Control method and device of double-pulse testing device, testing system and storage medium
By continuously sending multiple second pulses in a double-pulse test device, the IGBT device performance is tested under high temperature conditions, which solves the problem that existing devices cannot test high-temperature performance and realizes performance evaluation under high-temperature conditions.
CN120669088APending Publication Date: 2025-09-19XIAMEN KEHUA DIGITAL ENERGY TECH CO LTD
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Patent Information
- Application Number
- CN202510897936.7
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2025-07-01
- Publication Date
- 2025-09-19
AI Technical Summary
Technical Problem
Existing double-pulse test equipment cannot test the performance of IGBT devices under high temperature conditions.
Method used
After sending a first pulse to the IGBT device under test, multiple second pulses are continuously sent until the device temperature rises to the target temperature, and its switching characteristics at high temperature are measured, and switching loss is used to achieve rapid temperature rise.
Benefits of technology
The performance test of IGBT devices under high temperature conditions is realized, and the accuracy and reliability of the test are improved.
✦ Generated by Eureka AI based on patent content.
Abstract
The invention provides a control method and device of a double-pulse testing device, a testing system and a storage medium, and relates to the technical field of electronic device testing. The method comprises the following steps: sending a first pulse to a to-be-tested IGBT device; the first pulse is used for controlling the to-be-tested IGBT device to be turned off after saturation conduction; continuously sending a plurality of second pulses to the to-be-measured IGBT device until the device temperature of the to-be-measured IGBT device rises to the target temperature, and measuring the switching characteristic of the to-be-measured IGBT device at the target temperature; wherein the pulse width of the second pulse is smaller than that of the first pulse, and the to-be-tested IGBT device works in a linear region within the duration of the pulse width of the second pulse. According to the invention, the performance test of the IGBT device in the high-temperature state can be realized by using the double-pulse test device.
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