secure mold contact, thus enhancing sealing and accuracy.
Patent Information
- Authority / Receiving Office
- WO · WO
- Patent Type
- Applications
- Current Assignee / Owner
- FUJI ELECTRIC CO LTD
- Filing Date
- 2025-11-12
- Publication Date
- 2026-06-18
Smart Images
Figure JP2025039660_18062026_PF_FP_ABST
Abstract
Description
Semiconductor equipment 【0001】 This disclosure relates to semiconductor devices (power semiconductor modules). 【0002】 Patent Document 1 discloses a semiconductor device in which a plurality of terminal holding portions are formed in the outer resin case in a circumferential direction, each holding an external terminal by an inner wall surface, a side edge restricting portion, an inner surface restricting portion, and a lower surface support portion, and an external terminal inserted into the terminal holding portion from the upper end of the outer resin case toward the semiconductor chip mounting substrate is received while being held immovably in two orthogonal axis directions parallel to the semiconductor chip mounting substrate by the terminal holding portion, and the terminal holding portion and terminal holding portion are configured such that the terminal holding portion supports the lower surface of the internal connection portion at a predetermined position, and a terminal locking member is fixed to the upper end of the outer resin case to hold the external terminal held in the terminal holding portion so that it does not come loose. 【0003】 Patent Document 2 discloses a semiconductor device comprising a substrate having a circuit pattern on its surface, a semiconductor element fixed to the circuit pattern, a cylindrical electrode having an open surface at one end and fixed to the circuit pattern at the other end, standing upright relative to the substrate, and having a portion in which the inner diameter is larger than that of the other portion, and a resin housing that covers the substrate, the semiconductor element, and the cylindrical electrode such that the back surface of the substrate and one end of the cylindrical electrode are exposed to the outside. 【0004】 Patent Document 3 discloses a power module comprising an insulating substrate, a power semiconductor element disposed on the insulating substrate, a plurality of hollow cylindrical sockets disposed on the insulating substrate, and a resin housing formed to cover the power semiconductor element and the plurality of hollow cylindrical sockets, wherein the plurality of hollow cylindrical sockets are exposed from the plurality of recesses such that one hollow cylindrical socket of the plurality of hollow cylindrical sockets is exposed from one recess of the plurality of recesses. 【0005】 Japanese Patent Publication No. 2017-126682, Japanese Patent Publication No. 2010-186953, Japanese Patent Publication No. 2011-187819 【0006】To miniaturize and reduce the inductance of power semiconductor modules, a resin frame with integrated control terminals is being considered, which is placed around the semiconductor chip and then sealed with resin by transfer molding. However, during transfer molding, the sealing ability of the resin to the control terminal side may not be maintained, potentially leading to resin leakage. 【0007】 In view of the above issues, this disclosure aims to provide a semiconductor device that can prevent resin leakage during transfer molding. 【0008】 One aspect of the present disclosure is a semiconductor device comprising: a plurality of semiconductor chips; a frame-shaped resin frame provided above the plurality of semiconductor chips and having a first opening in the center of its upper surface; a first control terminal protruding vertically from the upper and lower surfaces of the first side of the resin frame and electrically connected to any one of the plurality of semiconductor chips; external terminals arranged on the second and third sides perpendicular to the first side of the resin frame, respectively, with the upper surface of one end exposed from the upper surface of the resin frame and the other end extending to the first opening and electrically connected to any one of the plurality of semiconductor chips; and a sealing resin embedded below the resin frame and in the first opening, wherein the resin frame comprises a first support portion extending downward from the first side adjacent to the first control terminal. 【0009】 In one embodiment of the present disclosure, a first support portion and a second opening are provided on the side surface of the first edge of the resin frame, the lower end of the first support portion may form part of the bottom surface of the semiconductor device, and the second opening may be filled with sealing resin. 【0010】 In one embodiment of the present disclosure, the cross-section of the portion of the first side adjacent to the first control terminal may be in the shape of an inverted L, and the upper surface of the first side at the base of the first control terminal may be raised upward. 【0011】 In one embodiment of this disclosure, the resin of the resin frame may have a higher melting point than the sealing resin. 【0012】 In one embodiment of the present disclosure, a wiring board may be provided on the lower side of the first opening of the resin frame and electrically connected to the first control terminal. 【0013】In one embodiment of the present disclosure, an insulating circuit board equipped with a plurality of semiconductor chips may be provided, and the sealing resin may seal the top and side surfaces of the insulating circuit board except for the bottom surface. 【0014】 In one embodiment of this disclosure, the wiring board may be electrically connected to each of a plurality of semiconductor chips. 【0015】 In one embodiment of the present disclosure, the resin frame has a fourth side opposite to the first side, the semiconductor device has a second control terminal that protrudes vertically from the upper and lower surfaces of the fourth side and is electrically connected to any one of a plurality of semiconductor chips, and the resin frame may have a second support portion that extends downward from the fourth side adjacent to the second control terminal. 