Method and device for automatically exchanging heat based on semiconductor, and wearable device

By using semiconductor heat exchange technology, temperature data is collected in real time and the exchange rate of the cold medium is analyzed to generate temperature control parameters. This solves the problems of heavy cooling devices and high electrical conductivity risks for outdoor power workers, and achieves long-lasting cooling and heat preservation, improving work safety and comfort.

CN122258522APending Publication Date: 2026-06-23GUANGDONG NANDIAN SMART ENERGY TECHNOLOGY CO LTD
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
GUANGDONG NANDIAN SMART ENERGY TECHNOLOGY CO LTD
Filing Date
2026-02-11
Publication Date
2026-06-23

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Abstract

The application relates to the technical field of semiconductor temperature control, and discloses a processing method and device for automatic heat exchange based on a semiconductor and a wearable device, which realizes intelligent dynamic temperature adjustment and long-time temperature preservation, improves human body temperature control accuracy, can continuously cool in summer, effectively reduces the sweating rate of a user, can heat in winter, significantly improves the thermal and wet comfort of a human body surface, reduces physical discomfort in a high-temperature or low-temperature environment for a long time, reduces the risk of heatstroke or frostbite, and thus improves work concentration and efficiency; through optimization of the airtightness of liquid cooling circulation and the safety design of semiconductor temperature adjustment, the electric leakage condition is reduced, and the personal safety of an operator during operation is effectively ensured.
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Description

Technical Field

[0001] This invention relates to the field of semiconductor temperature control technology, and in particular to a processing method, apparatus and wearable device for automatic heat exchange based on semiconductors. Background Technology

[0002] With the increasing severity of global warming, many countries and regions are experiencing a year-on-year increase in average daily summer temperatures. Taking South China as an example, summers are generally longer, characterized by high temperatures, high humidity, and little or no wind. Power industry workers often need to perform long hours in these high-temperature environments. Due to the inability to effectively dissipate heat, they experience increased heat accumulation and elevated body temperatures. In severe cases, this can lead to loss of appetite, difficulty concentrating, and even heatstroke or heat exhaustion, increasing the risk and frequency of personal accidents and posing significant threats to personal safety and power supply.

[0003] Currently, to enable outdoor power workers to effectively dissipate heat, cooling devices are often installed on their clothing to achieve heat absorption and cooling. Based on the cooling medium, these methods are currently classified into four types: gas cooling, phase change material cooling, liquid cooling, and evaporative cooling. Specifically: (1) Gas cooling mainly relies on the fan blowing in low-temperature, dry air to accelerate air circulation, thereby speeding up the evaporation of sweat on the body surface. The evaporation of sweat also removes excess heat from the body surface, thus achieving a cooling effect. However, this method has poor air cooling performance. The outdoor ambient temperature is high, and the air temperature blown in by the fan is already very high, resulting in poor convective heat transfer. In particular, it is not suitable for the specific long-sleeved clothing requirements of power workers, as the clothing cannot be changed, sweat is difficult to evaporate, and the device is easily torn.

[0004] (2) Phase change material cooling mainly removes excess heat from the human body surface through the latent heat of phase change during the phase change process of the phase change material. In particular, water has a large latent heat of phase change and low cost. Most ice packs are used as phase change materials on the market. However, due to the large mass and high hardness of ice, it will affect the wearer's mobility. Moreover, the cooling effect of ice is significant in the early stage, which can easily make people uncomfortable, while the cooling effect is poor in the later stage and cannot effectively cool down. It is also not suitable for the cooling needs of power personnel.

[0005] (3) Liquid cooling mainly involves arranging pipes inside the clothing. Excess heat from the body surface is removed by a low-temperature circulating liquid (usually water) within the pipes combined with ice packs as the cooling source. The heated circulating liquid re-enters the cooling equipment to be cooled, thus starting the next cycle. This method can effectively meet the clothing needs of power workers to a certain extent. However, to ensure a long-term cooling effect, in addition to sufficient liquid circulating medium, the device requires additional cooling sources, resulting in a large overall weight, inconvenience in wearing, and short refrigerant lifespan. Furthermore, this solution requires frequent replacement of ice packs and addition of circulating liquid (water), and the circulating liquid is not stored in a sealed manner, which can easily lead to electrical conductivity risks. Therefore, it is also unsuitable for the cooling needs of power workers during operations.

[0006] (4) Evaporative cooling is a passive heat dissipation system, which can be regarded to some extent as wet clothes. Although ordinary textile clothes can have a very good cooling effect after being wet, the water stains and the resulting stickiness of the clothes will cause inconvenience to the wearer's normal work. However, power outdoor workers must also ensure that their clothes are dry, otherwise there is a risk of electric shock. Therefore, it is still not suitable for power outdoor work.

[0007] Therefore, it is evident that the aforementioned methods either fail to provide long-term cooling or pose a risk of electric shock, making them unsuitable for outdoor power workers performing electrical tasks. Consequently, proposing a new temperature control method that combines the advantages of the aforementioned methods—ensuring both long-term cooling and the safety of outdoor power workers—is of paramount importance. Summary of the Invention

[0008] This invention provides a method, apparatus, and wearable device for automatic heat exchange based on semiconductors, which can ensure long-term cooling and temperature reduction while ensuring the safety of outdoor power workers.

[0009] The first aspect of this invention discloses a method for automatic heat exchange based on semiconductors, the method comprising: Temperature data is collected during the operation of a semiconductor wearable device worn on a target person, the semiconductor wearable device being used to regulate the body temperature of the target person; Based on the collected temperature data corresponding to the semiconductor wearable device, the heat exchange rate of the semiconductor temperature control device of the semiconductor wearable device to the cold medium in the liquid cooling circulation channel of the semiconductor wearable device is analyzed. The cold medium in the liquid cooling circulation channel is used to exchange heat with the human body of the target person. Based on the heat exchange rate corresponding to the cold medium, the temperature control parameters of the semiconductor temperature control device are generated, and based on the temperature control parameters of the semiconductor temperature control device, the semiconductor temperature control device is controlled to perform heat exchange operation with the cold medium in the liquid cooling circulation channel.

[0010] As an optional implementation, in a first aspect of the present invention, the semiconductor temperature control device is provided with a corresponding heat exchange channel, the heat exchange channel being used for the cold medium in the liquid cooling circulation channel to flow from the first end of the heat exchange channel to the second end of the heat exchange channel for heat exchange; The temperature data collected during the operation of the semiconductor wearable device worn on the target person includes: When the semiconductor wearable device is worn on the target person, the temperature of the first cold medium in the liquid cooling circulation channel is collected by the temperature monitor set on the first end of the heat exchange channel when the cold medium passes through the first end, and the temperature of the second cold medium when the cold medium passes through the second end is collected by the temperature monitor set on the second end of the heat exchange channel. The temperature of the first cold medium at the first end and the temperature of the second cold medium at the second end are determined as the temperature data during the operation of the semiconductor wearable device.

[0011] As an optional implementation, in a first aspect of the present invention, the step of analyzing the heat exchange rate of the semiconductor temperature control device of the semiconductor wearable device to the cooling medium in the liquid cooling circulation channel of the semiconductor wearable device based on the collected temperature data corresponding to the semiconductor wearable device includes: The length of the heat exchange channel and the flow velocity of the cold medium in the heat exchange channel are obtained, and the flow time required for the cold medium to travel from the first end to the second end is analyzed based on the length of the heat exchange channel and the flow velocity of the cold medium in the heat exchange channel. Calculate the temperature difference between the first cold medium temperature at the first end and the second cold medium temperature at the second end, and determine the first heat exchange rate of the cold medium after passing through the heat exchange channel based on the cold medium temperature difference and the flow time. The medium type of the cold medium and the mass of the cold medium flowing through the first end or the second end per unit time are obtained, and the second heat exchange rate of the cold medium after passing through the heat exchange channel is determined based on the medium type and the mass of the cold medium. The heat exchange rate of the cold medium in the semiconductor temperature control device is determined based on the first heat exchange rate and the second heat exchange rate of the cold medium.

[0012] As an optional implementation, in a first aspect of the present invention, the method further includes: The current parameters of the semiconductor temperature control device are monitored during the process of the cold medium in the liquid cooling circulation channel passing through the heat exchange channel, and the current monitoring results of the semiconductor temperature control device are obtained. Based on the current monitoring results of the semiconductor temperature control device, it is determined whether a correction operation needs to be performed on the heat exchange rate corresponding to the cold medium; when it is determined that no correction operation needs to be performed on the heat exchange rate corresponding to the cold medium, the operation of generating the temperature control parameters of the semiconductor temperature control device based on the heat exchange rate corresponding to the cold medium is performed. When it is determined that a correction operation needs to be performed on the heat exchange rate corresponding to the cold medium, the correction operation is performed on the heat exchange rate corresponding to the cold medium according to the current monitoring result of the semiconductor temperature control device, and the operation of generating the temperature control parameters of the semiconductor temperature control device according to the heat exchange rate corresponding to the cold medium is performed.

