Zinc-dichloroimidazole coordination dense membrane and preparation method thereof

By preparing a zinc-dichloroimidazole coordination dense film on 5A zeolite, the radiation sensitivity and etching selectivity problems of positive electron beam resist films in the existing technology are solved, and high exposure sensitivity and environmentally friendly dry etching effects are achieved.

CN120630591AActive Publication Date: 2025-09-12SHANDONG UNIV OF SCI & TECH
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Patent Information

Application Number
CN202510561973.0
Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
Filing Date
2025-04-30
Publication Date
2025-09-12
Estimated Expiration
2045-04-30

AI Technical Summary

Technical Problem

The existing technology lacks film-forming precursors that have radiation sensitivity, volatility, thermal stability and layer-by-layer growth characteristics, which makes it difficult for positive electron beam resist films to have good performance in both exposure sensitivity and reactive gas etching selectivity.

Method used

A zinc-dichloroimidazole coordination dense film is used as a positive resist film and is deposited on 5A zeolite by atomic/molecular layer deposition. The film contains electron beam sensitive leaving groups and is not etched by hexafluoroacetylacetone before electron beam irradiation. After electron beam irradiation, it can be etched by hexafluoroacetylacetone, and no liquid solvent is used in the etching process.

Benefits of technology

It achieves high exposure sensitivity and reactive gas etching selectivity of the positive electron beam resist film, avoids the generation of chemical waste liquid, is environmentally friendly, and precisely controls the film thickness by alternating atomic layer deposition and molecular layer deposition to ensure uniform film texture.

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Abstract

The invention belongs to the technical field of semiconductor device manufacturing, and relates to preparation of a positive electron beam anti-corrosion film, in particular to a zinc-dichloroimidazole coordination compact film and a preparation method thereof. According to the preparation method, atomic layer deposition and molecular layer deposition are adopted for alternate deposition to form a film, and a film material contains electron beam sensitive leaving groups, is a positive anti-corrosion film, cannot be etched by hexafluoroacetylacetone when not irradiated by electron beams, can be etched by hexafluoroacetylacetone after being irradiated by the electron beams, and can be etched by hexafluoroacetylacetone after being irradiated by the electron beams. A liquid solvent is not used for film forming and etching, chemical waste liquid is not generated, environmental friendliness is achieved, the film is loaded on the 5A zeolite and has the potential for manufacturing high-precision patterns through electron beam photoetching, a potential scheme is provided for the process of depositing the positive electron beam anti-corrosion film on the silicon substrate, and the method is suitable for large-scale popularization and application. The method can solve the problems that a liquid solvent is used and the film thickness is not uniform in the film forming process of the electron beam anti-corrosion film, and has important application in the aspects of advanced semiconductor manufacturing procedures and the like.
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