Laser chip light coupling structure and manufacturing method thereof

Abstract

The application provides a laser chip light coupling structure and a manufacturing method thereof. The laser chip light coupling structure comprises: a light source area, a waveguide area and an output area arranged in sequence; the light source area is provided with a multimode multi-junction laser, and the multimode multi-junction laser has a plurality of laser emission active areas; the modes of the laser emitted by each laser emission active area are the same or different; the waveguide area is provided with a plurality of waveguide cores extending from the light source area to the output area; the waveguide cores are suitable for guiding the laser emitted by the laser emission active areas into the output area; the waveguide cores correspond to the plurality of laser emission active areas; and the output area is suitable for externally outputting the laser from the waveguide cores. The laser chip light coupling structure provided by the application can provide higher input light power and light beam quality compared with a single-mode laser.

Description

Technical Field

[0001] This invention relates to the field of laser optical coupling technology, and more specifically to a laser chip optical coupling structure and its manufacturing method. Background Technology

[0002] In fields such as optical communication, lidar, and laser ranging, the excellent performance of silicon photonics devices has been proven. For example, optical phase array (OPA) chips can achieve high collimation scanning in the far field through beam splitting, and laser ranging achieves ultra-small error measurements. However, silicon photonics devices still face challenges in long-distance detection, mainly due to two reasons: 1. The fundamental mode's operating mode limits the use of high-power lasers (high-power lasers typically refer to laser emitting devices with an average power of 10W or more), as high-power single-mode lasers are prone to burn-out at the output port, reducing the quality of the output beam; 2. The internal design of the devices introduces significant losses. For example, the beam splitter structure of the OPA, with its tens or even hundreds of splits, easily increases the device size and beam loss, thus requiring high input optical power. Due to the limitation of single-mode operation of silicon-based photonic chips, current technical solutions typically use single-mode operation for the input light source, which greatly limits the maximum power of the input light source. Therefore, a solution is needed to address the limitations of using high-power lasers in existing technologies and to improve input optical power and beam quality. Summary of the Invention

[0003] This invention provides a laser chip optical coupling structure and its manufacturing method to solve the problem of limited use of high-power lasers in the prior art, and to improve input optical power and beam quality.

[0004] This invention provides a laser chip optical coupling structure, comprising: a light source region, a waveguide region, and an output region arranged sequentially; the light source region is provided with a multimode multijunction laser, which has multiple laser emitting active regions; the lasers emitted by each laser emitting active region may have the same or different modes; the waveguide region is provided with multiple waveguide core layers extending from the light source region to the output region; the waveguide core layers are adapted to guide the lasers emitted by the laser emitting active regions into the output region; the mode field of the waveguide core layers corresponds to and matches the mode field of the laser emitting active regions; the structure of the waveguide core layers includes one of a positive cone structure, an inverted cone structure, or a multilayer waveguide coupling structure; the output region is adapted to output the lasers from the waveguide core layers.

[0005] Optionally, each laser emitting active region is arranged in a parallel array; each waveguide core layer is arranged in parallel; the width of each waveguide core layer has an inverted cone structure or a positive cone structure in the direction from the light source region to the output region.

[0006] Optionally, each laser emitting active region is arranged in a parallel array; each waveguide core layer is arranged in parallel; and the height of each waveguide core layer gradually decreases from the source region to the output region.

[0007] Optionally, each laser emitting active region is arranged in a parallel array; each waveguide core layer is arranged in parallel; the width of each waveguide core layer has an inverted cone structure or a positive cone structure in the direction from the light source region to the output region; and the height of each waveguide core layer gradually decreases in the direction from the light source region to the output region.

[0008] Optionally, the laser chip optical coupling structure includes multiple arrayed laser units. Each laser unit comprises a portion of a source region, a portion of a waveguide region, and a portion of an output region. Each laser unit includes a multimode multijunction laser. The portion of the laser unit located in the waveguide region includes a front waveguide core layer and a rear waveguide core layer. One end of the front waveguide core layer faces the multimode multijunction laser, and the other end is connected to the rear waveguide core layer. One end of the rear waveguide core layer is connected to the front waveguide core layer, and the other end faces the output region. The interconnected front and rear waveguide core layers form a single structure. The rear waveguide core layer includes multiple vertically arranged rear sub-waveguide core layers. In the rear sub-waveguide core layers, in the direction from the source region to the output region, the length of each rear sub-waveguide core layer is less than the length of the next lower rear sub-waveguide core layer, but greater than the length of the next higher rear sub-waveguide core layer.

