Wafer surface pollution defect detection method and device
The SNR estimation and dual threshold segmentation method enhances the detection of subtle defects on wafers by accurately distinguishing background and defect signals, addressing the challenges of varying cleanliness standards and complex background signals in dark field inspection.
Patent Information
- Application Number
- CN202510395081.8
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2025-03-31
- Publication Date
- 2025-07-15
- Estimated Expiration
- 2045-03-31
AI Technical Summary
The existing dark field detection methods face problems such as complex background signals and weak defect signals in wafer surface pollution defect detection, which leads to increased detection difficulty and is difficult to meet the requirements of semiconductor manufacturing for high precision and high efficiency.
The neighborhood SNR estimation principle is adopted, and the wafer dark field image is segmented by setting high and low thresholds. Combined with the neighborhood SNR estimation calculation, the background signal and defect signal are accurately distinguished, which improves the detection ability of subtle defects and dirty.
In a complex context, it can stably and accurately identify extremely weak defect signals, which improves the stability and efficiency of detection and meets the comprehensive requirements of industrial production.