[0013] As an optional implementation, in a first aspect of the present invention, determining whether a correction operation needs to be performed on the heat exchange rate corresponding to the cooling medium based on the current monitoring result of the semiconductor temperature control device includes: By analyzing the current monitoring results of the semiconductor temperature control device, the current fluctuation of the semiconductor temperature control device during the process of the cold medium in the liquid cooling circulation channel passing through the heat exchange channel is obtained. Based on the current fluctuation of the semiconductor temperature control device, determine all current peaks and valleys whose current fluctuation amplitude is greater than or equal to a preset current fluctuation amplitude, as well as the fluctuation value of each current peak and valley. Based on the fluctuation value of each current peak and valley, determine whether there is a current peak and valley whose fluctuation value is greater than or equal to a preset fluctuation value. When it is determined that there is, it is determined that a correction operation needs to be performed on the heat exchange rate corresponding to the cold medium.

[0014] As an optional implementation, in a first aspect of the present invention, generating the temperature control parameters of the semiconductor temperature control device based on the heat exchange rate corresponding to the cooling medium includes: Based on the heat exchange rate corresponding to the cold medium and multiple preset heat exchange rate intervals, the target interval of the heat exchange rate corresponding to the cold medium in all preset heat exchange rate intervals is analyzed to obtain heat exchange analysis results. Based on the heat exchange analysis results, a temperature control method matching the target range is determined, and based on the temperature control method, temperature control parameters of the semiconductor temperature control device are generated. The temperature control parameters of the semiconductor temperature control device include liquid pump control parameters of the semiconductor temperature control device, and the liquid pump control parameters include current magnitude control parameters.

[0015] As an optional implementation, in a first aspect of the present invention, all the preset heat exchange rate intervals include a first preset heat exchange rate interval, a second preset heat exchange rate interval, and a third preset heat exchange rate interval, wherein the rates of the first preset heat exchange rate interval, the second preset heat exchange rate interval, and the third preset heat exchange rate interval are sequentially reduced. When the target range is the first preset heat exchange rate range, the current corresponding to the current magnitude control parameter is the first current; when the target range is the second preset heat exchange rate range, the current corresponding to the current magnitude control parameter is the second current; when the target range is the third preset heat exchange rate range, the current corresponding to the current magnitude control parameter is the third current, and the first current, the second current, and the third current decrease sequentially.

[0016] A second aspect of the present invention discloses a processing apparatus for automatic heat exchange based on semiconductors, the apparatus comprising: The data acquisition module is used to acquire temperature data during the operation of a semiconductor wearable device worn on a target person, wherein the semiconductor wearable device is used to regulate the body temperature of the target person. The analysis module is used to analyze the heat exchange rate of the semiconductor temperature control device of the semiconductor wearable device to the cold medium in the liquid cooling circulation channel of the semiconductor wearable device based on the collected temperature data corresponding to the semiconductor wearable device. The cold medium in the liquid cooling circulation channel is used to exchange heat with the human body of the target person. The generation module is used to generate the temperature control parameters of the semiconductor temperature control device according to the heat exchange rate corresponding to the cold medium. The control module is used to control the semiconductor temperature control device to perform heat exchange operations with the cold medium in the liquid cooling circulation channel according to the temperature control parameters of the semiconductor temperature control device.

[0017] As an optional implementation, in a second aspect of the present invention, the semiconductor temperature control device is provided with a corresponding heat exchange channel, the heat exchange channel being used for the cold medium in the liquid cooling circulation channel to flow from the first end of the heat exchange channel to the second end of the heat exchange channel for heat exchange; The specific method by which the acquisition module acquires temperature data during the operation of the semiconductor wearable device worn on the target person includes: When the semiconductor wearable device is worn on the target person, the temperature of the first cold medium in the liquid cooling circulation channel is collected by the temperature monitor set on the first end of the heat exchange channel when the cold medium passes through the first end, and the temperature of the second cold medium when the cold medium passes through the second end is collected by the temperature monitor set on the second end of the heat exchange channel. The temperature of the first cold medium at the first end and the temperature of the second cold medium at the second end are determined as the temperature data during the operation of the semiconductor wearable device.

[0018] As an optional implementation, in a second aspect of the present invention, the analysis module analyzes, based on the collected temperature data corresponding to the semiconductor wearable device, the specific method by which the semiconductor temperature control device of the semiconductor wearable device analyzes the heat exchange rate of the cooling medium in the liquid cooling circulation channel of the semiconductor wearable device, including: The length of the heat exchange channel and the flow velocity of the cold medium in the heat exchange channel are obtained, and the flow time required for the cold medium to travel from the first end to the second end is analyzed based on the length of the heat exchange channel and the flow velocity of the cold medium in the heat exchange channel. Calculate the temperature difference between the first cold medium temperature at the first end and the second cold medium temperature at the second end, and determine the first heat exchange rate of the cold medium after passing through the heat exchange channel based on the cold medium temperature difference and the flow time. The medium type of the cold medium and the mass of the cold medium flowing through the first end or the second end per unit time are obtained, and the second heat exchange rate of the cold medium after passing through the heat exchange channel is determined based on the medium type and the mass of the cold medium. The heat exchange rate of the cold medium in the semiconductor temperature control device is determined based on the first heat exchange rate and the second heat exchange rate of the cold medium.

[0019] As an optional implementation, in a second aspect of the invention, the apparatus further includes: The monitoring module is used to monitor the current parameters of the semiconductor temperature control device during the process of the cold medium in the liquid cooling circulation channel passing through the heat exchange channel, and to obtain the current monitoring results of the semiconductor temperature control device. The judgment module is used to determine whether it is necessary to perform a correction operation on the heat exchange rate corresponding to the cold medium based on the current monitoring result of the semiconductor temperature control device; when it is determined that it is not necessary to perform a correction operation on the heat exchange rate corresponding to the cold medium, the generation module is triggered to perform the operation of generating the temperature control parameters of the semiconductor temperature control device based on the heat exchange rate corresponding to the cold medium. The correction module is used to perform a correction operation on the heat exchange rate corresponding to the cold medium according to the current monitoring result of the semiconductor temperature control device when it is determined that a correction operation needs to be performed on the heat exchange rate corresponding to the cold medium, and to trigger the generation module to perform the operation of generating the temperature control parameters of the semiconductor temperature control device according to the heat exchange rate corresponding to the cold medium.

[0020] As an optional implementation, in a second aspect of the present invention, the specific method by which the determining module determines whether a correction operation needs to be performed on the heat exchange rate corresponding to the cooling medium based on the current monitoring result of the semiconductor temperature regulating device includes: By analyzing the current monitoring results of the semiconductor temperature control device, the current fluctuation of the semiconductor temperature control device during the process of the cold medium in the liquid cooling circulation channel passing through the heat exchange channel is obtained. Based on the current fluctuation of the semiconductor temperature control device, determine all current peaks and valleys whose current fluctuation amplitude is greater than or equal to a preset current fluctuation amplitude, as well as the fluctuation value of each current peak and valley. Based on the fluctuation value of each current peak and valley, determine whether there is a current peak and valley whose fluctuation value is greater than or equal to a preset fluctuation value. When it is determined that there is, it is determined that a correction operation needs to be performed on the heat exchange rate corresponding to the cold medium.

[0021] As an optional implementation, in a second aspect of the invention, the specific method by which the generating module generates the temperature control parameters of the semiconductor temperature control device based on the heat exchange rate corresponding to the cold medium includes: Based on the heat exchange rate corresponding to the cold medium and multiple preset heat exchange rate intervals, the target interval of the heat exchange rate corresponding to the cold medium in all preset heat exchange rate intervals is analyzed to obtain heat exchange analysis results. Based on the heat exchange analysis results, a temperature control method matching the target range is determined, and based on the temperature control method, temperature control parameters of the semiconductor temperature control device are generated. The temperature control parameters of the semiconductor temperature control device include liquid pump control parameters of the semiconductor temperature control device, and the liquid pump control parameters include current magnitude control parameters.

[0022] As an optional implementation, in a second aspect of the present invention, all the preset heat exchange rate intervals include a first preset heat exchange rate interval, a second preset heat exchange rate interval, and a third preset heat exchange rate interval, wherein the rates of the first preset heat exchange rate interval, the second preset heat exchange rate interval, and the third preset heat exchange rate interval are sequentially downgraded. When the target range is the first preset heat exchange rate range, the current corresponding to the current magnitude control parameter is the first current; when the target range is the second preset heat exchange rate range, the current corresponding to the current magnitude control parameter is the second current; when the target range is the third preset heat exchange rate range, the current corresponding to the current magnitude control parameter is the third current, and the first current, the second current, and the third current decrease sequentially.

[0023] A third aspect of the present invention discloses another processing apparatus for automatic heat exchange based on semiconductors, the apparatus comprising: Memory containing executable program code; A processor coupled to the memory; The processor calls the executable program code stored in the memory to execute some or all of the steps in the semiconductor-based automatic heat exchange processing method according to any of the first aspects of the present invention.

