Silicon carbide single crystal growth device

Abstract

The utility model relates to the technical field of silicon carbide, in particular to a silicon carbide single crystal growth device, which comprises a base, an inner furnace body is arranged in an inner cavity of the outer furnace body, the top of the inner furnace body penetrates through the top of the outer furnace body and extends to the position above the outer furnace body, the inner furnace body is rotationally connected with the top of the outer furnace body, and an annular inwards-concave sealing groove is fixedly connected to the top of an inner cavity of the inner furnace body. A plurality of resistance heating blocks are fixedly connected to the inner surface of the outer furnace body and are arranged at equal intervals, a driving cavity is formed in an inner cavity of the base, and a driving assembly is arranged in the driving cavity. In the silicon carbide single crystal furnace, the sealing performance of the silicon carbide single crystal furnace is good, and temperature loss is not prone to being caused in the using process, so that the growth efficiency of silicon carbide single crystals is guaranteed, and the service life of the silicon carbide single crystals is prolonged. And the structure is flexible, so that the silicon carbide powder is not easy to be heated unevenly, and the growth effect of the silicon carbide single crystal is ensured.

Description

Technical Field

[0001] The utility model relates to the technical field of silicon carbide, in particular to a silicon carbide single crystal growth device. Background Art

[0002] Silicon carbide is an artificially manufactured ceramic material made of SiC (silicon carbide). It is a ceramic material with high hardness, high temperature resistance and corrosion resistance. It is widely used in high-temperature furnaces, semiconductors, optical instruments, electronic components and other fields. The manufacturing cost of silicon carbide is relatively high, but it has excellent performance, so it has received widespread attention and application.

[0003] The production of silicon carbide requires a growth device. Although the traditional growth device has the ability to heat, it still has some shortcomings. For example, its own sealing performance is poor, which can easily cause temperature loss during use, thereby affecting the growth efficiency of the silicon carbide single crystal. In addition, its structure is relatively fixed, so it is easy for the silicon carbide powder to be heated unevenly, thereby affecting the growth effect of the silicon carbide single crystal. Therefore, a silicon carbide single crystal growth device is proposed to address the above problems. Utility Model Content

[0004] The purpose of the utility model is to provide a silicon carbide single crystal growth device, which has better sealing performance and is not easy to cause temperature loss during use, thereby ensuring the growth efficiency of the silicon carbide single crystal. In addition, its structure is relatively flexible, so it is not easy to cause uneven heating of silicon carbide powder, thereby ensuring the growth effect of silicon carbide single crystal, so as to solve the problems raised in the above-mentioned background technology.

[0005] In order to achieve the above purpose, the utility model provides the following technical solutions:

[0006] A silicon carbide single crystal growth device comprises a base, wherein the four corners of the bottom of the base are fixedly connected with supporting feet, the top of the base is fixedly connected with an outer furnace body, the inner cavity of the outer furnace body is provided with an inner furnace body, the top of the inner furnace body passes through the top of the outer furnace body and extends to the top of the outer furnace body, and the inner furnace body is rotatably connected to the top of the outer furnace body, an annular concave sealing groove is fixedly connected to the top of the inner cavity of the inner furnace body, a furnace cover matching the specifications of the outer furnace body is provided above the inner furnace body, a plurality of resistance heating blocks are fixedly connected and arranged at equal intervals on the inner surface of the outer furnace body, the inner cavity of the base is provided with a driving cavity, and a driving assembly is provided in the driving cavity.

[0007] Preferably, a ring-shaped outwardly convex rubber sealing block is fixedly connected to the bottom of the furnace cover, and the rubber sealing block and the sealing groove are arranged to correspond in position and have matching specifications.

[0008] Preferably, both sides of the top of the inner furnace body and both sides of the furnace cover are penetrated by fixing grooves, the inner wall of the fixing groove is provided with an internal thread, the internal thread of the fixing groove is connected with a fixing bolt, and the inner furnace body and the furnace cover are threadedly connected through the fixing bolt.

[0009] Preferably, the drive assembly includes a low-speed motor fixedly connected to one side of the bottom wall of the drive cavity, a first transmission shaft is fixedly connected to the output end of the low-speed motor, a first bevel gear is fixedly connected to the first transmission shaft, and a second bevel gear is meshingly connected to the first bevel gear.

[0010] Preferably, a second transmission shaft is fixedly connected to the second bevel gear, one end of the second transmission shaft is rotatably connected to the inner bottom wall of the driving cavity, and the other end passes through the top wall of the base and the bottom wall of the outer furnace body and is fixedly connected to the center of the bottom wall of the inner furnace body.

