Light emitting display device

Abstract

A light-emitting display device includes: a substrate including a plurality of sub-pixels, each sub-pixel including an emitting region and a contact region; a first reflector formed on the emitting region of the substrate; a first electrode including a main electrode and stacked on the first reflector; a light-emitting layer stacked on the main electrode; a second electrode stacked on the light-emitting layer and being semi-transparent, wherein the main electrode, the light-emitting layer and the second electrode are disposed in the emitting region and the contact region; and a stacked structure located in the contact region, inserted between the main electrode and the light-emitting layer, and including a planarization pattern on the main electrode and a second reflector on the planarization pattern, wherein a microcavity structure located in the emitting region and configured to have the first reflector and the second electrode generates light of the same color as a microcavity structure located in the contact region and configured to have the second reflector and the second electrode.

Description

Cross-references to related applications

[0001] This application claims priority to Korean Patent Application No. 10-2024-0195953, filed in Korea on December 24, 2024, the entire contents of which are incorporated herein by reference for all purposes as if fully set forth herein. Technical Field

[0002] This invention relates to a light-emitting display device. Background Technology

[0003] In recent years, flat panel display devices with excellent characteristics such as thinness, weight reduction, and low power consumption have been widely developed and applied in various fields.

[0004] In flat panel display devices, a light-emitting display device equipped with a light-emitting element (such as a light-emitting diode) is a display device that emits light when charge is injected into the light-emitting layer formed between the anode and cathode of the light-emitting diode and electrons and holes pair up and then annihilate.

[0005] In recent years, subpixels in light-emitting display devices have been configured to have microcavity structures located in the emission region of each subpixel in order to improve the emission efficiency of the subpixel's color.

[0006] However, the sub-pixel has a contact region where the anode of the transistor and the light-emitting diode are connected. Lateral leakage current from the emission region can cause emission in the contact region. In the contact region, the reflector has an uneven shape due to the contact hole, so the contact region is formed with a microcavity structure, which defines a resonant distance different from the resonant distance of the microcavity structure in the emission region.

[0007] Therefore, within a sub-pixel, the light generated in the contact area has a different color than the light generated in the emission area. This can cause color mixing within the sub-pixel due to the light in the contact area, resulting in a reduction in the color gamut. Summary of the Invention

[0008] One object of the present invention is to provide a light-emitting display device that can reduce or prevent color mixing and color gamut reduction in sub-pixels due to the generation of light with a different color in the contact area than the light in the emitting area.

[0009] Other objects, features, and advantages of the invention will be set forth in the description which follows, and will be apparent in part from the description, or may be learned by practice of the invention. These and other objects, features, and advantages of the invention will be realized and obtained by means of the structures particularly pointed out in the written description and claims and the accompanying drawings.

[0010] To achieve these and other objects, features, and advantages, and according to the present invention, as embodied and broadly described herein, a light-emitting display device includes: a substrate including a plurality of sub-pixels, each sub-pixel including an emitting region and a contact region; a first reflector disposed on the emitting region of the substrate; a first electrode including a main electrode and stacked on the first reflector; a light-emitting layer stacked on the main electrode; a second electrode stacked on the light-emitting layer and being translucent, wherein the main electrode, the light-emitting layer, and the second electrode are disposed in the emitting region and the contact region; and a stacked structure located in the contact region and interposed between the main electrode and the light-emitting layer, the stacked structure including a planarization pattern on the main electrode and a second reflector on the planarization pattern, wherein a microcavity structure located in the emitting region and configured to have the first reflector and the second electrode produces light of the same color as a microcavity structure located in the contact region and configured to have the second reflector and the second electrode.

[0011] It should be understood that the foregoing general description and the following detailed description are exemplary and illustrative, and are intended to provide further explanation of the claimed invention. Attached Figure Description

[0012] The accompanying drawings illustrate embodiments of the present disclosure and, together with the description, serve to explain the principles of the disclosure. The drawings are included to provide a further understanding of the disclosure and are incorporated in and constitute a part of this specification. In the drawings:

[0013] Figure 1 This is a schematic plan view showing the arrangement of sub-pixels in a light-emitting display device according to a first embodiment of the present invention;

[0014] Figure 2 and 3 They are along Figure 1 Cross-sectional views taken from lines II-II' and III-III';

[0015] Figure 4 , Figure 5 and Figure 6 They are along Figure 1 Cross-sectional views of lines IV-IV', V-V', and VI-VI';

[0016] Figure 7 This is a cross-sectional view showing the structure of the emitting region of a sub-pixel of a light-emitting display device according to a second embodiment of the present invention;

[0017] Figure 8 , Figure 9 and Figure 10These are cross-sectional views showing the structures of the emission regions and contact regions of the red sub-pixel, green sub-pixel, and blue sub-pixel according to a second embodiment of the present invention;

[0018] Figure 11 , Figure 12 and Figure 13 These are cross-sectional views showing the structures of the emission regions and contact regions of the red, green, and blue sub-pixels according to a third embodiment of the present invention; and

[0019] Figure 14 , Figure 15 and Figure 16 These are cross-sectional views showing the structures of the emission and contact regions of the red, green, and blue sub-pixels according to a fourth embodiment of the present invention. Detailed Implementation

[0020] The advantages and features of the present invention, as well as the methods for achieving these advantages and features, will become apparent from the embodiments described in detail below with reference to the accompanying drawings. However, the present invention is not limited to the embodiments disclosed below, but can be implemented in various different forms, and only these embodiments allow for the completion of the invention. The present invention is provided to fully inform those skilled in the art to which this disclosure pertains, and the invention can be defined by the scope of the claims.

[0021] The shapes, dimensions, proportions, angles, quantities, etc., disclosed in the accompanying drawings used to explain embodiments of the invention are illustrative and the invention is not limited to the matters shown. Throughout the specification, the same reference numerals refer to the same parts.

[0022] Furthermore, in describing this invention, detailed descriptions of relevant known technologies may be omitted if it is determined that such detailed descriptions unnecessarily obscure the subject matter of the invention. When terms such as "comprising," "including," "having," or "consisting of" are used in this invention, additional components may be added unless "only" is used. When a component is referred to in the singular, the plural form is also included unless a specific statement is described.

[0023] When interpreting components, even without a separate explicit description, it is interpreted as including a margin range.

[0024] When describing positional relationships, for example, when the positional relationship between two components is described as "on," "above," "above," "below," "beside," "under," etc., one or more other components may be positioned between the two components unless "exactly" or "directly" is used.

[0025] When describing time relationships, such as when time priorities are described as "after", "following", "before", etc., discontinuous cases may be included unless "directly" or "immediately following" is used.

[0026] When describing the components of the present invention, terms such as first and second may be used. These terms are only used to distinguish these components from other components, and the nature, order, sequence, or number of these components are not limited by these terms.

[0027] The various features of the various embodiments of the present invention can be connected or combined with each other in part or in whole, and can be interlocked and driven in various technical ways, and the various embodiments can be implemented independently of each other or can be implemented together in a related relationship.

[0028] Embodiments of the present invention will now be described in detail with reference to the accompanying drawings. Furthermore, in the following embodiments, the same and similar reference numerals are assigned to the same and similar parts, and their detailed descriptions may be omitted.

[0029] <First Embodiment>

[0030] Figure 1 This is a schematic plan view illustrating the arrangement of sub-pixels in a light-emitting display device according to a first embodiment of the present invention. Figure 2 and 3 They are along Figure 1 Cross-sectional views taken from lines II-II' and III-III'. Figure 2 The structure of the emission region of a sub-pixel is shown. Figure 3 The structure of the contact area of ​​the sub-pixel is shown.

[0031] Before describing it in detail, the light-emitting display device 10 according to the first embodiment of the present invention may include any type of display device that uses a light-emitting diode OD as a self-emissive element to display an image.

[0032] In this embodiment, for ease of explanation, an organic light-emitting display device can be used as the light-emitting display device 10.

[0033] In addition, the light-emitting display device 10 can be a top-emitting display device.

[0034] Reference Figures 1 to 3 The light-emitting display device 10 (or its display panel) in this embodiment may include a display area AA for displaying images and a non-display area NA located outside and surrounding the display area AA.

[0035] The display area AA may include multiple sub-pixels SP arranged on the substrate 101 along multiple row lines (or horizontal lines) and multiple column lines (or vertical lines).

[0036] Meanwhile, multiple gate lines (or scan lines) extending along the row direction (or horizontal direction or a first direction) and multiple data lines extending along the column direction (or vertical direction or a second direction) can be formed on the substrate 101. Each sub-pixel SP can be connected to the corresponding gate line and data line.

[0037] Furthermore, power lines for transmitting high-potential driving voltages and power lines for transmitting low-potential driving voltages can be formed on the substrate 101. The high-potential driving voltage and the low-potential driving voltage can be applied to the sub-pixel SP.

