Formation method of semiconductor structure

By employing a two-step reduction process, the problem of increased resistance caused by stress migration in metal interconnect processes was solved, thereby improving the quality and reliability of the conductive layer and reducing defects such as voids.

CN120914100APending Publication Date: 2025-11-07HUA HONG SEMICON WUXI LTD +1
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Patent Information

Application Number
CN202511107937.3
Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
Filing Date
2025-08-07
Publication Date
2025-11-07

AI Technical Summary

Technical Problem

In existing technologies, stress migration failure in metal interconnect processes is related to the mismatch of thermal expansion coefficients of metal/dielectric materials, metal grain size, and defect density, leading to problems such as increased resistance or open circuits.

Method used

A two-step reduction process is adopted, with different process parameters for the first and second reduction processes. The first reduction process partially reduces the initial oxide layer, while the second reduction process completely reduces the remaining oxide layer. This avoids the introduction of reaction byproducts, improves the quality of the conductive layer, and reduces defects such as voids caused by stress migration.

Benefits of technology

It effectively reduces defects on the surface of the conductive layer, lowers the resistance caused by stress migration, and improves the quality and reliability of the conductive layer.

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Abstract

A forming method of a semiconductor structure comprises the following steps: providing a substrate; a first dielectric layer and an initial conducting layer located in the first dielectric layer are formed on the substrate, the first dielectric layer exposes the surface of the initial conducting layer, and the surface of the initial conducting layer is provided with an initial oxide layer; performing first reduction treatment on the initial oxide layer to form an oxide layer; and performing second reduction treatment on the oxide layer to form a conductive layer, the process of the first reduction treatment being different from the process of the second reduction treatment. The quality of the conductive layer formed by the method is improved, and stress migration is improved.
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