[0009] Optionally, the multiple waveguide core layers in the laser unit also include multiple auxiliary waveguide core layers; the auxiliary waveguide core layer includes a front straight coupling section and a rear straight coupling section, as well as an S-curve coupling section connecting the front straight coupling section and the rear straight coupling section; the front straight coupling section is close to the rear waveguide core layer, and the rear straight coupling section is far away from the rear waveguide core layer; the width of the auxiliary waveguide core layer remains the same from the end facing the light source region to the end facing the output region; the height of the auxiliary waveguide core layer is set to be the same as the height of the lowest sub-waveguide core layer in the rear waveguide core layer; the width of the auxiliary waveguide core layer is the width of a single-mode waveguide.

[0010] Optionally, the front waveguide core layer includes multiple front sub-waveguide core layers; each front sub-waveguide core layer corresponds one-to-one with each stage in a multimode multijunction laser; each front sub-waveguide core layer is respectively connected to a sub-waveguide core layer of a certain height in the rear waveguide core layer; the interconnected front sub-waveguide core layers and rear waveguide core layers form an integral structure.

[0011] This invention also provides a method for manufacturing a laser chip optical coupling structure, comprising the following steps: forming a light source region, a waveguide region, and an output region arranged sequentially; forming a multimode multijunction laser in the light source region, the multimode multijunction laser having multiple laser emitting active regions; the lasers emitted by each laser emitting active region having the same or different modes; forming multiple waveguide core layers extending from the light source region to the output region in the waveguide region; the waveguide core layers being adapted to guide the lasers emitted by the laser emitting active regions into the output region; the mode field of the waveguide core layers corresponding to and matching the mode field of the laser emitting active regions; and the output region being adapted to output the lasers from the waveguide core layers to the outside.

[0012] Optionally, the waveguide core layer is formed by a gray etching process.

[0013] The technical solution of this invention has the following advantages:

[0014] The laser chip optical coupling structure provided by this invention features a multimode multijunction laser in the light source region, possessing multiple active laser emission regions, thus realizing the emission of multimode multijunction laser beams. The mode fields of the waveguide core layer in the waveguide region correspond one-to-one with the mode fields of the active laser emission regions, achieving coupled input of the multimode multijunction laser beam. After conversion in the waveguide region, the multimode beams propagate in their respective single-mode waveguides, avoiding interference effects. Compared to traditional single-mode lasers, this structure provides higher input optical power and better beam quality. Attached Figure Description

[0015] To more clearly illustrate the specific embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the specific embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are some embodiments of the present invention. For those skilled in the art, other drawings can be obtained from these drawings without creative effort.

[0016] Figure 1 A top view schematic diagram of Embodiment 1 of the laser chip optical coupling structure provided by the present invention;

[0017] Figure 2 for Figure 1 Schematic diagram of the cross section of section AA;

[0018] Figure 3 A top view schematic diagram of Embodiment 2 of the laser chip optical coupling structure provided by the present invention;

[0019] Figure 4 for Figure 3 Schematic diagram of the cross section of section AA;

[0020] Figure 5 A top view schematic diagram of Embodiment 3 of the laser chip optical coupling structure provided by the present invention;

[0021] Figure 6 for Figure 5 Schematic diagram of the cross section of section AA;

[0022] Figure 7 A top view schematic diagram of Embodiment 4 of the laser chip optical coupling structure provided by the present invention;

[0023] Figure 8 for Figure 7 A schematic diagram of the cross-section of section AA. Detailed Implementation

[0024] To address the limitations of using high-power lasers in existing technologies, this invention provides a laser chip optical coupling structure and its manufacturing method.

[0025] The laser chip optical coupling structure provided by this invention includes: a light source region, a waveguide region, and an output region arranged in sequence; the light source region is provided with a multimode multijunction laser, which has multiple laser emitting active regions; the lasers emitted by each laser emitting active region may have the same or different modes; the waveguide region is provided with multiple waveguide core layers extending from the light source region to the output region; the waveguide core layers are adapted to guide the lasers emitted by the laser emitting active regions into the output region; the mode field of the waveguide core layers corresponds to and matches the mode field of the multiple laser emitting active regions; the output region is adapted to output the lasers from the waveguide core layers to the outside.