[0038] The plurality of subpixels SP formed on the substrate 101 may include subpixels SP of different colors constituting pixel P, which is a unit for displaying a color image. For example, the subpixels SP constituting pixel P may include subpixels SP that display a first color, a second color, and a third color respectively, such as a red subpixel (or first subpixel) SPr, a green subpixel (or second subpixel) SPg, and a blue subpixel SPb (or third subpixel) that display red, green, and blue respectively. As another example, the subpixels SP constituting pixel P may also include white subpixels that display white.

[0039] In this embodiment, an instance in which pixel P is configured to have a red sub-pixel SPr, a green sub-pixel SPg, and a blue sub-pixel SPb is used as an example.

[0040] The red sub-pixel SPr, green sub-pixel SPg, and blue sub-pixel SPb can be arranged in various configurations. For example, as... Figure 1 As shown, subpixels SP can be arranged in a strip pattern, wherein subpixels SP of the same color are arranged in a strip structure (wherein subpixels SP of the same color can be arranged in the column direction), while subpixels SP of different colors can be arranged alternately in the row direction, but are not limited thereto.

[0041] Each sub-pixel SP may include a light-emitting diode OD as a light-emitting element. Furthermore, the sub-pixel SP may include a pixel driving circuit for driving the light-emitting diode OD. The pixel driving circuit may include multiple thin-film transistors TR, each including a driving transistor, and at least one capacitor. In this configuration, during the emission period, the driving transistors may be turned on to generate an emission current, and this emission current may be supplied to the light-emitting diode OD to perform the emission operation.

[0042] Each subpixel SP may include, for example, an emission region EA and a non-emission region surrounding the emission region EA, which is the effective emission region that actually produces light of the corresponding color. In this paper, the color of the emission region EA may be referred to as the color of the subpixel SP.

[0043] The emission region EA can be the area in which a light-emitting diode OD is formed. Therefore, the light generated from the light-emitting diode OD can be output in the emission region EA.

[0044] A contact area CA can be defined in the non-emitting region, and the light-emitting diode OD can be connected to the thin-film transistor TR of the pixel driving circuit located in the contact area CA. In the contact area CA, the drain electrode of the thin-film transistor TR and the first electrode (or anode electrode) AE, which serves as the lower electrode of the light-emitting diode OD, can be electrically connected, such that a driving signal (or driving current) from the thin-film transistor TR can be applied to the first electrode AE. In this embodiment, for ease of explanation, it is shown that the contact area CA is located on one side of the emitting region EA (e.g., above the emitting region EA, such as...). Figure 1 (See the example shown).

[0045] Furthermore, for ease of explanation, the emission area EA and contact area CA of the red sub-pixel SPr can be referred to as the first emission area EA1 and the first contact area CA1, the emission area EA and contact area CA of the green sub-pixel SPg can be referred to as the second emission area EA2 and the second contact area CA2, and the emission area EA and contact area CA of the blue sub-pixel SPb can be referred to as the third emission area EA3 and the third contact area CA3.

[0046] To enhance the color emission efficiency of each sub-pixel SP, each sub-pixel SP can be implemented with a microcavity structure configured to have a translucent laminate and a reflective laminate arranged vertically, wherein a light-emitting layer 145 is inserted between the two.

[0047] For example, red subpixel SPr, green subpixel SPg, and blue subpixel SPb can emit light of different colors (i.e., different wavelengths), and therefore they can have different cavity thicknesses, i.e., resonant distances (d: d1, d2, and d3), in their respective emission regions (EA: EA1, EA2, and EA3).

[0048] In this respect, the red sub-pixel SPr, the green sub-pixel SPg, and the blue sub-pixel SPb can have a resonant distance d proportional to their color wavelength (or half a wavelength). The resonant distance d of each sub-pixel SP can be matched to an integer multiple of the half wavelength of its corresponding color.

[0049] In this respect, the red sub-pixel SPr, which outputs the color with the longest wavelength, can have a relatively largest first resonant distance d1 in the corresponding first emission region EA1. The green sub-pixel SPg, which outputs the color with an intermediate wavelength, can have a second resonant distance d2 in the corresponding second emission region EA2, which is smaller than the first resonant distance d1. The blue sub-pixel SPb, which outputs the color with the shortest wavelength, can have a third resonant distance d3 in the corresponding third emission region EA3, which is smaller than the second resonant distance d2.

[0050] In this way, by utilizing the microcavity structure, color purity and emission efficiency can be improved.

[0051] In this embodiment, a microcavity structure with a resonant distance capable of emitting the colored light of each sub-pixel SP can be formed for the contact area CA of each sub-pixel SP.

[0052] In this respect, the light-emitting layer 145 in the sub-pixel SP can extend over the contact region CA, thereby allowing the current in the emission region EA to flow laterally and leak into the contact region CA. This lateral leakage current can cause emission from the light-emitting layer 145 located in the contact region CA.

[0053] In this embodiment, a microcavity structure having a resonant distance substantially equal to the resonant distance d of the emission region EA of the sub-pixel SP can be formed in the contact region CA of the sub-pixel SP.

[0054] Reference Figure 2 and Figure 3 For example, in the red sub-pixel SPr, a microcavity structure with a fourth resonant distance dc1 (equal to the first resonant distance d1 of the first emission region EA1) can be implemented in the first contact region CA1. Furthermore, in the green sub-pixel SPg, a microcavity structure with a fifth resonant distance dc2 (equal to the second resonant distance d2 of the second emission region EA2) can be implemented in the second contact region CA2. Furthermore, in the blue sub-pixel SPb, a microcavity structure with a sixth resonant distance dc3 (equal to the third resonant distance d3 of the third emission region EA3) can be implemented in the third contact region CA3.

[0055] Therefore, in the sub-pixel SP, the contact area CA can generate and output colored light with a wavelength range that is substantially the same as that of the corresponding emission area EA.

[0056] Therefore, it is possible to prevent (or reduce) color mixing in sub-pixels SP when the contact area CA generates colored light with a different wavelength than the emission area EA due to lateral leakage current, thereby improving the color gamut of sub-pixels SP.

[0057] Therefore, in this embodiment, a microcavity structure can be formed in the contact area CA of each sub-pixel SP, which can generate colored light with a wavelength substantially the same as that of each sub-pixel SP.

[0058] The microcavity structure of the contact area CA in this embodiment can be described in more detail below.

[0059] Figure 4 , Figure 5 and Figure 6 They are along Figure 1 Cross-sectional views taken from lines IV-IV', V-V', and VI-VI'. Figure 4 The structure of the emission and contact regions of the red sub-pixel is shown. Figure 5 The structure of the emission and contact regions of the green sub-pixel is shown, and Figure 6 The structure of the emission and contact regions of the blue sub-pixel is shown.

[0060] Reference Figures 4 to 6 as well as Figures 1 to 3 This can be used to describe the cross-sectional structure of the light-emitting display device 10 in this embodiment.

[0061] The substrate 101 of the light-emitting display device 10 can be an insulating substrate, such as a glass substrate or a plastic substrate. As another example, the substrate 101 can be a silicon substrate (or silicon wafer) formed from crystalline silicon (e.g., single-crystal silicon) used as a semiconductor, and thus can be referred to as a semiconductor substrate. In this case, the advantage is that it allows for the efficient realization of small-sized display devices that require high resolution.

[0062] In this embodiment, an insulating substrate is used as an example for ease of explanation.

[0063] Multiple thin-film transistors (TRs) can be formed in each sub-pixel (SP) on the substrate 101. Meanwhile, in this embodiment, for ease of explanation, in... Figure 3 In the diagram, a thin-film transistor (TR) connected to a light-emitting diode (OD) is shown in each sub-pixel (SP). The thin-film transistor (TR) can be an emitter control transistor or a driver transistor, but is not limited to these.

[0064] A thin-film transistor (TR) may include a semiconductor layer, a gate insulating layer, a gate electrode, a source electrode, and a drain electrode. Here, a thin-film transistor TR may be a bottom-gate structure having a gate electrode positioned below the semiconductor layer, or it may be a top-gate structure having a gate electrode positioned above the semiconductor layer.

[0065] When a semiconductor substrate is used as substrate 101, an active region that serves as a semiconductor layer can be formed within the semiconductor substrate.

[0066] A passivation layer 111 can be formed on the thin-film transistor TR. The passivation layer 111 can be formed as a single layer or a multilayer structure. The passivation layer 111 can be formed from organic insulating materials and / or inorganic insulating materials.

[0067] The passivation layer 111 may be formed substantially over the entire surface of the substrate 101, while simultaneously covering the thin-film transistor TR. The passivation layer 111 may have a flat upper surface, but is not limited thereto. For example, at least the upper portion of the passivation layer 111 may be formed by a planarization layer.

[0068] A drain contact hole CHd can be formed in the passivation layer 111, which is a contact hole that exposes one electrode of the thin film transistor TR (e.g., the drain electrode of the thin film transistor TR).

[0069] A conductive pattern 115 can be formed within the drain contact hole CHd of the passivation layer 111, and the conductive pattern 115 can contact the drain electrode of the thin film transistor TR.

[0070] On the substrate 101 on which the passivation layer 111 is formed, for example, a reflector RT that realizes a microcavity structure may be formed corresponding to the red sub-pixel SPr (more specifically, the first emission region EA1). The reflector RT formed in the red sub-pixel SPr may be referred to as the first reflector RT1.

