Composition, application of composition, cleaning agent and application of cleaning agent
Through the cleaning agent formed by a specific proportion of protective agent and solvent and oxidant, the high selectivity etching of AlN to AlOx and compatibility with metal cobalt are solved, and the preparation of high-precision semiconductor devices and the recycling of compositions are realized, and the etching stability and selectivity are improved.
Patent Information
- Application Number
- CN202510370326.1
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2025-03-26
- Publication Date
- 2025-07-01
AI Technical Summary
Existing cleaning agents are difficult to achieve high selective etching of AlN to AlOx and good compatibility with metal cobalt, and cannot flexibly regulate the etching selection ratio in different application scenarios, affecting the high precision and high integration preparation of semiconductor devices.
A composition is provided, including a first protective agent and a second protective agent, combined with a solvent and an oxidizing agent to form a cleaning agent, and through the combination of azoles and benzoic acid and phthalic acid in a specific proportion, it achieves high selective etching of AlN to AlOx and compatibility with Co, both stability and recyclability.
Highly selective etching of AlOx by AlN is achieved, protecting AlOx and Co from damage, and the etch selection ratio can be flexibly regulated within a large range, suitable for the preparation of high-precision semiconductor devices, and extends the service life of the composition.