[0026] The technical solution of the present invention will now be clearly and completely described with reference to the accompanying drawings. Obviously, the described embodiments are only some, not all, of the embodiments of the present invention. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of the present invention.

[0027] In the description of this invention, it should be noted that the terms "center," "upper," "lower," "left," "right," "vertical," "horizontal," "inner," and "outer," etc., indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings. They are used only for the convenience of describing the invention and for simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation. Therefore, they should not be construed as limitations on the invention. Furthermore, the terms "first," "second," and "third" are used for descriptive purposes only and should not be construed as indicating or implying relative importance.

[0028] In the description of this invention, it should be noted that, unless otherwise explicitly specified and limited, the terms "installation," "connection," and "linking" should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral connection; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium; and they can refer to the internal connection of two components. Those skilled in the art can understand the specific meaning of the above terms in this invention based on the specific circumstances.

[0029] Furthermore, the technical features involved in the different embodiments of the present invention described below can be combined with each other as long as they do not conflict with each other.

[0030] Example 1

[0031] refer to Figures 1-2 This embodiment provides a laser chip optical coupling structure, including:

[0032] The light source area 100, waveguide area 200, and output area 300 are arranged in sequence.

[0033] The light source region 100 is equipped with a multimode multijunction laser, which has multiple laser emitting active regions 101. The lasers emitted by each laser emitting active region 101 may have the same or different modes. The multimode multijunction laser can be integrated with the waveguide region 200 and the output region 300 on the same waveguide chip, or it can be set independently outside the waveguide chip.

[0034] The waveguide region 200 is provided with multiple waveguide core layers 201 extending from the light source region 100 to the output region 300; the waveguide core layers 201 are adapted to guide the laser emitted by the laser emitting active region 101 into the output region 300; the mode field of the waveguide core layer 201 corresponds to and matches the mode field of the laser emitting active region 101. The corresponding matching referred to here can be the matching of a single waveguide core layer 201 to a single laser emitting active region 101, or the matching of a single waveguide core layer 201 to multiple laser emitting active regions 101 with the same horizontal position but different height positions.

[0035] The output region 300 is suitable for outputting laser light from the waveguide core layer 201. The output region 300 receives laser light from the waveguide region 200, and after beam splitting, it can be an array waveguide. By performing phase modulation on the array waveguide, the OPA function can be realized. The output region 300 can also be integrated with an optical waveguide network chip to realize large-scale high-speed photonic computing.

[0036] In this embodiment, the active laser-emitting regions 101 are arranged in a parallel array; the waveguide core layers 201 are arranged in parallel; and the width of each waveguide core layer 201 has an inverted conical or upright conical structure in the direction from the light source region 100 to the output region 300. In this embodiment, the width of each waveguide core layer 201 has an inverted conical structure in the direction from the light source region 100 to the output region 300. In other words, the width of each waveguide core layer 201 gradually increases in the direction from the light source region 100 to the output region 300; at the same time, the height of each waveguide core layer 201 remains constant in the direction from the light source region 100 to the output region 300. In some other embodiments, the width of each waveguide core layer 201 may also gradually decrease in the direction from the light source region to the output region.

[0037] The laser chip optical coupling structure provided in this embodiment includes a multimode multijunction laser in the light source region 100, which has multiple laser emitting active regions 101, enabling multimode laser emission. The mode field of the waveguide core layer 201 in the waveguide region 200 corresponds to and matches the mode field of the laser emitting active regions 101, allowing different modes of laser emitting active regions 101 to correspond to different waveguide core layers 201. Although each laser emitting active region 101 emits a single mode, multiple laser emitting active regions operate simultaneously, thereby achieving the emission of a multimode multijunction laser beam. The corresponding matching of the mode field of the waveguide core layer 201 in the waveguide region 200 with the mode field of the laser emitting active regions 101 allows for one-to-one coupling between different laser emitting active regions and the waveguide core layer, providing higher input optical power compared to a single-mode laser. The width of each waveguide core layer 201 gradually increases from the light source region 100 to the output region 300, which makes the laser coupled in the waveguide core layer 201 better confined in the optical waveguide, thereby achieving more stable optical transmission.