[0011] Compared with the prior art, the beneficial effects of the utility model are:

[0012] In the utility model, silicon carbide powder can be placed by the inner furnace body, and the inner furnace body can be sealed and protected by the furnace cover. The sealing groove and rubber sealing block can provide good sealing between the inner furnace body and the furnace cover to prevent temperature loss during use, thereby ensuring the growth efficiency of the silicon carbide single crystal. The fixing groove and fixing bolts can provide good connection stability between the inner furnace body and the furnace cover. The resistance heating block can generate heat and heat the inner furnace body and the silicon carbide powder therein, thereby preparing the growth of the silicon carbide single crystal. The driving assembly can drive the inner furnace body to rotate at a uniform speed, so it is not easy for the silicon carbide powder to be heated unevenly, thereby ensuring the growth effect of the silicon carbide single crystal. BRIEF DESCRIPTION OF THE DRAWINGS

[0013] Figure 1 It is the front view of the utility model;

[0014] Figure 2 It is a structural schematic diagram of the utility model;

[0015] Figure 3 For the utility model Figure 2 Enlarged view of point A.

[0016] In the figure: 1. base; 2. outer furnace body; 3. inner furnace body; 4. sealing groove; 5. furnace cover; 6. rubber sealing block; 7. fixing groove; 8. fixing bolt; 9. resistance heating block; 10. driving cavity; 11. low-speed motor; 12. first transmission shaft; 13. first bevel gear; 14. second bevel gear; 15. second transmission shaft. DETAILED DESCRIPTION

[0017] The following will be combined with the drawings in the embodiments of the utility model to clearly and completely describe the technical solutions in the embodiments of the utility model. Obviously, the described embodiments are only part of the embodiments of the utility model, not all of the embodiments. Based on the embodiments in the utility model, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the utility model.

[0018] In the description of the present invention, it is necessary to understand that the directions or positional relationships indicated by directional words such as "front, back, up, down, left, right", "lateral, vertical, perpendicular, horizontal" and "top, bottom" are usually based on the directions or positional relationships shown in the drawings. They are only for the convenience of describing the present invention and simplifying the description. Unless otherwise specified, these directional words do not indicate or imply that the devices or elements referred to must have a specific direction or be constructed and operated in a specific direction. Therefore, they cannot be understood as limiting the scope of protection of the present invention. The directional words "inside and outside" refer to the inside and outside relative to the contours of each component itself.

[0019] In addition, it should be noted that the use of terms such as "first" and "second" to limit components is only for the convenience of distinguishing the corresponding components. If not otherwise stated, the above terms have no special meaning and therefore cannot be understood as limiting the scope of protection of the present invention.

[0020] See also Figure 1-3 , the utility model provides a technical solution:

[0021] A silicon carbide single crystal growth device comprises a base 1, wherein the four corners of the bottom of the base 1 are fixedly connected with supporting feet, the top of the base 1 is fixedly connected with an outer furnace body 2, the inner cavity of the outer furnace body 2 is provided with an inner furnace body 3, the top of the inner furnace body 3 passes through the top of the outer furnace body 2 and extends to the top of the outer furnace body 2, and the inner furnace body 3 is rotatably connected to the top of the outer furnace body 2, an annular concave sealing groove 4 is fixedly connected to the top of the inner cavity of the inner furnace body 3, a furnace cover 5 matching the specifications of the outer furnace body 2 is provided above the inner furnace body 3, a plurality of resistance heating blocks 9 are fixedly connected and arranged at equal intervals on the inner surface of the outer furnace body 2, the inner cavity of the base 1 is provided with a driving cavity 10, and a driving component is provided in the driving cavity 10.

[0022] The bottom of the furnace cover 5 is fixedly connected with a ring-shaped outwardly convex rubber sealing block 6, and the rubber sealing block 6 and the sealing groove 4 are arranged in corresponding positions and matching specifications. Both sides of the top of the inner furnace body 3 and both sides of the furnace cover 5 are penetrated with fixing grooves 7, and the inner wall of the fixing groove 7 is provided with an internal thread. The internal thread of the fixing groove 7 is connected with a fixing bolt 8, and the inner furnace body 3 and the furnace cover 5 are threadedly connected by the fixing bolt 8. The furnace cover 5 can seal and protect the inner furnace body 3. The sealing groove 4 and the rubber sealing block 6 can provide good sealing between the inner furnace body 3 and the furnace cover 5 to prevent temperature loss during use, thereby ensuring the growth efficiency of the silicon carbide single crystal. The fixing groove 7 and the fixing bolt 8 can provide good connection stability between the inner furnace body 3 and the furnace cover 5 The driving assembly includes a low-speed motor 11 fixedly connected to one side of the inner bottom wall of the driving chamber 10, a first transmission shaft 12 is fixedly connected to the output end of the low-speed motor 11, a first bevel gear 13 is fixedly connected to the first transmission shaft 12, a second bevel gear 14 is meshingly connected to the first bevel gear 13, a second bevel gear 15 is fixedly connected to the second bevel gear 14, one end of the second transmission shaft 15 is rotatably connected to the inner bottom wall of the driving chamber 10, and the other end passes through the top wall of the base 1 and the bottom wall of the outer furnace body 2 and is fixedly connected to the center of the bottom wall of the inner furnace body 3. The driving assembly can drive the inner furnace body 3 to rotate at a uniform speed, so it is not easy to cause uneven heating of the silicon carbide powder, thereby ensuring the growth effect of the silicon carbide single crystal.