【0016】 In one embodiment of the present disclosure, the cross-section of the portion of the fourth side adjacent to the second control terminal may be in the shape of an inverted L, and the upper surface of the fourth side at the base of the second control terminal may be raised upward. 【0017】 In one embodiment of this disclosure, the wiring board may be electrically connected to the second control terminal. 【0018】 In one embodiment of the present disclosure, the first support portion extends downward from the lower surface inward from the side surface of the first edge of the resin frame, and the lower end of the first support portion may be in contact with the upper surface of the insulating circuit board. 【0019】 In one embodiment of the present disclosure, the resin frame may include a beam portion connected to the lower part of the first support portion, extending parallel to the first side, and forming part of the bottom surface of the semiconductor device. 【0020】 It should be noted that the above summary of the invention does not enumerate all the features necessary for this disclosure. Furthermore, subcombinations of these features may also constitute an invention. 【0021】 According to this disclosure, it is possible to provide a semiconductor device that can prevent resin leakage during transfer molding. 【0022】This is a perspective view of a semiconductor device according to the first embodiment. This is a side view of a semiconductor device according to the first embodiment. This is a side view of a semiconductor device according to the first embodiment. This is a cross-sectional view of a semiconductor device according to the first embodiment. This is an equivalent circuit diagram of a semiconductor device according to the first embodiment. This is a perspective view of a component of a semiconductor device according to the first embodiment. This is a perspective view of a component of a semiconductor device according to the first embodiment. This is a cross-sectional view of a component and mold of a semiconductor device according to the first embodiment. This is an enlarged cross-sectional view of a part of Figure 8. This is a perspective view of a semiconductor device according to the second embodiment. This is a perspective view of a semiconductor device according to the third embodiment. This is a cross-sectional view of a semiconductor device according to the third embodiment. 【0023】 The first to third embodiments of this disclosure will be described below with reference to the drawings. In the drawings referred to in the following description, identical or similar parts are denoted by the same or similar reference numerals. However, it should be noted that the drawings are schematic, and the relationship between thickness and planar dimensions, the ratio of the thickness of each layer, etc., may differ from reality. Therefore, specific thicknesses and dimensions should be determined by referring to the following description. Furthermore, it goes without saying that there are parts where the relationships and ratios of dimensions differ between drawings. 【0024】 Furthermore, the definitions of directions such as "up," "down," "up and down," "left," "right," and "left and right" in the following explanation are merely for the convenience of explanation and do not limit the technical concept of this disclosure. For example, it is obvious that if an object is rotated 90° and observed, "up and down" will be converted to "left and right" and read accordingly, and if it is rotated 180° and observed, "up and down" will be reversed and read accordingly. 【0025】 Furthermore, in the following explanation, "top surface" may be read as "front surface," and "bottom surface" may be read as "back surface" or "bottom surface." Also, the "first main surface" and "second main surface" of each component are opposing main surfaces; for example, if the "first main surface" is the "top surface," then the "second main surface" is the "bottom surface." Furthermore, "first main surface" and "second main surface" may be read as "one main surface" and "the other main surface," respectively. 【0026】(First Embodiment) <Structure of Semiconductor Device> As an example of a semiconductor device (power semiconductor module) according to the first embodiment, a power semiconductor module that constitutes one phase of a three-level power converter (three-level inverter) circuit (three-level circuit) is provided. 【0027】 Figure 1 is a perspective view of a semiconductor device according to the first embodiment. The semiconductor device according to the first embodiment has a substantially rectangular parallelepiped shape. In Figure 1, the direction of the short side of the upper surface of the semiconductor device according to the first embodiment is defined as the X-axis direction, and the upper left direction in Figure 1 is defined as the positive direction of the X-axis. The direction perpendicular to the X-axis direction and the direction of the long side of the upper surface of the semiconductor device according to the first embodiment is defined as the Y-axis direction, and the lower left direction in Figure 1 is defined as the positive direction of the Y-axis. The direction perpendicular to both the X-axis and Y-axis directions is defined as the Z-axis direction, and the upward direction in Figure 1 is defined as the positive direction of the Z-axis. The directions and orientations of the X-axis, Y-axis, and Z-axis in Figures 2 and beyond are the same as in Figure 1. 【0028】 As shown in Figure 1, the semiconductor device according to the first embodiment includes a frame-shaped resin frame 1 having an opening 12 in the center of its upper surface. A sealing resin 9 is embedded in the lower part of the resin frame 1 and in the opening 12, with the sealing resin 9 exposed from the opening 12. The resin of the resin frame 1 has a higher melting point than the sealing resin 9. The resin frame 1 is made of an insulating resin such as polyphenylene sulfide (PPS). The sealing resin 9 is made of an insulating resin such as an epoxy resin. 【0029】 The resin frame 1 comprises a first side 11a, a second side 11b, a third side 11c, and a fourth side 11d that define the opening 12. The first side 11a and the fourth side 11d are the long sides of the resin frame 1 and extend parallel to each other, facing each other. The second side 11b and the third side 11c are the short sides of the resin frame 1 and extend parallel to each other, perpendicular to the first side 11a and the fourth side 11d. 