Metal Silicides TRIZ Cases

A cerium-silicon cage intermetallic anode enables stable lithium insertion with 100 mAh/g+ capacity while reducing battery weight and cost.

Multi-phase Si alloy powder balances silicon capacity with reduced cracking by controlling phase composition and particle size for better Li-ion cycling.

A high-entropy silicide and silicon composite anode reduces cycling volume change while preserving capacity and mechanical strength in Li-ion batteries.

A Cu-matrix Si-Sn alloy with controlled SiOx and intermetallic phases suppresses cycling expansion to improve capacity retention and coulombic efficiency.

Rapid annealing drives diffusion-controlled lithium silicide formation in silicon anodes to offset first-cycle lithium loss with simpler production.

A boron or phosphorus surface-rich gradient in silicon anodes improves initial efficiency and cycle life while limiting discharge capacity loss.

A zirconium-silicon cage intermetallic anode boosts capacity density while limiting charge-discharge deterioration and battery weight.

Centrifugal atomization forms prelithiated silicon oxide particles that cut lithium handling risk and reduce silicon anode expansion stress.

Selective metal silicide deposition on polysilicon patterns reduces electrical resistance in fine structures, minimizing voltage loss during operation.

Rare earth element alloy matrix absorbs volume change stress during cycling, preventing dendritic lithium formation and extending battery life.

Reaction of ammonium tris(trichlorosilyl)germanide salts with AlCl3 produces uncharged tetrakis(trichlorosilyl)germane without pyrophoric reagents.

Segmenting synthesis into core formation and substituent addition stages resolves the trade-off between manufacturing complexity and compound versatility.

Silicon-containing alloy with silicide phase suppresses volume expansion during cycling, resolving capacity-life trade-off.

Using metal oxide reduction to lower the thermal budget while maintaining uniform resistivity across three-dimensional semiconductor structures.

A silicon-tin alloy negative electrode material disperses amorphous silicon in a silicide matrix to maintain structural integrity during charge cycles.

Separate CrSi2 synthesis and sintering distribute chromium along grain boundaries, reducing pesting in MoSi2 heating elements.

An arc melting and spark plasma sintering process for YbSi2 materials improves power factor in the 150-300°C range.

Liquid infiltration synthesizes inorganic compound particles below the melting point, suppressing composition variation and contamination without vaporization.

An additional band within the forbidden gap raises electric conductivity in semiconductor base materials.

Embedding copper catalyst in metallurgical silicon prevents aggregation and improves trichlorosilane yield.

Silica additives prevent copper silicide agglomeration during halosilane production, maintaining uniform fluidization at 400°C.

Amorphous silicon phases dispersed in silicide matrices suppress volume expansion and oxidation, maintaining cycle durability.

Carbon-coated silicon particles accommodate volume expansion, preventing fatigue cracking and capacity fade.

Silyl-functionalized ligands stabilize volatile precursors against premature decomposition, ensuring high-quality Mn, Ni, and Co thin films.