[0024] The fourth aspect of the present invention discloses a semiconductor wearable device, the semiconductor wearable device including a device body and a temperature control device disposed on the device body, wherein the temperature control device includes a processing device for automatic heat exchange based on semiconductor as described in any of the second or third aspects of the present invention, and is used to perform some or all of the steps in the processing method for automatic heat exchange based on semiconductor as described in any of the first aspects of the present invention.

[0025] Compared with the prior art, the present invention has the following beneficial effects: In this embodiment of the invention, temperature data of a semiconductor wearable device worn on a target person during operation is collected. The semiconductor wearable device is used to regulate the body temperature of the target person. Based on the collected temperature data corresponding to the semiconductor wearable device, the heat exchange rate between the semiconductor temperature regulating device and the cold medium in the liquid cooling circulation channel of the semiconductor wearable device is analyzed. The cold medium in the liquid cooling circulation channel is used to exchange heat with the body of the target person. Based on the heat exchange rate corresponding to the cold medium, temperature regulation control parameters of the semiconductor temperature regulating device are generated, and based on the temperature regulation control parameters of the semiconductor temperature regulating device, the semiconductor temperature regulating device is controlled to perform heat exchange operation with the cold medium in the liquid cooling circulation channel. As can be seen, by implementing this invention, real-time acquisition of temperature data from semiconductor wearable devices and dynamic analysis of the heat exchange rate of the refrigerant in the liquid cooling circulation channel, precise temperature control parameters are generated and the semiconductor temperature control device and the refrigerant are controlled to perform heat exchange. This achieves intelligent dynamic temperature regulation and long-term heat preservation, improving the accuracy of human body temperature control. It can continuously cool down in summer, effectively reducing the user's sweating rate, and provide heating and warmth in winter, significantly improving the thermal and humid comfort of the human body surface. For outdoor workers, such as power workers, long-term stable temperature control reduces physical discomfort in high or low temperature environments, lowers the risk of heatstroke or frostbite, and thus improves work focus and efficiency. Furthermore, by optimizing the airtightness of the liquid cooling circulation and the safety design of the semiconductor temperature control, the occurrence of leakage is greatly reduced, especially for special groups such as outdoor power workers, effectively ensuring the personal safety of workers during operation. Attached Figure Description

[0026] To more clearly illustrate the technical solutions in the embodiments of the present invention, the accompanying drawings used in the description of the embodiments will be briefly introduced below. Obviously, the accompanying drawings described below are only some embodiments of the present invention. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0027] Figure 1 This is a schematic flowchart of a semiconductor-based automatic heat exchange processing method disclosed in an embodiment of the present invention; Figure 2 This is a schematic diagram of the structure of a semiconductor top disclosed in an embodiment of the present invention; Figure 3 This is a schematic flowchart of another method for automatic heat exchange based on semiconductors disclosed in an embodiment of the present invention; Figure 4 This is a schematic diagram of the structure of a semiconductor-based automatic heat exchange processing device disclosed in an embodiment of the present invention; Figure 5This is a schematic diagram of another processing device for automatic heat exchange based on semiconductors disclosed in an embodiment of the present invention; Figure 6 This is a schematic diagram of another processing device for automatic heat exchange based on semiconductors, as disclosed in an embodiment of the present invention. Detailed Implementation

[0028] To enable those skilled in the art to better understand the present invention, the technical solutions of the present invention will be clearly and completely described below with reference to the accompanying drawings of the embodiments of the present invention. Obviously, the described embodiments are only some embodiments of the present invention, and not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of the present invention.

[0029] The terms "first," "second," etc., used in the specification, claims, and accompanying drawings of this invention are used to distinguish different objects, not to describe a specific order. Furthermore, the terms "comprising" and "having," and any variations thereof, are intended to cover non-exclusive inclusion. For example, a process, method, apparatus, product, or end that includes a series of steps or units is not limited to the listed steps or units, but may optionally include steps or units not listed, or may optionally include other steps or units inherent to these processes, methods, products, or ends.

[0030] In this document, the term "embodiment" means that a particular feature, structure, or characteristic described in connection with an embodiment may be included in at least one embodiment of the invention. The appearance of this phrase in various places throughout the specification does not necessarily refer to the same embodiment, nor is it a separate or alternative embodiment mutually exclusive with other embodiments. It will be explicitly and implicitly understood by those skilled in the art that the embodiments described herein can be combined with other embodiments.

[0031] This invention discloses a processing method, apparatus, and wearable device for automatic heat exchange based on semiconductors. By collecting temperature data from the semiconductor wearable device in real time, dynamically analyzing the heat exchange rate of the refrigerant in the liquid cooling circulation channel, generating precise temperature control parameters, and controlling the semiconductor temperature control device to perform heat exchange with the refrigerant, intelligent dynamic temperature regulation and long-term heat preservation are achieved. This improves the accuracy of human body temperature control, enabling continuous cooling in summer to effectively reduce user sweating, and providing heating and warmth in winter, significantly improving the thermal and moisture comfort of the human body. For outdoor workers, such as power workers, long-term stable temperature control reduces physical discomfort in high or low temperature environments, lowers the risk of heatstroke or frostbite, and thus improves work focus and efficiency. Furthermore, by optimizing the airtightness of the liquid cooling circulation and the safety design of the semiconductor temperature control, the occurrence of leakage is significantly reduced, especially for special groups such as outdoor power workers, effectively ensuring the personal safety of workers during operations. Detailed descriptions follow.

[0032] Example 1 Please see Figure 1 , Figure 1 This is a schematic flowchart of a semiconductor-based automatic heat exchange processing method disclosed in an embodiment of the present invention. Figure 1 The described method can be applied to any scenario requiring body temperature regulation and involving the wearing of semiconductor wearable devices, such as outdoor power work scenarios. These semiconductor wearable devices can include clothing such as semiconductor jackets and / or semiconductor trousers and / or semiconductor hats and / or semiconductor gloves and / or semiconductor shoes; for example, a semiconductor jacket could be a vest. Figure 1 As shown, the method may include the following steps: 101. Collect temperature data during the operation of a semiconductor wearable device worn on a target person, which is used to regulate the body temperature of the target person.

[0033] In this embodiment of the invention, the heat dissipation of the target person's body will cause a temperature change in the semiconductor wearable device. Since the semiconductor wearable device can change the temperature, the body temperature of the target person can be regulated by the semiconductor wearable device.

[0034] In this embodiment of the invention, the semiconductor temperature control device is provided with a corresponding heat exchange channel. The heat exchange channel is used for the cold medium in the liquid cooling circulation channel to flow from the first end of the heat exchange channel to the second end of the heat exchange channel for heat exchange. Among them, temperature data collected during the operation of the semiconductor wearable device worn on the target person includes: When the semiconductor wearable device is worn on the target person, the temperature of the first cold medium in the liquid cooling circulation channel is collected by the temperature monitor set on the first end of the heat exchange channel when the cold medium passes through the first end, and the temperature of the second cold medium when the cold medium passes through the second end is collected by the temperature monitor set on the second end of the heat exchange channel. The temperature of the first cold medium at the first end and the temperature of the second cold medium at the second end are determined as the temperature data during the operation of the semiconductor wearable device.

[0035] In this embodiment of the invention, optionally, the semiconductor wearable device is provided with a liquid cooling circulation channel (module). Optionally, the liquid cooling circulation channel is set up in a closed-loop refrigerant circulation manner, eliminating the need for frequent replacement of the refrigerant and allowing for unlimited reuse, further ensuring the safety of the target personnel. Optionally, the liquid cooling circulation channel can be arranged in any manner or direction, such as... Figure 2 As shown, Figure 2 This is a schematic diagram of the structure of a semiconductor overcoat disclosed in an embodiment of the present invention. Figure 2 As shown, the liquid cooling circulation channel is arranged in a meandering manner parallel to the body. The liquid cooling circulation channel is used to transport a cooling medium, which is used to exchange heat with the target personnel.

[0036] In this embodiment of the invention, optionally, the semiconductor temperature control device can be any device capable of controlling temperature, such as a thermoelectric cooler. The semiconductor temperature control device can be placed at any location within the semiconductor wearable device, and the number can be greater than or equal to one.

[0037] As can be seen, the embodiments of the present invention can also improve the accuracy of temperature data acquisition during the operation of semiconductor wearable devices by setting temperature monitors at both ends of the heat exchange channel of the semiconductor temperature control device, thereby improving the heat exchange efficiency of the cold medium and further improving the accuracy of the generation of temperature control parameters of the semiconductor temperature control device, so as to more accurately perform heat exchange of the cold medium and realize the dynamic temperature control accuracy of the semiconductor wearable device.

[0038] 102. Based on the collected temperature data corresponding to the semiconductor wearable device, analyze the heat exchange rate of the semiconductor temperature control device of the semiconductor wearable device to the cold medium in the liquid cooling circulation channel of the semiconductor wearable device. The cold medium in the liquid cooling circulation channel is used to exchange heat with the target person's body.