【0030】Control terminals 6a to 6j are integrally provided on the resin frame 1. Control terminals 6a to 6e are provided on the first side 11a of the resin frame 1. Control terminals 6a to 6e protrude vertically from the upper and lower surfaces of the first side 11a of the resin frame 1. Control terminals 6f to 6j are provided on the fourth side 11d of the resin frame 1. Control terminals 6f to 6j protrude vertically from the upper and lower surfaces of the fourth side 11d of the resin frame 1. By integrating the control terminals 6a to 6j with the resin frame 1 and having them protrude from the upper side of the resin frame 1, miniaturization and low inductance can be achieved. 【0031】 The control terminals 6a to 6j are external terminals (external connection terminals) that can be connected to external components such as printed circuit boards. The control terminals 6a to 6j are electrically connected to at least one of a plurality of semiconductor chips provided below the resin frame 1. Each of the control terminals 6a to 6j may be electrically connected to one of the plurality of semiconductor chips, or may be electrically connected to multiple semiconductor chips. The control terminals 6a to 6j are made of a conductive material such as copper (Cu), Cu alloy, aluminum (Al), or Al alloy. Figure 1 illustrates a case where the control terminals 6a to 6j are made of press-fit pins, but the shape of the control terminals 6a to 6j is not particularly limited. Also, the arrangement position and number of the control terminals 6a to 6j are not particularly limited. The number of control terminals 6a to 6j on the first side 11a and the fourth side 11d may be the same or different. 【0032】 The upper surface of the first side 11a of the resin frame 1 located at the base of the control terminals 6a to 6e is raised upward, and projections 7a to 7e are provided on the raised portion. The upper surface of the fourth side 11d of the resin frame 1 located at the base of the control terminals 6f to 6j is raised upward, and projections 7f to 7j are provided on the raised portion. The projections 7a to 7f have the function of fixing the control terminals 6a to 6f to the resin frame 1. 【0033】The resin frame 1 is integrally provided with a positive terminal 2, a negative terminal 3, an intermediate terminal 4, and an output terminal 5. The positive terminal 2, negative terminal 3, intermediate terminal 4, and output terminal 5 are external terminals (external connection terminals) that can be connected to an external member. The positive terminal 2, negative terminal 3, intermediate terminal 4, and output terminal 5 are electrically connected to at least one of a plurality of semiconductor chips provided below the resin frame 1. Each of the positive terminal 2, negative terminal 3, intermediate terminal 4, and output terminal 5 may be electrically connected to one of the plurality of semiconductor chips, or may be electrically connected to multiple semiconductor chips. The positive terminal 2, negative terminal 3, intermediate terminal 4, and output terminal 5 are made of a conductive material such as copper (Cu), Cu alloy, aluminum (Al), or Al alloy. Note that the positive terminal 2, negative terminal 3, intermediate terminal 4, and output terminal 5 are not integral with the resin frame 1, but may be provided separately from the resin frame 1. 【0034】 A terminal arrangement section 13 is provided on the second side 11b of the resin frame 1. An output terminal 5 is arranged in the terminal arrangement section 13. The upper surface of the output terminal 5 is exposed from the upper surface of the resin frame 1. A terminal arrangement section 14 is provided on the third side 11c of the resin frame 1. A positive terminal 2, a negative terminal 3, and an intermediate terminal 4 are arranged in the terminal arrangement section 14. The upper surfaces of the positive terminal 2, the negative terminal 3, and the intermediate terminal 4 are exposed from the upper surface of the resin frame 1. The terminal arrangement section 14 is provided with recesses 14a and 14b for fastening to a cooling plate or the like with bolts. 【0035】 Figure 2 is a side view of a part of the semiconductor device according to the first embodiment shown in Figure 1, viewed in the positive direction of the X-axis. As shown in Figures 1 and 2, one end of the first side 11a that connects to the third side 11c is provided with a corner portion 20a that extends downward from the side surface of the first side 11a. One end of the first side 11a that connects to the second side 11b is provided with a corner portion 20b that extends downward from the side surface of the first side 11a. The lower ends of the corner portions 20a and 20b form a part of the bottom surface of the semiconductor device according to the first embodiment. 【0036】The resin frame 1 includes support portions 13a and 13b provided at portions adjacent to the control terminals 6a to 6e of the first side 11a. The support portions 13a and 13b extend downward from the side surface of the first side 11a. The lower ends of the support portions 13a and 13b form a part of the bottom surface of the semiconductor device according to the first embodiment. 【0037】 The support portion 13a is provided adjacent to the control terminals 6a to 6c. In the side view of FIG. 2, the support portion 13a is located directly below the control terminals 6a to 6c. The support portion 13a has a predetermined width W1, is spaced apart from the corner portion 20a by a predetermined interval S1, and is spaced apart from the support portion 13b by a predetermined interval S2. The width W1 and the intervals S1 and S2 can be set as appropriate. 【0038】 The support portion 13b is provided adjacent to the control terminals 6d and 6e. In the side view of FIG. 2, the support portion 13b is located directly below the control terminals 6d and 6e. The support portion 13b has a predetermined width W2 and is spaced apart from the corner portion 20b by a predetermined interval S3. The width W2 and the interval S3 can be set as appropriate. 