[0071] Here, the first reflector RT1 may be formed of a highly reflective metal, such as, but not limited to, Ag, Al, Mo, Ti or APC (Al-Pd-Cu) alloy.

[0072] Reference Figure 3 On the passivation layer 111, a first connection electrode (or first intermediate electrode) CE1 can be formed in the contact area CA of each sub-pixel SP. For example, the first connection electrode CE1 can be made of the same material as the first reflector RT1 and formed in the same process as the first reflector RT1, so the first connection electrode CE1 can be positioned in the same layer as the first reflector RT1.

[0073] The first connection electrode CE1 formed in the contact region CA can be connected to the thin film transistor TR by contacting the conductive pattern 115 that fills the drain contact hole CHd.

[0074] In the red sub-pixel SPr, the first reflector RT1 and the first connecting electrode CE1 can be integrally formed. In this respect, the first reflector RT1 can be formed to extend from the first connecting electrode CE1 to the first emission region EA1. As another example, the first reflector RT1 and the first connecting electrode CE1 can be formed separately and in a disconnected form.

[0075] A first insulating layer (or dielectric layer) 121 may be formed on a substrate 101 on which the first reflector RT1 and the first connecting electrode CE1 are formed. The first insulating layer 121 may be formed as a single layer or a multilayer structure. The first insulating layer 121 may be formed of organic insulating materials and / or inorganic insulating materials.

[0076] The first insulating layer 121 may be formed substantially on the entire surface of the substrate 101, thereby covering the first reflector RT1 and the first connecting electrode CE1.

[0077] Here, a first contact hole CH1 can be formed in the first insulating layer 121 to expose the first connection electrode CE1 in the contact area CA of each sub-pixel SP.

[0078] On the substrate 101 on which the first insulating layer 121 is formed, for example, a reflector RT that realizes a microcavity structure may be formed corresponding to the green sub-pixel SPg (more specifically, the second emission region EA2). The reflector RT formed in the green sub-pixel SPg may be referred to as the second reflector RT2.

[0079] Here, similar to the first reflector RT1, the second reflector RT2 can be formed of a highly reflective metal, such as Ag, Al, Mo, Ti or APC (Al-Pd-Cu) alloy, but is not limited to this.

[0080] Reference Figure 3 On the first insulating layer 121, a second connection electrode (or a second intermediate electrode) CE2 may be formed in the contact area CA of each sub-pixel SP. For example, the second connection electrode CE2 may be made of the same material as the second reflector RT2 and formed in the same process as the second reflector RT2, so the second connection electrode CE2 may be positioned in the same layer as the second reflector RT2.

[0081] The second connection electrode CE2 formed in the contact region CA can contact the first connection electrode CE1 through the first contact hole CH1. Therefore, the second connection electrode CE2 can be connected to the thin-film transistor TR.

[0082] In the green sub-pixel SPg, the second reflector RT2 and the second connecting electrode CE2 can be integrally formed. In this case, the second reflector RT2 can be formed to extend from the second connecting electrode CE2 to the second emission region EA2. As another example, the second reflector RT2 and the second connecting electrode CE2 can be formed separately and in a disconnected form.

[0083] A second insulating layer (or dielectric layer) 122 may be formed on the substrate 101 on which the second reflector RT2 and the second connecting electrode CE2 are formed. The second insulating layer 122 may be formed as a single layer or a multilayer structure. The second insulating layer 122 may be formed of organic insulating materials and / or inorganic insulating materials.

[0084] The second insulating layer 122 may be formed substantially on the entire surface of the substrate 101, thereby covering the second reflector RT2 and the second connecting electrode CE2.

[0085] Here, a second contact hole CH2 can be formed in the second insulating layer 122 to expose the second connection electrode CE2 in the contact area CA of each sub-pixel SP.

[0086] The second contact hole CH2 may be formed at a position that is spaced apart from and does not overlap with the first contact hole CH1, but is not limited thereto.

[0087] Reference Figure 2 On the substrate 101 where the second insulating layer 122 is formed, for example, a reflector RT that realizes a microcavity structure may be formed corresponding to the blue sub-pixel SPb (or more specifically, the third emission region EA3). The reflector RT formed in the blue sub-pixel SPb may be referred to as the third reflector RT3.

[0088] Here, similar to the first reflector RT1 and the second reflector RT2, the third reflector RT3 can be formed of a highly reflective metal, such as Ag, Al, Mo, Ti or APC (Al-Pd-Cu) alloy, but is not limited to this.

[0089] Reference Figure 3 On the second insulating layer 122, a third connecting electrode (or third intermediate electrode) CE3 can be formed in the contact area CA of each sub-pixel SP. For example, the third connecting electrode CE3 can be made of the same material as the third reflector RT3 and formed in the same process as the third reflector RT3, so the third connecting electrode CE3 can be positioned in the same layer as the third reflector RT3.

[0090] The third connection electrode CE3 formed in the contact region CA can contact the second connection electrode CE2 through the second contact hole CH2. Therefore, the third connection electrode CE3 can be connected to the thin-film transistor TR.

[0091] In the blue sub-pixel SPb, the third reflector RT3 and the third connecting electrode CE3 can be integrally formed. In this case, the third reflector RT3 can be formed to extend from the third connecting electrode CE3 to the third emission region EA3. As another example, the third reflector RT3 and the third connecting electrode CE3 can be formed separately and in a disconnected form.

[0092] The first electrode AE ​​of the light-emitting diode OD constituting each sub-pixel SP can be formed on a substrate 101 having a third reflector RT3 and a third connecting electrode CE3.

[0093] For example, a first electrode AE ​​can be formed for each sub-pixel SP, and the first electrodes AE of adjacent sub-pixels SP can be separated and disconnected from each other.

[0094] The first electrode AE ​​can be continuously formed along the emission region EA and contact region CA of each sub-pixel SP.

[0095] In this case, a portion of the first electrode AE ​​located in the emission region EA can constitute the lower electrode of the light-emitting diode OD.

[0096] Furthermore, a portion of the first electrode AE ​​located in the contact area CA may, for example, be formed along the upper surface of the third connecting electrode CE3 and in contact with the upper surface of the third connecting electrode CE3.

[0097] Therefore, in each sub-pixel SP, the first electrode AE ​​can be electrically connected to the thin-film transistor TR via the first connection electrode CE1 to the third connection electrode CE3 formed in the contact area CA.

[0098] Here, in the blue sub-pixel SPb, the first electrode AE ​​can contact the third reflector RT3 located below the third emission region EA3. Furthermore, in the red sub-pixel SPr, the first electrode AE ​​can contact the second insulating layer 122 located below the first emission region EA1. Furthermore, in the green sub-pixel SPg, the first electrode AE ​​can contact the second insulating layer 122 located below the second emission region EA2.

[0099] The first electrode AE ​​may be formed of, for example, a transparent electrode with transmission properties. The first electrode AE ​​may be formed of, for example, a transparent conductive material (such as ITO, IZO or ITZO), but is not limited thereto.

[0100] The first electrode AE, which constitutes the light-emitting diode OD and is located below the light-emitting layer 145, can be referred to as the main electrode AE1.

[0101] On the substrate 101 on which the main electrode AE1 is formed, the emission region EA and the contact region CA of each sub-pixel SP can have different stacked structures.

[0102] Regarding the stacked structure of the emission region EA, a light-emitting layer 145 can be formed on the main electrode AE1, and a second electrode (or cathode electrode) CAE can be formed on the light-emitting layer 145.

[0103] Thus, the main electrode AE1, the light-emitting layer 145, and the second electrode CAE, which are sequentially stacked in the emission region EA, can form a light-emitting diode OD.

[0104] Here, the light-emitting layer 145 can be configured as a white light-emitting layer that emits white light. Therefore, the light-emitting diodes OD of all sub-pixels SP can produce the same white light.

[0105] The second electrode CAE can be configured as a semi-transparent electrode. The second electrode CAE can be formed of a metal, such as, but not limited to, Mg, Ag, or an alloy of Mg and Ag (Mg:Ag).

[0106] The semi-transparent second electrode CAE, together with the reflector RT positioned below it, enables the microcavity structure of the emission region EA of each sub-pixel SP.

[0107] For example, in the first emission region EA1 of the red sub-pixel SPr, a microcavity structure configured with a first reflector RT1 and a second electrode CAE spaced apart by a first resonant distance d1 can be realized. Therefore, in the first emission region EA1 of the red sub-pixel SPr, white light generated from the light-emitting diode OD can be reflected between the first reflector RT1 and the second electrode CAE, thereby generating red light according to the microcavity effect and outputting it upward.

[0108] In the second emission region EA2 of the green sub-pixel SPg, a microcavity structure can be realized, which is configured to have a second reflector RT2 and a second electrode CAE spaced apart by a second resonant distance d2. Therefore, in the second emission region EA2 of the green sub-pixel SPg, white light generated from the light-emitting diode OD can be reflected between the second reflector RT2 and the second electrode CAE, thereby generating green light according to the microcavity effect and outputting it upward.