[0038] Example 2

[0039] refer to Figures 3-4 This embodiment provides a laser chip optical coupling structure, which differs from Embodiment 1 in that the height of each waveguide core layer 201 gradually decreases from the light source region 100 to the output region 300. In other words, each waveguide core layer 201 becomes thinner from the light source region 100 to the output region 300. The height of the highest point of each waveguide core layer 201 is greater than or equal to the height of the highest laser emitting active region 101 among the multiple laser emitting active regions 101. At the same time, the width does not change from the light source region 100 to the output region 300. In this way, the laser coupled in the waveguide core layer 201 can gradually be transformed into a standard single-waveguide fundamental mode Gaussian energy distribution, improving the utilization rate of multimode multijunction high-power lasers.

[0040] Example 3

[0041] refer to Figures 5-6This embodiment provides a laser chip optical coupling structure, which differs from Embodiments 1 and 2 in that, in this embodiment, the width of each waveguide core layer 201 has an inverted conical structure in the direction from the light source region 100 to the output region 300; and the height of each waveguide core layer 201 gradually decreases in the direction from the light source region 100 to the output region 300. In other words, the width of each waveguide core layer 201 gradually increases in the direction from the light source region 100 to the output region 300, and the height of each waveguide core layer 201 gradually decreases in the same direction. In some other embodiments, the width may also be a regular conical structure.

[0042] The laser chip optical coupling structure of this embodiment combines the features of Embodiment 1 and Embodiment 2, thus achieving a greater improvement in coupling efficiency for multimode multijunction high-power lasers compared to the former two.

[0043] Example 4

[0044] refer to Figure 7 and Figure 8 The optical coupling structure of the laser chip includes multiple arrayed laser units, each laser unit comprising: a portion of the light source region 100, a portion of the waveguide region 200, and a portion of the output region 300; Figure 7 The image shows the structure within only one laser unit. This laser unit comprises a multimode multijunction laser.

[0045] The portion of the laser unit located in the waveguide region includes a front waveguide core layer 210 and a rear waveguide core layer 220. One end of the front waveguide core layer 210 faces the multimode multijunction laser, and the other end is connected to the rear waveguide core layer 220. One end of the rear waveguide core layer 220 is connected to the front waveguide core layer 210, and the other end faces the output region 300. The interconnected front waveguide core layer 210 and rear waveguide core layer 220 form a single integrated structure.

[0046] The rear waveguide core layer 220 includes multiple rear sub-waveguide core layers, and the height of each sub-waveguide core layer matches the mode field of a corresponding front waveguide core layer. Figure 7 For example, the back waveguide core layer includes vertically arranged back sub-waveguide core layers 221, 222, and 223. In the back sub-waveguide core layers, in the direction from the self-light source region 100 to the output region 300, the length of each back sub-waveguide core layer is less than the length of the next lower back sub-waveguide core layer, but greater than the length of the next higher back sub-waveguide core layer. Figure 7 For example, the length of the downstream subwaveguide core layer 222 is less than that of the downstream subwaveguide core layer 221, but greater than that of the upstream subwaveguide core layer 223.

[0047] Further reference Figure 8The front waveguide core layer 210 includes multiple front sub-waveguide core layers 211, 212, and 213. Each front sub-waveguide core layer corresponds one-to-one with each stage in a multimode multijunction laser; each front sub-waveguide core layer is connected to a sub-waveguide core layer of a certain height in the rear waveguide core layer 220. The interconnected front and rear sub-waveguide core layers form a single integrated structure. Figure 8 For example, the highest-layer front sub-waveguide core layer 213 corresponds to the highest-layer rear sub-waveguide core layer 223, the middle-layer front sub-waveguide core layer 212 corresponds to the middle-layer rear sub-waveguide core layer 222, and the lowest-layer front sub-waveguide core layer 211 corresponds to the lowest-layer rear sub-waveguide core layer 221. The front sub-waveguide core layer 213 and the rear sub-waveguide core layer 223 are an integral structure, the front sub-waveguide core layer 212 and the rear sub-waveguide core layer 222 are an integral structure, and the front sub-waveguide core layer 211 and the rear sub-waveguide core layer 221 are an integral structure.