【0039】 An opening 16a is provided between the support portion 13a and the corner portion 20a. An opening 16b is provided between the support portion 13a and the support portion 13b. An opening 16c is provided between the support portion 13b and the corner portion 20b. The sealing resin 9 is filled in the openings 16a to 16c, and the sealing resin 9 is exposed from the openings 16a to 16c. 【0040】 A beam portion 15 extending parallel to the first side 11a is provided on the side surface of the first side 11a of the resin frame 1. The beam portion 15 connects the upper portions of the corner portions 20a, 20b and the support portions 13a, 13b. 【0041】 In FIGS. 1 and 2, the case where two support portions 13a and 13b are provided on the first side 11a is illustrated, but the number of support portions provided on the first side 11a is not limited. Also, the case where three openings 16a to 16c are provided on the first side 11a is illustrated, but the number of openings provided on the first side 11a is not limited. Further, in the side view of FIG. 2, a support portion not located directly below the control terminals 6a to 6e may be provided, and there may be control terminals on the first side 11a side where the support portions 13a and 13b are not provided directly below. 【0042】 Figure 3 is a side view of a part of the semiconductor device according to the first embodiment shown in FIG. 1, as viewed in the negative direction of the X axis. As shown in FIGS. 1 and 3, at one end on the side connecting to the second side 11b of the fourth side 11d, a corner portion 20c extending downward from the side surface of the fourth side 11d is provided. At one end on the side connecting to the third side 11c of the fourth side 11d, a corner portion 20d extending downward from the side surface of the fourth side 11d is provided. The lower ends of the corner portions 20c and 20d form a part of the bottom surface of the semiconductor device according to the first embodiment. 【0043】 The resin frame 1 includes support portions 13c and 13d provided at portions adjacent to the control terminals 6f to 6j of the fourth side 11d. The support portions 13c and 13d extend downward from the side surface of the fourth side 11d. The lower ends of the support portions 13c and 13d form a part of the bottom surface of the semiconductor device according to the first embodiment. 【0044】 The support portion 13c is provided adjacent to the control terminals 6f to 6h. In the side view of FIG. 3, the support portion 13c is located directly below the control terminals 6f to 6h. The support portion 13c has a predetermined width W3, is separated from the corner portion 20c by a predetermined interval S4, and is separated from the support portion 13d by a predetermined interval S5. The width W3 and the intervals S4 and S5 can be set as appropriate. 【0045】 The support portion 13d is provided adjacent to the control terminals 6i and 6j. In the side view of FIG. 3, the support portion 13d is located directly below the control terminals 6i and 6j. The support portion 13d has a predetermined width W4 and is separated from the corner portion 20d by a predetermined interval S6. The width W4 and the interval S6 can be set as appropriate. 【0046】 An opening 16d is provided between the support portion 13c and the corner portion 20c. An opening 16e is provided between the support portion 13c and the support portion 13d. An opening 16f is provided between the support portion 13d and the corner portion 20d. The sealing resin 9 is filled in the openings 16d to 16f, and the sealing resin 9 is exposed from the openings 16d to 16f. 【0047】 A beam portion 17 extending parallel to the fourth side 11d is provided on the side surface of the fourth side 11d of the resin frame 1. The beam portion 17 connects the upper portions of the corner portions 20c, 20d and the support portions 13c, 13d. 【0048】 In Figures 1 and 3, an example is shown where two support parts 13c and 13d are provided on the fourth side 11d, but the number of support parts provided on the fourth side 11d is not limited. Also, an example is shown where three openings 16d to 16f are provided on the fourth side 11d, but the number of openings provided on the fourth side 11d is not limited. Furthermore, in the side view of Figure 3, there may be support parts that are not located directly below the control terminals 6f to 6j, and there may be control terminals on the fourth side 11d side where support parts 13c and 13d are not located directly below them. 【0049】 Figure 4 is a cross-sectional view taken in the positive direction of the Y-axis, showing the position passing through the control terminal 6a and the first support portion 13a of the semiconductor device according to the first embodiment shown in Figure 1. 【0050】 A heat sink 30 is provided below the resin frame 1. The heat sink 30 is made of a conductive material such as copper (Cu), Cu alloy, aluminum (Al), or Al alloy. The lower surface of the heat sink 30 is exposed from the sealing resin 9 and forms part of the bottom surface of the semiconductor device according to the first embodiment. 【0051】 An insulating plate 31 is provided on the upper side of the heat sink 30. The insulating plate 31 is made of a resin material such as liquid crystal polymer (LCP) or epoxy resin, with aluminum oxide (Al ２ O ３ ), aluminum nitride (AlN), silicon nitride (Si ３ N ４ It is composed of a material in which aluminum oxide (Al) or boron nitride (BN) is mixed in as a thermally conductive filler. ２ O ３ ), aluminum nitride (AlN), silicon nitride (Si ３ N ４ It may be composed of ceramic materials such as ). 【0052】On the upper surface side of the insulating board 31, conductive plates 32a and 32b are provided. The conductive plates 32a and 32b are made of a conductive material such as copper (Cu), a Cu alloy, aluminum (Al), or an Al alloy. When the insulating board 31 is made of a ceramic material, the insulating board 31, the heat dissipation plate 30, and the conductive plates 32a and 32b may constitute an insulating circuit board (30, 31, 32a, 32b) such as a direct copper bonding (DCB) substrate or an active brazing (AMD) substrate. 