[0039] 103. Based on the heat exchange rate corresponding to the cold medium, generate the temperature control parameters of the semiconductor temperature control device, and based on the temperature control parameters of the semiconductor temperature control device, control the semiconductor temperature control device to perform heat exchange operation with the cold medium in the liquid cooling circulation channel.

[0040] It is evident that implementation Figure 1 The described semiconductor-based automatic heat exchange processing method collects real-time temperature data from wearable semiconductor devices, dynamically analyzes the heat exchange rate of the refrigerant in the liquid cooling circulation channel, generates precise temperature control parameters, and controls the semiconductor temperature control device to perform heat exchange with the refrigerant. This achieves intelligent dynamic temperature regulation and long-term heat preservation, improving the accuracy of human body temperature control. It can continuously cool down in summer, effectively reducing user sweating, and provide heating and warmth in winter, significantly improving the thermal and moisture comfort of the human body. For outdoor workers, such as power workers, long-term stable temperature control reduces physical discomfort in high or low temperature environments, lowers the risk of heatstroke or frostbite, and thus improves work focus and efficiency. Furthermore, by optimizing the airtightness of the liquid cooling circulation and the safety design of the semiconductor temperature control, the occurrence of leakage is greatly reduced, especially for special groups such as outdoor power workers, effectively ensuring the personal safety of workers during operation.

[0041] In this embodiment of the invention, optionally, based on the collected temperature data corresponding to the semiconductor wearable device, the heat exchange rate of the semiconductor temperature control device of the semiconductor wearable device to the cooling medium in the liquid cooling circulation channel of the semiconductor wearable device is analyzed, including: The length of the heat exchange channel and the flow velocity of the cold medium in the heat exchange channel are obtained. Based on the length of the heat exchange channel and the flow velocity of the cold medium in the heat exchange channel, the flow time required for the cold medium to travel from the first end to the second end is analyzed. Calculate the temperature difference between the first cold medium temperature at the first end and the second cold medium temperature at the second end, and determine the first heat exchange rate of the cold medium after passing through the heat exchange channel based on the cold medium temperature difference and the flow time. Obtain the type of cold medium and the mass of cold medium flowing through the first or second end per unit time, and determine the second heat exchange rate of the cold medium after passing through the heat exchange channel based on the type of cold medium and the mass of the cold medium. The heat exchange rate of the cold medium in the semiconductor temperature control device is determined based on the first heat exchange rate and the second heat exchange rate of the cold medium.

[0042] In this embodiment of the invention, optionally, the flow velocity can be collected by a liquid flow meter, and the mass of the cold medium can be analyzed based on the flow velocity and the density of the cold medium. Also optionally, the type of cold medium can include water, oil, or a mixture of both, as long as it can perform heat conduction.

[0043] In this embodiment of the invention, optionally, a higher ratio between the temperature difference of the cold medium and the flow time indicates a higher first heat exchange rate. Based on the type of the cold medium, the specific heat capacity and density of the cold medium are determined, and the mass of the cold medium is determined based on the density and flow velocity. Then, based on the mass of the cold medium, its specific heat capacity, and the temperature difference, a second heat exchange rate is determined, wherein the heat exchange rate is proportional to these three factors. Finally, the sum of the product of the first heat exchange rate multiplied by its corresponding heat exchange coefficient and the product of the second heat exchange rate multiplied by its corresponding heat exchange coefficient is taken as the heat exchange rate corresponding to the cold medium of the semiconductor temperature control device, wherein the sum of the two heat exchange coefficients is equal to 1, and the former is less than the latter.

[0044] As can be seen, this invention, by collecting refrigerant temperature data at both ends of the heat exchange channel in real time and combining it with the refrigerant flow time, medium type, and mass, accurately calculates the heat exchange rate. It integrates the wide-range cooling capacity of liquid cooling circulation with the high efficiency of semiconductor refrigeration, thereby improving the accuracy of temperature control parameter analysis and further enhancing the dynamic temperature control accuracy of the semiconductor temperature control device. This solves the pain points of traditional semiconductor cooling (small cooling range), liquid cooling (large weight), and the risk of electrical conductivity. For outdoor power workers, the closed-loop refrigerant circulation achieves long-lasting cooling, effectively reducing sweating, improving body surface thermal and humidity comfort, and enhancing work focus and efficiency. Simultaneously, it eliminates the need for frequent refrigerant replacements, making the device portable and lightweight, without affecting operational flexibility. Furthermore, the closed-loop circulation reduces the risk of electrical conductivity caused by refrigerant overflow, significantly improving the working experience and safety of field power workers.

[0045] In an optional embodiment, the method may further include the following steps: The temperature of the semiconductor wearable device is monitored in real time by temperature sensors at each position of the liquid cooling circulation channel of the semiconductor wearable device worn on the target person, and the temperature monitoring result of each position of the liquid cooling circulation channel per unit time is obtained. Based on the temperature monitoring results at each position of the liquid cooling circulation channel, the body temperature monitoring results of the semiconductor wearable device for the target person per unit time are determined. Based on the body temperature monitoring results of the semiconductor wearable device, the heat exchange rate of the cold medium is adjusted to obtain the adjusted heat exchange rate. Then, the above-mentioned operation of generating the temperature control parameters of the semiconductor temperature control device based on the heat exchange rate of the cold medium is performed.

[0046] In this embodiment of the invention, optionally, such as Figure 2As shown, temperature sensors are installed at multiple locations along the liquid cooling circulation channel. Optionally, more temperature sensors can be installed for key body parts of the target person. Each location corresponds to a specific body part, and temperature data is collected by the temperature sensors at those locations. The resulting temperature monitoring data is used to characterize the body temperature of the corresponding body part. Further, as... Figure 2 As shown, it also includes a semiconductor heat dissipation device, a control switch, a power bank, and a temperature monitor, which are electrically connected in sequence. The semiconductor heat dissipation device is used to dissipate the heat absorbed by the semiconductor temperature control device. The temperature monitor is used to monitor the temperature of the semiconductor wearable device. In addition to the temperature sensor set on the liquid cooling circulation channel, which monitors the temperature, there are two temperature monitoring methods, and the average value can be taken. The control switch is used to control the operation of the semiconductor wearable device, and the power bank is used to provide power for the entire semiconductor wearable device.

[0047] As can be seen, this optional embodiment can also collect temperature monitoring results per unit time by using temperature sensors at multiple locations on the liquid cooling circulation channel to determine the temperature monitoring results of the semiconductor wearable device for the human body per unit time. This improves the accuracy of the temperature monitoring results of the semiconductor wearable device and adjusts the heat exchange rate obtained above based on it. This reduces the situation where only the heat exchange channel and the nearby cold medium are considered, so as to achieve a comprehensive consideration of the heat exchange of the cold medium. This further improves the accuracy and reliability of the determination of the heat exchange rate of the cold medium, thereby helping to further improve the accuracy and reliability of heat exchange, and thus helping to further improve the temperature control accuracy of the semiconductor wearable device.

[0048] In this embodiment of the invention, optionally, the temperature control parameters of the semiconductor temperature control device are generated based on the heat exchange rate corresponding to the cold medium, including: Based on the heat exchange rate corresponding to the cold medium and multiple preset heat exchange rate intervals, the target interval of the heat exchange rate corresponding to the cold medium in all preset heat exchange rate intervals is analyzed to obtain the heat exchange analysis results. Based on the heat exchange analysis results, a temperature control method matching the target range is determined. Then, based on this method, temperature control parameters for the semiconductor temperature control device are generated. These parameters include liquid pump control parameters, which include current magnitude control parameters (higher current indicates higher power). Furthermore, current direction control parameters are also included. Additionally, control parameters for the semiconductor heat dissipation device, such as PWM duty cycle, can be further included; a higher duty cycle indicates higher power.

[0049] In this embodiment of the invention, optionally, all preset heat exchange rate intervals include a first preset heat exchange rate interval, a second preset heat exchange rate interval, and a third preset heat exchange rate interval, and the rates of the first preset heat exchange rate interval, the second preset heat exchange rate interval, and the third preset heat exchange rate interval are sequentially downgraded. When the target range is the first preset heat exchange rate range, the current corresponding to the current magnitude control parameter is the first current, and the PWM duty cycle is the first duty cycle; when the target range is the second preset heat exchange rate range, the current corresponding to the current magnitude control parameter is the second current, and the PWM duty cycle is the second duty cycle; when the target range is the third preset heat exchange rate range, the current corresponding to the current magnitude control parameter is the third current, and the PWM duty cycle is the third duty cycle, and the first current, second current, and third current decrease sequentially, as do the first duty cycle, second duty cycle, and third duty cycle.

[0050] As can be seen, the embodiments of the present invention can also dynamically generate multi-dimensional temperature control parameters by matching the heat exchange rate of the cooling medium with a preset range, so as to achieve precise and intelligent coordinated regulation; adjust the liquid pump current and semiconductor heat dissipation PWM duty cycle according to the heat exchange rate (high, medium, low), with the current and duty cycle decreasing sequentially as the rate decreases, ensuring strong cooling under high load and energy-saving operation under low load, reducing energy waste; for users such as those engaged in outdoor power operations, the dynamic adaptation strategy can continuously maintain a comfortable body surface temperature, significantly reduce sweating, and improve work focus and efficiency; graded parameter control extends the equipment's battery life, adapting to long-term field work scenarios without frequent charging; and by adjusting according to actual conditions, it reduces current or power fluctuations, reducing the risk of equipment overload; semiconductor heat dissipation PWM control ensures stable system operation and reduces overheating failures.

