Surface strengthening process for semiconductor wafers

By employing ozone water ultrasonic cleaning, laser treatment, and plasma deposition processes, the problems of insufficient mechanical strength and thermal stability of wafer surfaces have been solved, achieving efficient wafer surface strengthening and improving device reliability and yield.

CN120545175BActive Publication Date: 2026-05-22SHANGHAI WELNEW MICRO ELECTRONICS
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Patent Information

Application Number
CN202510700991.2
Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
Filing Date
2025-05-28
Publication Date
2026-05-22
Estimated Expiration
2045-05-28

AI Technical Summary

Technical Problem

Traditional wafer surface treatment processes suffer from problems such as insufficient mechanical strength, chemical damage, poor thermal stability, and corrosion resistance defects, making it difficult to meet the miniaturization and high integration requirements of semiconductor devices.

Method used

The wafer surface is strengthened by using ozone water ultrasonic cleaning combined with high-purity nitrogen purging, followed by laser treatment and radio frequency plasma deposition, and finally methane plasma treatment to form a dense silicon nitride layer and a dynamically cross-linked DLC network.

Benefits of technology

It significantly improves the mechanical strength, surface hardness and electrical stability of wafers, reduces surface roughness and thermal stress, and improves device reliability and yield.

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Abstract

The application relates to a surface strengthening treatment process of a semiconductor wafer and belongs to the technical field of wafer treatment. First, ozone water is used in cooperation with ultrasonic cleaning, organic pollutants are decomposed through the strong oxidizability of ozone, inorganic particulate matters are removed through ultrasonic cavitation effect, double purification is realized, and an inert atmosphere is constructed by using nitrogen blowing, so that an atomic-level clean substrate is provided for subsequent processes; second, vacuum laser shallow layer repair is carried out, quasi-molecular laser is used to induce lattice rearrangement, microcracks are eliminated, surface roughness and hardness are improved, and thermal stress deformation is avoided; subsequently, radio frequency plasma chemical vapor deposition technology is used to form a high-density amorphous silicon nitride barrier layer, so that the penetration of alkali metal ions is effectively blocked; finally, methane plasma treatment is carried out to introduce methylsilane, a dynamic cross-linking structure is formed, scratch self-repair is realized, the surface hardness after repair is improved, and the scratch resistance of the wafer is improved.
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