【0053】 On the upper surface side of the conductive plate 32a, semiconductor chips 8a and 8b are provided via a bonding material (not shown) such as solder or a sintered material. On the upper surface side of the conductive plate 32b, semiconductor chips 8c and 8d are provided via a bonding material (not shown) such as solder or a sintered material. ２ O ３ ) or diamond (C), etc. The semiconductor chips 8a to 8d may be a field effect transistor (FET) such as a metal oxide semiconductor field effect transistor (MOSFET), an insulated gate bipolar transistor (IGBT), a reverse conduction insulated gate bipolar transistor (RC-IGBT) in which a diode is connected in reverse parallel to the IGBT, an electrostatic induction (SI) thyristor, or a gate turn-off (GTO) thyristor. The number and arrangement positions of the semiconductor chips 8a to 8d are not particularly limited. 【0054】 Above the semiconductor chips 8a to 8d and below the resin frame 1, a wiring board (printed wiring board) 33 is provided. The wiring board 33 may be a multilayer wiring board having a plurality of conductive layers. Conductive members 34a to 34d such as pins are press-fitted into the wiring board 33. The semiconductor chips 8a to 8d are joined to the conductive members 34a to 34d via a bonding material (not shown) such as solder or a sintered material. The semiconductor chips 8a to 8d are electrically connected to the wiring board 33 via the conductive members 34a to 34d. Note that the semiconductor chips 8a to 8d and the wiring board 33 may be joined by a bonding material such as solder or a sintered material, or may be joined via a metal block made of copper or the like instead of the pins. 【0055】As shown in Figure 4, the portion of the resin frame 1 adjacent to the control terminal 6a on the first side 11a, together with the support portion 13a, has an inverted L-shaped cross-section. The first side 11a of the resin frame 1 is provided so as to overlap with the end of the wiring board 33. An opening 16f is provided on the fourth side 11d of the resin frame 1. The cross-sectional shapes of the portion of the resin frame 1 adjacent to the control terminals 6b to 6e on the first side 11a and the portion of the resin frame 1 adjacent to the control terminals 6f to 6j on the fourth side 11d also have an inverted L-shaped cross-section, similar to the support portion 13a shown in Figure 4. 【0056】 As shown in Figure 4, the control terminal 6a protrudes vertically from the upper and lower surfaces of the first side 11a. The control terminal 6a is press-fitted and bonded to the wiring board 33. The control terminal 6a is electrically connected to at least one of the semiconductor chips 8a to 8d via the wiring board 33. The control terminals 6b to 6j shown in Figure 1 are also press-fitted and bonded to the wiring board 33, similar to the control terminal 6a, and are electrically connected to at least one of the semiconductor chips 8a to 8d via the wiring board 33. 【0057】 The sealing resin 9 seals the sides and top surfaces of the insulating circuit board (30, 31, 32a, 32b), which consists of the insulating plate 31, heat sink 30, and conductive plates 32a, 32b located below the resin frame 1, excluding the bottom surface. Furthermore, the sealing resin 9 seals the sides and top surfaces of the semiconductor chips 8a to 8d, and the top, sides, and bottom surfaces of the wiring board 33. The sealing resin 9 is exposed through the opening 16f on the fourth side 11d. 【0058】 <Circuit Configuration of Semiconductor Device> Figure 5 shows an example of an equivalent circuit of a semiconductor device according to the first embodiment. As shown in Figure 5, the semiconductor device according to the first embodiment has a three-level circuit and has a positive terminal P, a negative terminal N, an intermediate terminal M, and an output terminal O. 【0059】The positive terminal P is connected to the drain of transistor T1. The source of transistor T1 is connected to the output terminal O and the drain of transistor T2. The source of transistor T2 is connected to the negative terminal N. The intermediate terminal M is connected to the source of transistor T3. The drain of transistor T3 is connected to the drain of transistor T4. The source of transistor T4 is connected to the output terminal O, the source of transistor T1, and the drain of transistor T2. Body diodes D1 to D4, which act as freewheeling diodes (FWDs), are built into transistors T1 to T4 in antiparallel connection. 【0060】 The positive terminal P, negative terminal N, intermediate terminal M, and output terminal O shown in Figure 5 correspond to the positive terminal 2, negative terminal 3, intermediate terminal 4, and output terminal 5 shown in Figure 1. The transistors T1 to T4 and body diodes D1 to D4 shown in Figure 5 correspond to semiconductor chips such as semiconductor chips 8a to 8d shown in Figure 4. The gate terminals or auxiliary source terminals of transistors T1 to T4 shown in Figure 5 correspond to the control terminals 6a to 6j shown in Figure 1. 【0061】 <Method for Manufacturing Semiconductor Devices> Next, an example of a method for manufacturing a semiconductor device according to the first embodiment (assembly method) will be described. 【0062】 First, a resin frame 1 is formed using a molding method (primary molding) such as transfer molding or injection molding with a mold, in which the control terminals 6a to 6j are integrated, as shown in Figure 6. The resin frame 1 also integrates the positive terminal 2, negative terminal 3, intermediate terminal 4, and output terminal 5. 【0063】 The upper surface of one end 2a of the positive terminal 2 is exposed from the upper surface of the resin frame 1. The other end 2b of the positive terminal 2 extends to the opening 12 of the resin frame 1 and is electrically connected to at least one of the semiconductor chips 8a to 8d shown in Figure 4. The other end 2b of the positive terminal 2 extends toward the opening 12 of the resin frame 1 and is located below the opening 12. 【0064】The upper surface of one end 3a of the negative electrode terminal 3 is exposed from the upper surface of the resin frame 1. The other end 3b of the negative electrode terminal 3 extends to the opening 12 of the resin frame 1 and is electrically connected to at least one of the semiconductor chips 8a to 8d shown in Figure 4. The other end 3b of the negative electrode terminal 3 extends toward the opening 12 of the resin frame 1 and is located below the opening 12. 