[0048] Thus, for lasers emitted from sheet lasers in different layers, the light in the lower-level back waveguide core layer is always coupled out of its own back waveguide core layer or into the next lower layer earlier. When the laser in the higher-level back waveguide core layer passes through its own back waveguide core layer, the laser in the lower-level back waveguide core layer has already coupled out or entered the next lower layer, avoiding interference between the two laser beams. Therefore, the lasers emitted from the active regions of each laser emitter have almost no mutual loss even if they are of different modes, which greatly improves the coupling efficiency of multimode multijunction high-power lasers.

[0049] Further reference Figure 7 The laser unit also includes multiple auxiliary waveguide core layers 230. The auxiliary waveguide core layer 230 is a directional coupler structure. Specifically, the auxiliary waveguide core layer 230 includes a front straight coupling section, a rear straight coupling section, and an S-bend coupling section connecting the front and rear straight coupling sections; the front straight coupling section is closer to the rear waveguide core layer 220, and the rear straight coupling section is farther away from the rear waveguide core layer 220. The width of the auxiliary waveguide core layer remains the same from the end facing the light source region to the end facing the output region; in other words, the widths of the front straight coupling section, the S-bend coupling section, and the rear straight coupling section are consistent. The height of the auxiliary waveguide core layer 230 is the same as the height of the lowest layer of the rear sub-waveguide core layer. The width of the auxiliary waveguide core layer 230 is the width of a single-mode waveguide, thus ensuring single-mode light transmission. The end face of each auxiliary waveguide core layer 230 facing the output region is on the same plane as the end face of the lowest layer of the rear sub-waveguide core layer 221 facing the output region.

[0050] This configuration ensures that the laser light in the lowest-level sub-waveguide core layer is sequentially coupled into the auxiliary waveguide core layer 230, and then continues to propagate to the output region 300 through the auxiliary waveguide core layer 230. This avoids interference between the optical modes of the lowest-level sub-waveguide core layer, reduces laser loss during its journey to the output region 300, and improves the coupling efficiency of the multimode multijunction laser. Figures 7-8 For example, the light from the rear waveguide core layer 221 is sequentially coupled into the auxiliary waveguide core layer 230, and then continues to be transmitted to the output region 300 through the auxiliary waveguide core layer 230. Since the optical modes enter different auxiliary waveguide core layers 230 sequentially, interference effects between them are avoided, thereby reducing the loss of the laser in the process of reaching the output region 300 and improving the coupling efficiency of the multimode multijunction laser.

[0051] Example 6

[0052] This embodiment provides a method for manufacturing the laser chip optical coupling structure of embodiments 1-4 above, including the following steps:

[0053] This forms a sequentially arranged light source region, waveguide region, and output region;

[0054] The light source region forms a multimode multijunction laser, which has multiple laser emitting active regions; the laser emitted by each laser emitting active region may have the same or different modes.

[0055] The waveguide region has multiple waveguide core layers extending from the light source region to the output region. These waveguide core layers are adapted to guide the laser emitted from the active laser-emitting region into the output region. The mode field of each waveguide core layer corresponds to and matches the mode field of the active laser-emitting region.

[0056] The output area is suitable for outputting laser light from the waveguide core layer.

[0057] Specifically, the waveguide core layer is formed through a gray etching process.

[0058] The laser chip optical coupling structure fabricated by the method described in this embodiment has a multimode multijunction laser in the light source region, which has multiple active laser emitting regions, thereby realizing the emission of multimode multijunction laser beams. The mode field of the waveguide core layer in the waveguide region corresponds and matches the mode field of the active laser emitting regions, enabling one-to-one coupling between different active laser emitting regions and the waveguide core layer. Compared with single-mode lasers, this provides higher input optical power.

[0059] The present invention has been described above through embodiments, and it is believed that those skilled in the art can understand the present invention through the above embodiments. Obviously, the above embodiments are merely examples for clear illustration and are not intended to limit the implementation. For those skilled in the art, other variations or modifications can be made based on the above description. It is neither necessary nor possible to exhaustively list all embodiments here. However, obvious variations or modifications derived therefrom are still within the protection scope of the present invention.

