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Home»TRIZ Case»Zero-Voltage Switching for Reliable Power Inversion Circuits

Zero-Voltage Switching for Reliable Power Inversion Circuits

May 22, 20263 Mins Read
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Zero-Voltage Switching for Reliable Power Inversion Circuits

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Summary

Problems

Conventional power inversion circuits face high switching losses and potential shoot-through problems in MOSFETs, limiting high power density performance and complicating controller design due to high frequency hard-switching operations and noise issues.

Innovation solutions

The implementation of a TT control scheme with two driver signal pairs, one near 50% duty cycle and one pulse-width modulated, reduces the shoot-through problem and enhances reliability by allowing zero-voltage switching (ZVS) operation, thereby reducing switching losses and improving circuit reliability.

TRIZ Analysis

Specific contradictions:

switching loss
vs
shoot-through problem

General conflict description:

Loss of energy
vs
Reliability
TRIZ inspiration library
10 Preliminary action
Try to solve problems with it

Principle concept:

If phase-shift control scheme is used to reduce switching loss, then ZVS operation is achieved, but shoot-through problem on MOSFETs increases

Why choose this principle:

The patent applies preliminary action by introducing a dead-time interval before the complementary MOSFET turns on, during which the first MOSFET is turned off. This preliminary turn-off action prevents shoot-through current by ensuring the first MOSFET is completely off before the second MOSFET turns on, while still allowing ZVS to occur during this dead-time period through energy exchange between the inductor and MOSFET output capacitance.

TRIZ inspiration library
35 Parameter changes
Try to solve problems with it

Principle concept:

If longer dead-time interval is increased to reduce shoot-through problem, then reliability improves, but available operating frequency decreases

Why choose this principle:

The patent applies parameter changes by optimizing the dead-time interval to a specific range (50ns-200ns) that balances two competing requirements: it is long enough to allow complete turn-off of the first MOSFET and prevent shoot-through, but short enough to minimize the impact on operating frequency. This optimized parameter enables both high reliability and high-frequency operation (above 100kHz).

Application Domain

zero-voltage switching power inversion circuits mosfet reliability

Data Source

Patent US11309806B2 Modified pulse-width modulation control zero-voltage-switching power inversion circuits
Publication Date: 19 Apr 2022 TRIZ 电器元件
FIG 01
US11309806-D00001
FIG 02
US11309806-D00002
FIG 03
US11309806-D00003
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AI summary:

The implementation of a TT control scheme with two driver signal pairs, one near 50% duty cycle and one pulse-width modulated, reduces the shoot-through problem and enhances reliability by allowing zero-voltage switching (ZVS) operation, thereby reducing switching losses and improving circuit reliability.

Abstract

To disclose several zero-voltage-switching (ZVS) power inversion circuits, a modified pulse-width modulation control scheme is employed. It includes two driver-signal pairs. Each pair has a near 50% duty ratio driver signal and a pulse-width modulation driver signal. Because the combination timing waveform of the two driver signals of each pair resembles to a letter T, the control scheme is thus briefly named as double T (TT) control. In addition to achieving zero-voltage switching performance for high frequency operation, the disclosed power inversion circuits can alleviate the potential shoot-through problem existed in phase-shift control full-bridge power inversion circuits. Consequently, reliability performance can be improved.

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    mosfet reliability power inversion circuits zero-voltage switching
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    Table of Contents
    • Zero-Voltage Switching for Reliable Power Inversion Circuits
      • Summary
      • TRIZ Analysis
      • Data Source
      • Accelerate from idea to impact
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