【0065】 The upper surface of one end 4a of the intermediate terminal 4 is exposed from the upper surface of the resin frame 1. The other end 4b of the intermediate terminal 4 extends to the opening 12 of the resin frame 1 and is electrically connected to at least one of the semiconductor chips 8a to 8d shown in Figure 4. The other end 4b of the intermediate terminal 4 extends toward the opening 12 of the resin frame 1 and is located below the opening 12. 【0066】 The upper surface of one end 5a of the output terminal 5 is exposed from the upper surface of the resin frame 1. The other end 5b of the output terminal 5 extends to the opening 12 of the resin frame 1 and is electrically connected to at least one of the semiconductor chips 8a to 8d shown in Figure 4. The other end 5b of the output terminal 5 extends toward the opening 12 of the resin frame 1 and is located below the opening 12. 【0067】 Furthermore, a wiring board 33 with conductive members 34a to 34d press-fitted is prepared (see Figure 4). Then, the control terminals 6a to 6j, which are integrated with the resin frame 1, are press-fitted into the wiring board 33 to integrate them (see Figure 7). 【0068】 Furthermore, an insulating circuit board (30, 31, 32a, 32b) is prepared, consisting of an insulating plate 31, a heat sink 30, and conductive plates 32a, 32b (see Figure 4). Semiconductor chips 8a to 8d are mounted on the upper surfaces of the conductive plates 32a, 32b via a bonding material. An integrated resin frame 1 and a wiring board 33 are placed opposite the upper surfaces of the semiconductor chips 8a to 8d. Conductive members 34a to 34d, which are press-fitted into the wiring board 33, are mounted on the upper surfaces of the semiconductor chips 8a to 8d via a bonding material. Subsequently, the conductive plates 32a, 32b, semiconductor chips 8a to 8d, and conductive members 34a to 34d are bonded to each other by heating or other means. As a result, as shown in Figure 7, a part 10 before transfer molding (secondary molding) is manufactured. 【0069】 As shown in Figure 7, since the component 10 has not yet undergone transfer molding, it does not have the resin sealing with the sealing resin 9 shown in Figures 1 to 4. Therefore, as shown in Figure 7, the sealing resin 9 is not exposed from the opening 12 on the top surface and the openings 16a to 16f on the sides of the resin frame 1. In Figure 7, the wiring pattern of the wiring board 33 is omitted from the illustration. 【0070】 Next, the inside of the component 10 is filled with sealing resin 9 by transfer molding to seal the semiconductor chips 8a to 8d, etc. Figure 8 is a vertical cross-sectional view showing the component 10 placed in the molds 41 and 42 used for transfer molding. As shown in Figure 8, the molds 41 and 42 are provided with a component placement section 40 for placing the component 10 and an inflow path (gate runner section) 43 through which the resin flows. Terminal placement sections 46 and 47 are provided in the component placement section 40. Protrusions 7a to 7j are fitted into the terminal placement sections 46 and 47, and control terminals 6a to 6j are placed that are exposed from the protrusions 7a to 7j. Although not shown in Figure 8, the molds 41 and 42 may be provided with an outlet path for discharging excess resin. 【0071】 As shown in Figure 8, the component 10 is placed in the component placement section 40 of the molds 41 and 42, upside down, with the upper side of the resin frame 1 of the component 10 facing downwards and the lower side of the heat sink 30 facing upwards. Then, with the component 10 held in place by the molds 41 and 42, resin is poured in from the inflow path 43 to fill the inside of the component 10 with sealing resin 9 and seal the semiconductor chips 8a to 8d, etc. At this time, the lower ends of the support parts 13a to 13d provided on the resin frame 1 (the upper ends of the support parts 13a to 13d in Figure 8 because it is upside down) come into contact with the mold 42, allowing the portion of the resin frame 1 adjacent to the control terminals 6a to 6j to be firmly pressed against the mold 41. In this way, the semiconductor device according to the first embodiment is completed. 【0072】According to the semiconductor device of the first embodiment, by integrating the control terminals 6a to 6j with the resin frame 1 and causing the control terminals 6a to 6j to protrude upward from the upper surface of the resin frame 1, it is possible to miniaturize the product and reduce inductance by shortening the wiring length. Furthermore, by forming an opening 12 in the center of the resin frame 1, it becomes easy to check the connection status after assembly and to check the continuity of the circuit wiring. In addition, by using a resin frame 1 with integrated control terminals 6a to 6j, it becomes possible to supply assembled products with high dimensional accuracy. 【0073】 Furthermore, if the resin frame 1 is not provided with support parts 13a to 13d, the portion of the resin frame 1 adjacent to the control terminals 6a to 6j cannot be firmly pressed against the mold 41 during transfer molding, and sealing performance cannot be maintained. Figure 9 is an enlarged view of the dashed area A in Figure 8, showing the case where support part 13a is not provided. As schematically shown by the arrows in Figure 9, resin may enter the gap between the resin frame 1 and the mold 41, potentially causing resin leakage in the terminal arrangement portions 46 and 47 where the control terminals 6a to 6j are located. 【0074】 In contrast, according to the semiconductor device of the first embodiment, the support portions 13a to 13d can firmly press the portion of the resin frame 1 adjacent to the control terminals 6a to 6j against the mold 41. Therefore, the sealing properties of the resin can be maintained, and resin leakage from the gap between the resin frame 1 and the mold 41 to the control terminals 6a to 6j can be prevented. 【0075】 (Second Embodiment) Figure 10 is a perspective view of a semiconductor device according to the second embodiment. As shown in Figure 10, the semiconductor device according to the second embodiment differs from the semiconductor device according to the first embodiment shown in Figure 1 in that the resin frame 1 is connected to the lower part of the support parts 13a and 13b and has a beam part 18 that extends parallel to the first side 11a. 