[0109] In the third emission region EA3 of the blue sub-pixel SPb, a microcavity structure can be realized, which is configured to have a third reflector RT3 and a second electrode CAE spaced apart by a third resonant distance d3. Therefore, in the third emission region EA3 of the blue sub-pixel SPb, white light generated from the light-emitting diode OD can be reflected between the third reflector RT3 and the second electrode CAE, thereby generating blue light according to the microcavity effect and outputting it upward.

[0110] In addition, a dike (or partition or fence) 143 can be formed along the boundary (or edge) of each sub-pixel SP and around the sub-pixel SP.

[0111] The dam 143 may be formed of inorganic or organic insulating materials. The dam 143 may be formed of a transparent insulating material that transmits light. For example, the dam 143 may be formed of at least one of acrylic resin, epoxy resin, phenolic resin, polyamide-based resin, polyimide-based resin, unsaturated polyester-based resin, polyphenyl resin, polyphenylene sulfide-based resin, benzocyclobutene, and photoresist, but is not limited thereto.

[0112] The embankment 143 may have an opening that exposes the main electrode AE1 of each sub-pixel SP, and may be formed to cover the edge of the main electrode AE1 (or the first electrode AE). The opening of the embankment 143 may define the emission region EA (or light-emitting diode OD) within the sub-pixel SP.

[0113] A trench TC may be formed in the embankment 143 and in at least a portion of the insulating layer stacked below the embankment 143. For example, the trench TC may be formed along the boundary between sub-pixels SP of different colors in the column direction. Alternatively, in some cases, the trench TC may also be formed along the boundary between sub-pixels SP of the same color in the row direction.

[0114] In this regard, for example, a trench TC may be formed between the emission regions EA of adjacent sub-pixels SP in the embankment 143 and in at least a portion of the first insulating layer 121, the second insulating layer 122, and the passivation layer 111. In this embodiment, for ease of explanation, an example of forming a trench TC in the embankment 143, the first insulating layer 121, the second insulating layer 122, and the passivation layer 111 is provided as an example.

[0115] By forming the trench TC in this way, at least the lower part of the light-emitting layer 145 can be separated between adjacent sub-pixels SP, thereby preventing (or reducing) lateral leakage current between sub-pixels SP.

[0116] In this respect, the light-emitting layer 145 can be, for example, an organic light-emitting layer formed using organic materials. Furthermore, the light-emitting layer 145 can be formed as a multilayer structure including layers of emitting material that actually emit light.

[0117] The light-emitting layer 145 can be formed as a single stacked structure or a multi-stacked structure.

[0118] When the light-emitting layer 145 is formed as a single stacked structure, the light-emitting layer 145 can be separated by trench TC.

[0119] When the light-emitting layer 145 is formed as a multi-stack structure, a charge-generating layer can be disposed between adjacent stacks. In this case, for example, the lower stack and the charge-generating layer located on the lower stack can be separated by a trench TC, and the upper stack can have a state in which at least the upper part of the upper stack is not separated by the trench TC and is connected on the trench TC.

[0120] The second electrode CAE located on the light-emitting layer 145 can be continuously formed between adjacent sub-pixels SP without being separated by trench TC. Therefore, the second electrode CAE can be formed substantially continuously along all sub-pixels SP of the display area AA.

[0121] Regarding the layered structure of the contact region CA, refer to... Figures 3 to 6 A microcavity structure with a resonant distance capable of emitting the colored light of each sub-pixel SP can be formed in the contact area CA of each sub-pixel SP.

[0122] For example, the planarization pattern PL can be formed on the main electrode AE1 in the contact areas (CA: CA1, CA2 and CA3) of the red sub-pixel SPr, the green sub-pixel SPg and the blue sub-pixel SPb.

[0123] The planarization pattern PL can be formed as a single layer or multiple layers. The planarization pattern PL can be formed from (but is not limited to) organic insulating materials.

[0124] When forming the planarization pattern PL, the contact area CA of the red sub-pixel SPr, green sub-pixel SPg, and blue sub-pixel SPb can have a substantially flat surface. For example, the contact area CA of the red sub-pixel SPr, green sub-pixel SPg, and blue sub-pixel SPb can be configured such that the upper surface of their planarization pattern PL can be substantially flat and at the same height.

[0125] In this respect, since the first contact hole CH1 and the second contact hole CH2 are formed in the contact region CA, the surface of the layer (e.g., the third connecting electrode CE3) on the substrate 101 where the main electrode AE1 is formed can have an uneven shape that follows the shape of the first contact hole CH1 and the second contact hole CH2. When such an uneven shape exists, the main electrode AE1 can have an uneven shape, and therefore the microcavity structure in the contact region CA can also have an uneven shape. This can lead to the generation of light with a different color in the corresponding contact region CA than the light generated in the emission region EA, resulting in color mixing.

[0126] However, in this embodiment, the planarization pattern PL can be formed on the main electrode AE1, such that the upper surface of the planarization pattern PL in the contact area CA can be substantially flat. Therefore, color mixing caused by different colors of light generated in the contact area CA due to the uneven shape caused by the first contact hole CH1 and the second contact hole CH2 can be prevented or reduced.

[0127] On the planarized pattern PL, in each contact area (CA: CA1, CA2 and CA3) of the red sub-pixel SPr, the green sub-pixel SPg and the blue sub-pixel SPb, a fourth reflector RT4 can be formed as a reflector RT that realizes the microcavity structure of each contact area CA.

[0128] Here, similar to the first reflector RT1 to the third reflector RT3, the fourth reflector RT4 can be formed of a highly reflective metal, such as Ag, Al, Mo, Ti or APC (Al-Pd-Cu) alloy, but is not limited to this.

[0129] In order to realize the microcavity structure for generating the colored light of each sub-pixel SP in the contact area CA of each sub-pixel SP on the fourth reflector RT4, different stacked structures can be formed between the sub-pixels SP.

[0130] In this regard, for example, in the first contact area CA1 of the red sub-pixel SPr, in order to set its fourth resonant distance dc1, an insulating pattern (e.g., a first insulating pattern IL1 and a second insulating pattern IL2) can be formed on the fourth reflector RT4 to cover the fourth reflector RT4. Furthermore, on the stacked structure formed by the first insulating pattern IL1 and the second insulating pattern IL2, an auxiliary electrode AE2 constituting the first electrode AE ​​of the red sub-pixel SPr can be formed.

[0131] Here, refer to Figure 4 The auxiliary electrode AE2 formed in the first contact region CA1 can be formed, for example, to cover the side surface of a stacked structure positioned below it and configured to have a first insulating pattern IL1 and a second insulating pattern IL2, a fourth reflector RT4, and a planarization pattern PL. Therefore, the auxiliary electrode AE2 can extend along the side surface of the stacked structure located below it and contact the main electrode AE1 at the boundary between the first emission region EA1 and the first contact region CA1.

[0132] Therefore, the red sub-pixel SPr may be provided with a first electrode AE ​​configured to have a main electrode AE1 and an auxiliary electrode AE2. Furthermore, a stacked structure including a fourth reflector RT4 that realizes a microcavity structure of a first contact region CA1 may be formed between the main electrode AE1 and the auxiliary electrode AE2.

[0133] In the second contact area CA2 of the green sub-pixel SPg, in order to set its fifth resonant distance dc2, an insulating pattern (e.g., a first insulating pattern IL1) can be formed on the fourth reflector RT4 to cover the fourth reflector RT4. Furthermore, an auxiliary electrode AE2 constituting the first electrode AE ​​of the green sub-pixel SPg can be formed on the first insulating pattern IL1.

[0134] Here, refer to Figure 5 The auxiliary electrode AE2 formed in the second contact region CA2 can be formed, for example, to cover the side surface of the stacked structure located below it and configured to have a first insulating pattern IL1, a fourth reflector RT4, and a planarization pattern PL. Therefore, the auxiliary electrode AE2 can extend along the side surface of the stacked structure located below it and contact the main electrode AE1 at the boundary between the second emission region EA2 and the second contact region CA2.

[0135] Therefore, the green sub-pixel SPg may be provided with a first electrode AE ​​configured to have a main electrode AE1 and an auxiliary electrode AE2. Furthermore, a stacked structure including a fourth reflector RT4 that realizes a microcavity structure for the second contact region CA2 may be formed between the main electrode AE1 and the auxiliary electrode AE2.

[0136] In the third contact region CA3 of the blue sub-pixel SPb, in order to set its sixth resonant distance dc3, a separate insulating pattern may not be formed on the fourth reflector RT4. In this case, an auxiliary electrode AE2 constituting the first electrode AE ​​of the blue sub-pixel SPb may be formed on the fourth reflector RT4.

[0137] Here, refer to Figure 6 The auxiliary electrode AE2 formed in the third contact region CA3 can be formed, for example, to cover the side surface of the stacked structure positioned below it and configured to have a fourth reflector RT4 and a planarization pattern PL. Therefore, the auxiliary electrode AE2 can extend along the side surface of the stacked structure located below it and contact the main electrode AE1 at the boundary between the third emission region EA3 and the third contact region CA3.

