Decorative Surface Effects TRIZ Cases
- Semiconductor Etching Gas Mixture for High-Speed SiO2 and Si Processing
Cyclic halogenated carbide-based gases dissociate in plasma to form reactive molecules that enhance etching rates for silicon oxide and poly-silicon layers.
- Ring-Shaped Support Member for Substrate Processing
A ring-shaped support member bonds to a substrate's outer periphery to enable simultaneous processing of both surfaces.
- Ozone-Treated Magnetic Recording Medium for High Density
Ozone oxidation creates magnetically partitioned patterns that resolve the contradiction between high areal density and signal-to-noise ratio.
- MEMS Transfer via Laser Lift-Off Carrier
Laser-absorbing layer on transparent carrier allows high-temperature MEMS processing without temporary bonding limits.
- CMUT Ultrasonic Sensor Segmented Electrode Voltage Control
Segmenting electrodes allows independent DC and AC voltage control, resolving signal distortion from switching delays while maintaining high image quality.
- SOI Wafer Etching for Thin Semiconductor Substrates
Masked chemical etching reduces SOI wafer thickness while avoiding mechanical stress and residue from lamination processes.