[0051] In this embodiment of the invention, optionally, controlling the semiconductor temperature control device to perform a heat exchange operation with the cold medium in the liquid cooling circulation channel according to the temperature control parameters of the semiconductor temperature control device includes: Based on the current magnitude control parameters of the semiconductor temperature control device, and further combined with the current direction control parameters, the liquid pump of the semiconductor temperature control device is controlled to output a current of a corresponding magnitude according to the current direction control parameters. This ensures that when the cold medium in the liquid cooling circulation channel flows through the heat exchange channel corresponding to the semiconductor temperature control device, the semiconductor temperature control device exchanges heat with the cold medium according to the current. If the cold medium is absorbing heat, it indicates that the cold medium is cooling down, meaning a cooling operation is being performed on the semiconductor wearable device; if the cold medium is releasing heat, it indicates that the cold medium is heating up, meaning a heating operation is being performed on the semiconductor wearable device. Furthermore, the semiconductor heat dissipation device is controlled according to the PWM duty cycle of the semiconductor heat dissipation device to dissipate heat from the cold medium.

[0052] In this embodiment of the invention, the semiconductor temperature control device has three modes: cooling, heating, and constant temperature. Each mode exists independently. In the cooling and heating modes, the current directions are opposite. Specifically, in the cooling mode, the current direction can be considered positive. When the current flows along the P-type semiconductor → N-type semiconductor direction of the semiconductor temperature control device, the side of the device in contact with the liquid cooling circulation channel is the cold end. Through the Peltier effect, it absorbs heat from the cold medium, causing the cold medium temperature to decrease (e.g., from 35°C to 15°C). At this time, the heat absorption rate of the cold medium is positive, and the semiconductor wearable device is in a cooling state. In the heating mode, the current direction can be considered reversed. If the current direction is reversed (N-type semiconductor → P-type semiconductor), the cold end and hot end switch, and the original cold end becomes the hot end. At this time, the semiconductor temperature control device releases heat to the cold medium, causing the cold medium temperature to rise. At this time, the heat absorption rate of the cold medium is negative (i.e., heat is released), and the semiconductor temperature control device can be used for localized heating in low-temperature environments (such as maintaining core body temperature during winter operations). It should be noted that the cooling mode and heating mode can be switched in both directions.

[0053] In this embodiment of the invention, regardless of whether it is heating or cooling mode, the higher the current, the faster the heat exchange rate with the cooling medium. Taking cooling mode as an example, the higher the current, the faster the heat absorption rate. Specifically, when the semiconductor temperature control device is started, it operates at maximum cooling output. At this time, the current is at its maximum (e.g., full load 12V DC drive), and the heat absorption rate of the cooling medium reaches its peak, achieving rapid cooling (e.g., reducing the temperature of the cooling medium from 35°C to 15°C within 5 minutes). When the temperature sensor detects that the cooling medium temperature is close to the preset value (e.g., 20°C), the heat absorption rate is reduced by decreasing the current (e.g., using PWM pulse width modulation) to reduce the overcooling of the cooling medium. For example, if the current is reduced from 10A to 3A, the heat absorption rate is reduced by 60%~70%, maintaining the cooling medium temperature stable within the preset comfortable temperature range.

[0054] As can be seen, embodiments of the present invention can further improve the heat exchange rate and accuracy of the cooling medium within the liquid cooling circulation channel by controlling the magnitude and direction of the current in the semiconductor temperature control device, and by combining it with the PWM duty cycle of the semiconductor heat dissipation device. This improves the temperature control accuracy of the semiconductor wearable device, allowing the user's body temperature to reach a comfortable level more quickly. Furthermore, by changing the current direction, the cooling medium's heat absorption and release functions can be dynamically switched, achieving bidirectional temperature control. This ensures a high absorption rate during rapid cooling or a high release rate during high-temperature periods, while reducing energy waste during constant-temperature periods, achieving a high-efficiency, energy-saving balance.

[0055] In an optional embodiment, the method may further include the following steps: From each position in the liquid cooling circulation channel, identify all target locations located in critical areas of the target personnel; During the heat exchange process with the cold medium, the real-time temperature of all target locations is monitored to obtain the temperature monitoring results of the target parts. Based on the temperature monitoring results of the target area, determine whether the current temperature of all target locations is within the preset comfortable temperature range; When the result is determined to be yes, the temperature control parameters of the semiconductor temperature control device are adjusted according to the current temperature of all target locations, and the above steps of controlling the semiconductor temperature control device to perform heat exchange operation with the cold medium in the liquid cooling circulation channel according to the temperature control parameters of the semiconductor temperature control device continue to be performed.

[0056] In this optional embodiment, the key areas include one or more of the armpit, chest, abdomen, and neck. If the result is negative, the semiconductor device continues to operate under the control of the previous temperature control parameters.

[0057] As can be seen, in implementing this optional embodiment, during the operation of the semiconductor temperature control device, the focus is on monitoring the temperature of key parts of the user's body. When the temperature of all key parts is within the comfortable temperature range, the temperature control parameters of the semiconductor temperature control device are adjusted based on the current temperature of the key parts, such as reducing the current or reversing the current direction. This ensures that the semiconductor temperature control device operates in real time to match the user's body temperature in terms of heat exchange with the cold medium, thereby further improving the accuracy of temperature control and allowing the user to remain in a comfortable temperature state for an extended period of time.

[0058] Example 2 Please see Figure 3 , Figure 3 This is a schematic flowchart of another method for automatic heat exchange based on semiconductors, as disclosed in an embodiment of the present invention. Figure 3The described method can be applied to any scenario requiring body temperature regulation and involving the wearing of semiconductor wearable devices, such as outdoor power work scenarios. These semiconductor wearable devices can include clothing such as semiconductor jackets and / or semiconductor trousers and / or semiconductor hats and / or semiconductor gloves and / or semiconductor shoes; for example, a semiconductor jacket could be a vest. Figure 3 As shown, the method may include the following operations: 201. Collect temperature data during the operation of a semiconductor wearable device worn on a target person, which is used to regulate the body temperature of the target person.

[0059] 202. Based on the collected temperature data corresponding to the semiconductor wearable device, analyze the heat exchange rate of the semiconductor temperature control device of the semiconductor wearable device to the cold medium in the liquid cooling circulation channel of the semiconductor wearable device. The cold medium in the liquid cooling circulation channel is used to exchange heat with the target person's body.

[0060] 203. Monitor the current parameters of the semiconductor temperature control device during the heat exchange process of the cold medium in the liquid cooling circulation channel, and obtain the current monitoring results of the semiconductor temperature control device.

[0061] In this embodiment of the invention, the current monitoring result is the liquid pump current monitoring result, including the current magnitude monitoring result, the current direction monitoring result, and / or the current change monitoring result.

[0062] 204. Based on the current monitoring results of the semiconductor temperature control device, determine whether it is necessary to perform a correction operation on the heat exchange rate corresponding to the cold medium; if it is determined that it is not necessary to perform a correction operation on the heat exchange rate corresponding to the cold medium, proceed to step 206; if it is determined that it is necessary to perform a correction operation on the heat exchange rate corresponding to the cold medium, proceed to step 205.

[0063] In this embodiment of the invention, optionally, determining whether a correction operation needs to be performed on the heat exchange rate corresponding to the cold medium based on the current monitoring result of the semiconductor temperature control device includes: By analyzing the current monitoring results of the semiconductor temperature control device, the current fluctuation of the semiconductor temperature control device during the process of the cold medium passing through the heat exchange channel in the liquid cooling circulation channel can be obtained. Based on the current fluctuation of the semiconductor temperature control device, determine all current peaks and valleys with current fluctuation amplitude greater than or equal to the preset current fluctuation amplitude (e.g., 0.6) and the fluctuation value of each current peak and valley. Based on the fluctuation value of each current peak and valley, determine whether there exists a current peak and valley whose fluctuation value is greater than or equal to a preset fluctuation value (e.g., 0.7). If such a value is found, it is determined that a correction operation needs to be performed on the heat exchange rate corresponding to the cold medium. Furthermore, if it is determined that there is no current peak and valley whose fluctuation value is greater than or equal to the preset fluctuation value (e.g., 0.7), it is determined that no correction operation needs to be performed on the heat exchange rate corresponding to the cold medium.

[0064] As can be seen, implementing the embodiments of the present invention can also analyze the current fluctuations by analyzing the current monitoring results, thereby analyzing all current peaks and valleys with current fluctuation amplitudes greater than or equal to a preset current fluctuation amplitude (such as 0.6) and the fluctuation value of each current peak and valley, and thus determine whether the heat exchange rate needs to be adjusted, thereby improving the accuracy and reliability of the judgment, thereby improving the accuracy and reliability of the heat exchange rate adjustment, or the accuracy and reliability of the generation of temperature control parameters.