[0023] Working process: firstly, put silicon carbide powder into the inner furnace body 3, and put the furnace cover 5 on the inner furnace body 3. By pressing the rubber sealing block 6 of the furnace cover 5 down into the sealing groove 4, the inner furnace body 3 is sealed to prevent the temperature loss during use, thereby ensuring the growth efficiency of the silicon carbide single crystal. By screwing the fixing bolt 8 into the fixing groove 7, a good connection stability can be provided between the inner furnace body 3 and the furnace cover 5. Then, the resistance heating block 9 is started to heat up. The heat of the resistance heating block 9 will heat the inner furnace body 3. The silicon carbide powder in the inner furnace body 3 is heated, so as to prepare the growth of the silicon carbide single crystal. At the same time, the low-speed motor 11 is started, and the low-speed motor 11 drives the first transmission shaft 12 and the first bevel gear 13 thereon to rotate. The first bevel gear 13 drives the second bevel gear 14 and the second transmission shaft 15 to rotate. The inner furnace body 3 is driven by the second transmission shaft 15 to rotate at a uniform speed in the outer furnace body 2. Therefore, it is not easy to cause the silicon carbide powder to be heated unevenly, thereby ensuring the growth effect of the silicon carbide single crystal.

[0024] The contents not described in detail in this specification belong to the prior art known to the professional and technical personnel in this field. The standard parts used in this utility model can be purchased from the market, and the special-shaped parts can be customized according to the description and the drawings. The specific connection methods of each part adopt the conventional means such as bolts, rivets, welding, etc. in the prior art. The machinery, parts and equipment all adopt the conventional models in the prior art, and the circuit connection adopts the conventional connection method in the prior art, which will not be described in detail here.

[0025] Although embodiments of the present invention have been shown and described, it will be appreciated by those skilled in the art that various changes, modifications, substitutions and variations may be made to the embodiments without departing from the principles and spirit of the present invention, and that the scope of the present invention is defined by the appended claims and their equivalents.

Claims

1. A silicon carbide single crystal growth device, comprising a base (1), characterized in that: The four corners of the bottom of the base (1) are fixedly connected with supporting feet, the top of the base (1) is fixedly connected with an outer furnace body (2), the inner cavity of the outer furnace body (2) is provided with an inner furnace body (3), and the top of the inner furnace body (3) passes through the top of the outer furnace body (2) and extends to the top of the outer furnace body (2), and the inner furnace body (3) is rotatably connected to the top of the outer furnace body (2), the top of the inner cavity of the inner furnace body (3) is fixedly connected with an annular concave sealing groove (4), the top of the inner furnace body (3) is provided with a furnace cover (5) matching the specifications of the outer furnace body (2), the inner surface of the outer furnace body (2) is fixedly connected and a plurality of resistance heating blocks (9) are arranged at equal intervals, and the inner cavity of the base (1) is provided with a driving cavity (10), and a driving component is provided in the driving cavity (10).

2. The silicon carbide single crystal growth device according to claim 1, characterized in that: The bottom of the furnace cover (5) is fixedly connected with a ring-shaped outwardly protruding rubber sealing block (6), and the rubber sealing block (6) and the sealing groove (4) are arranged in a corresponding position and with matching specifications.

3. The silicon carbide single crystal growth device according to claim 1, characterized in that: Both sides of the top of the inner furnace body (3) and both sides of the furnace cover (5) are penetrated by fixing grooves (7), the inner wall of the fixing groove (7) is provided with an internal thread, the internal thread of the fixing groove (7) is connected with a fixing bolt (8), and the inner furnace body (3) and the furnace cover (5) are threadedly connected via the fixing bolt (8).

4. The silicon carbide single crystal growth device according to claim 1, characterized in that: The drive assembly comprises a low-speed motor (11) fixedly connected to one side of the bottom wall of the drive chamber (10); a first transmission shaft (12) is fixedly connected to the output end of the low-speed motor (11); a first bevel gear (13) is fixedly connected to the first transmission shaft (12); and a second bevel gear (14) is meshingly connected to the first bevel gear (13).

5. The silicon carbide single crystal growth device according to claim 4, characterized in that: A second transmission shaft (15) is fixedly connected to the second bevel gear (14), one end of the second transmission shaft (15) is rotatably connected to the inner bottom wall of the driving chamber (10), and the other end passes through the top wall of the base (1) and the bottom wall of the outer furnace body (2), and is fixedly connected to the center of the bottom wall of the inner furnace body (3).

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