[0138] Therefore, the blue sub-pixel SPb may be provided with a first electrode AE ​​configured to have a main electrode AE1 and an auxiliary electrode AE2. Furthermore, a stacked structure including a fourth reflector RT4 that realizes a microcavity structure of a third contact region CA3 may be formed between the main electrode AE1 and the auxiliary electrode AE2.

[0139] In the contact area CA of the red, green and blue sub-pixels SP, a dam 143 can be formed on the auxiliary electrode AE2 to cover the auxiliary electrode AE2.

[0140] In this way, the embankment 143 can cover the auxiliary electrode AE2 in the contact area CA of each sub-pixel SP, thereby preventing the light-emitting layer 145 from contacting the auxiliary electrode AE2 in the contact area CA.

[0141] Therefore, the embankment 143 can be substantially formed around the emission region EA to surround the emission region EA, such that the embankment 143 can cover the non-emission region (including the contact region CA) of the sub-pixel SP. Thus, the embankment 143 can cover the edge of the first electrode AE ​​positioned along the periphery of the emission region EA. In this respect, the embankment 143 can cover the edge of the main electrode AE1 and the entire auxiliary electrode AE2.

[0142] Meanwhile, as described above, the trench TC may be formed in the embankment 143 and in at least a portion of the insulating layer stacked below the embankment 143.

[0143] In this regard, for example, the trench TC may be formed between the contact areas CA of adjacent sub-pixels SP in the embankment 143 and in at least a portion of the first insulating pattern IL1 and the second insulating pattern IL2, the planarization pattern PL, the first insulating layer 121 and the second insulating layer 122, and the passivation layer 111. In this embodiment, for ease of explanation, an example of forming the trench TC in the embankment 143, the first insulating pattern IL1 and the second insulating pattern IL2, the planarization pattern PL, the first insulating layer 121 and the second insulating layer 122, and the passivation layer 111 is given as an example.

[0144] In the contact area CA of the red, green and blue sub-pixels SP, the light-emitting layer 145 can be formed on the embankment 143.

[0145] The light-emitting layer 145 may be formed continuously, for example, along the emission region EA and contact region CA of each sub-pixel SP. Furthermore, at least the lower portion of the light-emitting layer 145 may be separated between adjacent sub-pixels SP by trenches TC, thereby preventing (or reducing) lateral leakage current between sub-pixels SP.

[0146] In the contact area CA of the red, green and blue sub-pixels SP, the second electrode CAE can be formed on the light-emitting layer 145.

[0147] The second electrode CAE can be formed, for example, continuously along the emitter region EA and contact region CA of each sub-pixel SP. Furthermore, the second electrode CAE can be formed continuously between adjacent sub-pixels SP without being separated by trenches TC.

[0148] The second electrode CAE, which has semi-transparent properties, together with the fourth reflector RT4 positioned below it, can realize the microcavity structure of the contact area CA of each sub-pixel SP.

[0149] For example, in the first contact region CA1 of the red sub-pixel SPr, a microcavity structure can be realized, which is configured to have a fourth reflector RT4 and a second electrode CAE spaced apart by a fourth resonant distance dc1. Therefore, in the first contact region CA1 of the red sub-pixel SPr, light generated by the lateral leakage current from the first emission region EA1 can be reflected between the fourth reflector RT4 and the second electrode CAE, thereby generating red light from the red sub-pixel SPr and outputting it upwards according to the microcavity effect.

[0150] In the second contact region CA2 of the green sub-pixel SPg, a microcavity structure can be realized, which is configured to have a fourth reflector RT4 and a second electrode CAE spaced apart by a fifth resonant distance dc2. Therefore, in the second contact region CA2 of the green sub-pixel SPg, light generated by the lateral leakage current from the second emission region EA2 can be reflected between the fourth reflector RT4 and the second electrode CAE, thereby generating green light from the green sub-pixel SPg and outputting it upwards according to the microcavity effect.

[0151] In the third contact region CA3 of the blue sub-pixel SPb, a microcavity structure can be realized, which is configured to have a fourth reflector RT4 and a second electrode CAE spaced apart by a sixth resonant distance dc3. Therefore, in the third contact region CA3 of the blue sub-pixel SPb, light generated by the lateral leakage current from the third emission region EA3 can be reflected between the fourth reflector RT4 and the second electrode CAE, thereby generating blue light from the blue sub-pixel SPb and outputting it upwards according to the microcavity effect.

[0152] As described above, in this embodiment, a planarization pattern PL can be formed for the contact area CA of the sub-pixel SP. The planarization pattern PL flattens the uneven shape of the surface of the layer (e.g., the main electrode AE1) located below it and on the substrate (due to the first contact hole CH1 and the second contact hole CH2). The stacked structure (or the thickness of the stacked structure) including the fourth reflector RT4 located on the planarization pattern PL can be distinguished according to the sub-pixel SP, thereby realizing a microcavity structure having a resonant distance for emitting the colored light of each sub-pixel SP.

[0153] In this way, in the contact area CA of each sub-pixel SP, a microcavity structure capable of generating colored light with a wavelength substantially the same as that of the sub-pixel SP can be formed on the flat surface of the planarization pattern PL.

[0154] Therefore, color mixing caused by uneven shapes due to the first contact hole CH1 and the second contact hole CH2, resulting in different colored light generated by the contact area CA compared to the emission area EA in the light output from the sub-pixel SP, can be prevented or reduced, thereby improving the color gamut.

[0155] Furthermore, the light output area of ​​the sub-pixel SP can extend to the contact area CA, thereby increasing the aperture ratio.

[0156] <Second Embodiment>

[0157] Figure 7 This is a cross-sectional view showing the structure of the emitting region of a sub-pixel of a light-emitting display device according to a second embodiment of the present invention, which is along a path similar to... Figure 1 The line II-II' is intercepted. Figure 8 , Figure 9 and Figure 10 These are cross-sectional views showing the structures of the emission and contact regions of the red, green, and blue sub-pixels according to a second embodiment of the present invention, respectively, along a path similar to... Figure 1 The lines IV-IV', V-V', and VI-VI' are cut off.

[0158] In the following description, detailed descriptions of components that are the same as or similar to those in the first embodiment described above may be omitted.

[0159] Reference Figures 7 to 10 In the light-emitting display device 10 of this embodiment, similar to the first embodiment, a microcavity structure capable of generating colored light with a wavelength substantially the same as that of the emission region EA of the sub-pixel SP can be formed for the contact area CA of each sub-pixel SP.

[0160] Meanwhile, in this embodiment, when a microcavity structure is realized in the contact area CA, a recessed space (or recessed area) DS can be formed in the contact area CA to accommodate (or arrange) the contact structure and the microcavity structure.

[0161] In this regard, in the first embodiment described above, in each sub-pixel SP, the contact region CA may be formed with a structure that substantially forms a microcavity structure on the main electrode AE1 of the first electrode AE, such that the microcavity structure of the contact region CA can be positioned at a higher position than the microcavity structure of the emission region EA. Therefore, the contact region CA may have a shape that protrudes upwards compared to the emission region EA, resulting in the surface of the top layer on the substrate being uneven rather than flat.

[0162] Meanwhile, in this embodiment, a recessed space DS can be formed in the contact area CA, and contact structures and microcavity structures can be arranged in the recessed space DS, so that the surface of the contact area CA and the surface of the emission area EA can be substantially positioned on the same plane, thereby providing the advantage that the top layer on the substrate 101 (under which the light-emitting diode OD is formed) can have an overall flat surface.

[0163] The microcavity structure of the emission region EA and the microcavity structure of the contact region CA in this embodiment can be described in more detail.

[0164] Passivation layer 111 can be formed thereon on which thin-film transistors are formed ( Figure 3 On the substrate 101 of TR in the middle.

[0165] For example, the passivation layer 111 can be formed as a stepped structure with different thicknesses (or heights) between the emission region EA and the contact region EA in each sub-pixel SP. In this respect, in each sub-pixel EA, the first portion PAS1, which is part of the passivation layer 111 and is formed in the emission region EA, can have a relatively large thickness, while the second portion (or recessed portion) PAS2, which is part of the passivation layer 111 and is formed in the contact region EA, can have a relatively small thickness. Therefore, the passivation layer 111 can be formed as a stepped structure, wherein the contact region EA is recessed within each sub-pixel SP.

[0166] Here, the first portion PAS1 of the passivation layer 111 can be formed to have the same thickness, for example, in the red sub-pixel SPr, the green sub-pixel SPg, and the blue sub-pixel SPb.

[0167] Meanwhile, the second part PAS2 of the passivation layer 111 may have different thicknesses, for example, in the red sub-pixel SPr, the green sub-pixel SPg, and the blue sub-pixel SPb.

[0168] In this regard, for example, for the red sub-pixel SPr, the passivation layer 111 formed in the first emission region EA1, specifically in a first portion PAS1, may have a first thickness t1, and the passivation layer 111 formed in the first contact region CA1, specifically in a second portion PAS2 (i.e., the first second portion PAS2_1), may have a second thickness t2 (i.e., the first second thickness t2_1) that is less than the first thickness t1. In other words, the upper surface of the first second portion PAS2_1 of the passivation layer 111 may be positioned at a lower height than the upper surface of the first portion PAS1. In this case, an inclined surface may be formed at the boundary between the first portion PAS1 and the first second portion PAS2_1.