[0065] 205. Based on the current monitoring results of the semiconductor temperature control device, perform a correction operation on the heat exchange rate corresponding to the cold medium, and then proceed to step 206.

[0066] In this embodiment of the invention, optionally, a correction operation is performed on the heat exchange rate corresponding to the cold medium based on the current monitoring result of the semiconductor temperature control device, including: The current peaks and valleys with fluctuation values ​​greater than or equal to the preset fluctuation value are screened from the current monitoring results of the semiconductor temperature control device, and the average fluctuation amplitude of all current peaks and valleys is calculated. Calculate the heat exchange difference between the heat exchange rate corresponding to the cold medium and the preset heat exchange rate, and determine the matching heat correction coefficient based on the heat exchange difference and the mean fluctuation range, and perform a correction operation on the heat exchange rate corresponding to the cold medium according to the heat correction coefficient.

[0067] In this embodiment of the invention, when the heat exchange difference is greater than a preset difference (e.g., 0) and the mean fluctuation amplitude is greater than a preset fluctuation amplitude (e.g., 0), it indicates that the current peak causes the rate to be too high. The heat exchange difference is then divided by a preset heat exchange efficiency to obtain a first heat result, and the mean fluctuation amplitude is divided by a preset current fluctuation amplitude to obtain a second heat result. The first heat result is multiplied by the second heat exchange result to obtain a basic correction coefficient. I is subtracted from this basic correction coefficient to obtain a heat correction coefficient. This heat correction coefficient is then multiplied by the heat exchange rate to obtain a reduced heat exchange rate, i.e., reducing the current of the liquid pump, or further reducing the rated PWM duty cycle of the semiconductor heat sink. When the heat exchange difference is less than a preset difference (e.g., 0) and the mean fluctuation amplitude is less than a preset fluctuation amplitude (e.g., 0), it indicates that the current trough causes the rate to be too low. In this case, it is necessary to increase the heat exchange rate. I is then added to the basic correction coefficient to obtain a heat correction coefficient, and this heat correction coefficient is multiplied by the heat exchange rate to obtain an increased heat exchange rate, i.e., increasing the current of the liquid pump, or further increasing the rated PWM duty cycle of the semiconductor heat sink.

[0068] As can be seen, the embodiments of the present invention can also construct a precise temperature control closed-loop system based on current fluctuation analysis and dynamic correction of heat exchange rate. The core advantage lies in solving the problem of unstable cooling caused by current fluctuation in traditional temperature control in a quantitative way: by screening current peaks and valleys, calculating the average fluctuation amplitude, and combining the heat exchange difference to determine the heat correction coefficient, the liquid pump current or semiconductor heat dissipation PWM duty cycle is dynamically adjusted, which improves the accuracy and reliability of the determination of the heat correction coefficient, thereby further improving the accuracy and reliability of the determination of the heat exchange rate, and thus helping to further improve the accuracy of heat exchange of semi-cooled media.

[0069] 206. Based on the heat exchange rate corresponding to the cold medium, generate the temperature control parameters of the semiconductor temperature control device, and based on the temperature control parameters of the semiconductor temperature control device, control the semiconductor temperature control device to perform heat exchange operation with the cold medium in the liquid cooling circulation channel.

[0070] In this embodiment of the invention, for detailed descriptions of steps 201-202 and 206, please refer to the other descriptions of steps 101-103 in Embodiment 1. These descriptions will not be repeated in this embodiment of the invention.

[0071] It is evident that implementation Figure 3The described semiconductor-based automatic heat exchange processing method collects real-time temperature data from wearable semiconductor devices, dynamically analyzes the heat exchange rate of the refrigerant in the liquid cooling circulation channel, generates precise temperature control parameters, and controls the semiconductor temperature control device to perform heat exchange with the refrigerant. This achieves intelligent dynamic temperature regulation and long-term heat preservation, improving the accuracy of human body temperature control. It can continuously cool down in summer, effectively reducing user sweating, and provide heating and warmth in winter, significantly improving the thermal and moisture comfort of the human body. For outdoor workers, such as power workers, long-term stable temperature control reduces physical discomfort in high or low temperature environments, lowers the risk of heatstroke or frostbite, and thus improves work focus and efficiency. Furthermore, by optimizing the airtightness of the liquid cooling circulation and the safety design of the semiconductor temperature control, the occurrence of leakage is greatly reduced, especially for special groups such as outdoor power workers, effectively ensuring the personal safety of workers during operation. Furthermore, by monitoring the current of the semiconductor temperature control device during the heat exchange process of the cold medium, and determining whether a heat exchange rate correction is needed based on the current monitoring results, when a correction is needed, a corresponding heat correction coefficient is generated based on the monitored current and other factors to correct the heat exchange rate of the cold medium. This achieves precise closed-loop control of the heat exchange rate, thereby further improving the accuracy and reliability of the heat exchange rate analysis, which in turn helps to further improve the accuracy of the heat exchange of the cold medium.

[0072] Example 3 Please see Figure 4 , Figure 4 This is a schematic diagram of a semiconductor-based automatic heat exchange processing device disclosed in an embodiment of the present invention. This device can be applied to any scenario requiring body temperature regulation and where wearable semiconductor devices are worn, such as outdoor power work scenarios. The wearable semiconductor devices may include semiconductor clothing such as a semiconductor top and / or semiconductor pants and / or semiconductor hat and / or semiconductor gloves and / or semiconductor shoes; for example, a semiconductor top could be a vest. Figure 4 As shown, the device may include: The data acquisition module 301 is used to acquire temperature data during the operation of the semiconductor wearable device worn on the target person. The semiconductor wearable device is used to regulate the body temperature of the target person. Analysis module 302 is used to analyze the heat exchange rate of the semiconductor temperature control device of the semiconductor wearable device to the cold medium in the liquid cooling circulation channel of the semiconductor wearable device based on the collected temperature data corresponding to the semiconductor wearable device. The cold medium in the liquid cooling circulation channel is used to exchange heat with the human body of the target person. The generation module 303 is used to generate temperature control parameters for the semiconductor temperature control device based on the heat exchange rate corresponding to the cold medium. The control module 304 is used to control the semiconductor temperature control device to perform heat exchange operations with the cold medium in the liquid cooling circulation channel according to the temperature control parameters of the semiconductor temperature control device.

[0073] It is evident that implementation Figure 4 The described device collects temperature data from semiconductor wearable devices in real time, dynamically analyzes the heat exchange rate of the refrigerant in the liquid cooling circulation channel, generates precise temperature control parameters, and controls the semiconductor temperature control device to perform heat exchange with the refrigerant. This achieves intelligent dynamic temperature regulation and long-term heat preservation, improving the accuracy of human body temperature control. It can continuously cool down in summer, effectively reducing the user's sweating rate, and provide heating and warmth in winter, significantly improving the thermal and moisture comfort of the human body surface. For outdoor workers, such as power workers, long-term stable temperature control reduces physical discomfort in high or low temperature environments, lowers the risk of heatstroke or frostbite, and thus improves work focus and efficiency. Furthermore, by optimizing the airtightness of the liquid cooling circulation and the safety design of the semiconductor temperature control, the occurrence of leakage is greatly reduced, especially for special groups such as outdoor power workers, effectively ensuring the personal safety of workers during operation.

[0074] In this embodiment of the invention, optionally, the semiconductor temperature control device is provided with a corresponding heat exchange channel, which is used for the cold medium in the liquid cooling circulation channel to flow from the first end of the heat exchange channel to the second end of the heat exchange channel for heat exchange. The specific methods by which the acquisition module 301 acquires temperature data during the operation of the semiconductor wearable device worn on the target person include: When the semiconductor wearable device is worn on the target person, the temperature of the first cold medium in the liquid cooling circulation channel is collected by the temperature monitor set on the first end of the heat exchange channel when the cold medium passes through the first end, and the temperature of the second cold medium when the cold medium passes through the second end is collected by the temperature monitor set on the second end of the heat exchange channel. The temperature of the first cold medium at the first end and the temperature of the second cold medium at the second end are determined as the temperature data during the operation of the semiconductor wearable device.

[0075] It is evident that implementation Figure 4 The described device can collect temperature data of the cold medium passing through the first and second ends in real time by setting temperature monitors at both ends of the heat exchange channel of the semiconductor temperature control device. This improves the accuracy of temperature data collection during the operation of the semiconductor wearable device, thereby improving the heat exchange efficiency of the cold medium and the accuracy of the temperature control parameters generated by the semiconductor temperature control device. This allows for more accurate heat exchange of the cold medium and achieves precise dynamic temperature control of the semiconductor wearable device.