【0076】 The lower end of the beam portion 18 forms part of the bottom surface of the semiconductor device according to the second embodiment. The beam portion 18 connects the corner portion 20a to the support portion 13a, the support portion 13a to the support portion 13b, and the support portion 13b to the corner portion 20b, respectively. Openings 16a to 16c are provided on the upper side of the beam portion 18. 【0077】 Although not shown in the figures, the resin frame 1 also has a beam portion on the fourth side 11d that is connected to the lower part of the support portions 13c, 13d (see Figure 3) and extends parallel to the fourth side 11d. The lower end of the beam portion on the fourth side 11d forms part of the bottom surface of the semiconductor device according to the second embodiment. The beam portion on the fourth side 11d connects the corner portion 20c to the support portion 13c, the support portion 13c to the support portion 13d, and the support portion 13d to the corner portion 20d, respectively. Openings 16d to 16f (see Figure 3) are provided on the upper side of the beam portion on the fourth side 11d. The other configurations of the semiconductor device according to the second embodiment are substantially the same as those of the semiconductor device according to the first embodiment, so redundant explanations are omitted. 【0078】 According to the semiconductor device of the second embodiment, similar to the semiconductor device of the first embodiment, the support portions 13a to 13d allow the portion of the resin frame 1 adjacent to the control terminals 6a to 6j to be firmly pressed against the mold 41. Therefore, the sealing properties of the resin can be maintained, and resin leakage from the gap between the resin frame 1 and the mold 41 to the control terminals 6a to 6j can be prevented. Furthermore, according to the semiconductor device of the second embodiment, by providing the beam portion 18, the portion of the resin frame 1 adjacent to the control terminals 6a to 6j can be firmly pressed against the mold 41. 【0079】 (Third Embodiment) Figure 11 is a perspective view of a semiconductor device according to the third embodiment. As shown in Figure 11, the semiconductor device according to the third embodiment differs from the semiconductor device according to the first embodiment shown in Figure 1 in that the resin frame 1 includes support portions 19a to 19f provided inside the sides of the first side 11a and the four sides 11d. In Figure 11, the support portions 19a to 19f located inside the resin frame 1 and the sealing resin 9 are schematically shown with dashed lines. 【0080】 Figure 11 illustrates a case where the support parts 19a to 19f are cylindrical, but the shape of the support parts 19a to 19f is not limited to this. The support parts 19a to 19f may be, for example, rectangular prisms, cylindrical shapes, or plate shapes. Also, Figure 11 illustrates six support parts 19a to 19f, but the number of support parts 19a to 19f is not limited to this. 【0081】 Support portions 19a to 19c are provided so as to extend downward from the lower surface of the portion adjacent to the control terminals 6a to 6e on the first side 11a of the resin frame 1. Support portion 19a is provided between control terminal 6a and control terminal 6b. Support portion 19b is provided between control terminal 6c and control terminal 6d. Support portion 19c is provided between control terminal 6e and the second side 11b. 【0082】 Support portions 19d to 19f are provided so as to extend downward from the lower surface of the portion adjacent to the control terminals 6f to 6j on the fourth side 11d of the resin frame 1. Support portion 19d is provided between control terminal 6f and control terminal 6g. Support portion 19e is provided between control terminal 6h and control terminal 6i. Support portion 19f is provided between control terminal 6j and the third side 11c. 【0083】 An opening 16x is provided on the side of the resin frame 1 on the first side 11a. Sealing resin 9 is filled into the opening 16x, and the sealing resin 9 is exposed from the opening 16x. Although not shown in the figure, an opening similar to the opening 16x is also provided on the side of the resin frame 1 on the fourth side 11d. Sealing resin 9 is filled into the opening on the fourth side 11d, and the sealing resin 9 is exposed from the opening. 【0084】 Figure 12 is a cross-sectional view taken in the positive Y-axis direction at a position passing through the control terminal 6a and support portion 19f of the semiconductor device according to the third embodiment shown in Figure 11. As shown in Figure 12, the support portion 19f extends downward from the lower surface inside the side surface of the fourth side 11d of the resin frame 1. The lower end of the support portion 19f is in contact with the upper surface of the conductive plate 32b that constitutes the insulating circuit board (30, 31, 32a, 32b). Although not shown, the lower ends of the support portions 19a to 19e shown in Figure 11 are in contact with the conductive plate of the insulating circuit board (30, 31, 32a, 32b), similar to the support portion 19f shown in Figure 12. The lower ends of the support portions 19a to 19f may extend further downward without overlapping with the insulating circuit board (30, 31, 32a, 32b) and form part of the bottom surface of the semiconductor device according to the third embodiment. 【0085】The sealing resin 9 is exposed from the opening 16x on the fourth side 11d of the resin frame 1. An opening 16y is provided on the first side 11a of the resin frame 1. The sealing resin 9 is exposed from the opening 16y. The other configurations of the semiconductor device according to the third embodiment are substantially the same as those of the semiconductor device according to the first embodiment, so redundant explanations are omitted. 【0086】 According to the semiconductor device of the third embodiment, by providing support portions 19a to 19f on the resin frame 1, the resin frame 1 can be firmly pressed against the mold 41 during transfer molding, thereby maintaining sealing performance. This prevents resin leakage from the gap between the resin frame 1 and the mold 41 to the control terminals 6a to 6j. 