[0169] Therefore, in the red sub-pixel SPr, the first contact region CA1 can be recessed to a thickness smaller than that of the first emission region EA1, allowing a stepped structure to be formed between the first emission region EA1 and the first contact region CA1. Furthermore, due to its recessed shape, the first contact region CA1 can be defined as a first recessed space DS1. The depth of the first recessed space DS1 can be set to achieve a fourth resonant distance dc1 of the microcavity structure formed in the first contact region CA1.

[0170] For the green sub-pixel SPg, the passivation layer 111 formed in the first portion PAS1 of the second emission region EA2 may have a first thickness t1. Furthermore, the passivation layer 111 formed in the second contact region CA2 in the second portion PAS2 (i.e., the second second portion PAS2_2) may have a second thickness t2 (i.e., a second second thickness t2_2) that is less than the first thickness t1. In other words, the upper surface of the second second portion PAS2_2 of the passivation layer 111 may be positioned at a lower height than the upper surface of the first portion PAS1. In this case, a sloping surface may be formed at the boundary between the first portion PAS1 and the second second portion PAS2_2.

[0171] Therefore, the first part PAS1 of the green sub-pixel SPg can be formed to have substantially the same thickness as the first part PAS1 of the red sub-pixel SPr, such that the emission region EA of the green sub-pixel SPg and the emission region EA of the red sub-pixel SPr can be formed to have passivation layers 111 of the same thickness.

[0172] Furthermore, the second second part PAS2_2 of the green sub-pixel SPg can be formed to have a greater thickness than the first second part PAS2_1 of the red sub-pixel SPr (i.e., t2_2>t2_1), so that the contact area CA of the green sub-pixel SPg and the contact area CA of the red sub-pixel SPr can be formed as passivation layers 111 with different thicknesses.

[0173] Therefore, in the green sub-pixel SPg, the second contact region CA2 can be recessed to a thickness smaller than that of the second emission region EA2, allowing a stepped structure to be formed between the second emission region EA2 and the second contact region CA2. Furthermore, due to its recessed shape, a second recessed space DS2, serving as a recessed space DS, can be defined within the second contact region CA2. The depth of the second recessed space DS2 can be set to achieve a fifth resonant distance dc2 of the microcavity structure formed in the second contact region CA2. In this respect, the depth of the second recessed space DS2 of the green sub-pixel SPg can be formed to be smaller than the depth of the first recessed space DS1 of the red sub-pixel SPr.

[0174] For the blue sub-pixel SPb, the passivation layer 111 formed in the first portion PAS1 of the third emission region EA3 may have a first thickness t1. Furthermore, the passivation layer 111 formed in the second portion PAS2 (i.e., the third second portion PAS2_3) of the third contact region CA3 may have a second thickness t2 (i.e., a third second thickness t2_3) less than the first thickness t1. In other words, the upper surface of the third second portion PAS2_3 of the passivation layer 111 can be positioned at a lower height than the upper surface of the first portion PAS1. In this case, a sloping surface can be formed at the boundary between the first portion PAS1 and the third second portion PAS2_3.

[0175] Therefore, the first part PAS1 of the blue sub-pixel SPb can be formed to have a thickness that is substantially the same as the first part PAS1 of the red sub-pixel SPr and the first part PAS1 of the green sub-pixel SPg, such that the emission region EA of the blue sub-pixel SPb, the emission region EA of the green sub-pixel SPg and the emission region EA of the red sub-pixel SPr can be formed as passivation layers 111 with the same thickness.

[0176] Furthermore, the third second part PAS2_3 of the blue sub-pixel SPb can be formed to have a greater thickness than the second second part PAS2_2 of the green sub-pixel SPg (i.e., t2_3>t2_2), so that the contact area CA of the blue sub-pixel SPb, the contact area CA of the green sub-pixel SPg and the contact area CA of the red sub-pixel SPr can be formed as passivation layers 111 with different thicknesses.

[0177] Therefore, in the blue sub-pixel SPb, the third contact region CA3 can be recessed to a thickness smaller than that of the third emission region EA3, allowing a stepped structure to be formed between the third emission region EA3 and the third contact region CA3. Furthermore, due to its recessed shape, the third contact region CA3 can define a third recessed space DS3 as a recessed space DS. The depth of the third recessed space DS3 can be set to achieve a sixth resonant distance dc3 of the microcavity structure formed in the third contact region CA3. In this respect, the depth of the third recessed space DS3 of the blue sub-pixel SPb can be formed to have a depth smaller than that of the second recessed space DS2 of the green sub-pixel SPg.

[0178] As described above, the passivation layer 111 can be formed as a stepped structure, wherein the contact region CA is recessed in each sub-pixel SP.

[0179] On a substrate 101 on which a passivation layer 111 is formed, a first reflector RT1 can be formed to realize a microcavity structure corresponding to the red sub-pixel SPr (specifically, the first emission region EA1).

[0180] Furthermore, on the passivation layer 111, a first connection electrode CE1 may be formed in the contact region CA of each sub-pixel SP. In this respect, the first connection electrode CE1 may be formed on the second recessed portion PAS2 of the passivation layer 111.

[0181] For example, further reference Figure 3 The first connection electrode CE1 formed in the contact region CA can be connected to the thin film transistor TR by contacting the conductive pattern 115 that fills the drain contact hole CHd.

[0182] In the red sub-pixel SPr, the first reflector RT1 and the first connecting electrode CE1 can be integrally formed.

[0183] The first insulating layer 121 may be formed on the substrate 101 on which the first reflector RT1 and the first connecting electrode CE1 are formed. The first insulating layer 121 may be formed as a stepped structure that follows and is substantially the same as the stepped structure of the passivation layer 111 located below it.

[0184] Therefore, essentially similar to passivation layer 111, the height of the upper surface of the first insulating layer 121 can also be distinguished among the contact areas CA of the red sub-pixel SPr, the green sub-pixel SPg, and the blue sub-pixel SPb.

[0185] Further reference Figure 3 In the first insulating layer 121, a first contact hole CH1 may be formed to expose the first connection electrode CE1 in the contact area CA of each sub-pixel SP.

[0186] On a substrate 101 on which a first insulating layer 121 is formed, a second reflector RT2 can be formed to realize a microcavity structure corresponding to the green sub-pixel SPg (specifically, the second emission region EA2).

[0187] On the first insulating layer 121, a second connecting electrode CE2 may be formed in the contact region CA of each sub-pixel SP. In this respect, the second connecting electrode CE2 may be formed on a portion of the first insulating layer 121 located in the recessed space DS.

[0188] In the green sub-pixel SPg, the second reflector RT2 and the second connecting electrode CE2 can be integrally formed.

[0189] The second insulating layer 122 may be formed on the substrate 101 on which the second reflector RT2 and the second connecting electrode CE2 are formed. The second insulating layer 122 may be formed as a stepped structure that follows and is substantially the same as the stepped structure of the passivation layer 111 and the first insulating layer 121 located below it.

[0190] Therefore, essentially similar to passivation layer 111 and first insulating layer 121, the height of the upper surface of second insulating layer 122 can also be distinguished within the contact area CA of red sub-pixel SPr, the contact area CA of green sub-pixel SPg, and the contact area CA of blue sub-pixel SPb.

[0191] Further reference Figure 3 In the second insulating layer 122, a second contact hole CH2 may be formed to expose the second connection electrode CE2 in the contact area CA of each sub-pixel SP.

[0192] On the substrate 101 on which the second insulating layer 122 is formed, a third reflector RT3 can be formed to realize a microcavity structure corresponding to the blue sub-pixel SPb (specifically, the third emission region EA3).

[0193] On the second insulating layer 122, a third connecting electrode CE3 may be formed in the contact area CA of each sub-pixel SP. In this respect, the third connecting electrode CE3 may be formed on a portion of the second insulating layer 122 located in the recessed space DS.

[0194] In the blue sub-pixel SPb, the third reflector RT3 and the third connecting electrode CE3 can be integrally formed.

[0195] On a substrate 101 having a third reflector RT3 and a third connecting electrode CE3, the main electrode AE1 of the light-emitting diode OD constituting each sub-pixel SP can be formed, which is the first electrode AE.

[0196] The main electrode AE1 can be formed in a continuous manner along the emission region EA and contact region CA of each sub-pixel SP. The main electrode AE1 can be formed as a stepped structure that follows and is substantially the same as the stepped structure of the passivation layer 111 and the first insulating layer 121 and the second insulating layer 122 located below it.

[0197] On a substrate 101 having a main electrode AE1, a microcavity structure having a resonant distance capable of emitting colored light from the sub-pixel SP can be formed in the recessed space DS of the contact region CA of each sub-pixel SP.