Claims

1. A laser chip optical coupling structure, characterized in that, include: The light source area, waveguide area, and output area are arranged in sequence; The light source region is provided with a multimode multijunction laser, and the multimode multijunction laser has multiple laser emitting active regions; the laser emitted by each of the laser emitting active regions may have the same or different modes; The waveguide region is provided with multiple waveguide core layers extending from the light source region to the output region; the waveguide core layers are adapted to guide the laser emitted from the laser emitting active region into the output region. The mode field of the waveguide core layer corresponds to and matches the mode field of the laser emission active region; The output region is adapted to output laser light from the waveguide core layer.

2. The laser chip optical coupling structure according to claim 1, characterized in that, The laser emitting active regions are arranged in a parallel array; the waveguide core layers are arranged in parallel. The width of each waveguide core layer has an inverted cone structure or a regular cone structure in the direction from the light source area to the output area.

3. The laser chip optical coupling structure according to claim 1, characterized in that, The laser emitting active regions are arranged in a parallel array; the waveguide core layers are arranged in parallel. The height of each waveguide core layer gradually decreases in the direction from the light source region to the output region.

4. The laser chip optical coupling structure according to claim 1, characterized in that, The laser emitting active regions are arranged in a parallel array; the waveguide core layers are arranged in parallel. The width of each waveguide core layer has an inverted cone or a right cone structure in the direction from the light source region to the output region; and the height of each waveguide core layer gradually decreases in the direction from the light source region to the output region.

5. The laser chip optical coupling structure according to claim 1, characterized in that, The laser chip optical coupling structure includes multiple laser units arranged in an array, and each laser unit includes: a portion of the light source region, a portion of the waveguide region, and a portion of the output region; The laser unit includes a multimode multijunction laser; the portion of the laser unit located in the waveguide region includes a front waveguide core layer and a rear waveguide core layer; one end of the front waveguide core layer faces the multimode multijunction laser, and the other end is connected to the rear waveguide core layer; one end of the rear waveguide core layer is connected to the front waveguide core layer, and the other end faces the output region; the interconnected front waveguide core layer and rear waveguide core layer are an integral structure; The back waveguide core layer includes multiple back sub-waveguide core layers arranged vertically; in the direction from the light source region to the output region, the length of each back sub-waveguide core layer is less than the length of the next lower back sub-waveguide core layer, but greater than the length of the next higher back sub-waveguide core layer.

6. The laser chip optical coupling structure according to claim 5, characterized in that, The laser unit also includes multiple auxiliary waveguide core layers; each auxiliary waveguide core layer includes a front straight coupling section and a rear straight coupling section, as well as an S-bend coupling section connecting the front straight coupling section and the rear straight coupling section; the front straight coupling section is close to the rear waveguide core layer, and the rear straight coupling section is far away from the rear waveguide core layer; The width of the auxiliary waveguide core layer remains the same from the end facing the light source region to the end facing the output region; the height of the auxiliary waveguide core layer is set to be the same as the height of the lowest layer of the rear sub-waveguide core layer in the rear waveguide core layer; the width of the auxiliary waveguide core layer is the width of a single-mode waveguide.

7. The laser chip optical coupling structure according to claim 5, characterized in that, The front waveguide core layer includes multiple front sub-waveguide core layers; each front sub-waveguide core layer corresponds one-to-one with each stage in the multimode multijunction laser; each front sub-waveguide core layer is respectively connected to a sub-waveguide core layer of a certain height in the rear waveguide core layer; the interconnected front sub-waveguide core layers and rear waveguide core layers are an integral structure.

8. A method for manufacturing a laser chip optical coupling structure, characterized in that, Includes the following steps, This forms a sequentially arranged light source region, waveguide region, and output region; The light source region forms a multimode multijunction laser, which has multiple laser emitting active regions; the laser emitted by each of the laser emitting active regions may have the same or different modes. The waveguide region forms multiple waveguide core layers extending from the light source region to the output region; the waveguide core layers are adapted to guide the laser emitted by the laser emitting active region into the output region; the mode field of the waveguide core layers corresponds to and matches the mode field of the laser emitting active region. The output region is adapted to output laser light from the waveguide core layer.

9. The method for manufacturing the laser chip optical coupling structure according to claim 8, characterized in that, The waveguide core layer is formed by a gray etching process.

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