Nichtflüchtige speichervorrichtung und verfahren zur steuerung davon
AT1894747TInactive Publication Date: 2026-03-15SAMSUNG ELECTRONICS CO LTD
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Patent Information
- Application Number
- AT2023207019T
- Authority / Receiving Office
- AT · AT
- Patent Type
- Patents
- Current Assignee / Owner
- Priority Date
- 2023-02-24
- Filing Date
- 2023-10-31
- Publication Date
- 2026-03-15
- Estimated Expiration
- Not applicable · inactive patent
AI Technical Summary
Technical Problem
Nonvolatile memory devices face challenges in maintaining retention characteristics due to increased interference between memory cells as device integration and capacity increase, leading to degraded performance.
Method used
A method and device that perform a preprogram operation to increase threshold voltages of over-erased memory cells before data programming, reducing disturbance and enhancing retention characteristics by identifying and addressing over-erased groups within the memory device.
Benefits of technology
This approach effectively reduces memory cell disturbance and improves retention characteristics without compromising performance, enhancing the reliability of nonvolatile memory devices.
✦ Generated by Eureka AI based on patent content.
Abstract
A method of controlling a nonvolatile memory device, includes: determining, based on a write address, whether selected memory cells of the nonvolatile memory device corresponding to the write address are included in an over-erased group; based on the selected memory cells being included in the over-erased group, performing a preprogram operation to increase threshold voltages of an over-erased state of the selected memory cells; and after completion of the preprogram operation, performing a data program operation to store write data in the selected memory cells.
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