High-frequency device and multiplexer
The high-frequency device addresses the issue of signal wave propagation affecting chip components by strategically positioning conductor patterns and vias in the substrate, improving high-frequency characteristics and attenuation.
WO2026126762A1PCT designated stage Publication Date: 2026-06-18MURATA MFG CO LTD
Patent Information
- Authority / Receiving Office
- WO · WO
- Patent Type
- Applications
- Current Assignee / Owner
- MURATA MFG CO LTD
- Filing Date
- 2025-11-19
- Publication Date
- 2026-06-18
Smart Images
Figure JP2025040497_18062026_PF_FP_ABST
Abstract
This high-frequency device (1) comprises a chip component (10) mounted on a first surface (31) of a substrate (30). The chip component (10) has: a first facing surface (11) that faces the first surface (31); and a conductor part (15). The conductor part (15) includes a functional electrode (16) and / or an interconnection electrode (17). The substrate (30) has: a signal electrode (33); a reference potential electrode (35); and an inductor (40) including a plurality of conductor patterns (p). The signal electrode (33) is in electrical continuity with the conductor part (15) of the chip component (10). The inductor (40) includes a first conductor pattern (p1) nearest the first surface (31) and a second conductor pattern (p2) nearest a second surface (32). The second conductor pattern (p2) is connected to the signal electrode (33) without going through any other conductor pattern except itself, and the first conductor pattern (p1) is connected to the reference potential electrode (35) without going through any other conductor pattern except itself.
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