[0198] For example, in the contact areas (CA: CA1, CA2 and CA3) of the red sub-pixel SPr, the green sub-pixel SPg and the blue sub-pixel SPb, a planarization pattern PL can be formed on the main electrode AE1.

[0199] On the planarized pattern PL, a fourth reflector RT4 can be formed in each contact area (CA: CA1, CA2 and CA3) of the red sub-pixel SPr, the green sub-pixel SPg and the blue sub-pixel SPb. This reflector RT is a reflector RT that realizes the microcavity structure in each contact area CA.

[0200] In order to realize the microcavity structure for emitting colored light for each sub-pixel SP on the fourth reflector RT4, different stacked structures can be formed in the sub-pixel SP.

[0201] In this regard, refer to Figure 8 In the first recessed space DS1 of the first contact area CA1 of the red sub-pixel SPr, in order to set its fourth resonant distance dc1, an insulating pattern, such as a first insulating pattern IL1 and a second insulating pattern IL2, can be formed on the fourth reflector RT4 to cover the fourth reflector RT4. Furthermore, on the stacked structure formed by the first insulating pattern IL1 and the second insulating pattern IL2, an auxiliary electrode AE2 constituting the first electrode AE ​​of the red sub-pixel SPr can be formed.

[0202] Here, the stacked structure formed by the planarization pattern PL, the fourth reflector RT4, the first insulating pattern IL1 and the second insulating pattern IL2, and the auxiliary electrode AE2 formed in the first contact area CA1 can be formed to substantially fill the recessed space defined by a portion of the main electrode AE1 located in the first contact area CA1.

[0203] The auxiliary electrode AE2 can be formed to contact the main electrode AE1 at the boundary between the first emission region EA1 and the first contact region CA1.

[0204] Therefore, the red sub-pixel SPr may be provided with a first electrode AE ​​configured to have a main electrode AE1 and an auxiliary electrode AE2. Furthermore, a stacked structure including a fourth reflector RT4 that realizes a microcavity structure of a first contact region CA1 may be formed between the main electrode AE1 and the auxiliary electrode AE2.

[0205] Therefore, in this embodiment, the stacked structure realizing the microcavity structure can be accommodated in the first recessed space DS1 of the first contact region CA1. Thus, in the red sub-pixel SPr, the first emission region EA1 and the first contact region CA1 can be formed with substantially flat surfaces.

[0206] Reference Figure 9In the second recessed space DS2 of the second contact region CA2 of the green sub-pixel SPg, in order to set its fifth resonant distance dc2, an insulating pattern, such as the first insulating pattern IL1, can be formed on the fourth reflector RT4. Furthermore, the auxiliary electrode AE2 constituting the first electrode AE ​​of the green sub-pixel SPg can be formed on the first insulating pattern IL1.

[0207] Here, the stacked structure formed by the planarization pattern PL, the fourth reflector RT4, the first insulating pattern IL1, and the auxiliary electrode AE2 formed in the second contact area CA2 can be formed to substantially fill the recessed space defined by a portion of the main electrode AE1 located in the second contact area CA2.

[0208] The auxiliary electrode AE2 can be formed to contact the main electrode AE1 at the boundary between the second emission region EA2 and the second contact region CA2.

[0209] Therefore, the green sub-pixel SPg may be provided with a first electrode AE ​​configured to have a main electrode AE1 and an auxiliary electrode AE2. Furthermore, a stacked structure including a fourth reflector RT4 that realizes a microcavity structure for the second contact region CA2 may be formed between the main electrode AE1 and the auxiliary electrode AE2.

[0210] In this embodiment, the stacked structure realizing the microcavity structure can be accommodated in the second recessed space DS2 of the second contact region CA2. Therefore, in the green sub-pixel SPg, the second emission region EA2 and the second contact region CA2 can be formed with substantially flat surfaces.

[0211] Reference Figure 10 In the third recessed space DS3 of the third contact region CA3 of the blue sub-pixel SPb, in order to set its sixth resonant distance dc3, a separate insulating pattern may not be formed on the fourth reflector RT4. In this case, the auxiliary electrode AE2 of the first electrode AE ​​constituting the blue sub-pixel SPb can be formed on the fourth reflector RT4.

[0212] Here, the stacked structure formed by the planarization pattern PL formed in the third contact region CA3, the fourth reflector RT4, and the auxiliary electrode AE2 can be formed to substantially fill the recessed space defined by a portion of the main electrode AE1 located in the third contact region CA3.

[0213] The auxiliary electrode AE2 can be formed to contact the main electrode AE1 at the boundary between the third emission region EA3 and the third contact region CA3.

[0214] Therefore, the blue sub-pixel SPb may be provided with a first electrode AE ​​configured to have a main electrode AE1 and an auxiliary electrode AE2. Furthermore, a stacked structure including a fourth reflector RT4 that realizes a microcavity structure of a third contact region CA3 may be formed between the main electrode AE1 and the auxiliary electrode AE2.

[0215] Therefore, in this embodiment, the stacked structure realizing the microcavity structure can be accommodated in the third recessed space DS3 of the third contact region CA3. Thus, in the blue sub-pixel SPb, the third emission region EA3 and the third contact region CA3 can be formed with substantially flat surfaces.

[0216] In the contact area CA of the red, green and blue sub-pixels SP, a dam 143 can be formed on the auxiliary electrode AE2 to cover the auxiliary electrode AE2.

[0217] Therefore, the embankment 143 can be substantially formed around the emission region EA to surround the emission region EA, thereby covering the non-emission region (including the contact region CA) of the sub-pixel SP. Thus, the embankment 143 can cover the edge of the first electrode AE ​​positioned along the periphery of the emission region EA.

[0218] Similar to the first embodiment, the trench TC may be formed in the embankment 143 and in at least a portion of the insulating layer stacked below the embankment 143.

[0219] The light-emitting layer 145 and the second electrode CAE can be formed on the substrate 101 on which the first electrode AE ​​and the embankment 143 are formed.

[0220] The light-emitting layer 145 and the second electrode CAE can be formed in a substantially flat state in each sub-pixel SP. Therefore, the light-emitting layer 145 and the second electrode CAE can be formed in a substantially flat state in the display area AA.

[0221] By forming a second electrode CAE with semi-transparent properties, a microcavity structure that realizes the colored light of the sub-pixel SP can be formed in the emission region EA and contact region CA of each sub-pixel SP.

[0222] <Third Embodiment>

[0223] Figure 11 , Figure 12 and Figure 13 These are cross-sectional views showing the structures of the emission regions and contact regions of the red, green, and blue sub-pixels according to a third embodiment of the present invention, respectively, along a path similar to... Figure 1 The lines IV-IV', V-V', and VI-VI' are cut off.

[0224] In the following description, detailed descriptions of components that are the same as or similar to those in the first embodiment described above may be omitted or provided briefly.

[0225] Reference Figures 11 to 13 In the light-emitting display device of this embodiment, similar to the first embodiment, a microcavity structure capable of generating colored light with a wavelength substantially the same as that of the emission region EA of the sub-pixel SP can be formed for the contact area CA of each sub-pixel SP.

[0226] In this embodiment, a light-emitting diode can be additionally disposed in the contact area CA of each sub-pixel SP. Therefore, the contact area CA can also be used as an effective emission area, thereby increasing the emission area of ​​the sub-pixel SP.

[0227] In this regard, for example, for each of the red sub-pixel SPr, the green sub-pixel SPg, and the blue sub-pixel SPb, the embankment 143 may have a first opening OP1, which is an opening that exposes the main electrode AE1 located in the emission region EA of the first electrode AE, similar to the first embodiment.

[0228] Therefore, a first light-emitting diode OD1, configured to have a main electrode AE1, a light-emitting layer 145, and a second electrode CAE stacked in the first opening OP1, can be formed in the emission region EA. The first light-emitting diode OD1 can be essentially used as the main (or primary) light-emitting diode of the sub-pixel SP, and the emission region EA in which the first light-emitting diode OD1 is formed can be used as the primary (or primary) emission region.

[0229] Furthermore, for each of the red sub-pixel SPr, the green sub-pixel SPg, and the blue sub-pixel SPb, the embankment 143 may have a second opening OP2, which is an opening that exposes the auxiliary electrode AE2 located in the contact region CA of the first electrode AE.

[0230] Therefore, a second light-emitting diode OD2, configured as having an auxiliary electrode AE2, a light-emitting layer 145, and a second electrode CAE stacked in the second opening OP2, can be formed in the contact region CA. The second light-emitting diode OD2 can essentially serve as an auxiliary light-emitting diode for the sub-pixel SP, and the contact region CA in which the second light-emitting diode OD2 is formed can serve as an auxiliary emission region.

[0231] As described above, in this embodiment, a second light-emitting diode OD2 can be additionally formed in the contact area CA, thereby increasing the emission area of ​​the sub-pixel SP. This improves the emission efficiency of the light-emitting display device.

[0232] <Fourth Embodiment>

[0233] Figure 14 , Figure 15 and Figure 16 These are cross-sectional views showing the structures of the emission regions and contact regions of the red, green, and blue sub-pixels according to a fourth embodiment of the present invention, respectively, along a path similar to... Figure 1 The lines IV-IV', V-V', and VI-VI' are cut off.

