High-gain diamond logic phase inverter and preparation method thereof

By forming hydrogen terminals on a diamond substrate and depositing a ferroelectric dielectric layer, combined with photolithography and plasma treatment, a high-gain diamond logic inverter was prepared. This solves the problem of insufficient voltage gain in the existing technology and achieves high voltage gain of the logic inverter in the deep subthreshold region, meeting the needs of high-density integrated circuits.

CN120769561APending Publication Date: 2025-10-10HARBIN INST OF TECH
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Patent Information

Application Number
CN202510863171.5
Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
Filing Date
2025-06-25
Publication Date
2025-10-10

AI Technical Summary

Technical Problem

The voltage gain of existing diamond-based logic inverters is small, which cannot meet the needs of high-density and high-performance integrated circuits, and there is a lack of reliable methods to regulate the conductivity of hydrogen-terminated diamond surfaces.

Method used

Hydrogen plasma treatment is used to form a hydrogen-terminated diamond substrate, and the ferroelectric dielectric layer is deposited at low temperature using an electron beam evaporation process. The drive and load transistor structures are formed through a photolithography process, and oxygen plasma treatment is used to regulate the surface conductivity to achieve current matching.

Benefits of technology

It achieves high voltage gain of logic inverter in the deep subthreshold region, breaks through the Boltzmann limit, meets the needs of high-density integrated circuits, and is compatible with standard CMOS processes.

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Abstract

The invention discloses a high-gain diamond logic phase inverter and a preparation method thereof, and aims to solve the problem that the voltage gain of an existing logic phase inverter is relatively small. According to the high-gain diamond logic inverter, a diamond substrate is subjected to hydrotreating through hydrogen plasma to form the diamond substrate with a hydrogen terminal, a conducting channel is formed after the surface of the hydrogen terminal is in contact with air, and a first source electrode, a first drain electrode, a second source electrode and a second drain electrode are arranged on the diamond substrate. A first ferroelectric medium layer and a second ferroelectric medium layer are deposited on a diamond substrate, a first grid electrode is arranged on the first ferroelectric medium layer, and a second grid electrode is arranged on the second ferroelectric medium layer. According to the invention, an electron beam evaporation process is adopted to form an orthorhombic phase on a ferroelectric material deposited at a low temperature, the ferroelectric material has convertible ferroelectric characteristics, and ultra-steep sub-threshold swing is realized; the surface conductivity can be regulated and controlled by treating the surface of the hydrogen terminal diamond through the oxygen plasma, current matching is achieved, and the logic inverter works in a deep subthreshold region.
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