[0076] In this embodiment of the invention, optionally, the analysis module 302 analyzes the specific method by which the heat exchange rate of the semiconductor temperature control device of the semiconductor wearable device with the cold medium in the liquid cooling circulation channel of the semiconductor wearable device is determined based on the collected temperature data corresponding to the semiconductor wearable device, including: The length of the heat exchange channel and the flow velocity of the cold medium in the heat exchange channel are obtained. Based on the length of the heat exchange channel and the flow velocity of the cold medium in the heat exchange channel, the flow time required for the cold medium to travel from the first end to the second end is analyzed. Calculate the temperature difference between the first cold medium temperature at the first end and the second cold medium temperature at the second end, and determine the first heat exchange rate of the cold medium after passing through the heat exchange channel based on the cold medium temperature difference and the flow time. Obtain the type of cold medium and the mass of cold medium flowing through the first or second end per unit time, and determine the second heat exchange rate of the cold medium after passing through the heat exchange channel based on the type of cold medium and the mass of the cold medium. The heat exchange rate of the cold medium in the semiconductor temperature control device is determined based on the first heat exchange rate and the second heat exchange rate of the cold medium.

[0077] It is evident that implementation Figure 4 The described device accurately calculates the heat exchange rate by collecting refrigerant temperature data at both ends of the heat exchange channel in real time, combined with refrigerant flow time, medium type and mass. It integrates the wide-range cooling capacity of liquid cooling circulation with the high efficiency of semiconductor refrigeration, thereby improving the accuracy of temperature control parameter analysis and further enhancing the dynamic temperature control accuracy of semiconductor temperature control devices. This solves the pain points of traditional semiconductor cooling (small cooling range), liquid cooling (large weight and potential electrical conductivity risks). For outdoor power workers, the closed-loop refrigerant circulation achieves long-lasting cooling, effectively reducing sweating, improving body surface thermal and humidity comfort, and enhancing work focus and efficiency. Furthermore, it eliminates the need for frequent refrigerant replacements, is portable and lightweight, and does not affect operational flexibility. The closed-loop circulation also reduces the risk of electrical conductivity caused by refrigerant overflow, significantly improving the working experience and safety of field power workers.

[0078] In an optional embodiment, such as Figure 5 As shown, the device may further include: Monitoring module 305 is used to monitor the current parameters of the semiconductor temperature control device during the process of the cold medium passing through the heat exchange channel in the liquid cooling circulation channel, and to obtain the current monitoring results of the semiconductor temperature control device. The judgment module 306 is used to determine whether it is necessary to perform a correction operation on the heat exchange rate corresponding to the cold medium based on the current monitoring result of the semiconductor temperature control device; when it is determined that no correction operation is needed on the heat exchange rate corresponding to the cold medium, the generation module 303 is triggered to generate the temperature control parameters of the semiconductor temperature control device based on the heat exchange rate corresponding to the cold medium. The correction module 307 is used to perform a correction operation on the heat exchange rate corresponding to the cold medium according to the current monitoring results of the semiconductor temperature control device when it is determined that a correction operation needs to be performed on the heat exchange rate corresponding to the cold medium, and to trigger the generation module 303 to perform the operation of generating the temperature control parameters of the semiconductor temperature control device according to the heat exchange rate corresponding to the cold medium.

[0079] It is evident that implementation Figure 5 The described device monitors the current of the semiconductor temperature control device during the heat exchange process of the cold medium, and determines whether the heat exchange rate needs to be corrected based on the current monitoring results. When correction is required, a corresponding heat correction coefficient is generated based on the monitored current and other factors to correct the heat exchange rate of the cold medium. This achieves precise closed-loop control of the heat exchange rate, thereby further improving the accuracy and reliability of the heat exchange rate analysis, which in turn helps to further improve the accuracy of the heat exchange of the cold medium.

[0080] In this optional embodiment, the specific method by which the determining module 306 determines whether a correction operation needs to be performed on the heat exchange rate corresponding to the cold medium based on the current monitoring result of the semiconductor temperature regulating device includes: By analyzing the current monitoring results of the semiconductor temperature control device, the current fluctuation of the semiconductor temperature control device during the process of the cold medium passing through the heat exchange channel in the liquid cooling circulation channel can be obtained. Based on the current fluctuation of the semiconductor temperature control device, determine all current peaks and valleys whose current fluctuation amplitude is greater than or equal to the preset current fluctuation amplitude, as well as the fluctuation value of each current peak and valley. Based on the fluctuation value of each current peak and valley, determine whether there is a current peak or valley whose fluctuation value is greater than or equal to the preset fluctuation value. When it is determined that there is, it is determined that a correction operation needs to be performed on the heat exchange rate corresponding to the cold medium.

[0081] It is evident that implementation Figure 5The described device analyzes the current fluctuations in the current monitoring results, thereby analyzing all current peaks and valleys with current fluctuation amplitudes greater than or equal to the preset current fluctuation amplitude, as well as the fluctuation value of each current peak and valley. This allows the device to determine whether the heat exchange rate needs to be adjusted, improving the accuracy and reliability of the judgment, and thus improving the accuracy and reliability of the heat exchange rate adjustment, or the accuracy and reliability of the temperature control parameter generation.

[0082] In another alternative embodiment, such as Figure 5 As shown, the specific method by which the generation module 303 generates the temperature control parameters of the semiconductor temperature control device based on the heat exchange rate corresponding to the cold medium includes: Based on the heat exchange rate corresponding to the cold medium and multiple preset heat exchange rate intervals, the target interval of the heat exchange rate corresponding to the cold medium in all preset heat exchange rate intervals is analyzed to obtain the heat exchange analysis results. Based on the heat exchange analysis results, a temperature control method matching the target range is determined. Then, based on this method, temperature control parameters for the semiconductor temperature control device are generated. These parameters include liquid pump control parameters, which include current magnitude control parameters (higher current indicates higher power). Furthermore, current direction control parameters are also included. Additionally, control parameters for the semiconductor heat dissipation device, such as PWM duty cycle, can be further included; a higher duty cycle indicates higher power.

[0083] In this embodiment of the invention, optionally, all preset heat exchange rate intervals include a first preset heat exchange rate interval, a second preset heat exchange rate interval, and a third preset heat exchange rate interval, and the rates of the first preset heat exchange rate interval, the second preset heat exchange rate interval, and the third preset heat exchange rate interval are sequentially downgraded. When the target range is the first preset heat exchange rate range, the current corresponding to the current magnitude control parameter is the first current, and the PWM duty cycle is the first duty cycle; when the target range is the second preset heat exchange rate range, the current corresponding to the current magnitude control parameter is the second current, and the PWM duty cycle is the second duty cycle; when the target range is the third preset heat exchange rate range, the current corresponding to the current magnitude control parameter is the third current, and the PWM duty cycle is the third duty cycle, and the first current, second current, and third current decrease sequentially, as do the first duty cycle, second duty cycle, and third duty cycle.

[0084] It is evident that implementation Figure 5The described device dynamically generates multi-dimensional temperature control parameters by matching the heat exchange rate of the cooling medium with a preset range, achieving precise and intelligent coordinated regulation. It adjusts the liquid pump current and the semiconductor heat dissipation PWM duty cycle according to the heat exchange rate (high, medium, low), with the current and duty cycle decreasing sequentially as the rate decreases. This ensures efficient cooling under high loads while enabling energy-saving operation under low loads, reducing energy waste. For users engaged in outdoor power work, the dynamic adaptation strategy can sustainably maintain a comfortable body surface temperature, significantly reducing sweating and improving work focus and efficiency. The tiered parameter control extends the device's battery life, adapting to long-term fieldwork scenarios without frequent charging. Furthermore, by adjusting parameters according to actual conditions, it reduces sudden changes in current or power, lowering the risk of device overload. The semiconductor heat dissipation PWM control ensures stable system operation and reduces overheating failures.

[0085] Example 4 Please see Figure 6 , Figure 6 This is a schematic diagram of another processing device for automatic heat exchange based on semiconductors, as disclosed in an embodiment of the present invention. Figure 6 As shown, the device may include: Memory 401 storing executable program code; Processor 402 coupled to memory 401; The processor 402 calls the executable program code stored in the memory 401 to execute some or all of the steps in any of the processing methods for automatic heat exchange based on semiconductors in Embodiment 1 or Embodiment 2 of the present invention.

[0086] Example 5 This invention discloses a computer storage medium storing computer instructions. When these computer instructions are invoked, they are used to execute some or all of the steps in any of the semiconductor-based automatic heat exchange processing methods disclosed in Embodiments 1 and 2 of this invention.

[0087] Example 6 This invention discloses a semiconductor wearable device, which includes a device body and a temperature control device disposed on the device body. The temperature control device includes any of the semiconductor-based automatic heat exchange processing devices disclosed in Embodiment 3 or Embodiment 4 of this invention, and is used to execute some or all of the steps in any of the semiconductor-based automatic heat exchange processing methods disclosed in Embodiment 1 or Embodiment 2 of this invention.

[0088] The device embodiments described above are merely illustrative. The modules described as separate components may or may not be physically separate. The components shown as modules may or may not be physical modules; that is, they may be located in one place or distributed across multiple network modules. Some or all of the modules can be selected to achieve the purpose of this embodiment according to actual needs. Those skilled in the art can understand and implement this without any creative effort.