[0234] In the following description, detailed descriptions of components that are the same as or similar to those in the second embodiment may be omitted.

[0235] Reference Figures 14 to 16 In the light-emitting display device of this embodiment, similar to the second embodiment, a microcavity structure capable of generating colored light with a wavelength substantially the same as that of the emission region EA of the sub-pixel SP can be formed for the contact area CA of each sub-pixel SP.

[0236] In this embodiment, a light-emitting diode can be additionally disposed in the contact area CA of each sub-pixel SP. Therefore, the contact area CA can also be used as an effective emission area, thereby increasing the emission area of ​​the sub-pixel SP.

[0237] In this regard, for example, for each of the red sub-pixel SPr, the green sub-pixel SPg, and the blue sub-pixel SPb, the embankment 143 may have a first opening OP1, which is an opening that exposes the main electrode AE1 located in the emission region EA of the first electrode AE, similar to the second embodiment.

[0238] Therefore, a first light-emitting diode OD1, configured to have a main electrode AE1, a light-emitting layer 145, and a second electrode CAE stacked in the first opening OP1, can be formed in the emission region EA. The first light-emitting diode OD1 can be essentially used as the main (or primary) light-emitting diode of the sub-pixel SP, and the emission region EA in which the first light-emitting diode OD1 is formed can be used as the primary (or primary) emission region.

[0239] Furthermore, for each of the red sub-pixel SPr, the green sub-pixel SPg, and the blue sub-pixel SPb, the embankment 143 may have a second opening OP2, which is an opening that exposes the auxiliary electrode AE2 located in the contact region CA of the first electrode AE.

[0240] Therefore, a second light-emitting diode OD2, configured as having an auxiliary electrode AE2, a light-emitting layer 145, and a second electrode CAE stacked in the second opening OP2, can be formed in the contact region CA. The second light-emitting diode OD2 can essentially serve as an auxiliary light-emitting diode for the sub-pixel SP, and the contact region CA in which the second light-emitting diode OD2 is formed can serve as an auxiliary emission region.

[0241] As described above, in this embodiment, a second light-emitting diode OD2 can be additionally formed in the contact area CA to increase the light-emitting area of ​​the sub-pixel SP. This improves the emission efficiency of the light-emitting display device.

[0242] In the above embodiments, for ease of explanation, the reflectors arranged in the emission regions of the red, green, and blue sub-pixels are referred to as first to third reflectors, and the reflector arranged in the contact region of each sub-pixel is referred to as a fourth reflector. Meanwhile, in some cases, the reflector arranged in the emission region of each sub-pixel may be referred to as the first reflector, and the reflector arranged in the contact region of each sub-pixel may be referred to as the second reflector.

[0243] As described above, according to an embodiment of the present invention, a planarization pattern can be formed in the contact area of ​​the sub-pixel to flatten the uneven surface of the layer (e.g., main electrode AE1) located below and on the substrate due to the contact hole, and the stacked structure including the reflector located on the planarization pattern can be distinguished according to the sub-pixel, thereby realizing a microcavity structure having a resonant distance for emitting the colored light of the sub-pixel.

[0244] In this way, in the contact area of ​​each sub-pixel, a microcavity structure capable of emitting light with a wavelength substantially the same as that of the sub-pixel can be formed into a substantially flat shape without any unevenness.

[0245] Therefore, it is possible to prevent or reduce color mixing in the light output from the sub-pixel SP due to uneven shapes caused by contact holes, resulting in different colored light generated in the contact area compared to the emission area, thereby improving the color gamut.

[0246] The light output area of ​​a subpixel can extend into the contact area, thereby increasing the aperture ratio.

[0247] Furthermore, recessed spaces can be formed in the contact area, and microcavity structures can be positioned within these recessed spaces. In this case, the surfaces of the contact area and the emitting area can be substantially positioned on the same plane, allowing the top layer on the substrate (with the light-emitting diode formed beneath it) to have an overall flat surface.

[0248] Furthermore, light-emitting diodes can be additionally configured in the contact area to increase the emission area of ​​the sub-pixels. Therefore, the emission efficiency of the light-emitting display device can be improved.

[0249] It will be apparent to those skilled in the art that various modifications and variations can be made to the invention without departing from its spirit or scope. Therefore, this invention is intended to cover such modifications and variations as long as they fall within the scope of the appended claims and their equivalents.

Claims

1. A light-emitting display device, comprising: A substrate comprising multiple sub-pixels, each sub-pixel including an emission region and a contact region; A first reflector is disposed in the emission region on the substrate; The first electrode includes a main electrode and is stacked on the first reflective plate; A light-emitting layer is stacked on the main electrode; The second electrode is stacked on the light-emitting layer and is semi-transparent, wherein the main electrode, the light-emitting layer and the second electrode are disposed in the reflective region and the contact region; A stacked structure, located in the contact region and inserted between the main electrode and the light-emitting layer, the stacked structure comprising a planarization pattern on the main electrode and a second reflector on the planarization pattern. The microcavity structure located in the emission region, configured with the first reflector and the second electrode, produces light of the same color as the microcavity structure located in the contact region, configured with the second reflector and the second electrode.

2. The light-emitting display device according to claim 1, wherein, The plurality of sub-pixels includes red sub-pixels, green sub-pixels, and blue sub-pixels, and The stacked structure located in the contact area of ​​the red sub-pixel further includes a first insulating pattern and a second insulating pattern that are sequentially stacked on the second reflective plate.

3. The light-emitting display device according to claim 2, wherein, The stacked structure located in the contact area of ​​the green sub-pixel also includes the first insulating pattern stacked on the second reflector.

4. The light-emitting display device according to claim 3, wherein, The first electrode further includes an auxiliary electrode, which is formed on the second insulating pattern in the red sub-pixel and included in the stacked structure in the contact area of ​​the red sub-pixel, formed on the first insulating pattern in the green sub-pixel and included in the stacked structure in the contact area of ​​the green sub-pixel, and formed on the second reflector in the blue sub-pixel and included in the stacked structure in the contact area of ​​the blue sub-pixel.

5. The light-emitting display device according to claim 4, wherein, The auxiliary electrode contacts the main electrode at the boundary between the emission region and the contact region of the sub-pixel.

6. The light-emitting display device according to claim 4, wherein, The light-emitting display device also includes a dam located in the contact area. The embankment is disposed between the auxiliary electrode and the light-emitting layer, and covers the auxiliary electrode.

7. The light-emitting display device according to claim 6, wherein, The embankment covers the edge of the main electrode.

8. The light-emitting display device according to claim 1, wherein, Contact holes are provided in the contact area to electrically connect the thin-film transistor of the sub-pixel and the main electrode, and The planarization pattern flattens the uneven shape of the main electrode caused by the contact hole.

9. The light-emitting display device according to claim 1, wherein, The microcavity structure located in the contact region is formed at a higher position than the microcavity structure located in the emission region.

10. The light-emitting display device according to claim 1, wherein, The light-emitting display device further includes a passivation layer disposed below the first reflector and recessed in the contact area to define a recessed space. The stacked structure located in the contact area is accommodated in the recessed space.

11. The light-emitting display device according to claim 10, wherein, The plurality of sub-pixels includes red sub-pixels, green sub-pixels, and blue sub-pixels. Wherein, the thickness of the passivation layer in the contact region of the red sub-pixel is less than the thickness of the passivation layer in the contact region of the green sub-pixel; and Wherein, the thickness of the portion of the passivation layer located in the contact region of the green sub-pixel is less than the thickness of the portion of the passivation layer located in the contact region of the blue sub-pixel.

12. The light-emitting display device according to claim 10, wherein, The plurality of sub-pixels includes red sub-pixels, green sub-pixels, and blue sub-pixels. Wherein, the recessed space of the red sub-pixel is deeper than the recessed space of the green sub-pixel, and The recessed space of the green sub-pixel is deeper than the recessed space of the blue sub-pixel.

13. The light-emitting display device according to claim 11, wherein, The portions of the passivation layer located in the emission regions of the red sub-pixel, the green sub-pixel, and the blue sub-pixel have the same thickness.

14. The light-emitting display device according to claim 4, wherein, The light-emitting display device further includes a dam, which includes a first opening exposing the main electrode located in the emission region and a second opening exposing the auxiliary electrode located in the contact region.

15. The light-emitting display device according to claim 14, wherein, The main electrode, the light-emitting layer, and the second electrode, stacked in the first opening, form a first light-emitting diode. The auxiliary electrode, the light-emitting layer, and the second electrode, which are stacked in the second opening, form a second light-emitting diode.

16. The light-emitting display device according to claim 1, wherein, The first reflector and the second electrode are spaced apart by a resonant distance in the emission region, and the second reflector and the second electrode are spaced apart by the resonant distance in the contact region of each sub-pixel.

17. The light-emitting display device according to claim 6, wherein, The embankment is formed of a transparent insulating material that transmits light.

18. The light-emitting display device according to claim 10, wherein, The surfaces of the contact area and the emission area are positioned on the same plane.

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