【0087】 (Other Embodiments) As described above, this disclosure has been described in terms of the first to third embodiments, but the descriptions and drawings that constitute part of this disclosure should not be understood as limiting this disclosure. Various alternative embodiments, examples and operational techniques will become apparent to those skilled in the art from this disclosure. 【0088】 For example, in the first to third embodiments, a case where a positive terminal 2, a negative terminal 3, an intermediate terminal 4, and an output terminal 5 are provided as examples to constitute a three-level circuit, but the invention is not limited thereto. For example, a two-level circuit may be provided with a positive terminal 2, a negative terminal 3, and an output terminal 5, or a multi-level circuit with four or more levels may be provided. 【0089】 Furthermore, the semiconductor device may also be provided with both the support portions 13a to 13d of the first and second embodiments and the support portions 19a to 19f of the semiconductor device according to the third embodiment. 【0090】 Furthermore, the configurations disclosed in the first to third embodiments can be combined as appropriate, within a non-contradictory scope. Thus, this disclosure naturally includes various embodiments not described herein. Therefore, the technical scope of this disclosure is determined solely by the inventive features relating to the claims that are appropriate based on the above description. 【0091】1...Resin frame 2...Positive terminal 3...Negative terminal 4...Intermediate terminal 5...Output terminal 6a-6j...Control terminals 7a-7j...Protrusions 8a-8d...Semiconductor chip 9...Sealing resin 10...Component 11a...First side 11b...Second side 11c...Third side 11d...Fourth side 13...Terminal placement area 13a-13d...Support area 14...Terminal placement area 14a, 14b...Recess 15...Beam 16a-16f, 16x, 16y...Opening 17, 18...Beam 19a-19f...Support area 20a-20d...Corner 30...Heat sink 31...Insulating plate 32a, 32b...Conductive plate 33...Wiring board (printed wiring board) 34a-34d...Conductive material 40...Component placement area 41...Mold 41, 42... Mold 43... Inflow path (gate runner section) 46, 47... Terminal arrangement section D1 to D4... Body diode M... Intermediate terminal N... Negative terminal O... Output terminal P... Positive terminal S1 to S6... Spacing T1 to T4... Transistor W1 to W4... Width
Claims
1. A semiconductor device comprising: a plurality of semiconductor chips; a frame-shaped resin frame provided above the plurality of semiconductor chips and having a first opening in the center of its upper surface; a first control terminal protruding vertically from the upper and lower surfaces of the first side of the resin frame and electrically connected to any one of the plurality of semiconductor chips; external terminals arranged on the second and third sides of the resin frame perpendicular to the first side, respectively, with the upper surface of one end exposed from the upper surface of the resin frame and the other end extending to the first opening and electrically connected to any one of the plurality of semiconductor chips; and a sealing resin embedded below the resin frame and in the first opening, wherein the resin frame comprises a first support portion extending downward from the first side adjacent to the first control terminal.
2. The semiconductor device according to claim 1, wherein the first support portion and the second opening are provided on the side surface of the first side of the resin frame, the lower end of the first support portion forms part of the bottom surface of the semiconductor device, and the second opening is filled with the sealing resin.
3. The semiconductor device according to claim 2, wherein the cross-section of the portion of the first side adjacent to the first control terminal is in the shape of an inverted L, and the upper surface of the first side at the base of the first control terminal is raised upward.
4. The semiconductor device according to claim 1 or 2, wherein the resin of the resin frame has a melting point higher than that of the sealing resin.
5. The semiconductor device according to claim 1 or 2, comprising a wiring board provided below the first opening of the resin frame and electrically connected to the first control terminal.
6. The semiconductor device according to claim 5, comprising an insulating circuit board on which the plurality of semiconductor chips are mounted, wherein the sealing resin seals the upper surface and sides of the insulating circuit board, except for the lower surface of the insulating circuit board.
7. The semiconductor device according to claim 6, wherein the wiring board is electrically connected to each of the plurality of semiconductor chips.
8. The semiconductor device according to claim 7, wherein the resin frame has a fourth side opposite to the first side, the semiconductor device has a second control terminal that protrudes vertically from the upper and lower surfaces of the fourth side and is electrically connected to any one of the plurality of semiconductor chips, and the resin frame has a second support portion that extends downward from the fourth side adjacent to the second control terminal.
9. The semiconductor device according to claim 8, wherein the cross-section of the portion of the four sides adjacent to the second control terminal is in the shape of an inverted L, and the upper surface of the four sides at the base of the second control terminal is raised upward.
10. The semiconductor device according to claim 8, wherein the wiring board is electrically connected to the second control terminal.
11. The semiconductor device according to claim 6, wherein the first support portion extends downward from the lower surface of the resin frame, which is inward from the side surface of the first edge, and the lower end of the first support portion is in contact with the upper surface of the insulating circuit board.
12. The semiconductor device according to claim 2, wherein the resin frame is connected to the lower part of the first support portion, extends parallel to the first side, and comprises a beam portion that forms part of the bottom surface of the semiconductor device.