[0089] Through the detailed description of the above embodiments, those skilled in the art can clearly understand that each implementation method can be implemented by means of software plus necessary general-purpose hardware platforms, and of course, it can also be implemented by hardware. Based on this understanding, the above technical solutions, in essence or the part that contributes to the prior art, can be embodied in the form of a software product. This computer software product can be stored in a computer-readable storage medium, including read-only memory (ROM), random access memory (RAM), programmable read-only memory (PROM), erasable programmable read-only memory (EPROM), one-time programmable read-only memory (OTPROM), electrically-Erasable Programmable Read-Only Memory (EEPROM), compact disc read-only memory (CD-ROM) or other optical disc storage, disk storage, magnetic tape storage, or any other computer-readable medium that can be used to carry or store data.

[0090] Finally, it should be noted that the above embodiments are merely preferred embodiments of the present invention and are only used to illustrate the technical solutions of the present invention, not to limit them. Although the present invention has been described in detail with reference to the foregoing embodiments, those skilled in the art should understand that modifications can still be made to the technical solutions described in the foregoing embodiments, or equivalent substitutions can be made to some of the technical features. Such modifications or substitutions do not cause the essence of the corresponding technical solutions to deviate from the spirit and scope of the technical solutions of the embodiments of the present invention.

Claims

1. A method for automatic heat exchange based on semiconductors, characterized in that, The method includes: Temperature data is collected during the operation of a semiconductor wearable device worn on a target person, the semiconductor wearable device being used to regulate the body temperature of the target person; Based on the collected temperature data corresponding to the semiconductor wearable device, the heat exchange rate of the semiconductor temperature control device of the semiconductor wearable device to the cold medium in the liquid cooling circulation channel of the semiconductor wearable device is analyzed. The cold medium in the liquid cooling circulation channel is used to exchange heat with the human body of the target person. Based on the heat exchange rate corresponding to the cold medium, the temperature control parameters of the semiconductor temperature control device are generated, and based on the temperature control parameters of the semiconductor temperature control device, the semiconductor temperature control device is controlled to perform heat exchange operation with the cold medium in the liquid cooling circulation channel.

2. The processing method for automatic heat exchange based on semiconductors according to claim 1, characterized in that, The semiconductor temperature control device is provided with a corresponding heat exchange channel, which is used to allow the cold medium in the liquid cooling circulation channel to flow from the first end of the heat exchange channel to the second end of the heat exchange channel for heat exchange. The temperature data collected during the operation of the semiconductor wearable device worn on the target person includes: When the semiconductor wearable device is worn on the target person, the temperature of the first cold medium in the liquid cooling circulation channel is collected by the temperature monitor set on the first end of the heat exchange channel when the cold medium passes through the first end, and the temperature of the second cold medium when the cold medium passes through the second end is collected by the temperature monitor set on the second end of the heat exchange channel. The temperature of the first cold medium at the first end and the temperature of the second cold medium at the second end are determined as the temperature data during the operation of the semiconductor wearable device.

3. The processing method for automatic heat exchange based on semiconductors according to claim 2, characterized in that, The step of analyzing the heat exchange rate of the semiconductor temperature control device of the wearable semiconductor device with the cold medium in the liquid cooling circulation channel of the wearable semiconductor device based on the collected temperature data includes: The length of the heat exchange channel and the flow velocity of the cold medium in the heat exchange channel are obtained, and the flow time required for the cold medium to travel from the first end to the second end is analyzed based on the length of the heat exchange channel and the flow velocity of the cold medium in the heat exchange channel. Calculate the temperature difference between the first cold medium temperature at the first end and the second cold medium temperature at the second end, and determine the first heat exchange rate of the cold medium after passing through the heat exchange channel based on the cold medium temperature difference and the flow time. The medium type of the cold medium and the mass of the cold medium flowing through the first end or the second end per unit time are obtained, and the second heat exchange rate of the cold medium after passing through the heat exchange channel is determined based on the medium type and the mass of the cold medium. The heat exchange rate of the cold medium in the semiconductor temperature control device is determined based on the first heat exchange rate and the second heat exchange rate of the cold medium.

4. The processing method for automatic heat exchange based on semiconductors according to any one of claims 1-3, characterized in that, The method further includes: The current parameters of the semiconductor temperature control device are monitored during the process of the cold medium in the liquid cooling circulation channel passing through the heat exchange channel, and the current monitoring results of the semiconductor temperature control device are obtained. Based on the current monitoring results of the semiconductor temperature control device, it is determined whether a correction operation needs to be performed on the heat exchange rate corresponding to the cold medium; when it is determined that no correction operation needs to be performed on the heat exchange rate corresponding to the cold medium, the operation of generating the temperature control parameters of the semiconductor temperature control device based on the heat exchange rate corresponding to the cold medium is performed. When it is determined that a correction operation needs to be performed on the heat exchange rate corresponding to the cold medium, the correction operation is performed on the heat exchange rate corresponding to the cold medium according to the current monitoring result of the semiconductor temperature control device, and the operation of generating the temperature control parameters of the semiconductor temperature control device according to the heat exchange rate corresponding to the cold medium is performed.

5. The processing method for automatic heat exchange based on semiconductors according to claim 4, characterized in that, The step of determining whether to perform a correction operation on the heat exchange rate corresponding to the cold medium based on the current monitoring results of the semiconductor temperature control device includes: By analyzing the current monitoring results of the semiconductor temperature control device, the current fluctuation of the semiconductor temperature control device during the process of the cold medium in the liquid cooling circulation channel passing through the heat exchange channel is obtained. Based on the current fluctuation of the semiconductor temperature control device, determine all current peaks and valleys whose current fluctuation amplitude is greater than or equal to a preset current fluctuation amplitude, as well as the fluctuation value of each current peak and valley. Based on the fluctuation value of each current peak and valley, determine whether there is a current peak and valley whose fluctuation value is greater than or equal to a preset fluctuation value. When it is determined that there is, it is determined that a correction operation needs to be performed on the heat exchange rate corresponding to the cold medium.

6. The processing method for automatic heat exchange based on semiconductors according to any one of claims 1-3 and 5, characterized in that, The step of generating temperature control parameters for the semiconductor temperature control device based on the heat exchange rate corresponding to the cooling medium includes: Based on the heat exchange rate corresponding to the cold medium and multiple preset heat exchange rate intervals, the target interval of the heat exchange rate corresponding to the cold medium in all preset heat exchange rate intervals is analyzed to obtain heat exchange analysis results. Based on the heat exchange analysis results, a temperature control method matching the target range is determined, and based on the temperature control method, temperature control parameters of the semiconductor temperature control device are generated. The temperature control parameters of the semiconductor temperature control device include liquid pump control parameters of the semiconductor temperature control device, and the liquid pump control parameters include current magnitude control parameters.

7. The processing method for automatic heat exchange based on semiconductors according to claim 6, characterized in that, All the preset heat exchange rate intervals include a first preset heat exchange rate interval, a second preset heat exchange rate interval, and a third preset heat exchange rate interval, wherein the rates of the first preset heat exchange rate interval, the second preset heat exchange rate interval, and the third preset heat exchange rate interval are progressively reduced. When the target range is the first preset heat exchange rate range, the current corresponding to the current magnitude control parameter is the first current; when the target range is the second preset heat exchange rate range, the current corresponding to the current magnitude control parameter is the second current; when the target range is the third preset heat exchange rate range, the current corresponding to the current magnitude control parameter is the third current, and the first current, the second current, and the third current decrease sequentially.

8. A processing device for automatic heat exchange based on semiconductors, characterized in that, The device includes: The data acquisition module is used to acquire temperature data during the operation of a semiconductor wearable device worn on a target person, wherein the semiconductor wearable device is used to regulate the body temperature of the target person. The analysis module is used to analyze the heat exchange rate of the semiconductor temperature control device of the semiconductor wearable device to the cold medium in the liquid cooling circulation channel of the semiconductor wearable device based on the collected temperature data corresponding to the semiconductor wearable device. The cold medium in the liquid cooling circulation channel is used to exchange heat with the human body of the target person. The generation module is used to generate the temperature control parameters of the semiconductor temperature control device according to the heat exchange rate corresponding to the cold medium. The control module is used to control the semiconductor temperature control device to perform heat exchange operations with the cold medium in the liquid cooling circulation channel according to the temperature control parameters of the semiconductor temperature control device.

9. A processing device for automatic heat exchange based on semiconductors, characterized in that, The device includes: Memory containing executable program code; A processor coupled to the memory; The processor calls the executable program code stored in the memory to execute the processing method for automatic heat exchange based on semiconductors as described in any one of claims 1-7.

10. A semiconductor wearable device, characterized in that, The semiconductor wearable device includes a device body and a temperature control device disposed on the device body, wherein the temperature control device includes a processing device for automatic heat exchange based on semiconductors as described in claim 8 or 9, and is used to execute the processing method for automatic heat exchange based on semiconductors as described in any one of claims 1-7.