Lapping Machines TRIZ Cases

Dual heating with temperature feedback stabilizes CMP slurry on the pad, reducing waste and improving wafer flatness.

A reducing-agent anti-oxidation layer prevents post-planarization oxidation, keeping conductive and dielectric surfaces coplanar.

Pulsed-current anodization boosts SiC polishing speed by restoring OH- supply near the surface while improving flatness and uniformity.

Robot-hand sensing and suction pressure feedback detect wafers on a spinner table before cleaning, preventing overlap damage and manual checks.

A two-step wafer grinding sequence removes damaged layers while preserving a larger usable area and avoiding long processing time.

Integrated vacuum suction clears slurry by-products and debris from the CMP pad to improve removal-rate consistency and reduce surface defects.

Torque-based contact detection adjusts a moving bevel cleaning tool during substrate rotation to maintain cleaning quality despite wear.

Zirconia abrasives, salt additives, and acidic pH tuning raise the SiOC-to-SiN polishing rate ratio for selective semiconductor polishing.

Angled energized nozzles clean CMP substrate edges and carrier head gaps while deionized water limits overheating and defects.

Independent CMP modules pair each carrier support, loading station, and platen to cut transfer delays and raise throughput density.

Non-contact laser sensing and rotary alignment capture carrier thickness around eccentric wafer holes for more uniform double-side polishing.

A flattening resin reference surface enables sequential polishing that achieves target wafer warp while keeping nanotopography low for epitaxy or bonding.

Titania-silica hybrid CMP abrasives with a controlled oxidizer balance ruthenium and dielectric removal while reducing tool corrosion.

A CMP slurry balances ruthenium and hard mask removal with azole inhibition and pH control to limit copper corrosion in BEOL polishing.

Overhead carrier assemblies shift between platen and loading positions so CMP modules can polish and transfer substrates in parallel with less handling delay.

Rotating transfer arms and carrier orbits cut CMP waiting and transfer time by enabling parallel substrate polishing and handling.

A thicker wafer edge formed by grinding enables low-speed spin etching, improving thickness uniformity while reducing cracking risk.

Chilled slurry, platen cooling, and an aluminum platen keep SiC CMP pad temperature below critical levels while sustaining higher removal rates.